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Part Manufacturer Description Datasheet BUY
1600092468A GE Critical Power J2014003L002 I2C SHELF FOR CP300 visit GE Critical Power
1600098385A GE Critical Power J2014003L001A I2C SHELF FOR CP30 visit GE Critical Power
J2014003L001A GE Critical Power J2014003L001A I2C SHELF FOR CP30 visit GE Critical Power
J2014003L002 GE Critical Power J2014003L002 I2C SHELF FOR CP300 visit GE Critical Power
JRCW016A0R GE Critical Power Orca series, Isolated DC-DC fully regulated, board-mounted power amplifier modules; Input Range: 48V (36V-75V); Vout: 28V; Iout: 16A; Efficiency: 0.94; : Orca series, Isolated DC-DC fully regulated, board-mounted power amplifier modules; Input Range: 48V (36V-75V); Vout: 48V; Iout: 9.4A; Efficiency: 0.94; : Orca series, Isolated DC-DC fully regulated, board-mounted power amplifier modules; Input Range: 48V (36V-75V); Vout: 28V; Iout: 18A; Efficiency: 0.91; : Orca series, Isolated DC-DC fully regulated, board-mounted power amplifier modules; Input Range: 48V (36V-75V); Vout: 28V; Iout: 25A; Efficiency: 0.9 visit GE Critical Power
FNW700R GE Critical Power Orca series, Isolated DC-DC fully regulated, board-mounted power amplifier Module; Input Range: 48V (36V-75V); Vout: 28V; Iout: 25A; Efficiency: 0.9 visit GE Critical Power

single transistor amplifier circuits

Catalog Datasheet MFG & Type PDF Document Tags

UPA101-104

Abstract: UPA101 application of both will be as a differential amplifier with emitter follower circuits using the 3 single , . The arrays have the following functions: UPA101: Two differential amplifier circuits are connected , transistors on a single substrate. Each transistor has an fT of 10 GHz. This Application Note discusses the , . UPA102: Contains two differential amplifier circuits. UPA103: Contains two transistors whose emitters , direct nitride deposition (DNP) process is used, mak- · Since the circuits are configured on a single
California Eastern Laboratories
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UPA101-104 UPA104 Transistor Array differential amplifier single phase inverters circuit diagram UPA101B RF TRANSISTOR NPN MICRO-X UPA101G AN-SI-1001 UPA101/102/103/104 UPA104B

transistor D 982

Abstract: TDA7050 /TRANSMISSION CIRCUITS PCA1070 TEA1060/1061 programmable analog CMOS transmission IC versatile telephone transmission circuits with dialler interface; TEA1060: low impedance input for dynamic and magnetic microphones , transmission circuits with dialler interface low-voltage versatile telephone transmission circuit with dialler , voltage mono/stereo power amplifier low voltage mono/stereo power amplifier 1 W BTL mono audio amplifier , CIRCUITS FOR LOUDSPEAKING FACILITIES TDA7050 TDA7050T TDA7052 TEA1081 TEA1083/A TEA1085/A TEA1093/T TEA1096
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transistor D 982 All Microphone TDA7052 Audio power amplifier IC piezoelectric mobile charger tda7052 ic TEA1061 BGY46A BGY46B BGY47A BGY95A/B BGY96A/B

CT914

Abstract: philips audio amplifier ic guide Philips Semiconductors Selection guide Functional index PAGE SPEECH/TRANSMISSION CIRCUITS PCA1070 TEA1060/1061 programmable analog CMOS transmission IC versatile telephone transmission circuits , versatile telephone transmission circuits with dialler interface low-voltage versatile telephone , 304 CIRCUITS FOR LOUDSPEAKING FACILITIES TDA7050 TDA7050T TDA7052 TEA1081 TEA1083/A TEA1085/A TEA1093 TEA1094 TEA1096/A low-voltage mono/stereo power amplifier low-voltage mono/stereo power amplifier
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CT914 CT918 philips audio amplifier ic guide Philips Semiconductors Selection Guide UMA1000LT P-Channel RF Amplifier TEA1062/A TEA1064A TEA1064B TEA1065 TEA1066T TEA1067

