500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

sd+431+transistor

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: ÃMm^m140 Commerce Drive I VlicruserIff Montgomeryville, PA 18936-1013 Progress Powered by Technology iviwi iivjwi I iv«i jr v ilj « #-» â  u^t/u i v i vr ^ _ ^ ^ Tel: (215) 631-9840 SD 1422 RF & MICROWAVE TRANSISTORS 450 - 512MHz CLASS C, MOBILE APPLICATIONS â  CLASS C TRANSISTOR â , 12.5Vepitaxial silicon NPN planar transistor designed for broadband applications in the 450-512MHz land mobile , 431 SD1422 PACKAGE MECHANICAL DATA .500 6LPL Minimum Inches/mm Maximum inches/mm A .150/3.43 -
OCR Scan
VK200 sd 431 transistor transistor c5 178 x1 transistor 2 SD 427 transistor M111 UNELCO 512MH 470MH 450-512MH S88SD-12207 25VCD
Abstract: -19500/374C 01 May 1995 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON , for transistor types 2N3996 and 2N3997. 2 MIL-PRF-19500/374D Dimensions Symbol Inches , equivalent to x symbology. FIGURE 1. Physical dimensions for transistor types 2N3996 and 2N3997 - Continued. 3 MIL-PRF-19500/374D FIGURE 2. Physical dimensions for transistor types 2N3998 and , equivalent to x symbology. FIGURE 2. Physical dimensions for transistor types 2N3998 and 2N3999 - Continued API Electronics
Original
diode cc 3053 cc 3053 2n3996 equivalent transistor tms 374c 33178 c2688 MIL-S-19500/374C MIL-PRF-19500
Abstract: -19500/315E 10 March 1992 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON , FIGURE 1. Physical dimensions of transistor type 2N2880 (TO-59). 3 MIL-PRF-19500/315F Dimension , hexagonal is optional. FIGURE 1. Physical dimensions of transistor type 2N2880 (TO-59)- Continued. 4 MIL-PRF-19500/315F FIGURE 2. Physical dimensions of transistor type 2N3749 (TO-59). 5 MIL-PRF , standards for Federal Service Handbook H28, part I. FIGURE 2. Physical dimensions of transistor type 2N3749 -
Original
01903 JANTXV 2N2880 equivalent MIL-PRF19500 sd 1074 transistor Stancor MIL-S-19500/315E
Abstract: -19500/374D 29 June 1999 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON , dimensions for transistor types 2N3996 and 2N3997. 3 MIL-PRF-19500/374E Symbol CH A1 CD CD1 HF , Y14.5M, diameters are equivalent to x symbology. * FIGURE 1. Physical dimensions for transistor , transistor types 2N3998 and 2N3999. 5 MIL-PRF-19500/374E Symbol CH A1 CD1 CD HF PS PS1 , equivalent to x symbology. * FIGURE 2. Physical dimensions for transistor types 2N3998 and 2N3999 - -
Original
transistor sl 431 UNF-2A 2N3997 JAN to-111 C-2688 JANHCB2N3996 JANHCA2N3996 JANHCA2N3997 JANHCA2N3998 JANKCB2N3996 JANHCB2N3997
Abstract: control circuitry as well as the base drive for the pass transistor. This pin must always be higher than , low cost 2N3904 general purpose transistor as shown in the application circuit. The current sink of , U V MIN MAX 10.05 10.31 8.28 8.53 4.31 4.57 0.66 0.91 1.14 1.40 1.27 REF 14.73 15.75 International Rectifier
Original
IRU1176 IRU1176CM IRU1176CP computer mother board I740 transistor ST 2N3904 PD94132
Abstract: N ANER PHILIPS/DISCRETE bRE D â  bb53T31 0D3DSSS 431 « A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic full-pack envelope, he device is intended for use in Switched Mode , ]3 003055b Philips Semiconductors 37fl â  Product Specmcation PowerMOS transistor , â  Product Specification PowerMOS transistor BUK445-1OOA/B g fs /S / 0 20 40 -
