NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: Philips Semiconductors Product specification Schottky barrier rectifier diode BYG90-90 BYG90-90 FEATURES , • Fast recovery time • Guard ring protected • Plastic SMD package. APPLICATIONS • Low power , 90-90 is a Schottky barrier rectifier diode, fabricated in planar technology, and encapsulated in the rectangular SOD106A plastic SMD package. cathode identifier / Top view Fig.1 Simplified outline (SOD1Q6A , diode BYG90-90 BYG90-90 ELECTRICAL CHARACTERISTICS Tamb = 25 °C; unless otherwise specified. SYMBOL PARAMETER ... | OCR Scan |
4 pages, |
BYG90-90 SOD106A smd diode 106a BYG90-90 abstract |
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| Abstract: Philips Semiconductors Product specification Schottky barrier rectifier diode BYG90-90 BYG90-90 FEATURES , • Fast recovery time • Guard ring protected • Plastic SMD package. APPLICATIONS • Low power , Absolute Maximum Rating System (IEC 134). DESCRIPTION The BYG 90-90 is a Schottky barrier rectifier diode, fabricated in planar technology, and encapsulated in the rectangular SODIO6A plastic SMD package. cathode , Product specification Schottky barrier rectifier diode BYG90-90 BYG90-90 ELECTRICAL CHARACTERISTICS Tamb = 25 °C ... | OCR Scan |
4 pages, |
smd diode byg 20 j smd diode byg 20 High voltage rectifier diodes SMD BYG90-90 SOD106A smd diode 1S byg 100 diode smd diode byg smd diode 106a BYG90-90 abstract |
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| Abstract: DS 60 V R DS(on),max (SMD version) 5.4 m ID 80 A Features · N-channel - , Thermal resistance, junction ambient, leaded R thJA - - - 62 SMD version, device on PCB , (on) V GS=10V, I D=80A - 4.7 5.7 m V GS=10V, I D=80A, SMD version - 4.4 , pF ns Gate Charge Characteristics2) V DD=48V, I D=80A, V GS=0 to 10V nC Reverse Diode Diode continous forward current2) IS Diode pulse current2) I S,pulse Diode forward voltage ... | Original |
9 pages, |
PG-TO263-3-2 IPP80N06S4-05 IPI80N06S4-05 IPB80N06S4-05 smd diode 106a 107 10V smd 4N0605 PG-TO262-3-1 PG-TO220-3-1 IPB80N06S4-05 abstract |
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| Abstract: , single pulse mJ ID =-15 A , VDD =-25V, RGS=25 Reverse diode dv/dt kV/us IS =-15A, VDS , - - 75 - - 45 Characteristics Thermal resistance, junction - case RthJC SMD , =-10V, ID =-10.6A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 um thick) copper , plateau voltage Reverse Diode Inverse diode continuous TA=25°C forward current Inv. diode direct current, pulsed ISM Inverse diode forward voltage VSD VGS =0, |IF | = |IS | - -0.94 ... | Original |
8 pages, |
SPP15P10P Q67042-S4166 smd diode 106a PG-TO220-3-1 SPP15P10P abstract |
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| Abstract: TC=25°C Avalanche energy, single pulse mJ ID =-15 A , VDD =-25V, RGS=25 Reverse diode dv/dt , , junction - case RthJC SMD version, device on PCB: K/W RthJA @ min. footprint @ 6 cm 2 , =0 Drain-source on-state resistance VGS =-10V, ID =-10.6A 1Device on 40mm*40mm*1.5mm epoxy PCB , Reverse Diode Inverse diode continuous TA=25°C forward current Inv. diode direct current, pulsed ISM Inverse diode forward voltage VSD VGS =0, |IF | = |IS | - -0.94 Reverse recovery ... | Original |
8 pages, |
SPP15P10P Q67042-S4166 smd diode 106a SPP15P10P abstract |
