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Part Manufacturer Description Datasheet BUY
IRF840STRRPBF Vishay Siliconix Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 visit Digikey
IRF840LCSPBF Vishay Siliconix Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 visit Digikey
IRF840LPBF Vishay Siliconix TRANSISTOR 8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, ROHS COMPLIANT, TO-262, I2PAK-3, FET General Purpose Power visit Digikey
IRF840ASTRLPBF Vishay Siliconix Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 visit Digikey
IRF840STRLPBF Vishay Siliconix Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 visit Digikey
IRF840APBF Vishay Siliconix Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN visit Digikey

sec irf840

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: Wave Pulse Duration FAIRCHILD SEMICONDUCTORâ"¢ [sec] N-CHANNEL POWER MOSFET IRF840 Fig , IRF840 Advanced Power MOSFET FEATURES B V DSS - 500 V ^D S (o n ) = 0 .8 5 Ã2 o , Max. Units 0.93 - 62.5 °C/W N-CHANNEL POWER MOSFET IRF840 Electrical , (4) N-CHANNEL POWER MOSFET IRF840 Fig 1. Output Characteristics Fig 2. Transfer , ta l Gäbe Charge [rC] N-CHANNEL POWER MOSFET IRF840 Fig 7. Breakdown Voltage vs -
OCR Scan
IRF840 MOSFET SEC IRF 640
Abstract: Advanced Power MOSFET IRF840 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide , lD = 8 A This Material Copyrighted By Its Respective Manufacturer IRF840 N-CHANNEL POWER MOSFET , IRF840 Figi. Output Characteristics Fig 2. Transfer Characteristics irf ici1 , Drain-axirÅ" Vitage [V , Manufacturer IRF840 N-CHANNEL POWER MOSFET Fig 7. Breakdown Voltage vs. Temperature Fig 8. On-Resistance , [=C] Fig 11. Thermal Response 10"J 10"^ 10"1 10" Square Wave Pulse Duration [sec] FAIRCHILD -
OCR Scan
MOSFET IRF840 power MOSFET IRF840 IRF840 n-channel mosfet IRF 250V 100A mosfet-irf840 IRF 640 mosfet
Abstract: .) @ VDS = 500V Lower RDS(ON): 0.638 (Typ.) 1 2 3 IRF840 BVDSS = 500 V RDS(on) = 0.85 ID = 8 A , -Max. 0.93 -62.5 °C/W Units Rev. B ©1999 Fairchild Semiconductor Corporation IRF840 , . Output Characteristics VGS 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V Top : IRF840 Fig 2 , ] IRF840 Fig 7. Breakdown Voltage vs. Temperature 1 . 2 3 . 0 1&+$11(/ 32:(5 026)(7 Fig 8 , - 5 10- 4 10- 3 10- 2 t1 t2 10- 1 100 101 t1 , Square Wave Pulse Duration [sec Fairchild Semiconductor
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Abstract: .) @ V D S = 500V Lower Rds(on): 0.638£2 (Typ.) a B ^D S S IRF840 - 500 V 0.85Q ^DS(on) = 00 , o rp o ra tio n IRF840 Electrical Characteristics (Tc=25°c unless otherwise specified) Symbol , FAIRCHILD SEMICONDUCTORTM N-CHANNEL POWER MOSFET Fig 1. Output Characteristics IRF840 Fig 2 , IRF840 Fig 7. Breakdown Voltage vs. Temperature N-CHANNEL POWER MOSFET Fig 8. On-Resistance vs , Max. 2. Duty Factor, D=t1/t2 r u i io_J io~¿ io-1 iou [sec] Square Wave Pulse -
