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HIH-5030-001 Honeywell Sensing and Control TEMPERATURE SENSOR, PDSO4, PLASTIC, SMD-4 ri Buy
HIH-5031-001 Honeywell Sensing and Control TEMPERATURE SENSOR, PDSO4, PLASTIC, SMD-4 ri Buy
HIH-4031-001 Honeywell Sensing and Control SPECIALTY ANALOG CIRCUIT, PDSO4, PLASTIC, SMD-4 ri Buy

smd diode marking DF

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: Rectifiers SMD Diode Specialist Marking Code Part Number DF2005-G DF2005-G DF201-G DF201-G DF202-G DF202-G DF204-G DF204-G DF206-G DF206-G DF208-G DF208-G DF210-G DF210-G Marking code - DF2005 DF2005 DF201 DF201 DF202 DF202 DF204 DF204 DF206 DF206 DF208 DF208 DF210 DF210 C + , Comchip Glass Passivated Bridge Rectifiers SMD Diode Specialist DF2005-G DF2005-G Thru. DF210-G DF210-G Reverse Voltage: 50 to 1000V Forward Current: 2.0A RoHS Device Features DF -Rating to 1000V PRV , Rectifiers SMD Diode Specialist Rating and Characteristics Curves (DF2005-G DF2005-G Thru. DF210-G DF210-G) FIG.1 - ... Comchip Technology
Original
datasheet

3 pages,
40.79 Kb

smd DIODE code marking 20A TEXT
datasheet frame
Abstract: Rectifiers SMD Diode Specialist Marking Code Part Number DF2005-G DF2005-G DF201-G DF201-G DF202-G DF202-G DF204-G DF204-G DF206-G DF206-G DF208-G DF208-G DF210-G DF210-G Marking code - DF2005 DF2005 DF201 DF201 DF202 DF202 DF204 DF204 DF206 DF206 DF208 DF208 DF210 DF210 + C DFxxx , Comchip Glass Passivated Bridge Rectifiers SMD Diode Specialist DF2005-G DF2005-G Thru. DF210-G DF210-G Reverse Voltage: 50 to 1000V Forward Current: 2.0A RoHS Device DF Features -Rating to 1000V PRV , Bridge Rectifiers SMD Diode Specialist Rating and Characteristics Curves (DF2005-G DF2005-G Thru. DF210-G DF210-G ... Comchip Technology
Original
datasheet

3 pages,
49.38 Kb

TEXT
datasheet frame
Abstract: target application 25 V R DS(on),max (SMD version) 5.1 m ID 50 A · N-channel , Ordering Code Marking IPD05N03LA IPD05N03LA P-TO252-3-11 P-TO252-3-11 Q67042-S4144 Q67042-S4144 05N03LA 05N03LA IPF05N03LA IPF05N03LA Package , Q67042-S4230 Q67042-S4230 IPU05N03LA IPU05N03LA Marking 05N03LA 05N03LA P-TO251-3-21 P-TO251-3-21 05N03LA 05N03LA Q67042-S4230 Q67042-S4230 05N03LA 05N03LA 05N03LA 05N03LA , =25 300 Reverse diode dv /dt dv /dt I D=50 A, V DS=20 V, di /dt =200 A/us, T j,max=175 °C 6 , Thermal characteristics Thermal resistance, junction - case R thJC SMD version, device on PCB R ... Infineon Technologies
Original
datasheet

11 pages,
430.9 Kb

TRANSISTOR SMD MARKING CODE ag IPD05N03LA IPF05N03LA IPS05N03LA IPU05N03LA marking CODE R SMD DIODE smd marking av P-TO251 P-TO252 S4230 diode SMD marking code 27 P-TO252-3-11 05N03 05n03l 05N03LA TEXT
datasheet frame
Abstract: ),max (SMD version) ID 25 5.1 50 V m A Type IPD05N03LA IPD05N03LA G IPF05N03LA IPF05N03LA G IPS05N03LA IPS05N03LA G IPU05N03LA IPU05N03LA G Type IPD05N03LA IPD05N03LA IPF05N03LA IPF05N03LA Package IPS05N03LA IPS05N03LA Ordering Code IPU05N03LA IPU05N03LA Marking Package , Q67042-S4144 Q67042-S4144 PG-TO252-3-23 PG-TO252-3-23 Q67042-S Q67042-S Q67042-S4 Q67042-S4 Q67042-S283 Q67042-S283 05N03LA 05N03LA Q67042-S4230 Q67042-S4230 Marking 05N03LA 05N03LA 05N03LA 05N03LA , =25 °C2) T C=100 °C Pulsed drain current Avalanche energy, single pulse Reverse diode dv /dt Gate source , min. Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB R thJC R ... Infineon Technologies
Original
datasheet

