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106AXZ035M Illinois Capacitor Inc CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 35V, 10uF, SURFACE MOUNT, 2121, LEAD FREE visit Digikey Buy
106AVD035MDR Illinois Capacitor Inc CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID visit Digikey Buy
106AXZ025M Illinois Capacitor Inc CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 25V, 10uF, SURFACE MOUNT, 1717, LEAD FREE visit Digikey Buy
106AVD025MCR Illinois Capacitor Inc CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID visit Digikey Buy
106AVD050MER Illinois Capacitor Inc CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID visit Digikey Buy
106AXZ050M Illinois Capacitor Inc CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 50V, 10uF, SURFACE MOUNT, 2626, LEAD FREE visit Digikey Buy

smd diode 106a

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smd diode 106a

Abstract: smd 106a The BYG 90-90 is a S chottky barrier rectifier diode, fabricated in planar technology, and encapsulated in the rectangular S O D 106A plastic SMD package. · Guard ring protected · P lastic SM D , DISCRETE SEMICONDUCTORS GMTâ SlnlEET BYG90-90 Schottky barrier rectifier diode Product , barrier rectifier diode FEATURES · Low sw itching losses · High breakdow n voltage · C apability of , Ir s m Tstg Tj Notes 1. 2. R efer to S O D 106A standard m ounting conditions. For S chottky b
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smd diode 106a smd 106a

smd diode 106a

Abstract: smd 106a Philips Semiconductors Product specification Schottky barrier rectifier diode FEATURES · Low , time · Guard ring protected · Plastic SMD package. BYG90-90 DESCRIPTION The BYG90-90 is a Schottky barrier rectifier diode, fabricated in planar technology, and encapsulated in the rectangular SOD106A plastic SMD package. cathode identifier / - W - APPLICATIONS · Low power , rectifier diode ELECTRICAL CHARACTERISTICS Tamb = 25 °C; unless otherwise specified. SYMBOL VF PARAMETER
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SOD106A diode t37 very high current schottky diode philips Schottky diode schottky barrier smd Schottky Barrier Rectifier diode D1G3223

smd diode 106a

Abstract: DIODE MARKING B85 Philips Semiconductors Product specification Schottky barrier rectifier diode BYG90 , · Fast recovery time · Guard ring protected · Plastic SMD package. APPLICATIONS · Low power , barrier rectifier diode, fabricated in planar technology, and encapsulated in the rectangular SOD106A plastic SMD package. cathode identifier / Fig. 1 Simplified outline (SOD1Q6A) and symbol , Philips Semiconductors Product specification Schottky barrier rectifier diode ELEC TR IC AL
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01032B3 DIODE MARKING B85 smd diode byg byg 100 diode smd diode 1S B85 diode High voltage rectifier diodes SMD
Abstract: Bulletin I2210 03/05 SAFEIR Series 25ETS12SPbF INPUT RECTIFIER DIODE Lead-Free ("PbF" suffix , www.irf.com D2 Pak (SMD-220) 1 25ETS12SPbF SAFEIR Series Bulletin I2210 03/05 Voltage Ratings , 106° C, 180° conduction half sine wave Max. Peak One Cycle Non-Repetitive 250 Surge Current , ) Mounting surface, smooth and greased Kg-cm (Ibf-in) D2Pak (SMD-220) 25ETS12S www.irf.com , D Pak (SMD-220) Dimensions in millimeters and inches 2.54 (0.10) 2X Marking Information International Rectifier
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25ETS12SP SMD-220 25ETS

