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LTZ1000ACH#TRPBF Linear Technology IC 1-OUTPUT TWO TERM VOLTAGE REFERENCE, 7.15 V, MBCY8, 0.200 INCH, LEAD FREE, METAL CAN, TO-5, 8 PIN, Voltage Reference visit Linear Technology - Now Part of Analog Devices
LTZ1000CH#TRPBF Linear Technology IC 1-OUTPUT TWO TERM VOLTAGE REFERENCE, 7.15 V, MBCY8, 0.200 INCH, LEAD FREE, METAL CAN, TO-5, 8 PIN, Voltage Reference visit Linear Technology - Now Part of Analog Devices
LTZ1000 Linear Technology IC 1-OUTPUT TWO TERM VOLTAGE REFERENCE, 7.2 V, MBCY8, METAL CAN, TO-99, 8 PIN, Voltage Reference visit Linear Technology - Now Part of Analog Devices
LTZ1000A Linear Technology IC 1-OUTPUT TWO TERM VOLTAGE REFERENCE, 7.2 V, MBCY8, METAL CAN, TO-99, 8 PIN, Voltage Reference visit Linear Technology - Now Part of Analog Devices
LTZ1000ACH#PBF Linear Technology LTZ1000 - Ultra Precision Reference; Package: METAL CANS; Pins: 8; Temperature Range: 0°C to 70°C visit Linear Technology - Now Part of Analog Devices Buy
LTZ1000CH Linear Technology LTZ1000 - Ultra Precision Reference; Package: METAL CANS; Pins: 8; Temperature Range: 0°C to 70°C visit Linear Technology - Now Part of Analog Devices Buy

semikron skt 1000

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semikron skt 1000

Abstract: SKT1000 SKT 1000 Symbol Conditions Values Units Capsule Thyristor Line Thyristor SKT 1000 Features Typical Applications SKT 1 07-08-2003 JEL © by SEMIKRON SKT 1000 Fig. 1L , 07-08-2003 JEL © by SEMIKRON SKT 1000 Fig. 5 Thermal resistance vs. conduction angle Fig. 6 , vs. time 3 07-08-2003 JEL © by SEMIKRON SKT 1000 Fig. 9 Gate trigger characteristics , suitability. 4 07-08-2003 JEL © by SEMIKRON SEMIKRON
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SKT1000

Abstract: semikron thyristor skt 45 45 0 6 78 :( SKT 1 08-12-2005 NOS © by SEMIKRON SKT 1000 Fig. 1L Power , © by SEMIKRON SKT 1000 Fig. 5 Thermal resistance vs. conduction angle Fig. 6 On-state , 08-12-2005 NOS © by SEMIKRON SKT 1000 Fig. 9 Gate trigger characteristics Dimensions in mm , SKT 1000 "*,+ " 61!! 6@!! 1!! @!! C!! "*+5 "%*+ " 6!! 6A!! !! A!! !! 9*+, 0 1!! # ' , "3I I # # " # " # >34 >34 >34 >34 = = "N O 3G Capsule Thyristor Line Thyristor SKT 1000 9#" %
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Abstract: 45 0 6 78 :( SKT 1 08-12-2005 NOS © by SEMIKRON SKT 1000 power , © by SEMIKRON SKT 1000 power semiconductor power electronics igbt bridge rectifier diode , © by SEMIKRON SKT 1000 power semiconductor power electronics igbt bridge rectifier diode , SKT 1000 power semiconductor power electronics igbt bridge rectifier diode thyristor cib , "3I I # # " # " # >34 >34 >34 >34 = = "N O 3G Capsule Thyristor Line Thyristor SKT 1000 9#" % SEMIKRON
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semikron skt 1000

Abstract: 2 27-08-2003 IMP © by SEMIKRON SKT 1000 Fig. 5 Thermal resistance vs. conduction angle , overload current vs. time 3 27-08-2003 IMP © by SEMIKRON SKT 1000 Fig. 9 Gate trigger , SKT 1000 "*,+ " 61!! 6@!! 1!! @!! C!! "*+5 "%*+ " 6!! 6A!! !! A!! !! 9*+, 0 1!! # ' , " # " # >34 >34 >34 >34 = = "N O 3G Capsule Thyristor Line Thyristor SKT 1000 9#" % *+, 9,+ , ( ( ) * ( ( ""*+, - .!! "/ * 0 11 231 45 0 6 78 :( SKT 1 27-08-2003 IMP © by SEMIKRON
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semikron skt 1000

