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Part Manufacturer Description Datasheet BUY
HSYE-117RH/PROTO Intersil Corporation 1.2 V-37V ADJUSTABLE POSITIVE REGULATOR, CBCC3, CERAMIC, SMD-5, LCC-3 visit Intersil
HSYE-117RH-8 Intersil Corporation 1.2 V-37V ADJUSTABLE POSITIVE REGULATOR, CBCC3, CERAMIC, SMD-5, LCC-3 visit Intersil
ISYE-1009RH-8 Intersil Corporation 1-OUTPUT TWO TERM VOLTAGE REFERENCE, 2.5V, BCC3, ROHS COMPLIANT, HERMETIC SEALED, SMD-3 visit Intersil
HSYE-117RH-Q Intersil Corporation 1.2 V-37V ADJUSTABLE POSITIVE REGULATOR, CBCC3, CERAMIC, SMD-5, LCC-3 visit Intersil
ISYE-1009RH-Q Intersil Corporation 1-OUTPUT TWO TERM VOLTAGE REFERENCE, 2.5V, BCC3, ROHS COMPLIANT, HERMETIC SEALED, SMD-3 visit Intersil
LM20C-EVAL Texas Instruments 2.4V, 10A, SC70, micro SMD Temperature Sensor visit Texas Instruments

smd UJ 99

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: â'¢ Available in both SMD and TH versions â'¢ Manufactured in ISO-9001 approved facility â , % ETOP (V-µSec) Max. DCR (Ohms) Energy Storage (µJ) 0.13 259 23.1 3.40 2 , 1.80 LM-259X-L4 0.25 79 9.9 1.50 2 SW_-0.30-55 LM-259X-L5 0.30 55 6.6 , _-0.56-55 LM-259X-L13 0.56 55 13.2 0.50 9 SW_-0.68-39 LM-259X-L14 0.68 39 9.9 , _-1.48-26 LM-259X-L24 1.48 26 9.9 0.10 28 SW_-1.81-18 LM-259X-L25 1.81 18 9.9 Amgis
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LM259X-L1 LM259X-L44 LM258X-L LM-259X-L1 LM-259X-L2 LM-259X-L3

SMD code l32

Abstract: smd transistor L33 · Available in both SMD and TH versions · Manufactured in ISO-9001 approved facility · Operating , _-0.13-259 National Part Number LN (µH) ± 20% ETOP (V-µSec) Max. DCR (Ohms) Energy Storage (µJ , 2 SW_-0.25-79 LM-259X-L4 0.25 79 9.9 1.50 2 SW_-0.30-55 LM , 55 13.2 0.50 9 9 SW_-0.68-39 LM-259X-L14 0.68 39 9.9 0.30 SW , _-1.2-38 LM-259X-L23 1.20 38 13.2 0.10 27 SW_-1.48-26 LM-259X-L24 1.48 26 9.9
Talema Electronic
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PE-54040 SMD code l32 smd transistor L33 L33 SMD L43 SMD SMD L31 smd transistor 2T LM-259X-L6 LM-259X-L7 LM-259X-L8 LM-259X-L9 LM-259X-L10 PE-53828S

swt engineering

Abstract: swt03017 Available in both SMD and TH versions · Manufactured in ISO-9001 approved facility · Operating temperature , (µJ) 0.13 National Part Number 259 23.1 3.40 2 SW_-0.16-178 LM , 9.9 1.50 2 SW_-0.30-55 LM-259X-L5 0.30 55 6.6 1.00 " C " & " T" S1 T1 , _-0.68-39 LM-259X-L14 0.68 39 9.9 0.30 9 SW_-0.84-26 LM-259X-L15 0.84 26 6.6 , 38 13.2 0.10 27 SW_-1.48-26 LM-259X-L24 1.48 26 9.9 0.10 28 SW
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swt engineering swt03017 30038 SW0161 SW013 SMD L44 PE-53830 PE-53831 PE-53830S PE-53831S LM259X-L30 LM259X-L31

smd transistor L33

Abstract: L37 smd with minimum saturation · High stability from no load to full load · Available in both SMD and TH , Current (iDC) LN (µH) ± 20% ETOP (V-µSec) Max. DCR (Ohms) Energy Storage (µJ) 0.13 , 79 9.9 1.50 2 SW_-0.30-55 LM-259X-L5 0.30 55 6.6 1.00 2 SW , _-0.68-39 LM-259X-L14 0.68 39 9.9 0.30 SW_-0.84-26 LM-259X-L15 0.84 26 6.6 0.20 , 38 13.2 0.10 27 SW_-1.48-26 LM-259X-L24 1.48 26 9.9 0.10 28 SW
Talema Electronic
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L37 smd SMD L30 SMD l34 Transistor smd transistor L44 PE53830S SMD l32 Transistor LM259X-L29 PE-53932 PE-53933 PE-53932S PE-53933S LM259X-L32

