NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: for LED driver applications, using the LinkSwitch-II product LNK606PG LNK606PG in a flyback configuration , capacitors and inductors. This configuration, along with Power Integrations' transformer E-ShieldTM , LED should have an open-circuit failure. R8 5.1 L1 2200 H D1 1N4007 R1 10 k D2 1N4007 T1 EE16 1 C3 1 nF 1 kV 7.6 V, 700 mA 9 R3 470 k D7 SB260 SB260 C7 680 F 16 V , 10 F 400 V C1 4.7 F 400 V 4 85 - 265 VAC 3 R2 10 k D3 1N4007 D4 1N4007 ... | Original |
2 pages, |
1N4007 1N4007GP EE16 4 3 Halogen transformer IC 1N4007 LL4148 SB260 led driver using the diode 1N4007 EN55015 driver switching transformer winding EE16 EN55015 lnk606 pin configuration diode 1N4007 DI-184 DI-184 abstract |
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| Abstract: configuration has been used on the input stage, a diode and resistor has been added at the standard Passive Valley Fill configuration to reduce THD. AN-1072 AN-1072 1 Fig. 1: Bus voltage shape (in yellow) and , high PF a Passive Valley Fill configuration has been used on the input stage, a diode and resistor has , current is intrinsic in a Passive Valley Fill Configuration because of the bus shape. The crest factor , Valley Fill configuration using a 1K resistor to reduce the harmonics. 1) Total Harmonic distortion ... | Original |
5 pages, |
philips IR2520D crest factor Application note IR2520D Diode 1N4007 transistor keltron 10nF Capacitor 1000V IR2520D KELTRON ceramic disc capacitor KELTRON cfl circuit philips 14w cfl Philips Capacitor 1uf 1000v x2 1N4007 diode philips make datasheet abstract |
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| Abstract: capacitors were calculated as follows: Pin 18 2.7k GND Figure 4: Current Input Configuration C , supply + 3 Phase 4 Wire configuration + + On-board current transformers Can be used with , J3 Open VDD Pin 6 Fout Pin 8 3 Closed SA2005F SA2005F (U1) 2 Closed Signal Name 1 Closed VSS Pin 14 sames N PH2 PH3 PH1 SK1 J10 is used to take , is available on the Fout pin. Figure 3 also shows the default jumper settings. The PM2005F PM2005F ... | Original |
12 pages, |
SA9105F SA2005F S10. 275 SA2005 ic 4n35 data sheet TZ-76 10k resistor 2 watt datasheet 22k resistor 1/4 watt datasheet 3 watt 63v zener diode capacitor 1u 63V Diode Datasheet 1N4007 ct3 "current sensor" energy meter circuit diagram 3 phase SA2005F abstract |
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| Abstract: : halogen free and RoHS compliant LNK605DG LNK605DG (U1) in a flyback configuration. Typical applications include , differential-mode EMI. This configuration, along with Power Integrations' transformer E-Shield` technology, enables , current. Device U1 is completely self-powered from the BYPASS (BP) pin and decoupling capacitor C4. , LinkSwitch-II product R8 5.1 L1 1000 H T1 EE16 1 C3 1 nF 1 kV D1 1N4007 D2 1N4007 R1 10 k D3 1N4007 D4 1N4007 D7 SB1100 SB1100 C7 330 F 16 V R9 3k 4 C2 10 F 400 V ... | Original |
2 pages, |
SB1100 1N4007GP diode D7 flyback transformer pin configuration led driver using the diode 1N4007 1N4007 PI voltage CONTROLLER circuit LNK605DG DATASHEET PI CONTROLLER circuit DI-185 EE16 lnk605 EN55015 DI-185 abstract |
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| Abstract: configuration to deliver a constant current of 130 mA at a voltage of 70 VDC. The supply provides an ideal , flow. This polarity reversal forward biases the freewheeling diode D5, which allows current to flow and , and load conditions. The feedback (FB) pin of U1 is sampled at the beginning of each cycle. If current in excess of 49 A is delivered into the FB pin by the transistor of optocoupler U2, the current , D1 1N4007 L D2 1N4007 C4 47 F 100 V D5 BYV26B BYV26B F1 1A L1 5 mH 108 - 132 VAC N ... | Original |
2 pages, |
