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ISL99135BDRZ-T Intersil Corporation 35A DrMOS Module with Diode Emulation and PS4; 16; Temp Range: 0° to 70° visit Intersil
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smd diode j

Catalog Datasheet MFG & Type PDF Document Tags

SLAU265

Abstract: MSP430Fxx Transistors with Bias Res. SOT-363 (OnSemi) R1 Resistor MCR01 MZP J 221 1 SMD Chip Res 220 Ohm , MCR01 MZP J 334 1 SMD Chip Res 330 k Ohm 5% 1/16W 0402 R7 Resistor MCR01 MZP J 151 1 SMD Chip Res 150 Ohm 5% 1/16W 0402 R8 Resistor MCR01 MZP J 223 1 SMD Chip Res 22kOhm 5% 1/16W 0402 R9 Resistor MCR01 MZP J 223 1 SMD Chip Res 22kOhm 5% 1/16W 0402 R10 , Ohm 1% 1/16W 0402 R14 Resistor MCR01 MZP J 221 1 SMD Chip Res 220 Ohm 5% 1/16W 0402
Elprotronic
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SLAU265 MSP430Fxx mzp a 100 45 16 SMD transistor code NC CL05B 1003 smd resistor REP430F MSP430 PM041A01 TPS7201QD MSP430F5437IPN TQFP-80

SMD diode NC

Abstract: 74 HC 00 smd Width Limited By T j Max SMD 2001 500 500 13 8.0 52 SMD 2002 450 450 13 8.0 52 ±20 SMD 2003 500 , CHARACTERISTICS JS Continuous Source Current (Body Diode) SMD 2001 SMD 2002 SMD 2003 SMD 2004 !s m Pulse source , ?-// SMD 2001 N-Channel Power MOSFETs, IN HERMETIC ISOLATED TO -254AA PACKAGE Ideally suited for , high energy pulse circuits. FEATURES Q U IC K REFERENCE D ATA SMD 2003 sm dhxm Part Number SMD 2001 SMD 2002 SMD 2003 SMD 2004 V DS 500V 450V 500V 450V RDS(on) 0.4Q 0.4Q 0.5Q . 0.5Q. to
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OCR Scan
SMD diode NC 74 HC 00 smd 2003 SMD IC TO-254AA Package SMD 2002 smd js t D0D52S3 SM883

SMD diode NC

Abstract: 4001 diode reverse P-N junction rectifier. I sm Pulse Source Current SMD 4001 52 A - - (Body Diode)1 SMD 4002 SMD 4003 A 48 - - SMD 4004 V sd SMD 4001 Diode Forward Voltage1 1.4 V Tc=25°C , I s = 13A, V gs = 0V - , energy pulse circuits. SMD SMD SMD SMD 4001 4002 4003 4004 QUICK REFERENCE DATA (PER FET) Part Number SMD 4001 SMD 4002 SMD 4003 SMD 4004 V ds RDS(on) Id FEATURES · · · · · · Fast switching Low , ) Gate-Source Voltage Operating Junction and Storage Temperature Range Lead Temperature ® T j = 25°C to 150
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OCR Scan
4001 diode 4002 diode smd diode Uj 4001 smd diode IN 4004 smd diode y3 13T13T
Abstract: Formosa MS SMD Switching Diode BAS16W/BAV70W/BAW56W/BAV99W/BAL99W List List , Date 2010/07/10 Revision C Page. 8 Formosa MS SMD Switching Diode BAS16W/BAV70W , Date 2010/07/10 Revision C Page. 8 Formosa MS SMD Switching Diode BAS16W/BAV70W , 2008/02/10 Revised Date 2010/07/10 Revision C Page. 8 Formosa MS SMD Switching Diode , Formosa MS SMD Switching Diode BAS16W/BAV70W/BAW56W/BAV99W/BAL99W Reel packing PACKAGE SOT Formosa MS
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DS-221914 MIL-STD-750D METHOD-2031 MIL-STD-202F METHOD-208 METHOD-1038

