NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Samples | Ordering |
| TPS3836J25DBVT | Texas Instruments | 220nA Supervisor with 10ms/200ms selectable delay time 5-SOT-23 -40 to 85 | 
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| TPS3836E18DBVR | Texas Instruments | 220nA Supervisor with 10ms/200ms selectable delay time 5-SOT-23 -40 to 85 |
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| TPS3836K33DBVR | Texas Instruments | 220nA Supervisor with 10ms/200ms selectable delay time 5-SOT-23 -40 to 85 |
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| TPS3836J25DBVR | Texas Instruments | 220nA Supervisor with 10ms/200ms selectable delay time 5-SOT-23 -40 to 85 |
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| TPS3836E18DBVT | Texas Instruments | 220nA Supervisor with 10ms/200ms selectable delay time 5-SOT-23 -40 to 85 |
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: Richardson Electronics 800-737-6937 www.rfpowernet.com RF POWER TRANSISTOR SELECTION GUIDE , ST CODE EC GZ MW MY MO SB SF SM RF POWER TRANSISTOR SELECTION GUIDE SUPPLIER , www.rfpowernet.com RF POWER TRANSISTOR SELECTION GUIDE August 2000 MOSFETS Frequency MHz 2-100 2-100 , Richardson Electronics 800-737-6937 www.rfpowernet.com RF POWER TRANSISTOR SELECTION GUIDE August , RF POWER TRANSISTOR SELECTION GUIDE August 2000 BIPOLARS CONTINUED Frequency MHz 88-108 ... | Original |
64 pages, |
TV power transistor datasheet TRANSISTOR GUIDE TH430 D2259 D1002UK power transistor selection uhf linear amplifier module PH1090 FET Transistor Guide d2253 transistor selection guide STM1645-10 MS3016 datasheet abstract |
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| Abstract: SCHEMATIC DIAGRAM 2/3 3 - POWER TRANSISTOR SELECTION The output voltage (and by consequence, the , application. Q2 is a low cost general purpose small power transistor. Q1 is a medium power transistor , transistor Q1 is Veq1 = (1.45 x 6) + 0.7V = 9.4V and, regarding R6 and R7 : R6+R7 Veq1 = . Vref R6 P1 ... | Original |
3 pages, |
TSM101 BD135 1N4004 CIRCUIT DIAGRAM OF BD135 TSM101 abstract |
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| Abstract: SCHEMATIC DIAGRAM 2/3 3 - POWER TRANSISTOR SELECTION The output voltage (and by consequence, the , application. Q2 is a low cost general purpose small power transistor. Q1 is a medium power transistor , transistor Q1 is Veq1 = (1.45 x 6) + 0.7V = 9.4V and, regarding R6 and R7 : R6+R7 Veq1 = . Vref R6 P1 ... | Original |
3 pages, |
TSM101 BD135 1N4004 TSM101 abstract |
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| Abstract: SCHEMATIC DIAGRAM 2/3 3 - POWER TRANSISTOR SELECTION The output voltage (and by consequence, the , application. Q2 is a low cost general purpose small power transistor. Q1 is a medium power transistor , transistor Q1 is Veq1 = (1.45 x 6) + 0.7V = 9.4V and, regarding R6 and R7 : R6+R7 Veq1 = . Vref R6 P1 ... | Original |
3 pages, |
TSM101 BD135 1N4004 TSM101 abstract |
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| Abstract: Bipolar Power Transistor Selection Guide Bipolar Power Transistor Selection Guide Analog Discrete Interface & Logic Optoelectronics January 2003 TM Across the board. Around the world. Bipolar Power Transistor Selection Guide January 2003 Table of Contents Product General Purpose Transistors DPAK 2 D PAK SOT - 223 IPAK TO - 126 TO - 220 TO - 220F Darlington Transistors DPAK , , SyncFETTM, The Power FranchiseTM, TinyLogicTM, TruTranslationTM, UHCTM, UltraFET�, VCXTM Lit. No. ... | Original |
14 pages, |
ksh200 equivalent bd242 TRANSISTOR equivalent BD136 ANALOG kse13007 analogue ksh50 FJAF6815 FJAF6910 TRANSISTOR Tip41-Tip42 bd135 kse13007 car amp tip141 equivalent TRANSISTOR TIP31 datasheet abstract |
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| Abstract: is designed to accept this power Transistor Selection External transistor selection depends on , Dual (USB) ¥ Switch controller and linear regulator for 3.3V SDRAM ¥ Provides SDRAM and RAMBUS power simutaneously ¥ Adaptive Break-before-Make ¥ Integrated Power Good ¥ Drives all N-Channel MOSFETs plus NPN ¥ , components. The RC5060 RC5060 also offers integrated Power Good and Current Limiting that protects each output, and , from standby power. 2 PUMP Charge pump switcher. 3 SDRAMOUT 3.3V SDRAM gate control. ... | Original |
13 pages, |
