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TMX320C6202GLS225 Texas Instruments Fixed-Point Digital Signal Processor 384-FCBGA 0 to 0
TMS320LBC52PZA57 Texas Instruments Digital Signal Processors 100-LQFP
TMX320C6211GFN150 Texas Instruments Fixed-Point Digital Signal Processor 256-BGA
TMS320VC33PGE60 Texas Instruments Digital Signal Processor 144-LQFP
TMS320VC5509AGHHAU Texas Instruments Fixed-Point Digital Signal Processor 179-BGA MICROSTAR
SI3016-KSR Texas Instruments 16-BIT, 14.7456MHz, OTHER DSP, PDSO16, PLASTIC, SOIC-16

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Part : DW-14-09-S-D-431 Supplier : Samtec Manufacturer : Avnet Stock : - Best Price : $2.6582 Price Each : $3.8537
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Part : SD43-183MLC Supplier : Coilcraft Manufacturer : Coilcraft Direct Stock : 1,438 Best Price : $0.26 Price Each : $0.92
Part : MCSD43-100MU Supplier : SPC Multicomp Manufacturer : element14 Asia-Pacific Stock : 2,380 Best Price : $0.19 Price Each : $0.3110
Part : MCSD43-100MU Supplier : SPC Multicomp Manufacturer : element14 Asia-Pacific Stock : 2,380 Best Price : $0.19 Price Each : $0.3110
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Part : MCSD43-180MU Supplier : SPC Multicomp Manufacturer : element14 Asia-Pacific Stock : 239 Best Price : $0.13 Price Each : $0.2170
Part : MCSD43-1R0MU Supplier : SPC Multicomp Manufacturer : element14 Asia-Pacific Stock : 2,711 Best Price : $0.12 Price Each : $0.29
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Part : SD43-123MLB Supplier : Coilcraft Manufacturer : element14 Asia-Pacific Stock : 25 Best Price : $0.81 Price Each : $1.32
Part : SD43-142MLB Supplier : Coilcraft Manufacturer : element14 Asia-Pacific Stock : 13 Best Price : $0.81 Price Each : $1.32
Part : SD43-153MLB Supplier : Coilcraft Manufacturer : element14 Asia-Pacific Stock : 21 Best Price : $0.81 Price Each : $1.32
Part : SD43-182MLB Supplier : Coilcraft Manufacturer : element14 Asia-Pacific Stock : 511 Best Price : $0.81 Price Each : $1.32
Part : SD43-183MLB Supplier : Coilcraft Manufacturer : element14 Asia-Pacific Stock : 25 Best Price : $0.81 Price Each : $1.32
Part : MCSD43-100MU Supplier : SPC Multicomp Manufacturer : Farnell element14 Stock : 1,920 Best Price : £0.3890 Price Each : £0.7270
Part : MCSD43-120MU Supplier : SPC Multicomp Manufacturer : Farnell element14 Stock : 786 Best Price : £0.3890 Price Each : £0.7270
Part : MCSD43-150MU Supplier : SPC Multicomp Manufacturer : Farnell element14 Stock : 585 Best Price : £0.1640 Price Each : £0.6990
Part : MCSD43-180MU Supplier : SPC Multicomp Manufacturer : Farnell element14 Stock : 241 Best Price : £0.1710 Price Each : £0.7270
Part : MCSD43-1R0MU Supplier : SPC Multicomp Manufacturer : Farnell element14 Stock : 1,216 Best Price : £0.3040 Price Each : £0.4760
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Part : SD43-102MLB Supplier : Coilcraft Manufacturer : Farnell element14 Stock : 497 Best Price : £0.3560 Price Each : £0.78
Part : SD43-103MLB Supplier : Coilcraft Manufacturer : Farnell element14 Stock : 498 Best Price : £0.3560 Price Each : £0.78
Part : SD43-123MLB Supplier : Coilcraft Manufacturer : Farnell element14 Stock : 25 Best Price : £0.3560 Price Each : £0.78
Part : SD43-142MLB Supplier : Coilcraft Manufacturer : Farnell element14 Stock : 13 Best Price : £0.3560 Price Each : £0.78