4N0605

Abstract: smd diode 106a DS 60 V R DS(on),max (SMD version) 5.4 m ID 80 A Features · N-channel - , - 1.4 Thermal resistance, junction ambient, leaded R thJA - - - 62 SMD , =80A, SMD version - 4.4 5.4 Rev. 1.0 page 2 2009-03-24 IPB80N06S4-05 IPI80N06S4 , =0 to 10V nC Reverse Diode Diode continous forward current2) IS Diode pulse current2) I S,pulse Diode forward voltage V SD V GS=0V, I F=80A, T j=25°C 0.6 0.95 1.3 V
Infineon Technologies
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IPI80N06S4-05 IPP80N06S4-05 PG-TO263-3-2 4N0605 107 10V smd smd diode marking DD PG-TO262-3-1 PG-TO220-3-1
Abstract: Bulletin I2210 03/05 SAFEIR Series 25ETS12SPbF INPUT RECTIFIER DIODE Lead-Free ("PbF" suffix , Document Number: 94342 D2 Pak (SMD-220) www.vishay.com 1 25ETS12SPbF SAFEIR Series Bulletin , Forward Current IFSM Conditions @ TC = 106° C, 180° conduction half sine wave Max. Peak One , ) D2Pak (SMD-220) 25ETS12S www.vishay.com 2 25ETS12SPbF SAFEIR Series 150 Maximum Allowable , ) 2X 2 D Pak (SMD-220) Dimensions in millimeters and inches 2.54 (0.10) 2X Marking International Rectifier
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Abstract: Bulletin I2158 rev. A 08/02 SAFEIR Series 25ETS.S INPUT RECTIFIER DIODE Description , 25°C TJ D2 Pak (SMD-220) (*) for higher voltage up to 1600V contact factory Document , Conditions @ TC = 106° C, 180° conduction half sine wave 10ms Sine pulse, rated VRRM applied 10ms Sine , surface, smooth and greased Kg-cm (Ibf-in) D2Pak (SMD-220) www.vishay.com 2 25ETS.S SAFEIR , (0.961) SMD-220 Tape & Reel When ordering, indicate the part number, part orientation, and the International Rectifier
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25ETS08S
Abstract: PD-94150A HFB25HJ20 HEXFRED Ultrafast, Soft Recovery Diode TM Features â'¢ â'¢ â'¢ â'¢ â'¢ VR = 200V Reduced RFI and EMI Reduced Snubbing Extensive Characterization of , 25 150 70 -55 to +150 Cathode to Anode Voltage Continuous Forward Current, Q TC = 106Â , CASE STYLE SMD-0.5 www.irf.com CATHODE ANODE ANODE 1 03/23/01 HFB25HJ20 , Definitions Case Outline and Dimensions â'" SMD-0.5 HEXFRED SINGLE DIE IR WORLD HEADQUARTERS: 233 International Rectifier
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Abstract: PD-94150B HFB25HJ20 Ultrafast, Soft Recovery Diode FRED Features â'¢ â'¢ â'¢ â'¢ â'¢ VR = 200V Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters , 70 -55 to +150 Cathode to Anode Voltage Continuous Forward Current, Q TC = 106°C Single Pulse , SMD-0.5 www.irf.com CATHODE ANODE ANODE 1 7/9/01 HFB25HJ20 Electrical , Waveform and Definitions Case Outline and Dimensions â'" SMD-0.5 IR WORLD HEADQUARTERS: 233 Kansas St International Rectifier
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Abstract: PD-94150 HFB25HJ20 HEXFRED Ultrafast, Soft Recovery Diode TM Features â'¢ â'¢ â'¢ â'¢ â'¢ VR = 200V Reduced RFI and EMI Reduced Snubbing Extensive Characterization of , 25 150 70 -55 to +150 Cathode to Anode Voltage Continuous Forward Current, Q TC = 106Â , CASE STYLE SMD-0.5 www.irf.com CATHODE ANODE ANODE 1 03/12/01 HFB25HJ20 , Waveform and Definitions Case Outline and Dimensions â'" SMD-0.5 HEXFRED SINGLE DIE IR WORLD International Rectifier
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p0603v24

Abstract: Paste Type No Clean Pad Protective Finish OSP (Entek Cu Plus 106A) Tolerance - Edge To , include transient voltage suppressor array (TVS arrays) avalanche breakdown diode, steering diode TVS array and electronics SMD chip fuses. These components deliver circuit protection in electronic systems
Protek Devices
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p0603v24 P0603V24 IEC61000-4-2
Abstract: Clean Pad Protective Finish OSP (Entek Cu Plus 106A) Tolerance - Edge To Corner Ball ±50Âum , voltage suppressor array (TVS arrays) avalanche breakdown diode, steering diode TVS array and electronics SMD chip fuses. These components deliver circuit protection in electronic systems from numerous Protek Devices
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DFN-0603
Abstract: ) 0.330mm Round Solder Paste Type No Clean Pad Protective Finish OSP (Entek Cu Plus 106A , include transient voltage suppressor array (TVS arrays) avalanche breakdown diode, steering diode TVS array and electronics SMD chip fuses. These components deliver circuit protection in electronic systems Protek Devices
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P0402V
Abstract: Plus 106A) Tolerance - Edge To Corner Ball ±50Âum Solder Ball Side Coplanarity ±20Âum , include transient voltage suppressor array (TVS arrays) avalanche breakdown diode, steering diode TVS array and electronics SMD chip fuses. These components deliver circuit protection in electronic systems Protek Devices
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smd diode 106a

