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LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

pnp germanium transistor

Catalog Datasheet MFG & Type PDF Document Tags

pnp germanium transistor

Abstract: 2N1305  as»« #%s Central Semiconductor corp. Central Semiconductor Corp. centralâ"¢ semiconductor Corp. 145 Adams Avenue Hauppauge, New York 11788 â â™¦iHI 2N1303 2N1305 2N1307 2N1309 PNP GERMANIUM TRANSISTOR JEDEC TO-5 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N1303, 2N1305, 2N1307 and 2N1309 are Germanium PNP Transistors designed for computer and switching applications. MAXIMUM RATINGS (TA = 25°C ) Collector Base Voltage VcBO Emitter Base Voltage VeBO Collector Current IC Power Dissipation PT
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pnp germanium transistor transistor 2N1309 germanium transistor germanium transistor pnp power germanium transistor pnp Germanium power

pnp germanium transistor

Abstract: transistor YA Centra! Semiconductor corp. Central semiconductor corp. 145 Adams Avenue Hauppauge, New York 11 788 ♦I 2N398 2N398A 2N398B PNP GERMANIUM TRANSISTOR JEDEC TO-5 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N398 Series types are PNP Germanium Transistors designed for high voltage applications. MAXIMUM RATINGS (TA=25°C) SYMBOL 2N398 2N398A 2N398B UNIT Collector-Base Voltage VCB0 105 105 105 V Collector-Emitter Voltage VCES 105 105 105 V Emitter-Base Voltage VEB0 50 50 75 V Col
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transistor YA Transistor 2N398 pnp germanium transistor 2N398 transistor case To 105 YA105 11MS2

pnp germanium transistor

Abstract: ^s.mi-t-onau.ato'i U^ioaueti, One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 2N200 P-N-P GERMANIUM TRANSISTOR Translator Outline TO-1 *ab*olut« maximum ratlngi at M*C free-air temperature (unleu otherwise noted) .240- 25 v Collector-Base Voltage MAX. 25 y Emitter-Base Voltage Collector Current 300 ma Total Device Dissipation at (or below) 25°C 150 mw Operating Collector Junction Temperature . 85°C .4KT
New Jersey Semiconductor
Original

pnp germanium transistor

Abstract: zStmi-Conducko'i ZPioduati, Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 2N527 (GERMANIUM) PNP germanium transistor for switching and amplifier applications in the audio-frequency range. MAXIMUM RATINGS Rating Collector -Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Symbol V CB VCEO V EB 'c Storage and Operating Temperature T.tg' TJ Collector Dissipation
New Jersey Semiconductor
Original

pnp germanium transistor

Abstract: ^s-mi-donduatoi , fine. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 U.S.A. -526 GERMANIUM) PNP germanium transistor for switching and amplifier applications in the audio-frequency range. MAXIMUM RATINGS Symbol Rating Collector -Base Voltage Valu« 45 Vdc 30 Vdc IS Vdc 500 mAdc -85 to *100 °C 225 mW 0.333 °C/mW 0.15 °C/mW VCB Collector -Emitter Voltage V CEO
New Jersey Semiconductor
Original

2N599 JAN

Abstract: 2N599 (See 6.2) MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, TYPE 2N599 1. SCOPE 1.1 Description,- This specification covers the detailed requirements for a PNP germanium transistor and is in , quality conformance inspection information pertinent to the transistor Inspection lot shall be furnished by the transistor supplier and shall accompany each transistor shipment from the inspection lot to , .Base Lead 3.Collector Figure 1 - Outline dimensions of transistor type 2N599. (D F -o
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MIL-S-19491 2N599 JAN N468 Y2 TRANSISTOR CONFORMANCE MIL-S-19500/166C 19500/166B MIL-S-19500 MIL-STD-750 SH70SS

2N1195

Abstract: pnp germanium transistor SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, LOW-POWER TYPE 2N1195 This specification is , specification covers the detail requirements for a low-power. PNP, germanium, transistor. 1.2 Physical , . Transistor shall be of the design, construction, and physical dimensions shown on figure 1. 3. 3.1 Lead , -19500 may be omitted from the body of the transistor at the option of the manufacturer: (a) Country of , (1.37+.03,-.00 mm) below the seating plane of the transistor max dia leads shall be within ,007 (.18 mm) of
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TRANSISTOR SUBSTITUTION MIL-S-19500/71D MIL-S-19500/71C MIL-STD-202 L-STD-750

