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Part Manufacturer Description Datasheet BUY
J2014001L402 GE Critical Power GP100, 3&934;-480, RS485 communications, controller slot, LAN, RJ45 terminations, configured for slot 3 visit GE Critical Power
J2014001L601 GE Critical Power Compact Power Line Shelves, GP100, 3Φ-480, dual, redundant, I2C shelf configured for 48Vdc output, configured for slot 1, hardware and shelf interconnect included visit GE Critical Power
J2014001L601A GE Critical Power Compact Power Line Shelves, GP100, 3Φ-480, dual, redundant, I2C shelf configured for 54Vdc output, configured for slot 1, hardware and shelf interconnect included visit GE Critical Power
J2014001L401 GE Critical Power GP100, 3&934;-480, RS485 communications, add-on stand-alone shelf, configured for slot 3, hardware and shelf interconnect included visit GE Critical Power
PIM400K6Z GE Critical Power PIM400 Series; ATCA Board Power Input Module, -36 to -75 Vdc; 400W/10A, I2C Digital Interface & Short pins (3.68mm) visit GE Critical Power
AXA016A0X3-SR12 GE Critical Power 12V Austin SuperLynxTM 16A: Non-Isolated DC-DC Power Module, 10Vdc –14Vdc input; 0.75Vdc to 5.5Vdc output; 16A Output Current, 100Ω Resistor between Sense and Output Pins visit GE Critical Power

pin configuration transistor 2n3055

Catalog Datasheet MFG & Type PDF Document Tags

pin configuration transistor 2n3055

Abstract: 2N3055 MJ2955 IL 2N3055 MJ2955 NPN POWER TRANSISTOR PNP POWER TRANSISTOR 2N3055 MJ2955 General Purpose Switching and Amplifier Applications DIM A B C D E F G H J K L M MIN - MAX 39,37 22,22 8,50 1.09 1,77 30,4 11,18 5,72 17,15 12,25 26,67 4,19 6.35 0,96 29,90 10,69 5.20 16,64 11,15 - PIN CONFIGURATION 1. BASE 2. EMITTER 3. COLLECTOR 3.84 ABSOLUTE MAXIMUM RATINGS Collector-base voltage (open , voltage (R be = 100Q) VcBO v CEO VCER max. max. max. 100 V 60 V 70 V 5-1 2N3055 MJ2955
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pin configuration transistor 2n3055 2N3055 MJ2955 power transistor 2n3055 Transistor 2n3055 pin configuration 2N3055 transistor pin configuration transistor mj2955

pin configuration transistor 2n3055

Abstract: pin out TRANSISTOR 2n3055 2N3055 NPN MJ2955 PNP SILICON PLANAR POWER TRANSISTOR TO-3 Metal Can Package ELECTRICAL , 1.09 1.77 30.40 11.18 5.72 17.15 12.25 26.67 4.19 3 1 2 PIN CONFIGURATION 1. BASE , 2N3055 NPN MJ2955 PNP SILICON PLANAR POWER TRANSISTORS TO-3 Metal Can Package General Purpose , Width , kgs Page 3 of 4 2N3055 NPN MJ2955 PNP Notes TO-3 Metal Can Package Disclaimer The
Continental Device India
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pin out TRANSISTOR 2n3055 OF transistor 2n3055 to-3 package CDIL 2N3055 Transistor 2n3055 IC 2n3055 pin Mj2955 power transistor C-120 MJ2955R 291201E

pin configuration transistor 2n3055

Abstract: pin out TRANSISTOR 2n3055 2N3055 NPN MJ2955 PNP SILICON PLANAR POWER TRANSISTOR TO-3 Metal Can Package ELECTRICAL , 1.09 1.77 30.40 11.18 5.72 17.15 12.25 26.67 4.19 3 1 2 PIN CONFIGURATION 1. BASE , Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company 2N3055 NPN , Width , kgs Page 3 of 4 2N3055 NPN MJ2955 PNP Notes TO-3 Metal Can Package Disclaimer The
Continental Device India
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MJ2955 TRANSISTOR pnp transistor 2N3055 hfe 2n3055 general purpose 2n3055 transistors transistor 2n3055 h parameters J 2N3055

