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Abstract: F5B Capacitor / Diode unit METALLIZED POLYESTER FILM CAPACITOR WITH INTEGRATED BIDIRECTIONAL SUPPRESSOR DIODE HIGH PERFORMANCE PEAK REDUCTION Typical applications: these component units are used to , H +0.1 L +0.35 Diode The F5B Series was designed for ambitious suppression demands and peak , capacitors in parallel construction with bidirectional suppressor diode (TVS, Transient Voltage Suppressor , applications without PC-board (e.g. motor suppression) or mixed leaded and SMD PC-boards. Upon customer's ... Original
datasheet

2 pages,
259.26 Kb

100nF 63V polyester capacitor suppressor diode smd Kemet CAPACITOR DATE CODE MARKING datasheet abstract
datasheet frame
Abstract: F5B Capacitor / Diode unit metallized POLYester film CAPACITOR with Integrated bidirectional suppressor diode High performance peak reduction Typical applications: these component units are used to , max H max L max B +0.1 H +0.1 L +0.3 B +0.1 H +0.1 L +0.35 Diode The F5B Series was , suppressor diode (TVS, Transient Voltage Suppressor) in one single case. The leaded EMI-RFI suppression , mixed leaded and SMD PC-boards. Upon customer's request there is also the possibility to create and ... Original
datasheet

2 pages,
220.41 Kb

varistor ck suppressor diode smd smd code marking CK CK 78 smd datasheet abstract
datasheet frame
Abstract: DS(on),max 60 8.2 ID m 80 SMD version V A · 175 °C operating temperature · , Package Marking IPB085N06L IPB085N06L G Package P-TO263-3-2 P-TO263-3-2 P-TO263-3-2 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 085N06L 085N06L IPP085N06L IPP085N06L G Marking 085N06L 085N06L P-TO220-3-1 P-TO220-3-1 085N06L 085N06L 085N06L 085N06L Maximum ratings, at T j=25 °C, unless , Avalanche energy, single pulse E AS I D=80 A, R GS=25 370 Reverse diode dv /dt dv /dt I , R thJC SMD version, device on PCB R thJA K/W Electrical characteristics, at T j=25 °C ... Original
datasheet

10 pages,
441.09 Kb

PG-TO220-3 IPB085N06L G IPB085N06L 085N06L IPP085N06L IPB085N06L abstract
datasheet frame
Abstract: (on),max 60 7 ID m 80 SMD version V A · 175 °C operating temperature · , Package Marking IPB070N06L IPB070N06L G Package PG-TO263-3 PG-TO263-3 PG-TO263-3 PG-TO263-3 PG-TO220-3 PG-TO220-3 070N06L 070N06L IPP070N06L IPP070N06L G Marking 070N06L 070N06L PG-TO220-3 PG-TO220-3 070N06L 070N06L 070N06L 070N06L Maximum ratings, at T j=25 °C, unless , Avalanche energy, single pulse E AS I D=80 A, R GS=25 450 Reverse diode dv /dt dv /dt I , R thJC SMD version, device on PCB R thJA K/W Electrical characteristics, at T j=25 °C ... Original
datasheet

10 pages,
440.56 Kb

PG-TO220-3 DIODE smd marking Ag 070N06L IPB070N06L IPP070N06L IPB070N06L abstract
datasheet frame
Abstract: DS(on),max 60 11 ID m 78 SMD version V A · 175 °C operating temperature · , Package Marking IPB110N06L IPB110N06L G Package PG-TO263-3-2 PG-TO263-3-2 P-TO263-3-2 P-TO263-3-2 PG-TO220-3-1 PG-TO220-3-1 110N06L 110N06L IPP110N06L IPP110N06L G Marking 110N06L 110N06L P-TO220-3-1 P-TO220-3-1 110N06L 110N06L 110N06L 110N06L Maximum ratings, at T j=25 °C, unless , Avalanche energy, single pulse E AS I D=78 A, R GS=25 280 Reverse diode dv /dt dv /dt I , R thJC SMD version, device on PCB R thJA K/W Electrical characteristics, at T j=25 °C ... Original
datasheet

10 pages,
443.62 Kb

PG-TO263-3-2 PG-TO220-3 DIODE smd marking Ag 110N06L IPB110N06L IPP110N06L IPB110N06L abstract
datasheet frame
Abstract: DS(on),max ID m 80 SMD version V 8.2 V DS A · 175 °C operating temperature , Type IPB085N06L IPB085N06L G Type IPP085N06L IPP085N06L G Package Marking IPB085N06L IPB085N06L G Package P-TO263-3-2 P-TO263-3-2 P-TO263-3-2 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 085N06L 085N06L IPP085N06L IPP085N06L G Marking 085N06L 085N06L P-TO220-3-1 P-TO220-3-1 085N06L 085N06L , 370 Reverse diode dv /dt dv /dt I D=80 A, V DS=48 V, di /dt =200 A/us, T j,max=175 °C 6 , - Thermal characteristics Thermal resistance, junction - case R thJC SMD version, device ... Original
datasheet

