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shockley

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shockley diode

Abstract: shockley . William Shockley (1910-1989) The brilliant director of the transistor effort, Dr. William Shockley's , Brattain, and Dr. William Shockley discovered the transistor effect and developed the first device in , leadership of Stanley Morgan and William Shockley," Dr. Bardeen once related. "Following a Ph.D. under , friends with James B. Fisk, who in 1945 was director of research at Bell Labs. Bardeen also knew Shockley , , a year or so later, Shockley came to me with an idea of making an amplifier out of copper oxide
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shockley diode shockley shockley diode application diode shockley shockley diode datasheet electrical bell working principle

shockley diode application

Abstract: shockley diode CATALOG OF 4-LAYER DIODES CLEVITEj SHOCKLEY TRANSISTOR 1 SOI RAGE MILL ROAD « PALO ALTO. CAUK. General Information and Introduction to the Shockley 4-Layer Diode _ft The Shockley 4-layer diode is a two , Current Vrb Reverse Breakover (Avalanche) Voltage This is a diagram of the construction of the Shockley 4 , suitable impurities. The symbol for the Shockley 4-layer diode is a modified "4". The slant line of the "4" , damage the device. ! N P N P 1 Conventional Current Flow ¿_ Symbol for the Shockley 4-layer diode
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shockley diode applications 1N3835 2sc 945 p transistor 1N3837 shockley diode high voltage and high current clevite 4G50M 4G100M 4G200M 4I-57V

shockley

Abstract: 4E20-28 individual item on orders with more than one item. SHOCKLEY SILICON POWER TRANSISTOR 3TX TYPE 1-99 100-499 , Clevite/Shockley warranty and terms and conditions of sale. \
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4E20-8 4E20-28 4E30-8 4E30-28 4E20A 4E50A 395 transistor 4e20m-8 4J50-25 4E20M-8 4E20M-28 4E30M-8 4E30M-28 4E40M-8 4E40M-28

shockley diode

Abstract: UF100A Thyristors Four-Layer (Shockley) Diode V(BO) Min. (V)80 V(BO) Max. (V)120 I(S) Max. (A)100u I(TRM) Max. (A)1.5§ @ t(w) (s) (Test Condition) I(TSM) Max. (A)15 V(R) Max. (V)120 I(H) Max. (A) Holding Current50m V(TM) Max. (V)1.0 @I(T) (A) (Test Condition)750m Minimum Operating Temp (øC)-60 Maximum Operating Temp (øC)125â'™ Package StyleTO-204AAvar Mounting StyleT Pinout Equivalence Code2-3 Ckt. (Pinout) NumberTY00200003 American Microsemiconductor
American Microsemiconductor
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TY00200003

shockley diode

Abstract: 470 Thyristors Four-Layer (Shockley) Diode V(BO) Min. (V)560 V(BO) Max. (V)840 I(S) Max. (A)500u I(TRM) Max. (A) @ t(w) (s) (Test Condition) I(TSM) Max. (A)50 V(R) Max. (V)420 I(H) Max. (A) Holding Current500u V(TM) Max. (V)2.0 @I(T) (A) (Test Condition)1.0 Minimum Operating Temp (øC)-45 Maximum Operating Temp (øC)125â'™ Package StyleAxial-10 Mounting StyleT Pinout Equivalence CodeN/A Ckt. (Pinout) Number American Microsemiconductor
American Microsemiconductor
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shockley diode

Abstract: 1N3490 Thyristors Four-Layer (Shockley) Diode V(BO) Min. (V)16 V(BO) Max. (V)24 I(S) Max. (A)125u I(TRM) Max. (A)10 @ t(w) (s) (Test Condition)10u I(TSM) Max. (A)10 V(R) Max. (V)12 I(H) Max. (A) Holding Current45m V(TM) Max. (V)1.2 @I(T) (A) (Test Condition)70m Minimum Operating Temp (øC)-60 Maximum Operating Temp (øC)150 Package StyleDO-204AA Mounting StyleT Pinout Equivalence Code2-3 Ckt. (Pinout) NumberTY00200003 American Microsemiconductor
American Microsemiconductor
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DO-204AA
Abstract: 410 Thyristors Four-Layer (Shockley) Diode V(BO) Min. (V)80 V(BO) Max. (V)120 I(S) Max. (A)500u I(TRM) Max. (A) @ t(w) (s) (Test Condition) I(TSM) Max. (A)50 V(R) Max. (V)60 I(H) Max. (A) Holding Current500u V(TM) Max. (V)2.0 @I(T) (A) (Test Condition)1.0 Minimum Operating Temp (øC)-45 Maximum Operating Temp (øC)125â'™ Package StyleAxial-10 Mounting StyleT Pinout Equivalence CodeN/A Ckt. (Pinout) Number American Microsemiconductor American Microsemiconductor
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shockley diode

