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shottky diode met

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: simultaneously with Vccp. · Install a Shottky diode, as shown in Figure 1, between VCCP and the VIO pin/pins , Update Specification Clarifications Figure 1. Installing a Shottky Diode VIO VCCP SHOTTKY , S_VIO supply. Figure 2. Installing a Shottky Diode VIO VCCP SHOTTKY DIODE VCCP VIO , The PCI Bus Hold Time Requirement of 0 ns Hold Time Is Not Met in PCI33 Mode 3. x x 11 , Met in PCI33 Mode Problem: The bridge does not comply with the PCI33 hold time specification in Intel
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intel 31154 BW31154 sl7sk pci schematics BW31154 82546GB 31154 PCI-to-PCI Bridge 300826-009US 133MH
Abstract: resi dent on the Stik on the falling edge of CAS provided that setup and hold times are met. When the , ) can be met, tRco (max) is specified as a reference point only; if tRco (max) is greater than the , : Don't Care 012292 11/13 DS2219 APPLICATION NOTE: DIODE CONTROL OF BKUP INPUT The fabrication , ) than the amount of one silicon diode. This requirement can be achieved by using a Schottky diode (D1) between the Vcci input and BKUP input (see example below). This diode will limit the negative volt age -
OCR Scan
30 pin SIP dram memory 1024K HB56A19B DS1237 30-PIN
Abstract: BKUP input when the battery output voltage has decrease. A shottky diode is suggested for D2. This , met. When the 24th cycle is correctly entered, the system will have full access to RAM and must , (max) can be met, tRcD (max) is specified as a reference point only; if tR (max) is greater than the , -1 35 DS 2219 APPLICATION NOTE: DIODE CONTROL OF BKUP INPUT The fabrication of the DS1237 , amount of one silicon diode. This can be achieved by using a diode (D2) between the battery positive -
OCR Scan
DS221S S2219
Abstract: limit the negative volt age level of BKUP input relative to the A Shottky diode is required for D1. V q q i. from the BKUP input when the battery output voltage has decreased. A Shottky diode is , DS1237 on the falling edge of CAS provided that setup and hold times are met. When the 24th cycle is , battery backup disabled. 021497 9/10 r D S1237 APPLICATION NOTE: DIODE CONTROL OF BACKUP , V qqi input (pin 16) than the am ount of one silicon diode. This requirement can be achieved by -
OCR Scan
16-PIN DS1237S
Abstract: the V c o A Shottky diode is required for D1. from the BKUP input when the battery output voltage has decreased. A Shottky diode is suggested for D2. 1 2 3 4 5 6 16 15 14 D2 13 12 11 10 9 GROUND , provided that setup and hold times are met. When the 24th cycle is correctly entered, the DS1237 will issue , DS1237 APPLICATION NOTE: DIODE CONTROL OF BACKUP INPUT The fabrication of the DS1237 produces an N , diode. This requirement can be achieved by using a Schottky diode (D1) between the VCC| input and BKU P -
OCR Scan
Abstract: relative to the Vcci- A Shottky diode is suggested for D2. / \ SYSTEM INPUT D1 D2 . BA TTERY < VOLTAGE x INPUT A Shottky diode is required for D1. Eventually the battery voltage that is applied to , edge of CAS provided that setup and hold times are met. When the24th cycle is correctly entered, the , . 012392 8/9 9-41 DS1237 APPLICATION NOTE: DIODE CONTROL OF BACKUP INPUT from the BKUP input , diode. This requirement can be achieved by using a Schottky diode (D1) between the V cci input and BKU -
OCR Scan
DS123716-P
Abstract: limit the negative voltage level of BKUP input relative to the VCci- A Shottky diode is required for D1 , input when the battery output voltage has decreased. A Shottky diode is suggested for D2. : 1 16 lj 2 , setup and hold times are met. When the 24th cycle is correctly entered, the DS1237 will issue a final , .437 b54 This Material Copyrighted By Its Respective Manufacturer DS1237 APPLICATION NOTE: DIODE CONTROL , negative from Vca input (pin 16) than the amount of one silicon diode. This requirement can be achieved by -
