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Part Manufacturer Description Datasheet BUY
LT3742EUF#TRPBF Linear Technology LT3742 - Dual, 2-Phase Step-Down Switching Controller; Package: QFN; Pins: 24; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT3742EUF#PBF Linear Technology LT3742 - Dual, 2-Phase Step-Down Switching Controller; Package: QFN; Pins: 24; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

rf transistor 3742

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: BLY91A I V i. V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in , 28 V . The transistor is resistance stabilized and is guaranteed to withstand severe load mismatch , IC K R E FER EN C E D A T A R.F. performance up to T m b = 25 °C in an unneutralized common-emitter , ~~33~°7 BLY91A V .H .F . power transistor J V C H A R A C T E R IS T IC S Tj = 25 °C , V .H .F . power transistor HI inbSBc ]31 o o m ia o ' d 'T '3 3 -6 ? BLY91A 15 R E -
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53T31 T-33-

low noise hemt

Abstract: transistor hemt FHX35LG is a High Electron Mobility Transistor(HEMT) intended for general purpose, low noise and high gain , Voltage Noise Figure Associated Gain Thermal Resistance AVAILABLE CASE STYLES: LG Note: RF parameters are , , IDS = 10mA S21 S12 MAG ANG MAG ANG 4.576 4.548 4.471 4.304 4.026 3.742 3.436 3.132 2.881 2.659 2.497
Eudyna Devices
Original
low noise hemt transistor hemt transistor HEMT GaS rf transistor 3742 2-18GH

FHX35LG

Abstract: FHX35LP DESCRIPTION The FHX35LG is a High Electron Mobility Transistor(HEMT) intended for general purpose, low noise , STYLES: LG Note: RF parameters are measured on a sample basis as follows: 1200 1201 3201 10001 , 44.6 .483 -54.9 4000 .867 -84.0 3.742 103.1 .071 31.8 .462 -71.9
Eudyna Devices
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FHX35LP WG 924 FHX35

low noise hemt

Abstract: lg s12 DESCRIPTION The FHX35LG is a High Electron Mobility Transistor(HEMT) intended for general purpose, low noise , STYLES: LG Note: RF parameters are measured on a sample basis as follows: 1200 1201 3201 10001 , .912 -64.6 4.026 121.0 .059 44.6 .483 -54.9 4000 .867 -84.0 3.742
Fujitsu
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lg s12 PT 4304 a transistor fujitsu hemt FCSI0598M200
Abstract: DESCRIPTION The FHX35LG is a High Electron Mobility Transistor(HEMT) intended for general purpose, low noise , AVAILABLE CASE STYLES: LG Note: RF parameters are measured on a sample basis as follows: 1200 1201 , 121.0 .059 44.6 .483 -54.9 4000 .867 -84.0 3.742 103.1 .071 31.8 Eudyna Devices
Original

CGH40090PP

Abstract: CGH4009 PRELIMINARY CGH40090PP 90 W, RF Power GaN HEMT Cree's CGH40090PP is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40090PP, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs , linear and compressed amplifier circuits. The transistor is available in a 4-lead flange package , °C PDISS = 86 W DC Characteristics2 RF Characteristics3,7 (TC = 25°C, F0 = 2.0 GHz unless
Cree
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CGH4009 CGH40090PP-TB 10UF

7804 regulator

Abstract: AFT-10136 junction of the input transistor of a Darlington pair to act as an unbalanced mixer. The RF signal is , (low noise block converter) for the C band (3.7-4.2 GHz) TVRO market. The block converter consists of a , appropriate. The RF portion of the design uses device catalog S and noise parameters and the linear analysis , . Interstage matches transfer s22 of each drive transistor to opt for its load transistor. The output circuit , inductors using the gate leads of the packaged FETs. The finished RF schematic is shown in Figure 1. A
Hewlett-Packard
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7804 regulator AFT-10136 S parameters for ATF 10136 ATF10236 MSF8885 AFT-10236 AN1091 ATF-36163 5965-1235E AN1136 5966-2488E AN1139

REGULATOR IC 7804

Abstract: AN-A007 This note describes the design of a modern LNB (low noise block converter) for the C band (3.7-4.2 GHz , figure, so an ATF-10736 is most appropriate. The RF portion of the design uses device catalog s and noise , perform ance is to be obtained. Interstage matches transfer s22 of each drive transistor to r opt for its load transistor. The output circuit matches the 50 Q load impedance to s22 * of the AFT-10736 for best , , open stub tuners, and series induc tors using the gate leads of the packaged FETs. The finished RF
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AN-A007 REGULATOR IC 7804 AVANTEK MSA-0885 AVANTEK AN-A001 avantek application note AN-A001 avantek ATF-10236 ATF-10136 AN-A001 AN-S005 5091-8825E

FHX35LP

Abstract: FHX35LG Mobility Transistor(HEMT) intended for general purpose, low noise and high gain amplifiers in the 2-18GHz , STYLES: LG/LP Note: RF parameters for LG/LP devices are measured on a sample basis as follows: 1200 , .867 -84.0 3.742 103.1 .071 31.8 .462 -71.9 5000 .821 -101.6 3.436
Fujitsu
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FHX35LG/LP
Abstract: Wideband Amplifiers · RF/IF Signal Processing · Medical Imaging Systems Ordering Information PART , 3 3-219 File Number 3742 Specifications HFA1212/883 Absolute Maximum Ratings Voltage , WORST CASE CURRENT DENSITY: TBD TRANSISTOR COUNT: 150 SUBSTRATE POTENTIAL (Powered Up): Floating -
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MIL-STD883 340MH T/50Q MIL-STD-883