Abstract: 1N3838 Thyristors Four-Layer (Shockley) Diode V(BO) Min. (V)90 V(BO) Max. (V)110 I(S) Max. (A)125u I(TRM) Max. (A)10 @ t(w) (s) (Test Condition)10u I(TSM) Max. (A) V(R) Max. (V)60 I(H) Max. (A) Holding Current15m V(TM) Max. (V)1.2 @I(T) (A) (Test Condition)100m Minimum Operating Temp (øC)-60 Maximum Operating Temp (øC)155â'™ Package StyleDO-204AA Mounting StyleT Pinout Equivalence Code2-3 Ckt. (Pinout) NumberTY00200003 American Microsemiconductor
American Microsemiconductor
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shockley diode

Abstract: 420 Thyristors Four-Layer (Shockley) Diode V(BO) Min. (V)160 V(BO) Max. (V)240 I(S) Max. (A)500u I(TRM) Max. (A) @ t(w) (s) (Test Condition) I(TSM) Max. (A)50 V(R) Max. (V)120 I(H) Max. (A) Holding Current500u V(TM) Max. (V)2.0 @I(T) (A) (Test Condition)1.0 Minimum Operating Temp (øC)-45 Maximum Operating Temp (øC)125â'™ Package StyleAxial-10 Mounting StyleT Pinout Equivalence CodeN/A Ckt. (Pinout) Number American Microsemiconductor
American Microsemiconductor
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shockley diode

Abstract: 480 Thyristors Four-Layer (Shockley) Diode V(BO) Min. (V)640 V(BO) Max. (V)960 I(S) Max. (A)500u I(TRM) Max. (A) @ t(w) (s) (Test Condition) I(TSM) Max. (A)50 V(R) Max. (V)480 I(H) Max. (A) Holding Current500u V(TM) Max. (V)2.0 @I(T) (A) (Test Condition)1.0 Minimum Operating Temp (øC)-45 Maximum Operating Temp (øC)125â'™ Package StyleAxial-10 Mounting StyleT Pinout Equivalence CodeN/A Ckt. (Pinout) Number American Microsemiconductor
American Microsemiconductor
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shockley diode

Abstract: T40R06220300 Thyristors Four-Layer (Shockley) Diode V(BO) Min. (V)650 V(BO) Max. (V)0.8k I(S) Max. (A)5.0m I(TRM) Max. (A)35² @ t(w) (s) (Test Condition) I(TSM) Max. (A)300¥ V(R) Max. (V)600 I(H) Max. (A) Holding Current100m V(TM) Max. (V)40 @I(T) (A) (Test Condition)1.0k Minimum Operating Temp (øC)-45 Maximum Operating Temp (øC)125õ Package StyleDO-5 Mounting StyleT Pinout Equivalence Code2-3 Ckt. (Pinout) NumberTY00200003 American Microsemiconductor
American Microsemiconductor
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Abstract: UF100B Thyristors Four-Layer (Shockley) Diode V(BO) Min. (V)85 V(BO) Max. (V)115 I(S) Max. (A)100u I(TRM) Max. (A)1.5§ @ t(w) (s) (Test Condition) I(TSM) Max. (A)15 V(R) Max. (V)115 I(H) Max. (A) Holding Current50m V(TM) Max. (V)1.0 @I(T) (A) (Test Condition)750m Minimum Operating Temp (øC)-60 Maximum Operating Temp (øC)125â'™ Package StyleTO-204AAvar Mounting StyleT Pinout Equivalence Code2-3 Ckt. (Pinout) NumberTY00200003 American Microsemiconductor American Microsemiconductor
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Abstract: UF100C Thyristors Four-Layer (Shockley) Diode V(BO) Min. (V)90 V(BO) Max. (V)110 I(S) Max. (A)100u I(TRM) Max. (A)1.5§ @ t(w) (s) (Test Condition) I(TSM) Max. (A)15 V(R) Max. (V)110 I(H) Max. (A) Holding Current50m V(TM) Max. (V)1.0 @I(T) (A) (Test Condition)750m Minimum Operating Temp (øC)-60 Maximum Operating Temp (øC)125â'™ Package StyleTO-204AAvar Mounting StyleT Pinout Equivalence Code2-3 Ckt. (Pinout) NumberTY00200003 American Microsemiconductor American Microsemiconductor
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T40R06220400