OCR Scan
53T31 PINNING-SOT186 BUK445-100A/B BUK445
Abstract: all output transistor current. If output transistor current is over the specified limiting current , T O S H IB A CO RPORATIO N - 431 - TA8428K -P d - Ta 1000 -
OCR Scan
h a 431 transistor
Abstract: all output transistor current. If output transistor current is over the specified limiting , . TOSHIBA CORPORATION â'" 430 - ON TA8428K INTERNAL CIRCUIT TOSHIBA CORPORATION â'" 431 -
OCR Scan
Abstract: 45984-4123 45984-4133 45984-4143 45984-4153 45984-4163 45984-4173 45984-4183 DIM A REF 35.5 38.0 40.6 43.1 45.6 48.2 50.7 53.3 35.5 38.0 40.6 43.1 45.6 48.2 50.7 53.3 35.5 38.0 40.6 43.1 45.6 48.2 50.7 53.3 , S O P T IO N A L S E E C H A R T - - r f 4.31 -P + 0.25 - 3.60 2.36 0 1 . 0 , 45984-4253 45984-4263 45984-4273 45984-4283 DIM A DIM P PCB TH K 35.5 38.0 40.6 43.1 45.6 48.2 50.7 53.3 35.5 38.0 40.6 43.1 45.6 48.2 50.7 53.3 35.5 38.0 40.6 43.1 45.6 48.2 50.7 53.3 2.90 1.57 -
OCR Scan
PS-45984-001 UM/50 PK-45984-001 38TYP 05TYP 89TYP
Abstract: ALPHA 431 4.3â' LCD Computer Module PRODUCT INFORMATION ALPHA 431 - For the Engineers RS232 , Thin Aluminium Front Panel ALPHA 431 - The Headlines TFT LCD R MH MH RISC P E MB , ALPHA 431 - In a few words Designed and manufactured at Blue Chip Technologyâ'™s facility in the heart of the UK the Alpha 431 is a reliable compact C A T T I A M W CE L A ALPHA 431 4.3â' LCD Computer Module PRODUCT INFORMATION C Processors & Memory -DSP 10/100 Mbit Blue Chip Technology
Original
PC104
Abstract: A REF 35.5 38.0 40.6 43.1 45.6 48.2 50.7 53.3 35.5 38.0 40.6 43.1 45.6 48.2 50.7 53.3 35.5 38.0 40.6 43.1 45.6 48.2 50.7 53.3 DIM P PCB TH K ?!?!?!?! 15.7 9 4 V - 0 , C O LO R - B LA C K . CO , 12 16 35.5 38.0 40.ó 43.1 45.( 48.: 50.7 53.3 35.5 38.0 40.6 43.1 45.6 48.2 50.7 53.3 35.5 38.0 40.6 43.1 45.6 48.2 50.7 53.3 '.90 1.57 3.60 2.36 4.50 20 24 32 36 40 45984- 4261 45 984-4271 , DIM P PCB TH K 35.5 38.0 40.6 43.1 45.6 48.2 50.7 53.3 35.5 38.0 40.6 43.1 45.6 48.2 50.7 53.3 -
OCR Scan
45984-4343 SD-45984-400
Abstract: output currents are possible using an externally connected transistor, coil, diode and condenser , 3 1 2 3 VOUT VDD CE CE VOUT N.C. 5 EXT External transistor , 2SD1628 transistor, IOUT=1.0mA - - 0.9 V Oscillation Start-up Voltage 2 VST2 VOUT=CE : Apply voltage - - 0.8 V Oscillation Hold Voltage VHLD Use of a 2SX1628 transistor , 2SD1628 transistor, IOUT=1.0mA - - 0.9 V Oscillation Start-up Voltage 2 VST2 VOUT=CE Torex Semiconductor
Original
XC6368 XC6368A333MR electrolytic capacitor 16V MA737 XC6368B101MR CR54 RB5-10 NSOT-25 XC6367/68 100A100 A100A
Abstract: DIM P REF 35.5 38.0 40.6 43.1 45.6 48.2 50.7 53.3 35.5 38.0 40.6 43.1 45.6 48.2 50.7 53.3 35.5 38.0 40.6 43.1 45.6 48.2 50.7 53.3 2.90 3.60 4.50 PCB THK 15.' BO TH O V E R N IC K E L - 1.27 MM , 38.0 40.6 43.1 45.6 48.2 50.7 53.3 35.5 38.0 40.6 43.1 45.6 48.2 50.7 53.3 35.5 38.0 40.6 43.1 45.6 , 45984-4353 45984-4363 45984-4373 45984-4383 DIM A DIM 0 DIM P ROB TPK 35.5 38.0 40.6 43.1 45.6 48.2 50.7 53.3 35.5 38.0 40.6 43.1 45.6 48.2 50.7 53.3 35.5 38.0 40.6 43.1 45.6 48.2 50.7 53.3 37.90 -
OCR Scan
sd 431 45984-4441 MM/30 MM/150 MM/50
