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LT1188CT Linear Technology IC 3.5 A BUF OR INV BASED PRPHL DRVR, PSFM5, TO-220, 5 PIN, Peripheral Driver visit Linear Technology - Now Part of Analog Devices
LT1080MJ/883 Linear Technology LT1080 - Advanced Low Power 5V RS232 Dual Driver/Receiver; Package: CERDIP; Pins: 18; Temperature: Military visit Linear Technology - Now Part of Analog Devices
LT3593ES6#PBF Linear Technology IC LED DISPLAY DRIVER, PDSO6, LEAD FREE, PLASTIC, MO-193, TSOT-23, 6 PIN, Display Driver visit Linear Technology - Now Part of Analog Devices
LT1188CK Linear Technology IC 3.5 A BUF OR INV BASED PRPHL DRVR, MBFM4, METAL CAN, TO-3, 4 PIN, Peripheral Driver visit Linear Technology - Now Part of Analog Devices
LT1188MK Linear Technology IC 3.5 A BUF OR INV BASED PRPHL DRVR, MBFM4, METAL CAN, TO-3, 4 PIN, Peripheral Driver visit Linear Technology - Now Part of Analog Devices
LT1739IUE#PBF Linear Technology LT1739 - Dual 500mA, 200MHz xDSL Line Driver Amplifier; Package: DFN; Pins: 12; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

silicon PIN photodiode driver

Catalog Datasheet MFG & Type PDF Document Tags

IR photodiode sensor

Abstract: Photodiode Array linear ) ELEMENT PIN SILICON PHOTODIODE ARRAY S3805, S4529 256ch parallel readout allows high-speed 2-D photometry The 16 X 16(256) elem ent PIN photodiode arrays are developed specifically for high-speed 2 , Photodiode Arrays/Linear Image Sensors ( 16-ELEMENT SILICON PHOTODIODE ARRAY S5668 SERIES For various measuring purpose This photodiode consists of 16 elem ents of Silicon Photodiode having active , 35, 38 and 46-ELEMENT PHOTODIODE ARRAYS For multichannel spectrophotometry T hese lin e a r
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C4351 IR photodiode sensor Photodiode Array linear C2334 silicon linear photodiode array linear array photodiode element photodiode linear array 256 S4111
Abstract: switch B 8 Vofd 7 Vdd A 1.0 μm Vofg 3 Oxidation silicon GND 5 Dummy photodiode Photodiode array Dummy photodiode 6 GND Anti-blooming switch N-type silicon KMPDC0488EA 1.0 , photodiode consisting of an N-type diffusion region formed on a P-type silicon substrate. The readout , ) as Q, V = Q/Cf ······(1) Photodiode potential [Figure 12] External driver circuit , spectral range. MOS shift register Clock pulse Video line Switch Photodiode 1 2 3 Hamamatsu
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S10121 S10124 S3901 S3904 KMPDC0057EA D-82211

S3903

Abstract: silicon photodiode array , excellent linearity, low power consumption NMOS linear image sensors are self-scanning photodiode arrays , N-channel MOS transistors, operates at low power consumption and is easy to handle. Each photodiode has a , 1 Clock 2 Degital shift register (MOS shift register) Active photodiode End of scan , silicon N type silicon 1.0 µm KMPDC0020EA 400 µm Dummy diode P type silicon S3902 , pin Window material Weight S3902512Q 512 40.6 S3903S3903256Q 512Q 256 512 31.75 22
Hamamatsu Photonics
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S3903 S3902-128Q S3902-256Q S3903-256Q S3902-512Q S3903-512Q silicon photodiode array S3903-1024Q S3902/S3903
Abstract: transistor array that addresses each photodiode, all integrated onto a monolithic silicon chip. Figure 1 , , excellent linearity, low power consumption NMOS linear image sensors are self-scanning photodiode arrays , N-channel MOS transistors, operates at low power consumption and is easy to handle. Each photodiode has a , SCAN Figure 2 Active area structure ACTIVE PHOTODIODE ACTIVE VIDEO Vss SATURATION CONTROL , SILICON KMPDC0020EA N TYPE SILICON P TYPE SILICON S3902 SERIES: a=50 µm, b=45 µm S3903 SERIES: a Hamamatsu Photonics
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SE-171 KMPD1043E01
Abstract: , excellent linearity, low power consumption NMOS linear image sensors are self-scanning photodiode arrays , N-channel MOS transistors, operates at low power consumption and is easy to handle. Each photodiode has a , PHOTODIODE Vss b SATURATION CONTROL GATE SATURATION CONTROL DRAIN 1.0 µm a DUMMY VIDEO OXIDATION SILICON N TYPE SILICON 1.0 µm KMPDC0020EA 400 µm DUMMY DIODE P TYPE SILICON , pixels Package length Number of pin Window material *3 Weight *3: Fiber optic plate is available Hamamatsu Photonics
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C8225

