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Part Manufacturer Description Datasheet BUY
0423027 Phoenix Contact Modular Terminal Block, 76A, 16mm2 visit Digikey Buy
0404033 Phoenix Contact Modular Terminal Block, 76A, 16mm2 visit Digikey Buy
3003923 Phoenix Contact Modular Terminal Block, 76A, 16mm2 visit Digikey Buy
3001381 Phoenix Contact Modular Terminal Block, 76A, 16mm2 visit Digikey Buy
1896210000 Weidmüller Interface GmbH & Co. KG Modular Terminal Block, 76A, 16mm2 visit Digikey Buy
3001433 Phoenix Contact Modular Terminal Block, 76A, 16mm2 visit Digikey Buy

s6 76A

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: wall thickness max. 7.6â'‰mm insulated  straight  10000â'‰Insertionsâ'' Housing Style , 4 3 2 F 1 Ø 7.8 S 14.7 18.8 Diagrams   S6 F6 S4 F4 S2 F2 F1 S1 SCHURTER
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Abstract: terminal Screw-on mounting wall thickness max. 7.6â'‰mm insulated  straight  10000â , 24.2 6 5 4 3 2 1 F Ø 7.8 S 14.7 18.8 Diagrams   S6 F6 S4 F4 SCHURTER
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Abstract: terminal Screw-on mounting wall thickness max. 7.6â'‰mm insulated  straight  10000â , 24.2 6 5 4 3 2 F 1 Ø 7.8 S 14.7 18.8 Diagrams   S6 F6 S4 F4 SCHURTER
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Abstract: terminal Screw-on mounting wall thickness max. 7.6â'‰mm insulated  straight  10000â , 24.2 6 5 4 3 2 F 1 Ø 7.8 S 14.7 18.8 Diagrams   S6 F6 S4 F4 SCHURTER
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Abstract: wall thickness max. 7.6â'¯mm insulated  straight  10000â'¯Insertionsâ'' Housing Style , 4 3 2 F 1 Ø 7.8 S 14.7 18.8 Diagrams   S6 F6 S4 F4 S2 F2 F1 S1 SCHURTER
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Abstract: wall thickness max. 7.6â'‰mm insulated  straight  10000â'‰Insertionsâ'' Housing Style , 4 3 2 F 1 Ø 7.8 S 14.7 18.8 Diagrams   S6 F6 S4 F4 S2 F2 F1 S1 SCHURTER
Original
Abstract: wall thickness max. 7.6â'‰mm insulated  straight  10000â'‰Insertionsâ'' Housing Style , 4 3 2 F 1 Ø 7.8 S 14.7 18.8 Diagrams   S6 F6 S4 F4 S2 F2 F1 S1 SCHURTER
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Abstract: APT30M40LVR A dvanced P o w er Te c h n o l o g y ® 300V 76A 0.040Ã1 POWER MOSV Power MOS Vâ"¢ is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS Vâ , 25£1, P eak l|_ = 76A Pulse Test: Pulse w idth < 380 (J.S, Duty C ycle < 2% 050-5541 Rev A APT , , JUNCTION-TO-CASE vs PULSE DURATION UNIT °c/w APT30M40LVR 150 â VG S=6 5V, '?V, 10V 8 15 \ f C 0 -
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DIODE S6 76A

Abstract: s6 76A HSU285 Silicon Schottky Barrier Diode for Detector REJ03G0009-0200 Rev.2.00 May 17, 2006 Features · Low forward voltage, Low capacitance and High detection sensitivity. · Ultra small Resin Package (URP) is suitable for surface mount design. Ordering Information Type No. HSU285 Laser Mark S6 Package Name URP Pin Arrangement Cathode mark Mark 1 S6 2 1. Cathode 2 , Name URP JEITA Package Code SC-76A RENESAS Code PTSP0002ZA-A Previous Code URP / URPV
Renesas Technology
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DIODE S6 76A s6 76A
Abstract: )# à¸'$ ,-#29;#14; à¸'3@6à¸'$#31;,#29;#14;#14; *# à¸', class="hl">76à¸';@8AC?3E;A@ +# à¸',77à¸'8;9FC7à¸' #15;à¸'8ACà¸'?AC7à¸'67E3;>76à¸';@8AC?3E;A@ +7G à¸' B397à¸' #14; #21; #19; , #24;#15; à¸'#26; J s6 ,# à¸'# à¸' #17;à¸'?à¸'7BAIJà¸')#28;#27;à¸' Infineon Technologies
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355AC6 E3C97E E7DE76 DAFC57
Abstract: )# à¸'$ ,-#29;#14; à¸'3@6à¸'$#31;,#29;#14;#14; *# à¸', class="hl">76à¸';@8AC?3E;A@ +# à¸',77à¸'8;9FC7à¸' #15;à¸'8ACà¸'?AC7à¸'67E3;>76à¸';@8AC?3E;A@ +7G à¸' à¸' B397à¸' #14; #21; , #24;#15; à¸'#26; J s6 ,# à¸'# à¸' #17;à¸'?à¸'7BAIJà¸')#28;#27;à¸' Infineon Technologies
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Abstract: : 50Hz Half Sine Waveform at Tf=76°C Note 4 : Vd = 3000V, I(jm = 25A Note 5 : Ambient Temperature of , , C s-6/^F, V dSPâ'"1200V, Tj = 125°C, L s^0.2^H DC â'" â'" â'" V â'" A 1.5 -
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SG4000GXH29G 13-120M1A

