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LTC1536CMS8#TR Linear Technology LTC1536 - Precision Triple Supply Monitor for PCI Applications; Package: MSOP; Pins: 8; Temperature Range: 0°C to 70°C visit Linear Technology - Now Part of Analog Devices Buy
LTC1643AL-1IGN Linear Technology LTC1643A - PCI-Bus Hot Swap Controller; Package: SSOP; Pins: 16; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LTC1536IS8#TR Linear Technology LTC1536 - Precision Triple Supply Monitor for PCI Applications; Package: SO; Pins: 8; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LTC1643ALCGN#TR Linear Technology LTC1643A - PCI-Bus Hot Swap Controller; Package: SSOP; Pins: 16; Temperature Range: 0°C to 70°C visit Linear Technology - Now Part of Analog Devices Buy
LTC4242IG#TR Linear Technology LTC4242 - Dual Slot Hot Swap Controller for PCI Express; Package: SSOP; Pins: 36; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LTC1536CS8#TRPBF Linear Technology LTC1536 - Precision Triple Supply Monitor for PCI Applications; Package: SO; Pins: 8; Temperature Range: 0°C to 70°C visit Linear Technology - Now Part of Analog Devices Buy

radar circuit component

Catalog Datasheet MFG & Type PDF Document Tags

radar sensor

Abstract: microwave RADAR motion sensors DATA SHEET Radar based motion detector module RADAR-IPM-165 Description Description , '¢ Innovative Radar operating principle: â'¢ High sensitivity on slightest movement â'¢ Ideal for motion , Alarm and safety applications OEM applications in automotive Technical Data Description Radar , 24.250 GHz F: 24.075 . 24.175 GHz The radar module has been developed to cater for majority of the , difference with respect to the background, the radar module responds to all movements in the direction of the
B+B Thermo-Technik
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radar sensor microwave RADAR motion sensors D-78166
Abstract: -200P_LS-200P Product data sheet Component layout for a class-AB production test circuit All information provided , transistor Table 9. List of components test circuit See Figure 2. Component Description Value , of components. Fig 3. Component layout for a class-AB application circuit Table 10. List of components application circuit See Figure 2. Component Description Value Remarks multilayer , Semiconductors LDMOS S-band radar power transistor 7.5.2 Application circuit VDS = 32 V; IDq = 50 mA; tp NXP Semiconductors
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BLS7G2730L-200P BLS7G2730LS-200P 2002/95/EC BLS7G2730L

radar sensor

Abstract: RSM3650 DATA SHEET Radar based motion detector module RSM3650 Description Characteristic features â'¢ Universal HF-module (K-Band Transceiver), without NF-Signal amplifier â'¢ Innovative Radar operating , Ordering number The Radar module has been developed to cater for majority of the requirements which are , to the background, the radar module responds to all movements in the direction of the sensor. With , . Radar module works through many materials, e.g. plastics, hence vandalism safe, hidden installation is
B+B Thermo-Technik
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Abstract: S-band radar power transistor 7.3 Test circuit information Printed-Circuit Board (PCB): Rogers , BLS7G2729L-350P; BLS7G2729LS-350P LDMOS S-band radar power transistor Rev. 5 â'" 16 May 2014 , radar applications in the frequency range from 2.7 GHz to 2.9 GHz. Table 1. Typical performance , production test circuit. pulsed RF f VDS PL Gp D tr tf (GHz) Test signal ,  S-band radar applications in the frequent range 2.7 GHz to 2.9 GHz BLS7G2729L(S)-350P NXP NXP Semiconductors
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LS-350P

475 50K

Abstract: 475 50K 608 DISCRETE SEMICONDUCTORS DATA SHEET M3D381 BLL1214-35 L-band radar LDMOS driver , L-band radar LDMOS driver transistor FEATURES BLL1214-35 PINNING - SOT467C · High power gain , , connected to flange APPLICATIONS 1 · L-band radar applications in the 1200 to 1400 MHz frequency , = 25 °C in a common source test circuit. Pulsed class-AB; t = 1 ms; = 10 % f (MHz) VDS , °C 2002 Sep 27 2 Philips Semiconductors Product specification L-band radar LDMOS
Philips Semiconductors
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475 50K 475 50K 608 ATC100A ATC100B 1200 - 1400 MHz L-Band Applications MBK584 SNW-EQ-608 SNW-FQ-302A SNW-FQ-302B SCA74

