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Part Manufacturer Description Datasheet BUY
TIL601 Texas Instruments TIL601 N-P-N Planar Silicon Phototransistors visit Texas Instruments
TIL604 Texas Instruments TIL604 N-P-N Planar Silicon Phototransistors visit Texas Instruments
TIL603 Texas Instruments TIL603 N-P-N Planar Silicon Phototransistors visit Texas Instruments
TIP117 Texas Instruments PnP Darlington - Connected Silicon Power Transistors 3-TO-220 visit Texas Instruments
TIP115 Texas Instruments PnP Darlington - Connected Silicon Power Transistors 3-TO-220 visit Texas Instruments
HFA3135IH96 Intersil Corporation 2 CHANNEL, UHF BAND, Si, PNP, RF SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-6 visit Intersil

pnp phototransistor

Catalog Datasheet MFG & Type PDF Document Tags

pnp phototransistor

Abstract: LASCR . 8 - Typical pnp phototransistor action of LASCR. B ecause o f its high voltage jun ctio n , Light generated current in phototransistor. T he form ula show s that the sensitivity o f this tran , Phototransistor switching speed. T he high value o f hFE and large collector-base ju n ctio n area required for , - Fig. 5 - Use of phototransistor at very low light levels. T his circuit w ill turn the load on w , ays be less than the phototransistor. D ark current effe c ts, as w ith p hototransistors, are also am
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long range Phototransistor Detector 880nm

Abstract: IR Phototransistor Detector 880nm (ANODE TO GATE REGION CATHODE OPEN) Fig. 39 - Characteristic curves - pnp phototransistor action of , i) are capable o f most efficient coupling. ULTRAVIOLET I S? 1 0 0 o 40 PHOTOTRANSISTOR , phototransistor or photodarlington. The accuracy of this method rests on the conversion efficiency of silicon, a , phototransistor which has an active area of 0.25mm square and peak response around 850nm, this corresponds to , E D and 0.4/iA per mW/cm2 using 2 8 7 0 °K tungsten light. The L14N phototransistor, with 1mm2
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pnp phototransistor

Abstract: transistor Comparison Tables A p p l i c at i o n N o t e AN3009 Phototransistor Switching Time Analysis Authors: Van N , silicon phototransistor. Optical isolation sends a beam of infrared energy to an optical receiver in a , addresses the rise and fall time characteristics of a phototransistor used in common circuits, compared to , access pin to the base of the phototransistor, allowing a bias voltage to the base, to improve response , phototransistor. Any external bias configuration must consider noise limitation, as well as not loading
California Eastern Laboratories
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pnp phototransistor transistor Comparison Tables transistor 9427 314 optocoupler Transistor 2N4402 Common collector configuration basic

2N3568

Abstract: optocoupler pnp allowable IF versus maximum ambient temperature. Figure 2. PNP driver VCC 620 Values for Table 1 , . Rb Figure 5. PNP current booster / g Rb Io Since the transistor in the optocoupler is treated as a two-terminal device, no operational difference exists between the NPN and the PNP circuits , rating of the phototransistor is irrelevant since its maximum collector-emitter voltage is the base , Load R1 R1 Q1 Q2 R b2 V­ V­ Figure 8. PNP HV booster Figure 10. PNP Darlington HV
Infineon Technologies
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2N3568 2N3638 optocoupler pnp 2N3638 transistor Motorola transistors MJE3055 optocoupler NPN optocoupler pnp or npn 1-888-I

opto-coupler darlington pnp

Abstract: 2N3568 . Figure 2. PNP driver Values for Table 1 are based on a 1.33 mW/°C derate from the 100 mW at 25 , =600 mV/10 ohms=60 mA, so le(Q1)=210 mA. Rb Figure 5. PNP current booster Rb Maximum power in , NPN and the PNP circuits. R b provides a return path for ICBO of the output transistor. Its value is , stand off BVCEO of Q1. The voltage rating of the phototransistor is irrelevant since its maximum , Q2 R b2 V­ V­ Figure 8. PNP HV booster V+ Figure 10. PNP Darlington HV booster V
Siemens
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opto-coupler darlington pnp OPTOCOUPLER HAND BOOK transistor current booster circuit mje3055 data transistor MJE3055 optocoupler base resistor

opto-coupler darlington pnp

Abstract: 2n3568 two such drive circuits. Revision 1.3, 24-Nov-03 17467 Figure 2. PNP driver 6.3 Table 2 , Figure 5. PNP current booster Since the transistor in the optocoupler is treated as a two-terminal device, no operational difference exists between the NPN and the PNP circuits. R b provides a return , rating of the phototransistor is irrelevant since its maximum collector-emitter voltage is the base , Document Number: 83704 Revision 1.3, 24-Nov-03 V­ Figure 8. PNP HV booster Unlike the
Vishay Semiconductors
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motorola optocoupler MJE205 optocoupler drive relay motorola mje3055 relay driver circuit using transistor 124 OPTOCOUPLER

