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Part Manufacturer Description Datasheet BUY
UC1610J/883B Texas Instruments SILICON, BRIDGE RECTIFIER DIODE visit Texas Instruments
UC3612J Texas Instruments SILICON, RECTIFIER DIODE visit Texas Instruments
UC3612DP Texas Instruments SILICON, RECTIFIER DIODE visit Texas Instruments

silicon carbide

Catalog Datasheet MFG & Type PDF Document Tags

silicon carbide

Abstract: TYPES: 0.3um ALUMINUM OXIDE, 8.5 x 1 1 1um ALUMINUM OXIDE, 8.5 x 11 5 u m SILICON CARBIDE, 8.5 x 1 1 1 5um SILICON CARBIDE, 8.5 x 11 C B A OBSOLETE OBSOLETE OBSOLETE OBSOLETE OBSOLETE OBSOLETE , SILICON CARBIDE, 5.5 x 8.5 1 O 2 1 5um SILICON CARBIDE, 8.5 x 11 1 00 1 0 1 5um SILICON CARBIDE, 4.5 x 11 1 0 1 0 1 00 15um SILICON CARBIDE, 8.5 x 11 1 00 1 00 1 00 1 0 1 0 1 0 MINIMUM ORDER QUANTITY 0.3um ALUMINU OXIDE,5.5 x8.5 1um ALUMINUM OXIDE, 8.5 x 11 5um SILICON CARBIDE, 4.5 x 1 1 1um
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OCR Scan

silicon carbide

Abstract: : 0.3um ALONINON OXIDE, 8.5 x 11 1um ALONINON OXIDE, 8.5 x 11 5um 5 IDI CON CARBIDE, 8.5 x 11 15um SILICON CARBIDE, 8.5 x 11 1 O Sum SILICON CARBIDE, 5.5 1 O O.3um ALONINON OXIDE,5.5 x8.5 15um SILICON CARBIDE, 8.5 1 1 00 um ALON I NOM OXIDE, 8.5 1 0 15um SILICON CARBIDE, 4.5 1 1 1 0 5um SILICON CARBIDE, 4.5 1 1 1 0 1 0 1 0 1 0 8 1 0 1 0 1 0 1 0 SHEETS PER PACKET 1um SILICON CARBIDE, 4.5 x 11 ~1 5um SILICON CARBIDE, 8.5 x 11 "5um SILICON CARBIDE, 8.5 x 11 1um ALONINOM OXIDE, 8.5 x 11 :_a_ 0 n 3 um ALUMINUM OXIDE
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L53BD

Abstract: BLUE Light emitting diode 233 g»Sl-^5)| multicomp T-1 (3mm)SILICON CARBIDE BLUE LED L-934BD BLUE L-934BT BLUE L , device is made with Silicon Carbide Blue Light Emitting Diode. Package Dimensions 02.8(0.11 ) 02.7 , Carbide (SiC) BLUE DIFFUSED 1.2 2.5 60° L-934BT Blue Silicon Carbide (SiC) BLUE TRANSPARENT 3.0 5.0 20° L-934BC Blue Silicon Carbide (SiC) WATER CLEAR 3.0 5.0 20° Note: 1 91/2 is the angle from optical , at TA=25°C Parameter Blue Silicon Carbide Units Power dissipation 105 mW DC Forward Current 50 mA
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OCR Scan
L53BD BLUE Light emitting diode silicon carbide silicon carbide LED LED L 934BC L-53BD L-53BT L-53BC

gallium nitride

Abstract: silicon carbide Gallium Aluminum Phosphide GaAsP/GaP - Gallium Arsenic Phosphide /Gallium Phosphide SiC/GaN - Silicon Carbide/Gallium Nitride SiC/GaN - Silicon Carbide/Gallium Nitride SiC/GaN - Silicon Carbide/Gallium , Phosphide/Gallium Phosphide SiC/GaN - Silicon Carbide/Gallium Nitride SiC/GaN - Silicon Carbide/Gallium Nitride SiC/GaN - Silicon Carbide/Gallium Nitride SiC/GaN - Silicon Carbide/Gallium Nitride SiC/GaN - Silicon Carbide/Gallium Nitride SiC/GaN - Silicon Carbide/Gallium Nitride GaN - Gallium Nitride ISO 9001
LEDtronics
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IR941 gallium nitride ultraviolet led 5mm 3000mcd nitride led 5mm 2000mcd IR881 IR851 PG350 AG10K UB500