Abstract: hamamatsu 256 channel photodiode array that addresses each photodiode, all integrated onto a monolithic silicon chip. Figure 1 shows the , , excellent linearity, low power consumption NMOS linear image sensors are self-scanning photodiode arrays , N-channel MOS transistors, operates at low power consumption and is easy to handle. Each photodiode has a , PHOTODIODE Vss b SATURATION CONTROL GATE SATURATION CONTROL DRAIN 1.0 µm a DUMMY VIDEO OXIDATION SILICON N TYPE SILICON 1.0 µm KMPDC0020EA 400 µm DUMMY DIODE P TYPE SILICON
Hamamatsu Photonics
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C8225 hamamatsu 256 channel photodiode linear uv photodiode array high frequency linear cmos IMAGE SENSOR

S3921

Abstract: S3921-128Q photodiode arrays designed specifically as detectors for multichannel spectroscopy. The scanning circuit is , photodiode has a large active area, high UV sensitivity yet very low noise, delivering a high S/N even at , ) END OF SCAN SOURCE FOLLOWER CIRCUIT Vdd ADDRESS SWITCH ACTIVE PHOTODIODE 2.5 mm 1 , DUMMY DIODE b a DUMMY VIDEO OXIDATION SILICON 1.0 µm START CLOCK Figure 2 Active area structure N TYPE SILICON RESET V KMPDC0019EA s Absolute maximum ratings Parameter
Hamamatsu Photonics
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S3921 S3924 S3921-128Q S3921-256Q S3924-256Q S3921-512Q S3924-1024Q S3921/S3924

S3923-256Q

Abstract: photodiode arrays designed specifically as detectors for multichannel spectroscopy. The scanning circuit is , photodiode has a large active area, high UV sensitivity yet very low noise, delivering a high S/N even at low , PHOTODIODE SATURATION CONTROL GATE SATURATION CONTROL DRAIN ADDRESS SWITCH DUMMY DIODE RESET SWITCH RESET RESET V Vss b a DUMMY VIDEO OXIDATION SILICON 1.0 µm 1.0 µm 400 µm N TYPE SILICON KMPDC0019EA P TYPE SILICON s Absolute maximum ratings S3922 SERIES: a=50 µm, b=45 µm S3923 SERIES: a
Hamamatsu Photonics
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S3923-256Q S3922/S3923 S3922-128Q S3922-256Q S3922-512Q S3923-512Q
Abstract: switching transistor array that addresses each photodiode, all integrated onto a monolithic silicon chip , photodiode arrays designed specifically as detectors for multichannel spectroscopy. The scanning circuit is , photodiode has a large active area, high UV sensitivity yet very low noise, delivering a high S/N even at , circuit st 2 Digital shift register (MOS shift register) Address switch Active photodiode , Saturation control drain Address switch Dummy diode b a Oxidation silicon Reset switch N Hamamatsu
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S3923-1024Q KMPD1037E03
Abstract: photodiode, all integrated onto a monolithic silicon chip. â'â Equivalent circuitâ' shows the circuit of , photodiode arrays designed specifically as detectors for multichannel spectroscopy. The scanning circuit is , photodiode has a large active area, high UV sensitivity yet very low noise, delivering a high S/N even at , Vdd Address switch Active photodiode 2.5 mm 1 Clock Active video Vss Saturation , silicon 1.0 µm Start Clock â  Active area structure N type silicon Reset V KMPDC0019EA Hamamatsu
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S3924-512Q KMPD1044E03

silicon PIN photodiode driver

Abstract: voltage follower nmos photodiode arrays designed specifically as detectors for multichannel spectroscopy. The scanning circuit is , photodiode has a large active area, high UV sensitivity yet very low noise, delivering a high S/N even at , ) ADDRESS SWITCH ACTIVE PHOTODIODE 0.5 mm END OF SCAN SOURCE FOLLOWER CIRCUIT Vdd ACTIVE VIDEO , OXIDATION SILICON RESET SWITCH N TYPE SILICON RESET RESET V KMPDC0019EA s Absolute maximum , structure P TYPE SILICON S3922 SERIES: a=50 µm, b=45 µm S3923 SERIES: a=25 µm, b=20 µm Value 15
Hamamatsu Photonics
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silicon PIN photodiode driver voltage follower nmos type de photodiode 670 nm A Simple Rise and Fall Time Waveform Control KMPD1037E01
Abstract: photodiode arrays designed specifically as detectors for multichannel spectroscopy. The scanning circuit is , photodiode has a large active area, high UV sensitivity yet very low noise, delivering a high S/N even at low , FOLLOWER CIRCUIT Vdd ACTIVE VIDEO Figure 2 Active area structure 2.5 mm b a OXIDATION SILICON ADDRESS SWITCH ACTIVE PHOTODIODE SATURATION CONTROL GATE SATURATION CONTROL DRAIN ADDRESS SWITCH DUMMY DIODE RESET SWITCH Vss DUMMY VIDEO 1.0 µm 1.0 µm 400 µm RESET RESET V N TYPE SILICON Hamamatsu Photonics
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KMPD1044E01