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c 1237 ah
Abstract: will limit the negative volt age level of B K U P input relative to the VcciA Shottky diode is required , from the B K U P input when the battery output voltage has decreased. A Shottky diode is suggested for , falling edge of C A S provided that setup and hold times are met. When the 24th cycle is correctly entered , back up disabled. 012392 8/9 9-41 DS1237 APPLICATION NOTE: DIODE CONTROL OF BACKUP INPUT , from V c c i input (pin 16) than the amount of one silicon diode. This requirement can be achieved by -
OCR Scan
DS1237-1
Abstract: the VcciA Shottky diode is required for D 1. from the BKUP input when the battery output voltage has decreased. A Shottky diode is suggested for D2. c c 1 2 3 16 15 14 L c > : > S , , into the DS 1237 on the falling edge of CAS provided that setup and hold times are met. When the 24th , DS1237 APPLICATION NOTE: DIODE CONTROL OF BACKUP INPUT The fabrication of the DS1237 produces an N , diode. This requirement can be achieved by using a Schottky diode (D 1) between the V Cci input and BKUP -
OCR Scan
1237S
Abstract: negative voltage level of BKUP input relative to the VCCI. A Shottky diode is required for Dt. Eventually , the battery output voltage has decreased. A Shottky diode is suggested for D2. 1 16 2 15 3 14 4 , the falling edge of CAS\ provided that setup and hold times are met. When the 24th cycle is correctly , SEMICONDUCTOR CORP BTE D SbimaG 00G377Q 1 â  DAL os 1237 APPLICATION NOTE: DIODE CONTROL OF BKUP INPUT , input (pin 16) than the amount of one silicon diode. This requirement can be achieved by using a -
OCR Scan
s11 diode shottky GQD37
Abstract: BKUP input does not go more negative from Vcci input (pin 16) than the amount of one silicon diode. from the BKUP input when the battery output voltage has decreased. A Shottky diode is suggested for D2. SYSTEM INPUT / D1 This requirement can be achieved by using a Schottky diode (D1 , clocked, LSB first, into the DS1237 on the falling edge of CAS provided that setup and hold times are met , APPLICATION NOTE: DIODE CONTROL OF BACKUP INPUT The fabrication of the DS1237 produces an N well for the -
OCR Scan
Abstract: diode. A Shottky diode is suggested for D2. SYSTEM INPUT This requirement can be achieved by using a Schottky diode (D1) between the V q c i input and BKUP input (see example below). This diode , INPUT A Shottky diode is required for D1. Eventually the battery voltage that is applied to the , falling edge of CAS provided that setup and hold times are met. When the 24th cycle is correctly entered , . APPLICATION NOTE: DIODE CONTROL OF BACKUP INPUT The fabrication of the DS1237 produces an N well for the -
OCR Scan
Abstract: level of BKUP input relative to the VCC|. A Shottky diode is required for D1. Eventually the battery , output voltage has decreased. A Shottky diode is suggested for D2. 1 2 3 4 5 6 7 B 16 15 14 13 12 , the falling edge of CAS provided that setup and hold times are met. When the 24th cycle is correctly , disabled. 012392 9/10 741 DS1237 APPLICATION NOTE: DIODE CONTROL OF BACKUP INPUT The , ) than the amount of one silicon diode. This requirement can be achieved by using a Schottky diode (D1 -
OCR Scan
256KDRAM
Abstract: MBR0520LT1 Shottky Rectifier ONSEMI MBR0520LT1G 1 D3 SM/1N4001 Standard Rectifier ONSEMI 1N4001 3 D4, D106, D107 MBRA160T3 Shottky Rectifier ONSEMI MBRA160T3G 2 D5, D7 BAS16HT1 Switching Diode ONSEMI BAS16HT1G 1 D6 MBRA120ET3 Shottky , connector J100. Phase A, B, and C are labelled on the board. Power requirements are met by a single , . In Figure A-5 3-Phase N-MOS Bridge, resistors R101 (51 ohms), R102 (51 ohms), and diode D100 Freescale Semiconductor
