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s8050 d h

Catalog Datasheet MFG & Type PDF Document Tags

SOT-23 J3Y

Abstract: j3y transistor H C 0.43 E 0.35 0.48 1.85 1.95 H G 0.37 G J D 0.02 0.1 , S8050 Pb High Collector Current.(IC= 500mA Lead-free Complementary To S8550. Excellent HFE , -23 ORDERING INFORMATION Type No. Marking S8050 Package Code J3Y SOT-23 MAXIMUM RATING @ Ta , S8050 ELECTRICAL CHARACTERISTICS @ Ta=25 unless otherwise specified Parameter Symbol Test , number: BL/SSSTC079 Rev.A B B 150 MHz hFE(1) L H 120-200 200-350
BL Galaxy Electrical
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SOT-23 J3Y j3y transistor BR S8050 transistor S8050 sot-23 Marking J3Y transistor J3Y 3000/T

BR S8050

Abstract: S8050 =30MHz) Classification of hFE(1) Rank B C Range 85-160 120-200 WEITRON http://www.weitron.com.tw D 160-300 S8050 WEITRON http://www.weitron.com.tw S8050 unit:mm TO-92 Outline Dimensions E H TO-92 Dim A B C D E G H J K L L C J K D A B G WEITRON http , S8050 NPN General Purpose Transistors TO-92 * â'Gâ' Lead(Pb)-Free 1. EMITTER 2. BASE , ) IEBO - 0.1 uAdc WEITRON http://www.weitron.com.tw - Vdc S8050 ELECTRICAL
Weitron
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npn s8050 d s8050 d.331 270TYP

BR S8050

Abstract: S8050 equivalent 85-160 120-200 WEITRON http://www.weitron.com.tw D 160-300 S8050 WEITRON http://www.weitron.com.tw S8050 unit:mm TO-92 Outline Dimensions E H TO-92 Dim A B C D E G H J K L L C J K D A B G WEITRON http://www.weitron.com.tw Min Max 3.70 3.30 , S8050 NPN General Purpose Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR 1 2 3 , http://www.weitron.com.tw - Vdc S8050 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise
Weitron
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S8050 equivalent s8050 d h br s8050 d transistor TO-92 S8050 S8050 D s8050 datasheet
Abstract: UNISO TE NIC CHNO G SCO LTD LO IE ., S8050 NPN SILICON TRANSISTOR LOW V OLT AGE H I GH CU RREN T SM ALL SI GN AL N PN T RAN SI ST OR  DESCRI PT I ON The UTC S8050 is a low , V V V MHz pF CLASSI FI CAT I ON OF h FE2 RANK RANGE C 120-200 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw D 160-300 E 280-400 2 of 4 QW-R201-013.C S8050 T Y PI , 3 E B C E B C Packing Tape Box Bulk 1 of 4 QW-R201-013.C S8050  NPN SILICON Unisonic Technologies
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S8050L- S8050G-

S8050

Abstract: S8050 TRANSISTOR =30MHz CLASSIFICATION OF H FE(1) Rank Range B C D 85-160 120-200 160-300 TYPICAL CHARACTERISTICS , S8050 TO-92 Plastic-Encapsulate Transistors Transistor(NPN) FEATURES Power dissipation o P , V CE =20 V I B =0 0.1 A Emitter cut-off current I EBO V EB =-3 0.1 A H FE(1) V CE =1 V ,I C =50mA 85 H FE(2) V CE =1V , I C =500mA 50 collector-emitter saturation , I C -COLLECTOR CURRENT(mA) V BESAT ,BASE CMITTER VOLTAGE(V) h FE ,TYPIC AL PULSED CURRENT GAIN
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S8050 TRANSISTOR transistor D S8050 S8050 TO-92 1000I s8050 transistor datasheet S8050 transistor TO-92