TIP41A MBR0520L mosfet array vgs 5v 2A NDH833N NDS9956A RC1587 RC5058 RC5060 SO24 fds4410dy RC5060 abstract |
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| Abstract: MAX608 MAX608 5V or Adjustable, Low-Voltage, Step-Up DC-DC Controller Power Transistor Selection Use an N-channel MOSFET power transistor with the MAX608 MAX608. Use logic-level or low-threshold N-FETs to ensure the , PFM devices. In addition, the external sense resistor and power transistor allow the user to tailor , of the external power transistor is switched from VOUT to ground. The MAX608 MAX608's output voltage can , components. As with traditional PFM converters, the power transistor is not turned on until the voltage ... | Original |
12 pages, |
MAX608ESA MAX608EPA MAX608 MAX1771 300uH 4pin Schottky Diode 20V 2A 1N5817-1N5822 7nc ics circuit datasheet abstract |
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| Abstract: MAX608 MAX608 5V or Adjustable, Low-Voltage, Step-Up DC-DC Controller Power Transistor Selection Use an N-channel MOSFET power transistor with the MAX608 MAX608. Use logic-level or low-threshold N-FETs to ensure the , PFM devices. In addition, the external sense resistor and power transistor allow the user to tailor , of the external power transistor is switched from VOUT to ground. The MAX608 MAX608's output voltage can , components. As with traditional PFM converters, the power transistor is not turned on until the voltage ... | Original |
12 pages, |
MAX608ESA MAX608 MAX1771 MMFT3055EL MAX608EPA datasheet abstract |
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| Abstract: 11 MAX1771 MAX1771 Power Transistor Selection Use an N-channel MOSFET power transistor with the , In addition, the external sense resistor and power transistor allow the user to tailor the output , input voltage range is 2V to VOUT. The voltage applied to the gate of the external power transistor is , applied to the gate of the external power transistor is reduced (the gate swings from V+ to ground), the power transistor's on-resistance The MAX1771 MAX1771 offers three main improvements over prior ... | Original |
16 pages, |
preset variable resistor 200k MAX1771 MAX1771CSA MAX1771EPA MAX1771ESA MAX770 MAX773 MTD6N1O MMBT8599LT1 MAX1771CPA 1N5817-22 datasheet abstract |
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| Abstract: 11 MAX1771 MAX1771 Power Transistor Selection Use an N-channel MOSFET power transistor with the , Description PIN 1 EXT Gate Drive for External N-Channel Power Transistor 2 V+ , devices. In addition, the external sense resistor and power transistor allow the user to tailor the output , voltage swing applied to the gate of the external power transistor is reduced (the gate swings from V+ to ground), the power transistor's on-resistance FB DUAL-MODE COMPARATOR SHDN MAX1771 MAX1771 ... | Original |
16 pages, |
1N5817-22 9v 500ma transformer MAX1771 MAX1771CPA MAX1771CSA MAX1771EPA MAX1771EVKIT-SO MAX770 MAX773 MMBT8599LT1 MMFT3055ELT1 MOTOROLA MUR115 MTD6N1O datasheet abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
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| R3 = 220 W w R9 = short circuit R1 = 10k W C2 = 100nF C5 = 100nF 3 - POWER TRANSISTOR SELECTION The output voltage (and by consequence, the cur- rent) follows the TSM101 TSM101 TSM101 TSM101 output application. Q2 is a low cost general purpose small power transistor. Q1 is a medium power transistor, heat-sinked, capable to dissipate a few Watts in the worst case (output of the charger short the charger. The voltage, on the emitter of transistor Q1 is V eq1 = (1.45 x 6) + 0.7V = 9 www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/4953-v3.htm |
STMicroelectronics | 30/11/2000 | 7.69 Kb | HTM | 4953-v3.htm |
| C2 = 100nF C5 = 100nF 3 - POWER TRANSISTOR SELECTION The output voltage (and by consequence, the cur necessary in this application. Q2 is a low cost general purpose small power transistor. Q1 is a medium power transistor, heat-sinked, capable to dissipate a few Watts in the worst case (output of transistor Q1 is V eq1 = (1.45 x 6) + 0.7V = 9.4V and, regarding R6 and R7 : V eq1 = R6 + R7 R6 . V ref P1 www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/4953-v2.htm |
STMicroelectronics | 14/06/1999 | 5.93 Kb | HTM | 4953-v2.htm |
