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Abstract: resistance, junction - ambient /"?thJA T0-220AB T0-220AB 62 SMD version, device on PCB1) R thJA TO-263AB(D2PAK) 40 , , Vcc = 600V, /C = 7A, \/GE = -15/15V -15/15V, Rq=A7£1, Energy losses include "tail" and BYP300 BYP300 diode reverse , 7A, \/ge = -15/15V -15/15V, F?G=47i2 Energy losses include "tail" and BYP300 BYP300 diode reverse recovery. - 12 14 , Figure 2. Safe operating area (D = 0, Tc = 25°C, 7] < 150°C) 1 50 w 125W Q 100W Q. W w Q CC LU 7k , to BYP300 BYP300 diode recovery. O.OmJ OA 5A 10A 15A 20A 25A 30A /c, COLLECTOR CURRENT Figure 13. Typical ... OCR Scan
datasheet

10 pages,
549.03 Kb

smd UJ 99 smd code diode 20a SGP07N120 SGB07N120 BYP300 smd diode JC 7K SGP07N120 abstract
datasheet frame
Abstract: climatic category, DIN IEC 68-1 - 55/150/56 Thermal resistance Chip-case Chip-ambient ^th JC ^th JA , Symbol Values Unit min. typ. max. Reverse Diode Continous source current Is - - -8.0 A Pulsed source current Is M - - -32 Diode forward on-voltage £ = -16 A, Kgs = 0 KSD _ -1.0 -1.7 V , Forward characteristics of reverse diode W(^sd) Parameter: 7], tp = 80 ¡as 2 BTS 100 (/p= 80/is , burrs this surface 2) dip tinning TO 220 AB Ordering Code SMD version E3045 E3045 C67078-A5007-A7 C67078-A5007-A7 1.5 t ... OCR Scan
datasheet

78 pages,
4679.03 Kb

BTS 432 E3062A BTS 132 SMD BTS 131 SIEMENS C67078-A5007-A2 132 kv gis jvr 20 751 SIEMENS THYRISTOR ucp 101 TO-220AB Option E3044 Package 4 MHZ KDS 6b 410F2 41282 bts bts114 datasheet abstract
datasheet frame
Abstract: 55/150/56 Thermal resistance Chip-case Chip-ambient ^th JC ^th JA , °C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. Reverse Diode Continous source current Is - - -8.0 A Pulsed source current Is M - - -32 Diode forward on-voltage £ = -16 , characteristics of reverse diode W(^sd) Parameter: 7], tp = 80 ¡as 2 BTS 100 (/p= 80/is) SIT004H SIT004H 20 40 60 80 100 , AB Ordering Code SMD version E3045 E3045 C67078-A5007-A7 C67078-A5007-A7 1.5 t 1 0.5 -9.9- t 0.75 1.05 1.3 â-  2.4- 0.2- ... OCR Scan
datasheet

78 pages,
4679.02 Kb

C67078-A5007-A2 bts121a BTS 131 SMD datasheet abstract
datasheet frame
Abstract: 55/150/56 Thermal resistance Chip-case Chip-ambient ^th JC ^th JA , °C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. Reverse Diode Continous source current Is - - -8.0 A Pulsed source current Is M - - -32 Diode forward on-voltage £ = -16 , characteristics of reverse diode W(^sd) Parameter: 7], tp = 80 ¡as 2 BTS 100 (/p= 80/is) SIT004H SIT004H 20 40 60 80 100 , AB Ordering Code SMD version E3045 E3045 C67078-A5007-A7 C67078-A5007-A7 1.5 t 1 0.5 -9.9- t 0.75 1.05 1.3 â-  2.4- 0.2- ... OCR Scan
datasheet

78 pages,
4679.02 Kb

Thyristor ys 170 C67078-A5007-A2 bts412b2 SMD transistor JD BTS 130 datasheet abstract
datasheet frame
Abstract: 55/150/56 Thermal resistance Chip-case Chip-ambient ^th JC ^th JA , °C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. Reverse Diode Continous source current Is - - -8.0 A Pulsed source current Is M - - -32 Diode forward on-voltage £ = -16 , characteristics of reverse diode W(^sd) Parameter: 7], tp = 80 ¡as 2 BTS 100 (/p= 80/is) SIT004H SIT004H 20 40 60 80 100 , AB Ordering Code SMD version E3045 E3045 C67078-A5007-A7 C67078-A5007-A7 1.5 t 1 0.5 -9.9- t 0.75 1.05 1.3 â-  2.4- 0.2- ... OCR Scan
datasheet

