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ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73096RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73127RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
HFA3102B96 Intersil Corporation C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MS-012AB, MS-012AB, 14 PIN visit Intersil
HS0-6254RH-Q Intersil Corporation 5 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, DIE-16 visit Intersil

rf transistor mark code H1

Catalog Datasheet MFG & Type PDF Document Tags

MARKING W3 SOT23 TRANSISTOR

Abstract: rf transistor mark code H1 MPSH81 / MMBTH81 MPSH81 MMBTH81 C E C E TO-92 B SOT-23 Mark: 3D B PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector , CURRENT (mA) MPSH81 / MMBTH81 PNP RF Transistor (continued) Typical Characteristics , >> Find products >> PNP RF Transistor Contents ·General description ·Product status/pricing/packaging ·Order Samples ·Qualification Support General description PNP RF Transistor This device is designed for
Fairchild Semiconductor
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MARKING W3 SOT23 TRANSISTOR rf transistor mark code H1 transistor marking code ne SOT-23 marking code w2 sot23 pnp rf transistor sot23 Transistor marking p2

PN5179

Abstract: F63TNR PN5179 MMBT5179 C E C B TO-92 SOT-23 E C B E Mark: 3C TO-92 B NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers with collector , MPS5179 / MMBT5179 / PN5179 NPN RF Transistor pF SMALL SIGNAL CHARACTERISTICS fT Current Gain , TEMPERATURE (o C) 125 150 MPS5179 / MMBT5179 / PN5179 NPN RF Transistor (continued) Test , wire, 3/16 inch OD, 1/2 inch long 1000 pF MPS5179 / MMBT5179 / PN5179 NPN RF Transistor RFC
Fairchild Semiconductor
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F63TNR PN2222N MJC2 TRANSISTOR C 3223 CBVK741B019 PN/MPS5179

Transistor J310

Abstract: J309 MMBFJ309 MMBFJ310 J309 J310 G D G S TO-92 SOT-23 D S Mark: 6U / 6T N-Channel RF Amplifier This device is designed for VHF/UHF amplifier, oscillator and mixer applications , N-Channel RF Amplifier (continued) Typical Characteristics Transfer Characteristics Transfer , Transadmittance J309 / J310 / MMBFJ309 / MMBFJ310 N-Channel RF Amplifier (continued) Typical , / J310 / MMBFJ309 / MMBFJ310 N-Channel RF Amplifier (continued) Typical Characteristics
Fairchild Semiconductor
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Transistor J310 J309 J310 applications J310 j309 transistor J310 Application Note

transistor j210

Abstract: 212 t sot-23 G S G S TO-92 D SOT-23 Mark: 62V / 62W / 62X D NOTE: Source & Drain are interchangeable N-Channel RF Amplifier This device is designed for HF/VHF mixer/amplifier and applications , /MMBFJ210/J211/J212, Rev A J210 / J211 / J212 / MMBFJ210 / MMBFJ211 / MMBFJ212 N-Channel RF Amplifier , / J212 / MMBFJ210 / MMBFJ211 / MMBFJ212 N-Channel RF Amplifier (continued) Typical Characteristics , J210 / J211 / J212 / MMBFJ210 / MMBFJ211 / MMBFJ212 N-Channel RF Amplifier (continued) Typical
Fairchild Semiconductor
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transistor j210 212 t sot-23 J210-212 MMBFJ210-212 J210/J211/J212/MMBFJ210/J211/J212

6u sot-23

Abstract: J309 -92 SOT-23 D D Mark: 6U / 6T NOTE: Source & Drain are interchangeable N-Channel RF , J309 / J310 / MMBFJ309 / MMBFJ310 N-Channel RF Amplifier SMALL SIGNAL CHARACTERISTICS Re(yis , Transadmittance J309 / J310 / MMBFJ309 / MMBFJ310 N-Channel RF Amplifier (continued) Typical , Admittance J309 / J310 / MMBFJ309 / MMBFJ310 N-Channel RF Amplifier Capacitance vs. Voltage 5 , / J310 / MMBFJ309 / MMBFJ310 N-Channel RF Amplifier TO-92 Tape and Reel Data TO-92 Packaging
Fairchild Semiconductor
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J309-J310 6u sot-23 UA309 MMBFJ309-310