S8050

Abstract: .j3y 0.450 0.600 All Dimension in mm C H D 2.040 0.013 V 2 1.780 S B S Top View 1 0.500 L 3 1.110 0.370 K L 1.400 0.890 H A 1.200 G 2 Emitter 3.040 D 1 Base Max 2.800 C Collector Min A J , S8050 NPN Silicon Elektronische Bauelemente Plastic-Encapsulate Transistors RoHS Compliant , specification will not be informed individual Page 1 of 2 S8050 NPN Silicon Elektronische Bauelemente
SeCoS
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S8050 SOT-23 2S8050 S8050 npn S8050 j3y j3y transistor parameters

s8050 d h

Abstract: NPN S8550 S8050 NPN EPITAXIAL SILICON TRANSISTOR High Current Application High Collector Curre nt Ic=700mA TO- 92 High Collector P owe r Dissipa tion P c=625mW Comple mentary to S8550 ABS OLUTE , I C = 100mA VCE = 1V 85 I C = 500mA VCE = 1V 40 DC current gain h FE 160 , Output Ca pa cita nce Cob Tra nsition Fre quency fT * h F E Classification: B:85~160 , C:120~200 VCB= 10V 9.0 f =1MHz VCE = 10V IC = 50 mA 100 PF MHz , D:160~300
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NPN S8550 s8550 npn s8550 d h S8550 D S8550 equivalent D160

Transistor S8550 2TY

Abstract: sot-23 Marking 2TY Dim A E 1.25 1.35 C 1.0Typical D H C 0.43 E 0.35 0.48 1.85 1.95 H G 0.37 G J D 0.02 0.1 J K 0.1Typical 2.35 2.45 All , BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES High Collector Current.(IC= -500mA S8550 Pb Lead-free Complementary To S8050. Excellent HFE , 150 MHz hFE(1) L H 120-200 200-350 www.galaxycn.com 2 BL Galaxy Electrical
BL Galaxy Electrical
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Transistor S8550 2TY sot-23 Marking 2TY Transistor 2TY transistor s8550 SOT-23 2ty BR S8550 BL/SSSTC080

S8550

Abstract: 2s8550 : IC=0.5A MARKING: 2TY V G H 0.177 0.450 0.600 0.890 1.020 2.100 2.500 0.450 0.600 All Dimension in mm C D 0.100 0.085 V B S 2 2.040 0.013 S Top View 1 1.780 L 3 0.500 K L 1.110 0.370 H A 1.400 0.890 D Emitter 1.200 C G 2 3.040 B 1 Base Max 2.800 J Complimentary to S8050 , CLASSIFICATION OF hFE(1) L H 120-200 200-350 Rank Range Plastic-Encapsulate Transistors
SeCoS
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2s8550 marking 2ty S8050 pnp S8550 SOT-23 2TY transistor s8050 sot 23

s8050 d h

Abstract: TIC 160 D S8550 P NP EP ITAXIAL S ILICON TRANSISTOR High Current Application High Collector curre nt Ic= -700mA TO- 92 High Collector P owe r Dissipa tion P c=625mW Comple me ntary to S8050 ABS OLUTE MAXIMUM RATINGS (Ta =25 ) S ymbol Value Unit Collector-Ba s e Volta ge VCBO , h FE 160 300 Collector-e mitter s a tura tion volta ge VCE (s a t) I C =-500 mA I B , VCE =-10V * hFE Classification: B:85~160 , C:120~200 f =1MHz PF 15 100 MHz , D:160
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TIC 160 D transistor s8050 c

S8050

Abstract: ) FEATURES Pow er , L C H A R A C TER IST ICS (T a m b = 2 5 ° C u n l e s s o t h e r w i s e specified , V, lc=0 V ce= h FE , 85-160 OF hF E | f ) B 120-200 C 160-300 140 M C C Typical Characteristics S8050 IX a: D O tX o I- a tu O o JO V oe IV]. COLLECTOR-EMITTER VOLTAGE lc [mA], COLLECTOR CURRENT
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OCR Scan

s8550 npn

Abstract: NPN S8550 UNISO TE NIC CHNO G SCO LTD LO IE ., S8550 NPN SILICON TRANSISTOR LOW V OLT AGE H I GH CU RREN T SM ALL SI GN AL PN P T RAN SI ST OR  DESCRI PT I ON The UTC S8550 is a low voltage high current small signal PNP transistor, designed for Class B push-pull audio amplifier and , * Collector-Emitter voltage up to 20 V * Complementary to UTC S8050  ORDERI N G I N FORM AT I ON Order , www.unisonic.com.tw D 160-300 E 280-400 2 of 4 QW-R201-014.B S8550  PNP SILICON TRANSISTOR T
Unisonic Technologies
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S8550L- S8550G-