78 pages,
4679.02 Kb

KDS -5a C67078-A5007-A2 datasheet abstract
datasheet frame
Abstract: Contact factory for other packages and DESC SMD number. FEATURES (typical): 7= 7?-^-/ft • 1,7GHz , +85°C. differential input current diode protected ±25mA t AJ : Sample tested at +25"C. maximum junction , -65°C to +150°C * SMD : Sample tested at +25°C, -55°C and +125°C. lead temperature (soldering 10 sec , ) liasaisiipsii^iiiiii!! o 0 â- fi to 01 A,= 20 a,=-ioo u 7k *K « ^ Phasc- â- 135 i-180 -i â- 90 135 10 100 , ) Figure 13: Current Noise Density vs. Feedback Resistance L,= JC + 4 kT Equation 4: Total Equivalent ... OCR Scan
datasheet

8 pages,
1218.36 Kb

deboo CLC425 CLC425A8B CLC425A8L-2 CLC425AIB CLC425AJ CLC425AJP CLC425ALC CLC425AMC BI 335A datasheet abstract
datasheet frame
Abstract: TOP256YN : SMD-8C, M: SDIP-10C SDIP-10C, Y: TO-220-7C, E: eSIP-7C. See part ordering information. Y Package Option for , winding that exceeds of the sum of the voltage rating of the Zener diode connected from the bias winding ... Original
datasheet

48 pages,
1858.59 Kb

top258pn TOP255 TOP256PN TOP254 eSIP-7C TOP260YN TOP254PN top253pn TOP259-261YN top260 top 261 yn TOP259 TOP257 top 258 top253 datasheet abstract
datasheet frame
Abstract: TOP256YN : SMD-8C, M: SDIP-10C SDIP-10C, Y: TO-220-7C, E: eSIP-7C, L: eSIP-7F. See part ordering information. 6. TOP261 , winding that exceeds of the sum of the voltage rating of the Zener diode connected from the bias winding ... Original
datasheet

48 pages,
1892.08 Kb

TOP261LN top260 top*254 en TOP261EN pc357a TOP256EN top258pn TOP252-262 TOP261YN transistor KPS 92 top261 TOP257 TO-220-7C TOP262 datasheet abstract
datasheet frame
Abstract: W88W TOP256YN : SMD-8C, M: SDIP-10C SDIP-10C, Y: TO-220-7C, E: eSIP-7C, L: eSIP-7F. See part ordering information. 6. TOP261 , winding that exceeds of the sum of the voltage rating of the Zener diode connected from the bias winding ... Original
datasheet

48 pages,
1957.08 Kb

POWER INTEGRATIONS Top261 top262ln top261ln TOP261YN. TOP252-262 TOP262 TOP255 TOP261YN top256 TOP261EN TOP260YN TOP258 TOP252 top 258 datasheet abstract
datasheet frame
Abstract: ambient. 4. 230 VAC or 110/115 VAC with doubler. 5. Packages: P: DIP-8C, G: SMD-8C, M: SDIP-10C SDIP-10C, Y , by a manual switch. VUV = IUV Ã- RLS VOV = IOV Ã- RLS RLS DC Input Voltage ON/OFF 7k , TOPSwitch. Resistor R3 and R4 provide line sensing, setting UV at 100 VDC and OV at 450 VDC. Diode D5 , nF 1 kV D1 1N4937 1N4937 The output voltage is controlled using the amplifier TL431 TL431. Diode D9 , output voltage starts rising, current flows through the optocoupler diode inside U2A, resistor R13 and ... Original
datasheet

