500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Top Results

Part Manufacturer Description Datasheet BUY
RI-TRP-WFOB-01 Texas Instruments KEYRING TAG (READ WRITE) 1-RFIDP -40 TO 70 visit Texas Instruments
RI-ANT-S01C-00 Texas Instruments SERIES 2000 STICK ANTENNA 1- -30 TO 85 visit Texas Instruments

s8550 d h

Catalog Datasheet MFG & Type PDF Document Tags

Transistor S8550 2TY

Abstract: sot-23 Marking 2TY Dim A E 1.25 1.35 C 1.0Typical D H C 0.43 E 0.35 0.48 1.85 1.95 H G 0.37 G J D 0.02 0.1 J K 0.1Typical 2.35 2.45 All , High Collector Current.(IC= -500mA S8550 Pb Lead-free Complementary To S8050. Excellent HFE , S8550 Package Code 2TY SOT-23 MAXIMUM RATING @ Ta=25 unless otherwise specified Symbol , Production specification Silicon Epitaxial Planar Transistor ELECTRICAL CHARACTERISTICS @ Ta=25 S8550
BL Galaxy Electrical
Original
Transistor S8550 2TY sot-23 Marking 2TY Transistor 2TY transistor s8550 S8550 equivalent SOT-23 2ty BL/SSSTC080 3000/T

s8550

Abstract: S8550 equivalent http://www.weitron.com.tw D 160-300 S8550 WEITRON http://www.weitron.com.tw S8550 TO-92 Outline Dimensions unit:mm E H Dim A B C D E G H J K L L C J K D A , S8550 PNP General Purpose Transistors TO-92 P b Lead(Pb)-Free 1. E MIT T E R 2. B A SE , itter Cutoff Current (V E B = -3 . 0 V d c, I C =0 ) IE B O - -0 . 1 uAdc WEITRON http://www.weitron.com.tw S8550 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Symbol Min
Weitron
Original
S8550 applications s8550 d h s8550 c S8550 DATASHEET s8550 TO92 s8550 d 270TYP
Abstract: 0 0.5 1.0 B C D 4 E F 1.5 3 G 2 1 H Position (mm , Si APD array S8550-02 4 × 8 element APD array with low noise and enhanced short-wavelength sensitivity The S8550-02 is an APD (avalanche photodiode) array designed for short wavelength detection, featuring low noise and low terminal capacitance. The S8550-02 also offers uniform gain and small crosstalk , 0.78 0.2 ±15 - % times/°C ns V/°C - www.hamamatsu.com 1 Si APD array S8550 Hamamatsu
Original
S8550-02 D-82211 KAPD1031E01

transistors s8550

Abstract: =30MHz) Classification of hFE(1) Rank B C Range 85-160 120-200 WEITRON http://www.weitron.com.tw D 160-300 S8550 WEITRON http://www.weitron.com.tw S8550 TO-92 Outline Dimensions unit:mm E H Dim A B C D E G H J K L L C J K D A B G WEITRON http , S8550 PNP General Purpose Transistors TO-92 * "G" Lead(Pb)-Free 1. EMITTER 2. BASE 3 , = -3.0Vdc, I C=0) IEBO - -0.1 uAdc WEITRON http://www.weitron.com.tw S8550 ELECTRICAL
Weitron
Original
transistors s8550

s8550 npn

Abstract: NPN S8550 UNISO TE NIC CHNO G SCO LTD LO IE ., S8550 NPN SILICON TRANSISTOR LOW V OLT AGE H I GH CU RREN T SM ALL SI GN AL PN P T RAN SI ST OR  DESCRI PT I ON The UTC S8550 is a low , www.unisonic.com.tw D 160-300 E 280-400 2 of 4 QW-R201-014.B S8550  PNP SILICON TRANSISTOR T , 3 E B C E B C Packing Tape Box Bulk 1 of 4 QW-R201-013.C S8550  PNP SILICON , ) 3 of 4 QW-R201-014.B S8550 PNP SILICON TRANSISTOR UTC assumes no responsibility for
Unisonic Technologies
Original
s8550 npn NPN S8550 S8550L- S8550G-

