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WM8255SEFL/R Cirrus Logic IC 12MSPS 16 BIT AFE WITH LED DR visit Digikey
WM8255SEFL Cirrus Logic IC 12MSPS 16 BIT AFE WITH LED DR visit Digikey
CDB4352 Cirrus Logic Evaluation, Design Tools Eval Bd 192kHz DAC w/LD visit Digikey
MBRF10200CT-JT Diodes Incorporated DIODE SCHOTTKY 5A ITO220AB visit Digikey
B2100A-13-F Diodes Incorporated DIODE SCHOTTKY 2.0A 100V visit Digikey
ZLLS400QTC Diodes Incorporated DIODE SCHOTTKY 40V SOD323 visit Digikey

s31 schottky diode

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: BL Galaxy Electrical Production specification Surface mounting schottky Diode 1SS357 FEATURES Pb Small Surface Mounting Type: Lead-free SOD-323 Low VF Low IR APPLICATIONS Surface mount schottky diode SOD-323 ORDERING INFORMATION Type No. Marking 1SS357 S31 MAXIMUM RATING @ Ta=25 Package Code SOD-323 unless otherwise specified Parameter Symbol , specification Surface mounting schottky Diode 1SS357 PACKAGE OUTLINE Plastic surface mounted package BL Galaxy Electrical
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SOD323 Package footprint marking A SOD323 diode SOD-323 BL GALAXY diode SOD-323 1SS357 SOD-323 sod323 BL/SSSKB004 3000/T
Abstract: 1SS357 Surface Mounting Schottky Diode SOD-323 Features Small Surface Mounting Type: SOD-323 Low VF Low IR Applications Surface mount schottky diode Dimensions in inches and (millimeters) Ordering Information Type No. 1SS357 Marking S31 Package Code SOD-323 MAXIMUM RATING @ Ta=25 Parameter Non-Repetitive Peak reverse voltage DC Reverse Voltage Peak forward Current Average Rectified Output Current Junction temperature Storage temperature unless otherwise specified Symbol VRM -
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schottky 1ss357 sod323 marking NO
Abstract: ® 1SS357 SURFACE MOUNT SCHOTTKY BARRIER DIODE WON-TOP ELECTRONICS Pb Features  Low Turn-On Voltage   Fast Switching Speed PN Junction Guard Ring for Transient and ESD , : Cathode Band Weight: 0.004 grams (approx.) Marking: S31 Lead Free: For RoHS / Lead Free Version, Add , Curve 0 Unit 0.28 0.36 0.54 CD 250 25 Max. IR Diode Capacitance (VR = 0V, f , MARKING INFORMATION RECOMMENDED FOOTPRINT 0.025 (0.63) S31 Cathode S31 0.033 (0.83) = Won-Top Electronics
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MIL-STD-202 1SS357-T1 1SS357-T1-LF
Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diode 1SS357 Schottky Diodes FEATURES Small Package Low VF, low IR MAKING: S31 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25 Parameter Symbol Limits Unit Peak reverse voltage VRM 45 V DC reverse voltage VR 40 V Mean rectifying current IO 0.1 A IFSM 1 A Junction temperature Tj 125 Storage temperature Tstg -55 Jiangsu Changjiang Electronics Technology
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Abstract: ! S T P S 1 5 4 5 C M _ POWER SCHOTTKY , copper tab DESCRIPTION Dual schottky rectifier suited for switchmode power supply and high frequency , connected Tc = 130°C Per diode Per diode Per device tp = 10ms Sinusoidal All pins connected tp = 2 us F = 1KHz Per diode Value 45 17 7.5 15 150 Unit V A A If s m A Ir r m Repetitive Peak Reverse Current Per diode 1 A Tstg Tj dV/dt Storage and Junction Temperature Range - 65 -
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STPS1545CM diode smd ED 17 diode smd ED 35 S0-10TM PSO-10 SO-10
Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diode 1SS357 Schottky Diodes SOD-323 + FEATURES Small Package Low VF, low IR MAKING: S31 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25â"ƒ Parameter Symbol Limits Unit Peak reverse voltage VRM 45 V DC reverse voltage VR 40 V Mean rectifying current IO 0.1 A IFSM 1 A Junction temperature Tj 125 â"ƒ Storage Jiangsu Changjiang Electronics Technology
