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shottky diode met

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Abstract: simultaneously with Vccp. ยท Install a Shottky diode, as shown in Figure 1, between VCCP and the VIO pin/pins , Update Specification Clarifications Figure 1. Installing a Shottky Diode VIO VCCP SHOTTKY , S_VIO supply. Figure 2. Installing a Shottky Diode VIO VCCP SHOTTKY DIODE VCCP VIO , The PCI Bus Hold Time Requirement of 0 ns Hold Time Is Not Met in PCI33 PCI33 Mode 3. x x 11 , Met in PCI33 PCI33 Mode Problem: The bridge does not comply with the PCI33 PCI33 hold time specification in ... Intel
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22 pages,
121.66 Kb

278848 REQ64 PCI33 31154 pci 31154 31154 pci bridge 31154 PCI-to-PCI Bridge 82546GB BW31154 shottky diode met pci schematics BW31154 sl7sk intel 31154 300826-009US 300826-009US TEXT
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Abstract: resi dent on the Stik on the falling edge of CAS provided that setup and hold times are met. When the , ) can be met, tRco (max) is specified as a reference point only; if tRco (max) is greater than the , : Don't Care 012292 11/13 DS2219 DS2219 APPLICATION NOTE: DIODE CONTROL OF BKUP INPUT The fabrication , ) than the amount of one silicon diode. This requirement can be achieved by using a Schottky diode (D1) between the Vcci input and BKUP input (see example below). This diode will limit the negative volt age ... OCR Scan
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13 pages,
285 Kb

30 pin SIP dram memory 1024K DS2219 TEXT
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Abstract: BKUP input when the battery output voltage has decrease. A shottky diode is suggested for D2. This , met. When the 24th cycle is correctly entered, the system will have full access to RAM and must , (max) can be met, tRcD (max) is specified as a reference point only; if tR (max) is greater than the , -1 35 DS 2219 APPLICATION NOTE: DIODE CONTROL OF BKUP INPUT The fabrication of the DS1237 DS1237 , amount of one silicon diode. This can be achieved by using a diode (D2) between the battery positive ... OCR Scan
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13 pages,
226.54 Kb

DS2219 TEXT
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Abstract: limit the negative volt age level of BKUP input relative to the A Shottky diode is required for D1. V q q i. from the BKUP input when the battery output voltage has decreased. A Shottky diode is , DS1237 DS1237 on the falling edge of CAS provided that setup and hold times are met. When the 24th cycle is , battery backup disabled. 021497 9/10 r D S1237 S1237 APPLICATION NOTE: DIODE CONTROL OF BACKUP , V qqi input (pin 16) than the am ount of one silicon diode. This requirement can be achieved by ... OCR Scan
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10 pages,
190.66 Kb

DS1237 TEXT
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Abstract: the V c o A Shottky diode is required for D1. from the BKUP input when the battery output voltage has decreased. A Shottky diode is suggested for D2. 1 2 3 4 5 6 16 15 14 D2 13 12 11 10 9 GROUND , provided that setup and hold times are met. When the 24th cycle is correctly entered, the DS1237 DS1237 will issue , DS1237 DS1237 APPLICATION NOTE: DIODE CONTROL OF BACKUP INPUT The fabrication of the DS1237 DS1237 produces an N , diode. This requirement can be achieved by using a Schottky diode (D1) between the VCC| input and BKU P ... OCR Scan
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10 pages,
569.65 Kb

DS1237 TEXT
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Abstract: relative to the Vcci- A Shottky diode is suggested for D2. / \ SYSTEM INPUT D1 D2 . BA TTERY < VOLTAGE x INPUT A Shottky diode is required for D1. Eventually the battery voltage that is applied to , edge of CAS provided that setup and hold times are met. When the24th cycle is correctly entered, the , . 012392 8/9 9-41 DS1237 DS1237 APPLICATION NOTE: DIODE CONTROL OF BACKUP INPUT from the BKUP input , diode. This requirement can be achieved by using a Schottky diode (D1) between the V cci input and BKU ... OCR Scan
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9 pages,
242.47 Kb