Part : SD43-153MLB Supplier : Coilcraft Manufacturer : Farnell element14 Stock : 21 Best Price : £0.3560 Price Each : £0.78
Part : SD43-182MLB Supplier : Coilcraft Manufacturer : Farnell element14 Stock : 521 Best Price : £0.3560 Price Each : £0.78
Part : SD43-183MLB Supplier : Coilcraft Manufacturer : Farnell element14 Stock : 25 Best Price : £0.3560 Price Each : £0.78
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sd 431 transistor

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: Technology iviwi iivjwi I iv«i jr v ilj « #-» â  u^t/u i v i vr ^ _ ^ ^ Tel: (215) 631-9840 SD 1422 RF & MICROWAVE TRANSISTORS 450 - 512MHz CLASS C, MOBILE APPLICATIONS â  CLASS C TRANSISTOR â , METALLIZATION .500 6LFL (M111) epoxy sealed ORDER CODE BRANDING SD1422 SD1422 DESCRIPTION The SD 1422 is a 12.5Vepitaxial silicon NPN planar transistor designed for broadband applications in the 450-512MHz land mobile , 431 SD1422 PACKAGE MECHANICAL DATA .500 6LPL Minimum Inches/mm Maximum inches/mm A .150/3.43 -
OCR Scan
VK200 transistor c5 178 x1 transistor 2 SD 427 transistor M111 UNELCO 512MH 470MH 450-512MH S88SD-12207 25VCD
Abstract: -19500/374C 01 May 1995 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON , for transistor types 2N3996 and 2N3997. 2 MIL-PRF-19500/374D Dimensions Symbol Inches , 1.02 .040 .065 1.02 1.65 5 7 1.65 T1 3 SD .190-32 UNF-2A 4 8 Z , dimension does not include sealing flanges. 7. SU is the length of incomplete or undercut threads. 8. SD , equivalent to x symbology. FIGURE 1. Physical dimensions for transistor types 2N3996 and 2N3997 - API Electronics
Original
2N3999 2N3998 diode cc 3053 cc 3053 2n3996 equivalent transistor tms 374c 33178 c2688 MIL-S-19500/374C MIL-PRF-19500
Abstract: -19500/315E 10 March 1992 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON , FIGURE 1. Physical dimensions of transistor type 2N2880 (TO-59). 3 MIL-PRF-19500/315F Dimension , T1 0.040 0.070 1.02 1.78 SD 0.190-32UNF-2A 4 10 4 PS1 0.090 0.110 , used. 4. SD is the outer diameter of coated threads. Reference: Screw thread standards for Federal , hexagonal is optional. FIGURE 1. Physical dimensions of transistor type 2N2880 (TO-59)- Continued. 4 -
Original
01903 JANTXV 2N2880 equivalent 2n3749 MIL-PRF19500 sd 1074 transistor Stancor MIL-S-19500/315E 2N3749
Abstract: -19500/374D 29 June 1999 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON , dimensions for transistor types 2N3996 and 2N3997. 3 MIL-PRF-19500/374E Symbol CH A1 CD CD1 HF PS PS1 HT OAH UD SL SU T T1 SD Z Z1 * * Dimensions Inches Millimeters Min Max , flanges. 7. SU is the length of incomplete or undercut threads. 8. SD is the pitch diameter of coated , Y14.5M, diameters are equivalent to x symbology. * FIGURE 1. Physical dimensions for transistor -
Original
transistor sl 431 UNF-2A 2N3997 JAN to-111 C-2688 JANHCB2N3996 JANHCA2N3996 JANHCA2N3997 JANHCA2N3998 JANKCB2N3996 JANHCB2N3997
Abstract: TYPICAL APPLICATION 3.3V C1 VIN 7 VIN 5 VOUT 4 Adj 3 SD 2 VSENSE IRU1176 6 VCTRL 1 2.7V R1 C3 R2 5V C2 SD Q1 Enable Figure 1 - Typical , Tab is V OUT 6 5 4 3 2 1 V IN V IN V CTRL V OUT Adj SD V SENSE 7 6 5 4 3 2 Tab is V OUT 1 JA=35°C/W for 0.5" square pad V IN V IN V CTRL V OUT Adj SD V SENSE , Minimum Load Current (Note 3) Thermal Regulation Ripple Rejection SD Threshold Voltage SD Input International Rectifier
Original
IRU1176CM IRU1176CP 2N3904 computer mother board I740 transistor ST 2N3904 PD94132