apd array

Abstract: C D 4 E 1.5 F 3 G 2 1 H KAPDC0039EA KAPDB0202EA Dimensional outline , Si APD array S8550-02 4 × 8 element APD array with low noise and enhanced short-wavelength sensitivity The S8550-02 is an APD (avalanche photodiode) array designed for short wavelength detection, featuring low noise and low terminal capacitance. The S8550-02 also offers uniform gain and small crosstalk , www.hamamatsu.com 1 Si APD array S8550-02 Quantum efficiency vs. wavelength Gain vs. reverse voltage
Hamamatsu
Original
apd array SE-171

S8550

Abstract: 2s8550 : IC=0.5A MARKING: 2TY V G H 0.177 0.450 0.600 0.890 1.020 2.100 2.500 0.450 0.600 All Dimension in mm C D 0.100 0.085 V B S 2 2.040 0.013 S Top View 1 1.780 L 3 0.500 K L 1.110 0.370 H A 1.400 0.890 D , S8550 PNP Silicon Elektronische Bauelemente Plastic-Encapsulate Transistors RoHS Compliant , specification will not be informed individual Page 1 of 2 S8550 PNP Silicon Elektronische Bauelemente
SeCoS
Original
2s8550 marking 2ty S8050 pnp S8550 SOT-23 2TY transistor S8050 SOT-23

transistor s8550

Abstract: transistor TO-92 S8550 150 MHz f=30MHz CLASSIFICATION OF H FE(1) Rank Range B C D 85-160 120-200 , ) h FE ,TYPIC AL PULSED CURRENT GAIN S8550 Collector-Emitter Saturation Voltage vs Collector , S8550 TO-92 Plastic-Encapsulate Transistors Transistor(PNP) FEATURE Power dissipation o P CM , =-20 V I B =0 -0.2 A Emitter cut-off current I EBO V EB =-3 -0.1 A H FE(1) V CE =-1 V ,I C =-50mA 85 H FE(2) V CE =-1V , I C =-500mA 50 collector-emitter
-
Original
transistor TO-92 S8550 s8550 transistor 01ah BR S8550
Abstract: Pow er d issip a tio n TO-92 1. E M IT T ER 2 .B A S E 3 .C O L L E C T O R T V T Pcm , °C E L E C T R I C A L C H A R A C T E R IS T IC S ( T a m b = 25°C u n l e s s o t h e r w i s e , , lc=0 t V ce -1 V, lc= -50 mA I til DC current gain i h F E (2 ) V ce -1 V, lc , CLASSIFICATION OF Rank Range A 85-160 H feid B 120-200 C 160-300 Typical Characteristics S8550 V c e (V),COLLECTOR-EMITTER VOLTAGE lc(mA),COLLECTOR CURRENT DC current Gain Static -
OCR Scan

s8050 d h

Abstract: NPN S8550 S8050 NPN EPITAXIAL SILICON TRANSISTOR High Current Application High Collector Curre nt Ic=700mA TO- 92 High Collector P owe r Dissipa tion P c=625mW Comple mentary to S8550 ABS OLUTE , I C = 100mA VCE = 1V 85 I C = 500mA VCE = 1V 40 DC current gain h FE 160 , Output Ca pa cita nce Cob Tra nsition Fre quency fT * h F E Classification: B:85~160 , C:120~200 VCB= 10V 9.0 f =1MHz VCE = 10V IC = 50 mA 100 PF MHz , D:160~300
-
Original
s8050 d h transistor s8050 S8050 npn D160 data sheet transistor s8050 S8050 equivalent

s8050 d h

Abstract: TIC 160 D S8550 P NP EP ITAXIAL S ILICON TRANSISTOR High Current Application High Collector curre nt Ic= -700mA TO- 92 High Collector P owe r Dissipa tion P c=625mW Comple me ntary to S8050 ABS OLUTE MAXIMUM RATINGS (Ta =25 ) S ymbol Value Unit Collector-Ba s e Volta ge VCBO , h FE 160 300 Collector-e mitter s a tura tion volta ge VCE (s a t) I C =-500 mA I B , VCE =-10V * hFE Classification: B:85~160 , C:120~200 f =1MHz PF 15 100 MHz , D:160
-
Original
TIC 160 D transistor TO-92 S8050 transistor s8050 c S8050 TRANSISTOR