TEXT
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Abstract: limit the negative voltage level of BKUP input relative to the VCci- A Shottky diode is required for D1 , input when the battery output voltage has decreased. A Shottky diode is suggested for D2. : 1 16 lj 2 , setup and hold times are met. When the 24th cycle is correctly entered, the DS1237 DS1237 will issue a final , .437 b54 This Material Copyrighted By Its Respective Manufacturer DS1237 DS1237 APPLICATION NOTE: DIODE CONTROL , negative from Vca input (pin 16) than the amount of one silicon diode. This requirement can be achieved by ... OCR Scan
datasheet

10 pages,
331.11 Kb

shottky diode met DS1237S c 1237 ah DS1237 TEXT
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Abstract: will limit the negative volt age level of B K U P input relative to the VcciA Shottky diode is required , from the B K U P input when the battery output voltage has decreased. A Shottky diode is suggested for , falling edge of C A S provided that setup and hold times are met. When the 24th cycle is correctly entered , back up disabled. 012392 8/9 9-41 DS1237 DS1237 APPLICATION NOTE: DIODE CONTROL OF BACKUP INPUT , from V c c i input (pin 16) than the amount of one silicon diode. This requirement can be achieved by ... OCR Scan
datasheet

9 pages,
335.43 Kb

DS1237-1 S1237 TEXT
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Abstract: the VcciA Shottky diode is required for D 1. from the BKUP input when the battery output voltage has decreased. A Shottky diode is suggested for D2. c c 1 2 3 16 15 14 L c > : > S , , into the DS 1237 on the falling edge of CAS provided that setup and hold times are met. When the 24th , DS1237 DS1237 APPLICATION NOTE: DIODE CONTROL OF BACKUP INPUT The fabrication of the DS1237 DS1237 produces an N , diode. This requirement can be achieved by using a Schottky diode (D 1) between the V Cci input and BKUP ... OCR Scan
datasheet

10 pages,
301.27 Kb

c 1237 ah DS1237 TEXT
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Abstract: BKUP input does not go more negative from Vcci input (pin 16) than the amount of one silicon diode. from the BKUP input when the battery output voltage has decreased. A Shottky diode is suggested for D2. SYSTEM INPUT / D1 This requirement can be achieved by using a Schottky diode (D1 , clocked, LSB first, into the DS1237 DS1237 on the falling edge of CAS provided that setup and hold times are met , APPLICATION NOTE: DIODE CONTROL OF BACKUP INPUT The fabrication of the DS1237 DS1237 produces an N well for the ... OCR Scan
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10 pages,
166.92 Kb