42 pages,
1236.84 Kb

PI-4724-092107 SDIP-10C smd transistor 7k of IC TOP254 PI-4508-082907 top255yn PI-4715-061207 TOP257 top255 PI-4712-061207 top255p top258 TOP256 TOP254 datasheet abstract
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Product name PIP 1N4148 1N4148 1N4148 1N4148 - High-speed diodes 1N4448 1N4448 1N4448 1N4448 - High-speed diodes 1N4531 1N4531 1N4531 1N4531 - High-speed diodes 1N47xxA series - Voltage regulator diodes 1N914B 1N914B 1N914B 1N914B - High-speed diodes
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Product name PIP 1N4148 1N4148 1N4148 1N4148 - High-speed diodes 1N4448 1N4448 1N4448 1N4448 - High-speed diodes 1N4531 1N4531 1N4531 1N4531 - High-speed diodes 1N47xxA series - Voltage regulator diodes 1N5817 1N5817 1N5817 1N5817 - Schottky barrier diodes
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Digi-Key 742-083-R102CT-ND 742-083-R102CT-ND 742-083-R102CT-ND 742-083-R102CT-ND RNET, 1K, 5%, .063W, 8 Pin Isolated RN4 56.0 3.0 RN6,RN37,RN38 4.7K CTS 742083472J 742083472J 742083472J 742083472J Digi-Key 742-083-R472CT-ND 742-083-R472CT-ND 742-083-R472CT-ND 742-083-R472CT-ND RNET, 4.7K, 5%, .063W, 8 Pin Isolated RN4 57.0 9.0 RN8,RN10,RN17,RN18 166 68.0 4.0 R10,R12,R36,R38 0.0 3R 69.0 15.0 R11,R15,R24,R43,R44,R45, 4.7K Panasonic ERJ-3GSY472 ERJ-3GSY472 ERJ-3GSY472 ERJ-3GSY472 Digi-Key P472GTR-ND P472GTR-ND P472GTR-ND P472GTR-ND RES, 4.7K, 5%, 1/16W 1/16W 1/16W 1/16W, 0603 603.0 R73,R80,R83,R86,R88,R120, R122,R136,R139 70.0 2.0 R13,R DICT-ND DIODE, 10mA, Vf=1V, Vr=75V, DL-35 DL-35 DL-35 DL-35 DL-35 DL-35 DL-35 DL-35 25.0 1.0 D3 10BQ015 10BQ015 10BQ015 10BQ015 International Rectifier 10BQ015 10BQ015 10BQ015 10BQ015
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AMD 11/08/1999 46.5 Kb XLS k6sdb bill of materials.xls
Product listing for Transistors Products listing Product name PIP 2N3904 2N3904 2N3904 2N3904 - NPN switching transistor 2N3906 2N3906 2N3906 2N3906 - PNP switching transistor 2N4401 2N4401 2N4401 2N4401 - NPN switching transistor
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Product listing 1N4148 1N4148 1N4148 1N4148 - High-speed diodes 1N4151 1N4151 1N4151 1N4151 - High-speed diodes 1N4448 1N4448 1N4448 1N4448 - High-speed diodes 1N4531 1N4531 1N4531 1N4531 - High-speed diodes 1N4532 1N4532 1N4532 1N4532 - High-speed diodes 1N4728A 1N4728A 1N4728A 1N4728A - Voltage regulator diodes 1N4729A 1N4729A 1N4729A 1N4729A - Voltage regulator diodes 1N4730A 1N4730A 1N4730A 1N4730A - Voltage regulator diodes 1N4731A 1N4731A 1N4731A 1N4731A - Voltage regulator diodes 1N4732A 1N4732A 1N4732A 1N4732A - Voltage regulator diodes 1N4733A 1N4733A 1N4733A 1N4733A
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BUK110-50GL BUK110-50GL BUK110-50GL BUK110-50GL - PowerMOS transistor Logic level TOPFET BUK114-50L BUK114-50L BUK114-50L BUK114-50L - Logic level TOPFET SMD version of BUK104-50L/S BUK104-50L/S BUK104-50L/S BUK104-50L/S BUK116-50L BUK116-50L BUK116-50L BUK116-50L - Logic level TOPFET SMD version of BUK106-50L BUK106-50L BUK106-50L BUK106-50L BUK128-50DL BUK128-50DL BUK128-50DL BUK128-50DL - Logic level TOPFET SMD version of BUK117-50DL BUK117-50DL BUK117-50DL BUK117-50DL BUK129-50DL BUK129-50DL BUK129-50DL BUK129-50DL - Logic level TOPFET SMD version of BUK118-50DL BUK118-50DL BUK118-50DL BUK118-50DL BUK130-50DL BUK130-50DL BUK130-50DL BUK130-50DL - Logic level TOPFET SMD version of BUK119-50DL BUK119-50DL BUK119-50DL BUK119-50DL BUK204-50X BUK204-50X BUK204-50X BUK204-50X - TOPFET high side switch SMD version of BUK200-50X BUK200-50X BUK200-50X BUK200-50X BUK204-50Y BUK204-50Y BUK204-50Y BUK204-50Y - TOPFET high