led green Gallium phosphide

Abstract: silicon carbide /GaN - Silicon Carbide/Gallium Nitride SiC/GaN - Silicon Carbide/Gallium Nitride SiC/GaN - Silicon Carbide/Gallium Nitride InG aAlP - Indium Gallium Aluminum Phosphide InG aAlP - Indium Gallium Alum inum , - Gallium Phosphide/Gallium Phosphide SIC/GaN - Silicon Carbide/Gallium Nitride SiC/GaN - Silicon Carbide/Gallium Nitride SiC/GaN - Silicon Carbide/Gallium Nitride SiC/GaN - Silicon Carbide/Gallium Nitride SiC/GaN - Silicon Carbide/Gallium Nitride SiC/GaN - Silicon Carbide/Gallium Nitride GaN - Gallium
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led green Gallium phosphide 4500K 6500K 8000K UV405 UV395 UV750

W4PRE8F-0200

Abstract: W4TRD0R-0200 Silicon Carbide Substrates and Epitaxy Product Specications 4H Silicon Carbide Substrates N-type, P-type, and Semi-Insulating 6H Silicon Carbide Substrates N-type N-type and P-type Silicon , and 76.2 mm Silicon Carbide 50.8 mm Diameter 4H Silicon Carbide Part Number Type Orientation , Silicon Carbide Part Number Type Orientation Resistivity Ohm-cm Range Bin N 3.5° Off , -0D00 76.2 mm Diameter 4H Silicon Carbide Part Number Type Orientation Micropipe Density
Cree
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W4PRE8F-0200 W4TRD0R-0200 W6NRD0X-0D00 W4TRE0R-0200 W4NRE0X-0D00 W4TRF0R-0200

silicon carbide

Abstract: Blue Leds RESEARCH'INC The Leader in Silicon Carbide Solid State Technology Silicon Carbide Blue LEDs , Manufacturer Silicon Carbide Blue LEDs Sub-miniature Indicator C470-MC18 Typical Characteristics at If = , ) are not limited by the silicon carbide die, but by the LED junction temperature and its affect on the , of 125°C is not a limit of the silicon carbide die, but a limit of the sub-miniature packages , Material Copyrighted By Its Respective Manufacturer Silicon Carbide Blue LEDs Sub-miniature Indicator
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00E-6 Blue Leds CD-025 ESDM57 D000047 00E-5 00E-4 00E-3

arsenic

Abstract: silicon carbide Phosphide /Gallium Phosphide SiC/GaN - Silicon Carbide/Gallium Nitride SiC/GaN - Silicon Carbide/Gallium Nitride SiC/GaN - Silicon Carbide/Gallium Nitride InGaAIP - Indium Gallium Aluminum Phosphide InGaAIP - , Aluminum Phosphide GaP/GaP - Gallium Phosphide/Gallium Phosphide SiC/GaN - Silicon Carbide/Gallium Nitride SiC/GaN - Silicon Carbide/Gallium Nitride SiC/GaN - Silicon Carbide/Gallium Nitride SiC/GaN - Silicon Carbide/Gallium Nitride Super Pure Yellow 2.1 Yellow Incand White Pale White Cool White 2.1 3.6 3.6 3.6
LEDtronics
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arsenic

SEMISOUTH

Abstract: SDP10S120D Silicon Carbide SDP10S120D Product Summary Silicon Carbide Power Schottky Diode VDC IF , 2009 Symbol VRRM VDC Rev 1.3 Unit V A 1/6 Silicon Carbide SDP10S120D THERMAL , I R = f(V R ) Rev 1.3 2/6 Silicon Carbide SDP10S120D 15 50 PF(AV), Average Forward , ) Rev 1.3 3/6 Silicon Carbide SDP10S120D ZTH(jc), Transient Thermal Impedance ( oC/W , Silicon Carbide SDP10S120D DIM MILLIMETERS INCHES MIN MAX MIN MAX A 4.903
Semisouth Laboratories
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SEMISOUTH C2652 induction heating schematic