S12926

Abstract: AVALANCHE PHOTODIODES S i P h o t o d i o d e Si APD (ã'¢ãƒã , ƒ— S8550-02 S12023ã'·ãƒªãƒ¼ã'ºãªã© ç"¨é'" ç´«å¤â¼å¯è¦åのæ"度ã''å'ä¸ã•ã›ãã'¿ã'¤ã , ´ å­) S8550-02 端子é"*2 容量 増å'ç‡ Î»=420 nm ãƒ'ッã'±ãƒ¼ã'¸ (pF) 9 (1ç , 15 10 (Typ. λ=420 nm) 1000 S8664-55/-1010 S8550 80 量子å¹ç‡ (%) 受å‰æ"度 (A/W) 100 S8664-55/-1010 S8550 20 増å'ç‡â'é'é›»å§ (Typ. Ta=25 ° C) -20 Â
Hamamatsu
Original
S12926 KAPD0001J06

S8050

Abstract: .j3y 0.450 0.600 All Dimension in mm C H D 2.040 0.013 V 2 1.780 S B S Top View 1 0.500 L 3 1.110 0.370 K L 1.400 0.890 H A 1.200 G 2 Emitter 3.040 D 1 Base Max 2.800 C Collector Min A J Complimentary to S8550 Dim B 3 K J O MAXIMUM RATINGS (TA=25 C unless otherwise noted) Symbol , CLASSIFICATION OF Plastic-Encapsulate Transistors hFE(1) L H 120-200 200-350 Rank Range
SeCoS
Original
2S8050 SOT-23 J3Y S8050 j3y j3y transistor j3y transistor parameters

SOT-23 J3Y

Abstract: j3y transistor K Min Max 2.85 2.95 B B Dim A E 1.25 1.35 C 1.0Typical D H C 0.43 E 0.35 0.48 1.85 1.95 H G 0.37 G J D 0.02 0.1 , BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES S8050 Pb High Collector Current.(IC= 500mA Lead-free Complementary To S8550. Excellent HFE , number: BL/SSSTC079 Rev.A B B 150 MHz hFE(1) L H 120-200 200-350
BL Galaxy Electrical
Original
BR S8050 sot-23 Marking J3Y transistor J3Y Transistor S8050 j3y S8050 applications
Abstract: photodiodes having an internal gain mechanism HAMAMATSU PHOTONICS K.K. S i A v a l a n c h e P h o t o d i o d e Si APD High-speed, high sensitivity photodiodes having an internal gain mechanism , -55/-1010 S8550 - 02 Near infrared Low temperature type coefficient Metal S10341 series 600 , range (nm) 1.6 × 1.6 320 to 1000 (× 32 elements) S8550 - 02 Gain λ=420 nm 50 , 20 °C 40 °C 10 20 5 0 200 (Typ. λ=420 nm) 1000 S8664-55/-1010 S8550 Hamamatsu
Original
KAPD0001E05

