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power transistor selection

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: Richardson Electronics 800-737-6937 www.rfpowernet.com RF POWER TRANSISTOR SELECTION GUIDE , ST CODE EC GZ MW MY MO SB SF SM RF POWER TRANSISTOR SELECTION GUIDE SUPPLIER , www.rfpowernet.com RF POWER TRANSISTOR SELECTION GUIDE August 2000 MOSFETS Frequency MHz 2-100 2-100 , Richardson Electronics 800-737-6937 www.rfpowernet.com RF POWER TRANSISTOR SELECTION GUIDE August , RF POWER TRANSISTOR SELECTION GUIDE August 2000 BIPOLARS CONTINUED Frequency MHz 88-108 Richardson Electronics
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transistor 5cw transistor 5cw 61 sd1466 transistor 6cw TRANSISTOR REPLACEMENT GUIDE 6CW transistor CDMA2000 D2020UK D2082UK PTF10159 MRF372 BLF861
Abstract: = 10k C2 = 100nF C5 = 100nF SCHEMATIC DIAGRAM 3 - POWER TRANSISTOR SELECTION The output voltage (and , not necessary in this application. Q2 is a low cost general purpose small power transistor. Q1 is a medium power transistor, heat-sinked, capable to dissipate a few Watts in the worst case (output of the , into account during the design of the charger. The voltage, on the emitter of transistor Q1 is Veq1 = STMicroelectronics
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power transistor bd135 vr4 control TSM101 BD135 1N4004
Abstract: SCHEMATIC DIAGRAM 2/3 3 - POWER TRANSISTOR SELECTION The output voltage (and by consequence, the , application. Q2 is a low cost general purpose small power transistor. Q1 is a medium power transistor , transistor Q1 is Veq1 = (1.45 x 6) + 0.7V = 9.4V and, regarding R6 and R7 : R6+R7 Veq1 = . Vref R6 P1 STMicroelectronics
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BD135 PIN DIAGRAM
Abstract: SCHEMATIC DIAGRAM 2/3 3 - POWER TRANSISTOR SELECTION The output voltage (and by consequence, the , application. Q2 is a low cost general purpose small power transistor. Q1 is a medium power transistor , transistor Q1 is Veq1 = (1.45 x 6) + 0.7V = 9.4V and, regarding R6 and R7 : R6+R7 Veq1 = . Vref R6 P1 STMicroelectronics
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CIRCUIT DIAGRAM OF BD135
Abstract: SCHEMATIC DIAGRAM 2/3 3 - POWER TRANSISTOR SELECTION The output voltage (and by consequence, the , application. Q2 is a low cost general purpose small power transistor. Q1 is a medium power transistor , transistor Q1 is Veq1 = (1.45 x 6) + 0.7V = 9.4V and, regarding R6 and R7 : R6+R7 Veq1 = . Vref R6 P1 STMicroelectronics
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Abstract: Bipolar Power Transistor Selection Guide Bipolar Power Transistor Selection Guide Analog Discrete Interface & Logic Optoelectronics January 2003 TM Across the board. Around the world. Bipolar Power Transistor Selection Guide January 2003 Table of Contents Product General Purpose Transistors DPAK 2 D PAK SOT - 223 IPAK TO - 126 TO - 220 TO - 220F Darlington Transistors DPAK , -6, SuperSOTTM-8, SyncFETTM, The Power FranchiseTM, TinyLogicTM, TruTranslationTM, UHCTM, UltraFET®, VCXTM Lit Fairchild Semiconductor
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BUK 450-1000 tip122 tip127 audio board Transistor Selection Guide car amp FJL6920 equivalent tip122 tip127 audio amp KSH340 KSH350 MJD340 MJD350 S-17148 247TM
Abstract: MAX608 5V or Adjustable, Low-Voltage, Step-Up DC-DC Controller Power Transistor Selection Use an N-channel MOSFET power transistor with the MAX608. Use logic-level or low-threshold N-FETs to ensure the , PFM devices. In addition, the external sense resistor and power transistor allow the user to tailor , of the external power transistor is switched from VOUT to ground. The MAX608's output voltage can , components. As with traditional PFM converters, the power transistor is not turned on until the voltage Maxim Integrated Products
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MAX608EPA MAX608ESA 1N5817-1N5822 300uH 4pin 500k preset variable resistor MAX1771 max6080 MAX608C/D
