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TPD3E001DRY Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD4E004DSFR Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD2E001YFPR Texas Instruments DIODE UNIDIRECTIONAL, SILICON, TVS DIODE, LEAD FREE, DSBGA-4, Transient Suppressor visit Texas Instruments
UC1612J/883B Texas Instruments SILICON, RECTIFIER DIODE visit Texas Instruments
UC1610J/883B Texas Instruments SILICON, BRIDGE RECTIFIER DIODE visit Texas Instruments
UC3612J Texas Instruments SILICON, RECTIFIER DIODE visit Texas Instruments

smd diode j

Catalog Datasheet MFG & Type PDF Document Tags

SLAU265

Abstract: MSP430Fxx Transistors with Bias Res. SOT-363 (OnSemi) R1 Resistor MCR01 MZP J 221 1 SMD Chip Res 220 Ohm , MCR01 MZP J 334 1 SMD Chip Res 330 k Ohm 5% 1/16W 0402 R7 Resistor MCR01 MZP J 151 1 SMD Chip Res 150 Ohm 5% 1/16W 0402 R8 Resistor MCR01 MZP J 223 1 SMD Chip Res 22kOhm 5% 1/16W 0402 R9 Resistor MCR01 MZP J 223 1 SMD Chip Res 22kOhm 5% 1/16W 0402 R10 , Ohm 1% 1/16W 0402 R14 Resistor MCR01 MZP J 221 1 SMD Chip Res 220 Ohm 5% 1/16W 0402
Elprotronic
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SLAU265 MSP430Fxx mzp a 100 45 16 SMD transistor code NC CL05B 1003 smd resistor REP430F MSP430 PM041A01 TPS7201QD MSP430F5437IPN TQFP-80

SMD diode NC

Abstract: 74 HC 00 smd Width Limited By T j Max SMD 2001 500 500 13 8.0 52 SMD 2002 450 450 13 8.0 52 ±20 SMD 2003 500 , CHARACTERISTICS JS Continuous Source Current (Body Diode) SMD 2001 SMD 2002 SMD 2003 SMD 2004 !s m Pulse source , ?-// SMD 2001 N-Channel Power MOSFETs, IN HERMETIC ISOLATED TO -254AA PACKAGE Ideally suited for , high energy pulse circuits. FEATURES Q U IC K REFERENCE D ATA SMD 2003 sm dhxm Part Number SMD 2001 SMD 2002 SMD 2003 SMD 2004 V DS 500V 450V 500V 450V RDS(on) 0.4Q 0.4Q 0.5Q . 0.5Q. to
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OCR Scan
SMD diode NC 74 HC 00 smd 2003 SMD IC TO-254AA Package SMD 2002 smd js t D0D52S3 SM883

SMD diode NC

Abstract: 4001 diode reverse P-N junction rectifier. I sm Pulse Source Current SMD 4001 52 A - - (Body Diode)1 SMD 4002 SMD 4003 A 48 - - SMD 4004 V sd SMD 4001 Diode Forward Voltage1 1.4 V Tc=25°C , I s = 13A, V gs = 0V - , energy pulse circuits. SMD SMD SMD SMD 4001 4002 4003 4004 QUICK REFERENCE DATA (PER FET) Part Number SMD 4001 SMD 4002 SMD 4003 SMD 4004 V ds RDS(on) Id FEATURES · · · · · · Fast switching Low , ) Gate-Source Voltage Operating Junction and Storage Temperature Range Lead Temperature ® T j = 25°C to 150
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OCR Scan
4001 diode 4002 diode smd diode Uj 4001 smd diode IN 4004 smd diode y3 13T13T
Abstract: Formosa MS SMD Switching Diode BAS16W/BAV70W/BAW56W/BAV99W/BAL99W List List , Date 2010/07/10 Revision C Page. 8 Formosa MS SMD Switching Diode BAS16W/BAV70W , Date 2010/07/10 Revision C Page. 8 Formosa MS SMD Switching Diode BAS16W/BAV70W , 2008/02/10 Revised Date 2010/07/10 Revision C Page. 8 Formosa MS SMD Switching Diode , Formosa MS SMD Switching Diode BAS16W/BAV70W/BAW56W/BAV99W/BAL99W Reel packing PACKAGE SOT Formosa MS
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DS-221914 MIL-STD-750D METHOD-2031 MIL-STD-202F METHOD-208 METHOD-1038

