TO-92 C945 Plastic-Encapsulate Transistors TRANSISTOR (NPN ) TO-92 1.EMITTER

TO-92 C945 Plastic-Encapsulate Transistors TRANSISTOR (NPN ) TO-92 1.EMITTER FEATURE Excellent hFE linearity Low noise

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 C945 Plastic-Encapsulate Transistors TRANSISTOR (NPN ) TO-92 1.EMITTER FEATURE Excellent hFE linearity Low noise Complementary to A733 2.COLLECTOR 3. BASE MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value 1 2 3 Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 150 mA PC Collector Power Dissipation 400 mW TJ Junction Temperature 125 Tstg Storage Temperature -55-125 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=1mA , IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC=100uA , IB=0 50 V Emitter-base breakdown voltage V(BR)EBO IE=100mA, IC=0 5 V Collector cut-off current ICBO VCB=60V, IE=0 0.1 uA Collector cut-off current ICEO VCE=45V 0.1 uA Emitter cut-off current IEBO VEB=5V , IC=0 0.1 uA hFE(1) VCE=6 V , IC=1mA 70 hFE(2) VCE=6 V , IC=0.1mA 40 DC current gain 700 Collector-emitter saturation voltage VCE(sat) IC=100mA, IB=10mA 0.3 V Base-emitter saturation voltage VBE(sat) IC=100mA, IB=10mA 1 V fT Transition frequency Collector output capacitance Cob Noise figure NF VCE=6V,IC=10mA,f =30 MHz 200 VCB=10V,IE=0,f=1MHZ MHz 3.0 10 VCE=6V,IC=0.1mA RG=10k,f=1kMHZ pF dB CLASSIFICATION OF hFE(1) Rank O Y GR BL Range 70-140 120-240 200-400 350-700 Typical Characteristics C945