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Part Manufacturer Description Datasheet BUY
TPD4E004DSFR Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD3E001DRY Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD2E001YFPR Texas Instruments DIODE UNIDIRECTIONAL, SILICON, TVS DIODE, LEAD FREE, DSBGA-4, Transient Suppressor visit Texas Instruments
UC1610J/883B Texas Instruments SILICON, BRIDGE RECTIFIER DIODE visit Texas Instruments
UC3612J Texas Instruments SILICON, RECTIFIER DIODE visit Texas Instruments
UC1611J/883B Texas Instruments SILICON, RECTIFIER DIODE visit Texas Instruments

smd diode nl

Catalog Datasheet MFG & Type PDF Document Tags

B80 c1500 bridge rectifier

Abstract: c1500 rectifier ZENER DIODE SELECTOR GUIDE & CRO SS REFERENCE 48 GENERAL INSTRUMENT GE NL IN S T R / POIdER , recognized under component index, file number E54214 RECTIFIER AND ZENER DIODE SELECTOR GUIDE & CROSS , *: Controlled Avalanche Device RECTIFIER ANO ZENER DIODE SELECTOR GUIDE & CRO SS REFERENCE 27 GENERAL , Formed Devices Standard Horizontal Ammo Pack (Metric) GL41 SMD 12MM Tape, 7" Diameter Reel GL41 SMD 12MM Tape, 13" Diameter Reel Standard Horizontal Reel, Class III, 14" Diameter, (Metric 73MM) GL34 SMD, 8MM
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0F04M RW005M B80 c1500 bridge rectifier c1500 rectifier B80 c1500 rectifier B80 smd diode 206 3N257 Bridge Rectifier C800 1D137 DD03333 C800DM DF005M DF01M DF02M

P47Aj

Abstract: 74hc14m LED green SMD 0603 Diode Schottky barrier SMD CRS01 Diode Schottky barrier SMD CRS01 Connector-PCB , Information . 15 Schottky Diode , value MLCC or 1 F tantalum capacitors may also be used. SCHOTTKY DIODE The Schottky diodes limit , OUTR- _I NL + D N PLA E C19 1000PF M OUTR+_I NL - I NR+ I NR- LOUT+ P3 RED , F BYPASS CAP FOR U 4 8 TEST0/ PW I NL M + 7 TEST1/ PW I NL M - 6 OUTL+ 5 OUTL
Analog Devices
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MM74HC14M-ND P47Aj 74hc14m adav4201 EB-ADAU15XX CRS01CT-ND EVAL-ADAU1513/ADAU1590/ADAU1592 ADAU1513 ADAU1590 ADAU1592 LM317 74HC14

bridge B250 C5000

Abstract: KBU diode bridge ry ve rsio n RECTIFIER ANO ZEN ER DIODE SELECTOR GUIDE & CROSS R EFERENC E 28 GENERAL , s t re c o v e ry v e rs io n RECTIFIER ANO ZEN ER DIODE SELEC TO R GUIDE & CROSS REFERENC E 29 , Special Axial-Leaded Formed Devices Standard Horizontal Ammo Pack (Metric) GL41 SMD 12MM Tape, 7" Diameter Reel GL41 SMD 12MM Tape, 13" Diameter Reel Standard Horizontal Reel, Class III, 14" Diameter, (Metric 73MM) GL34 SMD, 8MM Tape, 7" Diameter Reel GL34 SMD, 8MM Tape, 13" Diameter Reel Tab Mounted EFR8 Chip
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DD0333S bridge B250 C5000 KBU diode bridge B 80 C3700 - 2200 RKBU4B gp20 diode diode G1 kbu8k PC6005 RKBPC600 C5000/3300 RKBPC601 C3700

TEKELEC* diode

Abstract: mount (SMD) and (on request) non-magnetic. The controlling element of a PIN diode is its Intrinsic (l) layer. The diode itself is a sandwich, i.e. a high resistivity l layer between highly doped layers of P and N materials. With negative bias on the l layer, the PIN diode exhibits very high parallel , 's high-voltage PIN diode products are designed for very high reliability, high power handling capabilities, high , modules are available for frequencies in the 1 MHz to 1 GHz range. All high-voltage PIN diode products can
Tekelec Temex Components
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TEKELEC* diode