6u sot-23

Abstract: j310 equivalent -92 SOT-23 D D Mark: 6U / 6T NOTE: Source & Drain are interchangeable N-Channel RF , J309 / J310 / MMBFJ309 / MMBFJ310 N-Channel RF Amplifier SMALL SIGNAL CHARACTERISTICS Re(yis , Transadmittance J309 / J310 / MMBFJ309 / MMBFJ310 N-Channel RF Amplifier (continued) Typical , Admittance J309 / J310 / MMBFJ309 / MMBFJ310 N-Channel RF Amplifier Capacitance vs. Voltage 5 , / J310 / MMBFJ309 / MMBFJ310 N-Channel RF Amplifier TO-92 Tape and Reel Data TO-92 Packaging
Fairchild Semiconductor
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j310 equivalent 1175 yig oscillator J309 application note

212 s sot-23

Abstract: 62w sot-23 -92 SOT-23 D Mark: 62W / 62X D NOTE: Source & Drain are interchangeable N-Channel RF , RF Amplifier (continued) Typical Characteristics (continued) Transfer Characteristics , RF Amplifier Noise Voltage vs. Frequency 5 Transconductance vs. Drain Current Output , Transadmittance Reverse Transadmittance J211 / J212 / MMBFJ211 / MMBFJ212 N-Channel RF Amplifier , J211 / J212 / MMBFJ211 / MMBFJ212 N-Channel RF Amplifier Reverse Transadmittance 5 TO
Fairchild Semiconductor
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212 s sot-23 62w sot-23 J212 J211 transistor mark igf J211 TOP J211-212 MMBFJ211-212

rf transistor mark code H1

Abstract: CBVK741B019 MPSH24 / MMBTH24 MPSH24 MMBTH24 C E C B TO-92 B SOT-23 E Mark: 3A NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications , = 0 4.0 ICBO Collector Cutoff Current VCB = 15 V, IE = 0 MPSH24 / MMBTH24 NPN RF Transistor V 50 nA ON CHARACTERISTICS hFE DC Current Gain IC = 8.0 mA, VCE = 10 V 30 , 2 Ammo Pack Options D26Z Ammo AMMO PACK OPTION EOL code D75Z FSCINT Label
Fairchild Semiconductor
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MPSH11

CBVK741B019

Abstract: F63TNR MPSH24 / MMBTH24 MPSH24 MMBTH24 C E C B TO-92 B SOT-23 E Mark: 3A NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications , = 0 4.0 ICBO Collector Cutoff Current VCB = 15 V, IE = 0 MPSH24 / MMBTH24 NPN RF Transistor V 50 nA ON CHARACTERISTICS hFE DC Current Gain IC = 8.0 mA, VCE = 10 V 30 , 2 Ammo Pack Options D26Z Ammo AMMO PACK OPTION EOL code D75Z FSCINT Label
Fairchild Semiconductor
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CBVK741B019

Abstract: rf transistor mark code H1 RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications , , IC = 0 100 MPSH11 / MMBTH11 NPN RF Transistor nA ON CHARACTERISTICS hFE DC Current , Admittance vs Collector Voltage 8 MPSH11 / MMBTH11 NPN RF Transistor 3 g ie 8 b ie 4 0 , MPSH11 / MMBTH11 NPN RF Transistor (continued) 1000 b oe goe 100 10 V CE = 15V f , / MMBTH11 NPN RF Transistor 26 24 f IF = 45 MHz f O = 200 MHz f LO = 245 MHz V CE = 15V FIG. 1
Fairchild Semiconductor
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Q100 Z-235 D3000

transistor 26

Abstract: CBVK741B019 RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications , , IC = 0 100 MPSH11 / MMBTH11 NPN RF Transistor nA ON CHARACTERISTICS hFE DC Current , Admittance vs Collector Voltage 8 MPSH11 / MMBTH11 NPN RF Transistor 3 g ie 8 b ie 4 0 , MPSH11 / MMBTH11 NPN RF Transistor (continued) 1000 b oe goe 100 10 V CE = 15V f , / MMBTH11 NPN RF Transistor 26 24 f IF = 45 MHz f O = 200 MHz f LO = 245 MHz V CE = 15V FIG. 1
Fairchild Semiconductor
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transistor 26
Abstract: RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with , , f = 500 MHz 15 dB 30 mW 25 % PN918 / MMBT918 NPN RF Transistor (continued , PN918 / MMBT918 NPN RF Transistor (continued) (continued) Contours of Constant Gain , 125 150 10 PN918 / MMBT918 NPN RF Transistor (continued) Common Emitter Y Parameters , / MMBT918 NPN RF Transistor (continued) Common Emitter Y Parameters vs. Frequency Yre - REVERSE Fairchild Semiconductor
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erf5e

Abstract: ERF10E date code E Mark 2W 0.1 K s Pakaging Methods Contact factory pakaging methods Cautions for , applications such as protection of output transistor in AV equipment and current detection of switching power , ) L W ERF2E 14.0 ±1.0 Cement Terminal 4.0 ±0.5 H 8.0 ±1.0 H1 7.0 , environment such as RF circuit may cause abnormal phenomena due to oscillation or inductance. Check and
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erf5e ERF10E ERF2E

