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Part : RJP30E2DPK-M0#T0 Supplier : Renesas Electronics Manufacturer : Rochester Electronics Stock : 6,515 Best Price : $5.05 Price Each : $5.05
Part : RJP30E2DPP-M0#T2 Supplier : Renesas Electronics Manufacturer : Rochester Electronics Stock : 19,361 Best Price : $1.23 Price Each : $1.23
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rjp30e2

Catalog Datasheet MFG & Type PDF Document Tags

rjp30e2

Abstract: rjp30e2dpk Preliminary Datasheet RJP30E2DPK-M0 Silicon N Channel IGBT High Speed Power Switching Features , 12, 2011 Page 1 of 6 RJP30E2DPK-M0 Preliminary Electrical Characteristics (Ta = 25 , .1.00 Apr 12, 2011 Page 2 of 6 RJP30E2DPK-M0 Preliminary Main Characteristics Maximum Safe , .1.00 Apr 12, 2011 Page 3 of 6 RJP30E2DPK-M0 Typical Capacitance vs. Colloctor to Emitter Voltage , 4 of 6 RJP30E2DPK-M0 Normalized Transient Thermal Impedance vs. Pulse Width 10 3 1 0.3 0.1
Renesas Electronics
Original
PRSS0004ZH-A rjp30e2 rjp30e2dpk RJP30e Rjp30 APR12 rjp-30e2 R07DS0348EJ0100

RJP63k2

Abstract: rjp63f3 Preliminary Datasheet RJP30E2DPP-M0 Silicon N Channel IGBT High Speed Power Switching Features , of 6 RJP30E2DPP-M0 Preliminary Electrical Characteristics (Ta = 25°C) Item Zero gate , Page 2 of 6 RJP30E2DPP-M0 Preliminary Main Characteristics Maximum Safe Operation Area 1000 , .2.00 Apr 12, 2011 Page 3 of 6 RJP30E2DPP-M0 Typical Capacitance vs. Colloctor to Emitter Voltage , 4 of 6 RJP30E2DPP-M0 Normalized Transient Thermal Impedance vs. Pulse Width 10 3 1 0.3 0.1
Renesas Technology
Original
RJP63k2 rjp63f3 RJP30H2 RJJ0319DSP rjp63f rjj0319 R07CS0003EJ0100

rjp30e2

Abstract: rjp30e2dpp Preliminary Datasheet RJP30E2DPK-M0 Silicon N Channel IGBT High Speed Power Switching , , 2011 Page 1 of 6 RJP30E2DPK-M0 Preliminary Electrical Characteristics (Ta = 25°C) Item , © Notes: 3. Pulse test. R07DS0348EJ0100 Rev.1.00 Apr 12, 2011 Page 2 of 6 RJP30E2DPK-M0 , Collector Current IC (A) Page 3 of 6 RJP30E2DPK-M0 Preliminary Typical Capacitance vs , RJP30E2DPK-M0 Preliminary Normalized Transient Thermal Impedance vs. Pulse Width 10 Tc = 25°C 3 1
Renesas Electronics
Original
R07DS0347EJ0200 PRSS0003AF-A rjp30e2dpp r07ds0347ej

rjp30e2

Abstract: Preliminary Datasheet RJP30E2DPK-M0 Silicon N Channel IGBT High Speed Power Switching , .1.00 Apr 12, 2011 Page 1 of 6 RJP30E2DPK-M0 Preliminary Electrical Characteristics (Ta = 25 , RJP30E2DPK-M0 Preliminary Main Characteristics Maximum Safe Operation Area Typical Output , 25°C 75°C 0.1 1 10 100 Collector Current IC (A) Page 3 of 6 RJP30E2DPK-M0 , .1.00 Apr 12, 2011 Page 4 of 6 RJP30E2DPK-M0 Preliminary Normalized Transient Thermal Impedance vs
Renesas Electronics
Original

RJP30E2

Abstract: Preliminary Datasheet RJP30E2DPP-M0 Silicon N Channel IGBT High Speed Power Switching , Page 1 of 6 RJP30E2DPP-M0 Preliminary Electrical Characteristics (Ta = 25°C) Item Zero , © Notes: 3. Pulse test. R07DS0347EJ0200 Rev.2.00 Apr 12, 2011 Page 2 of 6 RJP30E2DPP-M0 , Collector Current IC (A) Page 3 of 6 RJP30E2DPP-M0 Preliminary Typical Capacitance vs , RJP30E2DPP-M0 Preliminary Normalized Transient Thermal Impedance vs. Pulse Width 10 Tc = 25°C 3 1
Renesas Electronics
Original

RJJ0319DSP

Abstract: BCR8PM equivalent Preliminary Datasheet RJP30E2DPP-M0 Silicon N Channel IGBT High Speed Power Switching , .2.00 Apr 12, 2011 Page 1 of 6 RJP30E2DPP-M0 Preliminary Electrical Characteristics (Ta = 25 , RJP30E2DPP-M0 Preliminary Main Characteristics Maximum Safe Operation Area Typical Output , 25°C 75°C 0.1 1 10 100 Collector Current IC (A) Page 3 of 6 RJP30E2DPP-M0 , .2.00 Apr 12, 2011 Page 4 of 6 RJP30E2DPP-M0 Preliminary Normalized Transient Thermal Impedance vs
Renesas Electronics
Original
BCR8PM equivalent N0201 NP109N055PUJ rjk5020 RJP30H transistor marking WC 2C R07CS0003EJ0200