CA3600E

Abstract: RCA-CA3600E , "true-complementary" amplifier circuits using MOS transistors were seldom used. Now, CMOS transistor technology^ has , characteristics for amplifier circuits of Fig. 10 and Fig. 15. VDD'13V AMBIENT TEMPERATURE (TAI>25'C Rb â  22MÃ , . signal source. This generic amplifier is suitable for operation with a single or split voltage supply in , , for example, the p-channel transistor can be driven to cutoff and the amplifier supply current (Iqd , illustrates a voltage-transfer characteristic curve of a CMOS transistor pair connected in the amplifier
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CA3600 RCA-CA3600E CA3600E RCA-CA3080 rca CA3080 TRANSISTOR N2

op amp transistor current booster circuit

Abstract: teledyne-philbrick circuit or a deflection amplifier, there is little choice. However, often only a single direction of , decays and the voltage on the current-sinking transistor drops, the stress on the amplifier will subside , amplifier will current-limit, and the current carrying transistor will handle the full supply voltage. This , ELECTRONIC PRODUCTS Analog Circuits shown in Fig. c requires only one amplifier because the op amp's fet , this 120-W audio amplifier. The fuse protects against short circuits in the external output. justed
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op amp transistor current booster circuit teledyne-philbrick teledynephilbrick mje14 deflection yoke television piezoelectric amplifier circuits

AN5337 ca3028

Abstract: ca3028a 100MHz with single power supplies. This Note provides technical data and recommended circuits for use of , a single commonemitter transistor at 10.7MHz, and 10 times lower at 100MHz. As a result, the , from that for single, cascaded transistor stages in that lumped selectivity is required rather than , Application Note Introduction The CA3028A and CA3028B integrated circuits are singlestage differential amplifiers. Each circuit also contains a constant-current transistor and suitable biasing resistors. The
Intersil
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AN5337 AN5337 ca3028 trw rf transistor ca3028 AN5337 equivalent trw RF POWER TRANSISTOR CA3028 100MH 108MH

PA101B

Abstract: P10944EJ2V0AN00 differential amplifier with emitter follower circuits using the 3 single transistors. Figure 10 is a circuit , µPA101-104 transistor arrays have a number of NPN transistors with fT of approximately 10 GHz on a single , . The arrays have the following functions: · µPA101: Two differential amplifier circuits are connected internally to form a multiplication circuit. · µPA102: Contains two differential amplifier circuits. · , amplifier and three independent transistors for use in circuits such as emitter follower circuits. ·
NEC
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PA103 PA104 P10944EJ2V0AN00 PA101B PA102B MICRO-X TRANSISTOR MARK Q6
Abstract: for single supply operation. Three Class A amplifier stages, having the individual gain capability , same magnitude as those encountered in an operational amplifier employing a bipolar transistor input , SINGLE CONTROL) +15V FIGURE 26. CMOS TRANSISTOR ARRAY (CA3600E) CONNECTED AS POWER BOOSTER IN THE , m HARRIS CA5130 S E M I C O N D U C T O R BiMOS Microprocessor Operational Amplifier with , '¢ Ideal for Single Supply Applications â'¢ Common Mode Input Voltage Range Includes Nega­ tive Supply -
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CA5130A CA3130A CA3130 AN6668

