500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Top Results

Part Manufacturer Description Datasheet BUY
TCM1050P Texas Instruments Dual Transient-Voltage Suppressor 8-PDIP visit Texas Instruments

scs thyristor

Catalog Datasheet MFG & Type PDF Document Tags

scs thyristor

Abstract: BTA16-600 THYRISTOR SELECTION GUIDE SENSITIVE GATE PLASTIC CASE SCR'S (2) Ig t = 0.05 mA (3) Ig t = 0.2 , THYRISTOR SELECTION GUIDE STANDARD PLASTIC CASE SCR'S (Continued) A Case RD 91 \ It(rms) # * c , -600 BTW50-800 BTW50-1000 BTW50-1200 THYRISTOR SELECTION GUIDE OVERVOLTAGE PROTECTION SCR'S Case , - ) 25 50 100 200 (1) Vd RM S 800 V - tq S 12 fis / VQRM ä 1000 V - tq < 20 ns 7 SCS-1HOMSON 3/11 r. B8BDE08®mui©irra@isgii®s 37 THYRISTOR SELECTION GUIDE MODULE Case ISOTOP Vd
-
OCR Scan
BTW67-800 BTW69-200 BTW69-1200 BTW39-100 BTW48-400 scs thyristor BTA16-600 BTW69-1200 SCR AVS1BC BTW67-200 BTW67-400 BTW67-600 BTW67-1000 BTW67-1200
Abstract: SPE C IAL DEVICES SIDAC-BIDIRECTIONAL THYRISTOR DIODES (For Pulse Generating and Switching Applications) Maximum Ratings NTE Type Number Diagram Number Breakover Voltage (Volts) On Voltage (Volts) Effective Current (Amps) Surge Current (Amps) Holding Current (mA) V bo , generators Fluorescent lighting ignitors SILICON CONTROLLED SWITCH (SCS) Maximum Ratings 239 Case , transistor Base (y > o < Collector NPN transistor o Emitter SCS CIRCUIT SYMBOL -
OCR Scan
Abstract: SPECIAL DEVICES SIDAC-BIDIRECTIONAL THYRISTOR DIODES (For Pulse Generating and Switching Applications) Maximum Ratings NTE Type Number Diagram Number Breakover Voltage (Volts) V bo VT Itrms *T SM 'H o ld Pd 6415 395 40 to 60 1.5 1 13 50 850 6416 395 , voltage power supplies SILICON CONTROLLED SWITCH (SCS) Maximum Ratings NTE Type Number Case , Collector NPN transistor Base O ' SCS CIRCUIT SYMBOL See Diagrams, beginning on Page 1-95 1-92 -
OCR Scan
L431SSR

Diode LT 410

Abstract: F = 7 SCS -THOMSON * 7 i» MDS35 M © 3 © iL iC T [i» ® (g S DIODE /THYRISTORMODULE , CONNECTIONS 1 2 3 4 : Thyristor Gate (G) : Thyristor Cathode (K) : Thyristor Anode/Diode Cathode (I , dissipation versus average on-state current. (Sinusoidal waveform : Thyristor or Diode) Fig. 2 , thermal resistances heatsink + contact. (Sinusoidal waveform : Thyristor or Diode) P(avXW) 50 45 40 , current. (Rectangular waveform : Thyristor or Diode) P(av)(W) fOn \ Tt 5 0 I 30 0 10
-
OCR Scan
Diode LT 410

