500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Top Results

Part Manufacturer Description Datasheet BUY
OPT101P-JG4 Texas Instruments Monolithic Photodiode and Single-Supply Transimpedance Amplifier 8-SOP 0 to 70 visit Texas Instruments
OPT301M Texas Instruments Integrated Photodiode and Amplifier In Hermetically Sealed Package 8-TO -55 to 125 visit Texas Instruments
OPT101P-J Texas Instruments Monolithic Photodiode and Single-Supply Transimpedance Amplifier 8-SOP 0 to 70 visit Texas Instruments Buy
OPT101P Texas Instruments Monolithic Photodiode and Single-Supply Transimpedance Amplifier 8-PDIP 0 to 70 visit Texas Instruments Buy
OPT101PG4 Texas Instruments Monolithic Photodiode and Single-Supply Transimpedance Amplifier 8-PDIP 0 to 70 visit Texas Instruments

photodiode VTS

Catalog Datasheet MFG & Type PDF Document Tags

photodiode VTS

Abstract: VTS Process Photodiode VTS_ _80H, 82H, 85H PACKAGE DIMENSIONS inch (mm) PRODUCT , VTS_85 L .800 (20.32) .400 (10.16) .200 (5.08) .800 (20.32) .400 (0.16) .200 (5.08) .6072 .144 2 (932) .0322 (212) Series 20, 31 -40°C to 105°C VTS_82 W -40°C to 125°C VTS_80 Series 30 Reverse Voltage: 6.0 Volts ACTIVE AREA (3922) RoHS Compliant ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTS curves, page 67) SYMBOL CHARACTERISTIC
PerkinElmer Optoelectronics
Original
Abstract: VTS Process Photodiode VTS_ _80H, 82H, 85H PACKAGE DIMENSIONS inch (mm) PRODUCT , VTS_85 L .800 (20.32) .400 (10.16) .200 (5.08) .800 (20.32) .400 (0.16) .200 (5.08) .6072 .144 2 (932) .0322 (212) Series 20, 31 -40°C to 105°C VTS_82 W -40°C to 125°C VTS_80 Series 30 Reverse Voltage: 6.0 Volts ACTIVE AREA (3922) RoHS Compliant ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTS curves, page 67) SYMBOL Excelitas Technologies
Original

Silicon Photocells

Abstract: VTS7070A VTS-3 PROCESS SUPER BLUE ENHANCED LARGE AREA PHOTODIODE FEATURES â'¢ Enhanced UV to IR , Temperatur«, °C ASSOLUTE SPECTRAL RESPONSE loo 400 600 800 1000 1200 WaveUngtfi - nm ^EBcB VACTEC VTS , max typ. typ. UNMOUNTED CELLS'1 W VTS-70 44A 203 20.3 392 0,800 0800 0607 7.8 26 240 275 1.25 5,0 005 3,4 VTS-71 44C 203 10.2 187 0.800 0.400 0290 3,7 12 115 130 1.0 40 0.06 16 VTS-72 44A 10.2 10.2 93 Q.400 0400 0.144 1.9 6,0 55 63 0.5 20 0,12 0.83 VTS-73 44C 20.3 5,1 85 0800
-
OCR Scan

Silicon Photocells

Abstract: vts-14 VTS1 PROCESS SOLAR PROCESS LARGE AREA PHOTODIODE FEATURES â'¢ Visible to IR spectral range , Wovelength - nm VTS-1 PROCESS CS 9° ELECTRO-OPTICAL CHARACTERISTICS Cacas-c] PAKT NO. (see Note 7 lo , typ. IVP. max lyp. typ. UNMOUNTED INDIVIDUAL CELLSf'O) VTS-11 44 B 2 21 S.t 85 0 087 0200 0013 â'" 1.8 0041 0055 0.1 1 2.2 23 VTS -12 44 B 2 54 51 10 0100 0.200 0016 â'" 2,1 0.050 0.070 0,2 2 1,1 2.7 VTS-13 44A 5.1 51 21 0200 0.200 0 032 â'" 4 5 010 014 0,5 5 044 5.5 VTS-14 44 C
-
OCR Scan

VTS4085

Abstract: VTS-84 VTS-2 PROCESS LOW CAPACITANCE LARGE AREA PHOTODIODE FEATURES â'¢ Visible to IR spectral , . UNMOUNTED CELLS!"» VTS-80 44A 203 20.3 392 0.800 0800 0607 â'" 210 2.50 325 0.2 1,0 03 5.0 VTS-81 44C 20,3 10,2 187 0.800 0.400 0290 â'" 100 1,20 1.60 0.1 0,5 0,6 2.3 VTS-82 44A 10.2 10.2 93 0.400 0.400 0.144 â'" 50 0.60 0.74 0.05 0,2 1.2 1.0 VTS-83 44C 20,3 5.1 85 0.800 0.200 0.132 â'" 46 0,55 0.69 0.05 02 12 1,0 VTS-84 44C 10 2 5,1 42 0.400 0.200 0.065 â'" 23 027 0.35 0.04 0,1 1.5 0.60
-
OCR Scan