Abstract: TRANSISTOR SMD MARKING CODE 7A ID =12.7 A , VDD =25V, RGS =25 Reverse diode dv/dt kV/us IS =12.7A, VDS =24V, di/dt=200A/us , resistance, junction - soldering point RthJS SMD version, device on PCB: K/W RthJA Electrical , VGS =4.5V, ID =10.6A Drain-source on-state resistance VGS =10V, ID=12.7A 1Device on 40mm*40mm , 5V Output charge Qoss VDS =15V, ID =12.7A, VGS =0 Gate plateau voltage Reverse Diode Inverse diode continuous TA=25°C forward current Inverse diode direct current, ISM pulsed
Infineon Technologies
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BSO4822 TRANSISTOR SMD MARKING CODE 7A Q67042-S4095

pn0307

Abstract: diode d v/dt IS=50A, VDS=24V, di/dt=200A/us, T jmax=175°C Gate source voltage Power dissipation TC , resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 3 , limited by bondwire ; with an RthJC = 1.1K/W the chip is able to carry ID= 106A at 25°C, for detailed , ) VDD =24V, ID =50A V Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge ISM VSD trr
Infineon Technologies
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pn0307 SPD50N03S2-07 PN0307 QS-0Z-2008 PD50N03S2-07 PG-TO252-3

smd diode 106a

Abstract: Q67042-S4166 =25°C Avalanche energy, single pulse mJ ID =-15 A , VDD =-25V, RGS=25 Reverse diode dv/dt kV/us IS , RthJC SMD version, device on PCB: K/W RthJA @ min. footprint @ 6 cm 2 cooling area 1 , on-state resistance VGS =-10V, ID =-10.6A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer , VDD =-80V, ID =-15A, nC VGS =0 to -10V Gate plateau voltage Reverse Diode Inverse diode continuous TA=25°C forward current Inv. diode direct current, pulsed ISM Inverse diode forward
Infineon Technologies
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SPP15P10P Q67042-S4166 P-TO220-3-1

BSO4822

Abstract: smd diode 106a energy, single pulse mJ ID =12.7 A , VDD =25V, RGS =25 Reverse diode dv/dt kV/us IS =12.7A , 50 Characteristics Thermal resistance, junction - soldering point RthJS SMD version, device , VGS =20V, VDS=0 Drain-source on-state resistance VGS =4.5V, ID =10.6A Drain-source on-state , Reverse Diode Inverse diode continuous TA=25°C forward current Inverse diode direct current, ISM pulsed Inverse diode forward voltage VSD VGS =0, IF=1.9A - 0.83 1.2 V
Infineon Technologies
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smd diode 106a

Abstract: =12.7 A , VDD =25V, RGS =25 Reverse diode dv/dt IS =12.7A, VDS =24V, di/dt=200A/us, Tjmax , Parameter Characteristics Thermal resistance, junction - soldering point SMD version, device on PCB: @ min , , VDS =0V Drain-source on-state resistance VGS =4.5V, ID=10.6A Drain-source on-state resistance , VDS =15V, ID =12.7A, VGS =0V V(plateau) VDD =15V, ID=12.7A V Reverse Diode Inverse diode continuous forward current Inverse diode direct current, pulsed Inverse diode forward voltage Reverse
Infineon Technologies
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Abstract: =-15 A , VDD =-25V, RGS=25 Reverse diode dv/dt IS =-15A, VDS =-48V, di/dt=-200A/us, Tjmax =150°C , Parameter Characteristics Thermal resistance, junction - case SMD version, device on PCB: @ min. footprint , resistance VGS =-10V, ID =-10.6A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 um , Gate charge total Gate plateau voltage Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed ISM Inverse diode forward voltage Reverse recovery time Reverse recovery Infineon Technologies
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PG-TO220-3 15P10P
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