opto-coupler darlington pnp

Abstract: transistor current booster circuit the 100 mW at 25°C power rating. Table 1. Figure 2. PNP driver VCC 620 T2L Input 1.2 K , , so le(Q1)=210 mA. Rb Figure 5. PNP current booster / g Rb Io Since the transistor in , and the PNP circuits. R b provides a return path for ICBO of the output transistor. Its value is: R b , Q1. The voltage rating of the phototransistor is irrelevant since its maximum collector-emitter , Load R1 R1 Q1 Q2 R b2 V­ V­ Figure 8. PNP HV booster Figure 10. PNP Darlington HV
Vishay Intertechnology
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k 2750 transistor 12 volt dc operated power led circuit TRANSISTOR FOR LED 6 VOLT 210 optocoupler K39 2 GATE darlington transistor power

cny17-3 options

Abstract: optocoupler based isolated dc to dc converter this circuit, when the ispPAC-POWR1208's output goes LOW, it sinks current from the base of the PNP , output, so that the PNP transistor is now turned ON when the digital output is HIGH. Note that a similar , LED (emitter) and a phototransistor (detector) molded into a single package (Figure 8a) in such a way that the light from the LED is sensed by the phototransistor (Figure 8b). Because there is no electrical connection between the LED and phototransistor, data can be transmitted across potential
Lattice Semiconductor
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AN6046 CNY17-3 cny17-3 options optocoupler based isolated dc to dc converter simple phototransistor phototransistor 3 pin NPN Transistor 10A 24V specifications of led and phototransistor PAC-POWR1208 1-800-LATTICE

pnp phototransistor

Abstract: RNI55W =1mA RL =100n Tf Phototransistor RNI82B PNP Black Plastic Phototransistor A b solution M axim un , Phototransistors 5mm Phototransistor RNI55W W ater Clear Lens A b solution M axlm un Rating (Ta=25°) Coi ector to -E m itte ' breakdown v o lta g e .30V Em itter-to-C ollector breakdown v o lta g e , Dark Current Rise Time (10% to 90%) Fall Time (90% to 10%) Collect Current Ratio of 2 Phototransistor
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7400 TTL

Abstract: IC TTL 7400 phototransistor mounted together in a DIP package. When forward current (IF) is passed through the Gallium , transmitted through an optical coupling medium and falls on the surface of the NPN phototransistor , positive voltage to the collector of the phototransistor, the device operates as a photo diode. The high , current from the phototransistor (IC or IE), to the input current in the Gallium Arsenide diode is called , Circuits Figure 5. Vcc The output of the phototransistor can directly drive the input of standard
Vishay Intertechnology
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7400 TTL IC TTL 7400 Phototransistor with base emitter 7400 logic gate ic IC TTL 7400 propagation delay digital ic 7400 series

pnp phototransistor

Abstract: 7400 logic gate ic phototransistor mounted together in a DIP package. When forward current (IF) is passed through the Gallium , transmitted through an optical coupling medium and falls on the surface of the NPN phototransistor , positive voltage to the collector of the phototransistor, the device operates as a photo diode. The high , typical 2 µs rise time for 100 results. The ratio of the output current from the phototransistor (IC or , Sensing Circuits Figure 5. Vcc The output of the phototransistor can directly drive the input of
Infineon Technologies
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7400 TTL datasheet TTL 7400 propagation delay in IC TTL 7400 phototransistor with amplifier 7400 family TTL TTL 2 input 7400 with one input at constant 1 propagation delay

pnp phototransistor

Abstract: 7400 TTL emitting diode, and a silicon phototransistor mounted together in a DIP package. When forward current (IF , of the NPN phototransistor. Phototransistors are designed to have large base areas, and hence a , emitter, and apply a positive voltage to the collector of the phototransistor, the device operates as a , time for 100 results. The ratio of the output current from the phototransistor (IC or IE), to the , . Vcc 10K The output of the phototransistor can directly drive the input of standard logic circuits
Siemens
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information OF ic 7400 phototransistor "linear output" 7400 ttl gate digital ic 7400 noise diode IC 7400

PHOTOELECTRIC SENSORS

Abstract: CP18SDPSCM sensor, PNP, LO/DO, plug-in receptacle type CP18D2PNSCM Diffuse reflective, metal barrel CP18 , , PNP, LO, plug-in receptacle type ACCESSORIES ORDER GUIDE Catalog Listing Swivel type mounting , Operating modes NPN (sinking) or PNP (sourcing) LO/DO LO Response time 1.5 ms Supply , Schematic Diagram Typical Schematic Key 1. Light Source (LED) 2. Receiver (phototransistor) 3. Signal , Series WIRING DIAGRAMS Thru-scan Male Receptacle End View Thru-scan DARK OPERATE, Receiver, PNP
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CP18SDNSCM CP18SDPSCM PHOTOELECTRIC SENSORS photoelectric sensor circuit diagram schematic photoelectric sensor IR LED 940 nm CP18D2DPSCM CPZ18B03