ATC100A

Abstract: DISCRETE SEMICONDUCTORS DAT M3D381 BLL1214-35 L-band radar LDMOS driver transistor Product specification 2002 Sep 27 Philips Semiconductors Product specification L-band radar , ï¬'ange APPLICATIONS 1 â'¢ L-band radar applications in the 1200 to 1400 MHz frequency range. 3 , source test circuit. Pulsed class-AB; t = 1 ms; δ = 10 % f (MHz) VDS (V) PL (W) Gp , 2002 Sep 27 2 Philips Semiconductors Product specification L-band radar LDMOS driver
Philips Semiconductors
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Types of Radar Antenna

Abstract: radar system with circuit diagram transceiver. While this component is intended to be an element of the miniaturized radar electronics module , IPN Progress Report 42-158 August 15, 2004 Design and Performance of a Miniature Radar L-Band Transceiver D. McWatters,1 D. Price,2 and W. Edelstein1 Radar electronics developed for past , of future radar missions, a "generic" radar module was conceived. The module includes a 1.25 , L-band radar. For very large aperture phased-array spaceborne radar missions, the large dimensions of
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Types of Radar Antenna radar system with circuit diagram BPF filter rf radar frontend chip ghz diagram radar circuit tp 4056 25-GH

BLS6G3135S-120

Abstract: BLS6G3135-120 . Component layout for 3.1 GHz to 3.5 GHz MHz test circuit Table 9. List of components (see Figure 10) To , BLS6G3135-120; BLS6G3135S-120 LDMOS S-Band radar power transistor Rev. 02 - 29 May 2008 , for radar applications in the 3.1 GHz to 3.5 GHz range. Table 1. Typical performance Typical RF performance at Tcase = 25 °C; tp = 300 µs; = 10 %; IDq = 100 mA; in a class-AB production test circuit , Hazardous Substances (RoHS) BLS6G3135-120; BLS6G3135S-120 NXP Semiconductors LDMOS S-Band radar
NXP Semiconductors
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6G3135S-120

ATC200B

Abstract: BLL1214-250 DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLL1214-250 L-band radar LDMOS , Product specification L-band radar LDMOS transistor BLL1214-250 FEATURES PINNING - SOT502A , inductance. 3 source, connected to flange APPLICATIONS handbook, halfpage · L-band radar , . QUICK REFERENCE DATA RF performance at Th = 25 °C in a common source test circuit. MODE OF OPERATION , L-band radar LDMOS transistor BLL1214-250 THERMAL CHARACTERISTICS SYMBOL PARAMETER
Philips Semiconductors
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ATC200B mld865 MBK394

LM2291

Abstract: loral coaxial switch VOLUME NO. 13 1997 For Radar Applications, National Delivers M ilitary and aerospace , high-performance components for their construction. Regardless of the radar's task - terrestrial or space-based , that build these radars. This Radar Silicon Solution represents a generic radar application with , For Radar Applications, National Delivers, page 1 INDUSTRY ISSUE Can Emerging IEEE Test Standards , , Dot1 focuses on digital signals on isolated printed circuit cards. Dot1 defines a 4-wire (optionally
National Semiconductor
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LM2291 loral coaxial switch missile Microwave Radar Seekers MICRON POWER RESISTOR MLS national linear application notes book andrews microwave antenna F100K
Abstract: S-band radar power transistor Fig 1. Definition of transistor impedance 7.3 Test circuit , BLS7G3135LS-200 LDMOS S-band radar power transistor Rev. 2 â'" 23 September 2013 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for S-band radar , circuit. VDS PL Gp D tr tf (V) (W) (dB) (%) (ns) (ns) 3.1 32 , , regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications  S-band radar applications in NXP Semiconductors
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SOT608B

Abstract: . Component layout for 3.1 GHz to 3.5 GHz test circuit Table 8. List of components See Figure 9. Component , BLS6G3135-20; BLS6G3135S-20 LDMOS S-Band radar power transistor Rev. 02 - 17 December 2008 , for radar applications in the 3.1 GHz to 3.5 GHz range. Table 1. Typical performance Typical RF performance at Tcase = 25 °C; tp = 300 µs; = 10 %; IDq = 50 mA; in a class-AB production test circuit. Mode , radar power transistor 1.3 Applications I S-Band power amplifiers for radar applications in the 3.1
NXP Semiconductors
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SOT608B BLS6G3135-2 6G3135S-20
Abstract: BLS7G2729L-350P; BLS7G2729LS-350P LDMOS S-band radar power transistor Rev. 4 - 23 September 2013 , radar applications in the frequency range from 2.7 GHz to 2.9 GHz. Table 1. Typical performance Typical , circuit. Test signal pulsed RF f (GHz) 2.7 to 2.9 VDS (V) 32 PL (W) 350 Gp (dB) 13 D (%) 50 tr (ns) 8 tf , , regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications S-band radar applications in the frequent range 2.7 GHz to 2.9 GHz NXP Semiconductors BLS7G2729L(S)-350P LDMOS S-band radar power NXP Semiconductors
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IXBK55N300