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Jamicon capacitor SKR220M2AFBB 1206zC106K jamicon electrolytic capacitors ST-4EG-103 jamicon KIT33927EKEVBE KT33927UG
Abstract: Cm- Pin 14 (SW): Drain of the P-Channel MOSFET Switch. Cathode of the Shottky diode must be connected , the Shottky diode. As the operating frequency is increased the gate charge losses will reduce , . Next, the Schottky diode D1 is selected followed by Cin and Cout- Rsense Selection for Output Current , dissipation. CATCH DIODE SELECTION Losses in the catch diode depend on forward drop and switching times. Therefore Schottky diodes are a good choice for low drop and fast switching times. The catch diode carries -
OCR Scan
CD74-330 DD11A 551a CD74-470 diode 22ph LPT4545 LTC1265/LTC1265-3 3/LTC1265-5 LTC1265 CLS62-1B0 MBRS0520LT1
Abstract: Negative Battery Filter Protective Shottky Diode Involved Param eter or Function EXTERNAL COMPONENT LIST , to 680nF/N where N is the number of subscriber per card. 2) This shottky diode or equivalent is , sequence cannot be guaranteed. In case the Shottky diode is not implemented the power sequence should , an other shottky diode type is adopted it must fulfill the following characteristics: V f < 450mV@ If , · 15mA, Tamb =85°C(TjL3ooos = 120°C) Where n is the number of line sharing the same diode. 3) The -
OCR Scan
JJ SMD diode a8 L3000SX-77 equivalent LIMING RELAY L3000S L3092 PLCC28 SO-20 L3000S/L3092 DIP28
Abstract: Filter DS BAT49X (note 2) Battery Voltage Rejection Protective Shottky Diode EXTERNAL , card. 2) This shottky diode or equivalent is necessary to avoid damage to the device during hot insertion or in all those cases when a proper power up sequence cannot be guaranteed. In case the Shottky diode is not implemented the power sequence should guarantee that VB+ is always the last supply applied at power on and the first removed at power off. In case an other shottky diode type is adopted it STMicroelectronics
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L3092N relay by liming L3092FN L3000SX-VC L3000SX-77 L3000SX FLEX15ME SO-20TM
Abstract: , which is met a pressed key, the microcontroller in figure 1 may lead to erroneous by the , be diode has to be included at every microcontroller to continue to scan built. However, in , can wake-up ATmega88/168 included in the prevents undesired result. Shottky via a message on Atmel
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ATA6612 ATA6624 ATA6613 KL15 LIN ACTUATORS lin bus keyboard ATA6612/13 ATA66613
Abstract: 14 (SW): Drain of the P-Channel MOSFET Switch. Cathode of the Shottky diode must be connected close , drop across the Shottky diode. As the operating frequency is increased the gate charge losses will , Schottky diode D1 is selected followed by Cin and C o u t R sense determines the Inductor's peak current , > 5.2 x105 x Rsense xC txV reg (3) is short circuited. Under this condition, the diode must safely , or a MBRS130LT3 Schottky Diode. An MBRS0520 is a good choice for I o u t (m a x ) ^ 500mA. C|N -
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D03316-473 LTC1148 LTC1265-3 593D68X0020E2W 5930107X0010D2W LRC2010-01
Abstract: MBR0520LT1 Shottky Rectifier ONSEMI MBR0520LT1G 1 D3 SM/1N4001 Standard Rectifier ONSEMI 1N4001 3 D4, D106, D107 MBRA160T3 Shottky Rectifier ONSEMI MBRA160T3G 2 D5, D7 BAS16HT1 Switching Diode ONSEMI BAS16HT1G 1 D6 MBRA120ET3 Shottky , C are labelled on the board. Power requirements are met by a single external 8-42V, 5A power supply , . In Figure A-5 3-Phase N-MOS Bridge, resistors R101 (51 ohms), R102 (51 ohms), and diode D100 Freescale Semiconductor
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KIT33937AEKEVBE J200 mosfet jamicon np capacitor Jamicon capacitor np u101b MC33937A KT33937AUG
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