Thyristor mw 134

Abstract: transistor KIA-70 TETRODE THYRISTOR Planar p-n-p-n trigger device in a microminiature plastic envelope. It is intended for use as a programmable trigger device (SCS = silicon controlled switch). QUICK REFERENCE DATA Anode , thyristor | | N AMER PHILIPS/DISCRETE b7E T> BRY62 e2 TR2 c2 »1 TR1 ei P N N P P N jr Fig. 2 , Manufacturer BRY62 â  bbSB'iai 0D25MM7 032 «APX N AMER PHILIPS/DISCRETE b7E ]> THYRISTOR Anode to cathode , disappears, which means that the thyristor starts triggering. Fig. 4 Switching times waveforms. 1382 April
-
OCR Scan
Thyristor mw 134 transistor KIA-70 Emitter Turn-Off thyristor TRANSISTOR 1383 LT99 L7E transistor
Abstract: P-N-P-N PLANAR TETRODE THYRISTOR Planar p-n-p-n trigger device in a microminiature plastic envelope. It is intended for use as a program­ mable trigger device (SCS = silicon controlled switch). QUICK , thyristor N AMER PHILIPS/DISCRETE lal b7E D (a, I Fig. 2 Circuit diagram. CHARACTERISTICS , J b?E ] > V THYRISTOR Anode to cathode On-state voltage IA = 50 mA; lga = 0; Rgk_|< = , Fig. 4 disappears, which means that the thyristor starts triggering. 1382 April 1991 Fig. 4 -
OCR Scan
7Z85014 DD55445 S3T31

2n2646 equivalent

Abstract: 2N4991 resistance threshold and four-layer switch devices. Each of these devices can be used as a power thyristor , SWITCH (SCS)â'"high triggering sensitivity, 4-lead capability for multiple loads or dv/dt suppression , integrated circuit having thyristor electrical characteristics closely approximating those of an "ideal" , 05 120 3 5 1 3 300 6 10 500 1.0 1.5 3 5 16 262 SILICON CONTROL SWITCHES (SCS) High , integrated circuit having the electrical characteristics of a bilateral thyristor. The device is designed to
-
OCR Scan
2N2646 2N4991 2n2646 equivalent 2N4991 equivalent Silicon unilateral switch SBS thyristor 2n4991 2N489-494 2N2646-47 2N489-94 2N1671 2H21S0

2n2646 equivalent

Abstract: 2N2646 resistance threshold and four-layer switch devices. Each of these devices can be used as a power thyristor , SWITCH (SCS)â'"high triggering sensitivity, 4-lead capability for multiple loads or dv/dt suppression , integrated circuit having thyristor electrical characteristics closely approximating those of an "ideal" , 05 120 3 5 1 3 300 6 10 500 1.0 1.5 3 5 16 262 SILICON CONTROL SWITCHES (SCS) High , circuit having the electrical characteristics of a bilateral thyristor. The device is designed to switch
-
OCR Scan
triac phase control EQUIVALENT 2N1671 2N602B four-layer diode SBS thyristor 2N4987 2N2647 2N6027 2N602 INI4993

scs thyristor

Abstract: thyristor firing circuits FEATURES â  SPACE SAVING : MONOLITHIC FIRE LIGHTER FUNCTION INTEGRATION â  DEDICATED THYRISTOR , . The main applications are ignitor circuits such as : fuel ignitions / gas boilers. Th : Thyristor , Conditions Value Unit Vf If = 2A tp< 1 ms Tj = 25 °C MAX 1.7 V THYRISTOR (Th) and ZENER (Z) PARAMETERS , the spark frequency and to limitate the current from the mains. Its value shall allow the thyristor Th , gate of the thyristor Th which fires. The firing of the thyristor causes an alternating current to
-
OCR Scan
FLC02-200D thyristor firing circuits scr firing gas ignition Thyristor 220V lighter ignitor Transistor t capacitor discharge ignition scr FLC02

Thyristor mw 134

Abstract: l1a marking BRY62 J v _ SILICON P-N -P-N PLANAR TETRODE THYRISTOR Planar p-n-p-n , device (SCS = silicon controlled switch). Q UICK REFERENCE D A T A Anode gate - cathode voltage Anode , rating is not exceeded. 634 September 1994 \ r Silicon p-n-p-n planar tetrode thyristor B , thyristor starts triggering. Fig. 4 Switching times waveforms. 636 September 1994 Silicon p-n-p-n planar tetrode thyristor BRY62 Turn-off time (Figs 5 and 6) Rgk Rgk Rgk 1 kn iokn 10 kiî
-
OCR Scan
l1a marking Tetrode pnpn

