NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS

Datasheet Archive - Datasheet Search Engine

 

Direct from the Manufacturer

Part Manufacturer Description PDF Samples Ordering
CA3083E Intersil Corporation TRANSISTOR 5 CHANNEL, VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal ri Buy
HFA3127MJ Intersil Corporation TRANSISTOR 5 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal ri Buy
HFA3128Y Intersil Corporation TRANSISTOR 5 CHANNEL, UHF BAND, Si, PNP, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal ri Buy

rf transistor 2.5GHz

Catalog Datasheet Results Type PDF Document Tags
Abstract: Transistor (HBT) process, and has been designed for use as the final RF amplifier in 2.5GHz OFDM and other , RF5622 RF5622 Preliminary 3.0V TO 4.5V, 2.4GHz TO 2.5GHz LINEAR POWER AMPLIFIER VCC VC1 , VREG 2 Applications IEEE802 IEEE802.11b/g/n WLAN Applications 2.5GHz ISM Band Applications Commercial , 2.4GHz to 2.5GHz Frequency Range 11g POUT =+18dBm@3% Typ EVM, 95mA Functional Block Diagram , design. Ordering Information RF5622 RF5622 RF5622PCBA-41X RF5622PCBA-41X 3.0V to 4.5V, 2.4GHz to 2.5GHz Linear Power ... Original
datasheet

2 pages,
75.41 Kb

TRANSISTOR 2.4GHZ RF5622PCBA-41X Bluetooth detector circuit 2.4GHz Power Amplifier transistor RF5622 rf transistor 2.5GHz RF5622 abstract
datasheet frame
Abstract: Proposed 0 Typical Applications · IEEE802 IEEE802.11b/g/n WLAN Applications · 2.5GHz ISM Band Applications , Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 2.5GHz OFDM and other spread-spectrum transmitters. The device is provided in a 3mmx3mm, 16-pin , voltage and power output. -A- RF5125 RF5125 3V TO 5V, 2.4GHz TO 2.5GHz LINEAR POWER AMPLIFIER · Portable , Detector 9 NC 8 PDTECT Ordering Information RF5125 RF5125 3V to 5V, 2.4GHz to 2.5GHz Linear Power Amplifier ... Original
datasheet

2 pages,
62.69 Kb

rf transistor 2.5GHz IEEE802 RF5125 IEEE802 abstract
datasheet frame
Abstract: applications. The device is manufactured on an advanced InGaP Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 2.5GHz OFDM and other , RF5125 RF5125 Proposed 0 3V TO 5V, 2.4GHz TO 2.5GHz LINEAR POWER AMPLIFIER Typical Applications · IEEE802 IEEE802.11b/g/n WLAN Applications · Portable Battery-Powered Equipment · 2.5GHz ISM Band , 3V to 5V, 2.4GHz to 2.5GHz Linear Power Amplifier RF5125PCBA-41XFully Assembled Evaluation Board ... Original
datasheet

2 pages,
81.4 Kb

RF5125 rf transistor 2.5GHz micro rf 2.4ghz IEEE802 IEEE802 abstract
datasheet frame
Abstract: RF52633 RF52633.3V to 5.0 V, 2.5GHz Linear Power Amplifier Preliminary RF5263 RF5263 3.3V TO 5.0V, 2.5GHz , Applications Commercial and Consumer Systems WiBro 2.3GHz to 2.4GHz Band Applications WiMAX 2.5GHz to 2.7GHz , InGaP Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF , voltages and power outputs. Ordering Information RF5263 RF5263 3.3V to 5.0V, 2.5GHz Linear Power , 14 13 12 RF OUT Features BIAS VCC 1 1st Stage 2nd Stage Interstage Match Interstage Match ... Original
datasheet