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ISS357
Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diode 1SS357 Schottky Diodes SOD-323 FEATURES Small Package Low VF, low IR MAKING: S31 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25â"ƒ Parameter Symbol Limits Unit Peak reverse voltage VRM 45 V DC reverse voltage VR 40 V Mean rectifying current IO 0.1 A IFSM 1 A Junction temperature Tj 125 â"ƒ Storage temperature Tstg Jiangsu Changjiang Electronics Technology
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Abstract: 1SS357 Surface Mount Schottky Barrier Diode SCHOTTKY BARRIER P b Lead(Pb)-Free 100m AMPERES Features: * Low Forward Voltage : VF = 0.28(Typ.) @ IF = 1mA * Low Reverse Current : IR = 5uA(Max.) * Small outline Surface mount SOD-323 Package 40 VOLTS 1 Mechanical Data: * Terminals : Solderable Per MIL-STD-202 Method 208 * Polarity : See Equivalent Circuit Diagram. * Weight : 0.004 grams , 0.28 0.36 V 0.6 Device Marking & Equivalent Circuit diagram Item Marking 1SS357 S31 Weitron
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free download IR circuit diagram
Abstract: 1SS357 Surface Mount Schottky Barrier Diode SCHOTTKY BARRIER P b Lead(Pb)-Free 100m AMPERES Features: * Low Forward Voltage : VF = 0.28(Typ.) @ IF = 1mA * Low Reverse Current : IR = 5uA(Max.) * Small outline Surface mount SOD-323 Package 40 VOLTS Mechanical Data: * Terminals : Solderable Per MIL-STD-202 Method 208 * Polarity : See Equivalent Circuit Diagram. * Weight : 0.004 grams , 0.28 0.36 V 0.6 Device Marking & Equivalent Circuit diagram Item Marking 1SS357 S31 Weitron
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Abstract: 1SS357 Schottky Diodes FEATURES Small Package Low VF, low IR MAKING: S31 Maximum Ratings and Electrical Characteristics, Single Diode @T A=25 Parameter Symbol Limits Unit Peak reverse voltage VRM 45 V DC reverse voltage VR 40 V Mean rectifying current IO 0.1 A IFSM 1 A Junction temperature Tj 125 Storage temperature Tstg -55~+125 Peak forward surge current Electrical Ratings @TA=25 Parameter Transys Electronics
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diode ct-25
Abstract: 1SS357 SCHOTTKY DIODES SOD-323 FEATURES 1.35(0.053) 1.15(0.045) Small package Low VF, low IR 1.26(.050) 1.24(.048) 2.70(0.106) 2.70(0.106) 1.80(0.071) 2.30(0.091) 2.30(0.091) 1.60(0.063) 1.80(0.071) 1.60(0.063) MECHANICAL DATA 0.4(0.016) .25(0.010) .177(.007 , -750, Method 2026 Polarity: Polarity symbols marked on case Marking: S31 MIN Dimensions in millimeters , characteristics, Single diode @TA=25C PARAMETER Peak reverse voltage DC reverse voltage Mean rectifying Shunye
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MIL-STD-750
Abstract: not utilize the Schottky effect. Package Outline Mît» S31 tu Siiâ'" t- Miff er l»c» u' , . CTB=20log (dB) Focus point aojustmBnt Power APC Supply circuit LASER DIODE X = 780nm Y axis -
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PHD016 sony pickup sony pick-up E82144-5T 002DD32 00BD033 PHD01B
Abstract: £â'¢< K/Diodes J [ â'" K i^p p + S ^p p â'"R i l / L i s t of Diode E quivalent Products , ±, c?i'â'ž The characteristics of the equivalent products do not always agree with those of the diode , 29 S31 I .o A0Y L1 A0 Z L1 1 13 U9 S84 0E T RG U1 S27 DAA 5 7 B S1 1 S56 56B , £ 'f ^ â'" K /Schottky Barrier Diodes M a A p) . V(V l0(m) V(Vx K 2 r) 4 0 1 05 .5 MR S , 0 7 1 S2 M7 4 K S070C .3 S31 A0 W B W 0 3 ItyfT-y 1324 *2 T E0 K3 E0 K4 E1 K3 E1 -
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DIODE S4 29
