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smd diode marking 77

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Abstract: Diodes SMD Type Schottky Barrier (Double) Diodes BAS70-07 BAS70-07 Unit: mm Features Low forward voltage High breakdown voltage Guard ring protected Small plastic SMD package Low diode capacitance. Absolute Maximum Ratings Ta = 25 MAX Unit continuous reverse voltage Parameter Symbol VR , 0 2 pF VF IR reverse current charge carrier life time (Krakauer method) diode capacitance Test Condition Min Note 1. Pulse test: tp = 300 ms; ä = 0.02. Marking Marking 77 ... Original
datasheet

1 pages,
32.77 Kb

smd marking ms Schottky diode low voltage diode smd 410 BAS70-07 marking 77 smd diode "marking 77" smd diode marking 77 BAS70-07 abstract
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Abstract: * SOD124 Full production order this Reel Pack, SMD product Standard Marking * SOD124 Full production order onlinethis Reel Pack, SMD product Standard Marking * SOD124 Full production order onlinethis Reel Pack, SMD product Standard Marking * SOD124 Full production order onlinethis Reel Pack, SMD product Standard Marking * SOD124 Full production order onlinethis Reel Pack, SMD product Standard Marking * SOD124 Full production order onlinethis Reel Pack, SMD product Standard Marking * SOD124 Full production order onlinethis Reel ... Original
datasheet

13 pages,
163.12 Kb

Zener diode smd marking 36 zener smd diode 101 DIODE smd marking A1 Zener diode smd marking 18 Zener diode smd marking code 14 smd zener diode KB zener diode marking code pm Zener diode smd marking code 39 zener diode c30 Zener diode smd marking 16 C30 DIODE ZENER M3D168 M3D168 abstract
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Abstract: MOSFETs Symbol Conditions Maximum Ratings VDSS TJ = 25°C to 150°C V V 103 77 68 A , IF90 IF110 IF110 TC = 25°C (diode) TC = 90°C (diode) TC = 110°C (diode) Symbol Conditions iv , -optimized intrinsic reverse diode · package: -high level of integration -high current capability 300 A , 1.6 · 2 lead forms available - straight leads (SL) - SMD lead version (SMD) K/W K/W VDS = , dimensions. © 2011 IXYS All rights reserved 20110307 1-3 GWM100-0085X1 GWM100-0085X1 Source-Drain Diode ... Original
datasheet

3 pages,
177.04 Kb

smd diode code S1 smd diode code g3 marking 6 smd bridge diode smd diode code mj IF110 smd diode code S5 GWM100-0085X1 smd diode g5 diode S4 SMD smd diode marking 77 smd diode S6 SMD MARKING g5 GWM100-0085X1 abstract
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Abstract: MOSFETs Symbol Conditions Maximum Ratings VDSS TJ = 25°C to 150°C V V 103 77 68 A , IF90 IF110 IF110 TC = 25°C (diode) TC = 90°C (diode) TC = 110°C (diode) Symbol Conditions iv , -optimized intrinsic reverse diode · package: -high level of integration -high current capability 300 A , 1.6 · 2 lead forms available - straight leads (SL) - SMD lead version (SMD) K/W K/W VDS = , dimensions. © 2009 IXYS All rights reserved 20091006 1-3 GWM100-0085X1 GWM100-0085X1 Source-Drain Diode ... Original
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3 pages,
99.1 Kb

diode marking code 77 smd marking SL SMD mosfet MARKING code TJ diode s1 77 GWM100 g1 smd diode S4 42 DIODE s6 diode SMD MARKING CODE s4 smd diode code g3 SMD MARKING code L1 smd diode marking 77 smd diode MARKING 03A GWM100-0085X1 GWM100-0085X1 abstract
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Abstract: Diodes SMD Type Silicon PIN diode BAP70-02 BAP70-02 SOD-523 +0.05 0.3-0.05 Unit: mm +0.1 , ; f = 1 MHz diode capacitance 270 fF V R = 20 V; f = 1 MHz 250 77 100 IF = 1 , resistor for attenuators +0.1 1.6-0.1 Low diode capacitance 0.77max +0.05 0.1-0.02 0.07max , = 100 MHz; note 1 rD 200 IF = 0.5 mA; f = 100 MHz; note 1 diode forward resistance 1.4 , 100 MHz Note 1. Guaranteed on AQL basis: inspection level S4, AQL 1.0. Marking Marking K8 ... Original
datasheet

