500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Top Results

Part Manufacturer Description Datasheet BUY
ISL99125BDRZ-T Intersil Corporation 25A DrMOS Module with Diode Emulation and PS4; QFN24; Temp Range: 0° to 70° visit Intersil
ISL99135BDRZ-T Intersil Corporation 35A DrMOS Module with Diode Emulation and PS4; QFN24; Temp Range: 0° to 70° visit Intersil
TPD4E004DSFR Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD3E001DRY Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
ISL58315CRTZ Intersil Corporation High Speed Triple Laser Diode Drivers; TQFN40; Temp Range: 0° to 70° visit Intersil Buy
ISL58315CRTZ-T13 Intersil Corporation High Speed Triple Laser Diode Drivers; TQFN40; Temp Range: 0° to 70° visit Intersil Buy

smd diode marking DF

Catalog Datasheet MFG & Type PDF Document Tags

smd DIODE code marking 20A

Abstract: Rectifiers SMD Diode Specialist Marking Code Part Number DF2005-G DF201-G DF202-G DF204-G DF206-G DF208-G DF210-G Marking code - DF2005 DF201 DF202 DF204 DF206 DF208 DF210 C + , Comchip Glass Passivated Bridge Rectifiers SMD Diode Specialist DF2005-G Thru. DF210-G Reverse Voltage: 50 to 1000V Forward Current: 2.0A RoHS Device Features DF -Rating to 1000V PRV , Rectifiers SMD Diode Specialist Rating and Characteristics Curves (DF2005-G Thru. DF210-G) FIG.1 -
Comchip Technology
Original
smd DIODE code marking 20A QW-BBR48

smd code diode 20a

Abstract: Rectifiers SMD Diode Specialist Marking Code Part Number DF2005-G DF201-G DF202-G DF204-G DF206-G DF208-G DF210-G Marking code - DF2005 DF201 DF202 DF204 DF206 DF208 DF210 + C DFxxx , Comchip Glass Passivated Bridge Rectifiers SMD Diode Specialist DF2005-G Thru. DF210-G Reverse Voltage: 50 to 1000V Forward Current: 2.0A RoHS Device DF Features -Rating to 1000V PRV , Bridge Rectifiers SMD Diode Specialist Rating and Characteristics Curves (DF2005-G Thru. DF210-G
Comchip Technology
Original
smd code diode 20a

05N03LA

Abstract: 05n03l target application 25 V R DS(on),max (SMD version) 5.1 m ID 50 A · N-channel , Ordering Code Marking IPD05N03LA P-TO252-3-11 Q67042-S4144 05N03LA IPF05N03LA Package , Q67042-S4230 IPU05N03LA Marking 05N03LA P-TO251-3-21 05N03LA Q67042-S4230 05N03LA 05N03LA , =25 300 Reverse diode dv /dt dv /dt I D=50 A, V DS=20 V, di /dt =200 A/µs, T j,max=175 °C 6 , Thermal characteristics Thermal resistance, junction - case R thJC SMD version, device on PCB R
Infineon Technologies
Original
IPS05N03LA 05n03l 05N03 P-TO252 S4230 P-TO251 diode SMD marking code 27 P-TO252-3-23 Q67042-S P-TO251-3-11 Q67042-S4194 Q67042-S4244

marking code br 39 SMD

Abstract: 05n03la ),max (SMD version) ID 25 5.1 50 V m A Type IPD05N03LA G IPF05N03LA G IPS05N03LA G IPU05N03LA G Type IPD05N03LA IPF05N03LA Package IPS05N03LA Ordering Code IPU05N03LA Marking Package , Q67042-S4144 PG-TO252-3-23 Q67042-S Q67042-S4 Q67042-S283 05N03LA Q67042-S4230 Marking 05N03LA 05N03LA , =25 °C2) T C=100 °C Pulsed drain current Avalanche energy, single pulse Reverse diode dv /dt Gate source , min. Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB R thJC R
Infineon Technologies
Original
marking code br 39 SMD smd marking code 321 PG-TO252-3-11 P-TO2277 PG-TO251-3-11 PG-TO251-3-21 Q67042-S4273

PG-TO220-3

Abstract: PG-TO263-3-2 DS(on),max ID m 78 SMD version V 11 V DS A · 175 °C operating temperature · , IPB110N06L G Type IPP110N06L G Package Marking Package IPB110N06L G PG-TO263-3-2 P-TO263-3-2 PG-TO220-3-1 110N06L Marking IPP110N06L G 110N06L P-TO220-3-1 110N06L 110N06L Maximum , diode dv /dt dv /dt I D=78 A, V DS=48 V, di /dt =200 A/µs, T j,max=175 °C 6 Gate source , characteristics Thermal resistance, junction - case R thJC SMD version, device on PCB R thJA K/W
Infineon Technologies
Original
IEC61249-2-21 PG-TO220-3 IPP110N06L G

marking D53

Abstract: Avalanche rated · Pb-free lead plating, RoHS compliant Product Summary V DS R DS(on),max ID SMD version , Marking Package P-TO263-3-2 P-TO263-3-2 085N06L P-TO220-3-1 Marking P-TO220-3-1 085N06L 085N06L , diode dv /dt Gate source voltage Power dissipation Operating and storage temperature IEC climatic , SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area3) Electrical , =4.5 V, I D=53 A V GS=10 V, I D=80 A, SMD version V GS=4.5 V, I D=53 A, SMD version Gate resistance
Infineon Technologies
Original
marking D53 IPB085N06L IPP085N06L