2 pages,
91.09 Kb

RF52633 RF5263 RF52633 abstract
datasheet frame
Abstract: RF52633 RF52633.3V to 5.0 V, 2.5GHz Linear Power Amplifier RF5263 RF5263 Preliminary 3.3V TO 5.0V, 2.5GHz LINEAR POWER AMPLIFIER VCC1 VCC2 VCC2 16 Features GND Pb-Free Product , Commercial and Consumer Systems WiBro 2.3GHz to 2.4GHz Band Applications WiMAX 2.5GHz to 2.7GHz Band , InGaP Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF , supply voltages and power outputs. Ordering Information RF5263 RF5263 3.3V to 5.0V, 2.5GHz Linear Power ... Original
datasheet

2 pages,
92.77 Kb

RF5263WMPCK-410 RF5263WLPCK-410 RF5263WBPCK-410 RF5263 rf transistor 2.5GHz HBT transistor DSB070521 2.4GHz Power Amplifier transistor RF52633 RF52633 abstract
datasheet frame
Abstract: RSSI. 10-33' MAX2601 MAX2601 3.6V, 1W RF Power Transistor for 900MHz Appiications. 10-49 MAX2602 MAX2602 3.6V, 1W RF Power Transistor with On-Chip Diode for 900MHz , MAX2662 MAX2662 Low-Noise, 2.5GHz Upconverter * MAX2690 MAX2690 Hlgh-Linearity, Low-Noise, 400MHz to 2.5GHz Downconverter M ixe , _ W ire le s s /R F P ro d u c ts Wireless/RF Products. Product T a b le ... OCR Scan
datasheet

1 pages,
43.55 Kb

TRANSISTOR RF 1049 R1075 Power-Amplifier MAX2102 MAX2406 MAX2410 MAX2411A MAX2420 MAX2421 MAX2422 MAX2426 MAX2460 MAX2463 MAX2510 MAX2102 abstract
datasheet frame
Abstract: CONTROL · BluetoothTM PA · 2.4GHz to 2.5GHz ISM Band Systems · 902MHz to 928MHz ISM Band Systems , Transistor (HBT) process, and has been designed for use as the final RF amplifier in 2.45GHz Bluetooth , z O z · 45% Efficiency at Max Output · On-Board Power Down Mode · 2.4GHz to 2.5GHz Operation · , , 250mW Amp with Analog Gain Con trol RF2172PCBA411 RF2172PCBA411 Fully Assembled Evaluation Board 2.4 to 2.5GHz , Without Input Match 0 ... OCR Scan
datasheet

2 pages,
128 Kb

RF2172 RF2172 abstract
datasheet frame
Abstract: (Pb-free) Finish 2.3GHz to 2.5GHz WiMAX Evaluation PCB 2.5GHz to 2.7GHz WiMAX Evaluation PCB Optimum , N/C Single 5.0V Power Supply 36dB Small Signal Gain (Typ.) RF OUT N/C Features RF , advanced InGaP Heterojunction Bipolar Transistor (HBT) process, and is provided in a leadless chip carrier , pHEMT Si CMOS Si BJT GaN HEMT RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling , ©2006, RF Micro Devices, Inc. Prelim DS090409 DS090409 7628 Thorndike Road, Greensboro, NC 27409-9421 · For ... Original
datasheet

2 pages,
68.81 Kb

rf transistor 2.5GHz HBT transistor GaAs RF5632 RF5632 abstract
datasheet frame
Abstract: 2.5GHz (IEEE802 IEEE802.11b/g/n and BT Class 1) bands. Operating from a single 1.8V to 3.6V supply, the , 2.5GHz Operation Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS , Power Supply 1.8V to 3.6V VCC Package Style: QFN, 8-Pin, 2.2mmx2.2mmx0.6mm 7 RF IN 1 6 N , @ , manufactured on an advanced InGaP Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process. The device ... Original
datasheet

