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Part Manufacturer Description Datasheet BUY
2N3055AG ON Semiconductor 15 A, 60 V NPN Bipolar Power Transistor, TO-204 (TO-3), 100-FTRAY visit Digikey
2N3055G ON Semiconductor 15 A, 60 V NPN Bipolar Power Transistor, TO-204 (TO-3), 100-FTRAY visit Digikey
JAN2N3055 Microsemi Corporation Power Bipolar Transistor, 15A I(C), 70V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN visit Digikey
HFA3135IH96 Intersil Corporation 2 CHANNEL, UHF BAND, Si, PNP, RF SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-6 visit Intersil
HFA3096B Intersil Corporation 5 CHANNEL, UHF BAND, Si, NPN AND PNP, RF SMALL SIGNAL TRANSISTOR, MS-012-AC, MS-012AC, 16 PIN visit Intersil
HFA3096B96 Intersil Corporation 5 CHANNEL, UHF BAND, Si, NPN AND PNP, RF SMALL SIGNAL TRANSISTOR, MS-012AC visit Intersil

pnp transistor 2N3055

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: 2N3055(NPN), MJ2955(PNP) Preferred Device Complementary Silicon Power Transistors , Number: 2N3055/D 2N3055(NPN), MJ2955(PNP) à à à à à à , Area http://onsemi.com 2 2N3055(NPN), MJ2955(PNP) 500 200 300 VCE = 4.0 V TJ = 150 , ' Voltages, MJ2955 (PNP) http://onsemi.com 3 10 2N3055(NPN), MJ2955(PNP) PACKAGE DIMENSIONS TOâ , 0 Package 2N3055 20 TOâ'204AA (Pbâ'Free) 100 Units / Tray TC, CASE TEMPERATURE ON Semiconductor
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2N3055 NPN Transistor 2N3055 power amplifier circuit diagram 2n3055 application note 2n3055 circuit diagram 2N3055/D
Abstract: 2N3055(NPN), MJ2955(PNP) Preferred Device Complementary Silicon Power Transistors . . . , Area http://onsemi.com 2 2N3055(NPN), MJ2955(PNP) 500 300 hFE , DC CURRENT GAIN 200 100 70 50 , Figure 3. DC Current Gain, 2N3055 (NPN) Figure 4. DC Current Gain, MJ2955 (PNP) VCE , , MJ2955 (PNP) http://onsemi.com 3 2N3055(NPN), MJ2955(PNP) PACKAGE DIMENSIONS TO-204 (TO , CHARACTERISTICS Characteristic Symbol RqJC Max Unit xxxx55 = Device Code xxxx= 2N3055 or MJ2955 A = ON Semiconductor
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2n3055 pin out diagram pin out TRANSISTOR 2n3055 2N3055 typical applications 2N3055 power amplifier circuit 2n3055 circuit 2N3055 power circuit
Abstract: 2N3055(NPN), MJ2955(PNP) Preferred Device Complementary Silicon Power Transistors , . Publication Order Number: 2N3055/D 2N3055(NPN), MJ2955(PNP) Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ , Region Safe Operating Area http://onsemi.com 2 2N3055(NPN), MJ2955(PNP) 500 200 TJ = 150 , , COLLECTOR CURRENT (AMP) Figure 7. "On" Voltages, 2N3055 (NPN) Figure 8. "On" Voltages, MJ2955 (PNP) http://onsemi.com 3 10 2N3055(NPN), MJ2955(PNP) PACKAGE DIMENSIONS TO-204 (TO-3) CASE 1-07 ON Semiconductor
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2N3055G MJ2955 2n3055 200 watts amplifier MJ2955 300 watts amplifier power transistor 2n3055 MJ2955G DC variable power with 2n3055
Abstract: Figure 3. DC Current Gain, 2N3055 (NPN) Figure 4. DC Current Gain, MJ2955 (PNP) VCE , 2N3055, MJ2955 Preferred Device Complementary Silicon Power Transistors . . . designed for , Characteristic Symbol RqJC Max Unit xxxx55 = Device Code xxxx= 2N3055 or MJ2955 A = Assembly Location , reliability may be affected. 160 ORDERING INFORMATION Device 2N3055 2N3055G Package TO-204AA TO , © Semiconductor Components Industries, LLC, 2004 35 April, 2004 - Rev. 4 Publication Order Number: 2N3055 ON Semiconductor
