500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Top Results

Part Manufacturer Description Datasheet BUY
ISL99125BDRZ-T Intersil Corporation 25A DrMOS Module with Diode Emulation and PS4; QFN24; Temp Range: 0° to 70° visit Intersil
ISL99135BDRZ-T Intersil Corporation 35A DrMOS Module with Diode Emulation and PS4; QFN24; Temp Range: 0° to 70° visit Intersil
TPD4E004DSFR Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD3E001DRY Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
ISL58315CRTZ Intersil Corporation High Speed Triple Laser Diode Drivers; TQFN40; Temp Range: 0° to 70° visit Intersil Buy
ISL58315CRTZ-T13 Intersil Corporation High Speed Triple Laser Diode Drivers; TQFN40; Temp Range: 0° to 70° visit Intersil Buy

smd diode marking 77

Catalog Datasheet MFG & Type PDF Document Tags

BAV119

Abstract: SMD DIODE MARKING A1 SOD123 BAS116T, BAW156T, BAV170T, BAV199T SURFACE MOUNT LOW LEAKAGE DIODE Features NEW PRODUCT · · , Marking: See Diagram Weight: 0.002 grams (approx.) Ordering Information, see Sheet 2 G H K A B C C D G H J K N M L M N J D L All Dimensions in mm BAS116T Marking: 50 BAW156T Marking: 53 BAV170T Marking: 51 BAV199T Marking: 52 Maximum Ratings @ TA = 25°C unless , Junction to Ambient Air (Note 1) Operating and Storage Temperature Range Single Diode Double Diode Symbol
Diodes
Original
BAV119 SMD DIODE MARKING A1 SOD123 smd part marking b1 sot SMD diode MARKING P2 diode smd 410 smd marking 5K MIL-STD-202 AP02007

GBJ2510

Abstract: smd diode marking 77 Technology CO., LTD. Comchip Glass Passivated Bridge Rectifiers SMD Diode Specialist Marking Code , Comchip Glass Passivated Bridge Rectifiers SMD Diode Specialist GBJ25005-G Thru. GBJ2510-G , Bridge Rectifiers SMD Diode Specialist Rating and Characteristics Curves (GBJ25005-G Thru , QW-BBR60 Page 3 Comchip Glass Passivated Bridge Rectifiers SMD Diode Specialist GBJ25005 , ) 0.098(2.5) 0.031(0.8) 0.023(0.6) 0.402(10.2) 0.303(7.7) 0.303(7.7) SPACING 0.386(9.8) 0.287(7.3
Comchip Technology
Original
GBJ2510 smd diode marking 77 94-V0 25005-G 2501-G 2502-G 2504-G 2506-G

smd diode marking 77

Abstract: smd diode "marking 77" Diodes SMD Type Schottky Barrier (Double) Diodes BAS70-07 Unit: mm Features Low forward voltage High breakdown voltage Guard ring protected Small plastic SMD package Low diode capacitance. Absolute Maximum Ratings Ta = 25 MAX Unit continuous reverse voltage Parameter Symbol VR , 0 2 pF VF IR reverse current charge carrier life time (Krakauer method) diode capacitance Test Condition Min Note 1. Pulse test: tp = 300 ms; ä = 0.02. Marking Marking 77
Kexin
Original
smd diode "marking 77" marking 77 smd marking ms Schottky diode low voltage

philips zener diode c24

Abstract: Zener diode smd marking code .18 * SOD124 Full production order this Reel Pack, SMD product Standard Marking * SOD124 Full production order onlinethis Reel Pack, SMD product Standard Marking * SOD124 Full production order onlinethis Reel Pack, SMD product Standard Marking * SOD124 Full production order onlinethis Reel Pack, SMD product Standard Marking * SOD124 Full production order onlinethis Reel Pack, SMD product Standard Marking * SOD124 Full production order onlinethis Reel Pack, SMD product Standard Marking * SOD124 Full production order onlinethis Reel
Philips Semiconductors
Original
philips zener diode c24 Zener diode smd marking code .18 C30 DIODE ZENER DIODE ZENER smd marking 72 Zener diode smd marking 22 iz c220 zener diode M3D168 BZG01 DO-214AC MBL143 HTML04232003/BZG01-C10