ComChip Date code

Abstract: diode marking code 98 Supper Low Capacitance SMD ESD Protection Diode CPDQ5V0USP-HF RoHS Device Halogen Free , Page 1 Comchip Technology CO., LTD. Supper Low Capacitance SMD ESD Protection Diode RATING AND , Page 2 QW-JP033 Comchip Technology CO., LTD. Supper Low Capacitance SMD ESD Protection Diode Comchip SMD Diode Specialist Reel Taping Specification d P0 P1 T E F W B A C , Technology CO., LTD. Supper Low Capacitance SMD ESD Protection Diode Comchip SMD Diode Specialist
Comchip Technology
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ComChip Date code diode marking code 98 SMD MARKING code ta 0402/SOD-923F IEC61000-4-2 MIL-STD-750 0402/SOD-923

smd diode green BAND

Abstract: 1N4148WS SMD Switching Diode 1N4148WS-FL List Formosa MS List , 2011/08/12 Revision B Page. 7 Page 1 DS-221954 SMD Switching Diode 1N4148WS , 2011/08/12 Revision B Page. 7 Page 3 DS-221954 SMD Switching Diode 1N4148WS , Page 5 DS-221954 SMD Switching Diode 1N4148WS-FL Reel packing PACKAGE MARKING CODE A2 S1 , B Page. 7 Page 6 DS-221954 SMD Switching Diode 1N4148WS-FL High reliability test
Formosa MS
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smd diode green BAND A2 DIODE SMD CODE MARKING marking code a2 SMD diode smd diode sod-123 marking code a2 smd diode sod marking code a2 METHOD-1027 METHOD-1036 JESD22-A102 METHOD-1051 METHOD-1056 METHOD-4066-2

4N03L04

Abstract: iPP80n03S4L-04 -03 IPI80N03S4L-04, IPP80N03S4L-04 5 Typ. output characteristics I D = f(V DS); T j = 25 °C, SMD parameter: V GS 320 10 V 5V 4.5 V 6 Typ. drain-source on-state resistance R DS(on) = f(I D); T j = 25 °C, SMD , °C 25 °C 8 Typ. drain-source on-state resistance R DS(on) = f(T j); I D = 80 A; V GS = 10 V, SMD , forward diode characteristicis IF = f(VSD) parameter: T j 103 12 Typ. avalanche characteristics I A S , DS R DS(on),max (SMD version) ID 30 3.3 80 PG-TO262-3-1 V m A Features · N-channel - Enhancement
Infineon Technologies
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4N03L03 4N03L04 4n03 IPB80N03S4L-03 PG-TO263-3-2 PG-TO220-3-1

4P03L04

Abstract: 4p03 D = f(V DS); T j = 25 °C; SMD R DS(on) = (I D); T j = 25 °C; SMD parameter: V GS parameter , ; SMD parameter: T j 320 6 25 °C -55 °C 175 °C 5 R DS(on) [m] -I D [A] 240 , V DS -30 V R DS(on) (SMD Version) 4.1 m ID -80 A Features · P-channel - , -3-1 4P03L04 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Continuous , Operating and storage temperature T j, T stg - -55 . +175 °C IEC climatic category; DIN IEC
Infineon Technologies
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IPB80P03P4L-04 IPI80P03P4L-04 IPP80P03P4L-04 4p03 146a marking diode DIODE smd marking Ag

3N10L12

Abstract: IPB70N10S3L-12 D = f(V DS); T j = 25 °C; SMD R DS(on) = f(I D); T j = 25 °C; SMD parameter: V GS parameter , resistance I D = f(V GS); V DS = 6V R DS(on) = f(T j); I D = 50 A; V GS = 10 V; SMD parameter: T j , 15 20 25 30 V DS [V] T j [°C] 11 Typical forward diode characteristicis 12 Typ , DS V R DS(on),max (SMD version) 12 m ID Features 100 70 A PG-TO263 , -12 PG-TO262-3-1 3N10L12 IPP70N10S3L-12 PG-TO220-3-1 3N10L12 Maximum ratings, at T j=25 °C
Infineon Technologies
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IPB70N10S3L-12 IPI70N10S3L-12 DIODE smd marking v1 3N10L