2N1358

Abstract: pnp germanium transistor SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, HIGH-POWER TYPE 2N1358 This specification is , specification covers the detail requirements for a high-power, PNP, germanium transistor. 1.2 Physical , Design, construction, and physical dimensions. Transistor shall be of the design, construction, and , -19500 may be omitted from the body of the transistor at the option of the manufacturer: (a) Country of , gage for transistor type 2N1358« 4 MIL-S-19500/122C * 4.3.4 Group B and group C life-test samples
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FY 3011 MIL-S-19500/122B

pnp germanium transistor

Abstract: boonton 91-6c MIL-S-19500/77C 6 March 1968 SUPERSEDING MIL-T- 19500/77B 5 July 1961 (See 6. 3. ) MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, LOW-POWER This specification is mandatory for , specification covers the detail requirements for a low-power, PNP, germanium, transistor. * 1. 2 Physical , following marking specified in MIL-S-19500 may be omitted from the body of the transistor at the option of , RFVM to 'Sample' jack. G. Insert transistor into socket, apply bias, and set 10 Mllz level for a 1.59
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boonton 91-6c UG-491A MIL-S-19500/77B

K 2056 transistor

Abstract: pnp germanium transistor ) MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, LOW-POWER TYPE 2N331 This , Scope. This specification covers the detail requirements for an audio-frequency, PNP, germanium transistor. 1.2 Physical dimensions. See figure 1 (TO - 5). * 1.3 Maximum ratings. Pel/ TA = 25° c VCBO , specified in MIL-S-19500 may be omitted from the body of the transistor at the option of the manufacturer , 1. Physical dimensions of transistor t ype 2N331 (TO-5), 6 MTT_Q_1 QZOTl// n ruti-v GAGE
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K 2056 transistor BUL 3810 2N3317 MIL-S-19500/4C MIL-8-10500/4D

MC 151 pnp

Abstract: MC 3041 ) MILITARY SPECIFICATION SEMICONDUCTOR DEVICE; TRANSISTOR, PNF GERMANIUM, LOW POWER TYPE 2N1142 This spà , Scope. This specification covers the detail requirements for a low-power, high-frequency, PNP, germanium transistor. 1. 2 Physical dimensions. See figure 1 (modified TO-39). 1. 3 Ratings. See table I. TABLE I , -19500. 3= 3 Design; construction. and physical dimensions. - Transistor shall be of the design , MIL-S-19500 may be omitted from the body of the transistor at the option of the manufacturer: (a
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MC 151 pnp MC 3041 MC 151 transistor VHF power TRANSISTOR PNP TO-39 MC 140 transistor MIL-S-19500/87A MIL-S-19500/87 MLL-S-19500/87A

OC 74 germanium transistor

Abstract: OC 140 germanium transistor SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, LOW-POWER TYPE 2N39GA This specification 1b , specification covers the detail requirements for a low-power, PNP, germanium, transistor. 1.2 Physical , MIL-S-1950P. 3.3 Design, construction, and physical dimensions. Transistor shall be of the design , MIL-S-Ã95Ã"Ã" may be omitted from the body of the transistor at the option of the manufacturer: (a , the seating piane of the transistor max dia ieads shaii be within ,007 (.18 mm) of their true iocotion
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OC 74 germanium transistor OC 140 germanium transistor UJ33 2N396A kc 2026 MEL-S-19500/64D MIL-S-19500/64C MIL-S-19500/64D

OC 74 germanium transistor

Abstract: 2N1500 SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, SWITCHING TYPE 2N1500 This specification is , specification covers the detail requirements for a high-speed switching, PNP, germanium transistor. 1.2 , , construction, and physical dimensions. The transistor shall be of the design, construction, and physical , omitted from the body of the transistor at the option of the manufacturer: (a) Country of origin. (b , in a gaging plane .054+.001, -.000 (1.37+.03,%Q0 mm) below the seating plane of the transistor max
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NEW JERSEY SEMICONDUCTOR uz MIL-S-19500/125C

NSL5027

Abstract: transistor LM340 00741316 *Solid tantalum *Germanium diode (using a PNP germanium transistor with the collector shorted , less than 5.0A, the R2/R1 ratio can be set lower than 4:1. Therefore, a less expensive PNP transistor , transistor with a lower power PNP device to replace the single, higher cost, power PNP shown in Figure 6 , Circuit Current Limit The 15V regulator circuit of Figure 6 includes an external boost transistor to , components. The extension of these safety features to the external pass transistor Q1 is based on a current
National Semiconductor
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LM340 NSL5027 transistor LM340 LM340 voltage regulator AN-103 national 12V 10A voltage regulators LM340-XX AN-103