OCR Scan
Abstract: -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) Figure 11. Normalized , /CEF840N CROSS REFERENCE VDSS Fairchild IR ST FQP9N50 IRF840 IRF840 FQB9N50 Chino-Excel Technology
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CEP840N CEB840N CEI840N CEF840N FQI9N50 testing smps circuit Transistor IRF840 500V 8 TO220 power supply IRF840 APPLICATION ssm840p CEP840N/CEB840N CEI840N/CEF840N
Abstract: , 10 sec) . 260°C Thermal Resistance (JA ) Plastic DIP , = 1 × 48V × 14 × 5u sec 471 = 2.2V L NP nCT 2 20uH 90 200 2 CSS = 5ms × (10) where , 2.37k Q8 CR4 IRF840 1N4747 D5 HFA08TB60 R10 10k D9 1N5818 R11 10 C116 R101 470nF 10.2k C106 3.3nF C3 1uF D8 1N5818 R6 10 R15 100m 5W R1 10k Q7 IRF840 , Q8 IRF840 D16 1N5818 T3 R38 10k Q1 IRF840 D20 1N5818 C15 4.7uF TL431 C7 Micro Linear
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ML4826 IEC1000-3-2 ML4826-2 Q104 pulse width modulation with ramp input ml4826 applications ml4826ip-2 ml4826cp2 ML4826-1
Abstract: (Soldering, 10 sec) . 260°C Thermal Resistance (JA) Plastic DIP , VSC = 1 × OUT × S × TS × SENSE = 1 × 48V × 14 × 5u sec 471 = 2.2V 200 2 20uH 90 L NP nCT 2 , BEAD R110 2.37k Q8 CR4 IRF840 1N4747 D5 HFA08TB60 R10 10k D9 1N5818 R11 10 C116 1.0uF R1 10k Q7 IRF840 L1 420uH D1 1N4747 F1 8A R115 R114 8.63k 52.3k , D21A MBR20100CT-ND C17 470pF R26 10k Q8 IRF840 D16 1N5818 T3 R38 10k Q1 Fairchild Semiconductor
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2N2222 irf840 power supply Application of irf840 BR1 6A IN4148 4826IS-1 ML4826IS-2
Abstract: 10 Sec) . 260°C Thermal Resistance (JA ) Plastic Power DIP , DIODE 15uH + 100uF 25V VCC 5.1, 1/4W IRF840 T3 10T 1uF 100k 1/4W 1uF 0.33uF 630V 4T 4T 2 , , 200V ML4818 0.1uF T2 10T 0.01uF 1kV IRF840 5.1, 1/4W 1 24 23 22 2 3 1uF IRF840 5.1, 1/4W 10T 1u F T3 10T 1N5818 + VOUT, 15V, 13A ­ IC2 1k,1/4W MOC8102 IRF840 1k POT 510 1/4W ML4818 120pF 5.1k 1 Micro Linear
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SCHEMATIC POWER SUPPLY irf840 in5248 irf840 mosfet drive circuit diagram ML4818CP ML4818CS
Abstract: , 10 sec) . 260°C Thermal Resistance (JA ) Plastic DIP , × 1 VFB ­ 1.5V 2 L NP nCT R V N VSC = 1 × OUT × S × TS × SENSE = 1 × 48V × 14 × 5u sec 471 = , L1 420uH D5 HFA08TB60 Q8 CR4 IRF840 1N4747 R12 381k D19 1N5819 R41 10 Q1 IRF840 Q2 IRF840 T2 R110 , D17B 1N4747 Q7 IRF840 D1 1N4747 R1 10k R37 200 R15 100m 5W R6 10 D9 1N5818 FERRITE BEAD AC INPUT 85 , VS RTN IN B R46 200 R14B 39k 2W Q9 2N2907 D10 1N4747 R14A 39k 2W R29 10 D12 1N5819 Q8 IRF840 NC Micro Linear
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4x1N4148 2N2907 application notes ML4826CS-1 Micro Linear Application Note 33 pfc AC TO DC BY irf840