SMD MARKING D80

Abstract: Avalanche rated · Pb-free lead plating, RoHS compliant Product Summary V DS R DS(on),max ID SMD version , Marking Package P-TO263-3-2 P-TO263-3-2 085N06L P-TO220-3-1 Marking P-TO220-3-1 085N06L 085N06L , diode d v /dt Gate source voltage Power dissipation Operating and storage temperature IEC climatic , SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area3) Electrical , =4.5 V, I D=53 A V GS=10 V, I D=80 A, SMD version V GS=4.5 V, I D=53 A, SMD version Gate resistance
Infineon Technologies
Original
SMD MARKING D80

marking D78

Abstract: smd diode marking 78A Avalanche rated · Pb-free lead plating, RoHS compliant Product Summary V DS R DS(on),max ID SMD version , Marking Package PG-TO263-3-2 P-TO263-3-2 110N06L P-TO220-3-1 Marking PG-TO220-3-1 110N06L 110N06L , diode d v /dt Gate source voltage Power dissipation Operating and storage temperature IEC climatic , , junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area2) Electrical , =4.5 V, I D=52 A V GS=10 V, I D=78 A, SMD version V GS=4.5 V, I D=52 A, SMD version Gate resistance
Infineon Technologies
Original
marking D78 smd diode marking 78A

04N03LA

Abstract: IPD04N03LA Product Summary Package V DS Marking · Qualified according to JEDEC1) for target applications 25 V R DS(on),max (SMD version) 3.8 m ID 50 A · N-channel, logic level · , IPU04N03LA Package P-TO252-3-11 P-TO252-3-23 P-TO251-3-11 P-TO251-3-1 Marking 04N03LA , AS I D=45 A, R GS=25 600 Reverse diode dv /dt dv /dt I D=50 A, V DS=20 V, di /dt , case R thJC SMD version, device on PCB R thJA K/W Electrical characteristics, at T j
Infineon Technologies
Original
IPD04N03LA IPF04N03LA IPS04N03LA

070N06L

Abstract: g2ns logic level 60 6.7 ID m 80 SMD version V A · 175 °C operating temperature · , Package Marking IPB070N06L G Package PG-TO263-3 PG-TO263-3 PG-TO220-3 070N06L IPP070N06L G Marking 070N06L PG-TO220-3 070N06L 070N06L Maximum ratings, at T j=25 °C, unless , Avalanche energy, single pulse E AS I D=80 A, R GS=25 450 Reverse diode dv /dt dv /dt I D , , junction - case R thJC SMD version, device on PCB R thJA K/W Electrical characteristics, at
Infineon Technologies
Original
g2ns 070N0 PG-TO-220-3 D53A

04N03LA

Abstract: 04n03l Product Summary Package V DS Marking · Qualified according to JEDEC1) for target applications 25 V R DS(on),max (SMD version) 3.8 m ID 50 A · N-channel, logic level · , IPU04N03LA Package P-TO252-3-11 P-TO252-3-23 P-TO251-3-11 P-TO251-3-1 Marking 04N03LA , AS I D=45 A, R GS=25 600 Reverse diode dv /dt dv /dt I D=50 A, V DS=20 V, di /dt , case R thJC SMD version, device on PCB R thJA K/W Electrical characteristics, at T j
Infineon Technologies
Original
04n03l smd marking D50 smd diode marking c3

05N03LA

Abstract: IPU05N03LA (SMD version) ID 25 5.1 50 V m A Type IPD05N03LA G IPF05N03LA G IPS05N03LA G IPU05N03LA G Type IPD05N03LA IPF05N03LA Package IPS05N03LA Ordering Code IPU05N03LA Marking Package , Q67042-S4144 PG-TO252-3-23 Q67042-S Q67042-S4283 Q67042-S 05N03LA Q67042-S4230 Marking 05N03LA 05N03LA , =25 °C2) T C=100 °C Pulsed drain current Avalanche energy, single pulse Reverse diode d v /dt Gate source , min. Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB R thJC R
Infineon Technologies
Original
p 181 V Q67042-S4277 IPS05N03L

070N06L

Abstract: IEC61249-2-21 (on),max ID m 80 SMD version V 6.7 V DS A · 175 °C operating temperature · , IPB070N06L G Type IPP070N06L G Package Marking IPB070N06L G Package PG-TO263-3 PG-TO263-3 PG-TO220-3 070N06L IPP070N06L G Marking 070N06L PG-TO220-3 070N06L 070N06L Maximum ratings , diode dv /dt dv /dt I D=80 A, V DS=48 V, di /dt =200 A/µs, T j,max=175 °C 6 Gate source , Thermal resistance, junction - case R thJC SMD version, device on PCB R thJA K/W Electrical
Infineon Technologies
Original

