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ISL99135BDRZ-T Intersil Corporation 35A DrMOS Module with Diode Emulation and PS4; QFN24; Temp Range: 0° to 70° visit Intersil
ISL99125BDRZ-T Intersil Corporation 25A DrMOS Module with Diode Emulation and PS4; QFN24; Temp Range: 0° to 70° visit Intersil
TPD4E004DSFR Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD3E001DRY Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
ISL58315CRTZ Intersil Corporation High Speed Triple Laser Diode Drivers; TQFN40; Temp Range: 0° to 70° visit Intersil Buy
ISL58303DRTZ-T7A Intersil Corporation 800mA Triple Output Laser Diode Driver; TQFN24; Temp Range: 0° to 70° visit Intersil Buy

smd JSs diode

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smd JSs diode

Abstract: smd JSs Diodes SMD Type Silicon Switching Diode Array BAW100 Unit: mm Features For high-speed switching Electrically insulated diodes A b s o lu t e M a x im u m R a t in g s T a = 2 5 P a ra m e , www.kexin.com.cn 1 Diodes SMD Type BAW100 Electrical Characteristics Ta = 25 Parameter Symbol , 2 JSs www.kexin.com.cn A 50 VR = 0 V, f = 1 MHz IF = 10 mA, IR = 10 mA, RL = 100 measured at IR = 1 mA Marking mV 1 30 VR = 75 V, TA = 150 Diode capacitance Unit 2
Kexin
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smd JSs diode smd JSs smd JSs 75 marking JSs smd JS smd JSs 85

smd JSs

Abstract: smd JSs diode ¥ NDO ] JS NÂ¥ N$OG ^ RSS N Inverse Diode C` BP I TKS L$ C`XY SK50GB065 C`XYI J : C`0%& C`GY *' I TS &-Â¥ 8(76 -.0, 3(F, V BP I TKS L$ JSS V Module C*;XYG> Preliminary , &f 00- SMg SMd &f SMWK hij XD%0 I TR c XD%66 I TR c O%66 X*8;P@-> ',2 CD=B , SK50GB065 Characteristics Symbol Conditions Inverse Diode N`S max. Units BP I JK L$)8.'7,Fa TMUK TMg N TMU TMgK N SMWK SMd BP I TJK L$ C`0%& I KS VÂ¥ NDO I S N typ
SEMIKRON
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smd JSs diode

Abstract: smd JSs transistor transistor in an 8-pin SOT96-1 (S08) SMD plastic package. CAUTION The device is supplied in an antistatic , . QUICK REFERENCE DATA SYMBOL V ds VsD V gso PARAMETER drain-source voltage (DC) source-drain diode , junction temperature Source-drain diode Is Ism source current (DC) peak pulsed source current Ts = 80 , UNIT V V nA nA - m£i mii mO pF pF C jss C oss C rss input capacitance output capacitance , -6 Q tbf tbf tbf tbf tbf tbf ns ns ns ns ns ns Source-drain diode VsD trr source-drain diode
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smd JSs transistor smd JSs 13 PHP1025

smd JSs 75

Abstract: smd JSs inductance REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS Tj = 25°C unless otherwise specified SYMBOL , Diode forward voltage Reverse recovery time Reverse recovery charge CONDITIONS MIN. - TYP. - , ra tin g 100 - 5.0 4.8 1 0 .0 - + 1 f y 4 .6 7. 0 - m 6. 0 -W _£ 4 V G S\V = , . Typical reverse diode current. iF = f(VS D S ); conditions: VGS= 0 V; param eter T} January 1999 5 , discharge during transport or handling. 2. Refer to SMD Footprint Design and Soldering Guidelines, Data
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BUK9606-55A transistor 5d smd SQT404