IC 7413

Abstract: NSL5027 equivalent tantalum Germanium diode (using a PNP germanium transistor with the collector shorted to the emitter , uses a relatively inexpensive NPN pass transistor with a lower power PNP device to replace the single , regulator circuit of Figure 6 includes an external boost transistor to increase output current capability , of these safety features to the external pass transistor Q1 is based on a current sharing scheme , in the pass transistor or 10A total TL H 7413 ­ 8 FIGURE 8 Continuous Short Circuit Current vs
National Semiconductor
Original
IC 7413 NSL5027 equivalent Z340 TTL 74137 LM324 DIL transistor LM320K-15

transistor K52

Abstract: germanium transistor pnp XCIOI AUDIO OUTPUT TRANSISTOR Germanium PNP Junction Type E D I S W A N MAZDA TENTATIVE GENERAL The XCIOI is a germanium pnp junction type transistor suitable for use in Audio Output stages. The element , TRANSISTOR Germanium PNP Junction Type _TENTATIVE_ CHARACTERISTICS (at 25°C.). Small Signal Values (average , I S W A N MAZDA XCIOI AUDIO OUTPUT TRANSISTOR Germanium PNP Junction Type TENTATIVE TYPICAL , OUTPUT TRANSISTOR Germanium PNP Junction Type TENTATIVE Mean Total Base Current at Maximum Power Output
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transistor K52 mullard germanium GERMANIUM SMALL SIGNAL PNP TRANSISTORS mullard 160 germanium transistor GERMANIUM SMALL SIGNAL TRANSISTORS

TRANSISTOR 3F z

Abstract: OC 44 germanium transistor E D I S W A N MAZDA XAIOI I.F. TRANSISTOR Germanium PNP Junction Type _TENTATIVE GENERAL The XAIOI , . TRANSISTOR Germanium PNP Junction Type TENTATIVE DIMENSIONS AND CONNECTIONS 0.295" Max. 0.285"Min . HH 1 1.2 , XAIOI I.F. TRANSISTOR Germanium PNP Junction Type TENTATIVE CHARACTERISTIC CURVES Common Emitter Circuit , . TRANSISTOR Germanium PNP Junction Type TENTATIVE CHARACTERISTIC CURVES Common Emitter Circuit Ambient , SWAN LIMITED MAZDA XAIOI I.F. TRANSISTOR Germanium PNP Junction Type TENTATIVE CHARACTERISTIC CURVES
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TRANSISTOR 3F z OC 44 germanium transistor crt 1700 mazda 3 Germanium Amplifier Germanium itt

germanium transistor pnp

Abstract: Germanium E D I S W A N \tr MAZDA XAI02 V R.F. TRANSISTOR Germanium PNP Junction Type _TENTATIVE_ GENERAL The , A N \tr MAZDA XAI02 V R.F. TRANSISTOR Germanium PNP Junction Type TENTATIVE Static Current , XAI02 R.F. TRANSISTOR Germanium PNP Junction Type TENTATIVE DIMENSIONS AND CONNECTIONS â  0.5 Â , N \tr MAZDA XAI02 V R.F. TRANSISTOR Germanium PNP Junction Type TENTATIVE TYPICAL CIRCUIT , MAZDA XAI02 I.F. TRANSISTOR Germanium PNP Junction Type TENTATIVE CHARACTERISTIC CURVES Common Emitter
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Germanium germanium pnp germanium pnp transistor siemens crt EDISON transistor germanium

ci 740

Abstract: ci740 E D I S W A N MAZDA XBI03 L.F. TRANSISTOR Germanium PNP Junction Type _TENTATIVE GENERAL The XBI03 is a germanium pnp junction type transistor suitable for use as an L.F. Amplifier The element of the , SWAN LIMITED E D I S W A N MAZDA XBI03 L.F. TRANSISTOR Germanium PNP Junction Type TENTATIVE DIMENSIONS , SIEMENS EDISON SWAN LIMITED MAZDA XBI03 L.F. TRANSISTOR Germanium PNP Junction Type TENTATIVE , . TRANSISTOR Germanium PNP Junction Type TENTATIVE CHARACTERISTIC CURVES Common Emitter Circuit Ambient
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ci 740 ci740 Lf transistor germanium Power Transistor germanium ac transistor lf

pnp germanium transistor

Abstract: Germanium Transistors germanium transistors Reverse leakage from 0.1mA to 9mA PNP and NPN transistors FETâ'™s NPN or PNP , METER SCALES GOOD NPN or PNP Ge or Si , Base or Gate for good transistor or FETâ'™s Readable from 0.1µA to 9mA for Ice leakage, calibrated for silicon and germanium power and signal transistor leakage limits Does not apply NPN or PNP Ge or Si , Base or Gate for good transistor or FETâ'™s , 520C Specifications Model 520C Industrial Transistor Tester IN-CIRCUIT TEST The B+K
BK Precision
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Germanium Transistors germanium transistors PNP
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