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RF-HDT-SJLS-G1 Texas Instruments
RF-HDT-SNLE-G1 Texas Instruments TAG-IT(TM) HF-I STANDARD TRANSPONDER CHIP (WAFER, INKED, GRIND, SAWN ON TAPE)
RF-HDT-WNMC-M0 Texas Instruments Tag-it(TM) HF-I Plus Transponder Chip (Wafer, unprocessed) 0-WAFERSALE
RF-HDT-AJLC-G0 Texas Instruments
RF-HDT-WNME-M0 Texas Instruments Tag-it(TM) HF-I Standard Transponder Chip (Unprocessed) 0-WAFERSALE
RF-HDT-AJLE-G1 Texas Instruments RF-HDT-AJLE Tag-it(TM) HF-I Standard Transponder Chip (Wafer, bumped, inked, grind, sawn on tape)

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rf transistor 2.5GHz

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: Technologies 7 / 21 BFP640ESD ESD-Hardened SiGe Ultra Low Noise RF Transistor 2010-06-30 , Note AN218 Revision: Rev. 1.0 2010-06-30 RF and Protection Devices Edition 2010-06-30 , Systems Inc. RED HATTM Red Hat, Inc. RFMDTM RF Micro Devices, Inc. SIRIUSTM of Sirius Sattelite Radio Inc , transistor intented to a wide range of wireless applications. It is based upon Infineon Technologies' B7HF , lines of 0.9mm length each are designed for the FR4 PCB board with the RF ground metal layer of 250um Infineon Technologies
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BFP740FESD WiMAX RF Transceiver BFP640FESD BFP540FESD LQW15A S11-S22 TSLP-2-17 ESD0P2RF-02LRH
Abstract: www.cel.com/rf Front End Components for UHF to 2.5 GHz continued MMIC & Transistor LNAs (Performance @ 1 , Transistor 0.75 @ 5.8 GHz 14 @ 5.8 GHz +4.5 M04 6 www.cel.com/rf M04 OUT 2.4 & 5.8 , 2013-2014 RF & Wireless Semiconductors P R O D U C T S b y A P P L I C AT I O N , Corporation, formerly NEC Electronics Corporation. CSDBD products include RF Front End Components for UHF , RF Switch ICs components, optocouplers, solid state relays, and lasers and SPDTs (Single California Eastern Laboratories
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A3 smd sot-343 nE352 NE5531 SMD M05 sot23 2013/4M
Abstract: operation. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 2.5GHz spread spectrum transmitters , Block Diagram RF Micro Devices, Inc. 7625 Thorndike Road Greensboro, NC 27409, USA Tel (910)664 1233 , Supply Current 350 mA Input RF Power +12 dBm Operating Ambient Temperature -40 to +85 Storage Temperature -40 to +150 °c A Caution! ESD sensitive device. RF Micro Devices believes the furnished -
OCR Scan
RF2129 7625 transistor RQG4131 1800MH 2500MH T0Q4131 0DDD44S
Abstract: Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF , Efficiency RF OUT RF OUT RF OUT 1 RF IN BIAS GND2 PWR SEN 2 3 4 5 PWR REF 16 15 14 13 12 11 , Amplifier Fully Assembled Evaluation Board Functional Block Diagram RF Micro Devices, Inc. 7628 , Voltage (VREG) DC Supply Current Input RF Power Operating Ambient Temperature Storage Temperature Moisture , information. Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct RF Micro Devices
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rf2163 RF2163 PCBA RF2163
Abstract: operation. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 2.5GHz spread-spectrum , 1 16 15 14 13 · 19dB Small Signal Gain · High Power Added Efficiency RF IN 2 12 RF OUT · Patent Pending Power Sense Technology BIAS GND2 3 11 RF OUT · 1800MHz to 2500MHz Frequency Range PWR SEN 4 10 RF OUT 9 GND 8 BIAS GND 1 7 VREG2 RF Micro Devices
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proportional control circuit sen-1000 SEN1000 SPP-012