DIODE smd marking Ag

Abstract: 070N06L (on),max 60 7 ID m 80 SMD version V A · 175 °C operating temperature · , Package Marking IPB070N06L G Package PG-TO263-3 PG-TO263-3 PG-TO220-3 070N06L IPP070N06L G Marking 070N06L PG-TO220-3 070N06L 070N06L Maximum ratings, at T j=25 °C, unless , Avalanche energy, single pulse E AS I D=80 A, R GS=25 450 Reverse diode dv /dt dv /dt I D , R thJC SMD version, device on PCB R thJA K/W Electrical characteristics, at T j=25 °C
Infineon Technologies
Original
DIODE smd marking Ag

110N06L

Abstract: g3pf DS(on),max 60 11 ID m 78 SMD version V A · 175 °C operating temperature · , Package Marking IPB110N06L G Package PG-TO263-3-2 P-TO263-3-2 PG-TO220-3-1 110N06L IPP110N06L G Marking 110N06L P-TO220-3-1 110N06L 110N06L Maximum ratings, at T j=25 °C, unless , Avalanche energy, single pulse E AS I D=78 A, R GS=25 280 Reverse diode dv /dt dv /dt I D , R thJC SMD version, device on PCB R thJA K/W Electrical characteristics, at T j=25 °C
Infineon Technologies
Original
g3pf SMD diode D94 MARKING G3 INFINEON

110N06L

Abstract: smd diode 78a logic level 60 11 ID m 78 SMD version V A · 175 °C operating temperature · , Package Marking IPB110N06L G Package PG-TO263-3 P-TO26 PG-TO220-3 110N06L IPP110N06L G Marking 110N06L P-TO220-3-1 110N06L 110N06L Maximum ratings, at T j=25 °C, unless otherwise , energy, single pulse E AS I D=78 A, R GS=25 280 Reverse diode dv /dt dv /dt I D=78 A, V , , junction - case R thJC SMD version, device on PCB R thJA K/W Electrical characteristics, at
Infineon Technologies
Original
smd diode 78a PG-TO263 diode smd 312 IPP110N

085N06L

Abstract: smd marking g23 logic level 60 8.2 ID m 80 SMD version V A · 175 °C operating temperature · , Package Marking IPB085N06L G Package PG-TO263-3 P-TO262 PG-TO220-3 085N06L IPP085N06L G Marking 085N06L P-TO220-3-1 085N06L 085N06L Maximum ratings, at T j=25 °C, unless otherwise , energy, single pulse E AS I D=80 A, R GS=25 370 Reverse diode dv /dt dv /dt I D=80 A, V , R thJC SMD version, device on PCB R thJA K/W Electrical characteristics, at T j=25 °C
Infineon Technologies
Original
smd marking g23 marking g23 SMD
Abstract: Product Summary Package V DS Marking â'¢ Qualified according to JEDEC1) for target applications 25 V R DS(on),max (SMD version) 3.8 mâ"¦ ID 50 A â'¢ N-channel, logic level , IPS04N03LA IPU04N03LA Package P-TO252-3-11 P-TO252-3-23 P-TO251-3-11 P-TO251-3-1 Marking , , single pulse E AS I D=45 A, R GS=25 â"¦ 600 Reverse diode dv /dt dv /dt I D=50 A, V DS , resistance, junction - case R thJC SMD version, device on PCB R thJA K/W Electrical Infineon Technologies
Original

070N06L

Abstract: SMD MARKING ASF Avalanche rated · Pb-free lead plating, RoHS compliant Product Summary V DS R DS(on),max ID SMD version , Marking Package PG-TO263-3 PG-TO263-3 070N06L PG-TO220-3 Marking PG-TO220-3 070N06L 070N06L 070N06L , Conditions ID T C=25 °C1) T C=100 °C Pulsed drain current Avalanche energy, single pulse Reverse diode d v , , junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area3) Electrical , =4.5 V, I D=53 A V GS=10 V, I D=80 A, SMD version V GS=4.5 V, I D=53 A, SMD version Gate resistance
Infineon Technologies
Original
SMD MARKING ASF

085N06L

Abstract: IEC61249-2-21 DS(on),max ID m 80 SMD version V 8.2 V DS A · 175 °C operating temperature , -2-21 Type IPB085N06L G Type IPP085N06L G Package Marking IPB085N06L G Package P-TO263-3-2 P-TO263-3-2 P-TO220-3-1 085N06L IPP085N06L G Marking 085N06L P-TO220-3-1 085N06L 085N06L , =25 370 Reverse diode dv /dt dv /dt I D=80 A, V DS=48 V, di /dt =200 A/µs, T j,max=175 °C 6 , - Thermal characteristics Thermal resistance, junction - case R thJC SMD version, device
Infineon Technologies
Original
Showing first 20 results.