4N03L03

Abstract: 4N03L02 ,pulse Diode forward voltage V SD V GS=0 V, I F=80 A, T j=25 °C Reverse recovery time2) t , resistance I D = f(V DS); T j = 25 °C; SMD R DS(on) = f(I D); T j = 25 °C; SMD parameter: V GS , ); V DS = 6V R DS(on) = f(T j); I D = 80 A; V GS = 10 V; SMD parameter: T j 3.5 350 -55 °C , 180 5 10 15 20 25 30 V DS [V] T j [°C] 11 Typical forward diode , V DS V R DS(on),max (SMD version) 2.4 m ID Features 30 80 A PG-TO263
Infineon Technologies
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IPB80N03S4L-02 IPI80N03S4L-03 IPP80N03S4L-03 4N03L02 C25 smd ANPS071E

4N03L15

Abstract: DIODE smd marking Ag ) I S,pulse Diode forward voltage V SD V GS=0 V, I F=22 A, T j=25 °C Reverse recovery , D = f(V DS); T j = 25 °C, SMD R DS(on) = f(I D); T j = 25 °C, SMD parameter: V GS parameter , ) = f(T j); I D = 22 A; V GS = 10 V, SMD parameter: T j 80 22 -55 °C 25 °C 20 175 °C , 15 20 25 30 V DS [V] T j [°C] 11 Typical forward diode characteristicis 12 Typ , V DS 30 R DS(on),max (SMD version) 14.6 ID Features PG-TO263-3-2 · N-channel -
Infineon Technologies
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IPB22N03S4L-15 IPI22N03S4L-15 IPP22N03S4L-15 4N03L15 diode smd marking T2

4N06L04

Abstract: IPI90N06S4L-04 pulse current2) I S,pulse Diode forward voltage V SD V GS=0V, I F=90A, T j=25°C 0.6 , . drain-source on-state resistance I D = f(V DS); T j = 25 °C; SMD R DS(on) = f(I D); T j = 25 °C; SMD , resistance I D = f(V GS); V DS = 6V R DS(on) = f(T j); I D = 90 A; V GS = 10 V; SMD parameter: T j , [V] T j [°C] 11 Typical forward diode characteristicis 12 Avalanche characteristics IF = , V DS 60 V R DS(on),max (SMD version) 3.4 m ID 90 A Features · N-channel
Infineon Technologies
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IPB90N06S4L-04 IPI90N06S4L-04 IPP90N06S4L-04 4N06L04 t 04 27 smd c2804

4N06L08

Abstract: smd8050 Diode pulse current2) I S,pulse Diode forward voltage V SD V GS=0V, I F=45A, T j , . drain-source on-state resistance I D = f(V DS); T j = 25 °C; SMD R DS(on) = f(I D); T j = 25 °C; SMD , I D = f(V GS); V DS = 6V R DS(on) = f(T j); I D = 45 A; V GS = 10 V; SMD parameter: T j 180 , V DS 60 V R DS(on),max (SMD version) 7.9 m ID 45 A Features · N-channel , -08 PG-TO262-3-1 4N06L08 IPP45N06S4L-08 PG-TO220-3-1 4N06L08 Maximum ratings, at T j=25 °C
Infineon Technologies
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IPB45N06S4L-08 IPI45N06S4L-08 smd8050 C12140 71A marking

4n04l04

Abstract: IPB80N04S4L-04 characteristics 6 Typ. drain-source on-state resistance I D = f(V DS); T j = 25 °C; SMD R DS(on) = f(I D); T j = 25 °C; SMD parameter: V GS parameter: V GS 15 300 10 V 5V 13 4.5 V 240 , f(V GS); V DS = 6V R DS(on) = f(T j); I D = 80 A; V GS = 10 V; SMD parameter: T j 6.5 240 , 0 180 5 10 15 20 25 30 V DS [V] T j [°C] 11 Typical forward diode , V DS V R DS(on),max (SMD version) 4.0 m ID Features 40 80 A PG-TO263
Infineon Technologies
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IPB80N04S4L-04 IPI80N04S4L-04 4n04l04 IPP80N04S4L-04 4N04L04

4P04L06

Abstract: smd diode 104 IPB80P04P4L-06 IPI80P04P4L-06, IPP80P04P4L-06 5 Typ. output characteristics I D = f(V DS); T j = 25 °C; SMD parameter: V GS 320 -10V -5V 6 Typ. drain-source on-state resistance R DS(on) = (I D); T j = 25 °C; SMD , forward diode characteristicis IF = f(VSD) parameter: T j 103 12 Drain-source breakdown voltage V BR , Product Summary V DS R DS(on) (SMD Version) ID -40 6.4 -80 V mW A Features · P-channel - Logic Level - , 4P04L06 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current1
Infineon Technologies
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smd diode 104 smd diode UM 08 smd diode marking DD

