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DMD-DISCOVERY-3000-CHIPSET Texas Instruments Discovery 3000 Chipset visit Texas Instruments
TNETD3000C Texas Instruments TNETD3000 ADSL Chipset visit Texas Instruments
TNETD3000R Texas Instruments TNETD3000 ADSL Chipset visit Texas Instruments
DMD-DISCOVERY-1100-CHIPSET Texas Instruments Discovery 1100 Chipset visit Texas Instruments
DRIVECABLE02EVK Texas Instruments DS15BA101 DS15EA101 Cable Extender Chipset Evaluation Kit visit Texas Instruments
AC5 CHIPSET Texas Instruments AC5 Octal Port Central Office ADSL Chipset visit Texas Instruments

qualcomm chipsets

Catalog Datasheet MFG & Type PDF Document Tags

qualcomm chipsets

Abstract: RF3100-2 I MICRO-DEVICES 3 V 9 00M H z LINEAR AM PLIFIER MODULE · 3 V C D M A /A M PS Cellular Handsets · 3 V C D M A 2000/1X Cellular Handsets · Spread-Spectrum Systems Designed for Compatibility with Qualcomm Chipsets Product Description The RF3100-2 is a high-power, high-efficiency linear amplifier module targeting 3V hand-held systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in dual
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qualcomm chipsets 824MH 849MH

qualcomm chipsets

Abstract: RF micro designed in at Qualcomm RF3100-2 2 3V 900MHZ LINEAR AMPLIFIER MODULE Typical Applications · 3V CDMA/AMPS Cellular Handsets · 3V CDMA2000/1X Cellular Handsets · Designed for Compatibility with Qualcomm Chipsets 2 POWER AMPLIFIERS · Spread-Spectrum Systems Product Description The RF3100-2 is a high-power, high-efficiency linear amplifier module targeting 3V hand-held systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use
RF Micro Devices
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RF micro designed in at Qualcomm qualcomm RF device specification block diagram of qualcomm

qualcomm chipsets

Abstract: RF3300-2 I MICRO ·DEVICES T y p ic a l A p p lic a tio n s 3 V 9 00M H z LINEAR AM PLIFIER MODULE · 3V CDMA/AMPS Cellular Handsets · 3V CDMA2000/1X Cellular Handsets · Spread-Spectrum Systems Designed for Compatibility with Qualcomm Chipsets P ro d u c t D e s c rip tio n The RF3300-2 is a high-power, high-efficiency linear amplifier module targeting 3V handheld systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been
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FCH 1150

Abstract: MICRO-DEVICES Typical Applications · 3V CDMA US-PCS Handsets · 3V CDMA2000/1X PCS Handsets · Spread-Spectrum Systems 3 V 1 9 0 0 M H Z LINEAR AM PLIFIER MODULE · Designed for Compatibility with Qualcomm Chipsets Product Description The RF6000-3 is a high-power, high-efficiency linear amplifier IC targeting 3V handheld systems. The device is manufactured on a RF Micro Devices' advanced third generation Gallium Arsenide Heterojunction Bipolar Tran sistor (HBT) process, and has been designed for use as the
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FCH 1150 1850MH 1910MH 08SOTYP0 CDMA2000 IS-95

qualcomm chipsets

Abstract: PA3100-2 2 Typical Applications · 3V CDMA/AMPS Cellular Handsets · 3V CDMA2000/1X Cellular Handsets · Spread-Spectrum Systems · Designed for Compatibility with Qualcomm Chipsets 3V 900MHZ LINEAR AMPLIFIER MODULE 2 POWER AMPLIFIERS 4.390 6.0 sq 0.100 Dimensions in mm. Product Description The PA3100-2 is a high-power, high-efficiency linear amplifier module targeting 3V hand-held systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process
RF Micro Devices
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lc 9600 p

Abstract: MICRO-DEVICES T y p ic a l A p p lic a tio n s RF6000-2 I 3 V 9 0 0 M HZ LINEAR AM PLIFIER MODULE · 3V CDMA/AMPS Cellular Handsets · 3 V CDMA2000/1X Cellular Handsets · Spread-Spectrum Systems Designed for Compatibility with Qualcomm Chipsets P ro d u c t D e s c r ip tio n The RF6000-2 is a high-power, high-efficiency linear amplifier module targeting 3V handheld systems. The device is manufactured on a RF Micro Devices' advanced third generation Gallium Arsenide Heterojunction Bipolar Transistor
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lc 9600 p A2000

HBT 01 - 05

Abstract: qualcomm RF device specification RF3300-3 1 MICRO-DEVICES T y p ic a l A p p lic a tio n s 3 V 1 900M H z LINEAR AM PLIFIER MODULE · 3V CDMA US-PCS Handsets · 3V CDMA2000/1X PCS Handsets · Spread-Spectrum Systems · Designed for Compatibility with Qualcomm Chipsets P ro d u c t D e s c r ip tio n The RF3300-3 is a high-power, high-efficiency linear amplifier IC targeting 3V handheld systems. The device is manufactured on an advanced Gallium Arsenide Hetero junction Bipolar Transistor (HBT) process, and has been designed for use as the
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HBT 01 - 05 RF5187 2140MH

