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sgw30n60hs Datasheet

Part Manufacturer Description PDF Type Ordering
SGW30N60HS Infineon Technologies High Speed IGBT in NPT-technology
ri

11 pages,
305.03 Kb

Original Buy
datasheet frame
SGW30N60HS Infineon Technologies 30A 600V TO247 IGBT
ri

12 pages,
359.6 Kb

Original Buy
datasheet frame

sgw30n60hs

Catalog Datasheet Results Type PDF Document Tags
Abstract: SGP30N60HS SGP30N60HS SGW30N60HS High Speed IGBT in NPT-technology C · 30% lower Eoff compared to , PG-TO-220-3-1 PG-TO-220-3-1 SGW30N60HS 600V 30 480µJ 150°C G30N60HS G30N60HS PG-TO-247-3-21 PG-TO-247-3-21 Tj Marking , 07 SGP30N60HS SGP30N60HS SGW30N60HS Thermal Resistance Parameter Symbol Conditions Max. Value , between short circuits: >1s. Power Semiconductors 2 Rev. 2.2 Sep 07 SGP30N60HS SGP30N60HS SGW30N60HS , Figure E. Power Semiconductors 3 Rev. 2.2 Sep 07 SGP30N60HS SGP30N60HS SGW30N60HS 100A tP=4µs ... Original
datasheet

12 pages,
360.95 Kb

JESD-022 PG-TO247-3-21 PG-TO-220-3-1 SGW30N60HS PG-TO-247-3-21 G30N60h g30n60hs pspice high frequency igbt SGP30N60HS g30n60 G30N60hs IGBT g30n60hs SGP30N60HS abstract
datasheet frame
Abstract: SGP30N60HS SGP30N60HS SGW30N60HS High Speed IGBT in NPT-technology C · 30% lower Eoff compared to , PG-TO-220-3-1 PG-TO-220-3-1 SGW30N60HS 600V 30 480µJ 150°C G30N60HS G30N60HS PG-TO-247-3 PG-TO-247-3 Marking Package , SGW30N60HS Thermal Resistance Parameter Symbol Conditions Max. Value Unit 0.5 K/W , SGW30N60HS Switching Characteristic, Inductive Load, at Tj=25 °C Parameter Symbol Conditions Value , Figure E. Power Semiconductors 3 Rev. 2.4 Nov 09 SGP30N60HS SGP30N60HS SGW30N60HS 100A tP=4µs ... Original
datasheet

12 pages,
379.96 Kb

SGW30N60HS PG-TO-220-3-1 PG-TO-247-3 PG-TO-247-3-21 igbt 600V 30A infineon SGW30N60HS G30N60hs IGBT 600v 30a IGBT SGP30N60HS G30N60 g30n60hs SGP30N60HS abstract
datasheet frame
Abstract: SGP30N60HS SGP30N60HS SGW30N60HS High Speed IGBT in NPT-technology C · 30% lower Eoff compared to , PG-TO-220-3-1 PG-TO-220-3-1 SGW30N60HS 600V 30 480µJ 150°C G30N60HS G30N60HS PG-TO-247-3 PG-TO-247-3 Marking Package , SGW30N60HS Thermal Resistance Parameter Symbol Conditions Max. Value Unit 0.5 K/W , SGW30N60HS Switching Characteristic, Inductive Load, at Tj=25 °C Parameter Symbol Conditions Value , Power Semiconductors 3 Rev. 2.3 Sep 08 SGP30N60HS SGP30N60HS SGW30N60HS 100A tP=4µs 15µs T ... Original
datasheet

12 pages,
353.03 Kb

PG-TO-247-3-21 PG-TO-220-3-1 G30N60hs IGBT PG-TO-247-3 g30n60hs pspice high frequency igbt SGW30N60HS G30N60 G30N60h SGP30N60HS G30N60HS SGP30N60HS abstract
datasheet frame
Abstract: Preliminary Datasheet SGP30N60HS SGP30N60HS SGW30N60HS High Speed IGBT in NPT-technology C · 30% , SGP30N60HS SGP30N60HS 600V 30 3.5V SGW30N60HS 600V 30 3.5V G E Package Ordering Code , Datasheet SGP30N60HS SGP30N60HS SGW30N60HS Thermal Resistance Parameter Symbol Conditions Max. Value , Datasheet SGP30N60HS SGP30N60HS SGW30N60HS Switching Characteristic, Inductive Load, at Tj=25 °C Parameter , Semiconductors 3 ns mJ ns mJ Sep-01 Preliminary Datasheet SGP30N60HS SGP30N60HS SGW30N60HS ... Original
datasheet

12 pages,
359.6 Kb

SGW30N60HS SGP30N60HS SGP30N60HS abstract
datasheet frame
Abstract: Preliminary Datasheet SGP30N60HS SGP30N60HS SGW30N60HS High Speed IGBT in NPT-technology C · 30% , stable behaviour G E Type SGP30N60HS SGP30N60HS SGW30N60HS Maximum Ratings Parameter VCE 600V 600V IC , Power Semiconductors Preliminary Datasheet SGP30N60HS SGP30N60HS SGW30N60HS Thermal Resistance Parameter , SGW30N60HS Switching Characteristic, Inductive Load, at Tj=25 °C Parameter IGBT Characteristic Turn-on , SGP30N60HS SGP30N60HS SGW30N60HS 100A 100A T C=80°C t P =4µs 15µs IC, COLLECTOR CURRENT 80A T C=110°C IC ... Original
datasheet