10 pages,
411.06 Kb

PG-TO220-3 IPB085N06L IEC61249-2-21 085N06L IPP085N06L IPB085N06L abstract
datasheet frame
Abstract: DS(on),max ID m 78 SMD version V 11 V DS A · 175 °C operating temperature · , IPB110N06L IPB110N06L G Type IPP110N06L IPP110N06L G Package Marking Package IPB110N06L IPB110N06L G PG-TO263-3-2 PG-TO263-3-2 P-TO263-3-2 P-TO263-3-2 PG-TO220-3-1 PG-TO220-3-1 110N06L 110N06L Marking IPP110N06L IPP110N06L G 110N06L 110N06L P-TO220-3-1 P-TO220-3-1 110N06L 110N06L 110N06L 110N06L , Reverse diode dv /dt dv /dt I D=78 A, V DS=48 V, di /dt =200 A/us, T j,max=175 °C 6 Gate , characteristics Thermal resistance, junction - case R thJC SMD version, device on PCB R thJA K/W ... Original
datasheet

10 pages,
411.6 Kb

PG-TO263-3-2 PG-TO220-3 IPP110N06L G IEC61249-2-21 110N06L IPB110N06L IPP110N06L IPB110N06L abstract
datasheet frame
Abstract: (on),max ID m 80 SMD version V 6.7 V DS A · 175 °C operating temperature · , IPB070N06L IPB070N06L G Type IPP070N06L IPP070N06L G Package Marking IPB070N06L IPB070N06L G Package PG-TO263-3 PG-TO263-3 PG-TO263-3 PG-TO263-3 PG-TO220-3 PG-TO220-3 070N06L 070N06L IPP070N06L IPP070N06L G Marking 070N06L 070N06L PG-TO220-3 PG-TO220-3 070N06L 070N06L 070N06L 070N06L Maximum ratings , diode dv /dt dv /dt I D=80 A, V DS=48 V, di /dt =200 A/us, T j,max=175 °C 6 Gate source , Thermal resistance, junction - case R thJC SMD version, device on PCB R thJA K/W Electrical ... Original
datasheet

10 pages,
411.02 Kb

PG-TO220-3 IEC61249-2-21 IPB070N06L IPP070N06L IPB070N06L abstract
datasheet frame
Abstract: logic level 60 6.7 ID m 80 SMD version V A · 175 °C operating temperature · , Package Marking IPB070N06L IPB070N06L G Package PG-TO263-3 PG-TO263-3 PG-TO263-3 PG-TO263-3 PG-TO220-3 PG-TO220-3 070N06L 070N06L IPP070N06L IPP070N06L G Marking 070N06L 070N06L PG-TO220-3 PG-TO220-3 070N06L 070N06L 070N06L 070N06L Maximum ratings, at T j=25 °C, unless , Avalanche energy, single pulse E AS I D=80 A, R GS=25 450 Reverse diode dv /dt dv /dt I , , junction - case R thJC SMD version, device on PCB R thJA K/W Electrical characteristics, at ... Original
datasheet

10 pages,
377.75 Kb

PG-TO220-3 PG-TO-220-3 IPB070N06L IPP070N06L IPB070N06L abstract
datasheet frame
Abstract: logic level 60 11 ID m 78 SMD version V A · 175 °C operating temperature · , Package Marking IPB110N06L IPB110N06L G Package PG-TO263-3 PG-TO263-3 P-TO26 P-TO26 PG-TO220-3 PG-TO220-3 110N06L 110N06L IPP110N06L IPP110N06L G Marking 110N06L 110N06L P-TO220-3-1 P-TO220-3-1 110N06L 110N06L 110N06L 110N06L Maximum ratings, at T j=25 °C, unless otherwise , , single pulse E AS I D=78 A, R GS=25 280 Reverse diode dv /dt dv /dt I D=78 A, V DS=48 V , case R thJC SMD version, device on PCB R thJA K/W Electrical characteristics, at T j=25 ... Original
datasheet

10 pages,
331.13 Kb

PG-TO220-3 IPB110N06L IPP110N06L IPB110N06L abstract
datasheet frame

Extended Electronics Archive (Experimental)

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Over 1.1 million files (1986-2013): html articles, reference designs, gerber files, chemical content, spice models, programs, code, pricing, images, circuits, parametric data, RoHS data, cross references, pcns, military data, and more. Please note that due to their age, these files do not always format correctly in modern browsers. Disclaimer.
 