Abstract: SKT 1000 THYRISTOR BRIDGE,SCR,BRIDGE Symbol Conditions Values Units Capsule Thyristor Line Thyristor SKT 1000 Features Typical Applications SKT 1 08-12-2005 NOS © by SEMIKRON RECTIFIER,DIODE,THYRISTOR,MODULE Fig. 1L Power dissipation vs. on-state current , decrease Fig. 4 Transient thermal impedance vs. time 2 08-12-2005 NOS © by SEMIKRON SKT 1000 THYRISTOR BRIDGE,SCR,BRIDGE Fig. 5 Thermal resistance vs. conduction angle Fig. 6 On-state
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Abstract: SKT 1000 THYRISTOR BRIDGE,SCR,BRIDGE Symbol Conditions Values Units Capsule Thyristor Line Thyristor SKT 1000 Features Typical Applications SKT 1 06-08-2007 MAJ © by SEMIKRON RECTIFIER,DIODE,THYRISTOR,MODULE Fig. 1L Power dissipation vs. on-state current , decrease Fig. 4 Transient thermal impedance vs. time 2 06-08-2007 MAJ © by SEMIKRON SKT 1000 THYRISTOR BRIDGE,SCR,BRIDGE Fig. 5 Thermal resistance vs. conduction angle Fig. 6 On-state SEMIKRON
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semikron skt 1000

Abstract: SKT1000 SKT 1000 THYRISTOR BRIDGE,SCR,BRIDGE Symbol Conditions Values Units Capsule Thyristor Line Thyristor SKT 1000 Features Typical Applications* SKT 1 16-02-2009 MAY © by SEMIKRON RECTIFIER,DIODE,THYRISTOR,MODULE Fig. 1L Power dissipation vs. on-state current , decrease Fig. 4 Transient thermal impedance vs. time 2 16-02-2009 MAY © by SEMIKRON SKT 1000 THYRISTOR BRIDGE,SCR,BRIDGE Fig. 5 Thermal resistance vs. conduction angle Fig. 6 On-state
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semikron skt 1000

Abstract: 5w-k B 3 ­ 52 © by SEMIKRON SKT 1000, SKT 1200 6.7 / 6.7 / &DVH % $ ',1 % -('(& 72 , SKT 1000, SKT 1200 9560 9550 GYGW FU ,7506 PD[LPXP YDOXHV IRU FRQWLQXRXV RSHUDWLRQ 9'50 $ ,7$9 VLQ 7FDVH 9 9 9µV 6.7 6.7 '6& $ & $ & , ,.521 % $ % ± B 3 ­ 50 © by SEMIKRON © by SEMIKRON B 3 ­ 51 Fig. 6 b , (0,.521 % ± SEMIKRON
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SKT1000

Abstract: semikron skt 1000 . time Fig. 9 Gate trigger characteristics B 3 ­ 52 © by SEMIKRON SKT 1000, SKT 1200 6.7 , SKT 1000, SKT 1200 9560 9550 GYGW FU ,7506 PD[LPXP YDOXHV IRU FRQWLQXRXV RSHUDWLRQ , WHPSHUDWXUH FRQWURO N1 OEV J &DVH E\ 6(0,.521 % % ± B 3 ­ 50 © by SEMIKRON © by SEMIKRON B 3 ­ 51 Fig. 6 b On-state characteristics Fig. 7 a Power dissipation vs , GHOLYHU\ SHUIRUPDQFH RU VXLWDELOLW\ E\ 6(0,.521 % ± SEMIKRON
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semikron skt 1000

Abstract: © by SEMIKRON SKT 1000 THYRISTOR BRIDGE,SCR,BRIDGE Fig. 5 Thermal resistance vs. conduction , SKT 1000 THYRISTOR BRIDGE,SCR,BRIDGE $#&% $ 2,) 2>) $##%1 $#% $ 2/) 2?) 5#%& + /,) 6 7 , G G .G $.G G $ $ , ! SKT 1 12-03-2012 GIL © by SEMIKRON RECTIFIER,DIODE,THYRISTOR,MODULE Fig. 1L Power , Surge overload current vs. time 3 12-03-2012 GIL © by SEMIKRON RECTIFIER,DIODE,THYRISTOR
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semikron skt 1000

