NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: : Characteristic curve of CeraDiodes 1.1 Leakage current @ Semiconductor diode A semiconductor diode is , Semiconductor diode The voltage VRM resembles the maximum acceptable operating voltage. The current IRM that , versus semiconductor diodes 1.3 Breakdown voltage @ Semiconductor diode If the diode voltage , current of IR = 1 mA. 1.4 Clamping voltage @ Semiconductor diode The diode restricts the , is designated as the clamping voltage. 1.5 Forward working range @ Semiconductor diode As the ... | Original |
4 pages, |
Semiconductor diodes Characteristics curve of diode The Diode datasheet abstract |
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| Abstract: DEFENSE LOGISTICS AGENCY DEFENSE SUPPLY CENTER, COLUMBUS POST OFFICE BOX 3990 COLUMBUS, OH 43216-5000 IN REPLY REFER TO DSCC-VAC (Mr. Barone/DSN 850-0510 / (614)692-0510) MEMORANDUM FOR VSS (Mr. Art Hudson) SUBJECT: Dated Engineering Practices (EP) Study on Test Method 2073, Visual Inspection for Die (Semiconductor Diode) - Project Number: 5961- 0197 Findings and recommendations , objective of this study is to improve test method 2073, Visual Inspection for Die (Semiconductor Diode). ... | Original |
3 pages, |
MIL-STD-750 method 2073 datasheet abstract |
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| Abstract: 1 18 April 1966 MILITARY SPECIFICATION SEMICONDUCTOR DIODE, SILICON, HIGH-VOLTAGE TYPE 1N2361 1N2361 , SUPERSEDING MIL-S-19500/J MIL-S-19500/J 87(SigC) 13 March 1961 MILITARY SPECIFICATION SEMICONDUCTOR DIODE, SILICON , REQUIREMENTS 3.1 Requirements. - Requirements for the semiconductor diode shall be in accordance with , semiconductor diode shall be of the design, construction, and physical dimensions specified in Figure 1 herein. 3.3.1 Operating position.- The semiconductor diode shall be capable of proper operation in any posiMon. ... | OCR Scan |
11 pages, |
military part marking symbols jan MIL marking diode centrifuge A881 1N236 diode k625 1N2361 L87A MIL-S-19500/187A MIL-S-19500/1R7A MIL-S-19500/187A abstract |
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| Abstract: Zener diode. The large number of micro CeraDiodes makes this component much more rugged with respect to ESD then a semiconductor diode, which has only one available pn-junction. Sintering zinc oxide , semiconductor diode from a competitor (assessment criterion: breakdown voltage VBR @ 1 mA and operating voltage VDC,max = 12 V as limit). The breakdown voltage VBR @ 1 mA of the semiconductor diode degrades after , times of < 0.5 ns. Semiconductor diodes have a greater parasitic inductance, with typical response times ... | Original |
7 pages, |
pn junction diode structure CDS4C12GTA datasheet abstract |
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| Abstract: benefits. In many cases, a semiconductor diode can be replaced by a CeraDiode on a one-to-one basis , A SEMICONDUCTOR DIODE In semiconductor diodes, the ESD protective properties already begin to , filter functions. In this way a CeraDiode can replace not only a semiconductor diode, but also a , CeraDiodes are constant up to an operating temperature of 85°C. This contrasts with semiconductor diodes , superior to semiconductor solutions. The CeraDiodes suitable for USB applications are listed in the ... | Original |
