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ISL9220IRTZ-T7A Intersil Corporation Switching Charger for 1-Cell and 2-Cell Li-ion Batteries; TQFN20; Temp Range: -40° to 85°C visit Intersil Buy
ISL9220AIRTZ-T Intersil Corporation Switching Charger for 1-Cell and 2-Cell Li-ion Batteries; TQFN20; Temp Range: -40° to 85°C visit Intersil Buy
ISL9220IRTZ-T Intersil Corporation Switching Charger for 1-Cell and 2-Cell Li-ion Batteries; TQFN20; Temp Range: -40° to 85°C visit Intersil Buy
ISL9220AIRTZ-T7A Intersil Corporation Switching Charger for 1-Cell and 2-Cell Li-ion Batteries; TQFN20; Temp Range: -40° to 85°C visit Intersil Buy
ISL94201IRZ Intersil Corporation Multi-Cell Li-ion Battery Pack Analog Front-End; QFN24; Temp Range: -40° to 85°C visit Intersil Buy
ISL78610ANZ-T Intersil Corporation Multi-Cell Li-Ion Battery Manager; TQFP64; Temp Range: -40° to 105°C visit Intersil

photoconductive cell cdse

Catalog Datasheet MFG & Type PDF Document Tags

-12C49

Abstract: dual Cds cell on SILICON mm )RS SENSORS E i PHOTOCONDUCTIVE CELLS , 2© 12H (5) SILICON SENSORS PHOTOCONDUCTIVE CELLS (CdS â'¢ CdSe) MATERIAL: CdS , period. SILICON SENSORS PHOTOCONDUCTIVE CELLS (CdS â'¢ CdSe) MATERIAL: CdS + CdSe , Resistance Hermetically sealed Plastic-coated Resin-coated chip cell Plastic case y Linearity j
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NSL-4960

Abstract: photoconductive cell cdse of photoconductive cells provide up to six resistance ranges in either CdS, CdSe or CdS/CdSe material , SILONEX INC 53E [) â  ÃSS5271 ODOOST? 7 â  SILONEX i TO-8 PHOTOCONDUCTIVE CELLS ) T^l-^l FEATURES â'¢ Three Photoconductive Materials â'¢ Power Dissipation @ 25° C: 500 mW - Hermetically , -2940 NSL-2970 Sensitive Material Type 2 CdS/CdSe Peak @ 620 nm NSL-3920 4K 65 10M 2M NSL-3930 NSL-3940 NSL-3950 NSL-3960 Type 3 CdSe Peak @690 nm 1.7K 40 10M 2M 750 30 10M 2M 40K 650
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NSL-2930 NSL-2940 NSL-4950 NSL-4960 photoconductive cell cdse silonex NSL NSL-395 cdse Photoconductive Cell NSL-2900 NSL-3970 NSL-4920 NSL-4930

photoconductive cell cdse

Abstract: NSL-4960 of photoconductive cells provide up to five standard resistance ranges in CdS or CdSe materials. Two , -8 PHOTOCONDUCTIVE CELLS f _T T-V/-V/ FEATURES â'¢ Five Photoconductive Materials â'¢ Power Dissipation @ 25Â , 67 K 170 HSL-6920 Type 6 690 S10 50 300 K 170 NSL-6930 CdSe 1.02K 100 680 K 170 NSL , -8 PHOTOCONDUCTIVE CELLS PLASTIC ENCAPSULATED SILONEX SENSITIVE PEAK SPECTRAL RESISTANCE RESISTANCE TYPICAL NIN , 6K 500 400 K 250 HSl-5942 9K 700 600 K 250 NSL-6922 Type 6 690 510 50 300 K 170 NSL-6952 CdSe
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003M2 NSL-4910 NSL-4940 NSL-4970 NSL-4980 MSL-5910 cds cell photoconductive cells J 6920 A J 6920 6920 2SS271 HSL-4930 HSL-4950

K720

Abstract: photoconductive cell cdse Prelim inary Data Sheet SILONEX É TO-8 PHOTOCONDUCTIVE CELLS FEATURES · F i v e Photoconductive Materials · Power Dissipation @ 25°C 500 mW - Hermetically Sealed 250 mW - Plastic Encapsulated · , 100 150 800 350 Type 6 CdSe Type 7 CdS Type 9 CdS 690 615 550 1.5 Meg 7.3 Meg SILONEX , Sheet 15010 Rev. 5 SILONEX PLASTIC ENCAPSULATED n TO-8 PHOTOCONDUCTIVE CELLS SILONEX PART , Type 5 CdS Type 6 CdSe Type 9 CdS 550 1.5K 6K 9K 510 2.7K UK 150 500 700 50 200 350 690 550
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K720 Silonex MSI-4930 NSL-5940 NSL-6920 NSL-69 NSL-6940 NSL-7910