1900MHZ

Abstract: RF6000-3 RF6000-3 Preliminary 0 3V 1900MHZ LINEAR AMPLIFIER MODULE Typical Applications · 3V CDMA US-PCS Handsets · 3V CDMA2000/1X PCS Handsets · Designed for Compatibility with Qualcomm Chipsets · Spread-Spectrum Systems Product Description Optimum Technology Matching® Applied ! Si BJT GaAs HBT SiGe HBT Si CMOS InGaP/HBT GaN HEMT 1 4.850 4.150 3.850 3.150 2.850 TYP 5.00 ± 0.10 sq. 3.150 2.150 TYP 1.850 TYP 1.150 TYP 0.850 TYP 4.850 TYP 1
RF Micro Devices
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RO4003
Abstract: RF3100-3 0 Typical Applications · 3V CDMA US-PCS Handsets · 3V CDMA2000/1X PCS Handsets · Spread-Spectrum Systems Product Description · Designed for Compatibility with Qualcomm Chipsets 3V 1900MHz LINEAR AMPLIFIER MODULE The RF3100-3 is a high-power, high-efficiency linear amplifier IC targeting 3V hand-held systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in dualmode 3V CDMA hand-held digital RF Micro Devices
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1900MH

linear amplifier 1.6 to 30 MHz

Abstract: transistor f6 RF3100-3K 0 Typical Applications · 3V CDMA Korean-PCS Handsets · Spread-Spectrum Systems · Designed for Compatibility with Qualcomm Chipsets 3V 1700MHz LINEAR AMPLIFIER MODULE The RF3100-3K is a high-power, high-efficiency linear amplifier IC targeting 3V hand-held systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in dualmode 3V CDMA hand-held digital cellular equipment
RF Micro Devices
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linear amplifier 1.6 to 30 MHz transistor f6 micro linear application note 35 1700MH 1750MH 1780MH

HEMT marking P

Abstract: Qualcomm Chipsets 1.625 2.425 3.575 4.375 1 5.075 TYP 4.375 TYP NOTES: Nominal thickness
RF Micro Devices
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HEMT marking P

RF micro designed in at Qualcomm

Abstract: RF3100-2 0 Typical Applications · 3V CDMA/AMPS Cellular Handsets · 3V CDMA2000/1X Cellular Handsets · Spread-Spectrum Systems Product Description · Designed for Compatibility with Qualcomm Chipsets 3V 900MHz LINEAR AMPLIFIER MODULE The RF3100-2 is a high-power, high-efficiency linear amplifier module targeting 3V hand-held systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in
RF Micro Devices
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900MH
Abstract: RoHS Compliant & Pb-Free Product · Designed for Compatibility with Qualcomm Chipsets 1 1.70 1.45 RF Micro Devices
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Abstract: RF6000-3 Preliminary 0 3V 1900MHZ LINEAR AMPLIFIER MODULE RoHS Compliant & Pb-Free Product Typical Applications â'¢ 3V CDMA US-PCS Handsets â'¢ 3V CDMA2000/1X PCS Handsets â'¢ Designed for Compatibility with Qualcomm Chipsets â'¢ Spread-Spectrum Systems Product Description Optimum Technology Matching® Applied Si BJT GaAs HBT SiGe HBT Si CMOS InGaP/HBT GaN HEMT 1 4.850 4.150 3.850 3.150 2.850 TYP 5.00 ± 0.10 sq. 3.150 2.150 TYP 1.850 TYP RF Micro Devices
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1900MHZ

Abstract: RF6000-3 RF6000-3 Preliminary 0 3V 1900MHZ LINEAR AMPLIFIER MODULE Typical Applications · 3V CDMA US-PCS Handsets · 3V CDMA2000/1X PCS Handsets · Designed for Compatibility with Qualcomm Chipsets · Spread-Spectrum Systems Product Description Optimum Technology Matching® Applied Si BJT GaAs HBT SiGe HBT Si CMOS InGaP/HBT GaN HEMT 1 4.850 4.150 3.850 3.150 2.850 TYP 5.00 ± 0.10 sq. 3.150 2.150 TYP 1.850 TYP 1.150 TYP 0.850 TYP 4.850 TYP 1 Shaded areas
RF Micro Devices
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Abstract: AMPLIFIER MODULE · Designed for Compatibility with Qualcomm Chipsets 1 1.70 1.45 1.325 1.675 RF Micro Devices
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Abstract: RF3300-3 2 Typical Applications · 3V CDMA US-PCS Handsets · 3V CDMA2000/1X PCS Handsets · Spread-Spectrum Systems · Designed for Compatibility with Qualcomm Chipsets 3V 1900MHZ LINEAR AMPLIFIER MODULE 2 POWER AMPLIFIERS NOTES: Nominal thickness, 1.55 mm. Note orientation of Pin 1. 1.625 2.425 3.575 Product Description 7.375 TYP The RF3300-3 is a high-power, high-efficiency linear amplifier IC targeting 3V handheld systems. The device is manufactured on an advanced Gallium Arsenide RF Micro Devices
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1880MH
Abstract: 1900MHz LINEAR AMPLIFIER MODULE · Designed for Compatibility with Qualcomm Chipsets 1.625 2.425 RF Micro Devices
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Abstract: RF6000-2 Preliminary 0 3V 900MHZ LINEAR AMPLIFIER MODULE RoHS Compliant & Pb-Free Product Typical Applications â'¢ 3V CDMA/AMPS Cellular Handsets â'¢ 3V CDMA2000/1X Cellular Handsets â'¢ Designed for Compatibility with Qualcomm Chipsets â'¢ Spread-Spectrum Systems Optimum Technology Matching® Applied Si BJT GaAs HBT SiGe HBT Si CMOS InGaP/HBT GaN HEMT 1 4.850 TYP 4.150 3.850 5.00 ± 0.10 sq. 3.150 TYP 2.850 TYP 2.150 TYP 1.850 TYP 1.675 1.325 RF Micro Devices
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Abstract: AMPLIFIER MODULE RoHS Compliant & Pb-Free Product · Designed for Compatibility with Qualcomm Chipsets RF Micro Devices
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