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LM3900J Texas Instruments QUAD OP-AMP, 2.5MHz BAND WIDTH, CDIP14 visit Texas Instruments
TLV2774Y Texas Instruments QUAD OP-AMP, 4.8MHz BAND WIDTH, UUC14 visit Texas Instruments
TLV2442Y Texas Instruments DUAL OP-AMP, 1.81MHz BAND WIDTH, UUC8 visit Texas Instruments
TLV2771Y Texas Instruments OP-AMP, 4.8MHz BAND WIDTH, UUC8 visit Texas Instruments
TLV2773Y Texas Instruments DUAL OP-AMP, 4.8MHz BAND WIDTH, UUC14 visit Texas Instruments
VCA610UA-TR Texas Instruments OP-AMP, 25MHz BAND WIDTH, PDSO8 visit Texas Instruments

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s band

Catalog Datasheet MFG & Type PDF Document Tags
Abstract:   Excellent l/f noise CW burn out 300mW â  Low conversion loss â  S band operation , E Frequency S Band S Band S Band S Band S Band S Band S Band Forward , GE C P L E S S E Y S F M I C O N D U C T O K S DC1508/11/19 SILICON SCHOTTKY S-BAND MICROSTRIP LID MIXER DIODES DESCRIPTION APPLICATIONS This general purpose diode available in the microstrip package is suitable for applications requiring high performance mixers. These diodes can be -
OCR Scan
DC1508 DC1511 DC1519
Abstract:   Low conversion loss CW burn out 150mW FEATURES â  S band operation TYPICAL DC CHARACTERSITICS Tamb 25'C TYPE NUMBER DC1570 DC1572 Frequency E S Band F S Band G S Band E S Band F S Band G S Band Forward Voltage (Vf) @ 100|iA 200mV 200mV 200mV , 37bñS22 ÃGläMäT 3Tà « P L S B 3ü GEC P L E S S E Y S E M I C O N D U C T O R S DC1570/72 SILICON SCHOTTKY S-BAND WAVEGUIDE LOW DRIVE MIXER DIODES DESCRIPTION APPLICATIONS The -
OCR Scan
Abstract:   Low conversion loss â  S band operation T Y P IC A L DC C H A R A C TE R S ITIC S LIM , DC1519 DC1511 E G E F G E Frequency S Band S Band S Band S Band S Band S Band S Band Forward Voltage (Vf) @ IOOjiA 350mV 350mV 350mV 350mV 350mV , 37bflS22 GGlflHbH Tifi « P L S B GEC PLE SSEY SEMICONDUCTORS DC1508/11/19 SILICON SCHOTTKY S-BAND MICROSTRIP LID MIXER DIODES DES C R IPTIO N APP LIC A TIO N S This general purpose diode -
OCR Scan
1801F
Abstract: cycle 0.01%) 300mW CW bum out 150mW S band operation TYPICAL DC CHARACTERSITICS Tamb 25â'˜ C DC1571 TYPE NUMBER DC1573 E S Band F S Band G S Band E S Band F S Band G S Band Forward Voltage (Vf) @ 100pA 200mV 200mV 200mV 200mV 200mV 200mV , GEC PL ES S E Y S } M I ( l> N I) I 1 C 1 O K S DC1571/73 SILICON SCHOTTKY S-BAND MICROSTRIP LOW DRIVE MIXER DIODES DESCRIPTION APPLICATIONS The DC1570 series are medium barrier height -
OCR Scan
Abstract: S band operation TYPICAL DC CHARACTERSITICS T am b 2 5 'C TYPE NUMBER DC1572 DC1570 E S Band F S Band G S Band E S Band F S Band G S Band Forward Voltage (Vf) @ 100(iA , P S tffli GEC PLES S EY DC1570/72 SILICON SCHOTTKY S-BAND WAVEGUIDE LOW DRIVE MIXER DIODES DESCRIPTION APPLICATIONS The DC1570 series are medium barrier height silicon mixer diodes Intended primarily for operation as low drive mixer diodes in systems where available local oscillator power is -
OCR Scan

