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RF 100 Metabo Power Tools INFLATING GUN WITH PRESSURE GAUGE from €20.7000 (Nov 2016) Farnell element14 Buy
RF 1A Sanken Electric DIODE GEN PURP 600V 600MA AXIAL from $0.2295 (Nov 2016) Digi-Key Buy
RF 1A Sanken Electric - 1,000 from $0.44 (Oct 2016) Quest Components Buy
RF 1A DK Sanken Electric DIODE GEN PURP 600V 600MA AXIAL from $0.2295 (Nov 2016) Digi-Key Buy
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RF 1B Sanken Electric Diode Switching 800V 0.6A 2-Pin 50 from $0.0055 (Oct 2016) Chip1Stop Buy
RF 1B Sanken Electric DIODE GEN PURP 800V 600MA AXIAL from $0.2295 (Nov 2016) Digi-Key Buy
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RF 1B DK Sanken Electric DIODE GEN PURP 800V 600MA AXIAL from $0.2295 (Nov 2016) Digi-Key Buy
RF 1BV Sanken Electric DIODE GEN PURP 800V 600MA AXIAL from $0.2295 (Nov 2016) Digi-Key Buy
RF 1BV DK Sanken Electric DIODE GEN PURP 800V 600MA AXIAL from $0.2295 (Nov 2016) Digi-Key Buy
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RF 1BV1 DK Sanken Electric DIODE GEN PURP 800V 600MA AXIAL from $0.2040 (Nov 2016) Digi-Key Buy
RF 2052 - - 2,755 (Nov 2016) Chip One Exchange Buy
RF 60 Metabo Power Tools BLOW GUN, 6.35MM, 12BAR 3 from $52.1040 (Nov 2016) element14 Asia-Pacific Buy
RF 60 Metabo Power Tools BLOW GUN, 6.35MM, 12BAR 10 from €585.5440 (Nov 2016) Farnell element14 Buy
RF 60 Metabo Power Tools BLOW GUN, 6.35MM, 12BAR; Operating Pressure Max:12bar; Air Coupling Size:6.35mm; Product Range:-; SVHC:No SVHC (17-Dec-2015) ;RoHS Compliant: NA 3 from $37.77 (Nov 2016) Newark element14 Buy

rf transistor 2.5GHz

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: Technologies 7 / 21 BFP640ESD BFP640ESD ESD-Hardened SiGe Ultra Low Noise RF Transistor 2010-06-30 , Note AN218 AN218 Revision: Rev. 1.0 2010-06-30 RF and Protection Devices Edition 2010-06-30 , Systems Inc. RED HATTM Red Hat, Inc. RFMDTM RF Micro Devices, Inc. SIRIUSTM of Sirius Sattelite Radio Inc , transistor intented to a wide range of wireless applications. It is based upon Infineon Technologies' B7HF , lines of 0.9mm length each are designed for the FR4 PCB board with the RF ground metal layer of 250um ... Infineon Technologies
Original
datasheet

21 pages,
1346.4 Kb

C166 S11-S22 rf transistor 2.5GHz LQW15A BFP540FESD BFP640FESD WiMAX RF Transceiver AN218 BFP740FESD bfp640esd BFP640ESD TEXT
datasheet frame
Abstract: www.cel.com/rf Front End Components for UHF to 2.5 GHz continued MMIC & Transistor LNAs (Performance @ 1 , Transistor 0.75 @ 5.8 GHz 14 @ 5.8 GHz +4.5 M04 6 www.cel.com/rf M04 OUT 2.4 & 5.8 , 2013-2014 RF & Wireless Semiconductors P R O D U C T S b y A P P L I C AT I O N , Corporation, formerly NEC Electronics Corporation. CSDBD products include RF Front End Components for UHF , RF Switch ICs components, optocouplers, solid state relays, and lasers and SPDTs (Single ... California Eastern Laboratories
Original
datasheet

24 pages,
1202.74 Kb

SMD M05 sot23 NE5531 TEXT
datasheet frame
Abstract: operation. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 2.5GHz spread spectrum transmitters , Block Diagram RF Micro Devices, Inc. 7625 Thorndike Road Greensboro, NC 27409, USA Tel (910)664 1233 , Supply Current 350 mA Input RF Power +12 dBm Operating Ambient Temperature -40 to +85 Storage Temperature -40 to +150 °c A Caution! ESD sensitive device. RF Micro Devices believes the furnished ... OCR Scan
datasheet

4 pages,
220.5 Kb

RQG4131 RF2129 rf transistor 2.5GHz 7625 transistor TEXT
datasheet frame
Abstract: Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF , Efficiency RF OUT RF OUT RF OUT 1 RF IN BIAS GND2 PWR SEN 2 3 4 5 PWR REF 16 15 14 13 12 11 , Amplifier Fully Assembled Evaluation Board Functional Block Diagram RF Micro Devices, Inc. 7628 , Voltage (VREG) DC Supply Current Input RF Power Operating Ambient Temperature Storage Temperature Moisture , information. Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct ... RF Micro Devices
Original
datasheet