UF4005 1n4007 M7 1N5259B buck converter topology BYV26B DI 172 DI-172 EE19 transformer 1N4007 EE19 type core EE19 type inductor EN55022B LinkSwitch-TN PC40EE DI-172 abstract |
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| Abstract: nonisolated buck converter configuration. Diodes D3, D4, D5, and D6 rectify the AC input; then bulk storage , attenuate differentialmode EMI noise. This configuration enables easy compliance to EMI standard EN55015 EN55015 , output: It provides current multiplication L1 470 H D3 1N4007 4 C4 4.7 F 400 V 85 - 265 VAC 1 8 5 C5 4.7 F 400 V LinkSwitch-II U1 LNK605DG LNK605DG D5 1N4007 D R4 3k 7 6 RF1 8.2 2W D6 1N4007 C1 330 F 16 V D1 SB1100 SB1100 D4 1N4007 T1 R1 49.9 k ... | Original |
2 pages, |
1N4007 SB1100 PI-5141-090908 PC44 LNK605DG DATASHEET transformer ee10 lnk605 led driver using the diode 1N4007 ee10 transformer EN55015 EE10 horizontal bobbin EE10 bobbin LNK605DG DI-186 DI-186 DI-186 abstract |
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| Abstract: Valley Fill configuration has been used on the input stage, a diode and resistor has been added at the , Power Factor < III. High Power Factor Configuration .3 IV. Low , Valley Fill Configuration .3 VI. Boosted , complete high- and low-side 600V half-bridge driver as well as an integrated bootstrap diode. One of the ... | Original |
14 pages, |
1N4148 1000v 1uf capacitor Diode 1N4007 transistor pin configuration diode 1N4007 electronic ballast dc to ac converter ELECTRONIC BALLAST WITHOUT ic IR2520D application advantages of 1N4007 irfu420 14w cfl circuit 10uF 450v IR2520 AN-1073 AN-1073 abstract |
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| Abstract: (N=DIP) P: Y=Green package M: Manufacture flow code Figure 4. Top Mark Pin Configuration , 100k C9 Open R4 R 10 C10 CC 1nF R5 R 2.2 D1 Diode 1N4007 R6 R 47 D2 Diode 1N4007 R7 R 270 D3 Diode 1N4007 R8 R 0 D4 Diode 1N4007 R9 R , R6 R 47 C9 Open R7 R 270 C10 CC 1nF R8 R 0 D1 Diode 1N4007 R9 R 2k D2 Diode 1N4007 R10 R 560 D3 Diode 1N4007 R11 R 20k D4 Diode ... | Original |
14 pages, |
Transformer EE-16 TL431 JESD22 A114 FSEZ2016NY advantages of 1N4007 C101 CC 1nF 7pin smps IC 1N4007 smps diode IC PC817 smps with tl431 and pc817 EE-16 hysteresis CHARACTERISTICS DIODE 1N4007 FSEZ2016 FSEZ2016 FSEZ2016 abstract |
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| Abstract: : Manufacture flow code Figure 4. Top Mark Pin Configuration Figure 5. Pin Assignments Pin , R 2.2 D1 Diode 1N4007 R6 R 47 D2 Diode 1N4007 R7 R 270 D3 Diode 1N4007 R8 R 0 D4 Diode 1N4007 R9 R 2k D5 Diode FR107 FR107 T1 Transformer EE-16 EE-16 D6 , 270 C10 CC 1nF R8 R 0 D1 Diode 1N4007 R9 R 2k D2 Diode 1N4007 R10 R 560 D3 Diode 1N4007 R11 R 20k D4 Diode 1N4007 R12 FSEZ2016 FSEZ2016 - Low-Power ... | Original |
14 pages, |
TL431 1N4007 smps diode 1N4007 ZENER DIODE A114 advantages of 1N4007 C101 diode 1N4007 specifications dip smps ic pc817 datasheet DIP7 SMPS ezswitch pc817 fairchild marking code diode R12 L3 marking FSEZ2016 FSEZ2016 FSEZ2016 abstract |
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| Abstract: Pin Configuration Figure 5. Pin Assignments Pin Definitions Pin # Name 1 SOURCE , 2.2 D1 Diode 1N4007 R6 R 47 D2 Diode 1N4007 R7 R 270 D3 Diode 1N4007 R8 R 0 D4 Diode 1N4007 R9 R 2k D5 Diode FR107 FR107 T1 Transformer EE-16 EE-16 D6 , 270 C10 CC 1nF R8 R 0 D1 Diode 1N4007 R9 R 2k D2 Diode 1N4007 R10 R 560 D3 Diode 1N4007 R11 R 20k D4 Diode 1N4007 R12 FSEZ2016 FSEZ2016 - Low-Power ... | Original |
14 pages, |
1N4007 smps diode 1N4007 operating frequency DIP7 SMPS FSEZ2016NY TL431 1N4007 definitions IC 1N4007 DATA SHEET JESD22 DIODE FR107 tl431 and pc817 pc817 fairchild MARKING CODE R7 DIODE Diode Datasheet 1N4007 FSEZ2016 FSEZ2016 FSEZ2016 abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
