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LT1139ACN Linear Technology LT1139A - Advanced Low Power 5V RS232 Drivers/Receivers with Small Capacitors (Includes LT1130 thru LT1141); Package: PDIP; Pins: 24; Temperature Range: 0°C to 70°C visit Linear Technology - Now Part of Analog Devices Buy
LT1139ACSW#TRPBF Linear Technology LT1139A - Advanced Low Power 5V RS232 Drivers/Receivers with Small Capacitors (Includes LT1130 thru LT1141); Package: SO; Pins: 24; Temperature Range: 0°C to 70°C visit Linear Technology - Now Part of Analog Devices Buy
LT1139ACSW#PBF Linear Technology LT1139A - Advanced Low Power 5V RS232 Drivers/Receivers with Small Capacitors (Includes LT1130 thru LT1141); Package: SO; Pins: 24; Temperature Range: 0°C to 70°C visit Linear Technology - Now Part of Analog Devices Buy
LT1139ACSW#TR Linear Technology LT1139A - Advanced Low Power 5V RS232 Drivers/Receivers with Small Capacitors (Includes LT1130 thru LT1141); Package: SO; Pins: 24; Temperature Range: 0°C to 70°C visit Linear Technology - Now Part of Analog Devices Buy
LT1139ACN#PBF Linear Technology LT1139A - Advanced Low Power 5V RS232 Drivers/Receivers with Small Capacitors (Includes LT1130 thru LT1141); Package: PDIP; Pins: 24; Temperature Range: 0°C to 70°C visit Linear Technology - Now Part of Analog Devices Buy
LT1139ACSW Linear Technology LT1139A - Advanced Low Power 5V RS232 Drivers/Receivers with Small Capacitors (Includes LT1130 thru LT1141); Package: SO; Pins: 24; Temperature Range: 0°C to 70°C visit Linear Technology - Now Part of Analog Devices Buy

smd diode 1139

Catalog Datasheet MFG & Type PDF Document Tags

smd diode 1139

Abstract: NX DIODE SMD SCHOTTKY BARRIER DIODE 11A /50- 60V 10.4i.409) C10T05Q C10T06Q C10T06Q-11A \ 41 055> _ * ) I 21.047] 4 . s il g 9 > AM \ : z ~ f I0.6i.417i [ 9.6i 378« 10 11.39«) 8.51.335) o| SQUARE - PAK] TO-263AB (SMD) Packaged in 24mm Tape and Reel : C10T»*Q oTabless T0-220:C10T06Q-11A °Dual Diodes- Cathode Common 0 Low Forward Voltage Drop 1.81.071 r* ·2.751.108) . -> .35(925) 0 7 .0 3 9 1 ^ 1 , VR M = VRRM Test Condition Tj= 25 °C per diode leg Tj= 25°C per diode leg Max. 0.58 5.0 3.0
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OCR Scan
smd diode 1139 NX DIODE SMD s5u0 1461 smd S5U00

14N03LA

Abstract: smd diode 1139 Summary VDS RDS(on) max. SMD version ID 25 13.6 30 V A m Ideal for high-frequency dc/dc converters , =30A, VDD =25V, RGS =25 Reverse diode dv/dt IS =30A, VDS =20V, di/dt=200A/µs, Tjmax =175°C Gate , Thermal Characteristics Thermal resistance, junction - case SMD version, device on PCB: @ min. footprint , current VGS =20V, VDS=0V Drain-source on-state resistance VGS =4.5V, ID=20A VGS =4.5V, ID=20A, SMD , =10V, ID =30A VGS =10V, ID =30A, SMD version Gate resistance 2See figure 3. 3T =150°C for V jmax
Infineon Technologies
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IPI14N03LA IPB14N03LA 14N03LA 14N03L smd code diode 20a 14N03 IPP14N03LA Q67042-S4158 Q67042-S4156

14n03la

Abstract: smd diode 1139 Product Summary VDS RDS(on) max. SMD version ID 25 13.6 30 V A m Ideal for high-frequency dc/dc , =30A, VDD =25V, RGS =25 Reverse diode dv/dt IS =30A, VDS =20V, di/dt=200A/µs, Tjmax =175°C Gate , Parameter Thermal Characteristics Thermal resistance, junction - case SMD version, device on PCB: @ min , current VGS =20V, VDS=0V Drain-source on-state resistance VGS =4.5V, ID=30A VGS =4.5V, ID=30A, SMD , =10V, ID =30A VGS =10V, ID =30A, SMD version Gate resistance 2See figure 3. 3T =150°C for V jmax
Infineon Technologies
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Diode smd code 30a Q67042-S4157