smd diode g6 DIODE S4 39 smd diode

Abstract: S4 42 DIODE = 25°C (diode) TC = 90°C (diode) TC = 110°C (diode) Symbol Conditions A A A tbd tbd tbd TC = 25°C TC = 90°C TC = 110°C A A A iv ID25 ID90 ID110 V 103 77 , optimized intrinsic reverse diode â'¢ package: - high level of integration - high current capability 300 , equipment e Symbol 1.3 1.0 1.6 â'¢ 2 lead forms available - straight leads (SL) - SMD lead version (SMD) K/W K/W VDS = ID·(RDS(on) + RPin to Chip) IXYS reserves the right to change
IXYS
Original
smd diode g6 DIODE S4 39 smd diode S4 42 DIODE smd diode S4 28 DIODE S4 37 GWM100-0085X1 IF110 100-0085X1-SL 100-0085X1-SMD 100-0085X1

Diode smd s6 68

Abstract: S4 42 DIODE MOSFETs Symbol Conditions Maximum Ratings VDSS TJ = 25°C to 150°C V V 103 77 68 A , IF90 IF110 TC = 25°C (diode) TC = 90°C (diode) TC = 110°C (diode) Symbol Conditions iv , -optimized intrinsic reverse diode · package: -high level of integration -high current capability 300 A , 1.6 · 2 lead forms available - straight leads (SL) - SMD lead version (SMD) K/W K/W VDS = , dimensions. © 2009 IXYS All rights reserved 20091006 1-3 GWM100-0085X1 Source-Drain Diode
IXYS
Original
Diode smd s6 68 DIODE marking S6 77 smd diode g6 smd diode S6 S3 marking DIODE smd diode sl 100-085X1-SL 100-085X1-SMD

S4 42 DIODE

Abstract: smd diode S6 Part Name & Packing Unit Marking GWM 100-0085X1 - SL GWM 100-0085X1 - SMD iv 5 ±0,05 0,5 ±0,02 R1 , Symbol TC = 25°C TC = 90°C TC = 110°C TC = 25°C (diode) TC = 90°C (diode) TC = 110°C (diode) Conditions Conditions TJ = 25°C to 150°C Maximum Ratings 85 ± 20 103 77 68 tbd tbd tbd V V A A A A A A Applications , : -low RDSon -optimized intrinsic reverse diode · package: -high level of integration -high current , 2 lead forms available - straight leads (SL) - SMD lead version (SMD) (TJ = 25°C, unless
IXYS
Original
smd diode code g3 SMD SL smd diode code g2 smd diode code g4

SMD MARKING QG 6 PIN

Abstract: smd diode code g4 MOSFETs Symbol Conditions Maximum Ratings VDSS TJ = 25°C to 150°C V V 103 77 68 A , IF90 IF110 TC = 25°C (diode) TC = 90°C (diode) TC = 110°C (diode) Symbol Conditions iv , -optimized intrinsic reverse diode · package: -high level of integration -high current capability 300 A , 1.6 · 2 lead forms available - straight leads (SL) - SMD lead version (SMD) K/W K/W VDS = , dimensions. © 2011 IXYS All rights reserved 20110307 1-3 GWM100-0085X1 Source-Drain Diode
IXYS
Original
SMD MARKING QG 6 PIN SMD DIODE DEVICE sl smd marking SL All smd diode marking SMD diode NC smd diode l2

3N0609

Abstract: smd diode marking 77 R DS(on) V GS=10 V, I D=39 A - 7.7 9.1 m V GS=10 V, I D=39 A, SMD version - , Features V DS 8.8 m ID · Automotive AEC Q101 qualified V R DS(on),max (SMD version) · N-channel - Enhancement mode 55 77 A · MSL1 up to 260°C peak reflow · 175°C operating , Marking IPB77N06S3-09 PG-TO263-3-2 SP0000-88715 3N0609 IPI77N06S3-09 PG-TO262 , ) ID T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2) Value 77 Unit A 55 Pulsed drain
Infineon Technologies
Original
IPP77N06S3-09 smd diode 77a SMD MARKING Asf marking code br 39 SMD marking CODE R SMD DIODE TRANSISTOR SMD MARKING CODE ag PG-TO262-3-1 PG-TO220-3-1 EIA/JESD22-A114-B SP0000-88716 SP0000-88717