ComChip Date code

Abstract: diode marking code 98 Supper Low Capacitance SMD ESD Protection Diode CPDQ5V0USP-HF RoHS Device Halogen Free , Page 1 Comchip Technology CO., LTD. Supper Low Capacitance SMD ESD Protection Diode RATING AND , Page 2 QW-JP033 Comchip Technology CO., LTD. Supper Low Capacitance SMD ESD Protection Diode Comchip SMD Diode Specialist Reel Taping Specification d P0 P1 T E F W B A C , Technology CO., LTD. Supper Low Capacitance SMD ESD Protection Diode Comchip SMD Diode Specialist
Comchip Technology
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ComChip Date code diode marking code 98 SMD MARKING code ta 0402/SOD-923F IEC61000-4-2 MIL-STD-750 0402/SOD-923

smd diode green BAND

Abstract: 1N4148WS SMD Switching Diode 1N4148WS-FL List Formosa MS List , 2011/08/12 Revision B Page. 7 Page 1 DS-221954 SMD Switching Diode 1N4148WS , 2011/08/12 Revision B Page. 7 Page 3 DS-221954 SMD Switching Diode 1N4148WS , Page 5 DS-221954 SMD Switching Diode 1N4148WS-FL Reel packing PACKAGE MARKING CODE A2 S1 , B Page. 7 Page 6 DS-221954 SMD Switching Diode 1N4148WS-FL High reliability test
Formosa MS
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smd diode green BAND A2 DIODE SMD CODE MARKING marking code a2 SMD diode smd diode sod-123 marking code a2 smd diode sod marking code a2 METHOD-1027 METHOD-1036 JESD22-A102 METHOD-1051 METHOD-1056 METHOD-4066-2

4N03L04

Abstract: iPP80n03S4L-04 -03 IPI80N03S4L-04, IPP80N03S4L-04 5 Typ. output characteristics I D = f(V DS); T j = 25 °C, SMD parameter: V GS 320 10 V 5V 4.5 V 6 Typ. drain-source on-state resistance R DS(on) = f(I D); T j = 25 °C, SMD , °C 25 °C 8 Typ. drain-source on-state resistance R DS(on) = f(T j); I D = 80 A; V GS = 10 V, SMD , forward diode characteristicis IF = f(VSD) parameter: T j 103 12 Typ. avalanche characteristics I A S , DS R DS(on),max (SMD version) ID 30 3.3 80 PG-TO262-3-1 V m A Features · N-channel - Enhancement
Infineon Technologies
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4N03L03 4N03L04 4n03 IPB80N03S4L-03 PG-TO263-3-2 PG-TO220-3-1

4P03L04

Abstract: 4p03 D = f(V DS); T j = 25 °C; SMD R DS(on) = (I D); T j = 25 °C; SMD parameter: V GS parameter , ; SMD parameter: T j 320 6 25 °C -55 °C 175 °C 5 R DS(on) [m] -I D [A] 240 , V DS -30 V R DS(on) (SMD Version) 4.1 m ID -80 A Features · P-channel - , -3-1 4P03L04 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Continuous , Operating and storage temperature T j, T stg - -55 . +175 °C IEC climatic category; DIN IEC
Infineon Technologies
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IPB80P03P4L-04 IPI80P03P4L-04 IPP80P03P4L-04 4p03 146a marking diode DIODE smd marking Ag

3N10L12

Abstract: IPB70N10S3L-12 D = f(V DS); T j = 25 °C; SMD R DS(on) = f(I D); T j = 25 °C; SMD parameter: V GS parameter , resistance I D = f(V GS); V DS = 6V R DS(on) = f(T j); I D = 50 A; V GS = 10 V; SMD parameter: T j , 15 20 25 30 V DS [V] T j [°C] 11 Typical forward diode characteristicis 12 Typ , DS V R DS(on),max (SMD version) 12 m ID Features 100 70 A PG-TO263 , -12 PG-TO262-3-1 3N10L12 IPP70N10S3L-12 PG-TO220-3-1 3N10L12 Maximum ratings, at T j=25 °C
Infineon Technologies
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IPB70N10S3L-12 IPI70N10S3L-12 DIODE smd marking v1 3N10L

4N03L03

Abstract: 4N03L02 ,pulse Diode forward voltage V SD V GS=0 V, I F=80 A, T j=25 °C Reverse recovery time2) t , resistance I D = f(V DS); T j = 25 °C; SMD R DS(on) = f(I D); T j = 25 °C; SMD parameter: V GS , ); V DS = 6V R DS(on) = f(T j); I D = 80 A; V GS = 10 V; SMD parameter: T j 3.5 350 -55 °C , 180 5 10 15 20 25 30 V DS [V] T j [°C] 11 Typical forward diode , V DS V R DS(on),max (SMD version) 2.4 m ID Features 30 80 A PG-TO263
Infineon Technologies
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IPB80N03S4L-02 IPI80N03S4L-03 IPP80N03S4L-03 4N03L02 C25 smd ANPS071E