STR 6750

Abstract: 11N60 BAV99 SOT-23 SMD (6862.5 2637.5) R0 D82 1N5408 DO201-15 DIODE (4531.25 4625 , , TDA16888, SiC Schottky diode, small signal N- & Pchannel MOSFETs. Contains 1 2 3 4 Features , - Silicon Carbide (SiC) Schottky diode as PFC diode - OptiMOS as synchronous rectification switches , semiconductors used are two CoolMOS SPB11N60C2 in parallel and a silicon carbide diode prototype SDB06S60 (6A , SMPS. It carries the power semiconductors (in SMD lead frame technology) and the passive devices of
Infineon Technologies
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STR 6750 11N60 TRANSISTOR SMD QP DK QP transistor SMD R1D ic 3525 pwm application dc to dc converter 6 PIN SMD IC FOR SMPS MOS-06 PL-03-821 RUS-125 S-164

SMD MOSFET DRIVE 4450 8 PIN

Abstract: A7 SMD TRANSISTOR BAV99 SOT-23 SMD (6862.5 2637.5) R0 D82 1N5408 DO201-15 DIODE (4531.25 4625 , diode thinQ!, small signal N- & Pchannel MOSFETs. Contains 1 2 3 4 Features / Parameters , - Silicon Carbide (SiC) Schottky diode thinQ! as PFC diode - OptiMOS as synchronous rectification , semiconductors used are two CoolMOS SPB11N60C2 in parallel and a silicon carbide diode prototype SDB06S60 (6A , SMPS. It carries the power semiconductors (in SMD lead frame technology) and the passive devices of
Infineon Technologies
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SMD MOSFET DRIVE 4450 8 PIN A7 SMD TRANSISTOR str 6750 smps power supply circuit transistor SMD DK SMD a7 Transistor transistor SMD DK rc

smd diode 1139

Abstract: , single pulse ID =30A, VDD =25V, RGS =25 #1; Reverse diode dv/dt IS =30A, VDS =20V, di/dt=200A/µs , - 100 SMD version, device on PCB: RthJA @ min. footprint - - 75 @ 6 cm2 , V GS=0V, VDS=15V, - 857 1139 Output capacitance Coss f=1MHz - 387 514 , Charge total, Sync. FET Qg(sync) V GS=0 to 5V, V DS=0.1V Gate plateau voltage Reverse Diode Inverse diode continuous TC=25°C forward current Inv. diode direct current, pulsed ISM
Infineon Technologies
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IPU13N03LA Q67042-S4160 13N03LA

IPD13N03LA

Abstract: 13n03la W °C Avalanche energy, single pulse ID =30A, VDD =25V, RGS =25 Reverse diode dv/dt IS =30A , resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 4 , Gate Charge total, Sync. FET Gate plateau voltage Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed Inverse diode forward voltage Reverse recovery charge 1See figure 16 Symbol Conditions min. Values typ. 38 857 387 69 6.6 7.5 18.4 3.4 max. 1139 514 104
Infineon Technologies
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IPD13N03LA Q67042-S4159

13n03la

Abstract: W °C Avalanche energy, single pulse ID =30A, VDD =25V, RGS =25 Reverse diode dv/dt IS =30A , , junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 4) Symbol , total, Sync. FET Gate plateau voltage Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed Inverse diode forward voltage Reverse recovery charge 1See figure 16 Symbol Conditions min. Values typ. 38 857 387 69 6.6 7.5 18.4 3.4 max. 1139 514 104 9.9 11.3 27.6 5.1 Unit
Infineon Technologies
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S4160 equivalent

Abstract: 13n03l , RGS =25 Reverse diode dv/dt IS =30A, VDS =20V, di/dt=200A/µs, Tjmax =175°C TC , resistance, junction - ambient, leaded RthJA - - 100 SMD version, device on PCB: RthJA @ , GS=0V, VDS=15V, - 857 1139 Output capacitance Coss f=1MHz - 387 514 , Charge total, Sync. FET Qg(sync) V GS=0 to 5V, V DS=0.1V Gate plateau voltage Reverse Diode Inverse diode continuous TC=25°C forward current Inv. diode direct current, pulsed ISM
Infineon Technologies
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S4160 equivalent 13n03l 13N03 s4160 fet to251