Abstract: N ANER PHILIPS/DISCRETE bRE D â  bb53T31 0D3DSSS 431 « A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic full-pack envelope, he device is intended for use in Switched Mode , ]3 003055b Philips Semiconductors 37fl â  Product Specmcation PowerMOS transistor , = 0 V; VB = 30 V S _ 90 0.70 io R M V sd tr, Q rr April 1993 Reverse recovery -
OCR Scan
53T31 PINNING-SOT186 BUK445-100A/B BUK445
Abstract: all output transistor current. If output transistor current is over the specified limiting current , T O S H IB A CO RPORATIO N - 431 - TA8428K -P d - Ta 1000 , VSD (V) V SD - Tc 301 - - - - 25 20 15 I -40 - - -
OCR Scan
h a 431 transistor
Abstract: all output transistor current. If output transistor current is over the specified limiting , . TOSHIBA CORPORATION â'" 430 - ON TA8428K INTERNAL CIRCUIT TOSHIBA CORPORATION â'" 431 , OPERATING VOLTAGE AMBIENT TEMPERATURE 30 Ta (°C) ISC " Tc 'SD - Tc cd Ã" D C J O -
OCR Scan
Abstract: Transistor SD L VOUT CB EXT VDD CE VOUT CL Tantalum Tr VIN RB RL CIN GND 4 Circuit 8.XC6367B, XC6368BNPN Transistor SD VOUT L CB EXT CE RFB1 VDD CFB FB Tr RB VIN CL Tantalum RL CIN GND RFB2 Circuit 9.XC6367C, XC6368CNPN Transistor SD , 421 XC6367/6368 Series Circuit 10.XC6367D, XC6368DNPN Transistor SD VOUT CB L VDD CFB , 4 Circuit 11.XC6367E, XC6368ENPN Transistor SD L VOUT CB EXT VOUT Tr VIN CL Torex Semiconductor
Original
XC6368 XC6368A333MR electrolytic capacitor 16V MA737 XC6368B101MR CR54 RB5-10 NSOT-25 XC6367/68 100A100 A100A
Abstract: SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON TYPES 2N6966, 2N6967, 2N6968, and 2N6969 JANTX , condition A: Add ";", after see (4.3.1): Add "condition C shall precede condition A". 4.3.1, second line , be derived SD H H 5>D by each vendor from the thermal response curves (see figure 2). The chosen , column: Delete "see 4.3.1". TABLE Ila, subgroup 4, intermittent operation life, method column: Delete -
OCR Scan
2N6966 JANTX 2N6969 JANTX 2N6968 JANTX MIL-S-19500/569 IL-S-19500/569 MIL-STD-750 HIL-S-19500/569
Abstract: SIEMENS SIPMOS ® Power Transistor · N channel · Enhancement mode · Avalanche-rated · Logic Level BUZ 71 AL N o t fo r n e w rip a ig n Type BUZ 71 AL Vbs 50 V 13 A flbs(on) 0.12 ß , i 70 Semiconductor Group 431 07.96 SIEMENS Electrical Characteristics, at 7] 25 , , /F=/Si d/p/df = 100 A/ps Qt irr ^SD 1.3 ^SM BUZ 71 AL Not for new design Values typ. max , Forward characteristics of reverse diode /F = / ( V sd) parameter: 7j, = 80 ps Semiconductor -
OCR Scan
transistor buz 210 C67078-S1326-A3 GD-05155
Abstract:  Natio nal Semiconductor" May 1996 NDS8435 Single P-Channel Enhancement Mode Field Effect Transistor General Description These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is , SD Drain-Source Diode Forward Voltage -0.8 -1.2 V Notes: 1. RajA ¡s the sum of the , Temperature Figure 5. Transfer Characteristics Figure 6. Gate Threshold Variation with Temperature _4-31 -
OCR Scan
S01130 50113D
Abstract: IPW60R045CP CoolMOSTM Power Transistor Features · Worldwide best R ds,on in TO247 · Ultra low , =25 °C T C=25 °C I D=11 A, V DD=50 V I D=11 A, V DD=50 V Value 60 38 230 1950 3 11 50 ±20 ±30 431 -55 . , Reverse recovery time Reverse recovery charge Peak reverse recovery current V SD t rr Q rr I rrm V R=400 V , I F=f(V SD) parameter: T j 103 8 120 V 400 V 102 150 °C 25 °C 150 °C, 98% 6 , ] V SD [V] 11 Avalanche energy E AS=f(T j); I D=11 A; V DD=50 V 12 Drain-source breakdown Infineon Technologies
Original