Abstract: MAX608 5V or Adjustable, Low-Voltage, Step-Up DC-DC Controller Power Transistor Selection Use an N-channel MOSFET power transistor with the MAX608. Use logic-level or low-threshold N-FETs to ensure the , PFM devices. In addition, the external sense resistor and power transistor allow the user to tailor , of the external power transistor is switched from VOUT to ground. The MAX608's output voltage can , components. As with traditional PFM converters, the power transistor is not turned on until the voltage Maxim Integrated Products
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7nc ics circuit Schottky Diode 20V 2A MMFT3055EL
Abstract: . 11 MAX1771 Power Transistor Selection Use an N-channel MOSFET power transistor with the , Description PIN 1 EXT Gate Drive for External N-Channel Power Transistor 2 V , devices. In addition, the external sense resistor and power transistor allow the user to tailor the , voltage swing applied to the gate of the external power transistor is reduced (the gate swings from V+ to ground), the power transistor's on-resistance FB DUAL-MODE COMPARATOR SHDN MAX1771 Maxim Integrated Products
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MAX1771CPA MAX1771CSA MAX1771EPA flybacktransformer MAX773 MAX770 MAX1771EVKIT-SO MAX1771C/D MAX1771ESA MAX1771MJA
Abstract: . 11 MAX1771 Power Transistor Selection Use an N-channel MOSFET power transistor with the , Description PIN 1 EXT Gate Drive for External N-Channel Power Transistor 2 V , devices. In addition, the external sense resistor and power transistor allow the user to tailor the , voltage swing applied to the gate of the external power transistor is reduced (the gate swings from V+ to ground), the power transistor's on-resistance FB DUAL-MODE COMPARATOR SHDN MAX1771 Maxim Integrated Products
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MMBT8599LT1 MMFT3055ELT1 MTD6N1O transformerless power supply 12v output MOTOROLA MUR115 9v 500ma transformer MIL-STD-883B D03340 CMPZ5240/ MMBZ5240BL
Abstract: Adjustable, High-Efficiency, Low IQ, Step-Up DC-DC Controller Power Transistor Selection Use an N-channel , FUNCTION Gate Drive for External N-Channel Power Transistor Power-Supply Input. Also acts as a , over previous PFM devices. In addition, the external sense resistor and power transistor allow the user , input voltage range is 2V to VOUT. The voltage applied to the gate of the external power transistor is , the gate of the external power transistor is reduced (the gate swings from V+ to ground), the power Maxim Integrated Products
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1N5817-22 MAX1771 equivalent 1N4148 24V to 48V dc dc converter step-up max177110 pwm ic for le driver for 24W 1N5817 1N5820 MTD20N03HDL
Abstract: Controller Power Transistor Selection Diode Selection Use an N-channel MOSFET power transistor with , Gate Drive for External N-Channel Power Transistor 2 V+ Power-Supply Input. Also acts as a , over previous PFM devices. In addition, the external sense resistor and power transistor allow the , gate of the external power transistor is switched from VOUT to ground, providing more switch gate , voltage sense point. Since the voltage swing applied to the gate of the external power transistor is Maxim Integrated Products
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MAX756/MAX757 MAX761/MAX762
Abstract: . 11 MAX1771 Power Transistor Selection Use an N-channel MOSFET power transistor with the , N-Channel Power Transistor 2 V+ Power-Supply Input. Also acts as a voltage-sense point when in , PFM devices. In addition, the external sense resistor and power transistor allow the user to tailor , voltage swing applied to the gate of the external power transistor is reduced (the gate swings from V+ to ground), the power transistor's on-resistance The MAX1771 offers three main improvements over Maxim Integrated Products
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preset variable resistor 200k
Abstract: Controller Power Transistor Selection Diode Selection Use an N-channel MOSFET power transistor with , Gate Drive for External N-Channel Power Transistor 2 V+ Power-Supply Input. Also acts as a , over previous PFM devices. In addition, the external sense resistor and power transistor allow the , gate of the external power transistor is switched from VOUT to ground, providing more switch gate , voltage sense point. Since the voltage swing applied to the gate of the external power transistor is Maxim Integrated Products