1 pages,
30.4 Kb

smd marking rd marking 77 diode MARKING 54 "Pin Diode" diode S4 SMD DIODE marking S4 BAP70-02 marking s4 resistor DIODE marking S4 77 smd diode marking 77 BAP70-02 abstract
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Abstract: Diodes SMD Type Silicon PIN diode BAP70-03 BAP70-03 SOD-323 +0.05 0.85-0.05 +0.05 0.3-0.05 , diode capacitance 270 fF V R = 20V; f = 1 MHz 250 77 100 IF = 1 mA; f = 100 MHz , forattenuators +0.1 2.6-0.1 1.0max Low diode capacitance Very low series inductance. 0.375 +0.05 , mA; f = 100 MHz diode forward resistance 1.4 1.9 when switched from IF = 10 mA to IR = 6 mA , ;measured at IR = 3 mA IF = 100 mA; f = 100 MHz Marking Marking A9 www.kexin.com.cn 1 ... Original
datasheet

1 pages,
30.17 Kb

smd A9 smd transistor marking 03 smd marking rd BAP70-03 diode A9 smd diode marking A9 marking 77 diode A9 transistor SMD transistor marking A9 marking a9 smd diode marking 77 DIODE SMD A9 smd diode a9 BAP70-03 abstract
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Abstract: ever greater performance from continually smaller housings.With the SOD87 SMD diode power package , SOD87 is the best selling SMD diode power package. Philips offers a broad range of rectifier and zener , blocking diode snubber for flyback circuits. Delivering many technical benefits over plastic alternatives , miniature SOD87 SMD glass package can be used in a wider range of demanding, high current, high power , connectors k SOD87 D1 L UNIT Diode Type Voltage Range (V) trr (ns) IO(AV)/ IF ... Original
datasheet

2 pages,
64.03 Kb

DIODE SMD footprint tvs diode sma BZD27 Zener diode smd marking philips zener smd diode "marking 77" sod-87 SOD87 controlled avalanche diode Zener diode smd marking 16 flyback snubber Zener diode smd marking 18 smd diode marking 77 datasheet abstract
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Abstract: BAS116T BAS116T, BAW156T BAW156T, BAV170T BAV170T, BAV199T BAV199T SURFACE MOUNT LOW LEAKAGE DIODE Features NEW PRODUCT · · , Marking: See Diagram Weight: 0.002 grams (approx.) Ordering Information, see Sheet 2 G H K A B C C D G H J K N M L M N J D L All Dimensions in mm BAS116T BAS116T Marking: 50 BAW156T BAW156T Marking: 53 BAV170T BAV170T Marking: 51 BAV199T BAV199T Marking: 52 Maximum Ratings @ TA = 25°C unless , Junction to Ambient Air (Note 1) Operating and Storage Temperature Range Single Diode Double Diode Symbol ... Original
datasheet

8 pages,
168.61 Kb

SMD diode MARKING P2 Marking 52 sot 163 diode smd 410 BAS116T BAW156T BAV170T BAV199T BAS116T abstract
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Abstract: SMD Switching Diode Arrays CDSV6-16-G/4148-G CDSV6-16-G/4148-G Forward Current: 0.15A Reverse Voltage: 75V RoHS , I rr-0 . 1xl R, Rl= 100Q trr 4 nS REV:A QW-B0032 QW-B0032 Page 1 SMD Switching Diode Arrays ELECTRICAL CHARACTERISTIC CURVES (CDSV6-16-G/4148-G CDSV6-16-G/4148-G) COAVCHII» SMD Diodes Specialist Fig. 1 Forward Characteristics , conductance. Marking: KA2 Diagram: FLFLFL H H H 0.044(1.10) 0.035(0.90) 0.014(0.35) 0.006(0.15) coAVCHir SMD Diodes Specialist # SOT-363 0.087(2.20) 0.071(1.80) n n n 0.053(1.35) 0.045(1.15 ... OCR Scan
datasheet