ADG508F

Abstract: ADG528FT .900 mW 8ja, Thermal Impedance.76°C/W Lead Temperature, Soldering (10 sec , (Not to Scale) 3 7]d ïS]hs TT] ai 16 j a2 is]gno Ì3Vdo 7a]ss k]S6 ÏTj S7 îô] se WR [T AO [7 EN [7 , ADG508F TOP VIEW (Not to Scale) ÃÃ"] GND ll]vi» TeJ Nc is] S5 Ta] S6 HMHMÃT s ° s ! Ì IU < z < o , is] s5 14] s6 LilHLüNLüJ ïî]hs i?] a1 îè]gnd en [7 î3v00 Vss [7 »] sib s1a [7 ïà]s2b s2a
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ADG509F ADG528F ADG528FT ADG508F/ADG509F/ADG528F/ADG529F MAX358/MAX359 DG458/DG459 ADG529F

SC-76A

Abstract: HSU285 (URP) is suitable for surface mount design. Ordering Information Type No. HSU285 Laser Mark S6 Package Name URP Pin Arrangement Cathode mark Mark 1 S6 2 1. Cathode 2. Anode Rev , Code SC-76A RENESAS Code PTSP0002ZA-A Previous Code URP / URPV MASS[Typ.] 0.004g D b
Renesas Technology
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SC-76A
Abstract: HSU285 Silicon Schottky Barrier Diode for Detector REJ03G0009-0200 Rev.2.00 May 17, 2006 Features · Low forward voltage, Low capacitance and High detection sensitivity. · Ultra small Resin Package (URP) is suitable for surface mount design. Ordering Information Type No. HSU285 Laser Mark S6 Package Name URP Package Code PTSP0002ZA-A Pin Arrangement Cathode mark Mark 1 S6 2 1. Cathode 2 , Name URP JEITA Package Code SC-76A RENESAS Code PTSP0002ZA-A Previous Code URP / URPV MASS[Typ.] 0.004g Renesas Technology
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IPMT5.0AT3

Abstract: r924 3.3V AT 7.6A CLOAD (3VOUT) + R3 10 3VIN ADDRIN SCL SDA PRSNT2# PRSNT1# 3VSENSE GATE , ADDR 3 ADDR 2 ADDR 1 8 9 1 2 3 4 5 6 7 8 9 ACK S7 S6 , the PRSNT2# Pin FAULTCODE0 FAULTCODE1 FAULT Supply Causing Fault S6 Logic State of
Linear Technology
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LTC4240 IPMT5.0AT3 r924 MMBT2222A MMBT3906 Si7880DP LTC3425
Abstract: 1000 200 tc = 85°C tc = 76°C t = 10 ms, tv = 45°C | t = 1 0 ms, tV = tv mx J , a t = 10 ms , ,2yl -Sehrou btn M 5 x * 3 0 OtN 6 4 - S.6 . i m1 *' V 'iji" V 50 M 19 Für Bauelemente -
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3403ER7 1078F 34G3217 00Q05

hr460

Abstract: 2SK829 -E (O 155)22-â füj a (022) 26 I -S «(0177)76-A p (O I 78) 46-S I3J(0I96)5I-EB (O 188) 63-lil ffà , 32 I I £ íb £ je » s6 » £ £ tí F £ » £ a £ t> B £ » ?S Oj .» K » ;x a m Â
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2SK829 hr460 transistor 115 25e diode AR S1 86 s0245 TC-6276 S2-05 22-WK

FD1793

Abstract: FD1791 ) Data Register (DR) Enabled *: Don't care MB8Ã"76A/MB8877A BLOCK DIAGRAM DAL0 ~ DAL7*/ OAL0 ~ OAL7 , and logically 'ored' with MR. S6 Protected When set, indicates Write Protect is activated. This bit , drive is ready. S6 Write Protect On Read Record: Not Used. On Read Track: Not Used. On any Write: It , Manufacturer MB8Ã"76A / MBÃ"877A IBM 3740 Format This single-density (FM) format utilizes 128 bytes/ sector
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MB8876A MB8877A IBM3740 MB8867A FD1793 FD1791 FD1793-02 8876A IBM-3740 western digital FD1791 MB8876A/MB8877A 40-LEAD
Abstract: &76$ ìí , +'/&ý& ý WUDQVLWLRQýRIýQ&76à Samsung Electronics
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SNDS100 MAX232
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