Q67042-S4160

Abstract: 13n03la /µs V W °C Avalanche energy, single pulse ID =30A, VDD =25V, RGS =25 Reverse diode dv/dt IS , Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 , Charge 1) Gate charge total Output charge Gate Charge total, Sync. FET Gate plateau voltage Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed Inverse diode forward voltage , 18.4 3.4 max. 1139 514 104 9.9 22 27.6 5.1 Unit gfs Ciss Coss Crss td(on) tr td(off) tf V DS2
Infineon Technologies
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C1904
Abstract: , single pulse ID =30A, VDD =25V, RGS =25 #1; Reverse diode dv/dt IS =30A, VDS =20V, di/dt=200A/µs , SMD version, device on PCB: RthJA @ min. footprint - - 75 @ 6 cm2 cooling area 4 , =15V, - 857 1139 Output capacitance Coss f=1MHz - 387 514 Reverse transfer , , Sync. FET Qg(sync) V GS=0 to 5V, V DS=0.1V Gate plateau voltage Reverse Diode Inverse diode continuous TC=25°C forward current Inv. diode direct current, pulsed ISM Inverse diode forward Infineon Technologies
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smd 27E

Abstract: MCP3041 drivers. They consist of a Gallium Arsenide infrared emitting diode optically coupled to a photosensitive , , MOC3041 Excellent Ift stability - IR emitting diode has low degradation. DIMENSIONS IN nrn , . 7500 VAC Peak (50-60Hz) INPUT DIODE Forward DC current. Reverse vo lta g e , TECHNOLOGIES INPUT DIODE Forward voltage VF AVf ' 1.3 -1.8 3.0 25 1.50 V m V/'C V PF PF IH=10/< A VF= 0 V , 1-139 (3UALITY TECHNOLOGIES CORP 57E D 74hbfl51 QaG3S0S Q VDE APPROVED ZERO-CROSSING TRIACS
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OCR Scan
MCP3031 smd 27E MCP3041 smd TRANSISTOR 27e c2075 transistor C2078 MCP3040 MCP3030 MCP3040/0Z AMCP3031 MCP3041/1Z MCP3032 MCP3042/2Z

irfp460 dc welding circuit diagram

Abstract: irfp450 mosfet full bridge .23 7.1.2 SMD cooling , .26 7.4.2 SMD cooling , recirculating current without external free-wheeling diode, e.g. electrical motor drive circuits for , 0.19 20 A TO-220 SMD (D²-PAK) TO-220 TO-247 SPP02N60S5 SPI07N60S5 SPW11N60C2 , SPU02N60S5 1.4 3.2 A 0.95 4.5 A 0.6 7.3 A TO-220 SMD (D²-PAK) SPB02N60S5 TO-262 I²-PAK
Infineon Technologies
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irfp460 dc welding circuit diagram irfp450 mosfet full bridge ZVT Full bridge transformer IGBT IGBT ZVT Full bridge lossless passive clamp flyback converter ZVT full bridge for welding MOS-02
Abstract: ; ï'±1 % SMD 0805 230 V Zener diode; 24 V SMD, SOD12 universal mains Zener diode; 18 V SMD, SOD12 230 V n.c - universal mains diode; PMEG6020EP SMD 80 230 , Semiconductors D5 diode; Zener; 24 V SMD; SOD123; BZT52H24B NXP Semiconductors D7 diode; 1N4148 SMD; SOD123 - D21 diode; ultra fast; ES1J; 1 A; 600 V DO-214AC On-semi D22 diode; 1N4148 SMD-80 - D23 n.c - - F1 fuse; slow blow; 1 A; 250 V (AC) à NXP Semiconductors
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UM10587 SSL2109AT SSL2109 SSL2109ADB1098 SSL2109ADB1099 2109AT

AN-CoolMOS-01

Abstract: AN-CoolMOS-04 0.19 20 A TO-220 SMD (D²-PAK) TO-262 I²-PAK TO-220 TO-247 SPP02N60S5 SPI07N60S5 , anti-parallel diode like a standard MOSFET? A: Yes, CoolMOS transistors have an internal anti-parallel diode (body diode). The performance of this diode is similar to that of standard MOSFETs. We do not recommend using CoolMOS in topologies that have freewheeling load current conducted in the body diode, and which switch the opposite transistor in the bridge leg on the conducting body diode. The recovered charge and
Infineon Technologies
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AN-CoolMOS-01 AN-CoolMOS-04 SPW17N80C2 MOSFET having TO-252 PAckage transistor SMD v1 MOSFET Bridge SMPS by IRFP460 MOS-07

