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POWEREST Texas Instruments Power Estimation Tool (PET) visit Texas Instruments
SOLARMAGIC-SOLARPOWEROPTIMIZER-REF Texas Instruments SolarMagic SM3320-RF-EV Solar Power Optimizer with RF Communications Reference Design visit Texas Instruments
POE-PD-POWER-REF Texas Instruments LM5072 5V out 25W IEEE 802.3at Compliant POE+ PD Power Reference Design visit Texas Instruments
ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73096RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil

power transistors table

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power transistors cross reference

Abstract: motorola AN485 5.5­5 Bipolar Power Transistors Table 1. Plastic TO­220AB (continued) Device Type ICCont Amps , devices. Bipolar Power Transistors 5.5­6 Motorola Master Selection Guide Table 2. Plastic TO , . Motorola Master Selection Guide 5.5­9 Bipolar Power Transistors Table 5. Plastic TO­225AA Type , preferred devices. Bipolar Power Transistors 5.5­10 Motorola Master Selection Guide Table 6. DPAK , Bipolar Power Transistors Table 7. Metal TO­204AA (Formerly TO­3), TO­204AE (continued) Device Type
Motorola
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power transistors cross reference motorola AN485 transistor master replacement guide buv18a mj150* darlington electronic ballast with MJE13003 MJW16212 BUL44F BUD43B BUD44D2 MJE13003 BUH51

LBE2003S

Abstract: LBE2009S microwave power transistors Table 1 f (MHz) Scattering parameters LBE2003S: VCE = 18 V; IC = 30 mA , LBE2003S; LBE2009S; LCE2009S NPN microwave power transistors Table 2 f (MHz) Scattering , microwave power transistors FEATURES DESCRIPTION · Diffused emitter ballasting resistors The LBE2003S and LBE2009S are NPN silicon planar epitaxial microwave power transistors in a SOT441A metal , NPN microwave power transistors LIMITING VALUES In accordance with the Absolute Maximum Rating
Philips Semiconductors
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SC15 MAM329 MAM330 SCA53

power transistors table

Abstract: LBE2003S specification NPN microwave power transistors Table 1 f (MHz) LBE2003S; LBE2009S Scattering , Semiconductors Product specification NPN microwave power transistors Table 2 f (MHz) LBE2003S , DISCRETE SEMICONDUCTORS DATA SHEET LBE2003S; LBE2009S NPN microwave power transistors , specification NPN microwave power transistors LBE2003S; LBE2009S FEATURES PINNING · Diffused , LBE2003S and LBE2009S are NPN silicon planar epitaxial microwave power transistors in a SOT441A metal
Philips Semiconductors
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power transistors table SCA57

POWER TRANSISTORS 10A 400v pnp

Abstract: NPN Transistor 10A 400V to3 QUALIFIED POWER TRANSISTORS TABLE A lR Max 0.5A 0.75A 1.0A 1.5A 3.0A 4.0A 5.0A 6.0A Package TO-57 TO , .OA TO-5 TO-66 *VCER Rating SELECTION TABLE TO PNP JAN QUALIFIED POWER TRANSISTORS 12 , ú i NUMERICAL INDEX TO JAN QUALIFIED POWER TRANSISTORS . T-33-à . flfl DE |flES40aa D0D07à , M ¿luivviv T !? A M T ^ "J" Q CORP SELECTION TABLE TO DARLINGTON JAN QUALIFIED POWER TRANSISTORS 88D 00790 T*" 3 3-/3. fifl DE |fl254D2E â¡â¡â¡â¡7E)G a | T' ì I TABLE D TO-33 F-24 TO
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2N389 2N1479 2N1489 2N1716 2N6352 2N6350 POWER TRANSISTORS 10A 400v pnp NPN Transistor 10A 400V to3 pnp 400v 10a 2N1468 2NXXXX 19S00 2N424 2N1016B

