500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Top Results

Part Manufacturer Description Datasheet BUY
144473-2 TE Connectivity Ltd CET 2 POS ASSY JPT visit Digikey
144473-3 TE Connectivity Ltd SEALED CONN 2P RGE visit Digikey
144477-1 TE Connectivity Ltd CET 7 POS ASSY FOR JPT visit Digikey
144473-8 TE Connectivity Ltd CET 2 POS ASSY JPT visit Digikey
144465-000 TE Connectivity Ltd CIRCULAR ADAPTER visit Digikey Buy
144479-1 TE Connectivity Ltd CET 2 POS ASSY FOR JPT visit Digikey

scl 1444

Catalog Datasheet MFG & Type PDF Document Tags

sot 363 dual smd ea code transistor

Abstract: smd diode 4pin D13 respective owners. Application Note 1444 7 CELLS 20 20 VCELL7 19 CB7 VCELL6 V CB5 , AN1444.0 December 15, 2008 Application Note 1444 Initial Testing supplies or battery cells. To , 15, 2008 Application Note 1444 USB to I2C interface · Once the power supply connections are , ISLI2C-KIT. . ISL9208EVAL2Z J8 SDA NC GND SCL FETs DeVaSys BOARD CABLE J29 5-PIN TO 5 , .0 December 15, 2008 Application Note 1444 minimum voltage by more than 30mV. If so, note the cell
Intersil
Original
sot 363 dual smd ea code transistor smd diode 4pin D13 BAT6203WE scl 1444 smd diode 4pin D11 ADUM1250ARZ ISL9208 ISL92

SPDC1016

Abstract: scl 1444 ) Characteristic Symbol Max. Min. Unit tC - 400 ns Low period of SCL clock tLOW - 170 ns High period of SCL clock tHIGH - 170 ns Address setup time tAS - , 13.5 ms Rise time of SCL tRSC 15 - ns Fall time of SCL tFCL 15 - ns Rise time of SDA tRDA 15 - ns Fall time of SDA tFDa 15 - ns Period of SCL , 11 VSS 641 -1445 12 TEST 635 1444 13 CF1 515 1444 14 CF2
Sunplus Technology
Original
SPR1024A SPDC1016 IC 4043 configuration ic 4043 SPDC1064 sunplus spdc epcon

scl 1444

Abstract: NES1818-20B dB Typical Linear Gain LOW IMD -44 dBc @ 32 dBm (SCL) CLASS A OPERATION PARTIAL INTERNAL MATCH 8.0 , Linear Gain 3rd Order Intermodulation Distortion at P o u r . 3 2 dBm (SCL)* Saturated Drain Current, V G , ) Notes: 1. PidB: Output power at the 1 dB Gain Compression Point 2. SCL: Single Carrier Level 2-29 , 0.205 0.310 0.416 ANG -152.1 -172.0 165.1 149.4 144.4 139.6 128.1 122.0 114.9 107.0 96.3 80.8 76.4 71.6 , 1.873 1.579 1.462 1.462 1.622 1.516 1.387 1.399 1.444 1.480 1.483 1.445 1.452 1.473 1.482 1.479 1.502
-
OCR Scan
NES1818-20B 4525 gm NEZ1818-20B 799GH IS12S21I

scl 1444

Abstract: 4953 SCL Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH DESCRIPTION The EIC5964-5 is a , IM3 Output 3rd Order Intermodulation Distortion 2 f = 10 MHz 2-Tone Test; Pout = 26.5 dBm S.C.L , Ohm gate resistor. 2. S.C.L. = Single Carrier Level. 3. Overall Rth depends on case mounting , S12 (dB) 0. 3. -68.84 -84.6 -101.78 -121 -144.4 -175.32 131.27 -19.28 -68.73 -97.49 , Operating Region f1 or f2 Pout [S.C.L.] (dBm) Total Power Dissipation (W) Power Dissipation vs
Excelics Semiconductor
Original
4953 4953 FET

FLM5359-12F

Abstract: S.C.L. Thermal Resistance Rth Channel to Case - 2.3 2.6 °C/W 10V x Idsr x Rth , G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level 1 FLM5359-12F C-Band Internally , Power (S.C.L.) (dBm) Total Power Dissipation (W) 60 17 19 21 23 25 27 Input Power (S.C.L.) (dBm) S.C.L.: Single Carrier Level VDS=10V P1dB 42 Pin=33dBm 41 40 31dBm 39 , -99.5 .063 -144.4 .350 108.2 6000 .513 59.3 3.141 -114.9 .064 -159.7
Fujitsu
Original
FCSI0499M200

pt 2097

Abstract: S.C.L. Channel to Case 10V x Idsr x Rth VDS = 10V, IDS = 0.6 IDSS(Typ.), f = 14.5 ~ 15.3 GHz, ZS = ZL = , 66 Unit mA mS V V dBm dB mA % dB dBc °C/W °C G.C.P.: Gain Compression Point, S.C.L.: Single , Total Power Dissipation (W) 31 Output Power (S.C.L.) (dBc) -10 20 29 Pout 27 -20 , 26 Case Temperature (°C) Input Power (S.C.L.) (dBm) S.C.L.: Single Carrier Level OUTPUT , -87.9 -142.8 144.4 117.3 102.1 91.1 80.1 69.8 57.8 43.8 25.7 0.2 S-PARAMETERS VDS = 10V, IDS = 900mA
Eudyna Devices
Original
pt 2097 FLM1415-3F

