Philips Semiconductors / NXP Semiconductors
Search: BC547AT/R
Si NPN Lo-Pwr BJT
V(BR)CEO (V)=45
V(BR)CBO (V)=50
I(C) Abs.(A) Collector Current=100m
Absolute Max. Power Diss. (W)=625m
I(CBO) Max. (A)=15n
@V(CBO) (V) (Test Condition)=50
V(CE)sat Max.(V)=.60
@I(C) (A) (Test Condition)=100m
@I(B) (A) (Test Condition)=5.0m
h(FE) Min. Static Current Gain=110
h(FE) Max. Current gain.=220
@I(C) (A) (Test Condition)=2.0m
@V(CE) (V) (Test Condition)=5.0
f(T) Min. (Hz) Transition Freq=150M
@I(C) (A) (Test Condition)=10m
@V(CE) (V) (Test Condition)=5.0
C(obo) (Max) (F)=4.5p
@V(CB) (V) (Test Condition)=10
@Freq. (Hz) (Test Condition)=1.0M
Package=TO-92
Military=N