2NXXXX

Abstract: NPN Transistor 10A 400V to3 QUALIFIED POWER TRANSISTORS TABLE A L Max Package 40V 45V 50V Rated Collector T o Emitter Voltage (VCEO , QUALIFIED POWER TRANSISTORS T * 3 3 - ïI TABLE D Polarity lcMax Package R ated Collector T o Emitter , QUALIFIED POWER TRANSISTORS 2NTYPE* 2N389 2N424 2N1016B 2N1016C 2N1016D 2N 1047A 2N 1048A 2N 1049A 2N , QUALIFIED POWER TRANSISTORS 30 @0.25A 0.6 @1.0A 10 @1.0A 1.4V@1.0A 1.6V@1.0A 2.0V@1.0A 25@2.5A , T 490 3.0V@1.5A 2N 1487.2N 1468 1.0V@1.5A 2N 1469.2N 1490 TABLE B lnMax Package 50V 60 V Rated
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transistor 2n 523 transistor 2N 3440 2n3741 MIL c 3420 transistor TO-59 Package NPN Transistor 15A 400V to3 88DQ0787 2N1480 2N1481 2N1484 2N1722 2N3421

Simple test MOSFET Procedures

Abstract: MOS-Gated Transistors Application Note AN-986 ESD Testing of MOS Gated Power Transistors Table of Contents Page 1 , characterization for ESD 4. ESD inspection of incoming devices Unfortunately, MOS-gated power transistors have , of MOS-gated power transistors undergoing an ESD test, without discussing the fundamental premise , -986 TITLE: ESD Testing of MOS Gated Power Transistors Notices: (HEXFET is the trademark for , Gated Power Transistors (HEXFET is the trademark for International Rectifier Power MOSFETs) I
International Rectifier
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Simple test MOSFET Procedures MOS-Gated Transistors AN986 AN-964 curve tracer

2EDL23N06

Abstract: including the effects of the power transistors. Table 3 lists various circuit parameters proposed for , consequently damage the power transistors. The use of air coils without any magnetic core is therefore , EiceDRIVERâ"¢ Driver IC Evaluation Board EVAL-2EDL23N06PJ Application Note Table of Contents Table of Contents Table of Contents , operation may result to damage of power switches and possibly other circuit components! The board is
Infineon Technologies
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2EDL23N06 C-EU150-064X183 7F/25V C-EUC1206K C-0603 EEEFK1C101P F/16V

IRFC9130

Abstract: irfc130 ." ( 3) International Rectifier Application Note AN-986. "ESD Testing of MOS-Gated Power Transistors , trademark for International Rectifier Power MOSFETs) Introduction This application note describes the HEXFET Power MOSFETs in the HEXFET III family available from International Rectifier in die form. These power MOS field effect transistor die feature the same high reliability planar technology used for the , which identifies them as HEXFET III devices (See AN-966 for full details.) Table I lists HEXFET III
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IRFC9130 irfc130 IRLC024 IRLC034 IRFC9014 irfcg20 AN-955 AN-964D