2n2646 equivalent

Abstract: IN5059 resistance threshold and four-layer switch devices. Each of these devices can be used as a power thyristor , SWITCH (SCS)â'"high triggering sensitivity, 4-lead capability for multiple loads or dv/dt suppression , integrated circuit having thyristor electrical characteristics closely approximating those of an "ideal" , 05 120 3 5 1 3 300 6 10 500 1.0 1.5 3 5 16 262 SILICON CONTROL SWITCHES (SCS) High , , monolithic integrated circuit having thyristor electrical characteristics closely approximating those of an
-
OCR Scan
2N4990 SUS-2N4986 IN5059 3N84 SUS 2N4987 2N4987-90 2N4987 equivalent

2N4983

Abstract: transistor 2N4983 resistance threshold and four-layer switch devices. Each of these devices can be used as a power thyristor , SWITCH (SCS)â'"high triggering sensitivity, 4-lead capability for multiple loads or dv/dt suppression , integrated circuit having thyristor electrical characteristics closely approximating those of an "ideal" , 05 120 3 5 1 3 300 6 10 500 1.0 1.5 3 5 16 262 SILICON CONTROL SWITCHES (SCS) High , circuit having thyristor electrical characteristics closely approximating those of an "ideal" four layer
-
OCR Scan
2N4983 2N4986 transistor 2N4983 general electric C22B CIRCUITS BY USING 2N6027 GE C22B GE 2N4992 S-2N4983 2N4963

3N84

Abstract: 2N4988 , planar monolithic integrated circuit having thyristor electrical characteristics closely approximating , SWITCHES (SCS) High triggering sensitivity. 4 lead capability for multiple load or dv/dt suppression , construction and varied applications. SCS nomenclature permits the reverse characteristics of all three , TRIGGERS SCS BUT HAS INSUFFICIENT AMPLITUDE TO TRIGGER SCS *L. A THREE VOLT INPUT PULSE IS DELAYED IN REACHING SCS * BY THE IOK AND .OOljif INTEGRATING NETWORK. INSTEAD, IT TRIGGERS SCS *Z THEN RAISES THE
-
OCR Scan
2N4988 2N4989 2N4984 2N4985 2N327 RCA SCR 2n 3N85 IN4I48 40v neon lamp 2N499 2N27W

GE TRIAC SC40B

Abstract: 2n4992 resistance threshold and four-layer switch devices. Each of these devices can be used as a power thyristor , SWITCH (SCS)â'"high triggering sensitivity, 4-lead capability for multiple loads or dv/dt suppression , integrated circuit having thyristor electrical characteristics closely approximating those of an "ideal" , 05 120 3 5 1 3 300 6 10 500 1.0 1.5 3 5 16 262 SILICON CONTROL SWITCHES (SCS) High , integrated circuit having the electrical characteristics of a bilateral thyristor. The device is designed to
-
OCR Scan
SC40B GE TRIAC SC40B 2n4992 transistor 2n4992 2N4992 equivalent triac 9012 2N4992

2N2646 equivalent

Abstract: SUS-2N4989 resistance threshold and four-layer switch devices. Each of these devices can be used as a power thyristor , SWITCH (SCS)â'"high triggering sensitivity, 4-lead capability for multiple loads or dv/dt suppression , integrated circuit having thyristor electrical characteristics closely approximating those of an "ideal" , 05 120 3 5 1 3 300 6 10 500 1.0 1.5 3 5 16 262 SILICON CONTROL SWITCHES (SCS) High , silicon planar, monolithic integrated circuit having thyristor electrical characteristics closely
-
OCR Scan
SUS-2N4989 20 amp 800 volt triac 3N81 D5K2 unijunction 047/1F GEC32U J2N2647