Abstract: SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON TYPES 2N6966, 2N6967, 2N6968, and 2N6969 JANTX , condition A: Add ";", after see (4.3.1): Add "condition C shall precede condition A". 4.3.1, second line , column: Delete "see 4.3.1". TABLE Ila, subgroup 4, intermittent operation life, method column: Delete -
OCR Scan
2N6966 JANTX 2N6969 JANTX 2N6968 JANTX MIL-S-19500/569 IL-S-19500/569 MIL-STD-750 HIL-S-19500/569
Abstract: 380021286 04 35 ? 11 431 28,58 11 125] 380021288 05 45 7 11 801 38,10 11 500] 387230506 06 55 2 12 , ] 387235511 11 102,9 14 051 95.25 13 750] 387235512 12 112,4 14 431 104.78 14 125] 387236513 13 121 , 387235520 20 188 B 17 431 1B0.9B 17 125] 21 198 1 17 BOI 190,50 17 500] 387236522 22 207 5 18 181 , ] 2B 2G4 B no 431 257,IB 110 1251 29 274 3 no 801 266,70 110 5001 387236630 387236530 30 283 8 , ,85 112 7501 3B 341 0 113 431 333,3B 113 1251 37 350 5 m 801 342,90 113 5001 38 360 0 -
OCR Scan
4095B 38002-1284 6251 34 HB431 SD-38002-002 3B723B502 38DD212B9 3B723660B 3B723B510 3B7236615
Abstract: CST-432R-21 A 10.1 (0.40I C CST-431D-21 CST-431H-21 CST-431 A-1 1 CST-432D-21 CST-432H-21 CST -431R-21 C S T -432A -1 1 N 16 CST-431 E-1 1 CST-431 Y - 1 1 CST-431 G - 1 1 CST-432E-1 1 CST-432Y -11 CST -
OCR Scan
CSD-424H CSS-41 CSD-424DC-21 CSD-424HC-21 5R-21 5D-21
Abstract: SIEMENS SIPMOS ® Power Transistor · N channel · Enhancement mode · Avalanche-rated · Logic Level BUZ 71 AL N o t fo r n e w rip a ig n Type BUZ 71 AL Vbs 50 V 13 A flbs(on) 0.12 ß Package TO-220 AB Ordering Code C67078-S1326-A3 Maximum Ratings Parameter Continuous drain current Tc = 25 °C Pulsed drain current Tc = 25 °C Avalanche current,limited by 7}max Avalanche energy , i 70 Semiconductor Group 431 07.96 SIEMENS Electrical Characteristics, at 7] 25 -
OCR Scan
transistor buz 210 GD-05155
Abstract:  Natio nal Semiconductor" May 1996 NDS8435 Single P-Channel Enhancement Mode Field Effect Transistor General Description These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices , Temperature Figure 5. Transfer Characteristics Figure 6. Gate Threshold Variation with Temperature _4-31 -
OCR Scan
S01130 50113D
Abstract: IPW60R045CP CoolMOSTM Power Transistor Features · Worldwide best R ds,on in TO247 · Ultra low gate charge · Extreme dv/dt rated · High peak current capability · Qualified according to JEDEC1) for target applications · Pb-free lead plating; RoHS compliant Product Summary V DS @ Tjmax R DS(on),max Q g,typ 650 0.045 150 V nC PG-TO247-3-1 CS CoolMOS is specially designed for: · Hard switching , =25 °C T C=25 °C I D=11 A, V DD=50 V I D=11 A, V DD=50 V Value 60 38 230 1950 3 11 50 ±20 ±30 431 -55 . Infineon Technologies
Original
mosfet 6r045 infineon 6r045 6R045 marking transistor 6R045 230 AC to 5V dc smps gs 431 transistor SP000067149 6R045
Abstract: IPW60R045CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tjmax · Worldwide best R ds,on in TO247 650 0.045 Q g,typ 150 R DS(on),max · Ultra low gate charge V nC · Extreme dv/dt rated · High peak current capability · Qualified according to JEDEC1) for target applications · Pb-free lead plating; RoHS compliant PG-TO247-3-1 CoolMOS CP is , ±30 T C=25 °C 431 W -55 . 150 °C T j, T stg Mounting torque Rev. 2.0 M3 and Infineon Technologies
Original
IPW60R045Cp 6R045 JESD22
Showing first 20 results.