TRANSISTOR SMD CODE PACKAGE SOT23

Abstract: TRANSISTOR BC337 SMD standard package of medium power transistors. Table 4 and Table 5 on page 14 provide a quick comparison of , performance and lower power dissipation than conventional transistors, dice can be build smaller to fit into , maximum collector currents of conventional transistors using the same package. Table 1: Maximum , BISS transistors will have even less saturation voltages. Table 2: Collector-emitter saturation , further comparison of the medium power bipolar transistors BDP31, PBSS4350Z and PBSS4540Z, all SOT223
Philips Semiconductors
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AN10116-02 4350Z TRANSISTOR SMD CODE PACKAGE SOT23 TRANSISTOR BC337 SMD laptop inverter SCHEMATIC TRANSISTOR K 2915 MOSFET schematic diagram of laptop inverter laptop CCFL inverter SCHEMATIC 01/W97 2515YPN 4350T 4350D
Abstract: medium power transistors 3. Ordering information Table 4. Ordering information Type number[1 , NXP Semiconductors 60 V, 1 A PNP medium power transistors 5. Limiting values Table 6. Limiting , BCP52; BCX52; BC52PA 60 V, 1 A PNP medium power transistors Rev. 9 â'" 18 October 2011 Product , ï'£ 1 ms BCP52; BCX52; BC52PA NXP Semiconductors 60 V, 1 A PNP medium power transistors , Semiconductors 60 V, 1 A PNP medium power transistors 006aac674 1.5 006aac675 1.5 (1) (1 NXP Semiconductors
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SC-73 BCP55 SC-62 BCX55 BC55PA AEC-Q101
Abstract: BCP69; BC869; BC69PA NXP Semiconductors 20 V, 2 A PNP medium power transistors Table 2 , ; BC69PA NXP Semiconductors 20 V, 2 A PNP medium power transistors 3. Ordering information Table , ; BC69PA NXP Semiconductors 20 V, 2 A PNP medium power transistors 5. Limiting values Table 6 , medium power transistors 7. Characteristics Table 8. Characteristics Tamb = 25 ï'°C unless , BCP69; BC869; BC69PA 20 V, 2 A PNP medium power transistors Rev. 7 â'" 12 October 2011 Product NXP Semiconductors
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BCP68 BC868 BC68PA
Abstract: medium power transistors 3. Ordering information Table 4. Ordering information Type number[1 , NXP Semiconductors 80 V, 1 A PNP medium power transistors 5. Limiting values Table 6. Limiting , BCP53; BCX53; BC53PA 80 V, 1 A PNP medium power transistors Rev. 9 â'" 19 October 2011 Product , ï'£ 1 ms BCP53; BCX53; BC53PA NXP Semiconductors 80 V, 1 A PNP medium power transistors , Semiconductors 80 V, 1 A PNP medium power transistors 006aac674 1.5 006aac675 1.5 (1) (1 NXP Semiconductors
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BCP56 BCX56 BC56PA

a 3101 OPTOCOUPLER

Abstract: ic hp 3101 pin diagram inverter can also be substituted with power bipolar transistors, Darlingtons, or MOSFETs along with a suitable optically isolated drive circuit. 3. Alternative Methods for Driving Power Transistors Table 1 , 1 H Power Transistor Gate/Base Drive Optocouplers Application Note 1058 Table of Contents , withstand insulation protection between the power and control circuits, LED ON OFF TRUTH TABLE OUTPUT , 2, the control signals trigger the power transistors to produce a high-frequency PWM waveform, which
Hewlett-Packard
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a 3101 OPTOCOUPLER ic hp 3101 pin diagram 6 pin pulse transformer 4503 circuit diagram opto-coupler darlington pnp ISOLATION PULSE TRANSFORMER 4503 hcpl 4502 igbt driver HCPL-3000/3100/3101 HCPL-3000 HCPL-3100 HCPL-3101 HCPL-3100/1 HCPL-7800
Abstract: BCP68; BC868; BC68PA NXP Semiconductors 20 V, 2 A NPN medium power transistors Table 2 , NXP Semiconductors 20 V, 2 A NPN medium power transistors 5. Limiting values Table 6. Limiting , medium power transistors 7. Characteristics Table 8. Characteristics Tamb = 25 ï'°C unless , BCP68; BC868; BC68PA 20 V, 2 A NPN medium power transistors Rev. 8 â'" 18 October 2011 Product , of 23 BCP68; BC868; BC68PA NXP Semiconductors 20 V, 2 A NPN medium power transistors 3 NXP Semiconductors
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hp 4503 opto