2n0612

Abstract: smd diode marking 77 D=77 A, V GS=0 to 10 V nC Reverse Diode Diode continous forward current2) IS Diode pulse current2) I S,pulse Diode forward voltage V SD V GS=0 V, I F=77 A, T j=25 °C - , · N-channel - Enhancement mode 55 R DS(on),max (SMD version) · Automotive AEC Q101 qualified ID 11.7 77 V m A · MSL1 up to 260°C peak reflow · 175°C operating temperature , Type Package Ordering Code Marking IPB77N06S2-12 PG-TO263-3-2 SP0002-18173 2N0612
Infineon Technologies
Original
IPP77N06S2-12 SP0002-18172 ANPS071E infineon 2n0612 D-81541

3N0609

Abstract: 3n06 DS 55 V R DS(on),max (SMD version) 8.8 m ID 77 A Features · N-channel - , % Avalanche tested Type Package Marking IPB77N06S3-09 PG-TO263-3-2 3N0609 IPI77N06S3 , =10 V T C=100 °C, V GS=10 V2) Value 77 Unit A 55 Pulsed drain current1) I D,pulse , current, single pulse I AS 77 A Gate source voltage2) V GS ±20 V Power dissipation , 1.4 Thermal resistance, junction ambient, leaded R thJA - - 62 SMD version, device
Infineon Technologies
Original
3n06 3N060 diode marking code 77

CZRH584C27-G

Abstract: CZRH584C10-G Comchip Technology CO., LTD. SMD Zener Diode Marking Code Part Number Marking Code , SMD Zener Diode CZRH584C2V4-G Thru CZRH584C51-G Voltage: 2.4 to 51 Volts Power: 200 mWatts , QW-BZ025 Page 1 Comchip Technology CO., LTD. SMD Zener Diode Electrical Characteristics (at Ta , QW-BZ025 Comchip Technology CO., LTD. SMD Zener Diode RATING AND CHARACTERISTIC CURVES , QW-BZ025 Comchip Technology CO., LTD. SMD Zener Diode Reel Taping Specification P1 P0 d
Comchip Technology
Original
CZRH584C27-G CZRH584C10-G zener diode SMD marking code 92 MIL-STD-750
Abstract: QW-BZ025 Comchip Technology CO., LTD. Page 4 SMD Zener Diode Marking Code Part Number Marking , SMD Zener Diode CZRH584C2V4-G Thru CZRH584C51-G Voltage: 2.4 to 51 Volts Power: 200 mWatts , without notice. REV: A QW-BZ025 Page 1 Comchip Technology CO., LTD. SMD Zener Diode , notice. QW-BZ025 Comchip Technology CO., LTD. REV: A Page 2 SMD Zener Diode RATING AND , ) REV: A QW-BZ025 Comchip Technology CO., LTD. Page 3 SMD Zener Diode Reel Taping Comchip Technology
Original

smd ka2 diode

Abstract: smd ka2 SMD Switching Diode Arrays CDSV6-16-G/4148-G Forward Current: 0.15A Reverse Voltage: 75V RoHS , . Marking: KA2 Diagram: FLFLFL H H H 0.044(1.10) 0.035(0.90) 0.014(0.35) 0.006(0.15) coAVCHir SMD , nS REV:A QW-B0032 Page 1 SMD Switching Diode Arrays ELECTRICAL CHARACTERISTIC CURVES (CDSV6-16-G/4148-G) COAVCHII» SMD Diodes Specialist Fig. 1 Forward Characteristics Fig.2 Reverse , â'¢y fIf / â  / fffl ,Ta=25°C f j /¡I f Ji 77 / // f / Ta-40°C / ' /ji
-
OCR Scan
smd ka2 diode smd ka2 KA2 DIODE smd diode arrays
Abstract: MOSFET IC SMD Type P-Channel Enhancement Mode MOSFET SI9435DY â  Features ● 5.3 A, -30 , . www.kexin.com.cn 1 MOSFET IC SMD Type SI9435DY â  Electrical Characteristics Ta = 25â"ƒ Parameter , Transfer Capacitance Crss 77 pF Turn-On Delay Time td(on) VDD =-15 V, ID = -1 A, 7 , Gate-Drain Charge Qgd 4.8 nC Maximum Continuous Drain-Source Diode Forward Current Drainâ'"Source Diode Forward Voltage IS VSD * Pulse Test: Pulse Width ï¼300μs, Duty Cycle ï¼ 2.0% â Kexin
Original