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| Abstract: Repetitive avalanche energy, limited by Tjmax 2) EAR 13 Reverse diode dv/dt dv/dt 6 Gate , , leaded RthJA - - 100 SMD version, device on PCB: RthJA - - 75 - - 50 , bondwire ; with an RthJC = 1.1K/W the chip is able to carry ID= 106A at 25°C, for detailed information see , =50A, nC VGS =0 to 10V Gate plateau voltage Reverse Diode Inverse diode continuous TC=25°C forward current Inv. diode direct current, pulsed ISM Inverse diode forward voltage ... | Original |
8 pages, |
SPD50N03S2-07 BSPD50N03S2-07 ANPS071E pn0307 SPD50N03S2-07 abstract |
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| Abstract: energy, single pulse mJ ID =12.7 A , VDD =25V, RGS =25 Reverse diode dv/dt kV/us IS =12.7A , 50 Characteristics Thermal resistance, junction - soldering point RthJS SMD version, device , VGS =20V, VDS=0 Drain-source on-state resistance VGS =4.5V, ID =10.6A Drain-source on-state , voltage Reverse Diode Inverse diode continuous TA=25°C forward current Inverse diode direct current, ISM pulsed Inverse diode forward voltage VSD VGS =0, IF=1.9A - 0.83 1.2 ... | Original |
8 pages, |
BSO4822 Q67042-S4095 BSO4822 abstract |
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| Abstract: energy, single pulse mJ ID =12.7 A , VDD =25V, RGS =25 Reverse diode dv/dt kV/us IS , soldering point RthJS SMD version, device on PCB: K/W RthJA 10 sec. @ 6 cm 2 cooling area , Gate-source leakage current VGS =20V, VDS=0V VGS =4.5V, ID=10.6A Drain-source on-state resistance , charge Qoss VDS =15V, ID =12.7A, VGS =0V Gate plateau voltage Reverse Diode Inverse diode continuous TA=25°C forward current Inverse diode direct current, ISM pulsed Inverse diode ... | Original |
8 pages, |
BSO4822 BSO4822 abstract |
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| Abstract: EAS 250 Repetitive avalanche energy, limited by Tjmax 2) EAR 13 Reverse diode dv/dt , Thermal resistance, junction - ambient, leaded RthJA - - 100 SMD version, device on PCB , limited by bondwire ; with an RthJC = 1.1K/W the chip is able to carry ID= 106A at 25°C, for detailed , =50A, nC VGS =0 to 10V Gate plateau voltage Reverse Diode Inverse diode continuous TC=25°C forward current Inv. diode direct current, pulsed ISM Inverse diode forward voltage ... | Original |
9 pages, |
TO252 thermal character TO252 rthjc SPD50N03S2-07 ANPS071E smd diode 106a pn0307 SPD50N03S2-07 abstract |
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| Abstract: energy, single pulse mJ ID =-15 A , VDD =-25V, RGS=25 Reverse diode dv/dt kV/us IS =-15A , - - 75 - - 45 Characteristics Thermal resistance, junction - case RthJC SMD , =-10V, ID =-10.6A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 um thick) copper , plateau voltage Reverse Diode Inverse diode continuous TA=25°C forward current Inv. diode direct current, pulsed ISM Inverse diode forward voltage VSD VGS =0, |IF | = |IS | - -0.94 ... | Original |
8 pages, |
SPP15P10P 15P10P PG-TO220-3-1 SPP15P10P abstract |
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| .49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.70 0.93 0.027 0.037 B2 1.25 1.40 0.049 0.055 C 0.45 0 ST | ULTRA-FAST RECOVERY RECTIFIER DIODES STPR1620CG STPR1620CG STPR1620CG STPR1620CG ULTRA-FAST RECOVERY RECTIFIER DIODES Document Number: 4407 Date Update: 06/08/98 Pages: 5 The document is [ August 1998- Ed:1A ULTRA FAST RECOVERY RECTIFIER DIODES D 2 PAK (Plastic) SUITED FOR SMPS LOW LOSSES SMD PACKAGE DESCRIPTION ABSOLUTE MAXIMUM (limiting values) FEATURES L ow cost dual center tap www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/4407-v1.htm |