Abstract: thermal impedance vs. time 2 16-02-2009 MAY © by SEMIKRON SKT 1000 THYRISTOR BRIDGE,SCR , SKT 1000 THYRISTOR BRIDGE,SCR,BRIDGE "*,+ " 61!! 6@!! 1!! @!! C!! "*+5 "%*+ " 6!! 6A!! !! A!! !! , Capsule Thyristor Line Thyristor SKT 1000 9#" % *+, 9,+ G "9 "9'9) 9 %%; *% ' 3) '3) K B "H9 H9 , ( ( ) * ( ( ""*+, - .!! "/ * 0 11 231 45 0 6 78 :( SKT 1 16-02-2009 MAY © by SEMIKRON , © by SEMIKRON RECTIFIER,DIODE,THYRISTOR,MODULE Fig. 9 Gate trigger characteristics Dimensions
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Abstract: SKT 1000 THYRISTOR BRIDGE,SCR,BRIDGE CBED CBBDP C=BD C QKHH Q]HH C QNHH Q^HH :TBDE , '; Q f- )c( SKT 1000 # # # Typical Applications* # =3 '2(2& *20(&2, # # # , SKT 1000 THYRISTOR BRIDGE,SCR,BRIDGE Fig. 5 Thermal resistance vs. conduction angle Fig. 6 , 'M-c GWH 6 T-(6 C)-2, S + '210()06 72&*% ' +44&2U@ 3+-% ` QG SKT 1 12-03-2012 GIL © by SEMIKRON RECTIFIER,DIODE,THYRISTOR,MODULE Fig. 1L Power dissipation vs SEMIKRON
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SKT 2700

Abstract: semikron skt 900 2800 500 500 500 1000 1000 1000 1000 1000 1000 1000 SKT 1000/04 D SKT 1000/08 D ­ SKT 1000/12 E SKT 1000/14 E SKT 1000/16 E SKT 1000/18 E SKT 1000/22 E L2 SKT 1000/26 E L2 SKT 1000/28 , /SSC rec. 120; DSC/SSC DSC/SSC Rthch Tvj Tstg F SI units US units w SKT 1000 SKT 1200 SKT 1200/04 D ­ SKT 1200/12 D SKT 1200/12 E SKT 1200/14 E SKT 1200/16 E SKT 1200/18 E ­ ­ ­ SKT 1000 SKT 1200 1000 A 1200 A 19 000 A 16 500 A 1800 kA2s 1360 kA2s 30
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2sd 5200

Abstract: skt 450 SEMIKRON Symbol Conditions SKT 250 SKT 300 Itav sin. 180; (Tease = .) 250 A (85 °C) 300 A (93 °C , S1E D SEMIKRON INC fll3bb71 0GD34flfl DMT MSEKG - SEMIKRDN "iâ'"mâ'"! i r SKT 2SO SKT 300 , characteristics © by SEMIKRON B3-29 SIE D â  fll3bb?l DQGaMfl6) Tab SEMIKRON INC ISEK G 1000 A 800 600 h , SKT 2SD eoo 800 A 1000 0 'TAV 200 Flg. 7 a Power dissipation vs. on-state current 'tíov) 'O lTAv , 900 800 500 SKT 240/08 D SKT 340/08 D 1300 1200 500 SKT 240/12D SKT 340/12 D 1000 SKT 240/12 E SKT
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SKT300 2sd 5200 skt 450 skt 2500 semikron M24-P to-209ad SKT250/04 SKT250/12 SKT300/04 SKT300/08 0GD34

4,91 m r

Abstract: A10A 500 1000 SKT 491/12 D SKT 491/12 E SKT 551/12 D SKT 551/12 E 1500 1400 1000 SKT 491/14 E SKT 551/14 E 1700 1600 1000 SKT 491/16 E SKT 551/16 E 1900 1800 1000 SKT 491/18 E* SKT 551/18 E* Symbol Conditions , current vs. case temperature -SKT 491 SKT 551 â'"Tvi = 125 bC 1000 AyJjslOO Fig. 3 Recovered charge , ISEK G T-25-20 2000 1000 I I I I I I I I SKT SSI Xiup- T,; » 125 M2£ lyp. rrvc à l l , SIE D â  Ã13bb71 DDGBMTb IIb «SEKG SEMIKRON INC SEMIKRON Vrsm Vrrm Vdrm V dt Jo r Itrms
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4,91 m r A10A SKT551 semikron skt 100 skt semikron semikron skt 491 B3-39 B3-40