2 pages,
78.89 Kb

2.4Gh RF5373PCBA-410 RF5373 bjt power amplifier Gan hemt transistor RFMD DSB070521 RF5373PCBA-41X IEEE802 HBT transistor GaAs 2.4GHz Power Amplifier transistor transistor BJT Driver RF5373 abstract
datasheet frame
Abstract: Transistor (HBT) pro cess, and has been designed for use as the final RF amplifier in 2.5GHz spread-spectrum , MICRO-DEVICES Typical Applications · 2.5GHz ISM Band Applications · PCS Communication Systems · Wireless LAN Systems 3V, 2.5GHz LINEAR POWER AMPLIFIER 2 · Commercial and Consumer Systems · , 2500MHz Frequency Range > Ordering Inform ation RF2163 RF2163 RF2163 RF2163 PCBA 3Vt 2.5GHz Linear Power Amplifier Fully Assembled Evaluation Board Functional Block Diagram RF Micro Devices, Inc. 7628 ... OCR Scan
datasheet

2 pages,
111.93 Kb

datasheet abstract
datasheet frame

Datasheet Content (non pdf)

Abstract Saved from Date Saved File Size Type Download
Over 1.1 million files (1986-2014): html articles, reference designs, gerber files, chemical content, spice models, programs, code, pricing, images, circuits, parametric data, RoHS data, cross references, pcns, military data, and more. Please note that due to their age, these files do not always format correctly in modern browsers. Disclaimer.
 