2N4985

Abstract: 2N2646 cross reference resistance threshold and four-layer switch devices. Each of these devices can be used as a power thyristor , SWITCH (SCS)â'"high triggering sensitivity, 4-lead capability for multiple loads or dv/dt suppression , integrated circuit having thyristor electrical characteristics closely approximating those of an "ideal" , 05 120 3 5 1 3 300 6 10 500 1.0 1.5 3 5 16 262 SILICON CONTROL SWITCHES (SCS) High , planar, monolithic integrated circuit having thyristor electrical characteristics closely approximating
-
OCR Scan
2N2646 cross reference GE SCR cross reference SUS 2N4984 GE SCR 1000 AMP 2N4991 "cross reference" SCR 2N2646 I2N2647

diac SBS 14

Abstract: diac 083 fa^iasq Qoaab73 7n MNTE T-25-01 SIDAC-BIDIRECTIONAL THYRISTOR DIODES (For Pulse Generating and , lighting ignitors SILICON CONTROLLED SWITCH (SCS) NTE Type Number CaM Style Diagram Number Polartty , NPN 70 5 70 -100 -500 PNP transistor Base O f-O Collector NPN transistor SCS CIRCUIT SYMBOL , having thyristor electrical characteristics closely approximating those of an "ideal" four layer diode , characteristics from 28 to 63 Volts. The DIAC semiconductor is a full-wave or bidirectional thyristor. It is
-
OCR Scan
diac SBS 14 diac 083 NTE6405 varactor diode bb 205 IR 944 triac low voltage scr T098/T092

3N81

Abstract: IN4148 anode cathode , planar monolithic integrated circuit having thyristor electrical characteristics closely approximating , SWITCHES (SCS) High triggering sensitivity. 4 lead capability for multiple load or dv/dt suppression , controlled switches (SCS) offering outstanding circuit design flixibility by providing leads to all four , reliability and uniformity at low cost. The SCS is thoroughly characterized at temperature extremes to permit , . SCS nomenclature permits the reverse characteristics of all three junctions to be specified. rVâ
-
OCR Scan
IN4148 anode cathode eto thyristor thyristor igc TRANSISTOR BO 344 SCR thyristor test IR SCR 16 RC 100A

DIAC ecg6407

Abstract: h06 diode Special Purpose Devices (cont'd) PNP EMITTER ft 4 PNP COLLECTOR NPH BASE Silicon Controlled Switch (SCS) (A) ç4 ANOOe «ä*> CAT HOCH NPN ««E COLLECTOR > NPN EMITTER Transistor Equivalent Circuit ANODE GATE (GC) (Clil CATHODE Thyristor Circuit ECG Type BVCBO Volts bvebo Volts bvcer Volts H FE Min IGT Max mA VGT Max Volts IT Max mA IT Pk Max mA 'TSM Max mA IH Max mA pd Max mW Package/ Outline No. ECG239 PNP -70 -70 -70 0.1 1.0 0.8 50 100 500 1.0 200 TO-72 Fig. S8 NPN 70 5 70 15 1.0 1.2
-
OCR Scan
ECG6407 ECG6408 ECG6411 ECG6412 ECG6415 ECG6416 DIAC ecg6407 h06 diode Bidirectional Diode Thyristors

3n84

Abstract: SCR nomenclature, General electric , planar monolithic integrated circuit having thyristor electrical characteristics closely approximating , SWITCHES (SCS) High triggering sensitivity. 4 lead capability for multiple load or dv/dt suppression , controlled switch (SCS) offering outstanding circuit design flexibility by providing leads to all four , rehability and uniformity atlow cost. The SCS is thoroughly characterized at temperature extremes to permit , POINT. OF SUBSCRIPT LETTE*. fio. 1 I pio. a DEFINITION OF TERMS USED IN SCS SPLL11 ICAI IONS PNPN
-
OCR Scan
SCR nomenclature, General electric scr 6A 2N4993 9019 transistor 3N83 n4148 IN4I46 500PPS
Showing first 20 results.