D3FJ10

Abstract: smd marking Yd Single Diode Schottky Barrier Diode D3FJ10 mtmm outline 100V 3A â'¢/JvSUSMD â'¢ Tj , » Small SMD 1 Tj=150°C 1 Low lR=0.4mA 1 Resistance for thermal run-away Main Use 1 Switching Regulator , oo (Nl L J \ u u h Xlt , ) www.shindengen.co.jp/product/semi/ Small SMD Single SBD D3FJ10 M#tt0 CHARACTERISTIC DIAGRAMS JB7Ï[p]fttt Forward
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smd marking Yd J532 CJ532 IXX11 T/-10

131-G W J 60

Abstract: smd Marking OU Single Diode Schottky Barrier Diode M2FM3 30V 6A â'¢ ¿JiiySMD â'¢ ISVf=0.46V â'¢ ElR=0.2mA Feature â'¢ Small SMD â'¢ Low Vf=0,46V â'¢ Low ln-0.2mA Main Use â'¢ iKyyU â'"â'¢ Reverse connect protection for DC power source â'¢ DC/DC â¡ y) Kâ'"9 â'¢ DC/DC Converter â'¢ftfMEiJfSo:^ â'¢ Mobile phone , ambient. On glass-epoxy substrate MAX 55 36 (J53Z-1) www.shindengen.co.jp/producthemi/ Small SMD , Curve Tc-lo mmmm Transient Thermal Impedance ? s> w S I ! E 1 I ttt S w 0-nl m4 io3 io2 io1 id
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131-G W J 60 smd Marking OU smd marking m4 diode smd k9 DIODE mark k9 M2FM3 J532-1

FAN5331SX

Abstract: 72aa SOT23 Protection, Shutdown Mode and Soft Start Small 5-lead SOT23 Package Figure 1: FAN5331SX/32ASX_NL , the load. The inductor-Schottky diode combination and two typically valued resistors are also , results in damaging the Schottky diode and/or the IC) (Note: The Schottky diode D1, rectifies the , %, SMD IC System Regulator, SOT23-5, FSID: FAN5331SX Capacitor 120pF, 10%, 50V, COG, 0805 Resistor 13.4 Kohm, 1%, 0805 1 L1 Resistor 150 Kohm, 1%, 0805 Capacitor 4.7uF, 10%, 1206 Diode Schottky
Fairchild Semiconductor
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FAN5331 FAN5332A BAT54 ELL6GM100M SD414-100 ECJ3YB1C475K 72aa SOT23 smd diode BAT54 sot23 current regulator diode 1206 diode FAN5331/5332 FAN5332 S1011-36-ND

DH80052

Abstract: SILICON PIN DIODES Square ceramic surface mountable PIN diodes SQUARE CERAMIC SURFACE MOUNTABLE PIN DIODES Description These PIN diodes are manufactured in a square package (SMD) for surface , 0.27 0.22 1.1 1.5 2.0 2.5 3.0 3.5 3.0 3.5 4.0 4.0 4.5 4.5 1.2 1.2 1.2 1.5 1.5 1.5 Diode brazed on infinite copper heat sink Diode brazed on epoxy circuit (PCB) - XX digits for package - 06 = , 00 NL: +31 (0) 79 3461430 UK: (44) 1256 883340 1-12 AMERICA: +1 (602) 780 1995 BELGIUM: +32 (0) 2
Tekelec Temex Components
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DH80052 DH80050-XX DH80051-XX DH80052-XX DH80053-XX DH80054-XX DH80055-XX

GE-253

Abstract: SCHOTTKY BARRIER DIODE °[SQUARE - PAK| TO-263AB (SMD) Packaged in 24nun Tape and Reel : C10T»»QL oTabless T0-220:C10T*»QL-11A °Dual Diodes- Cathode Common ° Low Forward Voltage Drop ° High Surge Capability ° 20 Volts thru 100 Volts Types Available 11 A / 20 - 30 V 9.8Î.386) C10T02QL C10T02QL , {.093) 4.iJ , =25°Cper diode leg Max. 0.47 5.0 3.0 Unit V mA °C/W VRM = VRRM Tj = 25°C per diode leg Junction to Case
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GE-253 C10T02QL-11A C10T03QL C10T03QL-11A 0T03QL
Abstract: /33401BXA 2) SMD: N/A 3)883: 54F64/BXAJC X = CASE OUTLINE AS FOLLOWS: PACKAGE: CERDIP: C CERFLAT: D LCC: 2 , Logical " 1" Input Current Logical "0" Input Current Diode Current Output Short Circuit Current Power , c c = 5 5 V, V|HH = 7-0 V, other inputs = 0 V. VCC = 5.5 V, V|NL = 0.5 V, V|N = 5.5 V. V c c = 4-5 V , V|H V|L VCC = 4.5 V. VCC = 4-5 V. per Truth Table with V c c = 5-0 V, V|NL = 0 5 V, and V| n h -
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MIL-M-38510/33401 JM38510/33401BXA 54F64