Abstract: , 10 sec) . 260°C Thermal Resistance (JA ) Plastic DIP , = 1 × 48V × 14 × 5u sec 471 = 2.2V L NP nCT 2 20uH 90 200 2 CSS = 5ms × (10) where , 2.37k Q8 CR4 IRF840 1N4747 D5 HFA08TB60 R10 10k D9 1N5818 R11 10 C116 R101 470nF 10.2k C106 3.3nF C3 1uF D8 1N5818 R6 10 R15 100m 5W R1 10k Q7 IRF840 , Q8 IRF840 D16 1N5818 T3 R38 10k Q1 IRF840 D20 1N5818 C15 4.7uF TL431 C7 Micro Linear
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T32001 Application of irf840 constant current ML4826CP IRF-840 2N2222 capacitance Micro Linear ML4826 ML4826IP-1 ML4826IS-1 DS4826-01
Abstract: 10 Sec) . 260°C Thermal Resistance (JA) Plastic Power DIP , IN5248 10T 4T 4T MUR150 T2 10T IRF840 5.1, 1/4W 1N4148 39 1/4W 10T IRF840 5.1, 1/4W MUR150 200uH T2 1N5818 10 T4 T1 1T 80T T1 45T 0.33uF 630V , IRF840 T3 10T 5.1, 1/4W SCHOTTKY DIODE 10T IRF840 5.1, 1/4W + + VCC 15uH Fairchild Semiconductor
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soft start circuit 555 timer fuse 5a 250v Quarz 4 MHz soft start and stop circuit 555 timer irf840 equivalent IRF840 complementary
Abstract: 10 Sec) . 260°C Thermal Resistance (JA ) Plastic Power DIP , 1N5818 VCC 2 x IN5248 10T 4T 4T MUR150 T2 10T IRF840 5.1, 1/4W 1N4148 39 1/4W 10T IRF840 5.1, 1/4W MUR150 200uH T2 1N5818 10 T4 T1 1T 80T T1 , 240k 1/4W IRF840 T3 10T 5.1, 1/4W SCHOTTKY DIODE 10T IRF840 5.1, 1/4W + + Micro Linear
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t flip flop SCHEMATIC irf840 Switching Application of irf840 irf840 pwm amp 680uF 200V 1N5406 DS4818-01
Abstract: 10 Sec) . 260°C Thermal Resistance (JA ) Plastic Power DIP , 1N5818 VCC 2 x IN5248 10T 4T 4T MUR150 T2 10T IRF840 5.1, 1/4W 1N4148 39 1/4W 10T IRF840 5.1, 1/4W MUR150 200uH T2 1N5818 10 T4 T1 1T 80T T1 , 240k 1/4W IRF840 T3 10T 5.1, 1/4W SCHOTTKY DIODE 10T IRF840 5.1, 1/4W + + Micro Linear
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IRF840 application analog switch circuit using mosfet
Abstract: , 10 sec) . 260°C Thermal Resistance (JA) Plastic DIP , SENSE = 1 × 48V × 14 × 5u sec 471 = 2.2V 200 2 20uH 90 L NP nCT 2 It is important that the time , HFA08TB60 Q8 CR4 IRF840 1N4747 R12 381k D19 1N5819 R41 10 Q1 IRF840 Q2 IRF840 T2 R110 2.37k C109 1nF R44 200 , IRF840 D1 1N4747 R1 10k R37 200 R15 100m 5W R6 10 D9 1N5818 FERRITE BEAD AC INPUT 85 TO 265VAC , 200 R14B 39k 2W Q9 2N2907 D10 1N4747 R14A 39k 2W R29 10 D12 1N5819 Q8 IRF840 NC D15 BYM26C Fairchild Semiconductor