FLM1415-3F

Abstract: 513 s12 datasheet -Tone Test Pout = 23.5dBm S.C.L. Thermal Resistance Rth Channel to Case - 5.0 6.0 °C/W , 1.4 August 2004 G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level 1 FLM1415 , IM3 23 IM3 (dBc) Output Power (S.C.L.) (dBc) Total Power Dissipation (W) 30 -50 , Power (dBm) Output Power (dBm) 36 22 Input Power (S.C.L.) (dBm) S.C.L.: Single Carrier , .603 -13.4 14600 .089 144.4 2.074 35.4 .110 41.5 .554 -21.3 14700
Eudyna Devices
Original
513 s12 datasheet high power FET transistor s-parameters
Abstract: G1dB Idsr add G IM3 Rth Tch f = 5.9 GHz, f = 10 MHz 2-Tone Test Pout = 30.5dBm S.C.L. Channel to Case , % dB dBc °C/W °C 3250 3800 G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level , OUTPUT POWER & IM3 vs. INPUT POWER Output Power (S.C.L.) (dBm) 37 35 33 31 29 27 25 23 IM3 Pout , (S.C.L.) (dBm) S.C.L.: Single Carrier Level OUTPUT POWER vs. FREQUENCY 43 OUTPUT POWER vs. INPUT , .050 .054 .057 .060 .063 .064 .066 21.1 -4.1 -26.3 -49.2 -71.0 -91.6 -110.3 -128.1 -144.4 -159.7 -174.1 Eudyna Devices
Original
Abstract: G1dB Idsr hadd ÆG IM3 Rth ÆTch f = 5.9 GHz, Æf = 10 MHz 2-Tone Test Pout = 30.5dBm S.C.L. Channel to , mA % dB dBc ¡C/W ¡C 3250 3800 G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level , OUTPUT POWER & IM3 vs. INPUT POWER Output Power (S.C.L.) (dBm) 37 35 33 31 29 27 25 23 17 19 21 23 25 27 Input Power (S.C.L.) (dBm) S.C.L.: Single Carrier Level IM3 Pout Total Power Dissipation (W) 50 , .064 .066 21.1 -4.1 -26.3 -49.2 -71.0 -91.6 -110.3 -128.1 -144.4 -159.7 -174.1 S22 MAG .434 .401 Fujitsu
Original
Abstract: 23.5dBm S.C.L. Channel to Case 10V x Idsr x Rth VDS = 10V f = 14.5 ~ 15.3 GHz IDS @ 0.65 IDSS(Typ.) ZS = , 6.0 66 Unit mA mS V V dBm dB mA % dB dBc ¡C/W ¡C G.C.P.: Gain Compression Point, S.C.L.: Single , DERATING CURVE 30 Output Power (S.C.L.) (dBc) Total Power Dissipation (W) OUTPUT POWER & IM3 vs. INPUT , ) Input Power (S.C.L.) (dBm) S.C.L.: Single Carrier Level OUTPUT POWER vs. FREQUENCY 37 36 35 34 33 32 , .283 .292 .290 .263 .230 .196 -70.6 -87.9 -142.8 144.4 117.3 102.1 91.1 80.1 69.8 57.8 43.8 25.7 0.2 Fujitsu
Original
FCSI0598M200
Abstract: S.C.L. Channel to Case 10V x Idsr x Rth VDS = 10V, IDS = 0.6 IDSS(Typ.), f = 14.5 ~ 15.3 GHz, ZS = ZL = , 66 Unit mA mS V V dBm dB mA % dB dBc °C/W °C G.C.P.: Gain Compression Point, S.C.L.: Single , Total Power Dissipation (W) 31 Output Power (S.C.L.) (dBc) -10 20 29 Pout 27 -20 , 26 Case Temperature (°C) Input Power (S.C.L.) (dBm) S.C.L.: Single Carrier Level OUTPUT , -87.9 -142.8 144.4 117.3 102.1 91.1 80.1 69.8 57.8 43.8 25.7 0.2 S-PARAMETERS VDS = 10V, IDS = 900mA Fujitsu
Original