| C2 = 100nF C5 = 100nF 3 - POWER TRANSISTOR SELECTION The output voltage (and by consequence, the cur necessary in this application. Q2 is a low cost general purpose small power transistor. Q1 is a medium power transistor, heat-sinked, capable to dissipate a few Watts in the worst case (output of transistor Q1 is V eq1 = (1.45 x 6) + 0.7V = 9.4V and, regarding R6 and R7 : V eq1 = R6 + R7 R6 . V ref P1 www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/4953-v1.htm |
STMicroelectronics | 02/04/1999 | 5.96 Kb | HTM | 4953-v1.htm |
| = 220 W w R9 = short circuit R1 = 10k W C2 = 100nF C5 = 100nF 3 - POWER TRANSISTOR SELECTION low cost general purpose small power transistor. Q1 is a medium power transistor, heat the emitter of transistor Q1 is V eq1 = (1.45 x 6) + 0.7V = 9.4V and, regarding R6 and R7 : V eq www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/4953.htm |
STMicroelectronics | 20/10/2000 | 8.02 Kb | HTM | 4953.htm |
| ST | Product Presentations | Transistors | Power Bipolar Transistors Power Bipolar Transistors Selector BUL742 BUL742 BUL742 BUL742 New Power Bipolar Transistor For High Power BIPOLAR TRANSISTORS A New Generation of Deflection Transistors Gold Standards Transistor Products Darlington Products A Guide to ST's Power Bipolar www.datasheetarchive.com/files/stmicroelectronics/stonline/bipolar/index-v1.htm |
STMicroelectronics | 08/02/2001 | 8.89 Kb | HTM | index-v1.htm |
| ST | Product Presentations | Transistors | Power Bipolar Transistors Power Bipolar Transistors Selector BUL742 BUL742 BUL742 BUL742 New Power Bipolar Transistor For High Power BIPOLAR TRANSISTORS A New Generation of Deflection Transistors Gold Standards Transistor Products Darlington Products A Guide to ST's Power Bipolar www.datasheetarchive.com/files/stmicroelectronics/stonline/bipolar/index.htm |
STMicroelectronics | 24/10/2000 | 8.93 Kb | HTM | index.htm |
| ST | Product Presentations | Transistors | Power Bipolar Transistors Power Bipolar Transistors Selector BUL742 BUL742 BUL742 BUL742 New Power Bipolar Transistor For High Power BIPOLAR TRANSISTORS A New Generation of Deflection Transistors Gold Standards Transistor Products Darlington Products A Guide to ST's Power Bipolar www.datasheetarchive.com/files/stmicroelectronics/stonline/prodpres/discrete/powebipo/bipolar.htm |
STMicroelectronics | 20/07/2000 | 8.86 Kb | HTM | bipolar.htm |
| B) Efficiency(%) P L (W) Category Frequency(MHz) V DS (V) V CE (V) BLF1820-40 BLF1820-40 BLF1820-40 BLF1820-40 SOT608 UHF power LDMOS transistor 13 >30 40 UHF transistors 1800 - 2000 26 BLF1820-70 BLF1820-70 BLF1820-70 BLF1820-70 SOT502 UHF power LDMOS transistor 12 >30 65 UHF transistors 1800 - 2000 26 BLF1820-90 BLF1820-90 BLF1820-90 BLF1820-90 SOT502 UHF power LDMOS transistor 12 >30 90 UHF transistors 1800 - 2000 26 BLF1822-10 BLF1822-10 BLF1822-10 BLF1822-10 SOT467C (LDMOST) UHF power LDMOS transistor 13 >30 10 UHF transistors 1800 - 2200 26 BLF2043 BLF2043 BLF2043 BLF2043 SOT538A UHF power LDMOS transistor >12 =40 10 UHF transistors 26 BLF2045 BLF2045 BLF2045 BLF2045 SOT467C www.datasheetarchive.com/files/philips/selectionguides/tables/41142-v1.html |
Philips | 17/02/2002 | 6.18 Kb | HTML | 41142-v1.html |
| Power transistors for EHT Go to the interactive version of this ) (A) I C (SAT) (A) tf (max) (us) Category BUT11A BUT11A BUT11A BUT11A SOT78 (TO-220AB) 1000 5.0 2.5 0.8 Power transistors for EHT BUT11AF BUT11AF BUT11AF BUT11AF SOT186 1000 5.0 2.5 0.8 Power transistors for EHT BUT11AX BUT11AX BUT11AX BUT11AX SOT186A (3 lead TO-220F) 1000 5.0 2.5 5 Power transistors for EHT BUT12A BUT12A BUT12A BUT12A SOT78 (TO-220AB) 1000 8.0 5.0 0.8 Power transistors for EHT BUT12AF BUT12AF BUT12AF BUT12AF SOT186 1000 8.0 5.0 0.8 Power transistors for EHT BUT18A BUT18A BUT18A BUT18A SOT78 (TO-220AB) 1000 6.0 4.0 0 www.datasheetarchive.com/files/philips/selectionguides/tables/31679-v1.html |
Philips | 17/02/2002 | 5.75 Kb | HTML | 31679-v1.html |
| ST | Product Presentations | Transistors | Power Bipolar Transistors | Commodity Transistors Power Bipolar Transistors applications and a guide for bipolar transistors dedicated to specific applications (i.e.horizontal deflection and lighting). Keep it as an essential tool for the promotion of power bipolar transistors products. New Selection Guide A new useful bipolar selection www.datasheetarchive.com/files/stmicroelectronics/stonline/prodpres/discrete/powebipo/bip_com2.htm |
STMicroelectronics | 06/07/2000 | 5.44 Kb | HTM | bip_com2.htm |