FTC 960

Abstract: cdse Silonex CdS/CdSe Photocells, Analog Optocouplers Visit Silonex's Website at www.silonex.com CdS/CdSe Photoconductive Cells For all your light sensing applications, Silonex photoconductive cells are , CdS 1.50 K 100.0 K 170 V 2.24 699-1020 NSL-6910 TO-8 690 CdSe 250.00 67.0 K 170 V 2.39 699-2022 NSL , 120 V 2.14 699-6025 NSL-5540 TO-5 550 CdS 30.00 K 20.0 Meg 120 V 1.84 699-0190 NSL-6510 TO-5 690 CdSe , NSL-5160 TO-18 550 CdS 100.00 K 67.0 Meg 100 V 2.14 699-1060 NSL-6110 TO-18 690 CdSe 2.00 K 1.3 Meg
Allied Electronics Catalog
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NSL-32SR2 FTC 960 Silonex NSL- 32SR2 nsl-19m51 MEG 10.000 Silonex NORPS 12 NSL-19M52 NSL-5910 NSL-4510 NSL-4530 NSL-7530 NSL-5110 NSL-5150

5912

Abstract: TO-8 Photocells Ceramic Package Features · Four photoconductive materials · Tolerance: ±40% @1 ftc, ±33% @ 2 ftc Description The Silonex TO-8 series of photoconductive cells provide up to eight standard resistance ranges in CdS or CdSe materials. Most of these devices are also available in a hermetic , cell (Fig 1.) X = 3 plastic case with glass window (Fig 2.) 12.5 - 13.0 7.3 - 7.7 Optional , -5932 CdS 6.0 500 400 250 NSL-5942 9.0 700 600 250 NSL-6922 Type 6 0.510 50 300 170 690 NSL-6952 CdSe 2.7
Silonex
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5912 NSL-491X NSL-4912 NSL-4922 NSL-4932 NSL-4942 NSL-4952

power LED 650nm

Abstract: NSL-4960 0 0 5 n 1 e] T r LU N tX TO-8 PHOTOCONDUCTIVE CELLS FEATURES · Th ree P h o to co n d u ctiv e , -2970 NSL-3920 NSL-3930 Type 2 CdS/CdSe Peak @ 650nm 1.7K 750 7.5K 4K 1.7K 100 100 75 100 100 100 , . Sensitive Material « n I NSL-2900, 3900, 4900 SERIES TO-8 PHOTOCONDUCTIVE C E L LS Rise Time , -4930 NSL-4940 NSL-4950 NSL-4960 NSL-4970 Type 2 CdS/CdSe 75 75 75 7 6 5 7 6 5 25 20 36.4 15.5 20 18 Type 3 CdSe T yp e 4 CdS i 1 1 P h o t o c e l l re s is ta n c e u n d e r g iv e n illu m in a
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power LED 650nm 25S271

photoconductive cell cdse

Abstract: NSL-4932 TO-8 Photocells Plastic Encapsulated Features · Four photoconductive materials · Tolerance: ±40% @1 ftc, ±33% @ 2 ftc Description The Silonex TO-8 series of photoconductive cells provide up to eight standard resistance ranges in CdS or CdSe materials. Most of these devices are also available in , . Example: Part number NSL-491X X = 1 plastic case without glass window (Fig 2.) X = 2 regular open cell , -6952 CdSe 2.7 200 720 170 NSL-9912 Type 9 550 11 350 3600 170 CdS Specifications subject to
Silonex
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NSL-4962 NSL-4972 NSL-4982 NSL-5912 NSL-5922 photoconductive cells characteristic 4932 ftc 260 NSL-5932

CL702L

Abstract: CL707L % â'¢ 8 Photoconductive Materials â'¢ Temperature Range: - 50° C to + 75° C '±XX* 3ÌÌ005 .240 , Voltage CL702L Type 2 CdS 5150 20K 1.3 Meg 100 V 10V CL703 Type 3 CdSe 7350 133K 880 Meg 300V 50V , Type 4 CdSe 6900 30 K 20 Meg 300V 20V CL704L 0.6K 400K 100 V 4V *CL704U2 1.5K 1 Meg 100 V 10V , "Dual Element Cell matched to ^ 20% MEASUREMENT DATA â'¢ All measurements at 2854°K â'¢ Cells light
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CL700 CL703A CL703L CL704 CL707L CL709L L33K cl702 CL703L/2 CL705

