Various
Search: 2N4403
Medium Power, General Purpose
Medium Power, General Purpose, 2N4403, Silicon, PNP, 310mW, 40V, 40V, 5V, 600mA, 135>C, 200MHz, 9, 100MIN, MOT, TO92-2

Various
Search: 2N4403D
Si PNP LP HF BJT
V(BR)CEO (V)=40
V(BR)CBO (V)=40
h(FE) Min. Static Current Gain=100
h(FE) Max. Current gain.=300
@I(C) (A) (Test Condition)=150m
@V(CE) (V) (Test Condition)=2
f(T) Min. (Hz) Transition Freq=200M
V(CE)sat Max.(V)=400m
@I(C) (A) (Test Condition)=150m
@I(B) (A) (Test Condition)=15m
t(on) Max. (s) Turn-On Time=35n
t(off) Max. (s) Turn-Off Time=255n
C(obo) (Max) (F)=9p
Package=Chip
Military=N

Zetex Semiconductors
Search: 2N4403DA(CHIP)
Si PNP LP HF BJT
V(BR)CEO (V)=40
V(BR)CBO (V)=40
h(FE) Min. Static Current Gain=100
h(FE) Max. Current gain.=300
@I(C) (A) (Test Condition)=10m
@V(CE) (V) (Test Condition)=1.0
f(T) Min. (Hz) Transition Freq=200M
t(on) Max. (s) Turn-On Time=35n
t(off) Max. (s) Turn-Off Time=255n
C(obo) (Max) (F)=9.0p
Package=Chip
Military=N

Zetex Semiconductors
Search: 2N4403DB(CHIP)
Si PNP LP HF BJT
V(BR)CEO (V)=40
V(BR)CBO (V)=40
h(FE) Min. Static Current Gain=100
h(FE) Max. Current gain.=300
@I(C) (A) (Test Condition)=10m
@V(CE) (V) (Test Condition)=1.0
f(T) Min. (Hz) Transition Freq=200M
t(on) Max. (s) Turn-On Time=35n
t(off) Max. (s) Turn-Off Time=255n
C(obo) (Max) (F)=9.0p
Package=Chip
Military=N

Zetex Semiconductors
Search: 2N4403DC(CHIP)
Si PNP LP HF BJT
V(BR)CEO (V)=40
V(BR)CBO (V)=40
h(FE) Min. Static Current Gain=100
h(FE) Max. Current gain.=300
@I(C) (A) (Test Condition)=10m
@V(CE) (V) (Test Condition)=1.0
f(T) Min. (Hz) Transition Freq=200M
t(on) Max. (s) Turn-On Time=35n
t(off) Max. (s) Turn-Off Time=255n
C(obo) (Max) (F)=9.0p
Package=Chip
Military=N

Various
Search: 2N4403RA
Si PNP LP HF BJT
V(BR)CEO (V)=40
V(BR)CBO (V)=40
I(C) Abs.(A) Collector Current=600m
Absolute Max. Power Diss. (W)=350m
I(CBO) Max. (A)=100n
h(FE) Min. Static Current Gain=100
@I(C) (A) (Test Condition)=150m
@V(CE) (V) (Test Condition)=10
f(T) Min. (Hz) Transition Freq=200M
V(CE)sat Max.(V)=750m
@I(C) (A) (Test Condition)=500m
@I(B) (A) (Test Condition)=50m
t(d) Max. (s) Delay time.=35n
t(r) Max. (s) Rise time=20n
t(s) Max. (s) Storage time.=225n
t(off) Max. (s) Turn-Off Time=255n
Package=TO-92
Military=N

Philips Semiconductors / NXP Semiconductors
Search: 2N4403T/R
Si PNP LP HF BJT
V(BR)CEO (V)=40
V(BR)CBO (V)=40
I(C) Abs.(A) Collector Current=600m
Absolute Max. Power Diss. (W)=350m
I(CBO) Max. (A)=100n
h(FE) Min. Static Current Gain=100
@I(C) (A) (Test Condition)=150m
@V(CE) (V) (Test Condition)=10
f(T) Min. (Hz) Transition Freq=200M
V(CE)sat Max.(V)=750m
@I(C) (A) (Test Condition)=500m
@I(B) (A) (Test Condition)=50m
t(d) Max. (s) Delay time.=35n
t(r) Max. (s) Rise time=20n
t(s) Max. (s) Storage time.=225n
t(off) Max. (s) Turn-Off Time=255n
Package=TO-92
Military=N