s8050 d h

Abstract: s8050 CIRCUIT DIAGRAM 6 R S 0 3 1 6 D IP -A /S S O P -A H T 4 6 R S 0 3 2 0 D IP -A /S S O P -A V IN 1 2 3 4 5 6 7 8 , 6 /A 3 N P A 7 /A 3 E /C N P B 0 /C P P B 1 /C N /T M R 1 P B 2 /C E H T 4 6 R S 0 3 P 1 6 D IP -B /S S O P -B H T 4 6 R S 0 3 P 2 0 D IP -B /S S O P -B Note: HT46RS03 5V LDO ¾ HT46RS03P Ö , 1 2 3 4 5 6 D E L A Y : : : M O V A ,[1 2 H ] C A L L D E L A Y C P L [1 2 H ] N O P F e tc h , ²TABRDL [m]² instruction is executed. T B L H T a b le C o n te n ts H ig h B y te S p e c ifie d b
Holtek
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s8050 CIRCUIT DIAGRAM s8050 d 128 pin diagram of ic 4052 14 pin HT46RS03/HT46RS03P HA0075E

s8050 CIRCUIT DIAGRAM

Abstract: transistor s8050 circuit diagram application 1 0 1 1 P B 2 /C E P B 0 /C P P B 3 H T 4 6 R S 0 3 1 6 D IP -A /N S O P -A /S S O P , /T M R 0 8 1 3 P B 0 /C P P A 0 /P F D 9 1 2 P B 1 /C N /T M R 1 1 0 1 1 H T 4 6 R S 0 3 2 0 D IP -A /S S O P -A P B 2 /C E P B 3 H T 4 6 R S 0 3 E 2 0 S O P -A V , 9 1 0 1 1 P B 2 /C E P B 0 /C P P B 3 H T 4 6 R S 0 3 P 2 0 D IP -B /S S O P -B H T 4 6 R S 0 3 P 1 6 D IP -B /N S O P -A /S S O P -B P B 7 1 2 4 V S S /A V S S V IN
Holtek
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transistor s8050 circuit diagram application opas change over switch s8050 equivalents Y1 S8050 s3c car 2009 100khz ultrasonic transducers HT46RS03/HT46RS03E/HT46RS03P/HT46RS03PE HT46RS03E HT46RS03PE

bq 8050

Abstract: HF S4 13003 Switching Diodes G Small Signal Schottky Diodes H BIPOLAR TRANSISTORS J FIELD EFFECT , DTC143TUA 29 DTA143ZE 30 DTC143XCA 28 D D882 26 DTA143ZUA 29 DTC143XE 30 , DTC114YCA 28 DTA123JUA 29 DTC114YE 30 ·D· http://www.galaxycn.com ALPHANUMERIC , MMBD4448W 8 FMMT591 16 MMBD452 7 MMBD6050 6 M1MA141K M H 8 MMBD6100 6 , MMST3906 20 MMBZ20VAL 48 MMST4401 20 S MMBZ27VAL 48 MMST4403 20 S8050
BL Galaxy Electrical
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bq 8050 HF S4 13003 F6 13003 bL78L05 HF 13003 bq d882 2SA1201 2SC1654 2SA1203 2SC1766 1N4148W 2SA1204

HFC0500

Abstract: S8050 equivalent V H) TLATCH 12 HFC0500 Rev. 1.01 www.MonolithicPower.com 2/18/2015 MPS Proprietary , application. For CCM at minimum input, the converter duty cycle is: D= (VO + VF ) â' N (VO + VF ) â , = D â' Ts (7) Where Ts is the frequency jitterâ'™s dominant switching period, 1 = fs 65kHz , = Pin Vin(min) Iav K (1 â' P ) â' D 2 HFC0500 Rev. 1.01 www.MonolithicPower.com 2 , 2  1 =  peak valley  + (Ipeak â' Ivalley )  â' D â' Rsense Psense 2 ï
Monolithic Power Systems
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rac 16a 400v MS-012

MDM 6600

Abstract: mt 1389 de 1.3 5 500 DO-27(DO-201) D-1 Fast Rectifier http://www.SeCoSGmbH.com Part Number , 30 1.3 5 150 SMB(DO-214AA) D-2 Fast Rectifier http://www.SeCoSGmbH.com Part
Dixie Electric
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MDM 6600 mt 1389 de 2061 D nikko AR9344 bosch AL 1115 CV denso alternator 9800-OERF-007 9800-OERF-005

secos gmbh

Abstract: SM4005A DO-41 D-1 Fast Rectifier http://www.SeCoSGmbH.com Part Number VRRM ( V ) IF (A
SeCoS
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secos gmbh SM4005A MSCD052 MSCD102 MSCD053 BL814 BL817 BL817S