IJW120R

Abstract: SiC - JF ET Silicon Carbide- Junction Field Effect Transistor Cool Si C â"¢ 1200 V CoolSiCâ , ulti m ark et 1200 V Silicon Carbide JFET IJW120R070T1 Description CoolSiCâ"¢ is Infineonâ'™s new family of active power switches based on silicon carbide. Combining the excellent material properties of silicon carbide with our normally-on JFET concept allows the next steps towards higher , . 2.0, Silicon Carbide JFET IJW120R070T1 Description Table of Contents Description
Infineon Technologies
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IJW120R

SCS120AGC

Abstract: SCS112AGC Innovations Embedded Silicon Carbide Schottky Barrier Diodes Selection Guide ROHM MarketingUSA Presented by ROHM Semiconductor Silicon Carbide Schottky Barrier Diodes from ROHM Semiconductor Choosing Silicon Carbide Instead of Silicon Schottky barrier diodes (SBDs) have the advantage , that operate above 200 V have higher VF and trr. Silicon carbide (SiC) is a compound semiconductor , true for the most basic components in power electronics: diodes and transistors. Silicon carbide
ROHM
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CNA110004 SCS120AGC SCS112AGC SCS110AGC SCS108AGC 600 V power Schottky silicon carbide diode

silicon carbide

Abstract: infineon radar ­ when it's already here? It may be a fledgling technology, but silicon carbide is poised to make , design cycles. Which is precisely where silicon carbide comes in. A CUT ABOVE THE REST Silicon carbide is the third hardest substance known to man ­ diamond being the hardest. Silicon carbide , far-reaching performance enhancements to a wide variety of systems and applications. Silicon carbide offers a , silicon s silicon carbide 4 3 2 1 Bandgap (eV) Breakdown Field (MV/cm) Thermal
Infineon Technologies
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infineon radar P-2720-093 CH-8047 B112-H7799-X-X-7600 DK-2750

W6NRD0X-0000

Abstract: W4NRE0X-0D00 Effective December 1998 · Revised March 2003 · Page 1 Silicon Carbide Substrates Product Specifications 4H Silicon Carbide (n/p-type) 6H Silicon Carbide (n/p-type) Page 2 · Effective December 1998 · Revised March 2003 Properties and Specifications for Silicon Carbide Applications: · · · , Revised March 2003 Product Descriptions 4H-Silicon Carbide 50.8mm Diameter STANDARD MICROPIPE , 1998 · Revised March 2003 · Page 5 Product Descriptions 4H-Silicon Carbide 76.2mm Diameter
Cree
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W6NRD0X-0000 1E-18 W4TRD0R-0D00 Single side polished Si cree Sic W4NRD8C-U000

cree c470

Abstract: silicon carbide RESEARCH'INC The Leader in Silicon Carbide Solid State Technology Silicon Carbide Blue LEDs T , Material Copyrighted By Its Respective Manufacturer i Silicon Carbide Blue LEDs T-1, T-1 3/4 Typical , forward currents (dc and Peak) are not limited by the silicon carbide die, but by the LED junction , . The junction temperature limit of 125°C is not a limit of the silicon carbide die, but a limit of the , Forward Voltage (V) Silicon Carbide Blue LEDs T-1, T-1 3/4 Fig. 2. Relative Intensity vs. Wavelength
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OCR Scan
C470-5C18 C470-5D18 C470-5T18 C470-3C18 C470-3D18 C470-3T18 cree c470 C470 OG00053