2kW flyback PFC

Abstract: transistor SMD DK -RN Email: ronald.hoeijenbos@p1.zom1. siemens.scn.400net.nl DK Siemens A/S Borupvang 3 DK , ) (+49) 511-877 27 06 Fax (+49) 511- 877 15 20 NL Siemens Electronic Components Benelux Postbus 16068 NL-2500 BB Den Haag (+31) 70-333 24 29 Fax (+31) 70-333 28 15 Siemens Components , entire power section using SMD technology with up to 2kW output power and above. thickness.There is , carrying capability, but also the advantage of an intrinsic reverse diode. If a circuit is liable to
Siemens
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N60S5 BUP314 2kW flyback PFC transistor SMD DK -RN SMPS flyback 2kW UPS SIEMENS UMAX 450W SMPS smps 450W D-90439 D-70499 D-81679 B-1060 DK-2750 3800-P

TXS0924M

Abstract: IRF 9830 capacitance SMD diode SM Led Digikey Digikey Philips BB215 Chip inductor 1008 ±10% Chip , Variable capacitance SMD diode SM Led Digikey Digikey Philips BB215 Chip inductor 1008 ±10% , 18k 18k R25 22k 0 0 0 C30 330pF NL NL NL C31 3.3nF 10nF , 100pF NL NL NL NL = Not Loaded Table 3 summarizes the components change for the SA7025 , 18R R15 18R C31 3.9nF (10nF) R23 10k (13k) C26 150nF LED D1 C30 NL R26 NL
Philips Semiconductors
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MKS1851-6-0-202 TXS0924M IRF 9830 2-pins connector mch315c104kp TXS0924 TXS09 AN1890 SA8025A SA8025 IS-54 AN1891 MCR18JW000E

STR 6750

Abstract: 11N60 BAV99 SOT-23 SMD (6862.5 2637.5) R0 D82 1N5408 DO201-15 DIODE (4531.25 4625 , , TDA16888, SiC Schottky diode, small signal N- & Pchannel MOSFETs. Contains 1 2 3 4 Features , - Silicon Carbide (SiC) Schottky diode as PFC diode - OptiMOS as synchronous rectification switches , semiconductors used are two CoolMOS SPB11N60C2 in parallel and a silicon carbide diode prototype SDB06S60 (6A , SMPS. It carries the power semiconductors (in SMD lead frame technology) and the passive devices of
Infineon Technologies
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STR 6750 11N60 TRANSISTOR SMD QP DK QP transistor SMD R1D ic 3525 pwm application dc to dc converter 6 PIN SMD IC FOR SMPS MOS-06 PL-03-821 RUS-125 S-164

SMD MOSFET DRIVE 4450 8 PIN

Abstract: A7 SMD TRANSISTOR BAV99 SOT-23 SMD (6862.5 2637.5) R0 D82 1N5408 DO201-15 DIODE (4531.25 4625 , diode thinQ!, small signal N- & Pchannel MOSFETs. Contains 1 2 3 4 Features / Parameters , - Silicon Carbide (SiC) Schottky diode thinQ! as PFC diode - OptiMOS as synchronous rectification , semiconductors used are two CoolMOS SPB11N60C2 in parallel and a silicon carbide diode prototype SDB06S60 (6A , SMPS. It carries the power semiconductors (in SMD lead frame technology) and the passive devices of
Infineon Technologies
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SMD MOSFET DRIVE 4450 8 PIN A7 SMD TRANSISTOR str 6750 smps power supply circuit transistor SMD DK SMD a7 Transistor transistor SMD DK rc

d137 smd diode

Abstract: rg3j 005 Shaded Area Indicates Superectifier RECTIFIER ANO ZENER DIODE SELECTOR GUIDE & CROSS REFERENCE 14 , Indicates Superectifier RECTIFIER AND ZENER DIODE SELECTOR GUIDE & CROSS REFERENCE 15 GENERAL , Axial-Leaded Formed Devices Standard Horizontal Ammo Pack (Metric) GL41 SMD 12MM Tape, 7" Diameter Reel GL41 SMD 12MM Tape, 13" Diameter Reel Standard Horizontal Reel, Class III, 14" Diameter, (Metric 73MM) GL34 SMD, 8MM Tape, 7" Diameter Reel GL34 SMD, 8MM Tape, 13" Diameter Reel Tab Mounted EFR8 Chip, 16MM, 13
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1N5189 SRP300K d137 smd diode rg3j 005 BYW36 v zener diode cross reference SMD zener diode 203 D0204AP 00201AP RGP15J RGP15K RGP15M BYV95C

