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ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73127RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73096RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
TIL604HR2 Texas Instruments Photo Transistor, PHOTO TRANSISTOR DETECTOR visit Texas Instruments
LP395Z/LFT1 Texas Instruments Ultra Reliable Power Transistor 3-TO-92 visit Texas Instruments

rf transistor 2.5GHz

Catalog Datasheet MFG & Type PDF Document Tags

bfp640esd

Abstract: BFP740FESD Technologies 7 / 21 BFP640ESD ESD-Hardened SiGe Ultra Low Noise RF Transistor 2010-06-30 , Note AN218 Revision: Rev. 1.0 2010-06-30 RF and Protection Devices Edition 2010-06-30 , Systems Inc. RED HATTM Red Hat, Inc. RFMDTM RF Micro Devices, Inc. SIRIUSTM of Sirius Sattelite Radio Inc , transistor intented to a wide range of wireless applications. It is based upon Infineon Technologies' B7HF , lines of 0.9mm length each are designed for the FR4 PCB board with the RF ground metal layer of 250um
Infineon Technologies
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BFP740FESD WiMAX RF Transceiver S11-S22 BFP540FESD BFP640FESD C166 TSLP-2-17 ESD0P2RF-02LRH

SMD M05 sot23

Abstract: A3 smd sot-343 www.cel.com/rf Front End Components for UHF to 2.5 GHz continued MMIC & Transistor LNAs (Performance @ 1 , Transistor 0.75 @ 5.8 GHz 14 @ 5.8 GHz +4.5 M04 6 www.cel.com/rf M04 OUT 2.4 & 5.8 , 2013-2014 RF & Wireless Semiconductors P R O D U C T S b y A P P L I C AT I O N , Corporation, formerly NEC Electronics Corporation. CSDBD products include RF Front End Components for UHF , RF Switch ICs components, optocouplers, solid state relays, and lasers and SPDTs (Single
California Eastern Laboratories
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SMD M05 sot23 A3 smd sot-343 nE352 NE5531 2013/4M

7625 transistor

Abstract: rf transistor 2.5GHz operation. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 2.5GHz spread spectrum transmitters , Block Diagram RF Micro Devices, Inc. 7625 Thorndike Road Greensboro, NC 27409, USA Tel (910)664 1233 , Supply Current 350 mA Input RF Power +12 dBm Operating Ambient Temperature -40 to +85 Storage Temperature -40 to +150 °c A Caution! ESD sensitive device. RF Micro Devices believes the furnished
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RF2129 7625 transistor rf transistor 2.5GHz RQG4131 1800MH 2500MH T0Q4131 0DDD44S

rf2163

Abstract: RF2163 PCBA Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF , Efficiency RF OUT RF OUT RF OUT 1 RF IN BIAS GND2 PWR SEN 2 3 4 5 PWR REF 16 15 14 13 12 11 , Amplifier Fully Assembled Evaluation Board Functional Block Diagram RF Micro Devices, Inc. 7628 , Voltage (VREG) DC Supply Current Input RF Power Operating Ambient Temperature Storage Temperature Moisture , information. Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct
RF Micro Devices
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rf2163 RF2163 PCBA RF2163

proportional control circuit

Abstract: RF2163 operation. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 2.5GHz spread-spectrum , 1 16 15 14 13 · 19dB Small Signal Gain · High Power Added Efficiency RF IN 2 12 RF OUT · Patent Pending Power Sense Technology BIAS GND2 3 11 RF OUT · 1800MHz to 2500MHz Frequency Range PWR SEN 4 10 RF OUT 9 GND 8 BIAS GND 1 7 VREG2
RF Micro Devices
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proportional control circuit sen-1000 SEN1000 SPP-012

rf transistor 2.5GHz

Abstract: RF5622 Transistor (HBT) process, and has been designed for use as the final RF amplifier in 2.5GHz OFDM and other , RoHS Compliant & Pb-Free Product Package Style: QFN, 8-Pin, 2x2x0.45mm 8 7 Features RF IN 1 6 VC2 Input Match 2Fo Filter Bias Circuit 3 Power Detector 5 RF OUT 4 NC , InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MICRO , trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc. Rev A2 DS071011
RF Micro Devices
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RF5622 RF5622PCBA-41X 6VC2 TRANSISTOR 2.4GHZ Bluetooth detector circuit 2.4GHz Power Amplifier transistor IEEE802