Abstract: a 3101 OPTOCOUPLER . 3. Alternative Methods for Driving Power Transistors Table 1 lists the various techniques that , Modulated Power Inverter. E 3 Table 1. Methods for Driving Power Bipolar Transistors/Darlingtons , 1 H Power Transistor Gate/Base Drive Optocouplers Application Note 1058 Table of , Optocoupler.) In the example shown in Figure 2, the control signals trigger the power transistors to , transistors. In the transformer isolation circuit example shown in Table 1, the turn-off speed is limited
Hewlett-Packard
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hp 4503 opto hp 3101 pin OPTOCOUPLER hp 2601 HP 2601 OPTO 8 pin ic 4562 mosfet HP optocoupler 3000 5091-6000E
Abstract: medium power transistors 3. Ordering information Table 4. Ordering information Type number[1 , Semiconductors 45 V, 1 A PNP medium power transistors 5. Limiting values Table 6. Limiting values In , BCP51; BCX51; BC51PA 45 V, 1 A PNP medium power transistors Rev. 9 â'" 13 October 2011 Product , ï'£ 1 ms BCP51; BCX51; BC51PA NXP Semiconductors 45 V, 1 A PNP medium power transistors , Semiconductors 45 V, 1 A PNP medium power transistors 006aac674 1.5 006aac675 1.5 (1) (1 NXP Semiconductors
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BCP54 BCX54 BC54PA

MRF8P9040N

Abstract: rf Amplifier mhz Doherty 470-860 for automated assembly equipment. Table of Contents Page RF LDMOS Power Transistors . . . . . , Product Selector Guide 11 RF LDMOS Power Transistors (continued) Table 5. Cellular - To 1000 , Product Selector Guide RF LDMOS Power Transistors (continued) Table 8. Cellular - To 2200 MHz - , Guide 13 RF LDMOS Power Transistors (continued) Table 8. Cellular - To 2200 MHz (continued , RF LDMOS Power Transistors (continued) Table 10. L-Band - 960-1400 MHz Frequency Band(37
Freescale Semiconductor
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MRF8P9040N rf Amplifier mhz Doherty 470-860 MRF1513NT1 s2p MRF8S21100H MRF8S21100HS MRF8S9220HR3

sc 6038

Abstract: MJE12007 12E | q b3b725M 00Û441Û à | T-91-01 . Bipolar Power Transistors TABLE 1 â , ?5S4 G0Ã4434 T | T -91 -0 TABLE 11 â'" MILITARY SPECIFIED POWER TRANSISTORS Resistive Switching , Selection By Package Motorola power transistors are available in a wide variety of metal and plastic , Darlington TABLE 10 â'" DPAK â'" SURFACE M OUNT POWER PACKAGE STYLE 1: 1. 2. 3. 4. BASE COLLECTOR , / R F 1EE 0 | b3b?254 0ÛÛM435 0 | T -9 1 -0 1 TABLE 11 â'" MILITARY SPECIFIED POWER
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sc 6038 MJE12007 mj4647 BD 433NPNTO-126 mje13006 Je105 T0-204A 340D-01 MJ11021

power transistors table

Abstract: MHW6342TN 11 RF LDMOS Power Transistors (continued) Table 3. Cellular - To 500 MHz Frequency Band , RF LDMOS Power Transistors (continued) Table 4. Cellular - To 1000 MHz (continued) - , Freescale Semiconductor RF Product Selector Guide RF LDMOS Power Transistors (continued) Table 7 , WiMAX, WiBro, BWA Power Transistors (continued) Table 1. RF WiMAX, WiBro, BWA - To 6000 MHz , Semiconductor RF Product Selector Guide Wideband RF Power Transistors Table 1. Wideband RF Power
Freescale Semiconductor
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MHW6342TN mrfe6s9060n MW6S010NR1 Motorola Microwave power Transistor MRF7S18125

MFC8040

Abstract: JE1100 . 20 FIELD-EFFECT TRANSISTORS. 21-24 MICROCIRCUIT COMPONENTS. 25 GERMANIUM POWER TRANSISTORS. 26-29 SILICON POWER TR AN SISTO R S , criteria, and the devices are listed in order of these ratings. For other devices, such as transistors , Power R e ctifie rs. 11 RECTIFIER A S S E M B LIE S , ria c s . 17 Power T hyristors
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MFC8040 JE1100 MFC8030 MC1316 Triac 9707 je 3055 Motorola
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