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2N3055 transistor 2n3055 amplifier MJ2955 TRANSISTOR 2n3055h data transistor 2n3055 mj2955 safe operating area
Abstract: A * V cE (*t) * NPN 2N3055 PNP MJ2955 11 v @ 'c = 4 0 A - 'b = 400 , 17.30 4.36 11.18 2N3055 NPN / MJ2955 PNP ELECTRICAL CHARACTERISTICS ( Tc = 25°C unless otherwise , the limitations imposed by second breakdown. 2N3055 NPN / MJ2955 PNP NPN 2N3055 DC C U R R E N T , 2.0% (2 ) f T = | K » | * f tort MHz 2.5 15 120 2N3055.MJ2955 AC TIVE REG ION SAFE O PERATING AREA(SOA) There are two limitation on the power handling ability of a transistor: average junction -
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2n3055 collector characteristic curve Transistor MJ2955 Mj2955 power transistor t 2N3055 2N3055 curve 2n3055 pnp
Abstract: mA MAXIMUM RATINGS NPN PNP 2N3055 MJ2955 Characteristic Symbol Rating Unit Collector-Emitter , ://www.bocasemi.com 2N3055 NPN / MJ29S5 PNP ELECTRICAL CHARACTERISTICS ( Tc = 25°C unless otherwise noted , (VOLTS) http://www.bocasemi.com 2N3055 NPN / MJ2955 PIMP NPN 2N3055 DC CURRENT GAIN PNP MJ2955 DC , ) 15 120 There are two limitation on the power handling ability of a transistor: average junction temperature and second breakdown safe operating area curves indicate IC-VCE limits of the transistor that must -
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npn 2n3055 2N3055/MJ2955
Abstract: 20 to 70 at IC = 4.0A. · VCE(sat) = 1.1V (Maximum) at IC = 4.0A, IB = 400mA. NPN 2N3055 PNP , imposed by second breakdown. VCE, Collector Emitter Voltage (Volts) NPN 2N3055 PNP MJ2955 DC , PNP MJ2955 "ON" Voltages "ON" Voltages V, Voltage (Volts) V, Voltage (Volts) NPN 2N3055 , ) Package 115 TO-3 Page 4 Type Part Number NPN 2N3055 PNP MJ2955 31/05/05 V1 , 2N3055, MJ2955 Complementary Power Transistors Designed for use in general-purpose amplifier and Multicomp
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2n3055 malaysia 2n3055 IC transistor 2N3055 2N3055 MJ2955 2n3055 pin 2N3055 equivalent transistor NUMBER
Abstract: NPN PNP 2N3055 MJ2955 Characteristic Symbol Rating Unit Collector-Emitter Voltage VCEO 60 V , NPN / MJ2955 PIMP NPN 2N3055 DC CURRENT GAIN PNP MJ2955 DC CURRENT GAIN 300 100 70 50 0.1 ~ T , 0.92 1.09 G 1.38 1.62 H 29.90 30.40 I 16.64 17.30 J 3.88 4.36 K 10.67 11.18 2N3055 NPN / MJ29S5 PNP ELECTRICAL CHARACTERISTICS ( Tc = 25°C unless otherwise noted ) Characteristic Symbol Min Max , are two limitation on the power handling ability of a transistor: average junction temperature and -
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2N3055M 2N3055MJ
Abstract: . 1995 Motorola Bipolar Power Transistor Device Data 1 2N3055 MJ2955 ELECTRICAL CHARACTERISTICS , 2N3055 MJ2955 NPN 2N3055 PNP MJ2955 500 200 300 VCE = 4.0 V TJ = 150°C VCE = 4.0 , Motorola Bipolar Power Transistor Device Data 3 2N3055 MJ2955 PACKAGE DIMENSIONS A N NOTES , Transistor Device Data *2N3055/D* 2N3055/D Motorola , MOTOROLA Order this document by 2N3055/D SEMICONDUCTOR TECHNICAL DATA NPN 2N3055 Motorola
