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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: CENTER-TAP, RECTIFIER IN HERMETIC ISOLATED TO 220 PACKAGE SMD 1201 SMD 1202 SMD 1203 SMD 1204 Designed , Available screened to SM883 SM883 QUICK REFERENCE DATA Part Number Vr If trr SMD 1201 50V 20A 35nS SMD 1202 100V 20A 35nS SMD 1203 150V 20A 35nS SMD 1204 200V 20A 35nS ABSOLUTE MAXIMUM RATINGS (@ 25°C unless otherwise specified) Symbol SMD 1201 SMD 1202 SMD 1203 SMD 1204 Unit Peak Repetitive Reverse Voltage Vrrm , Non-repetitive Peak Surge Current per Ifsm 200 200 200 200 A Diode, Surge Applied at Rate Load Conditions ... | OCR Scan |
3 pages, |
101 SMD DIODE VOLTAGE TRANSIENT SMD SMD VR 1204 5a smd diode JC 1201 DIODE SMD 55 jg smd Z3 SMD smd symbols TO-220 package smd 1203 5 SMD 20A 1202 smd diode DDDS234 DDDS234 abstract |
| Abstract: LESHAN RADIO COMPANY, LTD. Band-switching diode BA 892 FEATURES · Small plastic SMD package · Low diode capacitance · Low diode forward resistance · Small inductance. 1 APPLICATIONS · , DESCRIPTION SOD523 SC-79 SC-79 Planar, high performance band-switch diode in a small SMD plastic package , =90°C MIN. +150 °C ELECTRICAL CHARACTERISTICS T j = 25°C unless otherwise specified. SYMBOL PARAMETER VF forward voltage IR Cd reverse current diode capacitance CONDITIONS I F =10 mA ... | Original |
2 pages, |
smd diode j S4 SMD DIODE DIODE S4 92 diode s4 smd diode JS S4 DIODE smd diode S4 datasheet abstract |
| Abstract: LESHAN RADIO COMPANY, LTD. Band-switching diode BA 277 FEATURES · Small plastic SMD package · Continuous reverse voltage: max. 35 V · Continuous forward current: max. 100 mA · Low diode capacitance: max. 1.2 pF · Low diode forward resistance: max. 0.7 . APPLICATIONS · Low loss band switching , performance band-switching diode in a small plastic SOD523 (SC-79 SC-79) SMD package. 1 CATHODE 1 2 , =25°C 10 -1 f = 100 MHz; T j =25°C 1 10 V R (V) Fig.1 Diode capacitance as a ... | Original |
2 pages, |
smd diode S4 smd diode JS SC-79 SC-79 abstract |
| Abstract: LESHAN RADIO COMPANY, LTD. Band-switching diode BA 891 FEATURES · Ultra small plastic SMD package · Low diode capacitance: max. 1.05 pF · Low diode forward resistance: max. 0.7 · Small , f = 100 MHz; T j =25°C 10 -1 10 Â1 1 10 I F (mA ) Fig.2 Diode forward resistance as a , circuits. DESCRIPTION The BA891 BA891 is a planar, high performance band-switching diode in the ultra small SOD523 SMD plastic package. 1 CATHODE 1 2 SOD523 SC-79 SC-79 2 ANODE LIMITING VALUES In ... | Original |
2 pages, |
smd diode S4 S4 DIODE DIODE S4 08 BA891 BA891 abstract |
| Abstract: SMD Schottky Barrier Diode CDBFR0140R CDBFR0140R(RoHs Device) lo =100 mA Vr = 40 Volts coAtcmi» SMD Diodes , Capacitance between terminals f= 1 MHz, and 10VDC 10VDC reversevoltage Ct 6 PF QW-A1061 QW-A1061 rev:a Page 1 SMD Schottky Barrier Diode COAÃŒCHII» SMD Diodes Specialist RATING AND CHARACTERISTIC CURVES (CDBFR0140R CDBFR0140R , (1.00) Typ.fc T â- 51 , i j - ü/ü A 1 ,jl : niJ (V j= j / / / / / 0.2 ... | OCR Scan |
2 pages, |
CDBFR0140R CDBFR0140R abstract |
| Abstract: LESHAN RADIO COMPANY, LTD. Low-voltage variable capacitance diode FEATURES · Excellent linearity · Ultra small plastic SMD package · C4: 2.25 pF; ratio: 2.35 · Low series resistance. APPLICATIONS · Voltage controlled oscillators (VCO). DESCRIPTION The BB143 BB143 is a variable capacitance diode, fabricated in planar technology, and encapsulated in the SOD523 (SC-79 SC-79) ultra small plastic SMD package. , ELECTRICAL CHARACTERISTICS T j =25°C unless otherwise specified. SYMBOL PARAMETER reverse current rs ... | Original |