4N03L15

Abstract: DIODE smd marking Ag ) I S,pulse Diode forward voltage V SD V GS=0 V, I F=22 A, T j=25 °C Reverse recovery , D = f(V DS); T j = 25 °C, SMD R DS(on) = f(I D); T j = 25 °C, SMD parameter: V GS parameter , ) = f(T j); I D = 22 A; V GS = 10 V, SMD parameter: T j 80 22 -55 °C 25 °C 20 175 °C , 15 20 25 30 V DS [V] T j [°C] 11 Typical forward diode characteristicis 12 Typ , V DS 30 R DS(on),max (SMD version) 14.6 ID Features PG-TO263-3-2 · N-channel -
Infineon Technologies
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IPB22N03S4L-15 IPI22N03S4L-15 IPP22N03S4L-15 4N03L15 diode smd marking T2

4N06L04

Abstract: IPI90N06S4L-04 pulse current2) I S,pulse Diode forward voltage V SD V GS=0V, I F=90A, T j=25°C 0.6 , . drain-source on-state resistance I D = f(V DS); T j = 25 °C; SMD R DS(on) = f(I D); T j = 25 °C; SMD , resistance I D = f(V GS); V DS = 6V R DS(on) = f(T j); I D = 90 A; V GS = 10 V; SMD parameter: T j , [V] T j [°C] 11 Typical forward diode characteristicis 12 Avalanche characteristics IF = , V DS 60 V R DS(on),max (SMD version) 3.4 m ID 90 A Features · N-channel
Infineon Technologies
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IPB90N06S4L-04 IPI90N06S4L-04 IPP90N06S4L-04 4N06L04 t 04 27 smd c2804

4N06L08

Abstract: smd8050 Diode pulse current2) I S,pulse Diode forward voltage V SD V GS=0V, I F=45A, T j , . drain-source on-state resistance I D = f(V DS); T j = 25 °C; SMD R DS(on) = f(I D); T j = 25 °C; SMD , I D = f(V GS); V DS = 6V R DS(on) = f(T j); I D = 45 A; V GS = 10 V; SMD parameter: T j 180 , V DS 60 V R DS(on),max (SMD version) 7.9 m ID 45 A Features · N-channel , -08 PG-TO262-3-1 4N06L08 IPP45N06S4L-08 PG-TO220-3-1 4N06L08 Maximum ratings, at T j=25 °C
Infineon Technologies
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IPB45N06S4L-08 IPI45N06S4L-08 smd8050 C12140 71A marking

4n04l04

Abstract: IPB80N04S4L-04 characteristics 6 Typ. drain-source on-state resistance I D = f(V DS); T j = 25 °C; SMD R DS(on) = f(I D); T j = 25 °C; SMD parameter: V GS parameter: V GS 15 300 10 V 5V 13 4.5 V 240 , f(V GS); V DS = 6V R DS(on) = f(T j); I D = 80 A; V GS = 10 V; SMD parameter: T j 6.5 240 , 0 180 5 10 15 20 25 30 V DS [V] T j [°C] 11 Typical forward diode , V DS V R DS(on),max (SMD version) 4.0 m ID Features 40 80 A PG-TO263
Infineon Technologies
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IPB80N04S4L-04 IPI80N04S4L-04 4n04l04 IPP80N04S4L-04 4N04L04

4P04L06

Abstract: smd diode 104 IPB80P04P4L-06 IPI80P04P4L-06, IPP80P04P4L-06 5 Typ. output characteristics I D = f(V DS); T j = 25 °C; SMD parameter: V GS 320 -10V -5V 6 Typ. drain-source on-state resistance R DS(on) = (I D); T j = 25 °C; SMD , forward diode characteristicis IF = f(VSD) parameter: T j 103 12 Drain-source breakdown voltage V BR , Product Summary V DS R DS(on) (SMD Version) ID -40 6.4 -80 V mW A Features · P-channel - Logic Level - , 4P04L06 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current1
Infineon Technologies
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smd diode 104 smd diode UM 08 smd diode marking DD