CER0702C

Abstract: Low Band Response (S21) Pas s band Ilos s Pas s band Ripple Pas s band Return Los s @ Ant Pas s band Return Los s @ Port 3 Attenuation Low Band Response (S13) Pas s band Ilos s Pas s band Ripple Pas s band Return Los s @ Ant Pas s band Return Los s @ Port 2 Attenuation Isolation (S23) Rejection @ Low Band Rejection @ High Band Average Power Peak Power Frequency MHz Typical @ 25ºC , watts average power in 5 MHz steps across the band. 12 steps total with a 100 millisecond pulse at each
CTS
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CER0702C
Abstract: Operating temperature Low drive LO level â  LIMITING CONDITIONS 150mW S band operation TYPICAL DC CHARACTERSITICS Tamb 25â'™C TYPE NUMBER DC1571 DC1573 E S Band F S Band G S Band E S Band F S Band G S Band Forward Voltage (Vf) @ 100(iA 200mV 200mV , 37bñS2B OOlflMfl? SIS « P L S B 5Ã' GECPLESSEY S E M I C O N D U C T O R S DC1571/73 SILICON SCHOTTKY S-BAND MICROSTRIP LOW DRIVE MIXER DIODES DESCRIPTION APPLICATIONS The DC1570 -
OCR Scan
Abstract: < High-power GaAs FET (small signal gain stage) > MGF0805A L & S BAND / 4.5W SMD non - matched , /S band power amplifiers QUALITY ï'· GG Packaging ï'· Tape & Reel (1000 pcs) RECOMMENDED , FET (small signal gain stage) > MGF0805A L & S BAND / 4.5W SMD non - matched MGF0805A OUTLINE DRAWING < High-power GaAs FET (small signal gain stage) > MGF0805A L & S BAND / 4.5W SMD non - , signal gain stage) > MGF0805A L & S BAND / 4.5W SMD non - matched MGF0805A Example of Circuit Mitsubishi
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MGF0805A

Abstract: s band < High-power GaAs FET (small signal gain stage) > MGF0805A L & S BAND / 4.5W SMD non - matched , .) Hermetic package Designed for use in Class AB linear amplifiers APPLICATION L/S band power amplifiers , ) > MGF0805A L & S BAND / 4.5W SMD non - matched MGF0805A OUTLINE DRAWING Publication Date : Apr., 2011 2 < High-power GaAs FET (small signal gain stage) > MGF0805A L & S BAND / 4.5W SMD non - , < High-power GaAs FET (small signal gain stage) > MGF0805A L & S BAND / 4.5W SMD non - matched MGF0805A
Mitsubishi
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s band MITSUBISHI example
Abstract: < High-power GaAs FET (small signal gain stage) > MGF0951P L & S BAND / 1.2W SMD / Plastic , for use L/S band amplifiers. FEATURES ï'· High output power Po=31dBm(TYP.) @f=2.15GHz,Pin , .) @f=2.15GHz,Pin=20dBm ï'· Plastic Mold Lead â'" less Package APPLICATION ï'· For L/S Band power , < High-power GaAs FET (small signal gain stage) > MGF0951P L & S BAND / 1.2W SMD / Plastic Mold non - , ) > MGF0951P L & S BAND / 1.2W SMD / Plastic Mold non - matched MGF09151P TYPICAL CHARACTERISTICS Mitsubishi
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s band

Abstract: < High-power GaAs FET (small signal gain stage) > MGF0952P L & S BAND / 4.5W SMD / Plastic Mold , use L/S band amplifiers. FEATURES High output power Po=36.5dBm(TYP.) @f=2.15GHz,Pin=25dBm High , =25dBm Plastic Mold Lead ­ less Package APPLICATION For L/S Band power amplifiers QUALITY GG Fig , . Publication Date : Apr., 2011 1 < High-power GaAs FET (small signal gain stage) > MGF0952P L & S BAND , ., 2011 2 < High-power GaAs FET (small signal gain stage) > MGF0952P L & S BAND / 4.5W SMD
Mitsubishi
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12W SMD

Abstract: < High-power GaAs FET (small signal gain stage) > MGF0951P L & S BAND / 1.2W SMD / Plastic Mold , use L/S band amplifiers. FEATURES High output power Po=31dBm(TYP.) @f=2.15GHz,Pin=20dBm High , =20dBm Plastic Mold Lead ­ less Package APPLICATION For L/S Band power amplifiers QUALITY GG Fig , gain stage) > MGF0951P L & S BAND / 1.2W SMD / Plastic Mold non - matched MGF09151P TYPICAL , ) > MGF0951P L & S BAND / 1.2W SMD / Plastic Mold non - matched MGF09151P TYPICAL CHARACTERISTICS
Mitsubishi
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12W SMD
Abstract: < High-power GaAs FET (small signal gain stage) > MGF0952P L & S BAND / 4.5W SMD / Plastic , for use L/S band amplifiers. FEATURES ï'· High output power Po=36.5dBm(TYP.) @f=2.15GHz,Pin , .) @f=2.15GHz,Pin=25dBm ï'· Plastic Mold Lead â'" less Package APPLICATION ï'· For L/S Band power , ) > MGF0952P L & S BAND / 4.5W SMD / Plastic Mold non - matched MGF09152P TYPICAL CHARACTERISTICS < High-power GaAs FET (small signal gain stage) > MGF0952P L & S BAND / 4.5W SMD / Plastic Mold non - Mitsubishi
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Abstract: < L/S band internally matched power GaAs FET > MGFS52BN2122A 2.1 â'" 2.2 GHz BAND / 160W , :Channel-case 1 < L/S band internally matched power GaAs FET > MGFS52BN2122A 2.1 â'" 2.2 GHz BAND , -tone) f=2.14GHz f=2.17GHz < L/S band internally matched power GaAs FET > MGFS52BN2122A 2.1 â , /S band internally matched power GaAs FET > MGFS52BN2122A 2.1 â'" 2.2 GHz BAND / 160W IM3 , Condition : Vds=12V,Idq=2A,Ta=25deg.C f=2.14GHz f=2.17GHz < L/S band internally matched power GaAs Mitsubishi
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cyntec TBF