2 pages, |
DIODE capacitance smd marking 5 smd diode marking 79 BB143 SC-79 BB143 abstract |
| Abstract: LESHAN RADIO COMPANY, LTD. Low-voltage variable capacitance diode BB 142 FEATURES · Excellent linearity · Ultra small plastic SMD package · C4: 2.05 pF; ratio: 2.2 · Low series resistance. , diode, fabricated in planar technology, and encapsulated in the SOD523 (SC-79 SC-79) ultra small plastic SMD package. 1 2 SOD523 SC-79 SC-79 2 ANODE MARKING CODE:K K 1 CATHODE 1 2 , ELECTRICAL CHARACTERISTICS T j =25°C unless otherwise specified. SYMBOL IR PARAMETER reverse current ... | Original |
2 pages, |
Bb142 BB142 SC-79 BB142 abstract |
| Abstract: LESHAN RADIO COMPANY, LTD. Low-voltage variable capacitance diode BB 141 FEATURES · Excellent linearity · Ultra small plastic SMD package · C4: 2.38 pF; ratio: 1.76 · Low series resistance. , diode, fabricated in planar technology, and encapsulated in the SOD523 (SC-79 SC-79) ultra small plastic SMD package. 1 2 SOD523 SC-79 SC-79 2 ANODE MARKING CODE:H H 1 CATHODE 1 2 , ELECTRICAL CHARACTERISTICS T j =25°C unless otherwise specified. SYMBOL PARAMETER reverse current rs ... | Original |
2 pages, |
smd marking 76 MARKING C SOD523 smd diode marking 79 BB141 SC-79 BB141 abstract |
| Abstract: SMD Schottky Barrier Diode CDBF0140R CDBF0140R (Lead-free Device) lo =100 mA Vr = 40 Volts COAÌCHII» SMD Diodes Specialist Features Low reverse current. Designed for mounting on small surface. Extremely thin / leadless package. Majority carrier conduction. Mechanical data Case: 1005(2512)standard package, molded , :a Page 1 SMD Schottky Barrier Diode COAÌCHII» SMD Diodes Specialist RATING AND CHARACTERISTIC , i j - ü/ü A 1 ,jl : niJ (V j= j / / / / / 0.2 ... | OCR Scan |
2 pages, |
diode 351 CDBF0140R QW-A1016 CDBF0140R abstract |
| Abstract: SMD Schottky Barrier Diode CDBUR0140R CDBUR0140R(RoHsDevice) lo =100 mA Vr = 40 Volts coAtcmi» SMD Diodes Specialist Features Low reverse current. Designed for mounting on small surface. Extremely thin / leadless , Capacitance between terminals f= 1 MHz, and 10VDC 10VDC reversevoltage Ct 6 PF QW-A1060 QW-A1060 rev:a Page 1 SMD Schottky Barrier Diode COAÌCHII» SMD Diodes Specialist RATING AND CHARACTERISTIC CURVES (CDBUR0140R CDBUR0140R , i j - ü/ü A 1 ,jl : niJ (V j= j / / / / / 0.2 ... | OCR Scan |
2 pages, |
smd 1608 CDBUR0140R CDBUR0140R abstract |
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| Block(TM); zener with integrated blocking diode General info The SMA ZenBlock(tm) is designed to protect . The SMA ZenBlock(tm) combines a zener/TVS with a fast soft-recovery diode in one package, and can be used to replace double diode, RC or RCD snubbers. The BZG142 BZG142 BZG142 BZG142 consists of a glass passivated -moulded thermo-setting plastic. The small rectangular package has two J bent leads. Features Zener and 600 V/250 ns blocking diode in one package Protects the MOSFET in power IC controllers such www.datasheetarchive.com/files/philips/pip/bzg142_3.html |
Philips | 23/04/2003 | 7.13 Kb | HTML | bzg142_3.html |
| J bent leads. Zener and 600 V/250 ns blocking diode in one package _3 BZG142 BZG142 BZG142 BZG142 SMA ZenBlock(TM); zener with integrated blocking diode soft-recovery diode in one package, and can be used to replace double diode, RC or RCD snubbers W) Ersm (mJ) Ersm (mJ) TVS-peak power-rating (W) TVS-peak power-rating (W) Total power dissipation (mW) Ersm (mJ) DESCRIPTION Zener working voltage (V) TVS-peak power-rating (W www.datasheetarchive.com/files/philips/pip/bzg142_3-v1.html |
Philips | 14/02/2002 | 15.43 Kb | HTML | bzg142_3-v1.html |