3 pages, |
GTA1 CDS4C12 CDA4C16 "1394 Firewire" 1394 firewire to USB Connection Diagram datasheet abstract |
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| Abstract: capacitance for RFI suppression and high-frequency filtering. One CeraDiode can replace a semiconductor diode , Resistor + capacitor + semiconductor diode replaced by one CeraDiode 4 Surge current capability , 30 V Single and array surface mount package in case sizes single 0201 (no equivalent semiconductor package available) single 0402 (semiconductor package SOD-723) single 0603 (semiconductor package SOD-523) single 1003 (semiconductor package SOD-323) array 0506 (semiconductor package SOT-666) array ... | Original |
4 pages, |
datasheet abstract |
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| Abstract: MIL-S-19500/335 MIL-S-19500/335(EL) 28 June 1965 MILITARY SPECIFICATION SEMICONDUCTOR DIODE, SILICON, VOLTAGE , , and physical dimensions specified in Figure 1 herein. Each semiconductor diode shall be furnished with , requirements for this class (Voltage Reference, Temperature Compensating) and style of semiconductor diode , this class of semiconductor diode(s), and where equal or better characteristic-performance is required (relative to the 1N430A 1N430A, 1N430B 1N430B diodes), it is recommended that Semiconductor Diode Type 1N3154 1N3154, 1N3155 1N3155 ... | OCR Scan |
10 pages, |
hp 5960 1N433B 1N430B 1N430A 1N433A MIL-S-19500/335 N430B MIL-S-19500/335 abstract |
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| Abstract: requirements for a silicon, semiconductor diode for use as a mixer (first-detector stage) device in S-Band (see , for the semiconductor diode shall be in accordance with Specification MIL-S-19500 MIL-S-19500, and as otherwise , Specification MIL^-S-19500 -S-19500. 3.3 Design and construction. The semiconductor diode shall be of the design , assembly). 3.3.2 Polarity indication. The cathode-terminal end of the semiconductor diode shall be , characteristics. The semiconductor diode performance characteristics shall be as specified in tables I, II and ... | OCR Scan |
11 pages, |
1N831A 1N831A abstract |
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| Abstract: National Semiconductor Diode Data Computer Diodes (Glass Package) Device No. Package No. VRRM V Min Ir nA @ Max Vr V Vp V @ Min Max If mA C PP Max trr ne Max Teat Cond. Proc. No. 1N625 1N625 1N914 1N914 DO-35 DO-35 DO-35 DO-35 30 1000 20 1.5 1000 (Note 1) 100 25 5000 20 75 1.0 10 (Note 2) D4 04 1N914A 1N914A DO-35 DO-35 100 25 5000 20 75 1.0 20 (Note 2) D4 1N914B 1N914B DO-35 DO-35 100 25 5000 20 75 0.72 1.0 5 100 (Note 2) D4 1N916 1N916 DO-35 DO-35 100 25 5000 20 75 1.0 10 (Note 2) D4 ... | OCR Scan |
1 pages, |
IR diode D4 1N3600 1N625 1N914 1N914A 1N914B 1N916 1N916A 1N916B 1N3064 1N4147 diode 1n4009 1n4009 914B 1N918 datasheet abstract |
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| Abstract: PYE-TM C Semiconductors Light Emitting Diodes 521-9165 and 521-9166 Light Emitting Diodes REFERENCE TABLE Code Description Stock No. 521-9165 Red Diffused L.E.D. 33168F 33168F 521-9166 Cleat Diffused L.E.D. 33169D 33169D DESCRIPTION This device has many applications, such as: film annotation, circuit status indicators and alphanumeric displays. The 521-9165 and 521-9166 solid state lamps consist of a gallium arsenide phosphide semiconductor diode completely encapsulated in high grade plastic. The base has a flat ... | OCR Scan |