CIRCUIT OF SMOKE ALARM WITH PHOTODIODE

Abstract: air horn = 22 M VDD = 9.0V, Non-Alarm Mode SD4 Pin Definition Name Function Photodiode Input , memory capacitor. A VDD guard-ring type foil path around the photodiode pin and the CMEMORY pin will , 16-Pin Plastic SOW-20 SD4P SD4WG Features General Description s 6µA average , control This low power CMOS circuit is intended for use in a pulsed LED/ silicon cell smoke detector , external components. This device meets UL217 requirements and is available in a 16-pin plastic DIP or a 20
Supertex
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2N3704 CIRCUIT OF SMOKE ALARM WITH PHOTODIODE air horn IR LED and photodiode LED monitor circuit diagram smoke DETECTOR CIRCUIT DIAGRAM SD4 diode

CIRCUIT OF SMOKE ALARM WITH PHOTODIODE

Abstract: equivalent transistor 2n3704 memory capacitor. A VDD guard-ring type foil path around the photodiode pin and the CMEMORY pin will , 16-Pin Plastic SOW-20 SD4P SD4WG Features General Description s 6µA average , capability s Horn modulation mode control s Piezoelectric horn driver This low power CMOS circuit is intended for use in a pulsed LED/ silicon cell smoke detector system. It is designed for use , device meets UL217 requirements and is available in a 16-pin plastic DIP or a 20 pin SOIC package. This
Supertex
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equivalent transistor 2n3704 electro magnetic detector VTS4085

CIRCUIT OF SMOKE ALARM WITH PHOTODIODE

Abstract: IR LED and photodiode VDD = 9.0, Non-Alarm Mode SD4 Pin Definition Name Function Photodiode Input Connect , memory capacitor. A VDD guard-ring type foil path around the photodiode pin and the CMEMORY pin will , Ordering Information Device Package Order No. SD4 16-Pin Plastic SD4P SD4 SOW , for use in a pulsed LED/ silicon cell smoke detector system. It is designed for use in low power , requirements and is available in a 16-pin plastic DIP or a 20 pin SOIC package. This device is a drop in
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ir led ir led datasheet diode SD4 sound horn digital alarm ic Drive circuit for a piezoelectric

CIRCUIT OF SMOKE ALARM WITH PHOTODIODE

Abstract: equivalent transistor 2n3704 VDD = 9.0V, Non-Alarm Mode SD2 Pin Definition Name Function Photodiode Input Connect , memory capacitor. A VDD guard-ring type foil path around the photodiode pin and the CMEMORY pin will , Description Package Options 16-Pin Plastic Dip SD2P This low power CMOS circuit is intended for use in a pulsed LED/ silicon cell smoke detector system. It is designed for use in low power, battery , requirements and is available in a 16-pin plastic DIP or a 20 pin SOIC package. SOW-20 SD2WG Features
Supertex
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smoke detector waveforms smoke alarm circuit IR LED infrared led

silicon photodiode array

Abstract: photodiode amplifier , excellent linearity, low power consumption NMOS linear image sensors are self-scanning photodiode arrays , N-channel MOS transistors, operates at low power consumption and is easy to handle. Each photodiode has a , Clock l Multichannel spectrophotometry l Image readout system Active video Active photodiode , silicon N type silicon 1.0 µm KMPDC0020EA 400 µm Dummy diode P type silicon S3901 , (10% of peak) Peak sensitivity wavelength 600 p Photodiode dark current*4 0.2 ID Photodiode
Hamamatsu Photonics
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S3901-128Q S3901-256Q S3904-256Q S3901-512Q S3904-512Q S3904-1024Q photodiode amplifier S3901/S3904
Abstract: each photodiode, all integrated onto a monolithic silicon chip. â'â Equivalent circuitâ' shows the , , excellent linearity, low power consumption NMOS linear image sensors are self-scanning photodiode arrays , N-channel MOS transistors, operates at low power consumption and is easy to handle. Each photodiode has a , Clock l Multichannel spectrophotometry l Image readout system Active video Active photodiode , Oxidation silicon N type silicon 1.0 µm KMPDC0020EA 400 µm Dummy diode P type silicon Hamamatsu
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KMPD1036E04
Abstract: , excellent linearity, low power consumption NMOS linear image sensors are self-scanning photodiode arrays , N-channel MOS transistors, operates at low power consumption and is easy to handle. Each photodiode has a , SCAN Figure 2 Active area structure ACTIVE PHOTODIODE ACTIVE VIDEO Vss SATURATION CONTROL , SILICON KMPDC0020EA N TYPE SILICON P TYPE SILICON S3901 SERIES: a=50 µm, b=45 µm S3904 SERIES: a , height Spectral response range 200 to 1000 (10 % of peak) Peak sensitivity wavelength 600 p Photodiode Hamamatsu Photonics
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KMPD1036E01
Abstract: guard-ring type foil path D D around the photodiode pin and the CM M R pin will enhance noise immunity of , Information General Description Order No. Device Package SD2 16-Pin Plastic SD2P SD2 SOW-20 SD2WG This low power CMOS circuit is intended for use in a pulsed LED/ silicon cell , with a minimum of external components. This device meets UL217 requirements and is available in a 16-pin plastic DI Por a 20 pin SOIC package. Features L1 6jiA - Average standby current â¡ Pin -
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