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Part Manufacturer Description Datasheet BUY
CS4340-KSZR Cirrus Logic 101 dB, 24-Bit, 96 kHz Stereo D/A Converter|101 dB, 24-bit, 192 kHz Stereo D/A Converter BUY
CS4340-KSR Cirrus Logic 101 dB, 24-Bit, 96 kHz Stereo D/A Converter|101 dB, 24-bit, 192 kHz Stereo D/A Converter BUY
CS4341-KSR Cirrus Logic 101 dB, 24-Bit, 96 kHz Stereo D/A Converter with Digital Volume Control|101 dB, 24-bit, 192 kHz Stereo D/A Converter with Digital Volume Control BUY
101 Keystone Electronics Corp 101 visit Digikey
MSP430-3P-INFIN-ADP-101-THINERGY Texas Instruments ADP-101 visit Texas Instruments
88-101 Grayhill Inc 88-101 visit Digikey

skm+50+gb+101+d

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: SEMITRANS® M IGBT Modules SKM 100 GB 101 D, 102 D â'ž SKM 100 GAL 101D, 102 D 6) SKM 100 GAR 101 D 6) SKM , A I I I I I I I ! I 1,SKM 100 GB 101 D / / / / / = 25 =125 , / / / / / / 3 Vp 1 2 V 3 . 38 a Diode forward characteristic HC 1 SKM 100 GB 101 D 1 , -1.SKM 100 GB 101 D 1 2 ol\M lF : 75A â'"VC0E= 600V IUU UD , I I I I ! I h 1 SKM 100 GB 101 D 2 SKM 100 GB 102 Dt VC0E= 600V 60 A 100 Fig. 42 a Diode -
OCR Scan
skm 100 gb 101 d Si 122D skm 100 gb 121d GAL 16 v 8 D DIP skm 100 gb 122 d skm 50 gb 101 d H2351 T-39-31
Abstract: GB 101 D SKM 40 GB 121 D SKM 50 GB 101 D SKM 50 GB 121 D SKM 75 GB 101 D SKM 75 GB 121 D SKM 100 GB 101 D SKM 100 GB 121 D DUALS SKM 100 GB 102 D SEMITRANS 3 SKM 100 GB 122 D 2) (62mm) SKM 100 GB 100 D SKM 150 GB 101 D 2) SKM 150 GB 102 D SKM 150 GB 121 D 2) SKM 150 GB 122 D SKM 150 GB 100 D 2) SKM 200 GB 101 D 2) SKM 200 GB 102 D SKM 200 GB 121 D 2) SKM 200 GB 122 D SINGLES , 100 D DUALS SKM 25 GB 100 D SEMITRANS 2 (34 mm) SKM 50 GB 100 D SKM 75 GB 100 D SK-BOOK '92 SEMIKRON
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SKM 75 Gb 124 IGBT SKM 25 GD SKM 400 gal 124 IGBT SKM 40 GD 121 D SKM 40 GD 101 D skm 75 gb 101 d
Abstract: SKM 200 GB 101 D 2 SKM 200 GB 102 D. -T) = 25*C 0 lF 50 100 150 A Fig. 42 a Diode turn-off energy , ,038 °c/w SEMITRANS® M IG BT Modules SKM 200 GB 101 D, 102 D â'ž SKM 200 GAL 101D, 102 D 6) SKM 200 GAR 101 D 6) SKM 200 GB 121 D, 122 D â'ž SKM 200 GAL 121 D, 122 D ®» SKM 200 GAR 121 D,122D6' â , Fig. 26 Turn-off safe operating area 250 a ! I I I I I I I I ^SKM 200 GB . D N 0 tcase 50 100 , current 102 nf 101 10° Ì â j-SKM 200 GB . D I I I I I I I I I I I I 0 vcg 10 20 30 v 40 Fig -
OCR Scan
skm 200 gb 122 d SKM 200 GB 102 D SKM 200 GB 12V SKM 150 GB 12V SKM 200 GB 102D skm 150 gal 122d G0D37G2 G00370 10-E1