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| .9k C4 100nF R1 10k C3 10nF D1 1N4007 C2 22uF 400V L1 470uH D3 BYT01 BYT01 BYT01 BYT01 4 100nF R1 10k C3 10nF D1 1N4007 C1 22uF 400V L1 470uH D3 BYT01-400V BYT01-400V BYT01-400V BYT01-400V C the part number 1N4007. The energy stored in the bulk capacitor during the conduction time of the F R2 56k C3 2.2nF D1 1N4007 C2 22uF 400V L1 470uH D3 BYT01-400V BYT01-400V BYT01-400V BYT01-400V C5 33u DRAIN VDD - + U1 VIPer20 R3 3.9k C4 100nF 10k R2 C3 10nF D1 1N4007 C1 22 www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/7520.htm |
STMicroelectronics | 19/01/2001 | 32.28 Kb | HTM | 7520.htm |
| zener D2, D3 BYW100-100 BYW100-100 BYW100-100 BYW100-100 D4,D5,D6,D7 1N4007 D8 1N4148 1N4148 1N4148 1N4148 C1 560pF 50V C2, C5 47 m F 250V C3 4.7 m diode. Symbol Pin Parameter Test Condition Min. Typ. Max. Unit V SUVP 1 VS Turn On Threshold 8.3 9 HIGH VOLTAGE RAIL UP TO 600V n BCD OFF LINE TECHNOLOGY n INTERNAL BOOTSTRAP DIODE STRUCTURE n driven by a DC low im- pedance power source. Note: ESD immunity for pins 6, 7 and 8 is guaranteed up to 900 V (Human Body Model) THERMAL DATA RECOMMENDED OPERATING CONDITIONS PIN CONNECTION Symbol www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/1767.htm |
STMicroelectronics | 20/10/2000 | 17.43 Kb | HTM | 1767.htm |
| 120K 1/2W D1 18V zener D2, D3 BYW100-100 BYW100-100 BYW100-100 BYW100-100 D4,D5,D6,D7 1N4007 D8 1N4148 1N4148 1N4148 1N4148 C1 560pF 50V C2, C5 bootstrap diode. Symbol Pin Parameter Test Condition Min. Typ. Max. Unit V SUVP 1 VS Turn On BOOTSTRAP DIODE STRUCTURE n 15.6V ZENER CLAMP ON V S n DRIVER CURRENT CAPABILITY: - SINK circuit should not be driven by a DC low im- pedance power source. Note: ESD immunity for pins 6, 7 PIN CONNECTION Symbol Parameter Value Unit I S (*) Supply Current 25 mA V CF Oscillator www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/1767-v3.htm |
STMicroelectronics | 21/06/2000 | 16.5 Kb | HTM | 1767-v3.htm |
| :170 T, AWG34 AWG34 AWG34 AWG34 ( j 0.20 mm) N2: 15 T, 3xAWG34 N3: 19 T, AWG34 AWG34 AWG34 AWG34 7 4 8 5 6 L6561 L6561 L6561 L6561 4x1N battery discharge when this is connected and the charger is off. The diode connected between pin 4 and applic ations. There are basically three different configurations that an L6561-based flyback converter and dynamic) overvoltage protection (OVP); w on-chip RC filter on current sense pin for improved : pin ZCD, if grounded, turns off the L6561 L6561 L6561 L6561 and reduces its consumption at a co uple of mA; this can www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/5957-v3.htm |
STMicroelectronics | 25/05/2000 | 29.08 Kb | HTM | 5957-v3.htm |
| 0.20 mm) N2: 15 T, 3xAWG34 N3: 19 T, AWG34 AWG34 AWG34 AWG34 7 4 1 8 5 3 6 L6561 L6561 L6561 L6561 2 4x1N4007 15 m F 400V 10 33 m F 1 configuration the ZCD pin is used instead as a synchronisa tion input and is driven by an external signal at a zener diode between the supp ly voltage and L6561 L6561 L6561 L6561's pin 1). TRANSFORMER SPECS: ETD44 ETD44 ETD44 ETD44 core, 3C85 grade or acts as a soft-start circuit. The diode between the capacitor and TL431 TL431 TL431 TL431's control pin decouple the cap battery discharge when this is connected and the charger is off. The diode connected between pin 4 and pin www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/5957-v2.htm |
STMicroelectronics | 14/06/1999 | 27.23 Kb | HTM | 5957-v2.htm |
| .20 mm) N2: 15 T, 3xAWG34 N3: 19 T, AWG34 AWG34 AWG34 AWG34 7 4 8 5 6 L6561 L6561 L6561 L6561 4x1N4007 10 m F 400V 33 m F different configurations that an L6561-based flyback converter ca n assume, each of them with its own ) overvoltage protection (OVP); w on-chip RC filter on current sense pin for improved noise immunity; w minimise losses; w disable function: pin ZCD, if grounded, turns off the L6561 L6561 L6561 L6561 and reduces its -based flyback converter configurations VCC ZCD GD L6561 L6561 L6561 L6561 Vac C BULK OPTO + TL431 TL431 TL431 TL431 Vout DISABLE www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/5957.htm |