VTS7070A

Abstract: uv photodiode SbE D 303DtiDc1 â¡â¡â¡1111 IVCT VTS-3 Process Photodiodes E 6 & G VACTEC VTS7070A T-90-01 PACKAGE DIMENSIONS inch (mm) .»20 (20.831 450 (11.43) PRODUCT DESCRIPTION Large area planar silicon photodiode in a two lead, "flat1 window hermetic package. Cathode is common to the case. This device has excellent response in the UV region and is designed for high output down to 220 nm. CASE 16 1.25" HERMETIC , 75°C Operating Temperature: -20°C to 60°C ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTS
-
OCR Scan
uv photodiode uv led 365
Abstract: 5bE D â  3030^0^ â¡â¡â¡1111 83^ « V C T VTS7070A VTS-3 Process Photodiodes E G & 6 VACTEC T - 9 0 -0 1 PACKAGE DIMENSIONS inch (m ) m CASE 16 PRODUCT DESCRIPTION 1.25-HERMETIC PACKAGE CHIP ACTIVE AREA: .431 in2 (278 mm2) Large area planar silicon photodiode in a two lead, 'Hat1 window hermetic 1 package. Cathode is common to the case. This device has excellent response , CHARACTERISTICS @ 25°C SYMBOL CHARACTERISTIC TEST CONDITIONS (See also VTS-3 curves, page 95 -
OCR Scan

VTS7080A

Abstract: SbE ]> â  3030bCH 00011DS S3S «VCT |^VTS-2 Process Photodiodes E G 8, G VACTEC VTS7080A T-41-51 PACKAGE DIMENSIONS inch (mm) .820 (20.831 .450 (11.43) PRODUCT DESCRIPTION Large area silicon photodiode mounted in a two lead 1.25" diameter hermetic package. Cathode is common to the case. While designed to be used in the photovoltaic mode, these devices may be used with a small reverse bias. Low , to 60°C ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTS-2 curves, page 87) SYMBOL
-
OCR Scan

all type transistor equivalent

Abstract: circuit diagram for photointerrupter Introduction Detecting devices Photodiode When light is incident on a silicon PN junction, the , photodiode has a sensitivity for all electromagnetic radiation with a wavelength less than 1100 nm. I Introduction As shown in Figure 9, the structure of the photodiode can be classified as a PN type or a PIN type , Cathode PIN type Photodiode envelope structure The photodiodes are available in three types of , structure of the molded type, the type currently manufactured by Rohm, and the photodiode equivalent circuit
-
OCR Scan
all type transistor equivalent circuit diagram for photointerrupter pin details of photo transistor block diagram phototransistor HV IR block photodiode Infrared Phototransistor

TCD102D

Abstract: ccd Linear Image Sensor 2048 sensitive an photodiode Clock : 2-phase On-ship circuitry : Sample-and-held circuitry Dynamic Range , hold pulse voltage Vsp Power supply voltage Vop Input cate voltage Vtg Input source voltage Vts
-
Original
TCD102D ccd Linear Image Sensor 2048 sunstar image sensor sample hold 204S SPEED SENSING ELEMENT
Abstract: . PDP Photodiode polarity Photodiode polarity bit: 1 = photodiode cathode connected to VCC 0 = photodiode anode connected to GND PDR Photodiode current range Photodiode current range bit: With coupling ratio CR between VCSEL bias current and photodiode current = 30 1 = 12 µAâ'"640 µA with 2.5 µA , VCSEL bias current and the photodiode current. CR = IBIAS-VCSEL/IPD. Two photodiode current ranges can be selected by means of the PDR register (bit 5 of register 0). The photodiode range should be Texas Instruments
Original
ONET1191V SLLS750A OC-192/SDH STM-64 300-P
Abstract: Photodiode polarity Photodiode polarity bit: 1 = photodiode cathode connected to VCC 0 = photodiode anode connected to GND PDR Photodiode current range Photodiode current range bit: With coupling ratio CR between VCSEL bias current and photodiode current = 30 1 = 12 µAâ'"640 µA with 2.5 µA , VCSEL bias current and the photodiode current. CR = IBIAS-VCSEL/IPD. Two photodiode current ranges can be selected by means of the PDR register (bit 5 of register 0). The photodiode range should be Texas Instruments
Original
ISO/TS16949
Abstract: SYMBOL ENA PDP Enable Photodiode polarity REGISTER FUNCTION Enables chip when set to 1. Can be toggled low to reset a fault condition. Photodiode polarity bit: 1 = photodiode cathode connected to VCC 0 = photodiode anode connected to GND Photodiode current range bit: With coupling ratio CR between VCSEL bias current and photodiode current = 30 1 = 12 µA­640 µA with 2.5 µA resolution 0 = 2.5 µA­12 8µA with 0.5µA , 1 Equalizer is turned off and bypassed PDR Photodiode current range OLE Open loop enable Texas Instruments
Original
Abstract: SYMBOL ENA PDP Enable Photodiode polarity REGISTER FUNCTION Enables chip when set to 1. Can be toggled low to reset a fault condition. Photodiode polarity bit: 1 = photodiode cathode connected to VCC 0 = photodiode anode connected to GND Photodiode current range bit: With coupling ratio CR between VCSEL bias current and photodiode current = 30 1 = 12 µA­640 µA with 2.5 µA resolution 0 = 2.5 µA­12 8µA with 0.5µA , 1 Equalizer is turned off and bypassed PDR Photodiode current range OLE Open loop enable Texas Instruments
Original