Abstract: T40R06220400 Thyristors Four-Layer (Shockley) Diode V(BO) Min. (V)650 V(BO) Max. (V)0.8k I(S) Max. (A)5.0m I(TRM) Max. (A)35² @ t(w) (s) (Test Condition) I(TSM) Max. (A)300¥ V(R) Max. (V)600 I(H) Max. (A) Holding Current100m V(TM) Max. (V)40 @I(T) (A) (Test Condition)1.0k Minimum Operating Temp (øC)-45 Maximum Operating Temp (øC)125õ Package StyleDO-5 Mounting StyleT Pinout Equivalence Code2-3 Ckt. (Pinout) NumberTY00200003 American Microsemiconductor
American Microsemiconductor
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Abstract: 1N3840 Thyristors Four-Layer (Shockley) Diode V(BO) Min. (V)21 V(BO) Max. (V)29 I(S) Max. (A)125u I(TRM) Max. (A)10 @ t(w) (s) (Test Condition)10u I(TSM) Max. (A)10 V(R) Max. (V)15 I(H) Max. (A) Holding Current50m V(TM) Max. (V)1.2 @I(T) (A) (Test Condition)100m Minimum Operating Temp (øC)-65 Maximum Operating Temp (øC)150â'™ Package StyleDO-204AA Mounting StyleT Pinout Equivalence Code2-3 Ckt. (Pinout) NumberTY00200003 American Microsemiconductor American Microsemiconductor
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Abstract: 1N3837 Thyristors Four-Layer (Shockley) Diode V(BO) Min. (V)46 V(BO) Max. (V)54 I(S) Max. (A)125u I(TRM) Max. (A)10 @ t(w) (s) (Test Condition)10u I(TSM) Max. (A)10 V(R) Max. (V)30 I(H) Max. (A) Holding Current15m V(TM) Max. (V)1.2 @I(T) (A) (Test Condition)100m Minimum Operating Temp (øC)-65 Maximum Operating Temp (øC)150â'™ Package StyleDO-204AA Mounting StyleT Pinout Equivalence Code2-3 Ckt. (Pinout) NumberTY00200003 American Microsemiconductor American Microsemiconductor
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Abstract: 1N3832 Thyristors Four-Layer (Shockley) Diode V(BO) Min. (V)21 V(BO) Max. (V)29 I(S) Max. (A)125u I(TRM) Max. (A)10 @ t(w) (s) (Test Condition)10u I(TSM) Max. (A)10 V(R) Max. (V)15 I(H) Max. (A) Holding Current15m V(TM) Max. (V)1.2 @I(T) (A) (Test Condition)100m Minimum Operating Temp (øC)-65 Maximum Operating Temp (øC)150â'™ Package StyleDO-204AA Mounting StyleT Pinout Equivalence Code2-3 Ckt. (Pinout) NumberTY00200003 American Microsemiconductor American Microsemiconductor
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Abstract: 1N3836 Thyristors Four-Layer (Shockley) Diode V(BO) Min. (V)41 V(BO) Max. (V)49 I(S) Max. (A)125u I(TRM) Max. (A)10 @ t(w) (s) (Test Condition)10u I(TSM) Max. (A)10 V(R) Max. (V)27 I(H) Max. (A) Holding Current15m V(TM) Max. (V)1.2 @I(T) (A) (Test Condition)100m Minimum Operating Temp (øC)-65 Maximum Operating Temp (øC)150â'™ Package StyleDO-204AA Mounting StyleT Pinout Equivalence Code2-3 Ckt. (Pinout) NumberTY00200003 American Microsemiconductor American Microsemiconductor
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Abstract: 460 Thyristors Four-Layer (Shockley) Diode V(BO) Min. (V)480 V(BO) Max. (V)720 I(S) Max. (A)500u I(TRM) Max. (A) @ t(w) (s) (Test Condition) I(TSM) Max. (A)50 V(R) Max. (V)360 I(H) Max. (A) Holding Current500u V(TM) Max. (V)2.0 @I(T) (A) (Test Condition)1.0 Minimum Operating Temp (øC)-45 Maximum Operating Temp (øC)125â'™ Package StyleAxial-10 Mounting StyleT Pinout Equivalence CodeN/A Ckt. (Pinout) Number American Microsemiconductor American Microsemiconductor
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Abstract: 430 Thyristors Four-Layer (Shockley) Diode V(BO) Min. (V)240 V(BO) Max. (V)360 I(S) Max. (A)500u I(TRM) Max. (A) @ t(w) (s) (Test Condition) I(TSM) Max. (A)50 V(R) Max. (V)180 I(H) Max. (A) Holding Current500u V(TM) Max. (V)2.0 @I(T) (A) (Test Condition)1.0 Minimum Operating Temp (øC)-45 Maximum Operating Temp (øC)125â'™ Package StyleAxial-10 Mounting StyleT Pinout Equivalence CodeN/A Ckt. (Pinout) Number American Microsemiconductor American Microsemiconductor
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