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ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73127RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73096RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
HFA3102B96 Intersil Corporation C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MS-012AB, MS-012AB, 14 PIN visit Intersil
HS0-6254RH-Q Intersil Corporation 5 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, DIE-16 visit Intersil

sd 431 transistor

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sd 431 transistor

Abstract: SD1422 Technology iviwi iivjwi I iv«i jr v ilj « #-» â  u^t/u i v i vr ^ _ ^ ^ Tel: (215) 631-9840 SD 1422 RF & MICROWAVE TRANSISTORS 450 - 512MHz CLASS C, MOBILE APPLICATIONS â  CLASS C TRANSISTOR â , METALLIZATION .500 6LFL (M111) epoxy sealed ORDER CODE BRANDING SD1422 SD1422 DESCRIPTION The SD 1422 is a 12.5Vepitaxial silicon NPN planar transistor designed for broadband applications in the 450-512MHz land mobile , 431 SD1422 PACKAGE MECHANICAL DATA .500 6LPL Minimum Inches/mm Maximum inches/mm A .150/3.43
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VK200 sd 431 transistor transistor c5 178 x1 transistor 2 SD 427 transistor voltronics jr UNELCO 512MH 470MH 450-512MH S88SD-12207 25VCD

diode cc 3053

Abstract: cc 3053 -19500/374C 01 May 1995 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON , for transistor types 2N3996 and 2N3997. 2 MIL-PRF-19500/374D Dimensions Symbol Inches , 1.02 .040 .065 1.02 1.65 5 7 1.65 T1 3 SD .190-32 UNF-2A 4 8 Z , dimension does not include sealing flanges. 7. SU is the length of incomplete or undercut threads. 8. SD , equivalent to x symbology. FIGURE 1. Physical dimensions for transistor types 2N3996 and 2N3997 -
API Electronics
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2N3999 2N3998 diode cc 3053 cc 3053 2n3996 equivalent transistor tms 374c MIL-PRF-19500 TRANSISTOR chip die npn transistor MIL-S-19500/374C MIL-PRF-19500

01903

Abstract: sd 431 transistor -19500/315E 10 March 1992 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON , FIGURE 1. Physical dimensions of transistor type 2N2880 (TO-59). 3 MIL-PRF-19500/315F Dimension , T1 0.040 0.070 1.02 1.78 SD 0.190-32UNF-2A 4 10 4 PS1 0.090 0.110 , used. 4. SD is the outer diameter of coated threads. Reference: Screw thread standards for Federal , hexagonal is optional. FIGURE 1. Physical dimensions of transistor type 2N2880 (TO-59)- Continued. 4
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01903 JANTXV 2N2880 equivalent 2n3749 sd 1074 transistor Stancor MIL-PRF19500 MIL-S-19500/315E 2N3749

transistor sl 431

Abstract: UNF-2A -19500/374D 29 June 1999 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON , dimensions for transistor types 2N3996 and 2N3997. 3 MIL-PRF-19500/374E Symbol CH A1 CD CD1 HF PS PS1 HT OAH UD SL SU T T1 SD Z Z1 * * Dimensions Inches Millimeters Min Max , flanges. 7. SU is the length of incomplete or undercut threads. 8. SD is the pitch diameter of coated , Y14.5M, diameters are equivalent to x symbology. * FIGURE 1. Physical dimensions for transistor
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transistor sl 431 UNF-2A C-2688 2N3997 JAN to-111 JANHCB2N3996 JANHCA2N3996 JANHCA2N3997 JANHCA2N3998 JANKCB2N3996 JANHCB2N3997

sd 431 transistor

Abstract: 2N3904 TYPICAL APPLICATION 3.3V C1 VIN 7 VIN 5 VOUT 4 Adj 3 SD 2 VSENSE IRU1176 6 VCTRL 1 2.7V R1 C3 R2 5V C2 SD Q1 Enable Figure 1 - Typical , Tab is V OUT 6 5 4 3 2 1 V IN V IN V CTRL V OUT Adj SD V SENSE 7 6 5 4 3 2 Tab is V OUT 1 JA=35°C/W for 0.5" square pad V IN V IN V CTRL V OUT Adj SD V SENSE , Minimum Load Current (Note 3) Thermal Regulation Ripple Rejection SD Threshold Voltage SD Input
International Rectifier
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IRU1176CM IRU1176CP 2N3904 I740 computer mother board transistor ST 2N3904 PD94132

sd 431 transistor

Abstract: N ANER PHILIPS/DISCRETE bRE D â  bb53T31 0D3DSSS 431 « A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic full-pack envelope, he device is intended for use in Switched Mode , ]3 003055b Philips Semiconductors 37fl â  Product Specmcation PowerMOS transistor , = 0 V; VB = 30 V S _ 90 0.70 io R M V sd tr, Q rr April 1993 Reverse recovery
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53T31 PINNING-SOT186 BUK445-100A/B BUK445

