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Part Manufacturer Description PDF & SAMPLES
PAM2305CGF180 Diodes Incorporated Switching Regulator, Current-mode, 1A, 1800kHz Switching Freq-Max, PDSO6
AZ1084CS2-5.0TRE1 Diodes Incorporated Fixed Positive LDO Regulator, 5V, 1.5V Dropout, BIPolar, PSSO2, ROHS COMPLIANT, TO-263, 3 PIN
AZ431LBRTR-E1 Diodes Incorporated Two Terminal Voltage Reference, 1 Output, 1.24V, Trim/Adjustable, BIPolar, PSSO3, ROHS COMPLIANT, SOT-89, 3 PIN
DDTB123EU-7-F Diodes Incorporated Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, GREEN, PLASTIC PACKAGE-3
APD260VGTR-E1 Diodes Incorporated Rectifier Diode, Schottky, 1 Phase, 1 Element, 2A, 60V V(RRM), Silicon, DO-15, ROHS COMPLIANT PACKAGE-2
AP7335-25WG-7 Diodes Incorporated Fixed Positive LDO Regulator, 2.5V, 0.2V Dropout, PDSO5, GREEN, SOT-25, 5 PIN

smd diode marking DF

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: Rectifiers SMD Diode Specialist Marking Code Part Number DF2005-G DF201-G DF202-G DF204-G DF206-G DF208-G DF210-G Marking code - DF2005 DF201 DF202 DF204 DF206 DF208 DF210 C + , Comchip Glass Passivated Bridge Rectifiers SMD Diode Specialist DF2005-G Thru. DF210-G Reverse Voltage: 50 to 1000V Forward Current: 2.0A RoHS Device Features DF -Rating to 1000V PRV , Rectifiers SMD Diode Specialist Rating and Characteristics Curves (DF2005-G Thru. DF210-G) FIG.1 - Comchip Technology
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smd DIODE code marking 20A QW-BBR48
Abstract: Rectifiers SMD Diode Specialist Marking Code Part Number DF2005-G DF201-G DF202-G DF204-G DF206-G DF208-G DF210-G Marking code - DF2005 DF201 DF202 DF204 DF206 DF208 DF210 + C DFxxx , Comchip Glass Passivated Bridge Rectifiers SMD Diode Specialist DF2005-G Thru. DF210-G Reverse Voltage: 50 to 1000V Forward Current: 2.0A RoHS Device DF Features -Rating to 1000V PRV , Bridge Rectifiers SMD Diode Specialist Rating and Characteristics Curves (DF2005-G Thru. DF210-G Comchip Technology
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smd code diode 20a
Abstract: ),max (SMD version) ID 25 5.1 50 V m A Type IPD05N03LA G IPF05N03LA G IPS05N03LA G IPU05N03LA G Type IPD05N03LA IPF05N03LA Package IPS05N03LA Ordering Code IPU05N03LA Marking Package , Q67042-S4144 PG-TO252-3-23 Q67042-S Q67042-S4 Q67042-S283 05N03LA Q67042-S4230 Marking 05N03LA 05N03LA , =25 °C2) T C=100 °C Pulsed drain current Avalanche energy, single pulse Reverse diode dv /dt Gate source , min. Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB R thJC R Infineon Technologies
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marking code br 39 SMD smd marking code 321 P-TO252-3-11 PG-TO252-3-11 P-TO252-3-23 P-TO2277 P-TO251-3-21 PG-TO251-3-11
Abstract: DS(on),max ID m 78 SMD version V 11 V DS A · 175 °C operating temperature · , IPB110N06L G Type IPP110N06L G Package Marking Package IPB110N06L G PG-TO263-3-2 P-TO263-3-2 PG-TO220-3-1 110N06L Marking IPP110N06L G 110N06L P-TO220-3-1 110N06L 110N06L Maximum , diode dv /dt dv /dt I D=78 A, V DS=48 V, di /dt =200 A/us, T j,max=175 °C 6 Gate source , characteristics Thermal resistance, junction - case R thJC SMD version, device on PCB R thJA K/W Infineon Technologies
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IEC61249-2-21 IPP110N06L G PG-TO220-3
Abstract: target application 25 V R DS(on),max (SMD version) 5.1 m ID 50 A · N-channel , Ordering Code Marking IPD05N03LA P-TO252-3-11 Q67042-S4144 05N03LA IPF05N03LA Package , Q67042-S4230 IPU05N03LA Marking 05N03LA P-TO251-3-21 05N03LA Q67042-S4230 05N03LA 05N03LA , =25 300 Reverse diode dv /dt dv /dt I D=50 A, V DS=20 V, di /dt =200 A/us, T j,max=175 °C 6 , Thermal characteristics Thermal resistance, junction - case R thJC SMD version, device on PCB R Infineon Technologies
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05n03l 05N03 diode SMD marking code 27 S4230 P-TO252 P-TO251 P-TO251-3-11 Q67042-S4194 Q67042-S4244