Zener diode smd marking code 51 y

Abstract: Formosa MS SMD Zener Diode MM5Z2V4 THRU MM5Z75V List List , 2009/08/10 Revised Date 2012/12/26 Revision Page. E 8 Formosa MS SMD Zener Diode , Formosa MS SMD Zener Diode MM5Z2V4 THRU MM5Z75V Electrical characteristics (at T =25 C unless , Formosa MS SMD Zener Diode MM5Z2V4 THRU MM5Z75V Packing information P0 P1 d E F B A W , 2009/08/10 Revised Date 2012/12/26 Revision Page. E 8 Formosa MS SMD Zener Diode
Formosa MS
Original
Zener diode smd marking code 51 y DS-221739 MIL-STD-750D METHOD-2031 MIL-STD-202F METHOD-208 METHOD-1038

s/ksmh12/2.27/30/KI9435DY

Abstract: 9435 ic MOSFET IC SMD Type P-Channel Enhancement Mode MOSFET KI9435DY â  Features ● 5.3 A , . www.kexin.com.cn 1 IC MOSFET SMD Type KI9435DY â  Electrical Characteristics Ta = 25â"ƒ Parameter , , 690 pF f = 1.0 MHz 306 pF 77 pF Output Capacitance Coss Reverse Transfer , Gate-Drain Charge Qgd 4.8 nC Maximum Continuous Drain-Source Diode Forward Current Drainâ'"Source Diode Forward Voltage IS VSD * Pulse Test: Pulse Width ï¼300μs, Duty Cycle ï¼ 2.0% â
Kexin
Original
s/ksmh12/2.27/30/KI9435DY 9435 ic mosfet 9435

smd diode marking 77

Abstract: BAT68-04 Diodes SMD Type Silicon Schottky Diode BAT68;BAT68-04 BAT68-05;BAT68-06 SOT-23 Unit: mm , -04 BAT68-05 BAT68-06 Marking 2 BAT68 83s 84s 85s 86s www.kexin.com.cn A 500 Diode capacitance Marking Unit V VR = 1 V IR Max mV pF Kexin , T s tg -5 5 to + 1 5 0 T o ta l p o w e r d is s ip a tio n BAT68, TS 77 B A T 6 8 -0 4 , T h e rm a l R e s is ta n c e www.kexin.com.cn 1 Diodes SMD Type BAT68;BAT68
Kexin
Original

smd y6 sot-23

Abstract: Zener diode smd marking z2 sot SMD Zener Diode SMD Diodes Specialist CZRT55C2V4-GThru CZRT55C39-G Voltage: 2.4 to 39 Volts , QW-BZ014 Page 1 SMD Zener Diode SMD Diodes Specialist Electrical Characteristics(Ta = 25 , 27.3 Y14 REV:B QW-BZ014 Page 2 SMD Zener Diode SMD Diodes Specialist RATING AND , 40 0 10 100 Nominal Zener Voltage , (V) REV:B QW-BZ014 Page 3 SMD Zener Diode , 0.315 + 0.012 /â'"0.004 0.374 ± 0.039 REV:B QW-BZ014 Page 4 SMD Zener Diode SMD Diodes
Comchip Technology
Original
smd y6 sot-23 Zener diode smd marking z2 sot diode ZENER y8 sot23 smd diode SOT-23 marking code Y4 SMD zener diode 202 Y5 smd zener CZRT55C2V4-GT MIL-STD202G

transistor 8BB smd

Abstract: smd diode marking 3fs Inverse diode continuous forward current 7"c = 25 X Is â  77 A Inverse diode direct current,pulsed Tc = , Drain-Source on-state resistance ñDS(on) 0.015 Ã2 Continuous drain current b 77 A Type Package Ordering , otherwise specified Parameter Symbol Value Unit Continuous drain current Tc = 25 -C Tc = 100 °C ID 77 55 A Pulsed drain current Tc = 25 °C /Dpulse 308 Avalanche energy, single pulse lD = 77 A, Vqq = 25 V, Rqs = 25 Q ÉAS 380 mJ Avalanche energy, periodic limited by 7]max ^AR 17 Reverse diode dy/di
-
OCR Scan
BUZ100S Q67040-S4001-A2 E3045 transistor 8BB smd smd diode marking 3fs transistor marking smd 7c smd code book B3 transistor smd DIODE 3FS P-T0220-3-1 E3045A P-T0263-3-2 Q67040-S4001-A6
Showing first 20 results.