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2N3055 MOTOROLA 2N3055 NPN MOTOROLA POWER TRANSISTOR 2n3055-1 2N3055 JAPAN 2N3055 TO-3 2n3055 datasheet
Abstract: , MJ2955 (PNP) http://onsemi.com 3 10 2N3055, MJ2955 PACKAGE DIMENSIONS TO-204 (TO-3) CASE , 2N3055, MJ2955 Preferred Device Complementary Silicon Power Transistors . . . designed for , /°C TJ, Tstg ­ 65 to + 200 °C xxxx55 = Device Code xxxx= 2N3055 or MJ2955 A = Assembly , Device Package Shipping 2N3055 TO-204AA 100 Units / Tray MJ2955 TO-204AA 100 , Publication Order Number: 2N3055/D 2N3055, MJ2955 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise ON Semiconductor
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DC variable power with 2n3055 datasheet mj2955 TO-3 2N3055 transistor equivalent 22N3055 2n3055 equal
Abstract: applications. 2N3055 * PNP MJ2955 * *ON Semiconductor Preferred Device NPN · DC Current Gain - hFE = , Publication Order Number: 2N3055/D 2N3055 MJ2955 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ , Registration. (2N3055) (1) Pulse Test: Pulse Width v 300 us, Duty Cycle v 2.0%. http://onsemi.com 2 2N3055 MJ2955 20 IC, COLLECTOR CURRENT (AMP) 10 6 4 2 1 0.6 0.4 0.2 6 BONDING WIRE LIMIT THERMALLY , ) 60 500 us 250 us 2N3055, MJ2955 50 us dc 1 ms There are two limitations on the power handling ON Semiconductor
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2n3055 application 2N3055 MEXICO MJ2955 mexico transistor 2n3055 h parameters 2n3055 safe operating area
Abstract: Temperature Max. Operating Junction Temperature 2N3055 PNP Unit MJ2955 100 V 70 V 60 , 2N3055 MJ2955 ® COMPLEMENTARY SILICON POWER TRANSISTORS s s STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY NPN-PNP DEVICES DESCRIPTION The 2N3055 is a silicon Epitaxial-Base Planar NPN transistor mounted in Jedec TO-3 metal case. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers. The complementary PNP type is STMicroelectronics
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2N3055 series voltage regulator 2n3055 voltage regulator 2N3055 ST st 2n3055 complementary npn-pnp complementary npn-pnp power transistors P003F
Abstract: overall value. © Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 2N3055 , 2N3055 MJ2955 NPN 2N3055 PNP MJ2955 500 200 300 VCE = 4.0 V TJ = 150°C VCE = 4.0 , Motorola Bipolar Power Transistor Device Data 3 2N3055 MJ2955 PACKAGE DIMENSIONS A N NOTES , Transistor Device Data *2N3055/D* 2N3055/D Motorola , MOTOROLA Order this document by 2N3055/D SEMICONDUCTOR TECHNICAL DATA NPN 2N3055 Motorola
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2N3055-D hfe 2n3055
Abstract: 2N3055 MJ2955 COMPLEMENTARY SILICON POWER TRANSISTORS â  STMicroelectronics PREFERRED SALESTYPES . COMPLEMENTARY NPN-PNP DEVICES DESCRIPTION The 2N3055 is a silicon Epitaxial-Base Planar NPN transistor mounted in Jedec TO-3 metal case. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers. The complementary PNP type is , cto r-B a se V olta g e ( I e = 0) 2N 3055 PNP Unit MJ2955 100 V 70 V C -
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SC08820 SC08830