diode BY127 specifications

Abstract: GE diode 1N5061 BYX10GP series Shaded Area Indicates Superectifier RECTIFIER ANO ZE N E R DIODE SELEC TO R GUIDE » , Avalanche Device f | § : Shaded Area Indicates Superectifier If = 1.75A RECTIFIER AND ZENER DIODE , Standard Horizontal Ammo Pack (Metric) GL41 SMD 12MM Tape, 7" Diameter Reel GL41 SMD 12MM Tape, 13" Diameter Reel Standard Horizontal Reel, Class III, 14" Diameter, (Metric 73MM) GL34 SMD, 8MM Tape, 7" Diameter Reel GL34 SMD, 8MM Tape, 13" Diameter Reel Tab Mounted EFR8 Chip, 16MM, 13" Diameter Reel Bulk
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1N4245 BYW27-40Q diode BY127 specifications GE diode 1N5061 diode by127 diode cross reference 1N4245 GP 004 DIODE GP 724 DIODE 00G3315 D041/D015 D0204/VP GP10A GP10B GP10D

smd diode E7

Abstract: sch550 RECTIFIER AND ZE N ER DIODE SELEC TOR GUIDE & CROSS R EFER ENC E 20 GENERAL INSTRUMENT GENL INSTR , 400 100 200 250 300 RECTIFIER AND ZEN ER DIODE SELECTOR GUIDE & CROSS REFERENC E 21 , Special Axial-Leaded Formed Devices Standard Horizontal Ammo Pack (Metric) GL41 SMD 12MM Tape, 7" Diameter Reel GL41 SMD 12MM Tape, 13" Diameter Reel Standard Horizontal Reel, Class III, 14" Diameter, (Metric 73MM) GL34 SMD, 8MM Tape, 7" Diameter Reel GL34 SMD, 8MM Tape, 13" Diameter Reel Tab Mounted EFR8 Chip
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T0-220CT SCH530 SCH360 smd diode E7 sch550 MBR2 SBL3030PT SBL1630PT MBR2035CT MBR2535CT MBR3035PT

Q67060-S6058-A102

Abstract: BTS6144B dump) · Loss of ground protection · Loss of Vbb protection (with external diode for charged , Parameter and Conditions Symbol chip - case: RthJC 5) junction - ambient (free air): RthJA SMD , °C, Tj 150°C SMD 6), VON 0.5 V, TA = 85°C, Tj 150°C Turn-on time to 90% VOUT: Turn-off time to 10 , -dV/dtoff - 0.2 0.45 V/µs VIN= 0, Vbb= 12V, IL = 10 A 5) 6) VON(NL) IL(ISO , eventually in a current flow via the intrinsic diode of the power DMOS. In this case the device switches on
Infineon Technologies
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BTS6144P Q67060-S6058-A102 BTS6144B IL12 S6058 6144B/P Q67060-S6320-A102 2003-O
Abstract: dump) · Loss of ground protection · Loss of Vbb protection (with external diode for charged inductive , ): RthJA SMD version, device on PCB 6): Values typ max 0.7 0.8 60 -33 40 Unit K/W Electrical , V, TC = 85°C, Tj 150°C SMD 6), VON 0.5 V, TA = 85°C, Tj 150°C Turn-on time to 90% VOUT: Turn-off , Slew rate off 50 to 25% VOUT, RL = 2.2 , Tj=-40.150 °C VON(NL) mV IL(ISO) IL(nom) ton toff , ) Permanent Inverse operation results eventually in a current flow via the intrinsic diode of the power DMOS Infineon Technologies
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SMD transistor package code V12

Abstract: SMD) · Loss of Vbb protection (with external diode for charged inductive loads) · Very low standby , min -chip - case: RthJC junction - ambient (free air): RthJA SMD version, device on PCB 5): Values , current (Tab to pin 1,5) ISO Proposal: VON 0.5 V, TC = 85°C, Tj 150°C SMD 5), VON 0.5 V, TA = 85°C, Tj , VON(NL) mV IL(ISO) IL(nom) ton toff dV /dton -dV/dtoff 17 5.5 -0.3 0.2 21.5 6.5 250 250 , diode of the power DMOS. In this case the device switches on with a time delay td(inv) after the
Infineon Technologies
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SMD transistor package code V12
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