TIP 121 transistor

Abstract: TIP 41 transistor : Transistor NPN/PNP or SCR, make or break switching · High chemical resistance to most acids and bases · , E P Type Housing Output status Output type PNP output Type Selection - DC Types , Break switching Ordering no. Transistor PNP Make switching Ordering no. Transistor PNP Break , Specifications Transistor NPN/PNP Rated operational voltage Rated operational current Continuous Voltage , mounting: ± 2.5 mm 0 - 100 lux 5 Hz VP, unmodulated Specifications (cont.) Transistor NPN/PNP
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TIP 121 transistor TIP 41 transistor ir transmitter receiver ir water level sensor transistor tip 121 infrared sensor transmitter and receiver circuit VP01/03 VP02/04 VP01/02 VP03/04 103973X 228/1-G

ir transmitter receiver

Abstract: pnp phototransistor amplifier Output: NPN or PNP, 4-wire (NO & NC) Housing: Stainless steel or nickel plated brass Tip , . PNP, Make & break switching Cable Ordering no. PNP, Make & break switching M12 Plug , or PNP output. The light source is a Ga-As diode emitting modulated, infrared light in short , internally to the phototransistor placed in the other side of the sensor head (fig. 1), provided that the , Fig. 1 Receiver 4 BK 2 WH 3 BU PNP VP.M.A 1 BN 19 ø14.5 17 2 WH 4 BK 3
Carlo Gavazzi
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VPA2MPA-1 VPA2MPA vpa1mna1 liquid level sensor circuit VPA1MPA-1 VPB1MPA

Q3MB-202P

Abstract: TACHOMETER omron 4-20 ma optional SCR AC output and NPN or PNP DC output Switch selectable Light-ON/Dark-ON operation Built-in , VDC (G3KD-YR2P-1 optional) Complementary PNP, 200 mA, 30 VDC (G3KD-YR2P-2 optional) 15 ms max. (relay , ) Complementary NPN and PNP, 100 mA, 40 VDC (E3C-WH4F) NPN, 100 mA max., 24 VDC (E3C-JC4P) PNP, 100 mA max., 24 , mA, 30 VDC max. E3S-A 1 . E3S-A 2 . E3S-A 6 . E 3 S - A J7 J PNP transistor, 100 mA, 30 VDC max. E3S-AZ3 J , E3S-A 4T, E3S-AI 87 , E3S-A j 9 - NPN, 50 mA max. E3S-A; .2 ', E3S-A 7 PNP, 50 mA max. E3S-A
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Q3MB-202P TACHOMETER omron 4-20 ma Q3MB-202PL E3A2-DS70M4T Q3M-202PL Q3NA-210B

H11A10

Abstract: aaan CURRENT THRESHOLD SWITCH H11A10 Ga As Infrared Emitting Diode & NPN Silicon Photo-Transistor The GE Solid State H11A10 is a gallium arsenide infrared emitting diode coupled with a silicon phototransistor in a d , °C photo-transistor Power Dissipation ta = 25°C *300 milliwatts Power Dissipation tr = 25°C *500 milliwatts , PHOTO-TRANSISTOR SYMBOL MIN. TYP. MAX. UNITS Forward Voltage (Ip=10mA) vF 1.5 volts Breakdown Voltage (lc , a D41K1 PNP and interchanging the collector and emitter connections, provides an over-current alarm
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aaan threshold switch BRX 70 H17A1 E51868 2NS306 CI06B

micro switch on-off

Abstract: FE8V-TT2 pulse infrared LED, phototransistor receiver, and amplifier circuitry with solid state output in a , operated, current sinking, (NPN) output FE8V-TB6-M 10 to 28 VDC; dark operated, current sourcing (PNP) output FE8V-TD6-M 10 to 28 VDC; light operated, current sourcing (PNP) output FE8V-TE6-M 85 , (relay, solenoid, etc.) is directly energized. Sinking (NPN) Sourcing (PNP) Honeywell É' MICRO
Honeywell
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micro switch on-off FE8V-TT2

TIP 41 transistor

Abstract: transistor BU 110 : Transistor NPN/PNP or SCR, make or break switching · High chemical resistance to most acids and bases · , solvents. VP 0 3 E P Type Housing Output status Output type PNP output Type Selection - DC , . Transistor NPN Break switching Ordering no. Transistor PNP Make switching Ordering no. Transistor PNP Break switching Polysulphone Polyamide 12 VP 02 E VP 04 E VP 01 E VP 03 E VP 02 EP , 01-230TB Specifications Transistor NPN/PNP Rated operational voltage Rated operational current
Carlo Gavazzi
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VP01E VP03E VP03EP VP02EP VP04EP transistor BU 110 transistor ac 176 VP01EP VP02E VP04E

TIP 41 transistor

Abstract: ir water level sensor : Transistor NPN/PNP or SCR, make or break switching · High chemical resistance to most acids and bases · , E P Type Housing Output status Output type PNP output Type Selection - DC Types , Break switching Ordering no. Transistor PNP Make switching Ordering no. Transistor PNP Break , Specifications Transistor NPN/PNP Rated operational voltage Rated operational current Continuous Voltage , , unmodulated Specifications (cont.) Transistor NPN/PNP SCR output AC types IP 67 -20 to +80ºC (-4 to
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TIP 110 transistor ir receiver transistor optical sensor with an amplifier beam break VP01- VP02-
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