1 pages, |
521-9165 33168F 33169D 33168F abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
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| Demo Circuit 662 ON Semiconductor DIODES Inc. 10th Part Field SHDN VOUT Schottky Rectifier, Powermite Diode Inc. Schottky (Comm-Anode) Diode Schottky Rect., Microsemi Taiyo Yuden Capacitor, 3rd Part Field 2 Turret NoRsense DC/DC Controller Jumper, GND FIELD SIGNAL GND SIGNAL Zener Diode, On Semi. Power High ) Schottky Diode, Central Semi. Corp XSTR, Diodes Inc. Demo Circuit 553 3-Output Power Supply(TFT-LCD) Dgnd .5K OHMS 1% 1/16W 1/16W 1/16W 1/16W RES, 0402 100K OHMS 5% 1/16W 1/16W 1/16W 1/16W ON SEMI. MBRM140T3 MBRM140T3 MBRM140T3 MBRM140T3 DIODE, RECTIFIER, SCHOTTLY DIODES www.datasheetarchive.com/download/76688260-364553ZC/1092a.zip (1092A-2.DSN) |
Linear | 22/09/2009 | 521.06 Kb | ZIP | 1092a.zip |
| Semiconductors * * DIODE SPICE LIBRARY ( DIODE CHIPS ONLY * * * This library contains the following * * SIEMENS diode chips * * * * * Siemens Varactor Diodes * * * * * BB515 BB515 BB515 BB515 / BB535 BB535 BB535 BB535 / BB555 BB555 BB555 BB555 Diode Model .MODEL D197 D (IS=2.276E-15 276E-15 276E-15 276E-15 N=1.063 RS=.2099 XTI=3 EG=1.11 CJO=24 * * BBY51x Series Diode Model .MODEL D340 D(IS=3.3E-15 3E-15 3E-15 3E-15 N=1.115 RS=0.06 XTI=3 EG=1.11 CJO=7.32E-12 32E-12 32E-12 32E-12 + M=0 www.datasheetarchive.com/files/infineon/ehdata/nl_diode/chips/sidichip.lib |
Infineon | 17/09/1998 | 7.7 Kb | LIB | sidichip.lib |
| PWMs .lib "phil_bjt.lib" ; Philips Semiconductors bipolar jfets .lib "phil_diode.lib" ; Philips Semiconductors diodes .lib "phil_fet.lib" ; Philips Semiconductors mosfets .lib .lib" ; Harris, Analog Division op-amps, transistor a .lib "infineon.lib" ; Infineon Semiconductors _semi.lib" ; National Semiconductors op-amps .lib "nec_mos.lib" ; NEC Power MOSFETs .lib "on_amp.lib" ; Motorola op-amps .lib "on_bjt.lib" ; ON bipolar transistors .lib "on_diode www.datasheetarchive.com/files/spicemodels/misc/vendor.lib |
Spice Models | 07/08/2009 | 5.96 Kb | LIB | vendor.lib |
| contain integrated circuits Semiconductor diodes that use electron tunneling go on sale only 6 years Semiconductor, Product, Families, Topical, Product Information hexfet powertrain integrated circuit photovoltaic relay microelectronic relay diodes rectifiers inverters thyristors IGBT transistors mosfet Robert Noyce found Fairchild Semiconductor Corporation 1958 Bell introduces the Modem dataphone Jack Kilby of Fairchild Semiconductor invents the integrated circuit Jan 31, the U.S. launches its www.datasheetarchive.com/files/international-rectifier/docs/wcd00002/wcd0021e.htm |
International Rectifier | 06/10/1998 | 18.44 Kb | HTM | wcd0021e.htm |
| polymer film or ceramic or sintered metal-oxide structures. Semiconductor diodes used as rectifiers, switches, voltage ëclampsí etc. Semiconductor switches: bipolar or MOS-based Resistors: metal . IR has evolved an assembly technology for power semiconductors which assures survival of the www.datasheetarchive.com/files/international-rectifier/docs/wcd00001/wcd001e4.htm |
International Rectifier | 06/10/1998 | 22.81 Kb | HTM | wcd001e4.htm |
