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LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

smd transistor 662

Catalog Datasheet MFG & Type PDF Document Tags

smd transistor 662

Abstract: Technical Explanations power transistor Transistor Configurations. 25 Explanations , . 30 RF and AF Transistors and Diodes in SMD Packages . 31 Temperature , : Microwave class="hl">662 HiRef Discretes and Microwave
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4E smd diode

Abstract: smd schottky diode A2 SOD-123 2004 SMD Databook The following pages outline the latest additions to this edition of the surface , -6F - Full Wave Bridge Rectifier See page 200 Low Noise/High Voltage PNP Transistor - SOT-23 The CMPT992 is a 120V low noise PNP transistor designed for applications requiring both low noise and a high Vq ^ q . CMPT992 - Low Noise PNP Transistor See page 378 1.0 Amp, 40 Volt , space than the standard DPAK rectifier. CZSH10-40CN - 10A Schottky Rectifier See page 662
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4E smd diode smd schottky diode A2 SOD-123 Zener diode quad surface mount composition of material used in zener diode Schottky Diode SOT-89 smd transistor 662 x CMLD4448 CMLD4448DO CMLD6001 CMLD6263 CMLD6263A CMLD6263C

smd transistor 662

Abstract: smd transistor 662 x VDE 0884 approved in 3 available lead forms : - STD - G form - SMD approved to CECC 00802 TIL114X , diode and NPN silicon photo transistor in a standard 6 pin dual in line plastic package. FEATURES l , 3 7.0 6.0 4 1.2 7.62 6.62 7.62 4.0 3.0 13° Max 0.5 3.0 0.5 3.35 0.26 , OUTPUT TRANSISTOR Collector-emitter Voltage BVCEO Collector-base Voltage BVCBO Emitter-collector , Breakdown (BVECO) Collector-emitter Dark Current (ICEO) Collector-base Dark Current (ICBO) Transistor
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TIL111X TIL116X TIL117X TIL111 TIL114 TIL116 smd transistor 662 TIL117 transistor 335 smd

TIL116

Abstract: TIL111 VDE 0884 approved in 3 available lead forms : - STD - G form - SMD approved to CECC 00802 TIL114X , diode and NPN silicon photo transistor in a standard 6 pin dual in line plastic package. FEATURES l , 3 7.0 6.0 4 1.2 7.62 6.62 7.62 4.0 3.0 13° Max 0.5 3.0 0.5 3.35 0.26 , OUTPUT TRANSISTOR Collector-emitter Voltage BVCEO Collector-base Voltage BVCBO Emitter-collector , ) Collector-base Dark Current (ICBO) Transistor Static Gain ( hFE ) 1.4 TEST CONDITION V V V nA nA
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E91231 EN60950 P96101299 DB92125

4N30F

Abstract: 4N33F 4N29F, 4N30F, 4N31F, 4N32F,4N33F NON BASE LEAD OPTICALLY COUPLED ISOLATOR PHOTODARLINGTON OUTPUT APPROVALS UL recognised, File No. E91231 - STD - G form - SMD approved to CECC 00802 DESCRIPTION The 4N29F,4N30F,4N31F,4N32F,4N33F series of optically coupled isolators consist of an infrared , forms : - 1 2 6 5 3 7.0 6.0 4 1.2 7.62 6.62 7.62 4.0 3.0 13° Max 0.5 , 50mA 6V 70mW OUTPUT TRANSISTOR Collector-emitter Voltage BVCEO Emitter-collector Voltage BVECO
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6053s ic smd code sm 4N32 4N33 DC93055

diode SMD CODE sm 17

Abstract: E91231 'X' SPECIFICATIONAPPROVALS VDE 0884 in 3 available lead form : - STD - G form - SMD approved to CECC 00802 Dimensions in mm 2.54 4 1.2 7.62 6.62 7.62 4.0 3.0 13° Max 0.5 3.0 , 6V 70mW OUTPUT TRANSISTOR Collector-emitter Voltage BVCEO Emitter-collector Voltage BVECO
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MOC8030 MOC8050 MOC8030X MOC8050X diode SMD CODE sm 17 diode 6pin SMT DB92113