CBVK741B019

Abstract: F63TNR RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with , / MMBT918 NPN RF Transistor (continued) VCE = 5V 90 80 125 °C 70 60 25 °C 50 - , PN918 / MMBT918 NPN RF Transistor (continued) (continued) Contours of Constant Gain , 150 10 PN918 / MMBT918 NPN RF Transistor (continued) Common Emitter Y Parameters vs , NPN RF Transistor (continued) Common Emitter Y Parameters vs. Frequency Yre - REVERSE TRANS
Fairchild Semiconductor
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RF 107 transistor tc 144

mmbt918

Abstract: PN918 RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with , / MMBT918 NPN RF Transistor (continued) VCE = 5V 90 80 125 °C 70 60 25 °C 50 - , PN918 / MMBT918 NPN RF Transistor (continued) (continued) Contours of Constant Gain , 150 10 PN918 / MMBT918 NPN RF Transistor (continued) Common Emitter Y Parameters vs , NPN RF Transistor (continued) Common Emitter Y Parameters vs. Frequency Yre - REVERSE TRANS
Fairchild Semiconductor
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Intermediate frequency Semiconductor RF 14inch npn transistor wc

Z-235

Abstract: CBVK741B019 RF Transistor This device is designed for general RF amplifier and mixer applications to 250 MHz , Collector Cutoff Current VCB = 15 V, IE = 0 MPSH20 / MMBTH20 NPN RF Transistor V 50 nA ON , MPSH20 / MMBTH20 NPN RF Transistor (continued) Common Emitter Y Parameters Input Admittance vs , Admittance vs Collector Current MPSH20 / MMBTH20 NPN RF Transistor 8 b ie 0 10 50 100 f , ) 400 MPSH20 / MMBTH20 NPN RF Transistor (continued) Test Circuits T1 50 Output
Fairchild Semiconductor
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Ohmite RF transistor mark code t1 MPS-H20

transistor bel 100

Abstract: CBVK741B019 RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector , / MMBTH10 NPN RF Transistor nA V ON CHARACTERISTICS hFE DC Current Gain IC = 4.0 mA, VCE , ) 125 150 MPSH10 / MMBTH10 NPN RF Transistor (continued) Common Base Y Parameters vs , MPSH10 / MMBTH10 NPN RF Transistor 8 VCE = 10V 6 I C = 5 mA 3 4 -b rb 2 -g rb , (MHz) 1000 MPSH10 / MMBTH10 NPN RF Transistor (continued) Test Circuits 2.0 K 10
Fairchild Semiconductor
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transistor bel 100 PAP transistor power high frequency
Abstract: PN918 / MMBT918 PN918 MMBT918 C E C B TO-92 E SOT-23 Mark: 3B B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector , on FR-4 PCB 1.6" X 1.6" X 0.06." 1997 Fairchild Semiconductor Corporation NPN RF Transistor , / MMBT918 NPN RF Transistor (continued) Typical Characteristics (continued) f T - GAIN , RF Transistor (continued) Common Emitter Y Parameters vs. Frequency Input Admittance vs Fairchild Semiconductor
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MPSH10 s parameters

Abstract: RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector , , IC = 0 100 MPSH10 / MMBTH10 NPN RF Transistor nA V ON CHARACTERISTICS hFE DC , ) 125 150 MPSH10 / MMBTH10 NPN RF Transistor (continued) Common Base Y Parameters vs , / MMBTH10 NPN RF Transistor 8 6 b ob 4 g ob 2 0 100 200 500 f - FREQUENCY (MHz , (MHz) 1000 MPSH10 / MMBTH10 NPN RF Transistor (continued) Test Circuits 2.0 Kâ"¦ â
Fairchild Semiconductor
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MPSH10 s parameters

MPSH10 fairchild transistor

Abstract: MPSH10 RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector , / MMBTH10 NPN RF Transistor nA V ON CHARACTERISTICS hFE DC Current Gain IC = 4.0 mA, VCE , ) 125 150 MPSH10 / MMBTH10 NPN RF Transistor (continued) Common Base Y Parameters vs , MPSH10 / MMBTH10 NPN RF Transistor 8 VCE = 10V 6 I C = 5 mA 3 4 -b rb 2 -g rb , (MHz) 1000 MPSH10 / MMBTH10 NPN RF Transistor (continued) Test Circuits 2.0 K 10
Fairchild Semiconductor
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MPSH10 fairchild transistor transistor top mark 3E L MMBTH10 Spice Model transistor mark code RB BF308
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