CL702L

Abstract: CL709L % â'¢ 8 Photoconductive Materials â'¢ Temperature Range: - 50° C to + 75° C '±XX* 3ÌÌ005 .240 , Voltage CL702L Type 2 CdS 5150 20K 1.3 Meg 100 V 10V CL703 Type 3 CdSe 7350 133K 880 Meg 300V 50V , Type 4 CdSe 6900 30 K 20 Meg 300V 20V CL704L 0.6K 400K 100 V 4V *CL704U2 1.5K 1 Meg 100 V 10V , "Dual Element Cell matched to ^ 20% MEASUREMENT DATA â'¢ All measurements at 2854°K â'¢ Cells light
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CL705HL_2 220k100 CL705L CL705L/2 CL705HL CL705HL/2 CL707 CL707H

cl703 clairex

Abstract: CL702L Photoconductive Materials â'¢ Temperature Range: - 50° C to + 75° C Peak Spectral Resistance Maximum , CdSe 7350 133K 880 Meg 300V 50V CL703A 67 K 440 Meg 300V 50V CL703L 2.7K 18 Meg 100 V 10V â'¢CL703L/2 6.5K 43 Meg 100 V 10V CL704 Type 4 CdSe 6900 30K 20 Meg 300V 20 V CL704L 0.6K 400K 100 V , 9 CdS 5500 28 K 18.7 Meg 100V 10V "Dual Element Cell matched to £20% MEASUREMENT DATA â'¢ All
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cl703 clairex CLAIREX CL702L Clairex Electronics CL702L CL707HL
Abstract: Resistance Tolerance at 2ft-c: ± 33-1/3% 8 Photoconductive Materials Temperature Range: - 50° C to + 75 , M eg 300V 50V C L703A Type 3 67K 440 M eg 300V 50V CL703L CdSe 2.7K , Type 4 CdSe â'¢C L 7 0 4 U 2 C L705 CL705L 5500 Type 5 CdS â'¢C L 7 0 5 L /2 CL705H L , pe 7H CL707H L CL709L CdS T ype 9 C dS "Dual Element Cell matched to 20 -
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L704L L707L L707H

CdSe LDR

Abstract: NSL 32 LDR 20 TEST & MEASUREMENT Photo IC, Photodiode, Photoconductive Cells and Analog Optocouplers 10 and 20 mm Panel Mount Light Sensors RoHS V Vcc Vcc LDR Current Amp A/D OUT RL To ADC R INTERCONNECT , of an LED input optically coupled to a photoresistive cell in an axial package. Digital to analog , after removal of LED current. Power rating applies at 25°C linearly derated to 75°C. CdS/CdSe Photoconductive Cells PASSIVE & ACTIVE For all your light sensing applications, Silonex photoconductive cells are
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NSL-32 NORPS-12 NSL-5532 CdSe LDR NSL 32 LDR ldr 30K NSL21UV LDR Cds NSL-37V81 NSL-33SR7/2 NSL-45S50 SLD-55S50 2850K

-12C49

Abstract: photoconductive cell cdse 13E D | niSSSD QQDQ321 T | V/- VV TECHNICAL DATA SHEET CdS CdSe PHOTOCONDUCTIVE CELLS Designation of Type Number â  CST ~ JL JL ' 2 0 IOKUI -IMBKi.O logLioâ'" 1kI-. 1 EXAMPLE Type Size , xrnRitivity Vi*ihlr rrs|nm*r GSP CdS 5!)0 lliftli Maltilily, IIikIi i»iivrr CST CdS, CdSe 600 11 iprli ^ r n * i 1 i 11 ly, High *|ifrtl CS13 CdSe 680 lliflli siii'm!, NrflT liifm t«il r-\|ntiri , Fig 8 ON OFF JUL Duly ON : ltec OFF : I »ec tttM CdS Cell o 3« Time â  lOLux 100Lux
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25C38 CS13 CST 15 S 1829-B

