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Part Manufacturer Description Datasheet BUY
61646TU Integrated Device Technology Inc WAFER-0, Wafer visit Integrated Device Technology
SN761643 Texas Instruments RF/Microwave Amplifier, RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER, PLASTIC, MO-187, MSOP-8 visit Texas Instruments
SN761647DBTR Texas Instruments Digital TV Tuner IC SN761647 38-TSSOP -40 to 85 visit Texas Instruments
SN761643DGKR Texas Instruments AGC Amplifier 8-VSSOP -20 to 85 visit Texas Instruments

ram 6164

Catalog Datasheet MFG & Type PDF Document Tags

74c920

Abstract: ram 6164 h a r r is c m o s ram s DESCRIPTION HARRIS Industry CMOS RAM Cross Reference AMD EDI FUJ ITSU HIT ACHI IDT M ITSU MOT BISHI OROLA N A T IONAL NEC OKI RCA SMOS TOSH , * 8464 6264 7164 7M864 8M864 5164 6164 6164 4464 6264 2064 2264 5564 5565 128K CMOS RAM MODULE 16Kx8, 28 Pin Asynchronous H M -8816H * 8816H 256K CMOS RAM MODULE 32Kx8 , * 8832 1M CMOS MODULE 128x8/64Kx16 * C M O S RAM M o d u le H M -91M 2* I CMOS M EM O R Y
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74C929 74C930 99C88 74c920 ram 6164 6116 RAM 2116 ram 2064 ram HM-6508 HM-6518 HM-6551 HM-6561

4464 ram

Abstract: us4k HARR IS AM O In d u s try CMOS RAM C ross R eference F U J IEDI rrsu H IT AC H I ID T M , * 99C 88 8808A 8808 8464 6264 7164 7M 864 S M 664 5164 8184 6164 4464 8264 2064 2264 5564 5585 1 28 K CM O S RAM M O D U LE 16K x 8, 2 8 Pin A s y n c h ro n o u s H M -8 8 1 6 H 8816H 2 5 6 K CM O S RAM M O D U LE 32K x 8 / 1 6K x 16 48 Pin M o d u le A s y n c h ro n
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4464 ram us4k 6508 ram 4464 memory 6116 ram 2k 91L24

6164 ram memory

Abstract: intel 6164 ram base memory is 128KB video RAM, 64KB LIM pages and 128KB system BIOS. The extended memory can be 1M, 2M , Bank 1 OFFFFF 0E0000 09FFFF 000000 RAM Diagnostic & Relocation Register Not Used Relocated BIOS Not Used 2M-3M 1M-2M System BIOS 128KB Video RAM & 64KB LiM Pages DOS Base Memory 384K 1M 1M , regions marked "not used" and video ram and lim pages. 6-158 | 5 This Material Copyrighted By Its , 100000 OFFFFF 0E0000 09FFFF 000000 RAM Diagnostic & Relocation Register Not Used Relocated BIOS Not
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UM82C384 6164 ram memory intel 6164 ram internal diagram of 7473 pin configuration of intel 80386 Unicorn Microelectronics PA10 TE707 A20GATE CAS11 T-5S-33
Abstract: PORT2 14-17 P20-P23 PORT3 5-8 P30-P33 PORT4 1-4 P40-P43 PORT5 61-64 P50-P53 , 8064x8-BIT RAM 512x4-BIT WATCH TIMER INTW 29 AVDD 30 AVREF+ 31 AVREF 40 AGND 32-39 -
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UPD75048GC-508-AB8 SB1/SI/P03 SB0/SO/P02 SCK/P01 INT4/P00 BUZ/P23
Abstract: -64A) Features â'¢ 8192 word x 10 bit ROM Pin Arrangement â'¢ 512 digit x 4 bit RAM â'¢ 48 I/O pins and 4 , pull-down MOS. ROO-R73 1-20, 47-54, 61-64 I/O Input/output ports accessed with 4 -
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HD404678 HMCS400- FP-64A R33/INT1 R62/INT2 R63/INT3