CA3066

Abstract: Pmos transistor single supply operation. Three Class A amplifier stages, having the individual gain capability and , the amplifier is very high (e.g., when the amplifier output is used to drive CMOS digital circuits in , by the second amplifier stage, consisting of bipolar transistor 011 and its cascode connected load , an operational amplifier employing a bipolar transistor input stage. The 2V dc differential voltage , manufacturing lot. A single 15V supply provides a positive bus for the CA5130 follower amplifier and feeds the
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CA3066 Pmos transistor CA3088 tektronix 2230 adb voltage regulator CD4007 M3DS571 430S271 AN66M

ca3094 equivalent

Abstract: ca3080 agc which the full differential amplifier gm is converted to a single ended output. Because the , SINGLE ENDED CONVERSION CIRCUITS +V IABC 500µA 5 2K 7 3 DIFFERENTIAL INPUT + 6 , the feedback circuits of the power amplifier. Both systems assume the same noise input voltage at , constant multiple of the base to emitter voltage of a single transistor while maintaining a low , Corporation. [2] "A New Wide-Band Amplifier Technique," B. Gilbert, IEEE Journal of Solid State Circuits
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ca3094 equivalent ca3080 agc operational transconductance amplifier CA3080 equivalent 6077 riaa preamplifier circuit diagram 1-888-INTE CA3080 CA3094 AN6077 CA3080A ISO9000

IC1 CA3130

Abstract: ca3130 equivalent . Consequently, the CA5130 Series circuits are ideal for single supply operation. Three Class A amplifier stages , CA5130 is provided by the second amplifier stage, consisting of bipolar transistor Q11 and its cascode , amplifier employing a bipolar transistor input stage. The 2V dc differential voltage example represents , boost capability. In the circuit of Figure 26, three CMOS transistor pairs in a single CA3600E' IC array , Operational Amplifier with MOSFET Input/CMOS Output Description CA5130A and CA5130 are integrated circuit
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IC1 CA3130 ca3130 equivalent operational amplifier discrete schematic CA3066 LINEAR IC CA5130M A5130A

chip die npn transistor

Abstract: MM1007 micro­ power amplifiers to computer interface circuits. The close match in transistor parameters for , Transistor E le n d Each array cell contains a dual function structure consisting of a single base/single emitter small signal NPN transistor and an emitter pinch resistor utilizing the remaining two , PNP transistors. Each transistor contains a single emitter contact, two base contacts into a single , COMPONENT PERFORMANCE Transistor Performance Small NPN, 1X, 2X Parameter Useful Current Range Current
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chip die npn transistor MM1007 69X56 492KQ 69X81 602858F PS2314

BGY46B

Abstract: TRANSISTOR regulator /SA616 NE/SA620 NE/SA624 UHF power amplifier module UHF power amplifier module UHF power amplifier module UHF amplifier module UHF amplifier module UHF amplifier modules breakover diodes N-channel enhanchement mode vertical D-MOS transistor N-channel enhanchement mode vertical D-MOS transistor N-channel enhanchement mode vertical D-MOS transistor N-channei enhanchement mode vertical D-MOS transistor N-channel enhanchement mode vertical D-MOS transistor P-channel enhanchement mode vertical D-MOS transistor N-channel
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TRANSISTOR regulator fm 513 diode dtmf interface with microcontroller Analog Voice scrambler fm operational amplifier SA612 BGY110D/E/F/G BR211 BS107 BS108 BS170 BSN254/A

CA3080 equivalent

Abstract: 5W amplifier tone single, highly linear operational transconductance amplifier, the CA3080. Because of its extremely , amplifier, i.e., a circuit in which differential input to single ended output conversion can be realized , single ended output. Because the differential amplifier is ideal, its gm is directly proportional to , . SOME TYPICAL DIFFERENTIAL TO SINGLE ENDED CONVERSION CIRCUITS +V IABC 500A 5 2K 3 , amplifier stage (8 load) can be driven with peak currents of 35mA (assuming a minimum output transistor
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5W amplifier tone phonograph preamplifiers ca3080 amp phonograph preamplifiers ceramic schematic diagram in bass treble 2khz CROSSOVER circuit diagram 1-888C
Abstract: micro­ power amplifiers to computer interface circuits. The close match in transistor parameters for , PNP transistors. Each transistor contains a single emitter contact, two base contacts info a single , Pada Array Cell» Total Total Transistor* Restatane* Die Size (Mila) MMA 14 2 , OOllb'ifi T T-42-21 COMPONENT PERFORMANCE Transistor Performance Parameter Small NPN, 1X, 2X , geometry NPN transistors with either single or dual base/emitters. These NPN devices are the primary -
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NPN Monolithic Transistor Pair