Abstract: IXBH12N300 . HV BiMOSFETsTM are proving most useful in highvoltage applications such as AC switches, circuit breakers, radar pulse modulators, power supplies, capacitor discharge circuits, and laser and X-ray , system design, with improved reliability, a lower component count, and a lower system cost. Features , voltage, lower current rated devices Simpler system design Improved reliability Reduced component , proprietary ISOPLUSTM packages Radar transmitter power supplies Radar pulse modulators Capacitor
IXYS
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IXBK55N300 IXBH12N300 IXBH20N300 IXBF55N300 IXBH32N300 BiMOSFET E153432
Abstract: L-band radar LDMOS transistor BLL1214-250 List of components (see Fig.10) COMPONENT DESCRIPTION , DISCRETE SEMICONDUCTORS DAT book, halfpage M3D379 BLL1214-250 L-band radar LDMOS , Product specification L-band radar LDMOS transistor BLL1214-250 PINNING - SOT502A FEATURES â , inductance. 3 source, connected to ï¬'ange APPLICATIONS â'¢ L-band radar applications in the 1200 , .1 Simplified outline. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common source test circuit Philips Semiconductors
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SCA75

ATC200B

Abstract: BLL1214-250 L-band radar LDMOS transistor BLL1214-250 List of components (see Fig.10) COMPONENT DESCRIPTION , DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLL1214-250 L-band radar LDMOS , Product specification L-band radar LDMOS transistor BLL1214-250 FEATURES PINNING - SOT502A , inductance. 3 source, connected to flange APPLICATIONS · L-band radar applications in the 1200 to , . QUICK REFERENCE DATA RF performance at Th = 25 °C in a common source test circuit. MODE OF OPERATION
Philips Semiconductors
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MLD861

doppler radar

Abstract: abstract for robotics project ) controlled dynamically by the Radar Manager. This project is implemented on a Printed Circuit Board ( PCB , Processing for Monopulse Doppler Radar Authors: P.H. Dezaux, X. Gilles, S. Marques EFRIE, France , . 20 Communication with the Radar Manager , . 23 Front-End Processing for Monopulse Doppler Radar Abstract FEPMR is standing for Front-End and Doppler Processing for Monopulse Doppler Radar. It is a PCB at the frontier between the RF
Texas Instruments
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doppler radar abstract for robotics project doppler sensor rf doppler sensor architecture of TMS320C50 data sheet for doppler radar SPRA299

doppler radar

Abstract: pulse doppler radar ) controlled dynamically by the Radar Manager. This project is implemented on a Printed Circuit Board ( PCB , Processing for Monopulse Doppler Radar Authors: P.H. Dezaux, X. Gilles, S. Marques EFRIE, France , . 20 Communication with the Radar Manager , . 23 Front-End Processing for Monopulse Doppler Radar Abstract FEPMR is standing for Front-End and Doppler Processing for Monopulse Doppler Radar. It is a PCB at the frontier between the RF
Texas Instruments
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pulse doppler radar Monopulse radar circuit component Ground Radar diagram radar dsp processor sensor doppler array
Abstract: transistor Table 9. List of components â'¦continued For test circuit see Figure 2. Component , . Component layout for class-AB production test circuit BLL6H1214-500_1214LS-500 Product data sheet , BLL6H1214-500; BLL6H1214LS-500 LDMOS L-band radar power transistor Rev. 3 â'" 5 August 2013 , for L-band radar applications in the 1.2 GHz to 1.4 GHz range. Table 1. Test information Typical , test circuit. pulsed RF f VDS PL Gp D tr tf (GHz) Test signal (V NXP Semiconductors
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Abstract: LDMOS L-band radar power transistor 7.3 Application circuit C1 C3 C10 C9 C2 C7 C4 R1 C8 , BLL6H1214L-250; BLL6H1214LS-250 LDMOS L-band radar power transistor Rev. 02 - 2 March 2010 , for L-band radar applications in the 1.2 GHz to 1.4 GHz range. Table 1. Test information Typical RF performance at Tcase = 25 °C; tp = 300 s; = 10 %; IDq = 100 mA; in a class-AB production test circuit. Mode , Semiconductors BLL6H1214L(S)-250 LDMOS L-band radar power transistor 1.3 Applications L-band power NXP Semiconductors
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1214LS-250
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