1/4 PRELIMINARY DATA Nov 2000 START499 START499 START499 START499 NPN Silicon RF Transistor SOT343 (SC70) ORDER BLUETOOTH @ 2.5GHz w DRIVER FOR 1W AND MORE PA w HIGH EFFICIENCY w HIGH GAIN w LINEAR AND NON Datasheet NPN SILICON RF TRANSISTOR START499 START499 START499 START499 Document Format Size Document Number Date Update Pages START499 START499 START499 START499 is a product of the START family that pro- vide the market with a Si state-of-art RF process.
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/7548.htm
STMicroelectronics 30/01/2001 6.46 Kb HTM 7548.htm
Amplifier Wide Rf bandwidth from 1.7GHz to 2.3GHz SOIC, T&R HFA3424 HFA3424 HFA3424 HFA3424 2.4GHz Low Noise Amplifier 14 dB gain, 1.9 dB noise figure SOIC, T&R HFA3524 HFA3524 HFA3524 HFA3524 2.5GHz/560MHz Dual Synthesizer Dual Modulus Prescaler WIRELESS PRODUCT SELECTION GUIDE PRISM TM Radio Chip Set Wireless Building Blocks Transistor Arrays Processor 16 Bit PN Code, 12dB processing gain, data rate up to 4 MBPS TQFP, T&R HFA3925 HFA3925 HFA3925 HFA3925 2.4GHz RF linear output power, Integrated Tx/Rx Switch SSOP, T&R TRANSISTOR ARRAYS (back to top
www.datasheetarchive.com/files/harris/comm/wireless-v1.htm
Harris 29/04/1998 11.65 Kb HTM wireless-v1.htm
SOIC, T&R HFA3524 HFA3524 HFA3524 HFA3524 2.5GHz/560MHz Dual Synthesizer PRISM TM Radio Chip Set Wireless Building Blocks Transistor Arrays 2.4GHz RF Power Amplifier P(1dB): +24dBm, Integrated T/R Switch SSOP Transistor Arrays (back to top ) Part # Configuration
www.datasheetarchive.com/files/harris/comm/wireless.htm
Harris 15/08/1997 11.47 Kb HTM wireless.htm
2.5GHz) is better than 2.0:1. Front-end input sensitivity To evaluate the front-end the LNA's first transistor input stage. Noise figure (NF) serves as a figure of merit for transistor (the Giacoleto model-see Figure 2 ) helps in understanding how this noise is generated. The base resistance (Rbb´) in a transistor is Vn(f) = 4kTRbb´, where Vn(f) equals the voltage current, q is one electron charge (1.6 . 10 -19 coulombs), and b is the transistor's DC current gain.
www.datasheetarchive.com/files/maxim/0008/view_047.htm
Maxim 04/04/2001 22.14 Kb HTM view_047.htm
input is a single-ended broadband port whose typical input VSWR (400MHz to 2.5GHz) is better than 2.0:1. figure in the down-conversion link is noise created by the LNA's first transistor input stage. Noise (also called Schottky noise). A detailed high-frequency equivalent model for the bipolar transistor (the thermal noise generated by parasitic base resistance (Rbb´) in a transistor is Vn(f) = 4kTRbb´, where Vn(f coulombs), and b is the transistor's DC current gain. Thus, the total noise spectral density generated by
www.datasheetarchive.com/files/maxim/0003/appno068-v1.htm
Maxim 02/05/2002 19.33 Kb HTM appno068-v1.htm
greater, and that the collector inductor must have a self resonant frequency of 2.5GHz or higher. Fig. 6 STB5600 STB5600 STB5600 STB5600 GPS RF FRONT-END IC Document Number: 6088 Date Update: 04/08/98 and Raw Text Format STB5600 STB5600 STB5600 STB5600 GPS RF FRONT-END IC n ONE CHIP SYSTEM TO INTERFACE ACTIVE ANTENNA Global Positioning System RF front-end. The chip provides down conversion from the GPS (L1) signal at a single external reference oscillator to generate both RF local oscillator signals and the
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/6088-v1.htm
STMicroelectronics 02/04/1999 12.39 Kb HTM 6088-v1.htm
greater, and that the collector inductor must have a self resonant frequency of 2.5GHz or higher. Fig. 6 STB5600 STB5600 STB5600 STB5600 GPS RF FRONT-END IC Document Number: 6088 Date Update: 04/08/98 and Raw Text Format STB5600 STB5600 STB5600 STB5600 GPS RF FRONT-END IC n ONE CHIP SYSTEM TO INTERFACE ACTIVE ANTENNA Global Positioning System RF front-end. The chip provides down conversion from the GPS (L1) signal at a single external reference oscillator to generate both RF local oscillator signals and the
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/6088-v2.htm
STMicroelectronics 14/06/1999 12.35 Kb HTM 6088-v2.htm
frequency of 2.5GHz or higher. Fig. 6 Reference Oscillator STB5600 STB5600 STB5600 STB5600 8/10 DIM. mm inch MIN. TYP. MAX. Datasheet GPS RF FRONT-END IC STB5600 STB5600 STB5600 STB5600 GPS RF FRONT-END IC n ONE CHIP SYSTEM TO INTERFACE ACTIVE ANTENNA TO ST20GP1 ST20GP1 ST20GP1 ST20GP1 MICROCONTROLLER Global Positioning System RF front-end. The chip provides down conversion from the GPS (L1) signal at uses a single external reference oscillator to generate both RF local oscillator signals and the
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/6088.htm
STMicroelectronics 20/10/2000 14.67 Kb HTM 6088.htm
have a self resonant frequency of 2.5GHz or higher. Fig. 6 Reference Oscillator STB5600 STB5600 STB5600 STB5600 8/10 Datasheet GPS RF FRONT-END 04/08/1998 10 Raw Text Format STB5600 STB5600 STB5600 STB5600 GPS RF Global Positioning System RF front-end. The chip provides down conversion from the GPS (L1) signal at uses a single external reference oscillator to generate both RF local oscillator signals and
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/6088-v3.htm
STMicroelectronics 25/05/2000 14.17 Kb HTM 6088-v3.htm
be used for other FSK modulation systems operating in a 2.4GHz to 2.5GHz the RF transceiver (Figure 1). The higher transmit-power level became part of the PA (Figure 1). The RF switch, the RF bandpass filter, and the connector contribute a (for example, SOIC-8 or MLP16 MLP16 MLP16 MLP16 housings). This PA approach provides only the RF signal path total RF module footprint is perhaps as small as 10mm x 14mm. 5 The circuit in Figure 3 will
www.datasheetarchive.com/files/maxim/0012/view_044.htm
Maxim 04/04/2001 34.92 Kb HTM view_044.htm