Abstract: Transistor (HBT) process, and has been designed for use as the final RF amplifier in 2.5GHz OFDM and other , RoHS Compliant & Pb-Free Product Package Style: QFN, 8-Pin, 2x2x0.45mm 8 7 Features RF IN 1 6 VC2 Input Match 2Fo Filter Bias Circuit 3 Power Detector 5 RF OUT 4 NC , InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MICRO , trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc. Rev A2 DS071011 RF Micro Devices
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RF5622 RF5622PCBA-41X 2.4GHz Power Amplifier transistor 6VC2 Bluetooth detector circuit TRANSISTOR 2.4GHZ IEEE802
Abstract: Transistor (HBT) process, and has been designed for use as the final RF amplifier in 2.5GHz spread spectrum , RF Preliminary R F2129 MICRO-DEVICES 3V, 2.5GHZ LINEAR POWER AMPLIFIER Typical Applications , Bi-CMOS Package Style: PSOP-8 VCC2|T vcc2[T nc[T RF IN[T BIAS CIRCUITS I PACKAGE BASE GND T] VCC1 T] RF OUT ~6~| RF OUT J] PC Features â'¢ Single 3.3V Power Supply â'¢ +26dBm Saturated Output Power , Fully Assembled Evaluation Board Functional Block Diagram RF Micro Devices, Inc. 7625 Thorndike Road -
OCR Scan
L0250
Abstract: Pb-Free Product Package Style: QFN, 8-Pin, 2.2x2.2x0.45mm 8 7 Features RF IN 1 6 VC2 Input Match 2Fo Filter Bias Circuit 3 Power Detector 5 RF OUT 4 NC VREG 2 , manufactured on an advanced InGaP Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 2.5GHz OFDM and other spread-spectrum transmitters , Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MICRO DEVICES®, RFMD®, Optimum RF Micro Devices
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DS081104
Abstract: InGaP Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF , 14 13 12 RF OUT Features BIAS VCC 1 1st Stage 2nd Stage Interstage Match Interstage Match , +26dBm Separate Power Detect/Power Down Pins Multiple Frequency Ranges RF IN 2 VCC2 11 RF OUT 10 RF , BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MICRO DEVICES®, RFMD®, Optimum , their respective owners. ©2006, RF Micro Devices, Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 RF Micro Devices
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RF52633 RF5263 RF5263WLPCK-410 RF5263WBPCK-410 RF5263WMPCK-410 DS080519
Abstract: . 10-33' MAX2601 3.6V, 1W RF Power Transistor for 900MHz Appiications. 10-49 MAX2602 3.6V, 1W RF Power Transistor with On-Chip Diode for 900MHz Applications , _ W ire le s s /R F P ro d u c ts Wireless/RF Products. Product T a b le , . 10-21 * MAX2410 Low-Cost RF Up/Downconverter with Low-Noise Amplifier and Power-Amplifier D river. 10-23* MAX2411A Low-Cost RF Up/Downconverter with Low-Noise Amplifier and Power-Amplifier Driver with -
OCR Scan
c 1027 transistor Power-Amplifier R1075 TRANSISTOR RF 1049 MAX2102 MAX2406 MAX2420 900MH MAX2421 MAX2422
Abstract: Transistor (HBT) process, and has been designed for use as the final RF amplifier in 2.5GHz spread spectrum , OUT RF output and bias for the output stage. The power supply for the output transistor needs to be , RF Preliminary R F2129 MICRO-DEVICES 3V, 2.5GHZ LINEAR POWER AMPLIFIER Typical Applications , Bi-CMOS Package Style: PSOP-8 VCC2[T VCC2[T nc|T RF IN[T BIAS CIRCUITS I PACKAGE BASE GND T] VCC1 T] RF OUT "è] RF OUT J] PC Features â'¢ Single 3.3V Power Supply â'¢ +26dBm Saturated Output Power -
OCR Scan
pf5a
Abstract: Transistor (HBT) process, and has been designed for use as the final RF amplifier in 2.5GHz spread-spectrum , pin 1. RF output and bias for the output stage. The power supply for the output transistor needs to be , Saturated Output Power · 19dB Small Signal Gain · High Power Added Efficiency GND VCC 1 RF IN BIAS GND2 PWR SEN 2 3 4 5 PWR REG 16 15 14 13 12 11 RF OUT RF OUT RF OUT NC · Patent , Assembled Evaluation Board Functional Block Diagram RF Micro Devices, Inc. 7628 Thorndike Road RF Micro Devices