74LS471

Abstract: ram 6164 PAL16L8B 74373 74521 74533 74373 74651 1 3 2 1 3 1 4 Memory Static Buffer Ram 256 x 8 ROM 6164 74LS471 2 1 2 Other Qty 3 MacIntosh II Ethernet Adapter Card TL F
National Semiconductor
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6164 ram sram 6164 sram 6164 datasheet 6164 memory 6164 sram cd 74373 SB-108
Abstract: P30/MD0-P33/MD3 PORT4 1-4 P40-P43 PORT5 61-64 P50-P53 PORT6 57-60 P60-P63 , RAM 512x4-BIT WATCH TIMER INTW 29 AVDD 30 AVREF+ 31 AVREF 40 AGND 32-39 AN0-AN7 -
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UPD75P036GC-AB8 P33/MD3 P32/MD2 P31/MD1 P30/MD0 PCL/P22

ram 6164

Abstract: 6164 ram NJU3430 NJU3430 16 1 ROM/RAMRAM RAM ROM/RAM RAM RAM CPU 1MHz CPU RAM RAM NJU3430FG1 +1 +1 ROM 8,400 5 × 7 240 8,4005 7 , RAM 35 × 8 , RAM 8 16 16 35 NJU3430 NJU3430 16 1 3 2 1LED 1 LED 16 1 RAM RAM 16 × 8 16 1 ROM 8,400 5 × 7240 5 RAM 35 × 8 5 × 78 5 RAM 16 × 2 32 =45V) ( V DD -V FDP =45V) ( 16
New Japan Radio
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QFP64 cg00 25QFP-64

epd driver ic

Abstract: epd driver 8K-word ROM, 2K-word RAM EPD Driver IC Power Supply Circuit Multiply-Divide Circuit Low Current , high-performance 4-bit CPU S1C63000 as the core CPU, ROM (8,192 words × 13 bits), RAM (2,048 words × 4 bits , 122 sec 1.0 sec 183 sec 1.5 sec RAM capacity , OSC2 OSC3 OSC4 Interrupt Generator OSC Clock Timer RAM 2,048 words × 4 bits VDD VD1 , (selected by software) Output port pins R10­R13 57­60 O P00­P03 61­64 I/O I/O port
Seiko Epson
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S1C63808 epd driver ic epd driver capacitor 30 pf Epson EPD controller OSC4

ram 6164

Abstract: 6164 ram NJU3430 NJU3430 16 1 ROM/RAMRAM ROM/RAM RAM RAM RAM CPU 1MHz CPU RAM RAM NJU3430FG1 +1 +1 ROM 8,400 5 × 7 240 8,4005 7 , RAM 35 × 8 , RAM 8 16 16 35 NJU3430 NJU3430 16 1 3 2 1LED 1 LED 16 1 RAM RAM 16 × 8 16 1 ROM 8,400 5 × 7240 5 RAM 35 × 8 5 × 78 5 RAM 16 × 2 32 ( V DD -V FDP =45V) ( =45V) 16
New Japan Radio
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D5101LC-1 RAM

GPLB32A

Abstract: R32768 . 9 6.16.4. Low voltage reset , :0], PD[5:0]) bytes working RAM, 512K bytes ROM, 8 I/Os, interrupt/wakeup . Dedicated I/Os: PA , 8 64 segments, 32 commons, maximum 2048 dots 6 8-bit 1216 bytes RAM 1/5, 1/6 bias; 1 , dedicated LCD RAM Built-in voltage regulator to generate VLCD for LCD driver (I/O) PA[7:0] PB[5:0] PC[7:0] PD[5:0] LCD RAM 296 bytes 32 Com m ons X 74 Segm ents LCD Driver 32-level contrast
Generalplus Technology
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GPLB32A3 GPLB32A R32768 SEG73-0 GPLB C000-C7FF 512KB

404678H

Abstract: -digit x 4-bit RAM · 48 I/O pins and four dedicated input pins - 16 large-current output pins: Ten 15 , , 61-64 I/O R8 0 - R 8 3 42-45 I Interrupt INT0, INT t in t2 > in t3 SCKA, SC KB SIA , 512 · 4-bit RAM Stack pointer Instruction decoder -N ÏL ZZ zz X (4) W (2
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404678H CS400 HD404676 N/R82

Si3220/Si3225

Abstract: Si3225 performance. Pins 1, 3, 4, 8, 9, 13, 14, 16­20, and 61­64 are sensitive current input pins that are , Registers and RAM Si3220/Si3225 Clock Requirements The Si3220/Si3225 programmable function is powered by , -bit RAM locations of the Si3220/Si3225 will initialize to 0x0000 following a reset. The RAM must be initialized with functional values to prepare the Si3220/Si3225 for operation. Refer to the RAM listing in AN58 for example RAM location values. Refer to the data sheet or ProSLIC LINC software for calculation
Silicon Laboratories
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Si3225 si-3200 an5504 AN55 AN58 Si322x 3220/S