2 pages,
46.38 Kb

smd diode marking 77 smd diode arrays KA2 DIODE smd ka2 smd ka2 diode CDSV6-16-G/4148-G CDSV6-16-G/4148-G abstract
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Abstract: Twin Diode Schottky Barrier Diode mtm® OUTLINE Package : E-pack Unit^mm W eight 0.326g (Typ) DE10SC3L DE10SC3L 30 V 10A Feature · SMD · Tj=150°C · , 9 n 7-WMVtM i > For details of the outline dimensions, refer to our web site or the diode technical data book. As for the marking, refer to the specification "Marking, Terminal Connection". I ... OCR Scan
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2 pages,
702.88 Kb

RW marking SMD diode TSA smd diode "marking 77" smd diode marking LM datasheet abstract
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voltage suppressor 25-May-99 Product Specification 12 77 Open Products, packages, availability and ordering Partnumber Order code (12nc) marking/packing package device status buy online BZA462A BZA462A BZA462A BZA462A 9340 548 22115 Standard marking * reel pack, SMD Monolithic transient voltage suppressor diode in a six lead SOT457 (SC-74 SC-74 SC-74 SC-74) package for 4-bit wide ESD
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Philips 01/02/2000 26.99 Kb HTML bza462a.html
No abstract text available
www.datasheetarchive.com/download/70932984-16612ZD/content.xml
Epcos 22/10/2002 500.99 Kb XML content.xml
Outlines - Discrete & RF Semiconductors" "EH_DB_6" FILE "Marking Codes - Discrete & RF Semiconductors" CALL "IGBT-Transistors @3612" CALL "FRED-Diodes @3613" CALL "Duo-Pack (IGBT + antiparallel Diode FILE "BUZ 77 A" "BUZ77a" FILE "BUZ 77 B" "buz77b" FILE "BUZ 78" "buz78" FILE "BUZ 80" "buz80" FILE
www.datasheetarchive.com/files/siemens/setup/hlmenu.def
Siemens 27/02/1997 84.6 Kb DEF hlmenu.def
"Package Outlines" "EH_DB_6" FILE "Marking Codes" "EH_DB_9a" END MENUE "Power Semiconductors @36" CALL CALL "IGBT-Transistors @3612" CALL "FRED-Diodes @3613" CALL "Duo-Pack (IGBT + antiparallel Diode /A" "BUZ74 BUZ74 BUZ74 BUZ74" FILE "BUZ 76 /A" "BUZ76 BUZ76 BUZ76 BUZ76" FILE "BUZ 77 A /B" "BUZ77A BUZ77A BUZ77A BUZ77A" FILE "BUZ 78" "BUZ78 BUZ78 BUZ78 BUZ78" FILE "BUZ
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Siemens 28/10/1996 79.18 Kb DEF hlmenu-v1.def
UZZ9001 UZZ9001 UZZ9001 UZZ9001 77 1 0 /catalog/appnotes/28122.html Applicationnotes for Passenger restraint systems Title Date Applicationnotes for Zener diodes Title Date AN ZENBLOCK: Zenblock : integrated zener and blocking diode 1999-03-09 diodes Title Date AN ZENBLOCK: Zenblock : integrated zener and blocking diode 1999-03-09 157 1 0 /catalog
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Philips 25/04/2003 954.24 Kb TXT docindex.txt
CHARACTERISTICS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 77 . . . . . 77 11.7.2Absolute Electrical Sensitivity . . . . . . . . . . . . . . . . . . . . . . .
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/5266-v3.htm
STMicroelectronics 30/06/2000 187.45 Kb HTM 5266-v3.htm
CHARACTERISTICS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 77 . . . . . 77 11.7.2Absolute Electrical Sensitivity . . . . . . . . . . . . . . . . . . . . . . .
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STMicroelectronics 20/10/2000 195.34 Kb HTM 5266-v1.htm
true open drain I/O (P-Buffer and protection diode to V DD are not implemented). See Section 11 "I/O
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STMicroelectronics 20/10/2000 273.03 Kb HTM 6816-v1.htm
protection diode to V DD are not implemented). See Section 10 "I/O PORTS" on page 30 and Section 14.8 "I
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STMicroelectronics 29/01/2001 261.18 Kb HTM 6815-v3.htm
protection diode to V DD are not implemented). See Section 10 "I/O PORTS" on page 28 and Section 14.8 "I/O
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STMicroelectronics 20/10/2000 257.91 Kb HTM 6815-v1.htm