4P04L08

Abstract: IPP70P04P4L-08 -08 IPI80P04P4L-08, IPP80P04P4L-08 5 Typ. output characteristics I D = f(V DS); T j = 25 °C; SMD parameter: V GS 320 -10V 6 Typ. drain-source on-state resistance R DS(on) = (I D); T j = 25 °C; SMD parameter: V , °C 8 Typ. drain-source on-state resistance R DS(on) = f(T j); I D = -80 A; V GS = -10 V; SMD 10 , 15 20 25 30 35 40 T j [°C] -V DS [V] 11 Typical forward diode characteristicis IF = f(VSD , DS R DS(on) (SMD Version) ID -40 7.9 -80 V mW A Features · P-channel - Logic Level - Enhancement
Infineon Technologies
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IPP70P04P4L-08 4P04L08 IPB80P04P4L-08 IPB70P04P4L-08 IPI70P04P4L-08

smd diode marking jc sot23

Abstract: SMD Switching Diode BAL99/BAV99/BAW56/BAV70 Formosa MS List List , -221906 2008/02/10 2010/11/29 C Page. 8 Formosa MS SMD Switching Diode BAL99/BAV99/BAW56 , R = 70V, T J =150 OC)BAV70 V 2.5 30 60 50 100 IR Diode Capacition(V R = 0V, f = 1.0MHz , . 8 Formosa MS SMD Switching Diode BAL99/BAV99/BAW56/BAV70 Pinning information Type number , Revision DS-221906 2008/02/10 2010/11/29 C Page. 8 Formosa MS SMD Switching Diode
Formosa MS
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smd diode marking jc sot23 METHOD-1021 METHOD-1031

4p03L11

Abstract: 4p03l . output characteristics 6 Typ. drain-source on-state resistance I D = f(V DS); T j = 25°C; SMD R DS(on) = (I D); T j = 25°C; SMD parameter: V GS parameter: V GS 20 180 -4.0V -10 V , =-45A; V GS = -10V; SMD parameter: T j 180 -55 °C 14 25 °C 175 °C 160 13 140 12 , 5 10 T j [°C] 15 20 25 30 -V DS [V] 11 Typical forward diode , V DS -30 V R DS(on) (SMD Version) 10.8 m ID -45 A Features · P-channel -
Infineon Technologies
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IPB45P03P4L-11 IPI45P03P4L-11 IPP45P03P4L-11 4p03L11 4p03l 4P03L11

3N10L16

Abstract: DIODE smd marking v1 characteristics I D = f(V DS); T j = 25 °C; SMD parameter: V GS 200 10 V 5V 6 Typ. drain-source on-state resistance R DS(on) = f(I D); T j = 25 °C; SMD parameter: V GS 36 180 3V 3.5 V 4V 160 4.5 V 140 , R DS(on) = f(T j); I D = 50 A; V GS = 10 V; SMD 30 25 100 R DS(on) [m] 50 0 1 2 3 4 5 , Typical forward diode characteristicis IF = f(VSD) parameter: T j 103 12 Typ. avalanche , DS R DS(on),max (SMD version) ID 100 15.4 50 PG-TO262-3-1 V m A Features · N-channel - Enhancement
Infineon Technologies
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3N10L16 smd diode 949 IPB50N10S3L-16 IPI50N10S3L-16 IPP50N10S3L-16

4P04L03

Abstract: IPP120P04P4L-03 characteristics I D = f(V DS); T j = 25 °C; SMD parameter: V GS 640 -10 V -5 V 6 Typ. drain-source on-state resistance R DS(on) = (I D); T j = 25 °C; SMD parameter: V GS 20 -2.8 V -3 V -3.5 V 560 18 16 -4.5 V , . drain-source on-state resistance R DS(on) = f(T j); I D = -100 A; V GS = -10 V; SMD 4.5 560 -55 °C , 180 101 0 5 10 15 20 25 30 T j [°C] -V DS [V] 11 Typical forward diode characteristicis IF , V DS R DS(on) (SMD Version) ID -40 3.1 -120 V mW A Features · P-channel - Logic Level -
Infineon Technologies
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IPB120P04P4L-03 IPP120P04P4L-03 4P04L03 IPI120P04P4L-03
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