pin configuration transistor mj2955

Abstract: pin configuration transistor 2n3055 Transys Electronics L I M I T E D 2N3055 NPN MJ2955 PNP SILICON PLANAR POWER TRANSISTORS , 20 5 5.0 0.7 5.0 1.1 3.0 1.5 70 UNITS V V mA mA mA V V 2N3055 NPN MJ2955 PNP SILICON PLANAR POWER TRANSISTOR TO-3 Metal Can Package ELECTRICAL CHARACTERISTICS (TC , 120 KHz 2N3055 NPN MJ2955 PNP TO-3 Metal Can Package TO-3 Metal Can Package A B K E , 39.37 22.22 8.50 1.09 1.77 30.40 11.18 5.72 17.15 12.25 26.67 4.19 3 1 2 PIN
Transys Electronics
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NPN Transistor 2N3055 2n3055 npn 2N3055 transistor equivalent
Abstract: 1.09 1.77 30.40 11.18 5.72 17.15 12.25 26.67 4.19 M 3 2 1 PIN CONFIGURATION 1. BASE , 2N3055 NPN MJ2955 PNP SILICON PLANAR POWER TRANSISTORS TO-3 Metal Can Package General Purpose , 20 5 5.0 0.7 5.0 1.1 3.0 1.5 70 UNITS V V mA mA mA V V Page 1 of 4 2N3055 NPN MJ2955 PNP SILICON PLANAR POWER TRANSISTOR TO-3 Metal Can Package ELECTRICAL , Width Continental Device India
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Abstract: 26.67 4.19 3 1 2 PIN CONFIGURATION 1. BASE 2. EMITTER 3. COLLECTOR Packing Detail , Certified Manufacturer 2N3055 NPN MJ2955 PNP SILICON PLANAR POWER TRANSISTORS TO-3 Metal Can , UNITS V V mA mA mA V V Page 1 of 4 2N3055 NPN MJ2955 PNP SILICON PLANAR POWER TRANSISTOR TO-3 Metal Can Package ELECTRICAL CHARACTERISTICS (TC=25ºC unless specified otherwise , India Limited Data Sheet Page 2 of 4 2N3055 NPN MJ2955 PNP TO-3 Metal Can Package TO Continental Device India
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icl8083

Abstract: ICL8063 equivalent 70 volts. PIN CONFIGURATION -vreq out [t -Rbias [7 N.C. [3 v- G FREQ. COMP. CAPAC. ¡7 P BASE DR , ONfinüm JCL8063 Power Transistor Driver-Amplifier FEATURES: â'¢ Converts ±12V Outputs from , current in power amp configuration while delivering ±2 Arnps output current â'¢ Has built in  , DESCRIPTION The ICL8063 is a unique monolithic power transistor driver and amplifier that allows construction , (typically ±11V) from an op amp and boosts them to ±30V to drive power transistors, (e.g. 2N3055 (NPN) and
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icl8083 ICL8063 equivalent 2n3055 Equivalent ICL8063CPE 2N3055 equivalent transistor NUMBER 2N3055 power amplifier circuit 2N3789 400V2 ICH8510/8520/8530

2N3055 transistor equivalent to220

Abstract: 12v 10A car battery charger wiring diagram drives the base of a npn transistor (2N3055). This configuration can deliver up to 10A . To fix these , , and so the output current . The inhibit function, pin 3, allows to turn off the bipolar transistor , of a multi-Amps regulators making use of an N-channel lateral D-Mos transistor, versus the most , Darlington transistor as the pass linear power element, driven by a pnp transistor (see Fig. 2). It was an , NPN transistor, driven directly by a PNP type. Example of this design solution is the L2600 family
STMicroelectronics
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2N3055 transistor equivalent to220 12v 10A car battery charger wiring diagram 2n3055 application note 2N3055 equivalent mosfet 2N3055 pin out connections smd transistor 2N3055 AN932 L4955

2N3055 equivalent transistor NUMBER

Abstract: Y2w TRANSISTOR ig npn base drive output ì3 current comp. capac. t) + rshortckt. prot. Figure 2: Pin Configuration , 3875081 G E SOLID STATE 01E 10753 ICL8063 Power Transistor Driver/Amplifier general description The ICL8063 is a unique monolithic power transistor driver and amplifier that allows construction , ±11V) from an op amp and boosts them to ± 30V to drive power transistors, (e.g. 2N3055 (NPN) and 2N3789 (PNP , the order of about 5 milliamperes. A power transistor with a ±35 volt supply, a collector current of
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Y2w TRANSISTOR 2n3055 motor control circuits schematic diagram audio power amplifier using 2n3055 2N3055 diagram with power supply transistor Y2W ICL8063 circuit diagram T-19-23 ICHB510/8520/8530