2114 Ram pinout 18

Abstract: MWS5114 MWS5114 S E M I C O N D U C T O R 1024-Word x 4-Bit LSI Static RAM March 1997 Features Description · Fully Static Operation The MWS5114 is a 1024 word by 4-bit static random access memory that uses the ion-implanted silicon gate complementary MOS (CMOS) technology. It is designed for use in memory systems where low power and simplicity in use are desirable. This type has common data input and , 25oC and nominal VDD. 6-164 MWS5114 tRC tAA ADDRESS CS tCO tOTD tCX DOUT
Harris Semiconductor
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MWS5114E3 MWS5114E2 MWS5114E2X MWS5114E1 MWS5114D3 MWS5114D3X 2114 Ram pinout 18 MWS5114-3 MWS5114D1 MWS5114D2 1024-W

BU9794KV

Abstract: BU9799KV which is suitable for multi function display and is integrated display RAM and power supply circuit for , ) Driver Feature (BU9794KV) 1) 3wire serial interface (CSB, SD, SCL) 2) Integrated RAM for display , 2 1 11-60 61-64 I I I SD SCL CSB VSS VDD VLCD SEG0-49 COM0-3 O O Function , transfer method. C 0 Next byte is RAM write data. 1 Next byte is command. Mode Set (MODE SET) MSB D7 , Transfer format Write display data and transfer method This device has Display Data RAM (DDRAM) of
ROHM
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BU9799KV bu9794 p4 power supply 50SEG
Abstract: which is suitable for multi function display and is integrated display RAM and power supply circuit for , Feature (BU9794KV) 1) 3wire serial interface (CSB, SD, SCL) 2) Integrated RAM for display data (DDRAM) 50 , 6 5 3 2 1 11-60 61-64 I I I I I I I Function Input terminal for turn off display H: turn on , data judgment. Refer to Command and data transfer method. C 0 Next byte is RAM write data. 1 Next byte , method This device has Display Data RAM (DDRAM) of 50×4=200bit. The relationship between data input ROHM
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Abstract: MWS5114 Semiconductor 1024-Word x 4-Bit LSI Static RAM March 1997 Features Description â'¢ Fully Static Operation The M W S5114 is a 1024 word by 4-bit static random access memory that uses the ion-implanted silicon gate com ple­ mentary MOS (CMOS) technology. It is designed for use in memory systems where low power and simplicity in use are desirable. This type has common , nominal V q q . 6-164 MWS5114 NOTE: 1. W E is high during the Read Cycle. Tim ing m easurem ent -
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S5114E3 S5114E2 S5114E2X S5114D3 S5114D3X S5114D2

2N6161

Abstract: 2N6165 6157, 2N 6160, 2N 6163 2N 6158, 2N 6161, 2N 6164 2N 6159, 2N 6162, 2N 6165 · P e a k G a te V o lta g e , inal 1. F IG U R E 1 - RM S C U R R E N T D E R A T IN G Symbol ·DRM. 'RAM Min - Typ 1.5
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2N6157 2N6165 2N6161 2N6162 2N6164 2N6163 2n6160 2N6145-47 2N5S71

E2PROM

Abstract: ASM51 addressable RAM byte 2. FUNCTION DESCRIPTIONS The functions that use write and/or erase actions are , (TI) and rcv-interrupt flag (RI). January 1992 6-164 Philips Semiconductors Application , write a block of data from internal RAM to E2PROM. Byte transfer is done on interrupt basis. The status , ; source byte in RAM is not 0x00 Tprog = A.tW+B.(tE+tW) B: Byte in E2PROM is not 0x00; source byte in RAM E2PROM byte If a ROW-erase is done, programming the ROW will take: C: Source byte in RAM `0' Tprog
Philips Semiconductors
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ASM51 E2PROM EIE/AN91009 PL/M-51 OM4142 PL/M51 OM4144

GPLB32A

Abstract: GPLB31A ] . 15 6.16.4. PC[4:7]/SEG[73:70]/COM[25:22 , bytes working RAM, 512K bytes OTP memory, 30 I/Os, GPLB37. interrupt/wakeup controller, UART for , series via options. Body selected ALL GPLB30A RAM Size 4288 Bytes OTP Size 512K Bytes , ,1/16 1/16, 1/32 1/16 LCD RAM 296 Bytes 148 Bytes 296 Bytes 104 Bytes 96*8 , /F 8-bit 8 BEX/PB7-0 MC10/PC1-0 2 micro-processor 4288 bytes RAM 8 Max.30 I
Generalplus Technology
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GPLB301A GPLB31A GPLB301 2368D cpu sda 2600 GPLB33B LB31A
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