VTL9A10

Abstract: Vactec photocell 10150 NE O N TYPES VTL9B6 VTL9B7 Designers a n d manufacturers o f CdS, CdSe photoconductive , cell p o w e r 2 0 0 m W â'" derate 4 m W /'C above 25*C â'" case. Is o la tio n v o lta g e , ) V T L 9 / 2 Series B ottom V ie w Cell Volts (max] i> C A S E -A L U M IN U M P IN S -.0 4 , ) Ascent time is Ihe time for the cell conductince lo rise lo 6 3 ft of the linaf vilue measured from the application of nted lim p input Response time is measured Irom Ihe light adapted slate with a cell test
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VTL9A10 Vactec photocell VTL9A11 QQQD701

VTL9A10

Abstract: VTL9A9 VTL9A2 VTL9A4 VTL9A5 VTL9B6 VTL9B7 Designers and manufacturers of CdS, CdSe photoconductive cellsâ'" Se , cell power 200 mW - derate 4 mW/'C above 2S*C â'" case, Isolation voltage 500V Thermal resistance , combine incandescent or neon lamps in a low cost aluminum case. Both singlQ and dual cell units are , mA Oark Adapted (tvp) light Adapted {m») (min) Ascent (typ) Decay to 100K {max) Cell Volts (max , measured alter 24 hours or more wilh rated input voltage. Off resistance is measured with uted cell voltige
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VTL9A9 vactrol Vactec cds cell VTL9B8 Vactec vectrol

Ir5 tube

Abstract: NSL-9510 0 500 40 0 540 100 0 0 100 0 200 Cds/CdSe PHOTOCONDUCTIVE CELLS · OPTICALLY COUPLED ISOLATORS · , SILONEX: CdS & CdCe PH OTOCELLS Cell Sp«c&al Typical Typ« RwpOflM 2.0 Oc. No. Peak nm Res. KO NSl , 220 Description 1000 1000 1 * Cell in Hermetically sealed 1000 1000 package. Plastic Encapsulated , 125 IN FR AR ED EMITTING DIODES Cell Type No. SLED-Ò61L SLED 561F SLED-562L SLED-562F XpK (nm) 940 , Available SILICON NPN PLANAR EPITAXIAL PHOTOTRANSISTORS Cell Type No. SLT-50L1 SLT-5012 SLT-50L3 SLT
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NSL-9510 Ir5 tube planar photodiodes Silonex nsl21 6112 tube NSL-4450 NSL-4460 NSL-44 NSL-5920 NSL-9910 NSL-3510

VTL9A10

Abstract: Vactec cds cell combine incandescent or neon lamps in a low cost aluminum case. Both singlg and dual cell units are , mA Oark Adapted (tvp) light Adapted {m») (min) Ascent (typ) Decay to 100K {max) Cell Volts (max , wilh rated input voltage. Off resistance is maasured with rated cell voltage At reduced cell voltage, the value is many limes that specified, t4) Ascent time is the lime for the cell conductance lo rise , Irom lha light adapted stale with a cell test voltage ot 1 3SV Initial ionization time is not in â
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50C24 VTL9B6 VT6005 the t.amp 1500 Cds photocell VT VT101

photoresistor LDR 03

Abstract: Photoresistor TOKEN PGM CDS Photoresistors CDS Light-Dependent Photoresistors Light-Dependent Photoresistors for Sensor Applications Preview The cadmium sulfide (CdS) or light dependent resistor (LDR) whose resistance is inversly dependent on the amount of light falling on it, is known by many names including the photo resistor, photoresistor, photoconductor, photoconductive cell, or simply the photocell , at 10 lux and 100 lux. The tolerance of is ±0.1. Spectral peak : CdS 100 80 CdSe
Token Electronics
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photoresistor LDR 03 Photoresistor photo resistor LDR 07 photoresistor LDR photoresistor ldr 07 photoresistor LDR 1000 PGM20 PGM2000 PGM2001 PGM2002 PGM2003 PGM2004

photoresistor LDR 03

Abstract: photoresistor LDR 1000 TOKEN PGM CDS Photoresistors CDS Light-Dependent Photoresistors Light-Dependent Photoresistors for Sensor Applications Preview The cadmium sulfide (CdS) or light dependent resistor (LDR) whose resistance is inversly dependent on the amount of light falling on it, is known by many names including the photo resistor, photoresistor, photoconductor, photoconductive cell, or simply the photocell , CdSe 60 Cd(S.Se) 40 20 0 400 500 600 700 800 Wavelength(nm) 900 1000
Token Electronics
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photoresistor LDR 5mm photoresistor LDR 05 cadmium sulfide photoresistor Photoresistors ldr 12mm PGM2005 PGM2000-PP PGM2001-PP PGM2002-PP PGM2003-PP PGM2004-PP
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