smd transistor 2N3055

Abstract: TRANSISTOR 2n3055 a npn transistor (2N3055). This configuration can deliver up to 10A . To fix these concepts let us , the output current . The inhibit function, pin 3, allows to turn off the bipolar transistor. POWER , of a multi-Amps regulators making use of an N-channel lateral D-Mos transistor, versus the most , Darlington transistor as the pass linear power element, driven by a pnp transistor (see Fig. 2). It was an , NPN transistor, driven directly by a PNP type. Example of this design solution is the L2600 family
STMicroelectronics
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2n3055 use in battery charger 2N3055 CHARGER schematic diagram 2n3055 voltage regulator 12v car battery charger wiring diagram equivalent transistor 2n3055 1004CL

12v 10A car battery charger wiring diagram

Abstract: 2N3055 CHARGER schematic diagram L4955 drives the base of a npn transistor (2N3055). This configuration can deliver up to 10A . This , , and so the output current . The inhibit function, pin 3, allows to turn off the bipolar transistor , example of a multi-Amps regulators making use of an N-channel lateral D-Mos transistor, versus the most , Darlington transistor as the pass linear power element, driven by a pnp transistor (see Fig. 2). It was an , NPN transistor, driven directly by a PNP type. Example of this design solution is the L2600 family
STMicroelectronics
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NPN Transistor 2N3055 darlington 2N3055 12V 2N3055 TO-220 smd 2n3055 2n3055 smd 2N3055 schematic diagram D97IN610A

texas 2n3055

Abstract: BU108 Area Motorola Bipolar Power Transistor Device Data 3­3 2N3055 MJ2955 NPN 2N3055 500 300 200 , Operating Area 2N3055 * PNP MJ2955* *Motorola Preferred Device NPN ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ , future use and best overall value. 3­2 Motorola Bipolar Power Transistor Device Data , Registration. (2N3055) (1) Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%. 2N3055 MJ2955 2N3055, MJ2955 , 500 µs 250 µs dc 1 ms There are two limitations on the power handling ability of a transistor
Motorola
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texas 2n3055 BU108 2N5655 equivalent 2n3055 replacement BU100 BDX54 204AA MJ15012 MJE15030 2N6339 2N6341 2N6497

MJ3001 equivalent

Abstract: Motorola transistors MJE3055 TO 127 Transistor Device Data CASE 221D Isolated TO­220 Type UL Recognized File #E69369 1 2 3 STYLE 1: PIN 1 , devices. Motorola Bipolar Power Transistor Device Data Selector Guide 2­3 STYLE 1: PIN 1. 2. 3 , for future use and best overall value. REV 3 Motorola Bipolar Power Transistor Device Data , Cycle 2%. 3­848 Motorola Bipolar Power Transistor Device Data MJW16010A TYPICAL STATIC , °C Figure 5. Capacitance Motorola Bipolar Power Transistor Device Data 3­849 MJW16010A TYPICAL
Motorola
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MJ3001 equivalent Motorola transistors MJE3055 TO 127 BD907 equivalent Drive IC 2SC3346 mje340 equivalent transistor equivalent book 2sc2238 MJ15011 MJ15016 BU208A MJE16106 MJ16012 MJ10009

2N3055 series voltage regulator

Abstract: 2n3055 voltage regulator operation is possible with the addition of a one NPN pass transistor per regulator. External resistors , , and thermal shutdown is shown in Figure 4. The field effect transistor Q28, is initially ON allowing , fully establish the zener voltage, transistor Q29, Q30 and Q31 turn on and bias up all current sources , transistor Q11, the output drive current is switched away from the output devices Q4 and Q5. This externally , transistor where the current limit could be set to protect that transistor from excessive power dissipation
National Semiconductor
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LM125 2N3055 series voltage regulator circuit diagram of 2N3055 series voltage regulator 2n3055 regulator 10a 2N3055 power supply circuit terminals of 2n3055 positive negative voltage regulator variable