Blue Leds

Abstract: cree c470 » R E S E A R C H * I N C Silicon Carbide Blue LEDs T-1, T-1 3/4 The Leader in Silicon Carbide Solid State Technology Features · Low Cost · High , Description Cree's C470 series silicon carbide blue LEDs have a typical power output of 24(iW (at 20mA) and , ,- ; i - COM Q REV. 3/95 550M57ti 0G00053 ?&b Silicon Carbide Blue LEDs T , package dependent. The forward currents (dc and Peak) are not limited by the silicon carbide die, but by
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silicon carbide LED cree 550M57 5S04S7L 000D0SS

circuit diagram of moving LED message display

Abstract: silicon carbide R E S E A R C H - I N C Silicon Carbide Blue LEDs C470-D9 The Leader in Silicon Carbide Solid State Technology Features · Low Cost · High Performance -24/iW , ? - Silicon Carbide Blue LEDs C470-D9 M a x im u m R a tin g s a t TA = 2 5 °C C470-D9 DC Forward , ratings are package dependent. The forward currents (dc and Peak) are not limited by the silicon carbide , silicon carbide die, but a limit of the T-l and T-l 3/4 packages used for characteriza tion. Junction
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circuit diagram of moving LED message display E5D457L 0D000M3 ES0457 Q000D4

circuit diagram of moving LED message display

Abstract: rgb led moving message display RESEARCH-INC The Leader in Silicon Carbide Solid State Technology Silicon Carbide Blue LEDs , Manufacturer Silicon Carbide Blue LEDs C470-D9 Maximum Ratings at TA = 25°C -^- A-â'" C470-D9 DC , silicon carbide die, but by the LED junction temperature and its affect on the package. Please refer to , of the silicon carbide die, but a limit of the T-l and T-l 3/4 packages used for characterization , Carbide Solid State Technology Silicon Carbide Blue LEDs C470-D9 Fig. 1. Forward Current vs. Forward
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OCR Scan
rgb led moving message display rgb led moving message display circuit 8x8 rgb led cree silicon carbide LED Silicon Carbide Blue LEDs 24/4W HEV12/94 ESD45 00D00M3 00E-2

silicon carbide

Abstract: silicon carbide LED Phosphide SiC/GaN - Silicon Carbide/Gallium Nitride SiC/GaN - Silicon Carbide/Gallium Nitride SiC/GaN - Silicon Carbide/Gallium Nitride InGaAIP - Indium Gallium Aluminum Phosphide InGaAIP - Indium Gallium , Phosphide GaP/GaP - Gallium Phosphide/Gallium Phosphide SiC/GaN - Silicon Carbide/Gallium Nitride SiC/GaN - Silicon Carbide/Gallium Nitride SiC/GaN - Silicon Carbide/Gallium Nitride SiC/GaN - Silicon Carbide
LEDtronics
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PT301 PT302 12/14V PT301-W CW900 PT301-T

MOSFET 1000 VOLTS

Abstract: QJD1210006 ) 925-7272 Silicon Carbide MOSFET Module 100 Amperes/1200 Volts A Y D K K K Y F , MOSFET Silicon Carbide Transistors in half-bridge configuration with each transistor having a reverse connected fast recovery free-wheel silicon carbide Schottky diode. All components and interconnects are , . Features: £ Junction Temperature - 200°C £ Silicon Carbide Chips £ Industry Leading RDS(on) £ High , ) 925-7272 QJD1210006 Silicon Carbide MOSFET Module 100 Amperes/1200 Volts Absolute Maximum Ratings, Tj
Powerex
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MOSFET 1000 VOLTS MOSFET 20V 100A schottky diode 100A mosfet transistor 800 volts.300 amperes

1200-VOLT

Abstract: silicon carbide ) 925-7272 www.pwrx.com Silicon Carbide MOSFET Module 100 Amperes/1200 Volts A Y K D K K Y F U , : Powerex Silicon Carbide MOSFET Modules are designed for use in high frequency application. Each module consists of two MOSFET Silicon Carbide Transistors in half-bridge configuration with each transistor having a reverse connected fast recovery free-wheel silicon carbide Schottky diode. All components and , management. Features: £ Junction Temperature - 200°C £ Silicon Carbide Chips £ Industry Leading RDS(on) £
Powerex
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1200-VOLT c 103 mosfet
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