| *version 8.0 2094357574 @index symloc 1N400X 1N400X 1N400X 1N400X 0 142 symloc MBRSSMB 142 70 symloc MBRSSMC 212 70 symloc MMBD 282 69 symloc MMBZ 351 69 symloc MMSD 420 71 symloc MMSZ 491 71 symloc 1N4001 1N4001 1N4001 1N4001:1N400X 1N400X 1N400X 1N400X 562 27 symloc 1N4002 1N4002 1N4002 1N4002:1N400X 1N400X 1N400X 1N400X 589 27 symloc 1N4003 1N4003 1N4003 1N4003:1N400X 1N400X 1N400X 1N400X 616 27 symloc 1N4004 1N4004 1N4004 1N4004:1N400X 1N400X 1N400X 1N400X 643 27 symloc 1N4006 1N4006 1N4006 1N4006:1N400X 1N400X 1N400X 1N400X 670 27 symloc 1N4005 1N4005 1N4005 1N4005:1N400X 1N400X 1N400X 1N400X 697 27 symloc 1N4007 1N4007 1N4007 1N4007:1N400X 1N400X 1N400X 1N400X 724 27 symloc 1N5817G 1N5817G 1N5817G 1N5817G 751 72 symloc 1N5818G 1N5818G 1N5818G 1N5818G 823 72 symloc 1N5819G 1N5819G 1N5819G 1N5819G 895 72 symloc 1N5820G 1N5820G 1N5820G 1N5820G 967 75 symloc 1N5821G 1N5821G 1N5821G 1N5821G 1042 75 symloc 1N5822G 1N5822G 1N5822G 1N5822G 1117 75 www.datasheetarchive.com/download/28647131-605842ZC/ncp4302spicemodel.rev1.zip (On Semiconductor diodes.plb) |
On Semiconductor | 30/03/2009 | 5244.93 Kb | ZIP | ncp4302spicemodel.rev1.zip |
| Discrete & RF Semiconductors * * DIODE SPICE LIBRARY * * * * Filename: s-diode.lib * * Version: 4 * * * This library contains the following Infineon Technologies Diodes * * * * * BAT240A BAT240A BAT240A BAT240A Diode Chip Model .MODEL D364 D(IS=146N RS=2.18 N=1.07 XTI=4.25 EG=.650 + CJO=57.0P M=.495 VJ=.390 FC=.500 BV=240 IBV=5.00U TT=120P) * Extracted By: * SIEMENS Semiconductors * HL HF PE www.datasheetarchive.com/files/spicemodels/misc/spice_model_cd/vendor list/infineon/other/diode/s_diode.lib |
Spice Models | 29/07/2012 | 21.94 Kb | LIB | s_diode.lib |
| Semiconductors * * DIODE SPICE LIBRARY * * * * Filename: s-diode.lib * * Version: 4 * * * This library contains the following SIEMENS Diodes * * * * * * BAT240A BAT240A BAT240A BAT240A Diode Chip Model .MODEL D364 D(IS=146N RS=2.18 N=1.07 XTI=4.25 EG=.650 + CJO=57.0P M=.495 VJ=.390 FC=.500 BV=240 IBV=5.00U TT=120P) * Extracted By: * SIEMENS Semiconductors * HL HF PE www.datasheetarchive.com/files/infineon/ehdata/spice/s_diode.lib |
Infineon | 17/09/1998 | 21.96 Kb | LIB | s_diode.lib |
| Semiconductors * * DIODE SPICE LIBRARY * * * * Filename: s-diode.lib * * Version: 4 * * * This library contains the following SIEMENS Diodes * * * * * * BAT240A BAT240A BAT240A BAT240A Diode Chip Model .MODEL D364/SIE D364/SIE D364/SIE D364/SIE D(IS=146N RS=2.18 N=1.07 XTI=4.25 EG=.650 + CJO=57.0P M=.495 VJ=.390 FC=.500 BV=240 IBV=5.00U TT=120P) * Extracted By: * SIEMENS Semiconductors * HL HF PE www.datasheetarchive.com/files/spicemodels/misc/spice_model_cd/vendor list/siemens/s_diode.lib |
Spice Models | 29/07/2012 | 22.33 Kb | LIB | s_diode.lib |
| + IBV = 1E-3 * Creation Nov-12-2002 Fairchild Semiconductor *$ * Diode Model * Creation: Mar-31-2003 Fairchild Semiconductor *$ * Discrete Bipolar Electrical Circuit Model : Jan-03-2003 Fairchild Semiconductor *$ * Discrete Bipolar Electrical Circuit Model : Jan-03-2003 Fairchild Semiconductor *$ * Discrete Bipolar Electrical Circuit Model : Jan-03-2003 Fairchild Semiconductor *$ * Discrete Bipolar Electrical Circuit Model www.datasheetarchive.com/files/fairchild/pdfs/models actual/bdx33_a_b_c.lib |
Fairchild | 22/08/2003 | 25.18 Kb | LIB | bdx33_a_b_c.lib |