L0250

Abstract: RF2129 Transistor (HBT) process, and has been designed for use as the final RF amplifier in 2.5GHz spread spectrum , RF Preliminary R F2129 MICRO-DEVICES 3V, 2.5GHZ LINEAR POWER AMPLIFIER Typical Applications , Bi-CMOS Package Style: PSOP-8 VCC2|T vcc2[T nc[T RF IN[T BIAS CIRCUITS I PACKAGE BASE GND T] VCC1 T] RF OUT ~6~| RF OUT J] PC Features â'¢ Single 3.3V Power Supply â'¢ +26dBm Saturated Output Power , Fully Assembled Evaluation Board Functional Block Diagram RF Micro Devices, Inc. 7625 Thorndike Road
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L0250
Abstract: Pb-Free Product Package Style: QFN, 8-Pin, 2.2x2.2x0.45mm 8 7 Features RF IN 1 6 VC2 Input Match 2Fo Filter Bias Circuit 3 Power Detector 5 RF OUT 4 NC VREG 2 , manufactured on an advanced InGaP Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 2.5GHz OFDM and other spread-spectrum transmitters , Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MICRO DEVICES®, RFMD®, Optimum RF Micro Devices
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DS081104
Abstract: InGaP Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF , 14 13 12 RF OUT Features BIAS VCC 1 1st Stage 2nd Stage Interstage Match Interstage Match , +26dBm Separate Power Detect/Power Down Pins Multiple Frequency Ranges RF IN 2 VCC2 11 RF OUT 10 RF , BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MICRO DEVICES®, RFMD®, Optimum , their respective owners. ©2006, RF Micro Devices, Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 RF Micro Devices
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RF52633 RF5263 RF5263WLPCK-410 RF5263WBPCK-410 RF5263WMPCK-410 DS080519

c 1027 transistor

Abstract: Power-Amplifier . 10-33' MAX2601 3.6V, 1W RF Power Transistor for 900MHz Appiications. 10-49 MAX2602 3.6V, 1W RF Power Transistor with On-Chip Diode for 900MHz Applications , _ W ire le s s /R F P ro d u c ts Wireless/RF Products. Product T a b le , . 10-21 * MAX2410 Low-Cost RF Up/Downconverter with Low-Noise Amplifier and Power-Amplifier D river. 10-23* MAX2411A Low-Cost RF Up/Downconverter with Low-Noise Amplifier and Power-Amplifier Driver with
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c 1027 transistor Power-Amplifier TRANSISTOR RF 1049 R1075 MAX2102 MAX2406 MAX2420 900MH MAX2421 MAX2422

L0250

Abstract: RF2129 Transistor (HBT) process, and has been designed for use as the final RF amplifier in 2.5GHz spread spectrum , OUT RF output and bias for the output stage. The power supply for the output transistor needs to be , RF Preliminary R F2129 MICRO-DEVICES 3V, 2.5GHZ LINEAR POWER AMPLIFIER Typical Applications , Bi-CMOS Package Style: PSOP-8 VCC2[T VCC2[T nc|T RF IN[T BIAS CIRCUITS I PACKAGE BASE GND T] VCC1 T] RF OUT "è] RF OUT J] PC Features â'¢ Single 3.3V Power Supply â'¢ +26dBm Saturated Output Power
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pf5a