smd transistor L33

Abstract: smd transistor l6 · Available in both SMD and TH versions · Manufactured in ISO-9001 approved facility · Operating , _-0.13-259 National Part Number LN (µH) ± 20% ETOP (V-µSec) Max. DCR (Ohms) Energy Storage (µJ , 2 SW_-0.25-79 LM-259X-L4 0.25 79 9.9 1.50 2 SW_-0.30-55 LM , 55 13.2 0.50 9 9 SW_-0.68-39 LM-259X-L14 0.68 39 9.9 0.30 SW , _-1.2-38 LM-259X-L23 1.20 38 13.2 0.10 27 SW_-1.48-26 LM-259X-L24 1.48 26 9.9
Talema Nuvotem
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smd transistor l6 L6 smd transistor transistor L43 SMD smd transistor l32 SMD l33 Transistor 9 sw PE-53829S LM259X-L28 LM259X-L33 PE-53934 PE-53935 PE-53934S

smd transistor JJ

Abstract: SMD Transistor BM voltage 1 7 3 BUD630 1 Base 2 Collector 3 Emitter BUD630 -SMD 1 Base 2 Collector 3 Emitter Absolute , +150 °C Document Number 86503 Rev. 2, 20-Jan-99 www.vishay.de â'¢ FaxBack+1-408-970-5600 1 (9) BUD630 , www.vishay.de â'¢ FaxBack+1-408-970-5600 2 (9) Document Number 86503 Rev. 2, 20-Jan-99 wmmt _BUD630 Vishay , Rev. 2, 20-Jan-99 www.vishay.de â'¢ FaxBack+1-408-970-5600 3(9) wmmt BUD630 Vishay Telefunken IBI Vbb , www.vishay.de â'¢ FaxBack+1-408-970-5600 4(9) Document Number 86503 Rev. 2, 20-Jan-99 wmmf V BUD630 Vishay
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OCR Scan
smd transistor JJ SMD Transistor BM smd transistor 5c smd transistor 2a j high voltage TRANSISTOR SMD 1a 9

BUD636A

Abstract: voltage BUD636A -SMD 1 Base 2 Collector 3 Emitter Parameter Test Conditions Symbol Value Unit , Tstg -65 to +150 °C Document Number 86504 Rev. 2, 20-Jan-99 www.vishay.de â'¢ FaxBack+1-408-970-5600 1 , , 20-Jan-99 wmmf â¼ le Lç Vgl = 0 to 30 a) V(BR)CEO (BR)R(^|) BUD636A wmmt Vishay Telef unken t le t , characteristics - resistive load T -toff-' Document Number 86504 Rev. 2, 20-Jan-99 www.vishay.de â'¢ FaxBack , (9) Document Number 86504 Rev. 2, 20-Jan-99 wmmf V BUD636A Vishay Telefunken Typical Characteristics
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OCR Scan

BUD616A

Abstract: smd transistor JJ . BUD616A -SMD) www.vishay.de â'¢ FaxBack+1-408-970-5600 8(9) Document Number 86501 Rev. 1, 20-Jan-99 , +150 °C Document Number 86501 Rev. 1, 20-Jan-99 www.vishay.de â'¢ FaxBack+1-408-970-5600 1 (9 , 1.6 A hFE 4 www.vishay.de â'¢ FaxBack+1-408-970-5600 2 (9) Document Number 86501 Rev. 1, 20-Jan-99 , , 20-Jan-99 www.vishay.de â'¢ FaxBack+1-408-970-5600 3(9) mmm BUD616A Vishay Telefunken IBI Vbb ~J+ (1 , www.vishay.de â'¢ FaxBack+1-408-970-5600 4(9) Document Number 86501 Rev. 1, 20-Jan-99 wmmf V BUD616A Vishay
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OCR Scan
BUD616A-SMD HFE17 5c smd transistor smd transistor 5c p av 66

smd transistor ISS

Abstract: HA 1370* ic Storage temperature range Tstg -65 to +150 °C Document Number 86532 Rev. 1, 20-Jan-99 www.vishay.de â , '¢ FaxBack+1-408-970-5600 2(9) Document Number 86532 Rev. 1, 20-Jan-99 wmmt _BUD742 Vishay Telef unken , Number 86532 Rev. 1, 20-Jan-99 www.vishay.de â'¢ FaxBack+1-408-970-5600 3 (9) wmmt BUD742 Vishay , ) Document Number 86532 Rev. 1, 20-Jan-99 wmmf V BUD742 Vishay Telefunken Typical Characteristics (Tcase , Figure 9. hpE vs. Iq Document Number 86532 Rev. 1, 20-Jan-99 www.vishay.de â'¢ FaxBack
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OCR Scan
smd transistor ISS HA 1370* ic smd transistor 312 BUD742-SMD