Abstract: Avalanche rated · Pb-free lead plating, RoHS compliant Product Summary V DS R DS(on),max ID SMD version , Marking Package P-TO263-3-2 P-TO263-3-2 085N06L P-TO220-3-1 Marking P-TO220-3-1 085N06L 085N06L , diode dv /dt Gate source voltage Power dissipation Operating and storage temperature IEC climatic , SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area3) Electrical , =4.5 V, I D=53 A V GS=10 V, I D=80 A, SMD version V GS=4.5 V, I D=53 A, SMD version Gate resistance Infineon Technologies
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marking D53 IPB085N06L IPP085N06L
Abstract: Avalanche rated · Pb-free lead plating, RoHS compliant Product Summary V DS R DS(on),max ID SMD version , Marking Package P-TO263-3-2 P-TO263-3-2 085N06L P-TO220-3-1 Marking P-TO220-3-1 085N06L 085N06L , diode d v /dt Gate source voltage Power dissipation Operating and storage temperature IEC climatic , SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area3) Electrical , =4.5 V, I D=53 A V GS=10 V, I D=80 A, SMD version V GS=4.5 V, I D=53 A, SMD version Gate resistance Infineon Technologies
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SMD MARKING D80
Abstract: Avalanche rated · Pb-free lead plating, RoHS compliant Product Summary V DS R DS(on),max ID SMD version , Marking Package PG-TO263-3-2 P-TO263-3-2 110N06L P-TO220-3-1 Marking PG-TO220-3-1 110N06L 110N06L , diode d v /dt Gate source voltage Power dissipation Operating and storage temperature IEC climatic , , junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area2) Electrical , =4.5 V, I D=52 A V GS=10 V, I D=78 A, SMD version V GS=4.5 V, I D=52 A, SMD version Gate resistance Infineon Technologies
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marking D78 smd diode marking 78A
Abstract: Product Summary Package V DS Marking · Qualified according to JEDEC1) for target applications 25 V R DS(on),max (SMD version) 3.8 m ID 50 A · N-channel, logic level · , IPU04N03LA Package P-TO252-3-11 P-TO252-3-23 P-TO251-3-11 P-TO251-3-1 Marking 04N03LA , AS I D=45 A, R GS=25 600 Reverse diode dv /dt dv /dt I D=50 A, V DS=20 V, di /dt , case R thJC SMD version, device on PCB R thJA K/W Electrical characteristics, at T j Infineon Technologies
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IPD04N03LA IPF04N03LA IPS04N03LA
Abstract: logic level 60 6.7 ID m 80 SMD version V A · 175 °C operating temperature · , Package Marking IPB070N06L G Package PG-TO263-3 PG-TO263-3 PG-TO220-3 070N06L IPP070N06L G Marking 070N06L PG-TO220-3 070N06L 070N06L Maximum ratings, at T j=25 °C, unless , Avalanche energy, single pulse E AS I D=80 A, R GS=25 450 Reverse diode dv /dt dv /dt I D , , junction - case R thJC SMD version, device on PCB R thJA K/W Electrical characteristics, at Infineon Technologies
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070N0 D53A g2ns PG-TO-220-3
Abstract: Product Summary Package V DS Marking · Qualified according to JEDEC1) for target applications 25 V R DS(on),max (SMD version) 3.8 m ID 50 A · N-channel, logic level · , IPU04N03LA Package P-TO252-3-11 P-TO252-3-23 P-TO251-3-11 P-TO251-3-1 Marking 04N03LA , AS I D=45 A, R GS=25 600 Reverse diode dv /dt dv /dt I D=50 A, V DS=20 V, di /dt , case R thJC SMD version, device on PCB R thJA K/W Electrical characteristics, at T j Infineon Technologies
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04n03l smd marking D50 smd diode marking c3
Abstract: (SMD version) ID 25 5.1 50 V m A Type IPD05N03LA G IPF05N03LA G IPS05N03LA G IPU05N03LA G Type IPD05N03LA IPF05N03LA Package IPS05N03LA Ordering Code IPU05N03LA Marking Package , Q67042-S4144 PG-TO252-3-23 Q67042-S Q67042-S4283 Q67042-S 05N03LA Q67042-S4230 Marking 05N03LA 05N03LA , =25 °C2) T C=100 °C Pulsed drain current Avalanche energy, single pulse Reverse diode d v /dt Gate source , min. Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB R thJC R Infineon Technologies
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p 181 V Q67042-S4277 PG-TO251-3-21 Q67042-S4273 IPS05N03L
Abstract: (on),max ID m 80 SMD version V 6.7 V DS A · 175 °C operating temperature · , IPB070N06L G Type IPP070N06L G Package Marking IPB070N06L G Package PG-TO263-3 PG-TO263-3 PG-TO220-3 070N06L IPP070N06L G Marking 070N06L PG-TO220-3 070N06L 070N06L Maximum ratings , diode dv /dt dv /dt I D=80 A, V DS=48 V, di /dt =200 A/us, T j,max=175 °C 6 Gate source , Thermal resistance, junction - case R thJC SMD version, device on PCB R thJA K/W Electrical Infineon Technologies