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r1390 2400MH 2483MH
Abstract: Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in , '¢ +21dBm, , NC NC NC 4 Functional Block Diagram Rev A6 050322 RF Micro Devices, Inc. 7628 RF Micro Devices
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RF5125 RF5125PCBA-41XF
Abstract: Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in , '¢ +21dBm, , NC NC NC 4 Functional Block Diagram Rev A4 050208 RF Micro Devices, Inc. 7628 RF Micro Devices
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Abstract: Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF , Bi-CMOS Features · Single Power Supply 3.0V to 5.0V · +21dBm, , 2400MHz to 2500MHz Frequency Range · +18dBm, , RF5125PCBA-41XFully Assembled Evaluation Board Functional Block Diagram RF Micro Devices, Inc. 7628 RF Micro Devices
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Abstract: Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in , '¢ +21dBm, , RF IN 3 â'¢ 28dB Typical Small Signal Gain 10 RF OUT Tune Ground Ordering Information , NC NC NC 4 Functional Block Diagram Rev A2 050114 RF Micro Devices, Inc. 7628 RF Micro Devices
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Abstract: Transistor (HBT) process, and has been designed for use as the final RF amplifier in 2.5GHz OFDM and other , %EVM, 165mA@VCC =3.3V 12 RF OUT/VC2 1 InterStage Match RF IN 2 Input Match Features · Single , Technology Matching® Applied 2 PLCS 0.10 C B 0.05 C 0.90 0.85 11 RF OUT · 28dB Typical Small , %EVM 105mA@VCC =3.3V RF IN 3 10 RF OUT Bias 5 6 7 8 VB1 VB2 PDETECT 9 GND , , 2.4GHz to 2.5GHz Linear Power Amplifier RF5125PCBA-41XFully Assembled Evaluation Board RF Micro RF Micro Devices
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micro rf 2.4ghz
Abstract: Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF , Mode RF OUT RF OUT NC 1 GND GND NC 2 3 4 5 NC 16 15 14 13 12 11 10 Bias Circuits , Power Amplifier Fully Assembled Evaluation Board 6 RF IN 7 NC 8 VPC 9 GND Functional Block Diagram RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 , Ratings Parameter Supply Voltage Power Control Voltage (VPC) DC Supply Current Input RF Power Operating RF Micro Devices
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rf 4*4 mm QFN 16PIN RF2189
Abstract: Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF , 14 13 · 19dB Small Signal Gain · High Power Added Efficiency RF IN 2 12 RF OUT · Patent Pending Power Sense Technology BIAS GND2 3 11 RF OUT · 1800MHz to 2500MHz Frequency Range PWR SEN 4 10 RF OUT 9 GND 8 BIAS GND 1 7 VREG2 6 VREG1 PWR , PCBA 3V, 2.5GHz Linear Power Amplifier Fully Assembled Evaluation Board RF Micro Devices, Inc RF Micro Devices
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Abstract: Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF , Circuits 12 RF OUT GND 2 GND 3 11 RF OUT NC 4 10 NC Functional Block Diagram Rev A4 010424 · 1800MHz to 2500MHz Frequency Range 9 GND 8 VPC 7 NC 6 RF IN , Amplifier Fully Assembled Evaluation Board RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC , ) DC Supply Current Input RF Power Operating Ambient Temperature Storage Temperature Moisture RF Micro Devices
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Optional RF power amplifier
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