1RFZ48

Abstract: RFZ48 Avalanche Current © ;. . Repetitive Avalanche Energy © Peak Diode Recovery dv/dt ® Operating Junction and , Diode) Pulsed Source Current (Body Diode) © Diode Forward Voltage Reverse Recovery Time Reverse Recovery , reverse G -\ ` 290 - - s p-n junction diode. - - 2.0 V Tj=25°C, ls=72A, VGs=0V © - 120 180 ns Tj , . Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Ares 1298 m s . , . Gate Charge Test Circuit Appendix A: Figure 14, Peak Diode Recovery dv/dt Test Circuit - See page
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1RFZ48 RFZ48 RFZ4 IRFZ48 IRFZ48S
Abstract: '" C ass nA â'" C jss V ds= 4 0 0 V , V gs = 0 V , T j = 1 2 5 °C â'" Ls pA V , u rn -O n T im e show ing th e integral reverse p-n ju n ctio n diode. 18 V sd T est C , Diode Forward Voltage Fig 8. Maximum Safe Operating Area 46S 545 E QOElbOS 47S f IOR , Energy Vs. Drain Current Fig 13a. Basic Gate Charge Waveform Appendix A: Figure 14, Peak Diode , A Peak Diode Recovery dv/dt Test Circuit Fig 14. For N-Channel HEXFETs © Driver Gate Drive -
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IRF830S
Abstract: 6 Avalanche energy, periodic limited by 7jmax ÃAR 0.2 Reverse diode dv/df dv/df 6 , min. typ. max. fits 6 12 - S Qss - 650 815 PF Q jss - 300 , Reverse Diode Inverse diode continuous forward current A f A = 25 â'C Inverse diode direct current,pulsed r A = 25 "C Inverse diode forward voltage VGS = 0 V, /F = 12 A Reverse recovery time , parameter : 1/GS = Vd Sâ'™ fe = 30 pA Forward characteristics of reverse diode !p= ^(Vsd) parameter: 7 -
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SIS0005 Q67041-S4028 D133775 P-T0252-3-1 G13377 P-T0263-3-2/D2PAK
Abstract: limited by T|max Ear 0.036 Reverse diode d v/d t dv/dt 6 Gate source voltage V GS , . typ. max. 0.065 0.13 - S Q ss 15 19 pF Q jss 6 8 Q ss 2 3 , GS~ 0 to -10 V Gate plateau voltage V ^DD = *48 V, Id = -0.17 A Reverse Diode Inverse diode continuous forward current A f A = 25 °C Inverse diode direct current,pulsed f A = 25 °C â  Inverse diode forward voltage V qs = 0 V, \p = -0.34 A Reverse recovery time VR = -30 V -
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Q67041-S1417 0133G Q133777 SQT-89 D13377 D13377T

TA550

Abstract: RJH 30 E2 . . ±\fe Amp Bias Current. . . 10 mA Diode Bias Current , V ABV 1.5 Amplifier Bias Voltage 1.5 V (Note 4) Pin 2 wrt Pin 3,4 (Com), I 2« 2mA Diode Voltage 0.75 , lOnA J-SS*B I r /' / / 4 2 800 400 200 80 40 20 .S i V ) © " iS io M n 1MQ n «Ss , proportional to the differential voltage (\fo) applied at the InpCit according to: ·o" Sm^in+' Mn-) " Sm^D In , temperatures, the diode and transistor currents can be equated according to ^ I q « - is -VT ln ,wPu ' 9 T
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TA550 RJH 30 E2 transistor SMD 6b Y TRANSISTOR SMd jg data 14U3 VA703 VA2703

smd code book

Abstract: transistor SMD P1f 4k7+47k pnp dtr 4k7+47k PAD-100 100pA leakage diode MUN5316DW1 Mot http://www.marsport.org.uk/smd , series 3GHz pin diode Si diode 30V 0.2A dual series GP RF pin diode http://www.marsport.org.uk/smd , The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ The SMD , DG-DL DM-DS DT-DZ Other Info Codebook Introduction Abbreviations HP diode coding SOD-80 (Melf) diodes Plastic Melf/miniMelf Coloured SOD123/323 diodes SMD Electrolytics SMD Ceramic Capacitors SMD
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smd code book transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg Transistor SMD a7s smd transistor WW1 2SC3603 PDTA143ET SSTPAD10 SO2369R BST82 MRF5711L

MMBD2104

Abstract: Transistor NEC 05F SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers , - or three-character ID code. Identifying the manufacturers' type number of an SMD device from the , , usually these are 3/4 pin devices or RF circuits I'm interested in. How to use the SMD Codebook To identify a particular SMD device, first identify the package style and note the ID code printed on the , same ID code. This compilation has been collected from manufacturers' data and other sources of SMD
SMD Code Book
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MMBD2104 Transistor NEC 05F hp2835 diode what is the equivalent of ZTX 458 transistor ZENER DIODE t2d T2D DIODE 3w BC846A FMMT3904 BZV49 BZV55 BAS32 BAS45

SMD Codes

Abstract: TRANSISTOR SMD T1P THE SMD CODEBOOK SMD Codes. SMD devices are, by their very nature, too small to carry , number of an SMD device from the package code can be a difficult task, involving combing through many , or equivalents and pinout information. How to use the SMD Codebook To identify a particular SMD , ' data and other sources of SMD device ID codes, pinout and leaded device equivalent information. The , coloured letter (usually on extremely small diode packages). Colour, if significant, is shown in small type
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SMD Codes TRANSISTOR SMD T1P BAW92 schottky diode s6 81A smd transistor A6a a4s smd transistor BAV105 LL4148 LL4448 BB241 BB249 LL914