10 pages,
162.21 Kb

RF2163 PCBA rf2163 RF2163 TEXT
datasheet frame
Abstract: operation. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 2.5GHz spread-spectrum , 1 16 15 14 13 · 19dB Small Signal Gain · High Power Added Efficiency RF IN 2 12 RF OUT · Patent Pending Power Sense Technology BIAS GND2 3 11 RF OUT · 1800MHz to 2500MHz Frequency Range PWR SEN 4 10 RF OUT 9 GND 8 BIAS GND 1 7 VREG2 ... RF Micro Devices
Original
datasheet

10 pages,
127.68 Kb

RF2163 PCBA RF2163 proportional control circuit TEXT
datasheet frame
Abstract: Transistor (HBT) process, and has been designed for use as the final RF amplifier in 2.5GHz OFDM and other , RoHS Compliant & Pb-Free Product Package Style: QFN, 8-Pin, 2x2x0.45mm 8 7 Features RF IN 1 6 VC2 Input Match 2Fo Filter Bias Circuit 3 Power Detector 5 RF OUT 4 NC , InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MICRO , trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc. Rev A2 DS071011 DS071011 ... RF Micro Devices
Original
datasheet

2 pages,
75.41 Kb

TRANSISTOR 2.4GHZ RF5622PCBA-41X Bluetooth detector circuit 2.4GHz Power Amplifier transistor RF5622 rf transistor 2.5GHz TEXT
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Abstract: Transistor (HBT) process, and has been designed for use as the final RF amplifier in 2.5GHz spread spectrum , RF Preliminary R F2129 F2129 MICRO-DEVICES 3V, 2.5GHZ LINEAR POWER AMPLIFIER Typical Applications , Bi-CMOS Package Style: PSOP-8 VCC2|T vcc2[T nc[T RF IN[T BIAS CIRCUITS I PACKAGE BASE GND T] VCC1 T] RF OUT ~6~| RF OUT J] PC Features • Single 3.3V Power Supply • +26dBm Saturated Output Power , Fully Assembled Evaluation Board Functional Block Diagram RF Micro Devices, Inc. 7625 Thorndike Road ... OCR Scan
datasheet

5 pages,
228.66 Kb

RF2129 rf transistor 2.5GHz L0250 F2129 TEXT
datasheet frame
Abstract: Pb-Free Product Package Style: QFN, 8-Pin, 2.2x2.2x0.45mm 8 7 Features RF IN 1 6 VC2 Input Match 2Fo Filter Bias Circuit 3 Power Detector 5 RF OUT 4 NC VREG 2 , manufactured on an advanced InGaP Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 2.5GHz OFDM and other spread-spectrum transmitters , Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MICRO DEVICES®, RFMD®, Optimum ... RF Micro Devices
Original
datasheet

2 pages,
87 Kb

RF5622 TEXT
datasheet frame
Abstract: InGaP Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF , 14 13 12 RF OUT Features BIAS VCC 1 1st Stage 2nd Stage Interstage Match Interstage Match , +26dBm Separate Power Detect/Power Down Pins Multiple Frequency Ranges RF IN 2 VCC2 11 RF OUT 10 RF , BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MICRO DEVICES®, RFMD®, Optimum , their respective owners. ©2006, RF Micro Devices, Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 ... RF Micro Devices
Original
datasheet

2 pages,
91.09 Kb

RF52633 RF5263 TEXT
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Abstract: . 10-33' MAX2601 MAX2601 3.6V, 1W RF Power Transistor for 900MHz Appiications. 10-49 MAX2602 MAX2602 3.6V, 1W RF Power Transistor with On-Chip Diode for 900MHz Applications , _ W ire le s s /R F P ro d u c ts Wireless/RF Products. Product T a b le , . 10-21 * MAX2410 MAX2410 Low-Cost RF Up/Downconverter with Low-Noise Amplifier and Power-Amplifier D river. 10-23* MAX2411A MAX2411A Low-Cost RF Up/Downconverter with Low-Noise Amplifier and Power-Amplifier Driver with ... OCR Scan
datasheet

1 pages,
43.55 Kb

TRANSISTOR RF 1049 R1075 Power-Amplifier c 1027 transistor MAX2102 MAX2406 MAX2410 MAX2411A MAX2420 MAX2421 MAX2422 MAX2426 MAX2460 MAX2463 MAX2510 MAX2511 MAX2601 MAX2602 MAX2620 MAX2630 MAX2631 MAX2632 MAX2633 MAX2662 MAX2690 TEXT
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Archived Files