MJ802 EQUIVALENT

Abstract: 2N3055 equivalent transistor NUMBER mounting and heat sinking configuration used. Selector Guide 2­16 Motorola Bipolar Power Transistor , (sus) - 400 V Collector­Emitter Breakdown - V(BR)CES - 650 V State­of­Art Bipolar Power Transistor , for future use and best overall value. REV 1 Motorola Bipolar Power Transistor Device Data , ) Pulse Test: Pulse Width = 300 µs, Duty Cycle 2%. 3­530 Motorola Bipolar Power Transistor Device , Figure 5. Capacitance Motorola Bipolar Power Transistor Device Data 3­531 MJ16110 MJW16110
Motorola
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MJ802 EQUIVALENT MJ4502 EQUIVALENT bd131 equivalent bd139 equivalent MJ15025* equivalent ST T8 3580 TIP101 TIP102 TIP106 TIP107 TIP31C TIP32C

bd139 equivalent transistor

Abstract: transistor 2SA1046 mounting and heat sinking configuration used. Selector Guide 2­16 Motorola Bipolar Power Transistor , MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Silicon Power Transistor Switchmode Bridge Series , (sus) - 400 V Collector­Emitter Breakdown - V(BR)CES - 650 V State­of­Art Bipolar Power Transistor , " design. REV 1 3­696 Motorola Bipolar Power Transistor Device Data , 300 µs, Duty Cycle 2.0%. Motorola Bipolar Power Transistor Device Data 3­697 MJE16106
Motorola
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bd139 equivalent transistor transistor 2SA1046 motorola transistor cross reference transistor equivalent book 2SC2073 transistor 40251 TRANSISTOR REPLACEMENT GUIDE TIP120 TIP121 TIP122 TIP125 TIP126 TIP127

TRANSISTOR REPLACEMENT GUIDE

Abstract: bd139 equivalent mounting and heat sinking configuration used. Selector Guide 2­16 Motorola Bipolar Power Transistor , MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Silicon Power Transistor 1 kV SWITCHMODE Series , value. REV 3 3­830 Motorola Bipolar Power Transistor Device Data , %. Motorola Bipolar Power Transistor Device Data 3­831 MJH16006A TYPICAL STATIC CHARACTERISTICS VCE , . Capacitance 3­832 Motorola Bipolar Power Transistor Device Data MJH16006A TYPICAL INDUCTIVE
Motorola
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2SC495 mje13007 equivalent 2sd880 equivalent BDT65C equivalent BDX53 equivalent 2N3773 equivalent TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A

2SC123

Abstract: sec tip41c . Motorola Bipolar Power Transistor Device Data Selector Guide 2­3 STYLE 1: PIN 1. 2. 3. 4. BASE , Test: Pulse Width = 5.0 ms, Duty Cycle 10%. REV 2 Motorola Bipolar Power Transistor Device , ) Pulse Test: Pulse Width = 300 µs, Duty Cycle 2.0%. 3­856 Motorola Bipolar Power Transistor Device , Bipolar Power Transistor Device Data 3­857 MJW16206 SAFE OPERATING AREA INFORMATION 30 20 IC , limitations on the power handling ability of a transistor: average junction temperature and second breakdown
Motorola
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2SC123 sec tip41c sec tip42c TRANSISTOR tip41c pin out image TRANSISTOR BC 327 MJ11032 equivalent MJF16206 TIP75B TIP75C 2N6488 2N6490 2N6491

2SA1046

Abstract: BUL1 Transistor The BUH51 has an application specific state­of­art die designed for use in 50 Watts Halogen electronic transformers. This power transistor is specifically designed to sustain the large inrush current , Parametric Distributions BUH51 POWER TRANSISTOR 3 AMPERES 800 VOLTS 50 WATTS , Transistor Device Data ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ , Motorola Bipolar Power Transistor Device Data 3­271 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ
Motorola
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2SA1046 BUL1 BU326 BDV64 transistor bc 851 NPN POWER DARLINGTON TRANSISTORS high voltage high ICM TO-247 MJE13005 TIPL752 TIPL752A TIPL753 TIPL753A TIPL755

MJ3001 equivalent

Abstract: MJ3000 equivalent MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ2955 (See 2N3055) MJ2955A (See 2N3055A) Medium-Power , overall value. REV 7 Motorola Bipolar Power Transistor Device Data 3­425 , limitations on the power handling ability of a transistor: junction temperature and secondary breakdown. Safe operating area curves indicate IC ­ VCE limits of the transistor that must be observed for reliable operation; e.g., the transistor must not be subjected to greater dissipation 3­426 Figure 5. DC Safe
Motorola
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MJ2501 MJ3000 equivalent 2sc1096 equivalent MJ3000 circuit 2sb558 equivalent MJ2955 2n3055 200 watts amplifier MJ2500 MJ3000 MJ3001 TIPL755A TIPL760
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