MMBD2103

Abstract: ZENER DIODE t2d THE SMD CODEBOOK SMD Codes. SMD devices are, by their very nature, too small to carry , number of an SMD device from the package code can be a difficult task, involving combing through many , or equivalents and pinout information. How to use the SMD Codebook To identify a particular SMD , ' data and other sources of SMD device ID codes, pinout and leaded device equivalent information. The , coloured letter (usually on extremely small diode packages). Colour, if significant, is shown in small type
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MMBD2103 MMBD2101 MMBD2102 bc107 TRANSISTOR SMD CODE PACKAGE SOT23 ZENER DIODE t2d 93 BAT15-115S LL4150 BB219 LL300 BA682 BA683 BA423L

transistor bc 564

Abstract: TRANSISTOR 131-6 BJ 946 (Konventionell zu SMD). 4. Kennwerte-Ubersicht I, II, III , Plastic Packages (Conventional Devices to SMD). 4. Table of Characteristics I, II, III , . 5.1 RF and AF Transistors and Diodes of SMD Packages. 5.2 RF , 0.35 0.35 0.38 - 580 0.35 _ 370 1.1 V br V SMD Plastic Package B A T , S O T -1 43 179 179 179 179 180 ' 2.2 Medium Barrier SMD Plastic Package BAS BAS
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transistor bc 564 TRANSISTOR 131-6 BJ 946 transistor Bc 949 datenblatt TRANSISTOR BC 545 DIODE smd marking 22-16 DATASHEET TRANSISTOR BC 545 B132-H6450-X-X-7400 B3-B3789 B3789-X-X-7600 B123- B6253-X-X-7600 B132-B6483-X-X-7400

isl 6251 schematic

Abstract: smd transistor A4S ) SOT-23 Maximum Ratings per Diode Parameter Symbol Values Unit Reverse voltage VR , . Semiconductor Group 1 07.94 BAR 14-1 . BAR 16-1 Electrical Characteristics per Diode at TA = 25 , Diode capacitance VR = 50 V, f = 1 MHz VR = 0, f = 100 MHz CT Forward resistance f = 100 MHz , resistance rf = f (IF) f = 100 MHz Semiconductor Group Diode capacitance CT = f (VR) 3 Silicon Switching Diode q BAR 74 For high-speed switching Type Marking Ordering Code (tape and reel
Siemens
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isl 6251 schematic smd transistor A4S Siemens OFW 361 smd marking b4h 6Bs smd transistor NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG Q62702-A772 Q62702-A731 Q62702-A773

irfb4115

Abstract: BTY79 equivalent BSR33TA 211409 Hybrid Transistors Arrays Bipolar + Diode Packages SMD Packages containing a bipolar , Leads: g2 SOT-103 d b TO-3 e e TO-5 b c Low Power Bipolar Transistors - SMD (Ptot to 1.0W , www.farnell.co.uk Over 500,000 products with real-time stock availability Low Power Bipolar Transistors - SMD , 270 220 250 270 270 300 300 300 300 220 220 82 150 200 200 PNP & NPN version Ultra small SMD package , products with real-time stock availability Low Power Bipolar Transistors - SMD (Ptot to 1.0W) - continued
Element14 Catalog
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irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g SSC-25 F155-6A F155-10A F165-15A F175-25A

transistor SMD s72

Abstract: MYS 99 , , (SMD). , , , . , , . . . , , , , PHILIPS SOD80. SOD15 SGS-Thomson 7043 SMC, (. 2 « (SMD)». SOD80 7343 SMC SOD15 , « (SMD)» 103, 10 , ­ 10 10 . 2R2, 2.2 , 2.2 . 107 0.1 , ), , . 11. (IEC) ­ . , SMD-, 8 . 1:23 182 , :0R6 ­ 80.6 . 12. SOT (SOD) ­ Small Outline Transistor (Diode) - « () ». SOT , , . , .
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transistor SMD s72 MYS 99 nec mys 501 st MYS 99 102 transistor 8BB smd kvp 81A BC818W MUN5131T1 SMBT3904 MVN5131T1 DO215

chw marking sot23

Abstract: sps 1951 transistor . 4 . . . . Diode A rray and Dual Diodes Diode A rra y s
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chw marking sot23 sps 1951 transistor trimmer electron 3296 bw 9028

transistors BC 557C

Abstract: BF366 â'Preferred Devices.â' â'¢ The Tuning, Hot Carrier, and PIN Diode Data Sheet section of the book has been
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transistors BC 557C BF366 SMD code 307C 2N5793 F199 transistor BC413
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