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LTC1728HS5-5 Linear Technology IC 3-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO5, PLASTIC, SOT-23, 5 PIN, Power Management Circuit visit Linear Technology - Now Part of Analog Devices
LTC2927CTS8#PBF Linear Technology LTC2927 - Single Power Supply Tracking Controller; Package: SOT; Pins: 8; Temperature Range: 0°C to 70°C visit Linear Technology - Now Part of Analog Devices Buy
LTC2927CTS8 Linear Technology LTC2927 - Single Power Supply Tracking Controller; Package: SOT; Pins: 8; Temperature Range: 0°C to 70°C visit Linear Technology - Now Part of Analog Devices Buy
LTC2927ITS8 Linear Technology LTC2927 - Single Power Supply Tracking Controller; Package: SOT; Pins: 8; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LTC2927ITS8#TRPBF Linear Technology LTC2927 - Single Power Supply Tracking Controller; Package: SOT; Pins: 8; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LTC2927ITS8#TRMPBF Linear Technology LTC2927 - Single Power Supply Tracking Controller; Package: SOT; Pins: 8; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

power switching transistor 13009

Catalog Datasheet MFG & Type PDF Document Tags

transistor E 13009

Abstract: transistor d 13009 KSE13008/13009 POWER DERATING NPN SILICON TRANSISTOR 0 25 50 75 100 125 150 175 , KSE13008/13009 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH MODE APPLICATION · High Speed Switching · Suitable for Switching Regulator and Motor Control TO-220 ABSOLUTE MAXIMUM RATINGS , KSE13008/13009 DC CURRENT GAIN NPN SILICON TRANSISTOR BASE EMITTER SATURATION VOLTAGE U fe . D C , Emitter Sustaining Voltage: KSE13008 V c e o ( S U S ) : K S E 13009 Emitter Cutoff Current Iebo *DC
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transistor E 13009 transistor d 13009 transistor 13009 D 13009 K 13009 TRANSISTOR E 13009 L KSE13008/13009 KSE13009

transistor E 13009

Abstract: all transistor 13009 /13009 NPN SILICON TRANSISTOR PU (W |. POWER DISSIPATION a so -no iso us ¿or , KSE13008/13009 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH MODE APPLICATION · High Speed Switching · Suitable for Switching Regulator and Motor Control ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage : KSE13008 : KSE13009 Collector Emitter Voltage : KSE13008 : KSE13009 Emitter Base , KSE13008/13009 NPN SILICON TRANSISTOR BAS E EM ITTER S ATU R A TIO N V O LTA G E DC CURRENT GAIN
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all transistor 13009 e 13009 f transistor EN 13009 D 13009 13009 2 transistor EN 13009

transistor E 13009

Abstract: transistor d 13009 subject to Changs without notice. bfci53T31 Doma? 1 N AMER PHILIPS/DISCRETE MJE 13008 MJE 13009 ESE D f-33-13 SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed glass passivated npn power transistor in a T0-220 envelope, intended for use in switching regulators, inverters, motor controls , /DISCRETE MJE 13008 MJE 13009 SSE D bbSBi3i oonmo i T-33-13 VCC=125V Fig. 3 Switching times waveforms , Total power dissipation uptoTmb=25 oc vCEsat max- 'Csat 'C 'CM ptot max. max. max. max
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J 13009 - 2 tr 13009 transistor MJE 13009 13008 TRANSISTOR 13009 E 13009 53T31 MJE13008

E 13009 2

Abstract: e 13009 l specifications are subject to change without notice. J N AMER PHILIPS/DISCRETE MJE 13008 MJE 13009 V ESE D T *" 3 3 - 1 3 SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed glass passivated npn power transistor in a TO-220 envelope, intended fo r use in switching regulators, inverters, motor controls, solenoid/relay drivers and deflection circuits. QUICK REFERENCE DATA MJE13008 13009 ,   bbS3131 O O n i S T S â  MJE 13008 MJE 13009 Silicon diffused power transistors J T
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E 13009 2 EB 13009 D p 13009 EB 13009 transistor mje transistor j 13009 S3T31

e13009

Abstract: transistor 13009 KSE13008/13009 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH MODE APPLICATION â'¢ High Speed Switching â'¢ Suitable for Switching Regulator and Motor Control ABSOLUTE MAXIMUM RATINGS Characteristic , « , % ^^^^^^^^^^^^^ Rev. B FAIRCHILD SEMICONDUCTOR â"¢ ©1999 Fairchild Semiconductor Corporation KSE13008/13009 NPN SILICON TRANSISTOR OC CURRENT GAIN BASE EMITTER SATURATION VOLTAGE COLLECTOR EMITTER SATURATION
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e13009 transistor switch 13009 13009 H power switching transistor 13009 13009 NPN Transistor 13009* transistor

transistor E 13009

Abstract: D 13009 K KSE13008/13009 HIGH VOLTAGE SWITCH MODE APPLICATION · High Speed Switching · Suitable for Switching Regulator and Motor Control NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS Characteristic , ), TURN OFF TIME 594 ELECTRONICS KSE13008/13009 POW ER DERATING NPN SILICON TRANSISTOR , Vcc= 125V, le = 8A s~ C D 4 b > > PI II 593 ELECTRONICS KSE13008/13009 DC CURRENT GAIN NPN SILICON TRANSISTOR BASE EMITTER SATURATION VOLTAQE CO LLECTO R EMITTER SATURATION
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transistor b 595 13009 power transistor E 13009 TRANSISTOR transistor f 3009 E13008