r1390

Abstract: RF2163 Transistor (HBT) process, and has been designed for use as the final RF amplifier in 2.5GHz spread-spectrum , pin 1. RF output and bias for the output stage. The power supply for the output transistor needs to be , Saturated Output Power · 19dB Small Signal Gain · High Power Added Efficiency GND VCC 1 RF IN BIAS GND2 PWR SEN 2 3 4 5 PWR REG 16 15 14 13 12 11 RF OUT RF OUT RF OUT NC · Patent , Assembled Evaluation Board Functional Block Diagram RF Micro Devices, Inc. 7628 Thorndike Road
RF Micro Devices
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r1390 2400MH 2483MH
Abstract: Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in , '¢ +21dBm, , NC NC NC 4 Functional Block Diagram Rev A6 050322 RF Micro Devices, Inc. 7628 RF Micro Devices
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RF5125 RF5125PCBA-41XF
Abstract: Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in , '¢ +21dBm, , NC NC NC 4 Functional Block Diagram Rev A4 050208 RF Micro Devices, Inc. 7628 RF Micro Devices
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rf transistor 2.5GHz

Abstract: Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF , Bi-CMOS Features · Single Power Supply 3.0V to 5.0V · +21dBm, , 2400MHz to 2500MHz Frequency Range · +18dBm, , RF5125PCBA-41XFully Assembled Evaluation Board Functional Block Diagram RF Micro Devices, Inc. 7628
RF Micro Devices
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Abstract: Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in , '¢ +21dBm, , RF IN 3 â'¢ 28dB Typical Small Signal Gain 10 RF OUT Tune Ground Ordering Information , NC NC NC 4 Functional Block Diagram Rev A2 050114 RF Micro Devices, Inc. 7628 RF Micro Devices
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rf transistor 2.5GHz

Abstract: RF5125 Transistor (HBT) process, and has been designed for use as the final RF amplifier in 2.5GHz OFDM and other , %EVM, 165mA@VCC =3.3V 12 RF OUT/VC2 1 InterStage Match RF IN 2 Input Match Features · Single , Technology Matching® Applied 2 PLCS 0.10 C B 0.05 C 0.90 0.85 11 RF OUT · 28dB Typical Small , %EVM 105mA@VCC =3.3V RF IN 3 10 RF OUT Bias 5 6 7 8 VB1 VB2 PDETECT 9 GND , , 2.4GHz to 2.5GHz Linear Power Amplifier RF5125PCBA-41XFully Assembled Evaluation Board RF Micro
RF Micro Devices
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micro rf 2.4ghz

rf 4*4 mm QFN 16PIN

Abstract: Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF , Mode RF OUT RF OUT NC 1 GND GND NC 2 3 4 5 NC 16 15 14 13 12 11 10 Bias Circuits , Power Amplifier Fully Assembled Evaluation Board 6 RF IN 7 NC 8 VPC 9 GND Functional Block Diagram RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 , Ratings Parameter Supply Voltage Power Control Voltage (VPC) DC Supply Current Input RF Power Operating
RF Micro Devices
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rf 4*4 mm QFN 16PIN RF2189

RF2163 PCBA

Abstract: RF2163 Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF , 14 13 · 19dB Small Signal Gain · High Power Added Efficiency RF IN 2 12 RF OUT · Patent Pending Power Sense Technology BIAS GND2 3 11 RF OUT · 1800MHz to 2500MHz Frequency Range PWR SEN 4 10 RF OUT 9 GND 8 BIAS GND 1 7 VREG2 6 VREG1 PWR , PCBA 3V, 2.5GHz Linear Power Amplifier Fully Assembled Evaluation Board RF Micro Devices, Inc
RF Micro Devices
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1800mhz rf frequency power amplifier circuit

Abstract: Optional RF power amplifier Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF , Circuits 12 RF OUT GND 2 GND 3 11 RF OUT NC 4 10 NC Functional Block Diagram Rev A4 010424 · 1800MHz to 2500MHz Frequency Range 9 GND 8 VPC 7 NC 6 RF IN , Amplifier Fully Assembled Evaluation Board RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC , ) DC Supply Current Input RF Power Operating Ambient Temperature Storage Temperature Moisture
RF Micro Devices
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1800mhz rf frequency power amplifier circuit Optional RF power amplifier
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