STMicroelectronics | 20/10/2000 | 30.22 Kb | HTM | 5957.htm |
| 0.20 mm) N2: 15 T, 3xAWG34 N3: 19 T, AWG34 AWG34 AWG34 AWG34 7 4 1 8 5 3 6 L6561 L6561 L6561 L6561 2 4x1N4007 15 m F 400V 10 33 m F 1 configuration the ZCD pin is used instead as a synchronisa tion input and is driven by an external signal at a zener diode between the supp ly voltage and L6561 L6561 L6561 L6561's pin 1). TRANSFORMER SPECS: ETD44 ETD44 ETD44 ETD44 core, 3C85 grade or acts as a soft-start circuit. The diode between the capacitor and TL431 TL431 TL431 TL431's control pin decouple the cap battery discharge when this is connected and the charger is off. The diode connected between pin 4 and pin www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/5957-v1.htm |
STMicroelectronics | 02/04/1999 | 27.27 Kb | HTM | 5957-v1.htm |
| 270 VAC 4 x 1N4007 120m F 385V BY218-600 BY218-600 BY218-600 BY218-600 PLR811 PLR811 PLR811 PLR811 BY218-100 BY218-100 BY218-100 BY218-100 BY218-100 BY218-100 BY218-100 BY218-100 470m F 25V 1000m F signal secondary ground 170 VAC 270 VAC 4 x 1N4007 BY218-600 BY218-600 BY218-600 BY218-600 PLR811 PLR811 PLR811 PLR811 BY218-100 BY218-100 BY218-100 BY218-100 BY218-100 BY218-100 BY218-100 BY218-100 470 Slave Mode (Figure 1) In this configuration the master circuit located on the secondary side - Secondary Regulation (Figures 5 and 6) In this configuration the TEA2260/61 TEA2260/61 TEA2260/61 TEA2260/61 provides the regulation through an optocoupler to ensure good accuracy. The advantage of this configuration is the avaibility www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/1614.htm |
STMicroelectronics | 20/10/2000 | 55.18 Kb | HTM | 1614.htm |
| Secondary ground (isolated from mains) Small signal secondary ground 170 VAC 270 VAC 4 x 1N4007 120m F 385V secondary ground 170 VAC 270 VAC 4 x 1N4007 BY218-600 BY218-600 BY218-600 BY218-600 PLR811 PLR811 PLR811 PLR811 BY218-100 BY218-100 BY218-100 BY218-100 BY218-100 BY218-100 BY218-100 BY218-100 470m F 25V 1000m F 25V 1000 secondary ground 170 VAC 270 VAC 4 x 1N4007 BY218-600 BY218-600 BY218-600 BY218-600 PLR811 PLR811 PLR811 PLR811 BY218-100 BY218-100 BY218-100 BY218-100 BY218-100 BY218-100 BY218-100 BY218-100 470m F 25V BA157 BA157 BA157 BA157 2.7nF 1k (Figure 1) In this configuration the master circuit located on the secondary side, generates PWM pulses - Secondary Regulation (Figures 5 and 6) In this configuration the TEA2260/61 TEA2260/61 TEA2260/61 TEA2260/61 provides the regulation through www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/1614-v1.htm |
STMicroelectronics | 02/04/1999 | 49.57 Kb | HTM | 1614-v1.htm |
| Secondary ground (isolated from mains) Small signal secondary ground 170 VAC 270 VAC 4 x 1N4007 120m F 385V secondary ground 170 VAC 270 VAC 4 x 1N4007 BY218-600 BY218-600 BY218-600 BY218-600 PLR811 PLR811 PLR811 PLR811 BY218-100 BY218-100 BY218-100 BY218-100 BY218-100 BY218-100 BY218-100 BY218-100 470m F 25V 1000m F 25V 1000 secondary ground 170 VAC 270 VAC 4 x 1N4007 BY218-600 BY218-600 BY218-600 BY218-600 PLR811 PLR811 PLR811 PLR811 BY218-100 BY218-100 BY218-100 BY218-100 BY218-100 BY218-100 BY218-100 BY218-100 470m F 25V BA157 BA157 BA157 BA157 2.7nF 1k (Figure 1) In this configuration the master circuit located on the secondary side, generates PWM pulses - Secondary Regulation (Figures 5 and 6) In this configuration the TEA2260/61 TEA2260/61 TEA2260/61 TEA2260/61 provides the regulation through www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/1614-v2.htm |
STMicroelectronics | 14/06/1999 | 49.53 Kb | HTM | 1614-v2.htm |