smd diode UJ 64 A

Abstract: SLD3237VFR , sm, 5.6 mm 12,70 13,99 RLT9810G, 980 nm, 10 mW, sm, 9 mm 116,60 128,47 RLT9810GS , -0980-001w-33, 980 nm +/-10 nm, 1W, mm, TO3 99,00 109,08 LDM-0980-002w-15, 980 nm +/-10 nm, 2W, mm, C-mount , x 1 um², TO-46 99,00 109,08 PLD904-10-MG, 904 nm, 10 W-pulse, 150 x 1 um², 5.6 mm 68 , -1-9-PD, 1310+/-20 nm, 1 mW, DFB, 1.25 GB/s, sm, 9 µm fiber 216,00 237,99 SPL1310-2-9-PD, 1310+/-20 nm
Roithner LaserTechnik
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smd diode UJ 64 A SLD3237VFR 20/SPL1550-10-9-PD smd diode UM 08 SLD3237VF SLD3236VF RLU4116E RLT390-50CMG RLT395-50CMG RLT400-50CMG RLT405-50CMG DL-3146-151

0235

Abstract: EFD20 ELECTRICAL CHARACTERISTICS: Part NO. L (uH) TMP20039CS TMP20040CS TMP20041CS TMP20042CS TMP20043CS TMP20044CS TMP20045CS TMP20046CS TMP20047CS TMP20048CS 173 76.8 22.3 9.9 12 5.3 9.65 4.3 7.63 3.4 Isat A (typ) 0.14 0.20 1.05 1.60 1.96 2.95 2.43 3.63 3.07 4.59 Irms , 65.6 98.4 65.6 98.4 65.6 98.4 65.6 Epeak (uJ)typ 1.11 1.11 8.83 8.83 16.07 16.07 19.83 , FEATURES: SCHEMATIC SMD Style 29.0 max 22.7 ref 1 10.8 max 2.25 17.25 ref APPLICATIONS
Transtek Magnetics Electronics
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EFD20 0235 TMP20039-48CS TMD01049P
Abstract: Isolation Receive SMD P/N SMD P/N 2000V & 4000V RMS min. Isolation Versions Surface Mount , Am J J liLi UJ 111 111 L6J ill L3. Package Dimensions in Inches (mm) .920 .560 (14.22 , Custom Designs, contactfactory. 15 .740 (16. ec) .7 I c T s . o o ) J ISDNDULG -a/99 15801 -
OCR Scan
T-10500 T-10550 T-13550 T-13500 T-13551 T-13501

smd diode Uj 39

Abstract: smd code Diode U9 SMD Zener Diode CZRF2V4B-HF Thru CZRF39VB-HF Voltage 2.4 to 39 Volts Power 200 mWatts RoHS , Technology CO., LTD. Page 1 SMD Zener Diode Electrical Characteristics(Ta = 25C) Part Number , 9.33 5 10 5 600 0.25 0.1 7 CZRF10VB-HF UJ 9.75 10.25 5 15 5 , UN 12.68 13.32 5 25 5 600 0.25 0.1 9.9 CZRF15VB-HF UP 14.63 , . Page 2 SMD Zener Diode RATING AND CHARACTERISTIC CURVES (CZRF2V4B-HF Thru CZRF39VB-HF) 3 .6 4.3
Comchip Technology
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smd diode Uj 39 smd code Diode U9 1005/SOD-323F MIL-STD-750 QW-G2009

CZRF7V5B-HF

Abstract: CZRF10VB-HF SMD Zener Diode CZRF2V4B-HF Thru CZRF39VB-HF Voltage 2.4 to 39 Volts Power 200 mWatts RoHS , QW-G2009 Comchip Technology CO., LTD. SMD Zener Diode Electrical Characteristics(Ta = 25C) O , UJ 9.75 10.25 5 15 5 600 0.25 0.1 8 CZRF11VB-HF UK 10.73 11.27 , 9.9 CZRF15VB-HF UP 14.63 15.37 5 32 5 600 0.25 0.1 11 CZRF16VB-HF , Page 2 QW-G2009 Comchip Technology CO., LTD. SMD Zener Diode RATING AND CHARACTERISTIC CURVES
Comchip Technology
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CZRF7V5B-HF