11 pages,
450.08 Kb

smd marking code 321 marking code br 39 SMD IPD05N03LA IPS05N03LA IPF05N03LA IPU05N03LA TEXT
datasheet frame
Abstract: DS(on),max ID m 78 SMD version V 11 V DS A · 175 °C operating temperature · , IPB110N06L IPB110N06L G Type IPP110N06L IPP110N06L G Package Marking Package IPB110N06L IPB110N06L G PG-TO263-3-2 PG-TO263-3-2 P-TO263-3-2 P-TO263-3-2 PG-TO220-3-1 PG-TO220-3-1 110N06L 110N06L Marking IPP110N06L IPP110N06L G 110N06L 110N06L P-TO220-3-1 P-TO220-3-1 110N06L 110N06L 110N06L 110N06L Maximum , diode dv /dt dv /dt I D=78 A, V DS=48 V, di /dt =200 A/us, T j,max=175 °C 6 Gate source , characteristics Thermal resistance, junction - case R thJC SMD version, device on PCB R thJA K/W ... Infineon Technologies
Original
datasheet

10 pages,
411.6 Kb

PG-TO263-3-2 PG-TO220-3 IPP110N06L G IEC61249-2-21 110N06L IPB110N06L IPP110N06L TEXT
datasheet frame
Abstract: Avalanche rated · Pb-free lead plating, RoHS compliant Product Summary V DS R DS(on),max ID SMD version , Marking Package P-TO263-3-2 P-TO263-3-2 P-TO263-3-2 P-TO263-3-2 085N06L 085N06L P-TO220-3-1 P-TO220-3-1 Marking P-TO220-3-1 P-TO220-3-1 085N06L 085N06L 085N06L 085N06L , diode dv /dt Gate source voltage Power dissipation Operating and storage temperature IEC climatic , SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area3) Electrical , =4.5 V, I D=53 A V GS=10 V, I D=80 A, SMD version V GS=4.5 V, I D=53 A, SMD version Gate resistance ... Infineon Technologies
Original
datasheet

10 pages,
440.98 Kb

marking D53 IPB085N06L IPP085N06L TEXT
datasheet frame
Abstract: Avalanche rated · Pb-free lead plating, RoHS compliant Product Summary V DS R DS(on),max ID SMD version , Marking Package P-TO263-3-2 P-TO263-3-2 P-TO263-3-2 P-TO263-3-2 085N06L 085N06L P-TO220-3-1 P-TO220-3-1 Marking P-TO220-3-1 P-TO220-3-1 085N06L 085N06L 085N06L 085N06L , diode d v /dt Gate source voltage Power dissipation Operating and storage temperature IEC climatic , SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area3) Electrical , =4.5 V, I D=53 A V GS=10 V, I D=80 A, SMD version V GS=4.5 V, I D=53 A, SMD version Gate resistance ... Infineon Technologies
Original
datasheet

10 pages,
429.57 Kb

SMD MARKING D80 IPB085N06L IPP085N06L TEXT
datasheet frame
Abstract: Avalanche rated · Pb-free lead plating, RoHS compliant Product Summary V DS R DS(on),max ID SMD version , Marking Package PG-TO263-3-2 PG-TO263-3-2 P-TO263-3-2 P-TO263-3-2 110N06L 110N06L P-TO220-3-1 P-TO220-3-1 Marking PG-TO220-3-1 PG-TO220-3-1 110N06L 110N06L 110N06L 110N06L , diode d v /dt Gate source voltage Power dissipation Operating and storage temperature IEC climatic , , junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area2) Electrical , =4.5 V, I D=52 A V GS=10 V, I D=78 A, SMD version V GS=4.5 V, I D=52 A, SMD version Gate resistance ... Infineon Technologies
Original
datasheet

10 pages,
429.8 Kb

smd diode marking 78A marking D78 IPB110N06L IPP110N06L TEXT
datasheet frame
Abstract: Product Summary Package V DS Marking · Qualified according to JEDEC1) for target applications 25 V R DS(on),max (SMD version) 3.8 m ID 50 A · N-channel, logic level · , IPU04N03LA IPU04N03LA Package P-TO252-3-11 P-TO252-3-11 P-TO252-3-23 P-TO252-3-23 P-TO251-3-11 P-TO251-3-11 P-TO251-3-1 P-TO251-3-1 Marking 04N03LA 04N03LA , AS I D=45 A, R GS=25 600 Reverse diode dv /dt dv /dt I D=50 A, V DS=20 V, di /dt , case R thJC SMD version, device on PCB R thJA K/W Electrical characteristics, at T j ... Infineon Technologies
Original
datasheet

12 pages,
525.21 Kb

P-TO252-3-11 P-TO251-3-1 IPU04N03LA IPS04N03LA IPF04N03LA IPD04N03LA 04N03LA TEXT
datasheet frame
Abstract: logic level 60 6.7 ID m 80 SMD version V A · 175 °C operating temperature · , Package Marking IPB070N06L IPB070N06L G Package PG-TO263-3 PG-TO263-3 PG-TO263-3 PG-TO263-3 PG-TO220-3 PG-TO220-3 070N06L 070N06L IPP070N06L IPP070N06L G Marking 070N06L 070N06L PG-TO220-3 PG-TO220-3 070N06L 070N06L 070N06L 070N06L Maximum ratings, at T j=25 °C, unless , Avalanche energy, single pulse E AS I D=80 A, R GS=25 450 Reverse diode dv /dt dv /dt I D , , junction - case R thJC SMD version, device on PCB R thJA K/W Electrical characteristics, at ... Infineon Technologies
Original
datasheet

10 pages,
377.75 Kb

PG-TO220-3 PG-TO-220-3 070N0 070N06L IPB070N06L IPP070N06L TEXT
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