4P04L08

Abstract: IPP70P04P4L-08 -08 IPI80P04P4L-08, IPP80P04P4L-08 5 Typ. output characteristics I D = f(V DS); T j = 25 °C; SMD parameter: V GS 320 -10V 6 Typ. drain-source on-state resistance R DS(on) = (I D); T j = 25 °C; SMD parameter: V , °C 8 Typ. drain-source on-state resistance R DS(on) = f(T j); I D = -80 A; V GS = -10 V; SMD 10 , 15 20 25 30 35 40 T j [°C] -V DS [V] 11 Typical forward diode characteristicis IF = f(VSD , DS R DS(on) (SMD Version) ID -40 7.9 -80 V mW A Features · P-channel - Logic Level - Enhancement
Infineon Technologies
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IPP70P04P4L-08 4P04L08 IPB80P04P4L-08 IPB70P04P4L-08 IPI70P04P4L-08

smd diode marking jc sot23

Abstract: SMD Switching Diode BAL99/BAV99/BAW56/BAV70 Formosa MS List List , -221906 2008/02/10 2010/11/29 C Page. 8 Formosa MS SMD Switching Diode BAL99/BAV99/BAW56 , R = 70V, T J =150 OC)BAV70 V 2.5 30 60 50 100 IR Diode Capacition(V R = 0V, f = 1.0MHz , . 8 Formosa MS SMD Switching Diode BAL99/BAV99/BAW56/BAV70 Pinning information Type number , Revision DS-221906 2008/02/10 2010/11/29 C Page. 8 Formosa MS SMD Switching Diode
Formosa MS
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smd diode marking jc sot23 METHOD-1021 METHOD-1031

4p03L11

Abstract: 4p03l . output characteristics 6 Typ. drain-source on-state resistance I D = f(V DS); T j = 25°C; SMD R DS(on) = (I D); T j = 25°C; SMD parameter: V GS parameter: V GS 20 180 -4.0V -10 V , =-45A; V GS = -10V; SMD parameter: T j 180 -55 °C 14 25 °C 175 °C 160 13 140 12 , 5 10 T j [°C] 15 20 25 30 -V DS [V] 11 Typical forward diode , V DS -30 V R DS(on) (SMD Version) 10.8 m ID -45 A Features · P-channel -
Infineon Technologies
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IPB45P03P4L-11 IPI45P03P4L-11 IPP45P03P4L-11 4p03L11 4p03l 4P03L11

3N10L16

Abstract: DIODE smd marking v1 characteristics I D = f(V DS); T j = 25 °C; SMD parameter: V GS 200 10 V 5V 6 Typ. drain-source on-state resistance R DS(on) = f(I D); T j = 25 °C; SMD parameter: V GS 36 180 3V 3.5 V 4V 160 4.5 V 140 , R DS(on) = f(T j); I D = 50 A; V GS = 10 V; SMD 30 25 100 R DS(on) [m] 50 0 1 2 3 4 5 , Typical forward diode characteristicis IF = f(VSD) parameter: T j 103 12 Typ. avalanche , DS R DS(on),max (SMD version) ID 100 15.4 50 PG-TO262-3-1 V m A Features · N-channel - Enhancement
Infineon Technologies
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3N10L16 smd diode 949 IPB50N10S3L-16 IPI50N10S3L-16 IPP50N10S3L-16

4P04L03

Abstract: IPP120P04P4L-03 characteristics I D = f(V DS); T j = 25 °C; SMD parameter: V GS 640 -10 V -5 V 6 Typ. drain-source on-state resistance R DS(on) = (I D); T j = 25 °C; SMD parameter: V GS 20 -2.8 V -3 V -3.5 V 560 18 16 -4.5 V , . drain-source on-state resistance R DS(on) = f(T j); I D = -100 A; V GS = -10 V; SMD 4.5 560 -55 °C , 180 101 0 5 10 15 20 25 30 T j [°C] -V DS [V] 11 Typical forward diode characteristicis IF , V DS R DS(on) (SMD Version) ID -40 3.1 -120 V mW A Features · P-channel - Logic Level -
Infineon Technologies
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IPB120P04P4L-03 IPP120P04P4L-03 4P04L03 IPI120P04P4L-03
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