S8514

Abstract: "Band Pass Filters" MIC last step of chip realization. The specialization method (Patented) used by T H O M SO N S E M IC O N D , switched capacitors filter specialization is imple mented by T H O M SO N S E M IC O N D U C T O R S , S G S-TH ONS ON 7ÖC D I 7C ^537 G D D b Sb n r^ 78C 0 6 5 6 7 > T-if-o'r TS85XX M ASK - PRO G RAM M ABLE SWITCHED CAPACITOR FILTERS The T S 8 5 X X circuits are H C M O S universal , weeks after the filter gauge definition. This technique has also been used to define T H O M SO N S E M
-
OCR Scan
S8514 8 order low pass butterworth switched capacitor f TS8550 s8510 S8510 TS8531 S8532 CB-98 CB-79
Abstract: UNISO TE NIC CHNO G SCO LTD LO IE ., S8050 NPN SILICON TRANSISTOR LOW V OLT AGE H I GH CU RREN T SM ALL SI GN AL N PN T RAN SI ST OR  DESCRI PT I ON The UTC S8050 is a low , * Collector-Emitter voltage up to 20 V * Complementary to S8550  ORDERI N G I N FORM AT I ON Order Number , V V V MHz pF CLASSI FI CAT I ON OF h FE2 RANK RANGE C 120-200 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw D 160-300 E 280-400 2 of 4 QW-R201-013.C S8050 T Y PI Unisonic Technologies
Original
S8050L- S8050G-

bq 8050

Abstract: HF S4 13003 Switching Diodes G Small Signal Schottky Diodes H BIPOLAR TRANSISTORS J FIELD EFFECT , DTC143TUA 29 DTA143ZE 30 DTC143XCA 28 D D882 26 DTA143ZUA 29 DTC143XE 30 , DTC114YCA 28 DTA123JUA 29 DTC114YE 30 ·D· http://www.galaxycn.com ALPHANUMERIC , MMBD4448W 8 FMMT591 16 MMBD452 7 MMBD6050 6 M1MA141K M H 8 MMBD6100 6 , 16 MMBZ27VDA 48 MMST5401 20 S8550 16 MMBZ27VDC 48 MMST5551 20 S9011
BL Galaxy Electrical
Original
bq 8050 HF S4 13003 F6 13003 bL78L05 HF 13003 bq d882 2SA1201 2SC1654 2SA1203 2SC1766 1N4148W 2SA1204

220V Automatic Voltage Regulator

Abstract: PORTABLE SOLAR MOBILE CHARGER -S-8550/8551 series - 59 STEP-DOWN, PWM CONTROL, PWM/PFM SWITCHABLE SWITCHING REGULATOR , -S-8211C/D series - 76 BATTERY PROTECTION IC FOR 1-CELL PACK , SO 89T- 5 SN 23T- 6 SN 6A T6- 6A( pin H ) SN HS T- ON 8 TO A (A) -9 2 W LP -4 B 12 , to 75mA Linear regulators Output current up to 150mA LDO regulators Page SNT-6A (H , -8333 series 55 1 channel S-8330/8331 series 58 3 channels S-8335 series 57 S-8550/8551
Seiko Instruments
Original
220V Automatic Voltage Regulator PORTABLE SOLAR MOBILE CHARGER 220V 5A Automatic Voltage Regulator 6 pin TRANSISTOR SMD CODE XI 8550 NPN Transistor 220V Automatic Voltage Regulator circuit

S8550 equivalent

Abstract: i A P D ã' M P P C 2 MPPC 2-1 2-2 2-3 2-4 2-5 2-6 å'•ä½åç ç‰¹é•· 特æ , ' MPPCã''ç"¨æ"ã—てã"ますã'' まãã' ã'«ã'¹ã'¿ ムデã'¶ã'¤ ンに S i A P D ã' M P P C ã''å¹åºƒã , '§ ・å''å¥ä»•æ§˜ã§ã'»ãƒ¬ã'¯ãƒç´å¥ãŒå¯èƒ½ S i A P D ã' M P P C KAPDC0006JC æš—é›»æµ , •ã'Œã¾ã™ã'' ã"のãã'ã' ãƒãƒ¼ã'¿ãƒ«ã®æš—電流 (I D)は式 (1)のã' ãã«ãª ますã'' ã , (2) S i A P D ã' M P P C q : IL : Idg: B : M : F : Ids : 1é
Hamamatsu
Original
Showing first 20 results.