E91231

Abstract: TIL119 TIL119 TIL119X NON BASE LEAD OPTICALLY COUPLED ISOLATOR PHOTODARLINGTON OUTPUT APPROVALS UL recognised, File No. E91231 Package Code " SS " 'X' SPECIFICATIONAPPROVALS VDE 0884 in 3 available lead form : - STD - G form - SMD approved to CECC 00802 DESCRIPTION The TIL119 is an optically , SURFACE MOUNT Dimensions in mm 2.54 1 6 2 3 7.0 6.0 5 4 1.2 7.62 6.62 7.62 , Power Dissipation 50mA 6V 70mW OUTPUT TRANSISTOR Collector-emitter Voltage BVCEO
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DB92287

E91231

Abstract: MOC8100 7.0 6.0 'X' SPECIFICATION APPROVALS l Dimensions in mm 2.54 4 1.2 - SMD approved to CECC 00802 BSI approved - Certificate No. 8001 7.62 6.62 7.62 4.0 3.0 13° Max 0.5 , silicon photo transistor in a standard 6 pin dual in line plastic package. FEATURES l Options :10mm , Power Dissipation 60mA 6V 105mW OUTPUT TRANSISTOR Collector-emitter Voltage BVCEO
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MOC8100 MOC8100X MOC8100 applications DB92198
Abstract: IS201-63 IS201X63 OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT APPROVALS l UL recognised, File No. E91231 'X' SPECIFICATION APPROVALS l VDE 0884 in 3 available lead forms : - STD - G form - SMD , and a NPN silicon photo transistor in a standard 6 pin dual in line plastic package. FEATURES l , potentials and impedances OPTION SM SURFACE MOUNT OPTION G 2.54 7.0 6.0 1.2 7.62 6.62 Dimensions in , Reverse Voltage Power Dissipation OUTPUT TRANSISTOR Collector-emitter Voltage BVCEO Collector-base Voltage ISOCOM Components
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DB92521-AAS/A1

CNY17F-2

Abstract: CNY17F-2X Code GG 'X' SPECIFICATION APPROVALS VDE 0884 in 3 available lead forms : - STD - G form - SMD approved to CECC 00802 Dimensions in mm 2.54 1 2 6 5 3 7.0 6.0 4 1.2 7.62 6.62 , infrared light emitting diode and NPN silicon photo transistor in a standard 6 pin dual in line plastic , 6V 105mW OUTPUT TRANSISTOR Collector-emitter Voltage BVCEO Emitter-collector Voltage BVECO
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CNY17F-1X CNY17F-2X CNY17F-3X CNY17F-4X CNY17F-1 CNY17F-2 CNY17F-3 CNY17F-4

CNY75A

Abstract: 3 A SMD TRANSISTOR form - SMD approved to CECC 00802 Certified to EN60950 by the following Test Bodies :Nemko - , transistor in a standard 6 pin dual in line plastic package. 7.0 6.0 FEATURES Options :10mm lead , 6.62 l l 1 2 3 'X' SPECIFICATION APPROVALS l Dimensions in mm 2.54 7.62 4.0 , Power Dissipation 60mA 6V 105mW OUTPUT TRANSISTOR Collector-emitter Voltage BVCEO
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CNY75AX CNY75BX CNY75CX CNY75A CNY75B CNY75C 3 A SMD TRANSISTOR

smd diode SM 97

Abstract: 4N25 available lead forms : l - STD - G form - SMD approved to CECC 00802 l Certified to EN60950 by the , 7.0 6.0 4 1.2 7.62 6.62 7.62 4.0 3.0 13° Max 0.5 3.0 0.5 3.35 0.26 , emitting diode and NPN silicon photo transistor in a standard 6 pin dual in line plastic package , Current Reverse Voltage Power Dissipation 60mA 6V 105mW OUTPUT TRANSISTOR Collector-emitter
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4N25X 4N26X 4N27X 4N28X smd diode SM 97 4N25 4N26 4N27 DB91028-AAS/A1

transistor 1YD

Abstract: MOC8100 7.0 6.0 'X' SPECIFICATION APPROVALS l Dimensions in mm 2.54 4 1.2 - SMD approved to CECC 00802 BSI approved - Certificate No. 8001 7.62 6.62 7.62 4.0 3.0 13° Max 0.5 , silicon photo transistor in a standard 6 pin dual in line plastic package. FEATURES l Options :10mm , Power Dissipation 60mA 6V 105mW OUTPUT TRANSISTOR Collector-emitter Voltage BVCEO
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transistor 1YD transistor SMD g 28