SMD ZENER DIODE u5

Abstract: SMD ZENER DIODE u6 SMD Zener Diode CZRF2V4B Thru CZRF39VB Voltage 2.4 to 39 Volts Power 200 mWatts RoHS Device , ., LTD. Page 1 SMD Zener Diode Electrical Characteristics(Ta = 25C) Part Number Marking , 9.33 5 10 5 600 0.25 0.1 7 CZRF10VB UJ 9.75 10.25 5 15 5 , 12.68 13.32 5 25 5 600 0.25 0.1 9.9 CZRF15VB UP 14.63 15.37 5 , 0.25 0.1 30 REV:C QW-A2003 Comchip Technology CO., LTD. Page 2 SMD Zener Diode
Comchip Technology
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SMD ZENER DIODE u5 SMD ZENER DIODE u6

smd diode UJ 09

Abstract: smd diode marking UJ SMD Zener Diode CZRQR2V4B-HF Thru CZRQR39VB-HF Voltage 2.4 to 39 Volts Power 125 mWatts RoHS , ., LTD. Page 1 SMD Zener Diode Electrical Characteristics(Ta = 25C) Part Number Marking , 7 CZRQR10VB-HF UJ 9.75 10.25 5 15 5 600 0.25 0.1 8 CZRQR11VB-HF , 5 600 0.25 0.1 9.9 CZRQR15VB-HF UP 14.63 15.37 5 32 5 600 , 0.25 0.1 30 REV:A QW-G2013 Comchip Technology CO., LTD. Page 2 SMD Zener Diode
Comchip Technology
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smd diode UJ 09 smd diode marking UJ 0402/SOD-923F

SMD ZENER DIODE u5

Abstract: smd code Diode U9 SMD Zener Diode CZRER2V4B Thru CZRER39VB Voltage 2.4 to 39 Volts Power 150 mWatts RoHS Device , . SMD Zener Diode Electrical Characteristics(Ta = 25C) O Zener Voltage Rising operating , 0.25 0.1 7 CZRER10VB UJ 9.75 10.25 5 15 5 600 0.25 0.1 8 , 600 0.25 0.1 9.9 CZRER15VB UP 14.63 15.37 5 32 5 600 0.25 0.1 , 2 QW-A2011 Comchip Technology CO., LTD. SMD Zener Diode RATING AND CHARACTERISTIC CURVES
Comchip Technology
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0503/SOD-723F

smd code Diode U9

Abstract: SMD Zener Diode CZRU2V4B Thru CZRU39VB Voltage 2.4 to 39 Volts Power 150 mWatts RoHS Device , SMD Zener Diode Electrical Characteristics(Ta = 25C) O Zener Voltage Rising operating , 0.1 7 CZRU10VB UJ 9.75 10.25 5 15 5 600 0.25 0.1 8 CZRU11VB , 0.25 0.1 9.9 CZRU15VB UP 14.63 15.37 5 32 5 600 0.25 0.1 11 , 2 SMD Zener Diode RATING AND CHARACTERISTIC CURVES (CZRU2V4B Thru CZRU39VB) 3 .6 36 4.3
Comchip Technology
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0603/SOD-523F QW-A2004

smd code Diode U9

Abstract: SMD Zener Diode CZRFR2V4B-HF Thru CZRFR39VB-HF Voltage 2.4 to 39 Volts Power 200 mWatts RoHS , ., LTD. Page 1 SMD Zener Diode Electrical Characteristics(Ta = 25C) Part Number Marking , 7 CZRFR10VB-HF UJ 9.75 10.25 5 15 5 600 0.25 0.1 8 CZRFR11VB-HF , 5 600 0.25 0.1 9.9 CZRFR15VB-HF UP 14.63 15.37 5 32 5 600 , 0.25 0.1 30 REV:A QW-G2010 Comchip Technology CO., LTD. Page 2 SMD Zener Diode
Comchip Technology
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smd code Diode U9

Abstract: SMD Zener Diode CZRER2V4B-HF Thru CZRER39VB-HF Voltage 2.4 to 39 Volts Power 150 mWatts RoHS , ., LTD. Page 1 SMD Zener Diode Electrical Characteristics(Ta = 25C) Part Number Marking , 7 CZRER10VB-HF UJ 9.75 10.25 5 15 5 600 0.25 0.1 8 CZRER11VB-HF , 5 600 0.25 0.1 9.9 CZRER15VB-HF UP 14.63 15.37 5 32 5 600 , 0.25 0.1 30 REV:B QW-A2006 Comchip Technology CO., LTD. Page 2 SMD Zener Diode
Comchip Technology
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