Abstract: cyntec filter TBF 2520 ­ 245 ­ S ­ XX (1) (2) (3) (4) (5) Where (1) TBF: Thin Film Band Pass Filter (2) Size , : The Engineering Spec. for TBF2520-245-S Band Pass Filter MHz dB MHz dB MHz dB 900 , SCALE X UNIT X TITLE : The Engineering Spec. for TBF2520-245-S Band Pass Filter CYNTEC CO , . for TBF2520-245-S Band Pass Filter GND (2) UNLESS OTHERWISE SPECIFIED RELEASED BY Jan. 30 , TBF2520-245-S Band Pass Filter CYNTEC CO., LTD. THIS DRAWINGS AND SPECIFICATIONS ARE THE PROPERTY OF
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cyntec TBF cyntec filter TBF2520-245 TBF2520-245-S CYNP-BP-253 2450MH
Abstract: good temperature stability CW burn out 250mW â  Very high pulse burn out â  S band , S Band S Band S Band Forward Voltage (Vf) @ lOOgA 350mV 350mV 350mV Reverse , 37bñS52 ODiaHb^ 5TT « P L S B GEC P LE S S E Y SEMICONDUCTORS DC1509/13/17 SILICON SCHOTTKY S-BAND MICROSTRIP LID DETECTOR DIODES DESCRIPTION APPLICATIONS This general purpose diode available in the microstrip package is suitable for applications requiring high performance mixers. These -
OCR Scan
DC1509 DC1513 DC1517
Abstract: â  Very high pulse burn out â  S band operation TYPICAL DC CHARACTERSITICS Tamb 25'C TYPE NUMBER DC1509 DCT513 DC1517 Frequency S Band S Band S Band Forward Voltage , P^pjl GE C P L E S S E Y DC1509/13/17 SILICON SCHOTTKY S-BAND MICROSTRIP LID DETECTOR DIODES DESCRIPTION APPLICATIONS This general purpose diode available in the microstrip package is suitable for applications requiring high performance mixers. These diodes can be supplied in matched pairs by the -
OCR Scan

CHA5082

Abstract: s band CHA5082 S Band Power Amplifier GaAs Monolithic Microwave IC Description The CHA5082 is a S , )1 69 33 03 09 S Band Power Amplifier CHA5082 Electrical Characteristics Tamb = +25°C , S Band Power Amplifier CHA5082 Chip Mechanical Data Dimension : Thickness : Ref , change without notice S Band Power Amplifier CHA5082 Ordering Information Chip form : CHA5082 , Specifications subject to change without notice S Band Power Amplifier CHA5082 use as critical
United Monolithic Semiconductors
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DSCHA50826354 CHA5082-99F/00
Abstract: < High-power GaAs FET (small signal gain stage) > MGF0953P L & S BAND / 0.6W SMD / Plastic , for use L/S band amplifiers. FEATURES ï'· High output power Po=28.0dBm(TYP.) @f=2.15GHz,Pin , .) @f=2.15GHz,Pin=10dBm ï'· Plastic Mold Lead â'" less Package APPLICATION ï'· For L/S Band power , stage) > MGF0953P L & S BAND / 0.6W SMD / Plastic Mold non - matched MGF09153P TYPICAL CHARACTERISTICS < High-power GaAs FET (small signal gain stage) > MGF0953P L & S BAND / 0.6W SMD / Plastic Mitsubishi
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JDSU coupler

Abstract: COMMUNICATIONS COMPONENTS Fused Coupler, Low Loss, C+L or S Band Key Features · Ultra low , , low loss, C+L or S band enables the accurate splitting and monitoring of optical signals in , Loss (dB) Tap Insertion Loss (dB) Tap Insertion Loss FUSED COUPLER, LOW LOSS, C+L OR S BAND , ). FUSED COUPLER, LOW LOSS, C+L OR S BAND 4 Housing Option Housing Code 1 2 3 4 5 6 , nm Minimum Maximum Maximum 55 dB 5N 4W -40 to 75 °C -40 to 85 °C Telcordia GR-1221 S band 1425 to
JDS Uniphase
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JDSU coupler 498-JDSU 5378-JDSU 800-5378-JDSU FFC-SK31PB110 SMF-282 E2000
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