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Abstract: (on),max 60 7 ID m 80 SMD version V A · 175 °C operating temperature · , Package Marking IPB070N06L G Package PG-TO263-3 PG-TO263-3 PG-TO220-3 070N06L IPP070N06L G Marking 070N06L PG-TO220-3 070N06L 070N06L Maximum ratings, at T j=25 °C, unless , Avalanche energy, single pulse E AS I D=80 A, R GS=25 450 Reverse diode dv /dt dv /dt I D , R thJC SMD version, device on PCB R thJA K/W Electrical characteristics, at T j=25 °C Infineon Technologies
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DIODE smd marking Ag
Abstract: DS(on),max 60 11 ID m 78 SMD version V A · 175 °C operating temperature · , Package Marking IPB110N06L G Package PG-TO263-3-2 P-TO263-3-2 PG-TO220-3-1 110N06L IPP110N06L G Marking 110N06L P-TO220-3-1 110N06L 110N06L Maximum ratings, at T j=25 °C, unless , Avalanche energy, single pulse E AS I D=78 A, R GS=25 280 Reverse diode dv /dt dv /dt I D , R thJC SMD version, device on PCB R thJA K/W Electrical characteristics, at T j=25 °C Infineon Technologies
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g3pf MARKING G3 INFINEON SMD diode D94
Abstract: logic level 60 11 ID m 78 SMD version V A · 175 °C operating temperature · , Package Marking IPB110N06L G Package PG-TO263-3 P-TO26 PG-TO220-3 110N06L IPP110N06L G Marking 110N06L P-TO220-3-1 110N06L 110N06L Maximum ratings, at T j=25 °C, unless otherwise , energy, single pulse E AS I D=78 A, R GS=25 280 Reverse diode dv /dt dv /dt I D=78 A, V , , junction - case R thJC SMD version, device on PCB R thJA K/W Electrical characteristics, at Infineon Technologies
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smd diode 78a IPP110N PG-TO263 diode smd 312
Abstract: logic level 60 8.2 ID m 80 SMD version V A · 175 °C operating temperature · , Package Marking IPB085N06L G Package PG-TO263-3 P-TO262 PG-TO220-3 085N06L IPP085N06L G Marking 085N06L P-TO220-3-1 085N06L 085N06L Maximum ratings, at T j=25 °C, unless otherwise , energy, single pulse E AS I D=80 A, R GS=25 370 Reverse diode dv /dt dv /dt I D=80 A, V , R thJC SMD version, device on PCB R thJA K/W Electrical characteristics, at T j=25 °C Infineon Technologies
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smd marking g23 marking g23 SMD
Abstract: Product Summary Package V DS Marking â'¢ Qualified according to JEDEC1) for target applications 25 V R DS(on),max (SMD version) 3.8 mâ"¦ ID 50 A â'¢ N-channel, logic level , IPS04N03LA IPU04N03LA Package P-TO252-3-11 P-TO252-3-23 P-TO251-3-11 P-TO251-3-1 Marking , , single pulse E AS I D=45 A, R GS=25 â"¦ 600 Reverse diode dv /dt dv /dt I D=50 A, V DS , resistance, junction - case R thJC SMD version, device on PCB R thJA K/W Electrical Infineon Technologies
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Abstract: Avalanche rated · Pb-free lead plating, RoHS compliant Product Summary V DS R DS(on),max ID SMD version , Marking Package PG-TO263-3 PG-TO263-3 070N06L PG-TO220-3 Marking PG-TO220-3 070N06L 070N06L 070N06L , Conditions ID T C=25 °C1) T C=100 °C Pulsed drain current Avalanche energy, single pulse Reverse diode d v , , junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area3) Electrical , =4.5 V, I D=53 A V GS=10 V, I D=80 A, SMD version V GS=4.5 V, I D=53 A, SMD version Gate resistance Infineon Technologies
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SMD MARKING ASF
Abstract: Avalanche rated · Pb-free lead plating, RoHS compliant Product Summary V DS R DS(on),max ID SMD version , Marking Package PG-TO263-3 PG-TO263-3 070N06L PG-TO220-3 Marking PG-TO220-3 070N06L 070N06L 070N06L , Conditions ID T C=25 °C1) T C=100 °C Pulsed drain current Avalanche energy, single pulse Reverse diode dv /dt , , junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area3) Electrical , =4.5 V, I D=53 A V GS=10 V, I D=80 A, SMD version V GS=4.5 V, I D=53 A, SMD version Gate resistance Infineon Technologies
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