VIPER53 EQUIVALENT

Abstract: PC817 opto coupler STPS1150 Schottky diode, DO214AC SMD 150V, 1A ST STPS1150A 40 D3 BAR18 Schottky diode , , SMB 100V, 2A SMD ST STPS2H100U 45 D9 ZMM9.1V/2% Zener diode SMD General , and leaves enough margin of reliability. The D4 diode and the D5 transil, clamp the leakage , . Diode D6 is found on the secondary side of the positive power supply, whilst diode D7 is found on the negative side. The polarization of the diode D8 has to be also changed. The positive power supply can
STMicroelectronics
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AN2426 VIPER53 EQUIVALENT PC817 opto coupler L78L33 L78L33 regulator 3.3v PC817 opto Resistor Fuse 4.91 53EDIP STEVAL-ISA023V1

STANDARD DIN 6784 SHEET METAL

Abstract: INFINEON PART MARKING to252 ://www.infineon.com SMD Packages Never stop thinking Edition January 2000 Published by Infineon Technologies , today use PCBs assembled with SMDtechnology, the emphasis is on Power-ICs in SMD packages mounted on , which can also be read during operation. In many products a substrate diode can be used at an output (Status, Reset, etc.) to measure the chip temperature. To do this, the forward voltage VF of the diode , calibration curve (measured at the diode at the reset output, pin 7). RO is illustrated in Figure 16
Infineon Technologies
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STANDARD DIN 6784 SHEET METAL INFINEON PART MARKING to252 P-TO263-7-3 Siemens Halbleiter characteristics aus Modern Electronic Semiconductor P-DSO-28-6 D-81541 B112-H7482-G1-X-7600

k B688

Abstract: ntc 103 DISC THERMISTOR NTC CHIP THERMISTOR NTC SMD THERMISTOR PTC SMD THERMISTOR NTC POWER THERMISTOR NTC DIODE THERMISTOR NTC CHIP IN GLASS THERMISTOR PTC THERMISTOR THERMISTOR SENSOR , 1.069 2.528 2.588 2.650 1.139 1.167 1.196 1.050 1.077 1.105 0.853 0.877 , % (25/85) = 4000Bk 1% 7 NTC SMD THERMISTOR NTC - 160808 103 F 3435 F T SYMBOL DIMENSION , 3800K 9 PTC SMD THERMISTOR PTC - 1608 221 P 070 T SYMBOL DIMENSION : 1608 size R VALUE
Samkyung Ceramics
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k B688 ntc 103 NTC 6D-22 transistor 8BB smd NTC Thermistor 100 KOhm 5D-18 E200822 B-225

P-TO263-7-3

Abstract: STANDARD DIN 6784 SHEET METAL ://www.infineon.com SMD Packages Never stop thinking Edition January 2000 Published by Infineon Technologies , emphasis is on Power-ICs in SMD packages mounted on single-sided PCBs laminated on one side. Pricing , which can also be read during operation. In many products a substrate diode can be used at an output (Status, Reset, etc.) to measure the chip temperature. To do this, the forward voltage VF of the diode , calibration curve (measured at the diode at the reset output, pin 7). RO is illustrated in Figure 16
Infineon Technologies
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sct595 siemens regulator marking SCT595-5-1 SMD marking DHS 4269G Optoelectronics Device data thermal resistance measurement

NTC16

Abstract: flyback transformer eldor normal operation the controller is powered by the transformer via the diode D4. The network Q101, C102 , diversity, as well as for the capacitors C1 to C3 and C19. The diode D8 needs a small heat sink, as , damps the oscillation produced by the diode D1 at MOSFET turn-on. The output voltage regulation is , ) Figure 4. Vin = 265 Vrms - 50 Hz, @FULL LOAD: DIODE PIV CH3: +35V DIODE: ANODE VOLTAGE; CH4: +12V DIODE: ANODE VOLTAGE CH3: +7V DIODE: ANODE VOLTAGE; CH4: +3V3 DIODE: ANODE VOLTAGE 5/35
STMicroelectronics
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AN1376 L6565 NTC16 flyback transformer eldor MKS1858-6-0-808 STP4NK60ZFP resistor pth pTH murata AN1376/0904
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