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Abstract: . ­65×C to 150×C Lead Temperature (soldering 10 sec.) . 260 × C Thermal , L1 PGND D7 1N4148 NP T1 R6 4.75k UI ML4819 R11 91 C4 6800pF Q1 IRF840 R12 10 1 ISENSE A 2 OVP 3 GM , 11 R20 7.5 Q3 IRF840 VREF C9 C11 1uF 0.1uF C6 1000pF D6 MUR850 POWER FACTOR CORRECTION R1 330k , VOUT­ R22 10 R23, 100 R25 1 C14 2200pF R24 1 MOC 8102 C20 U3 TL431 0.1uF C19 4.7uF Q3 IRF840 R27 1.2k , bifilar Core: Ferroxcube 4229-3C8 Pri. 44 Turns #18 Litz wire Sec. 4 Turns of copper strip Aux. 2 Turns Micro Linear
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D83-004 d83-004k d83004 Diode D83-004 d83 004 768t188 ML4812 ML4819CP ML4819CS DS4819-01
Abstract: Pri. 44 Turns #18 Litz wire Sec. 4 Turns of copper strip Aux. 2 Turns #24 AWG Q1-Q3 IRF840 , . ­65×C to 150×C Lead Temperature (soldering 10 sec.) . 260×C Thermal , 1uF R25 1 R24 1 C4 6800pF Q1 IRF840 T1 D6 MUR850 1N5406 D5 R23, 100 , Q3 IRF840 T3 Q3 IRF840 MOC 8102 U3 TL431 U2 2.26k R29 0.1uF C20 R26 Micro Linear
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d83-004 diode D83 ZENER inductor 2mH 4 Amp single phase SPWM IC d83004k TL431 PLE
Abstract: Temperature Range . ­65°C to 150°C Lead Temperature (soldering 10 sec , Q1 IRF840 T1 D6 MUR850 1N5406 D5 R23, 100 D11 MUR150 D10 1N4148 R19, 3k NP L1 OUT R12 10 D7 1N4148 STARTUP CIRCUIT Q3 IRF840 T3 Q3 IRF840 MOC , : Ferroxcube 4229-3C8 Pri. 44 Turns #18 Litz wire Sec. 4 Turns of copper strip Aux. 2 Turns #24 AWG Q1-Q3 IRF840 Q4, Q5 2N2222 Q6 IRF821 U2 MOC8102 R1 330k U3 TL431 R2, R31 Fairchild Semiconductor
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diode D83 004 MUR850 diode SPWM sine ferroxcube 768T188 D83 ZENER datasheet Ferroxcube 3C8
Abstract: required on-time of the MOSFET transistor can be calculated: Ton = D 0 .056 = = 3 .5 μ sec Fosc , ' 9.6V ) * 3.5μ sec = = 4.6mH 0.3 * Ileds 0.3 * 350 mA Setting Light Output When the buck , 51K GND 110V AC SF36 CS 22u/400V 270K IN4004 10nF 560K GATE FB IRF840 MOSDESIGN Semiconductor
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M1910B/C M1910C M1910B 30VDC IRF630 30VIN
Abstract: required on-time of the MOSFET transistor can be calculated: Ton = D 0 .056 = = 3 .5 μ sec Fosc , ' 9.6V ) * 3.5μ sec = = 4.6mH 0.3 * Ileds 0.3 * 350 mA Setting Light Output When the buck , 51K GND 110V AC SF36 CS 22u/400V 270K IN4004 10nF 560K GATE FB IRF840 MOSDESIGN Semiconductor
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ac dc led constant current driver IN4007 015X45
Abstract: (Soldering, 10 sec) . 260°C Thermal Resistance (JA) Plastic DIP , charge of 110nC at 100kHz (1 IRF840 driving a total gate charge of 110nC at 100kHz (1 IRF840 MOSFET and , D1 8A, 600V "FRED " Diode L1 3mH Q2 R17 IRF830 33 Q1 IRF840 R2A 357k BR1 4A Fairchild Semiconductor
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ML4801 IEC1000-2-3 power supply IRF830 APPLICATION 1N54 S16N gain modulator ML4801CS ML4801IP ML4801IS
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