mosfet 6r045 infineon 6r045 6R045 marking transistor 6R045 230 AC to 5V dc smps gs 431 transistor PG-TO247-3-1 SP000067149 6R045
Abstract: IPW60R045CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tjmax · , ±30 T C=25 °C 431 W -55 . 150 °C T j, T stg Mounting torque Rev. 2.0 M3 and , DD=400 V, I D=44 A, V GS=0 to 10 V nC Reverse Diode Diode forward voltage V SD Reverse , (V SD) parameter: V DD parameter: T j 103 10 120 V 8 102 400 V I F [A] V , 100 0 150 0.5 1 Q gate [nC] 1.5 2 V SD [V] 11 Avalanche energy 12 Infineon Technologies
Original
IPW60R045Cp 6R045 JESD22
Abstract: IPW60R045CS CoolMOS TM Power Transistor Product Summary Features V DS · , V AC (f >1 Hz) Power dissipation 11 ±30 T C=25 °C 431 W -55 . 150 °C T , =0 to 10 V nC Reverse Diode Diode forward voltage V SD Reverse recovery time V GS=0 V, I , Forward characteristics of reverse diode V GS=f(Q gate); I D=44 A pulsed I F=f(V SD) parameter: V , 0.5 1 Q gate [nC] 1.5 2 V SD [V] 11 Avalanche energy 12 Drain-source breakdown Infineon Technologies
Original
PG-TO247-3 Q67045A5061 6r045 infineon PG-TO-247-3 IPW60R045
Abstract: IPW60R045CP CoolMOS® Power Transistor Product Summary Features V DS @ Tjmax · , ±30 T C=25 °C 431 W -55 . 150 °C T j, T stg Mounting torque Rev. 2.2 M3 and , DD=400 V, I D=44 A, V GS=0 to 10 V nC Reverse Diode Diode forward voltage V SD Reverse , (V SD) parameter: V DD parameter: T j 103 10 120 V 8 102 400 V I F [A] V , 100 0 150 0.5 1 Q gate [nC] 1.5 2 V SD [V] 11 Avalanche energy 12 Infineon Technologies
Original
D44 MARKING CoolMOS Power Transistor DD-50
Abstract: IPW50R045CP CoolMOSTM Power Transistor Product Summary Features V DS @Tjmax · Lowest , ±20 V AC (f>1 Hz) ±30 T C=25 °C 431 W -55 . 150 °C Power dissipation P , Diode forward voltage V SD Reverse recovery time V GS=0 V, I F=44 A, T j=25 °C t rr , charge 10 Forward characteristics of reverse diode V GS=f(Q gate); I D=44 A pulsed I F=f(V SD , 75 100 125 150 0 0.5 1 Q gate [nC] 1.5 2 V SD [V] 11 Avalanche Infineon Technologies
Original
PG-TO247 IPP50R045CP 5R045P
Abstract: S IE M E N S SIPMOS® Small-Signal Transistor BSS 91 VD S = 240 V /D = 0.35 A ^DS(on) = 6-0 A · · · N channel Enhancem ent mode Package: T O -1 8 ') Type Ordering code for version in bulk Q 62702 -S 45 7 BSS 91 Maximum Ratings Parameter D rain-so urce voltage D rain-gate voltage , c = 25 °C Diode forw ard on-voltage / F = 0.7 A, VBB = 0 is ¡su ^ sd typ. max. Unit _ _ _ _ _ , 80 us, VDS = 25 V 10u 5 10' 5 10' 5 V 10 Siem ens Aktiengesellschaft 431 -
OCR Scan
Abstract: IPW60R045CP CoolMOSTM Power Transistor Features · Worldwide best R ds,on in TO247 · Ultra low , =25 °C T C=25 °C I D=11 A, V DD=50 V I D=11 A, V DD=50 V Value 60 38 230 1950 3 11 50 ±20 ±30 431 -55 . , Reverse recovery time Reverse recovery charge Peak reverse recovery current V SD t rr Q rr I rrm V R=400 V , I F=f(V SD) parameter: T j 103 8 120 V 400 V 102 150 °C 25 °C 150 °C, 98% 6 , ] V SD [V] 11 Avalanche energy E AS=f(T j); I D=11 A; V DD=50 V 12 Drain-source breakdown Infineon Technologies
Original
Abstract: IPW60R045CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tjmax · , ±30 T C=25 °C 431 W -55 . 150 °C T j, T stg Mounting torque Rev. 2.0 M3 and , DD=400 V, I D=44 A, V GS=0 to 10 V nC Reverse Diode Diode forward voltage V SD Reverse , (V SD) parameter: V DD parameter: T j 103 10 120 V 8 102 400 V I F [A] V , 100 0 150 0.5 1 Q gate [nC] 1.5 2 V SD [V] 11 Avalanche energy 12 Infineon Technologies
Original
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