FLM1415-3F

Abstract: -Tone Test Pout = 23.5dBm S.C.L. Thermal Resistance Rth Channel to Case - 5.0 6.0 °C/W , 1.2 August 1999 G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level 1 FLM1415 , vs. INPUT POWER V 14.8 18 Input Power (S.C.L.) (dBm) S.C.L.: Single Carrier Level VDS , IM3 (dBc) Output Power (S.C.L.) (dBc) Total Power Dissipation (W) 30 FLM1415 , 144.4 2.074 35.4 .110 41.5 .554 -21.3 14700 .151 117.3 2.095 23.2
Fujitsu
Original
Abstract: Pout = 30.5dBm S.C.L. Channel to Case 10V x Idsr x Rth Min. -1.0 -5.0 40.5 8.5 - Limit , .: Gain Compression Point, S.C.L.: Single Carrier Level CASE STYLE ESD IK Class 3A Note : Based , ) Output Power (S.C.L.) (dBm) Total Power Dissipation (W) OUTPUT POWER & IM3 vs. INPUT POWER Case Temperature (deg.C) Input Power (S.C.L.) (dBm) S.C.L.: Single Carrier Level OUTPUT POWER vs. INPUT POWER , -49.2 -71.0 -91.6 -110.3 -128.1 -144.4 -159.7 -174.1 MAG 0.434 0.401 0.372 0.352 0.343 Sumitomo Electric
Original

3842F

Abstract: FLM5359-12F S.C.L. Thermal Resistance Rth Channel to Case - 2.3 2.6 °C/W 10V x Idsr x Rth , G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level FLM5359-12F C-Band Internally Matched FET POWER DERATING CURVE OUTPUT POWER & IM3 vs. INPUT POWER Output Power (S.C.L.) (dBm) 50 40 , (S.C.L.) (dBm) S.C.L.: Single Carrier Level OUTPUT POWER vs. FREQUENCY VDS=10V P1dB VDS , 5900 .485 76.0 3.250 -99.5 .063 -144.4 .350 108.2 6000 .513 59.3
Eudyna Devices
Original
3842F

gm 4511

Abstract: GP 841 Diode -20 -15 -10 -5 0 5 10 IM3(dBc) Po(SCL)(dBm) Pi(SCL) vs.Po(SCL),IM3 15 Pin(SCL)(dBm) Mitsubishi Electric July 1999 MGF0917A freq. (GHz) 0.4 0.6 0.8 1.0 1.2 , 1.944 1.893 1.844 1.799 1.755 1.714 1.675 1.638 1.603 1.569 1.537 1.505 1.474 1.444 S12
Mitsubishi
Original
gm 4511 GP 841 Diode

FLM5359-12F

Abstract: CS 5800 Intermodulation Distortion IM3 f = 5.9GHz, Af= 10 MHz 2-Tone Test Pout = 30.5dBm s.c.l. -44 -46 - dBc Thermal , CASE STYLE: IK G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level Edition 1.2 August 1999 , im3 -20 _ -30 g -40 f -50 17 19 21 23 25 27 Input Power (S.C.L.) (dBm) S.C.L.: Single , .060 -128.1 .346 121.8 5900 .485 76.0 3.250 -99.5 .063 -144.4 .350 108.2 6000 .513 59.3 3.141 -114.9
-
OCR Scan
CS 5800

GP 841 Diode

Abstract: 4511 gm -20 -15 -10 -5 0 5 10 IM3(dBc) Po(SCL)(dBm) Pi(SCL) vs.Po(SCL),IM3 15 Pin(SCL)(dBm) Mitsubishi Electric July 1999 MGF0917A freq. (GHz) 0.4 0.6 0.8 1.0 1.2 , 1.893 1.844 1.799 1.755 1.714 1.675 1.638 1.603 1.569 1.537 1.505 1.474 1.444 S12 Ang
Mitsubishi
Original
4511 gm GG SMD fet 2255 K 3561

4953

Abstract: 175C dBc IM3 at PO = 26.5 dBm SCL 100% Tested for DC, RF, and RTH Caution! ESD sensitive device , Output 3rd Order Intermodulation Distortion 2 f = 10 MHz 2-Tone Test; Pout = 26.5 dBm S.C.L VDS = 10 V , . Tested with 100 Ohm gate resistor. 2. S.C.L. = Single Carrier Level. 3. Overall Rth depends on case , 0.0578 -41.76 0.436 -157.76 5.8 0.6819 -144.4 3.1226 -14.08 0.0756 -70.41 , 15 Safe Operating Region 10 f1 or f2 Pout [S.C.L.] (dBm) Total Power Dissipation (W
Excelics Semiconductor
Original
175C
Abstract: Pout = 23.5dBm S.C.L. Thermal Resistance Rth Channel to Case - 5.0 6.0 °C/W , Power Dissipation (W) OUTPUT POWER & IM3 0 50 100 150 200 Input Power (S.C.L.) (dBm) S.C.L.: Single Carrier Level Case Tem perature (°C) OUTPUT POWER vs. FREQUENCY 36 V DS , 14600 .089 144.4 2.074 35.4 .110 41.5 .554 -21.3 14700 .151 117.3 -
OCR Scan
1415-3F
Abstract: LU < CL MGF0914A I M3 vs. Po(S.C.L) Po(S.C.L)(dBm) Mitsubishi Electric 10 Feb. 1999 , ) 23.03 21.87 20.60 19.31 18.06 16.92 15.93 15.11 14.44 13.84 13.17 12.55 11.98 11.45 10.96 10.49 10.06 -
OCR Scan
Showing first 20 results.