(max) (mA) RFE amplifier Flatness delay (double speed), t d(f) (ns) Diode current amplifiers Diode output offset current, I os(d) (max) (nA) RFE amplifier Flatness delay (double speed), t d(f Standard Marking * Reel Pack, SMD, 13" SOT137 RFS amplifiers which amplify and filter the focus and radial diode signals adequately and provides an equalized with all N-sub lasers and N-sub or P-sub monitor diode units. After a single initial adjustment the
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Philips 14/02/2002 12.33 Kb HTML tda1300t_tt_3-v2.html
079: High-quality, glass-passivated diodes Implotec - BYD33J BYD33J BYD33J BYD33J 2000-02-07 16 1 0 /catalog/appnotes/17079 Title Date FS080 FS080 FS080 FS080: High-quality, glass-passivated diodes glass bead - BYV27-200 BYV27-200 BYV27-200 BYV27-200 2000-02-07 18 1 0 Ballast: Base Drive Optimisation 1999-05-17 FS079 FS079 FS079 FS079: High-quality, glass-passivated diodes Implotec - BYD33J BYD33J BYD33J BYD33J Ballast: Base Drive Optimisation 1999-05-17 FS079 FS079 FS079 FS079: High-quality, glass-passivated diodes Implotec - BYD33J BYD33J BYD33J BYD33J diodes Title Date FS046 FS046 FS046 FS046: An Electronic Ballast: Base Drive Optimisation 1999-05-17 137 1 0 /catalog
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Philips 25/04/2003 954.24 Kb TXT docindex.txt
/parametrics/19.html Parametrics PDZ12B PDZ12B PDZ12B PDZ12B Configuration 1 Ptot max mW 400 Category General purpose zener diodes I F /parametrics/78.html Parametrics BAQ800 BAQ800 BAQ800 BAQ800 DIODE CAPACITANCE pF 5 DESCRIPTION AM PIN diode CHARGE CARRIER LIFE TIME us 25 1 MHz DIODE SERIES RESISTANCE k 31 1 0 /catalog/parametrics/79.html Parametrics TEA5711/N2 TEA5711/N2 TEA5711/N2 TEA5711/N2 709A 4 2PB709AR 2PB709AR 2PB709AR 2PB709AR .SUBCKT 2PB709AR 2PB709AR 2PB709AR 2PB709AR 1 2 3 Q1 1 2 3 2PB709AR 2PB709AR 2PB709AR 2PB709AR + AREA = 1 D1 1 2 DIODE The diode 70 1 0 601A 5 2PD601AR 2PD601AR 2PD601AR 2PD601AR .SUBCKT 2PD601AR 2PD601AR 2PD601AR 2PD601AR 1 2 3 Q1 1 2 3 2PD601AR 2PD601AR 2PD601AR 2PD601AR + AREA = 1 D1 2 1 DIODE The diode 73 1 0
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Philips 14/02/2002 998.47 Kb TXT docindex-v2.txt
Applicationnotes for Low Vf MEGA Schottky diode / transistor mod Title Date AN10117 AN10117 AN10117 AN10117 1.pdf: Medium Power Transistors EA MEGA 20 1 0 /catalog/appnotes/17620.html Applicationnotes for Damper and modulator diodes Title .html Applicationnotes for Diode Amplifier and Laser Supply Title Date AN96017 AN96017 AN96017 AN96017 1.pdf: Outline diodes Title Date AN10230 AN10230 AN10230 AN10230 1.pdf: The PMEG1020EA PMEG1020EA PMEG1020EA PMEG1020EA and PMEG2010EA PMEG2010EA PMEG2010EA PMEG2010EA MEGA Schottky diodes 2003-04-07 AN10117 AN10117 AN10117 AN10117 1 Applicationnotes for Medium power Schottky diodes Title Date AN10117 AN10117 AN10117 AN10117 1.pdf: Medium Power Transistors and Rectifiers
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Philips 16/06/2005 2589.32 Kb TXT docindex-v1.txt
Da ta B oo k The Programmable Logic Data Book Click anywhere on this page to continue Success made simple 1996 On behalf of the employees of Xilinx, our sales representatives, our distributors, and our manufacturing partners, welcome to our 1996 Data Book, and thank you for your interest in Xilinx products and services. As the inventor of Field Programmable Gate Array technology and the world's leading supplier of programmable logic, we would like to pledge our continuing comm
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Xilinx 07/09/1996 10340.01 Kb ZIP dbookold.zip