semikron skt 24

Abstract: skt semikron 50 A 19 A (95 °C) 25 A (74 °C) 32 A (72 °C) 500 ­ SKT 16/04 D SKT 24/04 D 500 SKT 10/06 D SKT 16/06 D* SKT 10 SKT 16 SKT 24 ­ 900 800 500 SKT 10/08 D SKT 16/08 D SKT 24/08 D 1300 1200 1000 SKT 10/12 E SKT 10/12 E* SKT 24/12 E* 1500 1400 1000 ­ SKT 16/14 E SKT 24/14 E 1700 1600 1000 ­ SKT 16/16 E SKT 24/16 E* 1900 1800 1000 ­ SKT 16/18 E SKT 24/18 E Symbol Conditions SKT 10 SKT
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semikron skt 24 skt 25 semikron semikron skt 10 skt semikron case semikron skt 50 12 semikron skt 400

semikron skt 240 120

Abstract: semikron skt 1000 °C) 450 A (57 °C) 500 400 500 SKT 240/04 D SKT 340/04 D 900 800 1000 SKT 240/08 E SKT 340/08 E 1300 1200 1000 SKT 240/12 E SKT 340/12 E 1500 1400 1000 SKT 240/14 E SKT 340/14 E 1700 1600 1000 SKT 240/16 E SKT 340/16 E 1900 1800 1000 SKT 240/18 E SKT 340/18 E 2100 2000 1000 SKT 240/20 E ­ 2300 2200 1000 SKT 240/22 E ­ Symbol Conditions SKT 240 ITAV sin. 180; (Tcase = . . .
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semikron skt 240 120 semikron skt 1000 semikron skt 240 semikron skt 240 e semikron skt 900 SKT240

skt 2500 semikron

Abstract: B334 13bb71 ÃÃQgM'ii SäT BISEKG SEMIKRON INC T-25-19 1500 a 1000 I I I I I I I I I SKT 340 â  Tv|-12525125 m t , V V/(is 380 A (60 °C) 450 A (57 °C) 500 400 500 SKT 240/04 D SKT 340/04 D 900 800 500 SKT 240/08 D SKT 340/08 D 1300 1200 500 SKT 240/12D SKT 340/12 D 1000 SKT 240/12 E SKT 340/12 E 1500 1400 1000 SKT 240/14 E SKT 340/14 E 1700 1600 1000 SKT 240/16 E SKT 340/16 E 1900 1800 1000 SKT 240/18 E , SIE D I SEMIKRON INC fll3bb?l DÃOBMTS 570 «SEKG SEMIKRON Vrsm Vrrm idvl Itrms (maximum
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B334 skt 2500 A/400 B3-35 B3-36

semikron skt 24

Abstract: 2418E 1500 1700 1900 19 A (95 °C) 25 A (74 °C) 32 A (72 °C) 500 ­ SKT 16/04 D SKT 24/04 D 500 500 SKT 10/06 D SKT 10/08 D SKT 16/06 D* SKT 16/08 D 1200 1400 1000 1000 SKT 10/12 E ­ SKT 16/12 E* SKT 16/14 E SKT 24/12 E* SKT 24/14 E 1600 1800 1000 1000 ­ ­ SKT 16/16 E SKT 16/18 E SKT 24/16 E* SKT 24/18 E SKT 10 SKT 16 SKT 24 ITAV sin , 370 330 680 550 450 380 1000 720 A A A2s A2s Tvj = 25 °C Tvj = 25 °C Tvj = 130 °C
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2418E SKT 1900 semikron skt 24 14 E semikron skt 40 skt24 semikron skt 80

SKT300

Abstract: SKT250 1200 200 1000 SKT 215/12 C SKT 215/12 E SKT 250/12 C SKT 250/12 E SKT 300/12 C SKT300/12 E 1500 1400 1000 SKT 215/14 E SKT 250/14 E SKT 300/14 E 1700 1600 200 1000 SKT 215/16 C SKT 215/16 E SKT 250/16 C , 1000 600 400 200 Q,r 40 I II! Ill SKT 300 L d'T df 2 IE; iâ'"iâ'"r Jtm = i i i -2000A , 0 I al3tt71 a001S" "" I SEMIKRON 2500 W 1500 500 PTAV 0 II 11 111 SKT 215 - 4/J- ec , SEMIKRON INC ise o | ai3bb?i aaaisas i | 5EMIKRDN Vrsm Vrrm Vdrm (dv) V dt /cr Itrms (maximum
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SKT250 SKT30 SKT300-06C SKT250/08C SKT250-06C SKT300-08C SKT250/06 SKT300/06 SKT250/16 SKT215 A/250
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