*E13009F

Abstract: all transistor 13009 KSE13008/13009 KSE13008/13009 High Voltage Switch Mode Application · High Speed Switching · Suitable for Switching Regulator and Motor Control 1 TO-220 2.Collector 3.Emitter 1.Base NPN , . A1, January 2001 KSE13008/13009 Typical Characteristics VBE(sat), VCE(sat)[V], SATURATION , ©2001 Fairchild Semiconductor Corporation Rev. A1, January 2001 KSE13008/13009 Typical Characteristics (Continued) 120 PC[W], POWER DISSIPATION 100 80 60 40 20 0 0 25 50 o
Fairchild Semiconductor
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KSE13009FTU cross reference 13009 13009 applications kse13009 h2 PW300 KSE13009F

e 13009 d

Abstract: transistor E 13009 NPN SILICON TRANSISTOR KSE13008/13009 HIGH VOLTAGE SWITCH MODE APPLICATION TO -220 â'¢ High Speed Switching â'¢ Suitable for Switching Regulator and Motor Control ABSOLUTE MAXIMUM , 240 ELECTRONICS 7 ^ 4 1 4 2 002fll5b 042 â  KSE13008/13009 NPN SILICON TRANSISTOR BASE , E R V O LT A G E 241 ELECTRONICS BO 7^4142 0020157 TAT I KSE13008/13009 NPN SILICON TRANSISTOR POWER DERATING 160 140 d is s ip a t io n 120 100 P d
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e 13009 d transistor E 13009 l

SR 13009

Abstract: E 13009 TE13008 · TE13009 Tem ic TELEFUNKEN Semiconductors Silicon NPN High Voltage Switching Transistor Features · · · · · HIGH SPEED technology High reverse voltage Power dissipation Pu,| = 100 W Glass passivation Short switching times Applications Electronic lamp ballast circuits Switch-mode power supplies Absolute Maximum Ratings Tease = 25°C, unless otherwise specified Parameter Collector-emitter voltage Test Conditions Type T E 13008 TE 13009 T E 13008 TE 13009 Symbol VcEO VcEO VCES VcES V
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SR 13009 transistor sr 13009 j 13009 13009 K 13009T BR 13009

transistor 13009

Abstract: kse13009 h2 KSE13008/13009 KSE13008/13009 High Voltage Switch Mode Application · High Speed Switching · Suitable for Switching Regulator and Motor Control 1 TO-220 2.Collector 3.Emitter 1.Base NPN , . A1, January 2001 KSE13008/13009 Typical Characteristics VBE(sat), VCE(sat)[V], SATURATION , ©2001 Fairchild Semiconductor Corporation Rev. A1, January 2001 KSE13008/13009 Typical Characteristics (Continued) 120 PC[W], POWER DISSIPATION 100 80 60 40 20 0 0 25 50 o
Fairchild Semiconductor
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KSE13009H2 KSE13009H2TU KSE13009TU

13009 silicon

Abstract: 13009 TRANSISTOR rZ Z S G S -T H O M S O N * 7# » © i» !© TM « ! M JE 13009 SILICON NPN SWITCHING TRANSISTOR . SGS-THOMSON PREFERRED SALESTVPE DESCRIPTION The MJE13009 is a multiepitaxial mesa NPN transistor. It is mounted in Jedec T0-220 plastic package, intended for use in motor controls, switching regulators, deflection circuits, etc. TO-220 INTERNAL SCHEMATIC DIAGRAM CO (2) 5C C 69 , Current (tp s 1 0 ms) Emitter Current Emitter Peak Current Total Power Dissipation at Tc < 25 °C Storage
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13009 silicon MJE-13009 transistor MJE13009 13009 L T 13009

transistor E 13009

Abstract: 13009 H ST13009 High voltage fast-switching NPN power transistor Features Low spread of dynamic , high switching speed Applications 3 1 2 Switch mode power supplies TO , switching speeds and high voltage capability. It uses a hollow emitter structure to enhance switching , (1) Package Packaging ST13009 13009 L 13009 H TO-220 Tube 1. Product is , 3 Test circuit Test circuit Figure 9. Inductive load switching 1) Fast electronic
STMicroelectronics
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13009L ST-13009 13009 TRANSISTOR equivalent

transistor E 13009 l

Abstract: ST13009 High voltage fast-switching NPN power transistor Features I Low spread of dynamic , Very high switching speed Applications 1 I 2 3 Switch mode power supplies TO , switching speeds and high voltage capability. It uses a hollow emitter structure to enhance switching , (1) Package Packaging ST13009 13009 L 13009 H TO-220 Tube 1. Product is , 3 Test circuit Test circuit Figure 9. Inductive load switching 1) Fast electronic
STMicroelectronics
Original

transistor E 13009

Abstract: 13009 H ST13009 High voltage fast-switching NPN power transistor Features Low spread of dynamic , high switching speed Applications 3 1 2 Switch mode power supplies TO , switching speeds and medium voltage capability. It uses a Hollow emitter structure to enhance switching , (1) Package Packaging ST13009 13009 L 13009 H TO-220 Tube 1. Product is , Figure 9. Inductive load switching test circuit 1) Fast electronic switch 2) Non-inductive
STMicroelectronics
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transistor d 13009

