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Part : SGW30N60HSFKSA1 Supplier : Infineon Technologies Manufacturer : Newark element14 Stock : - Best Price : - Price Each : -
Part : SGW30N60HS Supplier : Infineon Technologies Manufacturer : Rochester Electronics Stock : 24,512 Best Price : $2.74 Price Each : $3.37
Part : SGW30N60HSFKSA1 Supplier : Infineon Technologies Manufacturer : Rochester Electronics Stock : 2,060 Best Price : $3.41 Price Each : $4.20
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sgw30n60hs Datasheet

Part Manufacturer Description PDF Type
SGW30N60HS Infineon Technologies High Speed IGBT in NPT-technology Original
SGW30N60HS Infineon Technologies 30A 600V TO247 IGBT Original

sgw30n60hs

Catalog Datasheet MFG & Type PDF Document Tags

g30n60hs

Abstract: G30N60hs IGBT SGP30N60HS SGW30N60HS High Speed IGBT in NPT-technology C · 30% lower Eoff compared to , PG-TO-220-3-1 SGW30N60HS 600V 30 480uJ 150°C G30N60HS PG-TO-247-3-21 Tj Marking , 07 SGP30N60HS SGW30N60HS Thermal Resistance Parameter Symbol Conditions Max. Value , between short circuits: >1s. Power Semiconductors 2 Rev. 2.2 Sep 07 SGP30N60HS SGW30N60HS , Figure E. Power Semiconductors 3 Rev. 2.2 Sep 07 SGP30N60HS SGW30N60HS 100A tP
Infineon Technologies
Original
G30N60hs IGBT g30n60 G30N60h g30n60hs pspice high frequency igbt PG-TO247-3-21 JESD-022

g30n60hs

Abstract: G30N60hs IGBT SGP30N60HS SGW30N60HS High Speed IGBT in NPT-technology C · 30% lower Eoff compared to , PG-TO-220-3-1 SGW30N60HS 600V 30 480uJ 150°C G30N60HS PG-TO-247-3 Marking , SGP30N60HS SGW30N60HS Thermal Resistance Parameter Symbol Conditions Max. Value Unit 0.5 , Nov 09 SGP30N60HS SGW30N60HS Switching Characteristic, Inductive Load, at Tj=25 °C Parameter , in Figure E. Power Semiconductors 3 Rev. 2.4 Nov 09 SGP30N60HS SGW30N60HS 100A tP
Infineon Technologies
Original
600v 30a IGBT igbt 600V 30A infineon SGW30N60HS

SGW30N60HS

Abstract: SGP30N60HS Preliminary Datasheet SGP30N60HS SGW30N60HS High Speed IGBT in NPT-technology C · 30 , SGP30N60HS 600V 30 3.5V SGW30N60HS 600V 30 3.5V G E Package Ordering Code , Datasheet SGP30N60HS SGW30N60HS Thermal Resistance Parameter Symbol Conditions Max. Value , Datasheet SGP30N60HS SGW30N60HS Switching Characteristic, Inductive Load, at Tj=25 °C Parameter , Semiconductors 3 ns mJ ns mJ Sep-01 Preliminary Datasheet SGP30N60HS SGW30N60HS
Infineon Technologies
Original
Q67040-A4463-A003 Q67040-S4237-A002

g30n60hs

Abstract: g30n60 SGP30N60HS SGW30N60HS High Speed IGBT in NPT-technology C · 30% lower Eoff compared to , SGW30N60HS Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25°C TC = 100 , : >1s. 1 Rev. 2 Jan 05 Power Semiconductors SGP30N60HS SGW30N60HS Thermal Resistance Parameter , SGW30N60HS Switching Characteristic, Inductive Load, at Tj=25 °C Parameter IGBT Characteristic Turn-on delay , due to test circuit in Figure E. 3 Rev. 2 Jan 05 Power Semiconductors SGP30N60HS SGW30N60HS
Infineon Technologies
Original
RG111 PG-TO-247-3-1 Q67040-S4500 Q67040-S4501

SGW30N60HS

Abstract: SGP30N60HS SGP30N60HS SGW30N60HS High Speed IGBT in NPT-technology C · 30% lower Eoff compared to , Code SGP30N60HS 600V 30 480uJ 150°C TO-220AB Q67040-S4500 SGW30N60HS 600V , -02 SGP30N60HS SGW30N60HS Thermal Resistance Parameter Symbol Conditions Max. Value Unit 0.5 , -02 SGP30N60HS SGW30N60HS Switching Characteristic, Inductive Load, at Tj=25 °C Parameter Symbol , SGW30N60HS 100A tP=4us 15us T C=80°C IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 100A 80A
Infineon Technologies
Original
P-TO-220-3-1 P-TO-247-3-1

g30n60hs

Abstract: g30n60 SGP30N60HS SGW30N60HS High Speed IGBT in NPT-technology C · 30% lower Eoff compared to , SGP30N60HS SGW30N60HS Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25°C TC = , Semiconductors SGP30N60HS SGW30N60HS Thermal Resistance Parameter Characteristic IGBT thermal resistance , SGW30N60HS Switching Characteristic, Inductive Load, at Tj=25 °C Parameter IGBT Characteristic Turn-on delay , SGW30N60HS 100A 100A tP=4us 15us IC, COLLECTOR CURRENT 80A IC, COLLECTOR CURRENT T C
Infineon Technologies
Original
1A20A