15-V

Abstract: BLM15HG102SN1D chip when set to 1. Can be toggled low to reset a fault condition. PDP Photodiode polarity Photodiode polarity bit: 1 = photodiode cathode connected to VCC 0 = photodiode anode connected to GND PDR Photodiode current range Photodiode current range bit: With coupling ratio CR between VCSEL bias current and photodiode current = 30 1 = 12 µA­640 µA with 2.5 µA resolution 0 = 2.5 µA­12 8µA , ] and the coupling ratio (CR) between the VCSEL bias current and the photodiode current. CR =
Texas Instruments
Original
15-V BLM15HG102SN1D MS501 chemical control process block diagram BLM15HG102SN1
Abstract: SYMBOL ENA PDP Enable Photodiode polarity REGISTER FUNCTION Enables chip when set to 1. Can be toggled low to reset a fault condition. Photodiode polarity bit: 1 = photodiode cathode connected to VCC 0 = photodiode anode connected to GND Photodiode current range bit: With coupling ratio CR between VCSEL bias current and photodiode current = 30 1 = 12 µA­640 µA with 2.5 µA resolution 0 = 2.5 µA­12 8µA with 0.5µA , 1 Equalizer is turned off and bypassed PDR Photodiode current range OLE Open loop enable Texas Instruments
Original

apc ups 640

Abstract: BLM15HG102SN1D ENA Enables chip when set to 1. Can be toggled low to reset a fault condition. PDP Photodiode polarity Photodiode polarity bit: 1 = photodiode cathode connected to VCC 0 = photodiode anode connected to GND PDR Photodiode current range Photodiode current range bit: With coupling ratio CR between VCSEL bias current and photodiode current = 30 1 = 12 µA­640 µA with 2.5 µA resolution 0 = 2.5 , ] and the coupling ratio (CR) between the VCSEL bias current and the photodiode current. CR =
Texas Instruments
Original
apc ups 640 s0212 SFP fiber optic pinout STM-64 SFP resistor 284 modc7 SLLS750

BLM15HG102sn1d

Abstract: Photodiode reverse bias voltage Photodiode fault current level, percent of target IPD (1) VTS Temperature , Functionality SYMBOL ENA PDP Enable Photodiode polarity REGISTER FUNCTION Enables chip when set to 1. Can be toggled low to reset a fault condition. Photodiode polarity bit: 1 = photodiode cathode connected to VCC 0 = photodiode anode connected to GND Photodiode current range bit: With coupling ratio CR between VCSEL bias current and photodiode current = 30 1 = 12 µA­640 µA with 2.5 µA resolution 0 = 2.5 µA­12 8µA
Texas Instruments
Original

BLM15HG102SN1D

Abstract: s0212 chip when set to 1. Can be toggled low to reset a fault condition. PDP Photodiode polarity Photodiode polarity bit: 1 = photodiode cathode connected to VCC 0 = photodiode anode connected to GND PDR Photodiode current range Photodiode current range bit: With coupling ratio CR between VCSEL bias current and photodiode current = 30 1 = 12 µA­640 µA with 2.5 µA resolution 0 = 2.5 µA­12 8µA , ] and the coupling ratio (CR) between the VCSEL bias current and the photodiode current. CR =
Texas Instruments
Original
P0031-04
Abstract: SYMBOL ENA PDP Enable Photodiode polarity REGISTER FUNCTION Enables chip when set to 1. Can be toggled low to reset a fault condition. Photodiode polarity bit: 1 = photodiode cathode connected to VCC 0 = photodiode anode connected to GND Photodiode current range bit: With coupling ratio CR between VCSEL bias current and photodiode current = 30 1 = 12 µA­640 µA with 2.5 µA resolution 0 = 2.5 µA­12 8µA with 0.5µA , 1 Equalizer is turned off and bypassed PDR Photodiode current range OLE Open loop enable Texas Instruments
Original
Showing first 20 results.