NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: B772 B772 TRANSISTOR (PNP) TO-92 FEATURES Power dissipation 1. EMITTER PCM: 625 mW (Tamb=25) 2. COLLECTOR Collector current ICM: -3 A Collector-base voltage -40 V V(BR)CBO: Operating and storage junction temperature range 3. BASE 1 2 3 TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol unless otherwise specified) Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=-100uA ,IE=0 -40 ... | Original |
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B772 datasheet B772 equivalent b772 pnp pnp b772 TRANSISTOR br b772 b772 transistor B772 b772 p TRANSISTOR b772 br b772 datasheet abstract |
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| Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252 Plastic-Encapsulate Transistors TO-252 B772 TRANSISTOR (PNP) FEATURES 1. BASE ·Low speed switching 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base , 200-400 Typical characteristics B772 ... | Original |
2 pages, |
B772 equivalent B772 datasheet b772 pnp B772 TRANSISTOR TRANSISTOR br b772 B772 TRANSISTOR b772 br b772 B772 TO-252 datasheet abstract |
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| Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors B772 TRANSISTOR (PNP) TO-126 FEATURES ·Low speed switching 1. EMITTER 2.COLLECTOR 3.BASE 123 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base , 60-120 100-200 160-320 200-400 Typical characteristics B772 ... | Original |
2 pages, |
transistors b772 b772 transistor B772 PNP B772 equivalent B772 datasheet TRANSISTOR br b772 B772 TRANSISTOR b772 br b772 datasheet abstract |
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| Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate Transistors TO-251 B772 TRANSISTOR (PNP) FEATURES 1. EMITTER ·Low speed switching 2. COLLECTOR 3 BASE MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value 123 Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base , 200-400 Typical characteristics B772 ... | Original |
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B772 PNP B772 equivalent TRANSISTOR b772 TO-251 B772 B772 br b772 datasheet abstract |
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| Abstract: B772 0. 5 1б â"". 03 0 5. 50б â"". 10 0 5б у 14. 70 TRANSISTOR (PNP) FEATURES 5б у 5б у 7. 70 0. 80б â"". 0 5 0 0. 6 0б â"". 0 5 0 1. Power dissipation BASE 2. 3 0б â"". 05 0 2. 3 0б â"". 0 5 0 1 . 20 0. 51 б â"". 03 0 123 2. W(Tamb=25) COLLECTOR 6. 50б â"". 15 0 2. 30б â"". 10 0 5. 30б â"". 10 0 0. 51б â"". 05 0 5б у EMITTER 0 5. , 0 0 0. 75б â"". 10 B772 6. 5 0б â"". 10 0 TO-251 TO-252-2 TJ, Tstg: -55 to +150 ... | Original |
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TRANSISTOR br b772 B772 TO-252 B772 equivalent pnp b772 b772 transistor b772 pnp TRANSISTOR b772 br b772 b772 datasheet abstract |
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| Abstract: B772 PNP Type Elektronische Bauelemente Plastic Encapsulate Transistors RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-126 Features 2.7�2 7.6�2 * Low speed switching 1.3�2 4.0�1 10.8�2 O 3.1� 0.1 MAXIMUM RATINGS* TA=25 C unless otherwise noted o Symbol 2 3 2.2�1 Value Units VCBO Collector-Base Voltage -40 V , / 01-Jun-2004 Rev. B Any changing of specification will not be informed individual Page 1 of 2 B772 PNP ... | Original |
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pnp b772 B772 E H B772 B772 equivalent br b772 B772 SPECIFICATION B772 b772 p B772 PNP datasheet abstract |
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| Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors B772 TRANSISTOR (PNP) TO-92 FEATURES Power dissipation 1. EMITTER PCM: 625 mW (Tamb=25) 2. COLLECTOR Collector current -3 A ICM: Collector-base voltage -40 V V(BR)CBO: Operating and storage junction temperature range 3. BASE 1 2 3 TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol unless otherwise specified) Test conditions MIN TYP ... | Original |
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transistors b772 b772 transistor b772 pnp pnp b772 B772 TRANSISTOR b772 br b772 b772 p datasheet abstract |
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| Abstract: PNP TRANSISTOR B772 3.0A AF OUTPUT AMPLIFIER FOR DC-DC CONVERTER FOR CAMERA MOTOR DRIVER MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICSTa=25 PARAMETERS SYMBOL Collector-Emitter Breakdown Voltage BVceo Collector-Base Breakdown Voltage BVcbo Emitter-Base Breakdown Voltage BVebo Collector-Base Leakage Icbo Emitter-Base Leakage Iebo Collector-Emitter Saturation Voltage Vcesat DC Current Gain Hfe1 Collector Current Ic Peak Collector Current Icp Current Gain Bandwidth fT Output ... | Original |
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b772 transistor B772 datasheet pnp b772 B772 PNP B772 B772 equivalent TRANSISTOR b772 datasheet abstract |
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| Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors B772 TRANSISTOR (PNP) TO-126 FEATURES Power dissipation 1. EMITTER 1.25 PCM: W (Tamb=25) 2. COLLECTOR Collector current -3 A ICM: Collector-base voltage -40 V V(BR)CBO: Operating and storage junction temperature range 3. BASE 123 TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol unless otherwise specified) Test conditions MIN TYP MAX ... | Original |
1 pages, |
b772 pnp b772 transistors b772 TRANSISTOR b772 pnp b772 b772 transistor br b772 datasheet abstract |
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| Abstract: TO-126 Plastic-Encapsulate Transistors 1 2 3 TO-126 1.EMITTER 2.COLLECTOR 3.BASE B772 TRANSISTOR(PNP) U RES Power dissipation Pcm: 1.25W (Tamb=25°C) Collector current ICM: -3 A Collector-base voltage V(br)cbo: -40 V Operating and storage junction temperature range Tj,Tstg: -55°C to + 150°C El L EOI ICS (Tamb = 25°C unless otherwise specified) n A Parameter • Symbol • Test , Hfeid Rank R 0 Y GR Range 60-120 100-200 160-320 200-400 Typical Characteristics B772 i §10 TOTAL ... | OCR Scan |
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TRANSISTOR br b772 B772 TRANSISTOR 8772 transistor 1.25W transistor 8772 transistor b772 H B772 b772 q CA 8772 br b772 BR 8772 B772 B772 031 datasheet abstract |
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