Abstract: 2N3055(NPN), MJ2955(PNP) Preferred Device Complementary Silicon Power Transistors , overall value. 2N3055(NPN), MJ2955(PNP) Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ Î Î Î , Area 2 2N3055(NPN), MJ2955(PNP) PACKAGE DIMENSIONS TO-204 (TO-3) CASE 1-07 ISSUE Z NOTES , -204AA 100 Units / Tray MJ2955G 0 Package 2N3055 20 TO-204AA (Pb-Free) 100 Units / Tray , = 1.0 s, Nonrepetitive) DYNAMIC CHARACTERISTICS *Indicates Within JEDEC Registration. (2N3055 ON Semiconductor
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TO-204AA transistor MJ-20 OF transistor 2n3055 to-3 package power transistor mex 2N30 transistor npn 2n3055g
Abstract: 2N3055 MJ2955 ® COMPLEMENTARY SILICON POWER TRANSISTORS s s ST PREFERRED SALESTYPES COMPLEMENTARY NPN-PNP DEVICES DESCRIPTION The 2N3055 is a silicon epitaxial-base NPN transistor in Jedec TO , Voltage (I E = 0) 2N3055 PNP Unit MJ2955 100 V V CER Collector-Emitter Voltage (R BE , and high fidelity amplifiers. The complementary PNP type is MJ2955. 1 2 TO-3 INTERNAL , A 7 A 115 W -65 to 200 o C 200 o C For PNP types voltage and STMicroelectronics
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2N3055 specification 2N3055 schematic diagram value of 2n3055 2n3055 25
Abstract: general­purpose switching and amplifier applications. 2N3055 * PNP MJ2955 * *ON Semiconductor Preferred Device , April, 2001 ­ Rev. 2 Publication Order Number: 2N3055/D 2N3055 MJ2955 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ , , IC = 1.0 Adc, f = 1.0 kHz) fhfe kHz *Indicates Within JEDEC Registration. (2N3055) (1) Pulse Test: Pulse Width v 300 us, Duty Cycle v 2.0%. http://onsemi.com 2 2N3055 MJ2955 20 IC, COLLECTOR , ) SECOND BREAKDOWN LIMIT 10 20 40 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 60 500 us 250 us 2N3055, MJ2955 ON Semiconductor
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Application Notes 2n3055 Amplifier
Abstract: Operating Area 2 Motorola Bipolar Power Transistor Device Data 2N3055 MJ2955 NPN PNP MJ2955 , ) Figure 5. "On" Voltages Motorola Bipolar Power Transistor Device Data 3 2N3055 MJ2955 PACKAGE , MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N3055/D Com plem entary , 1-1 Vdc (Max) @ Iq = 4 Adc Excellent Safe Operating Area 2 N3 0 5 5 * PNP * NPN M J2955 ` , 2N3055 MJ2955 ELECTRICAL CHARACTERISTICS (T q = 25°C unless otherwise noted) Characteristic *OFF -
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Abstract: 2N3055 NPN MJ2955 PNP SILICON PLANAR POWER TRANSISTOR TO-3 Metal Can Package ELECTRICAL , 2N3055 NPN MJ2955 PNP SILICON PLANAR POWER TRANSISTORS TO-3 Metal Can Package General Purpose , kgs Page 3 of 4 2N3055 NPN MJ2955 PNP Notes TO-3 Metal Can Package Disclaimer The , Width Continental Device India
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pin configuration transistor 2n3055 CDIL 2N3055 Transistor pin configuration transistor mj2955 J 2N3055 general purpose 2n3055 transistors C-120 MJ2955R 291201E
Abstract: , MJ2955 (PNP) http://onsemi.com 3 10 2N3055, MJ2955 PACKAGE DIMENSIONS TO-204 (TO-3) CASE , 2N3055, MJ2955 Preferred Device Complementary Silicon Power Transistors . . . designed for , DIAGRAM °C/W Operating and Storage Junction Temperature Range xxxx55 = Device Code xxxx= 2N3055 , . ORDERING INFORMATION Package Shipping 2N3055 TO-204AA 100 Units / Tray 2N3055G TO , Rev. 4 1 Publication Order Number: 2N3055/D 2N3055, MJ2955 ELECTRICAL CHARACTERISTICS (TC ON Semiconductor
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