STMicroelectronics | 02/04/1999 | 5.3 Kb | HTM | 4407-v1.htm |
| .49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.70 0.93 0.027 0.037 B2 1.25 1.40 0.049 0.055 C 0.45 0 ST | ULTRA-FAST RECOVERY RECTIFIER DIODES STPR1620CG STPR1620CG STPR1620CG STPR1620CG ULTRA-FAST RECOVERY RECTIFIER DIODES Document Number: 4407 Date Update: 06/08/98 Pages: 5 The document is [ August 1998- Ed:1A ULTRA FAST RECOVERY RECTIFIER DIODES D 2 PAK (Plastic) SUITED FOR SMPS LOW LOSSES SMD PACKAGE DESCRIPTION ABSOLUTE MAXIMUM (limiting values) FEATURES L ow cost dual center tap www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/4407-v2.htm |
STMicroelectronics | 14/06/1999 | 5.26 Kb | HTM | 4407-v2.htm |
| . Typ. Max. A 4.30 4.60 0.169 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.70 0.93 0 ST | ULTRA-FAST RECOVERY RECTIFIER DIODES STPR1020CG STPR1020CG STPR1020CG STPR1020CG ULTRA-FAST RECOVERY RECTIFIER DIODES Document Number: 4405 Date Update: 12/03/96 Pages: 5 Format STPR1020CG STPR1020CG STPR1020CG STPR1020CG ) January 1996 ULTRA FAST RECOVERY RECTIFIER DIODES D 2 PAK (Plastic) SUITED FOR ENERGY CAPABILITY SMD PACKAGE DESCRIPTION ABSOLUTE MAXIMUM (limiting values) FEATURES Low cost dual www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/4405.htm |
STMicroelectronics | 02/04/1999 | 5.24 Kb | HTM | 4405.htm |
| . Typ. Max. A 4.30 4.60 0.169 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.70 0.93 0 ST | ULTRA-FAST RECOVERY RECTIFIER DIODES STPR1020CG STPR1020CG STPR1020CG STPR1020CG ULTRA-FAST RECOVERY RECTIFIER DIODES Document Number: 4405 Date Update: 12/03/96 Pages: 5 Format STPR1020CG STPR1020CG STPR1020CG STPR1020CG ) January 1996 ULTRA FAST RECOVERY RECTIFIER DIODES D 2 PAK (Plastic) SUITED FOR ENERGY CAPABILITY SMD PACKAGE DESCRIPTION ABSOLUTE MAXIMUM (limiting values) FEATURES Low cost dual www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/4405-v1.htm |
STMicroelectronics | 14/06/1999 | 5.2 Kb | HTM | 4405-v1.htm |
| .169 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.70 0.93 0.027 0.037 B2 1.25 1.40 0.048 0 F SMD PACKAGE FEATURES AND BENEFITS Dual center tap Schottky rectifier suited for Switch - Mode Power STPS3045CG STPS3045CG STPS3045CG STPS3045CG A1 A2 K Symbol Parameter Value Unit V RRM Repetitive peak reverse voltage Per diode 45 V I F(AV) Average forward current d = 0.5 Tc = 1355C 1355C 1355C 1355C Per diode Per device 15 30 A I F(RMS) RMS forward current Per diode 30 A I FSM Surge non repetitive forward current tp = 10 ms Sinusoidal Per diode 220 A I RRM www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3510-v2.htm |
STMicroelectronics | 14/06/1999 | 5.83 Kb | HTM | 3510-v2.htm |
| .169 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.70 0.93 0.027 0.037 B2 1.25 1.40 0.048 0 F SMD PACKAGE FEATURES AND BENEFITS Dual center tap Schottky rectifier suited for Switch - Mode Power STPS3045CG STPS3045CG STPS3045CG STPS3045CG A1 A2 K Symbol Parameter Value Unit V RRM Repetitive peak reverse voltage Per diode 45 V I F(AV) Average forward current d = 0.5 Tc = 1355C 1355C 1355C 1355C Per diode Per device 15 30 A I F(RMS) RMS forward current Per diode 30 A I FSM Surge non repetitive forward current tp = 10 ms Sinusoidal Per diode 220 A I RRM www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3510-v1.htm |
