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smd diode 106a

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Abstract: Philips Semiconductors Product specification Schottky barrier rectifier diode FEATURES · Low , time · Guard ring protected · Plastic SMD package. BYG90-90 BYG90-90 DESCRIPTION The BYG90-90 BYG90-90 is a Schottky barrier rectifier diode, fabricated in planar technology, and encapsulated in the rectangular SOD106A plastic SMD package. cathode identifier / - W - APPLICATIONS · Low power , rectifier diode ELECTRICAL CHARACTERISTICS Tamb = 25 °C; unless otherwise specified. SYMBOL VF PARAMETER ... OCR Scan
datasheet

4 pages,
183.79 Kb

smd 106a diode package outline BYG90-90 philips Schottky diode SOD106A smd diode 106a datasheet abstract
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Abstract: The BYG 90-90 is a S chottky barrier rectifier diode, fabricated in planar technology, and encapsulated in the rectangular S O D 106A plastic SMD package. · Guard ring protected · P lastic SM D , DISCRETE SEMICONDUCTORS GMTâ SlnlEET BYG90-90 BYG90-90 Schottky barrier rectifier diode Product , barrier rectifier diode FEATURES · Low sw itching losses · High breakdow n voltage · C apability of , Ir s m Tstg Tj Notes 1. 2. R efer to S O D 106A standard m ounting conditions. For S chottky b ... OCR Scan
datasheet

6 pages,
120.14 Kb

smd 106a smd diode 106a BYG90-90 BYG90-90 abstract
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Abstract: Philips Semiconductors Product specification Schottky barrier rectifier diode BYG90-90 BYG90-90 , · Fast recovery time · Guard ring protected · Plastic SMD package. APPLICATIONS · Low power , barrier rectifier diode, fabricated in planar technology, and encapsulated in the rectangular SOD106A plastic SMD package. cathode identifier / Fig. 1 Simplified outline (SOD1Q6A) and symbol. , Philips Semiconductors Product specification Schottky barrier rectifier diode ELEC TR IC AL ... OCR Scan
datasheet

4 pages,
104.15 Kb

smd diode byg 20 j smd diode byg 20 BYG90-90 High voltage rectifier diodes SMD DIODE MARKING B85 B85 diode smd diode 1S byg 100 diode SOD106A smd diode byg smd diode 106a BYG90-90 abstract
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Abstract: DS 60 V R DS(on),max (SMD version) 5.4 m ID 80 A Features · N-channel - , Thermal resistance, junction ambient, leaded R thJA - - - 62 SMD version, device on PCB , (on) V GS=10V, I D=80A - 4.7 5.7 m V GS=10V, I D=80A, SMD version - 4.4 , pF ns Gate Charge Characteristics2) V DD=48V, I D=80A, V GS=0 to 10V nC Reverse Diode Diode continous forward current2) IS Diode pulse current2) I S,pulse Diode forward voltage ... Original
datasheet

9 pages,
166.63 Kb

PG-TO263-3-2 IPP80N06S4-05 IPI80N06S4-05 IPB80N06S4-05 107 10V smd smd diode 106a 4N0605 PG-TO262-3-1 PG-TO220-3-1 IPB80N06S4-05 abstract
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Abstract: /µs V W °C Avalanche energy, single pulse ID =50A, VDD =25V, RGS =25 Reverse diode dv/dt IS , Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 , 1Current limited by bondwire; with an R thJC = 1.6K/W the chip is able to carry I D=106A. jmax GS , charge Gate Charge total, Sync. FET Gate plateau voltage Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed Inverse diode forward voltage Reverse recovery charge 1See ... Original
datasheet

8 pages,
309.65 Kb

05n03l D106A smd diode 106a IPD05N03LA IPD05N03LA abstract
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Abstract: , single pulse ID =-15 A , VDD =-25V, RGS=25 Reverse diode dv/dt IS =-15A, VDS =-48V, di/dt=-200A/ -200A/µs , Parameter Characteristics Thermal resistance, junction - case SMD version, device on PCB: @ min. footprint , resistance VGS =-10V, ID =-10.6A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm , Gate plateau voltage Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed ISM Inverse diode forward voltage Reverse recovery time Reverse recovery charge VSD trr Qrr VGS ... Original
datasheet

8 pages,
86.29 Kb

SPP15P10P P-TO220-3-1 SPP15P10P abstract
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Abstract: =12.7 A , VDD =25V, RGS =25 Reverse diode dv/dt IS =12.7A, VDS =24V, di/dt=200A/µs, Tjmax=150°C , Parameter Characteristics Thermal resistance, junction - soldering point SMD version, device on PCB: @ min. , , VDS =0V Drain-source on-state resistance VGS =4.5V, ID=10.6A Drain-source on-state resistance , to 5V VDS =15V, ID =12.7A, VGS =0V V(plateau) VDD =15V, ID=12.7A V Reverse Diode Inverse diode continuous forward current Inverse diode direct current, pulsed Inverse diode forward voltage ... Original
datasheet

8 pages,
109.13 Kb

BSO4822 BSO4822 abstract
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Abstract: Repetitive avalanche energy, limited by Tjmax 2) EAR 13 Reverse diode dv/dt dv/dt 6 Gate , ambient, leaded RthJA - - 100 SMD version, device on PCB: RthJA - - 75 - - , bondwire ; with an RthJC = 1.1K/W the chip is able to carry ID= 106A at 25°C, for detailed information see , =50A, nC VGS =0 to 10V Gate plateau voltage Reverse Diode Inverse diode continuous TC=25°C forward current Inv. diode direct current, pulsed ISM Inverse diode forward voltage ... Original
datasheet

8 pages,
268.21 Kb

SPD50N03S2-07 PG-TO252-3-11 INFINEON PART MARKING to252 BSPD50N03S2-07 ANPS071E INFINEON PART MARKING PN0307 SPD50N03S2-07 abstract
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Abstract: DD=25V, RGS=25 Repetitive avalanche energy, limited by Tjmax 2) Reverse diode d v/dt IS=50A, VDS=24V , ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 3) Symbol min. , bondwire ; with an RthJC = 1.1K/W the chip is able to carry ID= 106A at 25°C, for detailed information see , V Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge ISM VSD trr Qrr V GS=0V ... Original
datasheet

9 pages,
521.39 Kb

pn0307 SPD50N03S2-07 SPD50N03S2-07 abstract
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Abstract: ID =12.7 A , VDD =25V, RGS =25 Reverse diode dv/dt kV/µs IS =12.7A, VDS =24V, di/dt=200A/µs , resistance, junction - soldering point RthJS SMD version, device on PCB: K/W RthJA Electrical , VGS =4.5V, ID =10.6A Drain-source on-state resistance VGS =10V, ID=12.7A 1Device on 40mm*40mm , 5V Output charge Qoss VDS =15V, ID =12.7A, VGS =0 Gate plateau voltage Reverse Diode Inverse diode continuous TA=25°C forward current Inverse diode direct current, ISM pulsed ... Original
datasheet

8 pages,
103.65 Kb

BSO4822 TRANSISTOR SMD MARKING CODE 7A smd diode 106a Q67042-S4095 BSO4822 abstract
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