Abstract: ULN2081A SPROGUE TRANSISTOR ARRAYS TYPE ULN-2054A DUAL INDEPENDENT DIFFERENTIAL AMPLIFIERS The ULN-2054A is a transistor array consisting of six NPN transistors on a single monolithic chip. The transistors , characteristics. Some applications are: cascade limiter circuits; balanced mixer circuits; balanced quadrature/synchronous detector circuits; balanced (push-pull) cascade/sense/IF amplifier circuits; or in almost any , applications, the ULN-2083A and ULS-2083H transistor arrays each consist of five NPN transistors on a single
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ULN-2081A ULN-2082A NPN Monolithic Transistor Pair ULN2081A ULN2082A ULN2083A ULN-2083

NJM4151

Abstract: bridge transducer USING OP-AMP amplifier input bias current should be low in relation to the emitter current of transistor temperature , includes ground. -2- Ver.2012-10-24 NJM4151 PRINCIPLE OF OPERATION Single Supply Mode , converter operating on a single positive power supply. Refer to Figure 1, the simplified block diagram. The , . Figure 1. Simplified Block Diagram, Single Supply Mode The NJM4151 VFC is easy to use and apply if you , initial current for zener diode Q39. The NPN transistor Q38 senses the zener voltage to derive the current
New Japan Radio
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bridge transducer USING OP-AMP Frequency-To-Voltage Conversion njm4151d NJM4151D NJM4151M

njm4151

Abstract: digital frequency meter circuit diagram vfc max b amplifier input bias current should be low in relation to the emitter current of transistor temperature , Ver.2011-07-05 NJM4151 PRINCIPLE OF OPERATION Single Supply Mode Voltage-to-Frequency Conversion , on a single positive power supply. Refer to Figure 1, the simplified block diagram. The NJM4151 , . Figure 1. Simplified Block Diagram, Single Supply Mode The NJM4151 VFC is easy to use and apply if you , initial current for zener diode Q39. The NPN transistor Q38 senses the zener voltage to derive the current
New Japan Radio
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digital frequency meter circuit diagram vfc max b 1270Hz njm555 strain gauge amplifier circuit

op amp 741 model PSpice

Abstract: pnp transistor 3609 interface circuits. The close match in transistor parameters for devices fabricated on the same chip also , contains a dual function structure consisting of a single base/single emitter small signal NPN transistor , areas contain dual collector lateral PNP transistors. Each transistor contains a single emitter contact , Material Copyrighted By Its Respective Manufacturer COMPONENT PERFORMANCE Transistor Performance , NPN transistors with either single or dual base/emitters. These NPN devices are the primary active
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op amp 741 model PSpice pnp transistor 3609 pnp npn dual emitter connected plessey capacitor DN660 MM-10004 89X81 1080K

Application Notes

Abstract: matched pair JFET circuit of Figure 3 also defines a basic single stage JFET amplifier. The source resistor value is , minor change to the circuit of Figure 3 describes a basic single stage low-noise JFET amplifier. Figure , Single Stage Amplifier with Source By-Pass Capacitor, CS VSS The JFET Differential Amplifier , InterFET Application Notes Introduction T he field effect transistor was actually conceived before the more familiar bipolar transistor. Due to limited technology and later the rapid rise of the
InterFET
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Application Notes matched pair JFET N CHANNEL jfet Low Noise Audio Amplifier igfet JFET APPLICATIONS
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