DS1237 TEXT
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Archived Files

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shottky diode or equivalent is necessary to avoid damage to the device during hot insertion or in all those cases when a proper power up sequence cannot be guaranteed. In case the Shottky diode is not the first removed at power off. In case an other shottky diode type is adopted it must fulfill the CVB- 0.1 m F - 100V + 20% (note 1) Negative Battery Filter DS BAT49X BAT49X (note 2) Protective Shottky Diode EXTERNAL COMPONENT LIST FOR THE L3092 L3092 CVSS 0.1 m F - 15V Negative Supply Voltage Filter CVDD 0.1 m
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/5180.htm
STMicroelectronics 02/04/1999 44.22 Kb HTM 5180.htm
shottky diode or equivalent is necessary to avoid damage to the device during hot insertion or in all those cases when a proper power up sequence cannot be guaranteed. In case the Shottky diode is not the first removed at power off. In case an other shottky diode type is adopted it must fulfill the CVB- 0.1 m F - 100V + 20% (note 1) Negative Battery Filter DS BAT49X BAT49X (note 2) Protective Shottky Diode EXTERNAL COMPONENT LIST FOR THE L3092 L3092 CVSS 0.1 m F - 15V Negative Supply Voltage Filter CVDD 0.1 m
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/5180-v1.htm
STMicroelectronics 14/06/1999 44.18 Kb HTM 5180-v1.htm
V SS or connecting one shottky diode (e.g. BAT49X BAT49X or equivalent) between Vbat and V SS . One diode 20% D1 Relay Kickback Clamp Diode 1N4148 1N4148 CREV Polarity Reversal Transition Time Programming CREV = Protection Resistor 30 to 80 W (10) 62 W D1 Relay Kickback Clamp Diode 1N4148 1N4148 Notes: (1) These correlation of tested performances at other temperatures. All parameters list ed here are met in the range 0
/datasheets/files/stmicroelectronics/books/ascii/docs/1033.htm
STMicroelectronics 25/05/2000 40.77 Kb HTM 1033.htm
present before V DD and V SS or connecting one shottky diode (e.g. BAT49X BAT49X or equivalent) between Vbat and V SS . One diode can be shared between all the SLICs of the same line card. OPERATING RANGE Symbol 20% D1 Relay Kickback Clamp Diode 1N4148 1N4148 CREV Polarity Reversal Transition Time Programming CREV = Protection Resistor 30 to 80 W (10) 62 W D1 Relay Kickback Clamp Diode 1N4148 1N4148 Notes: (1) These correlation of tested performances at other temperatures. All parameters list ed here are met in the range 0
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/1033-v2.htm
STMicroelectronics 14/06/1999 36.92 Kb HTM 1033-v2.htm
present before V DD and V SS or connecting one shottky diode (e.g. BAT49X BAT49X or equivalent) between Vbat and V SS . One diode can be shared between all the SLICs of the same line card. OPERATING RANGE Symbol 20% D1 Relay Kickback Clamp Diode 1N4148 1N4148 CREV Polarity Reversal Transition Time Programming CREV = Protection Resistor 30 to 80 W (10) 62 W D1 Relay Kickback Clamp Diode 1N4148 1N4148 Notes: (1) These correlation of tested performances at other temperatures. All parameters list ed here are met in the range 0
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/1033.htm
STMicroelectronics 02/04/1999 36.96 Kb HTM 1033.htm
that Vbat is always present before V DD and V SS or connecting one shottky diode (e.g. BAT49X BAT49X or equivalent) between Vbat and V SS . One diode can be shared between all the SLICs of the same line card. V [-Im(Zlttx) V fttx V 6.28]) (5) 5.6nF 20% D1 Relay Kickback Clamp Diode 1N4148 1N4148 CREV Resistor 30 to 80 W (10) 62 W D1 Relay Kickback Clamp Diode 1N4148 1N4148 Notes: (1) These components performances at other temperatures. All parameters list ed here are met in the range 0 5 C to +70 5 C.
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/1033-v1.htm
STMicroelectronics 25/05/2000 38.76 Kb HTM 1033-v1.htm
initiated without caring for any conditions met at pin CT. The OR gate driving Q6 is supplied from OUT 1. propriate means to avoid such undershots are clamps using shottky diodes or an output ca- pacitor application the outputs at least should be decou- pled by a resistance of some ohm or by a diode. Stability
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/1852-v3.htm
STMicroelectronics 25/05/2000 36.21 Kb HTM 1852-v3.htm
for any conditions met at pin CT. The OR gate driving Q6 is supplied from OUT 1. So the LOW at RES can shottky diodes or an output ca- pacitor fulfilling equation (6.1.1) . C OUT2 > L V I 2 /V 2 OUT2 (6.1.1) C application the outputs at least should be decou- pled by a resistance of some ohm or by a diode. Stability in
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/1852-v2.htm
STMicroelectronics 14/06/1999 34.38 Kb HTM 1852-v2.htm
for any conditions met at pin CT. The OR gate driving Q6 is supplied from OUT 1. So the LOW at RES can shottky diodes or an output ca- pacitor fulfilling equation (6.1.1) . C OUT2 > L V I 2 /V 2 OUT2 (6.1.1) C application the outputs at least should be decou- pled by a resistance of some ohm or by a diode. Stability in
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/1852.htm
STMicroelectronics 20/10/2000 37.24 Kb HTM 1852.htm
for any conditions met at pin CT. The OR gate driving Q6 is supplied from OUT 1. So the LOW at RES can shottky diodes or an output ca- pacitor fulfilling equation (6.1.1) . C OUT2 > L V I 2 /V 2 OUT2 (6.1.1) C application the outputs at least should be decou- pled by a resistance of some ohm or by a diode. Stability in
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/1852-v1.htm
STMicroelectronics 02/04/1999 34.42 Kb HTM 1852-v1.htm