Abstract: 101 D; 121 D 50 GAR 121 D 75 GAR 101 D; 121 D 100 GAR 101 D; 121 D 100 GAR 122 D 150 GAR 101 D; 121 D 150 GAR 122 D 200 GAR 101 D; 121 D 200 GAR 122 D 40 GB 101 D; 121 D 50 GB 101 D; 121 D 75 GB 101 D; 121 D 100 GB 101 D; 121 D 100 GB 102 D; 122 D 150 GB 101 D; 121 D 150 GB 102 D; 122 D 200 GB 101 D , SKM SKM SKM 40 G AL 101 D; 121 D 50 G AL 101 D; 121 D 75 G AL 101 D; 121 D 100 GAL 101 D 121 D 100 GAL , AR · SKM 101 RZR SKM 111 AR V 50 50 Tease j T j = 25 °C Tease = 25 °C = 25 C C ! max. I W A m -
OCR Scan
SKHI 20 semikron SKHI 22 AR skm 191 SKM284F skm 151 mosfet skm 22 gal 121 JI200
Abstract: SKM SKM SKM SKM SKM SKM 150 150 150 150 150 150 GB 101 D, 102 D â'ž GAL 101D, 102 D 6) GAR 101 D 6) GB 121 D, 122 D GAL 121 D, 122 D GAR 121 D, 122 D 6) V A A Characl eristics , I i 1 SKM 150 GB 101 D ~ 2 â'™ SKM 150 GB 102 D / A 1M i i i i i i i [ i / ~1 SKM 150 GB , SKM 150 GB 121 D 7 2 SKM 150 GB 122 D 'â'G > 1 SKM 150 GB 101 D 2 SKM 150 GB 102 D _/ T j , Maximum Ratings Sym bol VcES VcGR lc C onditions ' Values .101 D . 121 D . 102 D . -
OCR Scan
Abstract: 100 GB 101 D, 102 D GAL 101D, 102 D 6) GAR 101 D 6) GB 121 D, 122 D , GAL 121 D, 122 D J GAR 121 D , voltage y I - SKM Z I 100 GB I D / / / / / O lc 50 - 100 A 1 50 Fig. 30 Output , peak reverse recovery current (I f) B 6 - 115 1 SKM 100 GB 101 D 2 SKM 100 GB 102 D 0 - d i F , 5 EM I KRÖN © by SEMIKRON B 6 - 117 SKM 100 GB 101 D SKM 100 GB 121 D Case D 27 UL , se MIKRO n Absolute Maximum Ratings Sym bol VcES VcGR lc ICM Conditions ' Values . 101 D -
OCR Scan
SEMIKRON SKM 100 GAL 101D SKM 300 GB 12 V semikron skm 150 gb 122 SKM 100 Gb 101D skm 50 z 100 R SI 122 D
Abstract: 150 SKM 150 SKM 150 SKM 150 SKM 150 SKM 150 GB 101 D, 102 D GAL101D, 102 D 6) GAR 101 D 6) GB 121 D , 5 1/ - ^SKM 150 GB . D 1 0 Ic 25 50 A 150 Fig. 22 R ated p o w e r d is , ~ S K M 150 GB . D 50 100 A 150 0 lc 10° V C E 10' 102 103 V 1 04 Fig. 2 , \ r a l I SKM 150 GB 101 D L 2 SKM 150 GB 102 D I 160 - T i = 25-C - 1 SKM 150 GB , h a rg e - r'T r i t- r n - i n: 1 SKM 150 GB 101 D 2 SKM 150 GB 102 D 25 °C -
OCR Scan
skm 150 gb 122 skm 40 gb 124 d GAL10 lse-b6 SKM 121 R tic 122
Abstract: S K M 2 0 0 G B 101 D, 102 D SKM 200 GAL 101D, 1P2 D S K M 2 0 0 G A R 101 D SKM 200 GB 121 D, 122 D , ) 1 SKM 2 0 0 GB 121 D 2 SKM 2 0 0 GB 122 D 0 If 50 'C C 150 A 200 Fig. 42 a , SEMIKRON B 6 - 141 SKM 200 GB 101 D SKM 200 GB 121 D UL recognized, file no. E 63 532 SKM 200 , s e M IK R O N Sym bol V ces cr O C\J Conditions 1 1 Values . 101 D . 121 D .1 0 2 D , Diode .101 D, .102 D V f = V ec I f = 200 A , V g e = 0;(T,= 125 ° C ) 2 ,0 ( 1 , 8 ) 2,8 -
OCR Scan
SKM 200 GB 122 SEMIKRON SKM 22 GAL 121D skm 141 semikron rf3 122d
Abstract: 85 SKM 40 GB 101 D S K M 4 0 G B 121 D Case D 27 UL recognized, file no. E 63 532 -o 6 , s e MIKRD n Absolute Maximum Ratings Symbol VcES VcGR lc ICM V ges Ptot Values . 101 D , Modules SKM 40G B 101D e x SKM40 GAL 101 D J SKM40GAR 101 D 6) SK M 40G B 121D , SKM 40 GAL 121 D ° SKM , ,4 4) - - 1,2 4) 2 ,6 - Inverse Diode SKM 4 0 . 101 D If= 4 0 A , V g e = 0 ; (T J , energies 400 I t 1 M M M l . ·SKM 4 0 GB . D s \ \ \ \ \ \ \ \ \ \ \ 150 -