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Product listing for Transistors Products listing Product name PIP 2N3904 2N3904 2N3904 2N3904 - NPN switching transistor 2N3906 2N3906 2N3906 2N3906 - PNP switching transistor 2N4401 2N4401 2N4401 2N4401 - NPN switching transistor
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R66 R67 R69 R99 R101 RES, 4.7K, 5% KOA RM73B2BT472J RM73B2BT472J RM73B2BT472J RM73B2BT472J 1206 25 R6 R14 R15 R18 R38 R39 R41 R42 R37 R43 R CHANGE WITHOUT NOTICE! PART DESCRIPTION SUPPLIER PART NUMBER PKG TYPE QTY REFERENCE DESIGNATOR DIODE, 1N TL783CKC TL783CKC TL783CKC TL783CKC TI TL783CKC TL783CKC TL783CKC TL783CKC pth-to220 1 U4 FUSE, 1.5A RayChem SMD150-2 2816 1 F1A CAP, 0.1, 10% KEMET C1206C C1206C C1206C C1206C 53462-0611 pth-6pin 3 PORT1 PORT2 PORT3 22V10 22V10 22V10 22V10,10NS (TSDLY 2424-1) TI-SC PALCE22V10H- PALCE22V10H- PALCE22V10H- PALCE22V10H- 10JC/5 plcc28 1 U19 % KEMET C1206C120K5GAC C1206C120K5GAC C1206C120K5GAC C1206C120K5GAC 1206 2 C18 C25 16V8, 5ns (IDSEL 2422-1) AMD PALCE16V8H-5JC/5 plcc20 1 U25 270PF 270PF 270PF 270PF, 5
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Texas Instruments 08/02/1999 2929.45 Kb ZIP pci12c01.zip
079: High-quality, glass-passivated diodes Implotec - BYD33J BYD33J BYD33J BYD33J 2000-02-07 16 1 0 /catalog/appnotes/17079 Title Date FS080 FS080 FS080 FS080: High-quality, glass-passivated diodes glass bead - BYV27-200 BYV27-200 BYV27-200 BYV27-200 2000-02-07 18 1 0 Ballast: Base Drive Optimisation 1999-05-17 FS079 FS079 FS079 FS079: High-quality, glass-passivated diodes Implotec - BYD33J BYD33J BYD33J BYD33J Ballast: Base Drive Optimisation 1999-05-17 FS079 FS079 FS079 FS079: High-quality, glass-passivated diodes Implotec - BYD33J BYD33J BYD33J BYD33J diodes Title Date FS046 FS046 FS046 FS046: An Electronic Ballast: Base Drive Optimisation 1999-05-17 137 1 0 /catalog
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Philips 25/04/2003 954.24 Kb TXT docindex.txt
/parametrics/19.html Parametrics PDZ12B PDZ12B PDZ12B PDZ12B Configuration 1 Ptot max mW 400 Category General purpose zener diodes I F /parametrics/78.html Parametrics BAQ800 BAQ800 BAQ800 BAQ800 DIODE CAPACITANCE pF 5 DESCRIPTION AM PIN diode CHARGE CARRIER LIFE TIME us 25 1 MHz DIODE SERIES RESISTANCE k 31 1 0 /catalog/parametrics/79.html Parametrics TEA5711/N2 TEA5711/N2 TEA5711/N2 TEA5711/N2 709A 4 2PB709AR 2PB709AR 2PB709AR 2PB709AR .SUBCKT 2PB709AR 2PB709AR 2PB709AR 2PB709AR 1 2 3 Q1 1 2 3 2PB709AR 2PB709AR 2PB709AR 2PB709AR + AREA = 1 D1 1 2 DIODE The diode 70 1 0 601A 5 2PD601AR 2PD601AR 2PD601AR 2PD601AR .SUBCKT 2PD601AR 2PD601AR 2PD601AR 2PD601AR 1 2 3 Q1 1 2 3 2PD601AR 2PD601AR 2PD601AR 2PD601AR + AREA = 1 D1 2 1 DIODE The diode 73 1 0
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Philips 14/02/2002 998.47 Kb TXT docindex-v2.txt