Abstract: connecting Pin 7 to ground, if a Schottky diode is connected between Pin 1 (cathode) and Pin 7 (anode), the , . Power-Down: The VCO can be disabled by connecting Pin 8 to ground. If a Schottky diode is connected between , VCO amplitude regardless of the Q-factor (>10) of the resonator and varactor diode. However, the real , - 39.811 11 -22.93 a S.31 pF Figure 2. LNA Input and Output Match (at Device Pin) 711002b 00ô3LiT0 »HM -
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SA620 800-1200MHZ LNA Mixer VCO 2.4 GHz lna vco mixer 2GHz VCO 1.5 GHz SA7025 SA620DK 900MH
Abstract: WILLAS 3.0A SUFRACE MOUNT SUPER FAST RECTIFIERS - 50-600V 1.0A SURFACE MOUNT SCHOTTKY BARRIER , RRM T J = 125 OC Typical Diode Thermal Resistance (Note 2) JAapplied 4V DC reverse voltage 45 C J , SUPER FAST RECTIFIERS - 50-600V 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SMC-L PACKAGE , MOUNT SUPER FAST RECTIFIERS - 50-600V 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SMC-L , . Type number Method 2026 S31 S32 SFM34L-TH S34 MAXIMUM SFM36 L-THRATINGS AND ELECTRICAL S36 Willas Electronic
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s34 schottky diode s32 schottky diode SOD123 S32 SSOD-123 FM120-M FM1200-M MIL-STD-19500 UL94-V0
Abstract: the high speed operation similar to equivalent Bipolar Schottky TTL while m aintaining the CMOS low , c + 0.5 (N ote 2) Input Diode Current l|K -2 0 O u tp u t Diode Current l0K Â , : V|N = 3.4V OTHER INPUT : Vcc o r GND V out = 5.5V 1997 - 01-30 ^ 7240 DD3D1B5 S31 -
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GG3Q TC74VHCT138AF/AFN/AFT TC74VHCT138AF TC74VHCT138AFN TC74VHCT138AFT TC74VHCT138 6-P-300-1
Abstract: proportion to the on-time period (ton) of LxTr. Step.2 I When LxTr is turned OFF, Schottky diode (SD) is , (SUMIDA ELECTRIC CD105) Schottky Diode (HITACHI HRP22) 220 ¡i F(Aluminum electrolytic Type) 220 n Cb , ) made by Sumida Electric Co., Ltd. Diode : MA721 (Schottky type) made by Matsushita Electronics , COUT Examples of Components L D Cin CVDO cout 777" A7/1 H(SUMIDA ELECTRIC CD105) Schottky Diode , ) cd 0.01 n F D :Schottky Diode (HITACHI HRP22) NPN Tr 2SD1628 cln :220// F(Aluminum electrolytic -
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RS5RM3624A diode schottky 40v 30ma RS5RM5045A RS5RM5045A-T1 0D02720
Abstract: . Step.2 ! W hen LxTr is tu rn e d O FF, Schottky diode (SD) is tu rn e d ON in o rder th a t L m ain , CD105) Cb 1000pF D Schottky Diode (HITACHI HRP22) C vdd 220 // F(Aluminum electronic , ELECTRIC CD105) CD :0.01 ,t F D :Schottky Diode (HITACHI HRP22) Cbe :0.1 ,i F(RS5RM 5045X , ) â AT/I H(SUMIDA ELECTRIC CD105) CD 0 .0 1 , F :Schottky Diode (HITACHI HRP22) NPN Tr , inductor with an appropriate inductance. â'¢ Use a diode of a Schottky type with high switching speed, and -
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Abstract: broadest product range in SOT-89, SOT-143, and MELF diode packages. â  Our Surface Mount devices, as , Purpose/ Switching Bandswitch Variable Capacitance Schottky Rectifier Voltage Reference Zeners , B C 858C 118 B C 859A B C859B 121 121 B A S29 B A S31 B A S32L B A S35 118 118 -
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SP126 EIA-RS481A IEC286-3 T2222A T2369 T2907 Z5242B
Abstract: -41-91 TOSHIBA (LASER/FBR OPTIC) TDD T> B ^0^7252 001b054 S31 BSTOSb TOHL50 -â'"- 1.3 Reliability Table 1.4 , Schottky TTL, LS-TTL, and Standard TTL. Use of Schottky TTL is therefore recommended for TOTX50, but use of , 4.1). Table 4.1 TTL Interfaces of TOTX50/TORX50 \ttl to be connected Item \ Standard TTL Schottky , connection is wrong, with the Vcc and GND reversed for example, the diode is biased to forward direction to -
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T-41-91 8251AP FIBER OPTIC toslink transmitter tmp8251ap GI 8226 diode TA78005AP tmp8251
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