sd 431 transistor

Abstract: h a 431 transistor all output transistor current. If output transistor current is over the specified limiting current , T O S H IB A CO RPORATIO N - 431 - TA8428K -P d - Ta 1000 , VSD (V) V SD - Tc 301 - - - - 25 20 15 I -40 - -
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h a 431 transistor
Abstract: all output transistor current. If output transistor current is over the specified limiting , . TOSHIBA CORPORATION â'" 430 - ON TA8428K INTERNAL CIRCUIT TOSHIBA CORPORATION â'" 431 , OPERATING VOLTAGE AMBIENT TEMPERATURE 30 Ta (°C) ISC " Tc 'SD - Tc cd Ã" D C J O -
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sd 431 transistor

Abstract: electrolytic capacitor 16V Transistor SD L VOUT CB EXT VDD CE VOUT CL Tantalum Tr VIN RB RL CIN GND 4 Circuit 8.XC6367B, XC6368BNPN Transistor SD VOUT L CB EXT CE RFB1 VDD CFB FB Tr RB VIN CL Tantalum RL CIN GND RFB2 Circuit 9.XC6367C, XC6368CNPN Transistor SD , 421 XC6367/6368 Series Circuit 10.XC6367D, XC6368DNPN Transistor SD VOUT CB L VDD CFB , 4 Circuit 11.XC6367E, XC6368ENPN Transistor SD L VOUT CB EXT VOUT Tr VIN CL
Torex Semiconductor
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XC6368 XC6368A333MR electrolytic capacitor 16V MA737 XC6368B101MR RB5-10 CR54 NSOT-25 XC6367/68 100A100 A100A

2N6969

Abstract: 2N6966 SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON TYPES 2N6966, 2N6967, 2N6968, and 2N6969 JANTX , condition A: Add ";", after see (4.3.1): Add "condition C shall precede condition A". 4.3.1, second line , be derived SD H H 5>D by each vendor from the thermal response curves (see figure 2). The chosen , column: Delete "see 4.3.1". TABLE Ila, subgroup 4, intermittent operation life, method column: Delete
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2N6966 JANTX 2N6969 JANTX 2N6968 JANTX MIL-S-19500/569 IL-S-19500/569 MIL-STD-750 HIL-S-19500/569

sd 431 transistor

Abstract: transistor buz 210 SIEMENS SIPMOS ® Power Transistor · N channel · Enhancement mode · Avalanche-rated · Logic Level BUZ 71 AL N o t fo r n e w rip a ig n Type BUZ 71 AL Vbs 50 V 13 A flbs(on) 0.12 ß , i 70 Semiconductor Group 431 07.96 SIEMENS Electrical Characteristics, at 7] 25 , , /F=/Si d/p/df = 100 A/ps Qt irr ^SD 1.3 ^SM BUZ 71 AL Not for new design Values typ. max , Forward characteristics of reverse diode /F = / ( V sd) parameter: 7j, = 80 ps Semiconductor
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transistor buz 210 C67078-S1326-A3 GD-05155

NDS8435

Abstract:  Natio nal Semiconductor" May 1996 NDS8435 Single P-Channel Enhancement Mode Field Effect Transistor General Description These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is , SD Drain-Source Diode Forward Voltage -0.8 -1.2 V Notes: 1. RajA ¡s the sum of the , Temperature Figure 5. Transfer Characteristics Figure 6. Gate Threshold Variation with Temperature _4-31
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S01130 50113D

mosfet 6r045

Abstract: infineon 6r045 IPW60R045CP CoolMOSTM Power Transistor Features · Worldwide best R ds,on in TO247 · Ultra low , =25 °C T C=25 °C I D=11 A, V DD=50 V I D=11 A, V DD=50 V Value 60 38 230 1950 3 11 50 ±20 ±30 431 -55 . , Reverse recovery time Reverse recovery charge Peak reverse recovery current V SD t rr Q rr I rrm V R=400 V , I F=f(V SD) parameter: T j 103 8 120 V 400 V 102 150 °C 25 °C 150 °C, 98% 6 , ] V SD [V] 11 Avalanche energy E AS=f(T j); I D=11 A; V DD=50 V 12 Drain-source breakdown
Infineon Technologies
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mosfet 6r045 infineon 6r045 6R045 marking transistor 6R045 PG-TO-247-3 gs 431 transistor PG-TO247-3-1 SP000067149 6R045