Abstract: transistor E 13009 power transistor for S W IT C H M O D E applications are voltage and current ratings, switching speed , power switching inductive circuits where fall time is critical. T h e y are particularly suited for 115 , IN G There are tw o limitations on the power handling ability of a transistor: average junction , switching transistor is subjected to voltages substantially higher than V c c a^ter the device is co m , major portion o f the transistor power dissipation occurs during the fall time (tfj). F o r this reason
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n752 E 13009 TRANSISTOR motorola e 13009 p AN719 e8015

transistor MJ 13009

Abstract: E13009 . : 1/6 MICROELECTRONICS CORP. HMJE13009R 12 Ampere NPN Silicon Power Transistor Description The HMJE13009R is designed for high-voltage, high-speed power switching inductive circuits where fall , Bias SOA with Inductive Loads@TC=100°C · Inductive Switching Matrix 3 to 12 Amp., 25 and 100°C / TC , Emitter Current-Peak IEM 36 Adc Total Power Dissipation@TC=25°C PD 130 Watts TJ , =500mAdc, VCE=10Vdc, f=1MHz) Output Capacitance (VCB=10Vdc, IE=0, f=0.1MHz) · Switching Characteristics
Hi-Sincerity Microelectronics
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HR200202 transistor MJ 13009 j 13009 to247 mj 13009 13009 to-3p Vcc-125Vdc

E 13009

Abstract: transistor MJ 13009 . : 1/6 MICROELECTRONICS CORP. HMJE13009 12 AMPERE NPN SILICON POWER TRANSISTOR Description The HMJE13009 is designed for high-voltage, high-speed power switching inductive circuits where fall , with Inductive Loads@TC=100°C · Inductive Switching Matrix 3 to 12 Amp., 25 and 100°C / TC @8A, 100°C is 120ns(Typ.) · 700V Blocking Capability. · SOA and Switching Applications Information , Watts 800 mW/°C -65 to +150 °C Total Power Dissipation@TA=25°C Derate above 25°C Total
Hi-Sincerity Microelectronics
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SEC 13009 tr 2 13009 HE200206

diode D45C

Abstract: JE 800 transistor 375 V BIPOLAR POWER TRANSISTOR SELECTOR GUIDE & CROSS REFERENCE [g Available as preferred , preferred chip Device Numbers in Bold type are preferred MOTOROLA 42 BIPOLAR POWER TRANSISTOR , as preferred chip Device Numbers in Bold type are preferred BIPOLAR POWER TRANSISTOR SELECTOR , * Switching tests performed w/special application simulator circuit. See data s leet for details. * New , 80 It lhfel @ 1 MHz, ## Darlington (continued) * V(BR)CEV â' Switching tests performed w
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diode D45C JE 800 transistor L146 IC BD800 340B-03 JF16006A JF10012 JF16212 JF16018 JF16206

D880 voltage regulator

Abstract: B0244C TRANSISTOR 53 ELECTRONICS TRANSISTORS 1-4. High Voltage Transistors 1-4-1. SOT-23 Type Transistors , > (M ) 0.1 0.1 MIN 0.4 0.2 MAX 5 1.5 V m (OFFMV) 56 ELECTRONICS TRANSISTORS 2. POWER , TO-3P Type Transistor ·c (A) 12 Vceo (V) NPN 140 KSD1047 PNP KSB817 Device Type Condition Vce (V) 5 , ELECTRONICS TRANSISTORS 2.2.4 TO-22Q(F) Type Transistor» lc (A) 3 5 7 Vceo (V) NPN 40 100 60 KSD1413 , ELECTRONICS TRANSISTORS 2.3. Switching Transistors 2.3.1 TO-126, TO-220 & TO-3P Type Transistors
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KSD601 B0244C BD64C D880 voltage regulator TIP28C transistor d880 VOLTAGE REGULATOR D880 D880 TRANSISTOR KST06 KST05 BCW71 BCX70G BCX70H BCX70J

transistor E 13009

Abstract: E 13009 L /100 Control output switching supply: COS drives the base of the external switching transistor of the , switching regulator and melody generator, the DTMF dialling, the loudhearing with antilarsen and antidistortion systems, a power supply, a clock and a reset for the microcontroller. Transmit, receive and , impedance adjustable by external components D D D D D Stabilized power supply for peripherals , antidistortion system by automatic gain control versus available current and voltage D Switching regulator in
Temic Semiconductors
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U3810BM antilarsen dynamic ceramic resonator 455 khz log tx6 stl micro sd connector 9331 so U3810BM-CP U3810BM-FN PLCC44 SSO44 88/540/EEC
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