FHX35LG

Abstract: FHX35LP Transistor(HEMT) intended for general purpose, low noise and high gain amplifiers in the 2-18GHz frequency , °C/W AVAILABLE CASE STYLES: LG/LP Note: RF parameters for LG/LP devices are measured on a sample , .043 57.9 .498 -38.0 3000 .912 -64.6 4.026 121.0 .059 44.6 .483 -54.9 4000 .867 -84.0 3.742 103.1
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1 987 280 103 4000Q
Abstract: ideband Amplifiers â'¢ RF/IF Signal Processing â'¢ Medical Imaging Systems Pinout HFA1212/883 ,   3 2 ig Sp6C Number 511111 "883 File Number 3742 OPERATIONAL AMPLIFIERS â'¢ Fast Slew R , DENSITY: TBD TRANSISTOR COUNT: 150 SUBSTRATE POTENTIAL (Powered Up): Floating (Recommend Connection to -
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UT/50
Abstract: Wideband Amplifiers RF/IF Signal Processing Medical Imaging Systems Pinout HFA1212/883 (CERDIP) TOP , -¿ I y Spec Number File 511111-883 Number 3742 Specifications HFA1212/883 Absolute , DENSITY: TBD TRANSISTOR COUNT: 150 SUBSTRATE POTENTIAL (Powered Up): Floating (Recommend Connection to -
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OUT/50

FET BFW 43

Abstract: MPSA 506 transistor -39 600 100 140 50 150 50 10 0.5 50 150 10 2N 3742 N TO-39 1000 100 300 20 200 30 10 1 10 30 6 2N 3743 N , "t> ALL DIMENSIONS IN mm 69 â  -r-f/'j. MICRO ELECTRONICS CORP SED D | LDTITflà , .S4. f - 1 1 si rJiV LEAD COPE I 1 I 2 1 3 TRANSISTOR E B O FET 8 ID G TO-IB PHOTO TRANSISTOR
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FET BFW 43 MPSA 506 transistor TRANSISTOR BC 157 TRANSISTOR BC 530 BFT58 transistor BF 298 BCW-50 MELF-005 MT-12 S40/S-

trw RF POWER TRANSISTOR

Abstract: trw transistors . 1-380 1-381 1-383 APPLICATIONS NOTES 1 â'" RF transistor reliabilityâ'" Reliability and MTF â , efficiency transistor. FM v QUALITY AT TRW TRW RF components are renowned for quality and , TR W RF SEMICONDUCTORS CATALOG 1981 EUROPEAN EDITION TABLE OF CONTENTS Pages â'¢ â , . 3 â'" Reliability considerations in design and use of RF integrated circuits , â'" 1.2 V, 40-900 MHz broadband amplifier with the TP 3 400 transistor. 11 â
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trw RF POWER TRANSISTOR trw transistors trw rf transistor LT 9228 2023-12 trw 131* RF POWER TRANSISTOR

VON100

Abstract: VOP100 Wideband Amplifiers · RF/IF Signal Processing · Medical Imaging Systems Pinout HFA1212/883 (CERDIP , File Number 3742 Spec Number Specifications HFA1212/883 Absolute Maximum Ratings Thermal , TRANSISTOR COUNT: 150 SUBSTRATE POTENTIAL (Powered Up): Floating (Recommend Connection to V
Harris Semiconductor
Original
VON100 VOP100 VOUT/50

VON100

Abstract: VOP100 Wideband Amplifiers · RF/IF Signal Processing · Medical Imaging Systems Pinout HFA1212/883 (CERDIP , File Number 3742 Spec Number Specifications HFA1212/883 Absolute Maximum Ratings Thermal , TRANSISTOR COUNT: 150 SUBSTRATE POTENTIAL (Powered Up): Floating (Recommend Connection to V
Harris Semiconductor
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VON100

Abstract: VOP100 PACKAGE -55oC to +125oC 8 Lead CerDIP · Wideband Amplifiers · RF/IF Signal Processing · Medical , | Copyright © Intersil Corporation 1999 3-219 511111-883 File Number 3742 Spec Number , : Nitride Thickness: 4kÅ ± 0.5kÅ WORST CASE CURRENT DENSITY: TBD TRANSISTOR COUNT: 150 SUBSTRATE
Intersil
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ISO9000

oz 9939

Abstract: CGH21120F-TB a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high , WCDMA and LTE amplifier applications. The transistor is supplied in a ceramic/metal flange package , 100 ­ VDC VGS = -8 V, ID = 28.8 mA DC Characteristics1 RF Characteristics (TC = 25 , load pull data derived from transistor. Copyright © 2008-2009 Cree, Inc. All rights reserved. The , 0.0031 37.42 0.849 166.19 5.2 GHz 0.9968 -141.43 0.14 26.07 0.0025 35.50
Cree
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CGH21120F CGH2112 CGH21120F-TB oz 9939 ATC600F 17040 atc600s 09391

CASE353-01

Abstract: TRANSISTORS 25, 50 and 100 Ampere Operating Current NPN SILICON POWER DARLINGTON TRANSISTOR 250, 450 and , tOO'C - IC»B 55 25 Vfl E Í0 F F I = 5.0 V i 200 i I Ì 150 , -C u rren tLim rf -T h w m a , ond breakdown. Safe operating area curves indicate ·c - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the , of the transistor has been factored into the curve. There fore, with bus voltage and maximum
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CASE353-01 MJ10041 MJ10044 MJ10047 96D81008 MJE150291 MJE15028
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