11 pages,
263.43 Kb

SGW30N60HS Q67040-S4501 SGP30N60HS SGP30N60HS abstract
datasheet frame
Abstract: SGP30N60HS SGP30N60HS SGW30N60HS High Speed IGBT in NPT-technology C · 30% lower Eoff compared to , 480µJ SGW30N60HS 600V 30 480µJ Type Package Ordering Code 150°C TO-220AB , / Rev.1 May-03 SGP30N60HS SGP30N60HS SGW30N60HS Thermal Resistance Parameter Symbol Conditions Max. , SGP30N60HS SGP30N60HS SGW30N60HS Switching Characteristic, Inductive Load, at Tj=25 °C Parameter Symbol , Power Semiconductors 3 Preliminary / Rev.1 May-03 SGP30N60HS SGP30N60HS SGW30N60HS 100A tP=4µs 15µs ... Original
datasheet

11 pages,
305.03 Kb

SGW30N60HS SGP30N60HS Q67040-S4500 Q67040-S4501 P-TO-220-3-1 P-TO-247-3-1 SGP30N60HS abstract
datasheet frame
Abstract: SGP30N60HS SGP30N60HS SGW30N60HS High Speed IGBT in NPT-technology C · 30% lower Eoff compared to , Code SGP30N60HS SGP30N60HS 600V 30 480µJ 150°C TO-220AB Q67040-S4500 Q67040-S4500 SGW30N60HS 600V , SGP30N60HS SGP30N60HS SGW30N60HS Thermal Resistance Parameter Symbol Conditions Max. Value Unit 0.5 , SGP30N60HS SGP30N60HS SGW30N60HS Switching Characteristic, Inductive Load, at Tj=25 °C Parameter Symbol , SGW30N60HS 100A tP=4µs 15µs T C=80°C IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 100A 80A ... Original
datasheet

11 pages,
421.54 Kb

SGW30N60HS SGP30N60HS Q67040-S4500 Q67040-S4501 P-TO-220-3-1 P-TO-247-3-1 SGP30N60HS abstract
datasheet frame
Abstract: SGP30N60HS SGP30N60HS SGW30N60HS High Speed IGBT in NPT-technology C · 30% lower Eoff compared to , SGP30N60HS SGP30N60HS SGW30N60HS Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25°C TC = , Semiconductors SGP30N60HS SGP30N60HS SGW30N60HS Thermal Resistance Parameter Characteristic IGBT thermal resistance , ; time between short circuits: >1s. 2 Rev. 2.1 June 06 Power Semiconductors SGP30N60HS SGP30N60HS SGW30N60HS , SGW30N60HS 100A 100A tP=4µs 15µs IC, COLLECTOR CURRENT 80A IC, COLLECTOR CURRENT T C=80°C ... Original
datasheet

11 pages,
477.55 Kb

SGW30N60HS SGP30N60HS g30n60 g30n60hs SGP30N60HS abstract
datasheet frame
Abstract: SGP30N60HS SGP30N60HS SGW30N60HS High Speed IGBT in NPT-technology C · 30% lower Eoff compared to , SGP30N60HS SGP30N60HS SGW30N60HS Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25°C TC = , Semiconductors SGP30N60HS SGP30N60HS SGW30N60HS Thermal Resistance Parameter Characteristic IGBT thermal resistance , ; time between short circuits: >1s. 2 Rev. 2.1 June 06 Power Semiconductors SGP30N60HS SGP30N60HS SGW30N60HS , SGW30N60HS 100A 100A tP=4µs 15µs IC, COLLECTOR CURRENT 80A IC, COLLECTOR CURRENT T C=80°C ... Original
datasheet

11 pages,
319.49 Kb

g30n60 g30n60hs SGP30N60HS SGW30N60HS SGP30N60HS abstract
datasheet frame
Abstract: SGP30N60HS SGP30N60HS SGW30N60HS High Speed IGBT in NPT-technology C · 30% lower Eoff compared to , SGW30N60HS Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25°C TC = 100°C , : >1s. 1 Rev. 2 Jan 05 Power Semiconductors SGP30N60HS SGP30N60HS SGW30N60HS Thermal Resistance Parameter , SGW30N60HS Switching Characteristic, Inductive Load, at Tj=25 °C Parameter IGBT Characteristic Turn-on delay , due to test circuit in Figure E. 3 Rev. 2 Jan 05 Power Semiconductors SGP30N60HS SGP30N60HS SGW30N60HS ... Original
datasheet

11 pages,
317.18 Kb

g30n60 g30n60hs SGP30N60HS SGW30N60HS SGP30N60HS abstract
datasheet frame

Fairchild Cross Reference Results

Fairchild Part Orderable Industry Part Manufacturer Type Family Description
FGH40N60SFD FGH40N60SFD Buy SGW30N60HS Buy Infineon (Siemens) Direct IGBT Discrete 600V, 40A Field Stop IGBT

Infineon (Siemens) Cross Reference Results

Infineon (Siemens) Part Status Industry Part Manufacturer Description
SGW30N60HS Buy FGH40N6S2 Buy Fairchild Semiconductor IGBT Discretes
SGW30N60HS Buy HGTG20N60A4 Buy Fairchild Semiconductor IGBT Discretes
SGW30N60HS Buy IXDH35N60B Buy IXYS IGBT Discretes
SGW30N60HS Buy IXGH24N60C Buy IXYS IGBT Discretes
SGW30N60HS Buy IXGH32N60C Buy IXYS IGBT Discretes
SGW30N60HS Buy stgw30nc60w Buy STMicroelectronics IGBT Discretes

Misc. Cross Reference Results

Part Similar Part Notes
SGW30N60HS Buy STGW35HF60WD Buy