Abstract Saved from Date Saved File Size Type Download
ST | NPN SILICON RF TRANSISTOR Datasheet NPN SILICON RF TRANSISTOR START499 START499 Document Format Size Document Number Date Update Pages Portable Document Format DATA Nov 2000 START499 START499 NPN Silicon RF Transistor SOT343 (SC70) ORDER CODE TBD BRANDING 499 that pro- vide the market with a Si state-of-art RF process. Manufactured in St 3rd generation
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/7548.htm
STMicroelectronics 30/01/2001 6.46 Kb HTM 7548.htm
Set Wireless Building Blocks Transistor Arrays 2.4GHz RF Power Amplifier P(1dB): +24dBm, Integrated T/R Switch SSOP Transistor Arrays (back to top ) Part # Configuration Ft
/datasheets/files/harris/comm/wireless.htm
Harris 15/08/1997 11.47 Kb HTM wireless.htm
in the down-conversion link is noise created by the LNA's first transistor input stage. Noise equivalent model for the bipolar transistor (the Giacoleto model-see Figure 2 ) helps in voltage. The thermal noise generated by parasitic base resistance (Rbb´) in a transistor is Vn(f ), and b is the transistor's DC current gain. Thus, the total noise spectral density generated by the transistor's input stage is the sum of the thermal and shot noise: g n = 4kTRbb´ + R SOURCE 2qIc
/datasheets/files/maxim/0008/view_047.htm
Maxim 04/04/2001 22.14 Kb HTM view_047.htm
chief deterrent - the difficulty, cost and time to build the radio. Building a DSSS radio requires RF signal strength indication) on one chip; a silicon 2.4 GHz RF/intermediate frequency (IF) converter; and a silicon RF power amplifier. Interoperability is assured via impedance matching signal level radio. Beyond the prerequisite expertise in digital modulation spread spectrum and RF, a DSSS data RF; a separate modulator, demodulator, filter and limiter for the IF/QMOD function; and a custom
/datasheets/files/harris/whatsnew/prism/prisme.htm
Harris 15/08/1997 25.86 Kb HTM prisme.htm
ST | GPS RF FRONT-END IC STB5600 STB5600 GPS RF STB5600 STB5600 GPS RF FRONT-END IC n ONE CHIP SYSTEM TO INTERFACE ACTIVE ANTENNA TO ST20GP1 ST20GP1 MICROCONTROLLER n Global Positioning System RF front-end. The chip provides down conversion from the GPS (L1) signal at a single external reference oscillator to generate both RF local oscillator signals and the antenna, via a ceramic RF filter. The gain between the antenna element and the STB5600 STB5600 is
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/6088-v1.htm
STMicroelectronics 02/04/1999 12.39 Kb HTM 6088-v1.htm
ST | GPS RF FRONT-END IC Datasheet GPS RF FRONT-END IC STB5600 STB5600 Document Format Size Document Number 10 Raw Text Format STB5600 STB5600 GPS RF FRONT-END IC n ONE CHIP SYSTEM STMicroelectronics HSB2, High Speed Bipolar technology, implements a Global Positioning System RF front-end. to generate both RF local oscillator signals and the processor reference clock. [ PIN CONNECTION
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/6088.htm
STMicroelectronics 20/10/2000 14.67 Kb HTM 6088.htm
ST | GPS RF FRONT-END IC Datasheet GPS RF FRONT-END IC STB5600 STB5600 Document Format Size Document Number /1998 10 Raw Text Format STB5600 STB5600 GPS RF FRONT-END IC n Global Positioning System RF front-end. The chip provides down conversion from the GPS (L1) signal at uses a single external reference oscillator to generate both RF local oscillator signals and the
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/6088-v3.htm
STMicroelectronics 25/05/2000 14.17 Kb HTM 6088-v3.htm
ST | GPS RF FRONT-END IC STB5600 STB5600 GPS RF STB5600 STB5600 GPS RF FRONT-END IC n ONE CHIP SYSTEM TO INTERFACE ACTIVE ANTENNA TO ST20GP1 ST20GP1 MICROCONTROLLER n Global Positioning System RF front-end. The chip provides down conversion from the GPS (L1) signal at a single external reference oscillator to generate both RF local oscillator signals and the antenna, via a ceramic RF filter. The gain between the antenna element and the STB5600 STB5600 is
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/6088-v2.htm
STMicroelectronics 14/06/1999 12.35 Kb HTM 6088-v2.htm
RF transceiver (Figure 1). The higher transmit-power level became part of the Bluetooth (Figure 1). The RF switch, the RF bandpass filter, and the connector contribute a power loss of only the RF signal path, basic biasing, and rather rudimentary analog power total RF module footprint is perhaps as small as 10mm x 14mm. 5 The circuit in Figure 3 will variable-gain-amplifier (VGA) stage in the RF path and, consequently, the output power. The four
/datasheets/files/maxim/0012/view_044.htm
Maxim 04/04/2001 34.92 Kb HTM view_044.htm
integrate functions as different as DSP cores and low noise RF amplifiers on the same chip. For high performance radio frequency devices such as an NPN transistor with a transition frequency of 25GHz
/datasheets/files/stmicroelectronics/stonline/press/magazine/challeng/1stedi99/chal05-v1.htm
STMicroelectronics 14/06/1999 10.02 Kb HTM chal05-v1.htm