OCR Scan
SEMIKRON SKM 50 GAL 121D GE215 40GB101D skm 75 101 SK 70 KQ 16 SEMIKRON SEMIKRON+SKM+22+GAL+121D
Abstract: lâ'" iâ'" r -g-SKM 75 GB 101 D 500 7 50 1000 A /|is 1250 Fig, 41 b Diode peak , / - i - S K M 75 GB 101 D ! T=2 * j 5 / J I I / / J _ / z / I , VC C E * 6 0 0 V - VGE = 15V - g-SKM 75 GB 101 D ! 750 1000 I i ; 1 i , g-SKM 75 GB 121 D 1 zk- ¿â'¢SKM 75 GB 101 D A ~ Ip S 50A Vqqb s 600^ - I A , 532 SKM 75 GB 101 D SKM 75 GB 121 D 2.8x0.5 Case D 27 T-39-31 M5 G2 â'"o 6 â'"o -
OCR Scan
Abstract: I I - i - S K M 50 GB 101 D 1 T = 25*< j - 1 I I / / 2 ! / - i-S K , / / y 11 / k w H IS E K 6 1 Ip * 5 0 A ~ Id ? IN C T ~1-SKM 50 GB 101 D , n r r r r r l-S K M 50 GB 101 D â'" VCCE 8 60 °v 0 Fig. 42 a Diode turn-off energy , UL recognized, file no. E 63 532 SKM 50 GB 101 D SKM 50 GB 121 D 2.8x0.5 Case D 27 M5 , Diode . 101 D If= 50 A ,V g e = 0; (Tj=1 25 °C) T , = 25 °C 2) trr - Vce = 600 V Vge= 15V -
OCR Scan
Abstract: * iT Z j- S K M 0 Ip 10 20 30 50 GB 101 D 40 50 A 60 Fig. 40 a Diode peak reverse recovery , Class F 55/150/56 50 100 SEMITRANS® M IGBT Modules SK M 50G B 101D SKM 50 GAL 101 D b ) SKM 50G B , ) 250 2,5/10 1 Inverse Diode . . . 101 D V f = Vec If= 50 A, V g e = 0; (T= 125 °C) T = 25 °C ' trr T , / // / / , I I i I I II : I II I / 7 -S K M 50 GB 121 D Tj = 2 5 ' C I J ! / / / i L , 50 (ìB 101 D _ 29 Tj = 25 C - - Ti ^ 125 * c *' s - -L \ .A / / 47 1Ò -
OCR Scan
skm 50 z 50GB101D SK 200 GAR 125
Abstract: Values . 101 ' D , .1 2 1 D 1000 1000 I 1200 i 1200 40/25 80/50 ±20 300 - , D m SKM 40 GAL 101 D J SKM 40 GAR 101 D 6 ) SKM 40 GB 121 D â'ž SKM 40 GAL 121 D SKM 40 GAR , 00D3bSB h^S M S E K G SEMIKRON INC T - 3 9 -3 1 SKM 40 GB 101 D UL recognized, file no. E 63 , 4) _ â'˜ - -_ mWs Inverse Diode SKM 40 . 101 D o III > II u_ > trr Qrr , times and turn-off energies 4 00 II I I I I I I â'¢SKM 40 GB . D ~ â'" s \ â -
OCR Scan
B6-84
Abstract: 145 GAR 123 D 1200 SKM 150 GAR 123 D 1200 SKM 200 GAR 123 O 1200 SKM 300 GAR 123 D 1200 SKM 50 GB 123 D 1200 SKM 75 GB 123 D 1200 SKM 75 GB 173 D 1700 SKM 100 GB 123 D 1200 SKM 100 GB 173 D 1700 1200 SKM 145 GB 123 D SKM 150 GB 123 D 1200 SKM 150 GB 173 D 1700 SKM 200 G B 123 D 5* 1200 SKM 200 GB 173 D 6 ) 1700 1200 SKM 300 GB 123 O SKM 22 GD 123 D (L) SKM 40 GD 123 D (L) SKM 75 GO 123 0 (L , 1700 SKM 400 G A 123 D 5 ) 1200 SKM 400 G A 173 D 5 > 1700 SKM 500 G A 123 DS 1200 1200 SKM 50 G A L -
OCR Scan
D73 -Y SKM 22 GD 101 D skm 50 gb 100 d skm 40 gb 123 d semikron skm 300 gar 123 SKM 75 GB 123