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T8599LT1 MTD6N10 MBRS1100T3
Abstract: , High-Efficiency, Low IQ, Step-Up DC-DC Controller Power Transistor Selection Diode Selection Use an , Gate Drive for External N-Channel Power Transistor 2 V+ Power-Supply Input. Also acts as a , sense resistor and power transistor allow the user to tailor the output current capability for each , to VOUT. The voltage applied to the gate of the external power transistor is switched from VOUT to , external power transistor is reduced (the gate swings from V+ to ground), the power transistorâ'™s Maxim Integrated Products
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Abstract: is designed to accept this power Transistor Selection External transistor selection depends on , Dual (USB) ¥ Switch controller and linear regulator for 3.3V SDRAM ¥ Provides SDRAM and RAMBUS power simutaneously ¥ Adaptive Break-before-Make ¥ Integrated Power Good ¥ Drives all N-Channel MOSFETs plus NPN ¥ , components. The RC5060 also offers integrated Power Good and Current Limiting that protects each output , from standby power. 2 PUMP Charge pump switcher. 3 SDRAMOUT 3.3V SDRAM gate control Fairchild Semiconductor
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fds4410dy 5V STANDBY SO24 sdram voltage S5511 RC5058 RC5060M DS30005057
Abstract: Controller Power Transistor Selection Diode Selection Use an N-channel MOSFET power transistor with , Gate Drive for External N-Channel Power Transistor 2 V+ Power-Supply Input. Also acts as a , over previous PFM devices. In addition, the external sense resistor and power transistor allow the , gate of the external power transistor is switched from VOUT to ground, providing more switch gate , voltage sense point. Since the voltage swing applied to the gate of the external power transistor is Maxim Integrated Products
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Abstract: Transistor Selection External transistor selection depends on usage, differing for the linear regulators , external components. The RC5060 also offers integrated Power Good and Current Limiting that protects each , linear regulator for 3.3V SDRAM â'¢ Provides SDRAM and RAMBUS power simutaneously â'¢ Adaptive Break-before-Make â'¢ Integrated Power Good â'¢ Drives all N-Channel MOSFETs plus NPN â'¢ Latched overcurrent , Output Temperature Drift. Table 1. Static Power Descriptors PW ROK SLPS3# SLPS5# M a in 5 -
OCR Scan
5060M
Abstract: N-channel Low Rdson FET or a power NPN transistor. High Current Output Drivers The RC5035/36 high , selection guide is given in Appendix C for some commonly available schottky power rectifiers. MOSFET , Width vs Capacitance 11 AN44 APPLICATION NOTE Using a typical power transistor, for example , temperature of the power transistor under a 3A load, we will get: Motherboard Design Considerations P D , power dissipation due to the base current required by the NPN bipolar transistor, assuming a minimum Fairchild Semiconductor
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ph c15 diode how to check ic on motherboard P55 MOSFET 2SK1388 ph c16 diode P55 Chipset AP-55 20SA100M 6SA330M C10T02QL MBRB1545CT MBRS140T3
Abstract: N-channel Low Rdson FET or a power NPN transistor. High Current Output Drivers The RC5035/36 high , selection guide is given in Appendix C for some commonly available schottky power rectifiers. MOSFET , Width vs Capacitance 11 AN55 APPLICATION NOTE Using a typical power transistor, for example , temperature of the power transistor under a 3A load, we will get: Motherboard Design Considerations P D , power dissipation due to the base current required by the NPN bipolar transistor, assuming a minimum Fairchild Semiconductor
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free P55 MOSFET transistor p54 smd free pdf download P55 MOSFET xicon capacitors Intel P55 Chipset pentium microprocessor architecture AN-55 EC10QS02L AN30000055
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