STMicroelectronics | 02/04/1999 | 5.87 Kb | HTM | 3510-v1.htm |
| .49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.70 0.93 0.027 0.037 B2 1.25 1.40 0.049 0.055 C 0.45 0 ST | HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES BYW51G-200 BYW51G-200 BYW51G-200 BYW51G-200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES Document Number: 4399 Date Update: 06/08/98 Pages: 5 Format BYW51G-200 BYW51G-200 BYW51G-200 BYW51G-200 [ August 1998 - Ed : 2A HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES D 2 PAK HIGH AVALANCHE ENERGY CAPABILITY SMD PACKAGE DESCRIPTION ABSOLUTE MAXIMUM RATINGS FEATURES Dual center www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/4399.htm |
STMicroelectronics | 02/04/1999 | 6.07 Kb | HTM | 4399.htm |
| F SMD PACKAGE FEATURES AND BENEFITS Dual center tap Schottky rectifier suited for Switch - Mode Power STPS2045CG STPS2045CG STPS2045CG STPS2045CG A1 A2 K Symbol Parameter Value Unit V RRM Repetitive peak reverse voltage Per diode 45 V I F(AV) Average forward current d = 0.5 TO-220AB / D 2 PAK Tc = 1355C 1355C 1355C 1355C Per diode 10 A ISOWATT220AB ISOWATT220AB ISOWATT220AB ISOWATT220AB Tc = 1205C 1205C 1205C 1205C Per device 20 I F(RMS) RMS forward current Per diode 30 A I FSM Surge non repetitive forward current tp = 10 ms Sinusoidal Per diode 180 A I RRM Repetitive peak reverse current tp = 2 m s F = 1KHz Per www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3506-v1.htm |
STMicroelectronics | 02/04/1999 | 6.96 Kb | HTM | 3506-v1.htm |
| F SMD PACKAGE FEATURES AND BENEFITS Dual center tap Schottky rectifier suited for Switch - Mode Power STPS2045CG STPS2045CG STPS2045CG STPS2045CG A1 A2 K Symbol Parameter Value Unit V RRM Repetitive peak reverse voltage Per diode 45 V I F(AV) Average forward current d = 0.5 TO-220AB / D 2 PAK Tc = 1355C 1355C 1355C 1355C Per diode 10 A ISOWATT220AB ISOWATT220AB ISOWATT220AB ISOWATT220AB Tc = 1205C 1205C 1205C 1205C Per device 20 I F(RMS) RMS forward current Per diode 30 A I FSM Surge non repetitive forward current tp = 10 ms Sinusoidal Per diode 180 A I RRM Repetitive peak reverse current tp = 2 m s F = 1KHz Per www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3506-v2.htm |
STMicroelectronics | 14/06/1999 | 6.92 Kb | HTM | 3506-v2.htm |
| F SMD PACKAGE FEATURES AND BENEFITS Dual center tap Schottky rectifier suited for Switch - Mode Power STPS1545CG STPS1545CG STPS1545CG STPS1545CG A1 A2 K Symbol Parameter Value Unit V RRM Repetitive peak reverse voltage Per diode 45 V I F(AV) Average forward current d = 0.5 TO-220AB / D 2 PAK Tc = 1355C 1355C 1355C 1355C Per diode 7.5 A ISOWATT220AB ISOWATT220AB ISOWATT220AB ISOWATT220AB Tc = 1205C 1205C 1205C 1205C Per device 15 I F(RMS) RMS forward current Per diode 20 A I FSM Surge non repetitive forward current tp = 10 ms Sinusoidal Per diode 150 A I RRM Repetitive peak reverse current tp = 2 m s F = 1kHz Per www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3503-v1.htm |
STMicroelectronics | 02/04/1999 | 6.97 Kb | HTM | 3503-v1.htm |