E91231

Abstract: H11AV l l l 2.54 - SMD approved to CECC 00802 Certified to EN60950 by the following Test , transistor in a standard 6 pin dual in line plastic package. FEATURES l Options :10mm lead spread - add G , available lead form : - STD - G form 4 1.2 7.62 6.62 7.62 4.0 3.0 13° Max 0.5 3.0 0.5 , 6V 105mW OUTPUT TRANSISTOR Collector-emitter Voltage BVCEO Collector-base Voltage BVCBO
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H11AV1X H11AV2X H11AV3X H11AV1 H11AV2 H11AV3 H11AV

SMD TRANSISTOR A4 S

Abstract: smd transistor a4 available lead form : - STD - G form - SMD approved to CECC 00802 l Certified to EN60950 by the , emitting diode and NPN silicon photo transistor in a standard 6 pin dual in line plastic package , 2 6 5 3 7.0 6.0 4 1.2 7.62 6.62 7.62 4.0 3.0 13° Max 0.5 3.0 0.5 , 6V 105mW OUTPUT TRANSISTOR Collector-emitter Voltage BVCEO Collector-base Voltage BVCBO
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FI18166 SMD TRANSISTOR A4 S smd transistor a4 4N28 P01102464 DB91028

isocom 4N35

Abstract: : - STD - G form - SMD approved to CECC 00802 l BSI approved - Certificate No. 8001 DESCRIPTION The , silicon photo transistor in a standard 6 pin dual in line plastic package. FEATURES Options :10mm lead , electrical parameters 100% tested l Custom electrical selections available l 2.54 7.0 6.0 1.2 7.62 6.62 , Reverse Voltage Power Dissipation OUTPUT TRANSISTOR Collector-emitter Voltage BVCEO Collector-base Voltage
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isocom 4N35 4N35X 4N36X 4N37X DB90046

isolator IC 4N35

Abstract: 4N35X, 4N36X, 4N37X, 4N35, 4N36, 4N37, OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT APPROVALS l UL recognised, File No. E91231 Package System " GG " 'X' SPECIFICATION APPROVALS l VDE 0884 in 3 available lead forms : - STD - G form - SMD approved to CECC 00802 l 2.54 7.0 6.0 1.2 7.62 6.62 4.0 3.0 , transistor in a standard 6 pin dual in line plastic package. FEATURES l Options :10mm lead spread - add G , TRANSISTOR Collector-emitter Voltage BVCEO Collector-base Voltage BVCBO Emitter-collector Voltage BVECO
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isolator IC 4N35

CNY17F-3

Abstract: CNY17F-1 SPECIFICATION APPROVALS l VDE 0884 in 3 available lead forms : - STD - G form - SMD approved to CECC 00802 , mm 2.54 1 2 6 5 3 7.0 6.0 4 1.2 7.62 6.62 7.62 4.0 3.0 13° Max 0.5 , optically coupled isolators consist of infrared light emitting diode and NPN silicon photo transistor in a , Power Dissipation 60mA 6V 105mW OUTPUT TRANSISTOR Collector-emitter Voltage BVCEO
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Isocom Components DB92179

CQY80

Abstract: CQY80N lead forms : - STD - G form - SMD approved to CECC 00802 l FEATURES l Options :10mm lead spread , 3 7.0 6.0 4 1.2 7.62 6.62 CQY80NX - VDE 0884 pending CQY80X is certified to EN60950 , NPN silicon photo transistor in a standard 6 pin dual in line plastic package. Dimensions in mm , Current Reverse Voltage Power Dissipation 60mA 6V 105mW OUTPUT TRANSISTOR Collector-emitter
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CQY80 CQY80N DB90035

SMD TRANSISTOR A4 S

Abstract: a4 smd transistor 3 7.0 6.0 VDE 0884 in 3 available lead form : - STD - G form - SMD approved to CECC 00802 Dimensions in mm 2.54 4 1.2 7.62 6.62 7.62 4.0 3.0 13° Max 0.5 3.0 0.5 3.35 0.26 , of infrared light emitting diode and NPN silicon photo transistor in a standard 6 pin dual in line , °C INPUT DIODE Forward Current Reverse Voltage Power Dissipation 60mA 6V 105mW OUTPUT TRANSISTOR
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MOC8101X MOC8102X MOC8103X MOC8104X MOC8105X MOC8101 a4 smd transistor MOC8102
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