Abstract: Circuii SKM 75 GB 128 ON 75 SEMITRANS 2 NI Dual SKM 100 GB 128 ON 100 SEMITRANS 2 NI Dual SKM 145 GB 128 ON 150 SEMITRANS 2 NI Dual SKM 200 GB 128 D 200 SEMITRANS 3 Dual SKM 300 GB 1280 300 SEMITRANS 3 Dual SKM 400 GB 1280 400 SEMITRANS 3 Dual SKM 400 GA 128 0 400 SEMITRANS 4 Single SKM 500 GA 1280 500 SEMITRANS 4 Singlo Tronc*' SKM 195 GB 126 ON 200 SEMITRANS 2 NI Dual SKM 600 GB 1260 SKM 800 GA 126 D 600 SEMITRANS 3 800 1 SBÃIRAW84 Dual Single ' prvtronory typ« v > k â'¢ *  -
OCR Scan
SKM 600 gb Semitrans skm 75 gb 100 SKM 300 CIRCUIT SKM 195 Gb 123 IGBT SKM 200 APPLICATION 22-9056X0
Abstract: . 101 D 1000 1000 I Conditions 1 Rge = 20 kQ Tease - 25/80 °C Tease = 25/80 °C . 121 D 1200 1200 Units V V A A V SEMITRANS® M IGBT Modules SK M 75G B 101D , SKM 75 GAL 101 D J SKM75 GAR 101 D 6) SKM 75 GB 121 D c. SKM 75 GAL 121 D SKM 75 GAR 121 D 6) per IG B T, Tease = 25 °C A C , 1 min D IN 40 040 iD IN IEC 68 T.1 humidity climate 75/50 150/100 ±20 500 - 5 5 . . .+ 150 2 , conditions © by SEMIKRON B 6 - 109 SKM 75 GB 101 D SKM 75 GB 121 D Case D 27 UL recognized -
OCR Scan
skm 75 gb 101d 75GB101D SK 50 GAL 065
Abstract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skm 40 gd 121 SKM 300 GA 102 D Semitrans M SKm 100 ga 121 d 1700V-Types SKM 200 GAL 162 D IGBT IGBT DRIVER SEMIKRON 1371RQ
Abstract: tp = 10 ms; sin.; Tj = 150 °C If s m l2t tp = 10 ms; T| = 150 °C f w d 6) 3 50 /23 0 6 00 , SEMITRANS® M IGBT Modules SKM 300 GB 123 D m SKM 300 GAL 123 D 6â'ž J SKM 300 G A R 1 2 3 D 6 , ) V f = V ec 6)2 £ BT^ SKM 300 GB 123 D. MO1 3O-1 M&SJ S 1800 w V 1600 1400 , equations © by SEMIKRON 0898 fll3bb?l QD07Sfl5 171 B 6 -171 SKM 300 GB 123 D. Icpuis = 300 , © by SEMIKRON â  Ã13bb71 0QD7SÃ4 T4M â  B 6 - 173 SKM 300 GB 123 D. SEMITRANS 3 Case -
OCR Scan
CASED56
Abstract: ,60/0,50 0,05 °c/w °c/w °c/w 0898 SEMITRANS 2 jf j f GB *>f GAL Features , inverse diodes of SKM 100 GB 123 D 7) Visoi = 4000 Vrms on request 8) CAL = Controlled Axial Lifetime Technology. Cases and mech. data -» B6 - 92 SEMITRANS 2 B 6 â'"87 SKM 75 GB 123 D. M075G123.XLS , characteristic, tp = 80 |is; Vce = 20 V 0898 B 6-89 SKM 75 GB 123 D. V g e [V] C [nF] 5 0 2 Q g 3 , Qir = f(di/dt) © b y SEMIKRON 0796 B 6-91 SKM 75 GB 123 D. SEMITRANS 2 CASED61 Case -
OCR Scan
semikron SKm GAL 123D
Abstract: IGBT Modules SKM 50 GB 123 D SKM 50 GAL 123 D SEMITRANS 2 2 As Characteristics Symbol , Technology. Case and mech. data B 6 - 22 SEMITRANS 2 B 6 ­ 17 SKM 50 GB 123 D . B 6 ­ 18 0796 © by SEMIKRON © by SEMIKRON 0796 B 6 ­ 19 SKM 50 GB 123 D . B 6 ­ 20 0796 © by SEMIKRON © by SEMIKRON 0796 B 6 ­ 21 SKM 50 GB 123 D . B 6 ­ 22 0796 © by , .1 . 123 D Units 1200 1200 50 / 40 100 / 80 ± 20 310 ­ 40 . . .+150 (125) 2 500 Class F SEMIKRON
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skm 152 ga 123 semikron skm 152 ga 123 SKM 75 GAL 123 IGBT skm 152 ga semikron skm 152 ga skm 22 gal 123 B6-106
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