IPW60R045Cp 6R045

Abstract: mosfet 6r045 IPW60R045CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tjmax · , ±30 T C=25 °C 431 W -55 . 150 °C T j, T stg Mounting torque Rev. 2.0 M3 and , DD=400 V, I D=44 A, V GS=0 to 10 V nC Reverse Diode Diode forward voltage V SD Reverse , (V SD) parameter: V DD parameter: T j 103 10 120 V 8 102 400 V I F [A] V , 100 0 150 0.5 1 Q gate [nC] 1.5 2 V SD [V] 11 Avalanche energy 12
Infineon Technologies
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IPW60R045Cp 6R045 JESD22

infineon 6r045

Abstract: mosfet 6r045 IPW60R045CS CoolMOS TM Power Transistor Product Summary Features V DS · , V AC (f >1 Hz) Power dissipation 11 ±30 T C=25 °C 431 W -55 . 150 °C T , =0 to 10 V nC Reverse Diode Diode forward voltage V SD Reverse recovery time V GS=0 V, I , Forward characteristics of reverse diode V GS=f(Q gate); I D=44 A pulsed I F=f(V SD) parameter: V , 0.5 1 Q gate [nC] 1.5 2 V SD [V] 11 Avalanche energy 12 Drain-source breakdown
Infineon Technologies
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PG-TO247-3 Q67045A5061 6r045 infineon IPW60R045

IPW50R045CP

Abstract: JESD22 IPW50R045CP CoolMOSTM Power Transistor Product Summary Features V DS @Tjmax · Lowest , ±20 V AC (f>1 Hz) ±30 T C=25 °C 431 W -55 . 150 °C Power dissipation P , Diode forward voltage V SD Reverse recovery time V GS=0 V, I F=44 A, T j=25 °C t rr , charge 10 Forward characteristics of reverse diode V GS=f(Q gate); I D=44 A pulsed I F=f(V SD , 75 100 125 150 0 0.5 1 Q gate [nC] 1.5 2 V SD [V] 11 Avalanche
Infineon Technologies
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PG-TO247 IPP50R045CP 5R045P

mosfet 6r045

Abstract: IPW60R045Cp 6R045 IPW60R045CP CoolMOS® Power Transistor Product Summary Features V DS @ Tjmax · , ±30 T C=25 °C 431 W -55 . 150 °C T j, T stg Mounting torque Rev. 2.2 M3 and , DD=400 V, I D=44 A, V GS=0 to 10 V nC Reverse Diode Diode forward voltage V SD Reverse , (V SD) parameter: V DD parameter: T j 103 10 120 V 8 102 400 V I F [A] V , 100 0 150 0.5 1 Q gate [nC] 1.5 2 V SD [V] 11 Avalanche energy 12
Infineon Technologies
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CoolMOS Power Transistor D44 MARKING 230 AC to 5V dc smps DD-50

sd 431 transistor

Abstract: S IE M E N S SIPMOS® Small-Signal Transistor BSS 91 VD S = 240 V /D = 0.35 A ^DS(on) = 6-0 A · · · N channel Enhancem ent mode Package: T O -1 8 ') Type Ordering code for version in bulk Q 62702 -S 45 7 BSS 91 Maximum Ratings Parameter D rain-so urce voltage D rain-gate voltage , c = 25 °C Diode forw ard on-voltage / F = 0.7 A, VBB = 0 is ¡su ^ sd typ. max. Unit _ _ _ _ _ , 80 us, VDS = 25 V 10u 5 10' 5 10' 5 V 10 Siem ens Aktiengesellschaft 431
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infineon 6r045

Abstract: mosfet 6r045 IPW60R045CP CoolMOSTM Power Transistor Features · Worldwide best R ds,on in TO247 · Ultra low , =25 °C T C=25 °C I D=11 A, V DD=50 V I D=11 A, V DD=50 V Value 60 38 230 1950 3 11 50 ±20 ±30 431 -55 . , Reverse recovery time Reverse recovery charge Peak reverse recovery current V SD t rr Q rr I rrm V R=400 V , I F=f(V SD) parameter: T j 103 8 120 V 400 V 102 150 °C 25 °C 150 °C, 98% 6 , ] V SD [V] 11 Avalanche energy E AS=f(T j); I D=11 A; V DD=50 V 12 Drain-source breakdown
Infineon Technologies
Original

IPW60R045Cp 6R045

Abstract: 6r045 IPW60R045CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tjmax · , ±30 T C=25 °C 431 W -55 . 150 °C T j, T stg Mounting torque Rev. 2.0 M3 and , DD=400 V, I D=44 A, V GS=0 to 10 V nC Reverse Diode Diode forward voltage V SD Reverse , (V SD) parameter: V DD parameter: T j 103 10 120 V 8 102 400 V I F [A] V , 100 0 150 0.5 1 Q gate [nC] 1.5 2 V SD [V] 11 Avalanche energy 12
Infineon Technologies
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