SGW30N60HS

Abstract: Q67040-S4501 Preliminary Datasheet SGP30N60HS SGW30N60HS High Speed IGBT in NPT-technology C · 30 , stable behaviour G E Type SGP30N60HS SGW30N60HS Maximum Ratings Parameter VCE 600V 600V IC , -02 Power Semiconductors Preliminary Datasheet SGP30N60HS SGW30N60HS Thermal Resistance Parameter , SGW30N60HS Switching Characteristic, Inductive Load, at Tj=25 °C Parameter IGBT Characteristic Turn-on , SGP30N60HS SGW30N60HS 100A 100A T C=80°C t P =4us 15us IC, COLLECTOR CURRENT 80A T C=110°C IC
Infineon Technologies
Original

G30N60HS

Abstract: SGP30N60HS SGP30N60HS SGW30N60HS High Speed IGBT in NPT-technology C · 30% lower Eoff compared to , PG-TO-220-3-1 SGW30N60HS 600V 30 480uJ 150°C G30N60HS PG-TO-247-3 Marking , SGP30N60HS SGW30N60HS Thermal Resistance Parameter Symbol Conditions Max. Value Unit 0.5 , SGW30N60HS Switching Characteristic, Inductive Load, at Tj=25 °C Parameter Symbol Conditions Value , . Power Semiconductors 3 Rev. 2.3 Sep 08 SGP30N60HS SGW30N60HS 100A tP=4us 15us T C
Infineon Technologies
Original

g30n60hs

Abstract: g30n60 SGP30N60HS SGW30N60HS High Speed IGBT in NPT-technology C · 30% lower Eoff compared to , SGP30N60HS SGW30N60HS Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25°C TC = , Semiconductors SGP30N60HS SGW30N60HS Thermal Resistance Parameter Characteristic IGBT thermal resistance , SGW30N60HS Switching Characteristic, Inductive Load, at Tj=25 °C Parameter IGBT Characteristic Turn-on delay , SGW30N60HS 100A 100A tP=4us 15us IC, COLLECTOR CURRENT 80A IC, COLLECTOR CURRENT T C
Infineon Technologies
Original

SGP30N60HS

Abstract: SGW30N60HS SGP30N60HS SGW30N60HS High Speed IGBT in NPT-technology C · 30% lower Eoff compared to , 480uJ SGW30N60HS 600V 30 480uJ Type Package Ordering Code 150°C TO , / Rev.1 May-03 SGP30N60HS SGW30N60HS Thermal Resistance Parameter Symbol Conditions Max , -03 SGP30N60HS SGW30N60HS Switching Characteristic, Inductive Load, at Tj=25 °C Parameter Symbol , . Power Semiconductors 3 Preliminary / Rev.1 May-03 SGP30N60HS SGW30N60HS 100A tP=4us 15us
Infineon Technologies
Original
3UAT

igbt dimmer

Abstract: SKW30N60HS A 3.5 V 0.48 mJ SGP30N60HS SGW30N60HS 20 A 40 A 3.5 V 0.24 mJ SKW20N60HS
Infineon Technologies
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SGB02N60 SGB04N60 SGB06N60 SGB10N60 igbt dimmer SKW30N60HS SGP15N120 SKP15N60 SKW25N120 igbt 2A SGD02N60 SGP02N60 SGD04N60 SGP04N60

IGBT SKW30N60HS

Abstract: igbt 400V 20A SGP04N60HS 6A SGP06N60HS 20A SGP20N60HS SGW20N60HS 30A SGP30N60HS SGW30N60HS 2A
Infineon Technologies
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IGBT SKW30N60HS igbt 400V 20A dc welding machine circuit diagram igbt welding DATA SHEET OF IGBT IGBT 600v 20a TC100 SGP02N60HS

STR-G6551

Abstract: STR-F6654 -247 SKW20N60HS FGH40N6S2 600 35.0 1.7 TO-247 SGW30N60HS FGH40N6S2D 600 35.0 1.7 , 40.0 1.6 TO-247 SGW30N60HS HGTG20N60B3 600 20.0 2.1 TO-247 SGW20N60
Infineon Technologies
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STR-G6551 STR-F6654 g6551 TDA16822 STR-F6653 strg6551 2002-S P-DSO14/16 P-TO-220

Electric Welding Machine diagram

Abstract: SWITCHING WELDING SCHEMATIC BY MOSFET SGW30N60HS 2A DuoPack 10 4A 6A 20A SKW20N60HS 30A SKW30N60HS Fig. 5: Product Range
Infineon Technologies
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Electric Welding Machine diagram SWITCHING WELDING SCHEMATIC BY MOSFET welding machine diagram IGBT SCHEMATIC MOSFET FOR 100khz SWITCHING APPLICATIONS schematic welding machine

TDA 16822

Abstract: 04N60C3 equivalent at TJ =150°C Type 36 41 0.24 0.48 SGW20N60HS SGW30N60HS 6 12 0.08 , SDT10S30 SDT12S60 SDT20S30 SGB15N60HS SGP20N60HS SGW20N60HS SGW30N60HS SKB06N60HS SKB15N60HS
Infineon Technologies
Original
TDA 16822 04N60C3 equivalent ICE1QS01 equivalent 07N60C3 mosfet transistor tda 3050 1QS01 B152-H8202-X-X-7600