| BZX585 BZX585 BZX585 BZX585 series Voltage regulator diodes Low-power voltage regulator diodes in a small plastic SMD SOD523 package. The diodes are available in (%) V Z tol (%) Configuration @ T j (°C) @ T j (°C) I ZSM max (A) I ZSM (mW) Ptot max (mW) Ptot max (mW) Ptot max (mW) @ T j (°C) @ T j (°C) Configuration @ T j (°C) V Z nom (V) I F(AV) max (mA) @ T tp /T amb (°C) T p (u www.datasheetarchive.com/files/philips/pip/bzx585_series_2-v1.html |
Philips | 14/02/2002 | 15.99 Kb | HTML | bzx585_series_2-v1.html |
| Diode, Low Drift 883/SMD 5962-8759401 NOW Diode, Low Drift 883/SMD 5962-8759402 NOW Flows 2 SMD/JAN 3 Availability LM103-3 LM103-3 LM103-3 LM103-3.0 H Reference Diode, BV = 3.0V 883/SMD 7702806 NOW www.datasheetarchive.com/files/national/htm/nsc00754-v4.htm |
National | 16/09/1998 | 34.64 Kb | HTM | nsc00754-v4.htm |
| Diode, Low Drift 883/SMD 5962-8759401 NOW Diode, Low Drift 883/SMD 5962-8759402 NOW Flows 2 SMD/JAN 3 Availability LM103-3 LM103-3 LM103-3 LM103-3.0 H Reference Diode, BV = 3.0V 883/SMD 7702806 NOW www.datasheetarchive.com/files/national/htm/nsc00758-v4.htm |
National | 16/09/1998 | 34.26 Kb | HTM | nsc00758-v4.htm |
| Diode, Low Drift 883/SMD 5962-8759401 NOW Diode, Low Drift 883/SMD 5962-8759402 NOW Flows 2 SMD/JAN 3 Availability LM103-3 LM103-3 LM103-3 LM103-3.0 H Reference Diode, BV = 3.0V 883/SMD 7702806 NOW www.datasheetarchive.com/files/national/docs/wcd0000f/wcd00f20.htm |
National | 03/04/1998 | 33.44 Kb | HTM | wcd00f20.htm |
| Diode, Low Drift 883/SMD 5962-8759401 NOW Diode, Low Drift 883/SMD 5962-8759402 NOW Flows 2 SMD/JAN 3 Availability LM103-3 LM103-3 LM103-3 LM103-3.0 H Reference Diode, BV = 3.0V 883/SMD 7702806 NOW www.datasheetarchive.com/files/national/docs/wcd00010/wcd010c0.htm |
National | 03/04/1998 | 32.92 Kb | HTM | wcd010c0.htm |
| Block(TM); zener with integrated blocking diode General info Cavity free cylindrical glass package 8 mm embossed tape. (1) Types BZD142W-68 BZD142W-68 BZD142W-68 BZD142W-68,-100 and -160 have a 600 V blocking diode with Zenblock™: integrated zener and blocking diode 1999-03-09 Parametrics TYPENUMBER @ I Z (mA) Description Ersm(mJ) Package Total power dissipation(mW) TVS stand-off voltage with blocking diode 10 SOD87 (LLDL) 1500 82 100 600 100 BZD142W-160 BZD142W-160 BZD142W-160 BZD142W-160 5 Zenblock www.datasheetarchive.com/files/philips/pip/bzd142w_2.html |
Philips | 23/04/2003 | 7.48 Kb | HTML | bzd142w_2.html |
| PLVA2600A PLVA2600A PLVA2600A PLVA2600A series Low-voltage avalanche regulator double diodes The PLVA2600A PLVA2600A PLVA2600A PLVA2600A series consists of two high performance voltage regulator diodes with common anodes, in small SOT23 plastic SMD packages. The series consists of PLVA2650A PLVA2650A PLVA2650A PLVA2650A to PLVA2668A PLVA2668A PLVA2668A PLVA2668A detector relays. Typenumber P ZSM @T j and (W) I F (%) V Z tol (%) V Z nom (V) @ T tp /T amb (°C) @ T tp /T amb (°C) P ZSM @T j www.datasheetarchive.com/files/philips/pip/plva2600a_series_4-v1.html |
Philips | 14/02/2002 | 19.05 Kb | HTML | plva2600a_series_4-v1.html |
| BZD142W BZD142W BZD142W BZD142W ZenBlock(TM); zener with integrated blocking diode ,-100 and -160 have a 600 V blocking diode with a minimum t rr of 1000 ns. (2) ) TINYSwitch and A) DESCRIPTION DESCRIPTION Total power dissipation (mW) Total power dissipation (mW) Ersm (mJ -off voltage (V) Ersm (mJ) Zener working voltage (V) V R (V) V R (V) @ I Z (m ) Ersm (mJ) Zener working voltage (V) TVS-peak power-rating (W) Total power dissipation (m www.datasheetarchive.com/files/philips/pip/bzd142w_2-v1.html |
Philips | 14/02/2002 | 18.96 Kb | HTML | bzd142w_2-v1.html |