NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: transistor . 5V supply voltage. A high frequency capacitor (0.1 to 1uF) must be placed close to this pin , MOSFET. This pin provides the drive for the 1.5V regulator's pass transistor. PGND (Pin 24) This is , 14 C805 1uF 18 SS 13 5V NC R821 100R 19 GND 12 C815 330uF C816 , ANPEC Electronics Corp. Rev. A.5 - Jun., 2003 8 C816 330uF C815 330uF 24 R821 100R ... | Original |
12 pages, |
APM7313 apm9410 APW3007 C807 C808 330uF ic 7313 C817 7313 28 pin apm3055 TRANSISTOR c816 transistor apm3055 equivalent C807 330uf transistor c814 R819 APW3007 abstract |
|
|||
| Abstract: and R3 = 47 Transistor Q1 is configured with its base and collector tied together. This acts as a , transistor model used in the simulation is based on the work of Curtice [3]. Although this model closely , transistor at high bias, a better model is needed. The model can be downloaded from Agilent's web-site. , of the PNP transistors is high. Thus by forcing the emitter voltage (VE) of transistor Q1 equal to , Capacitor C8=1.5 pF 0402 Chip Capacitor L1, L2=12 nH TOKO LL1608-FS12N LL1608-FS12N L3=10 nH TOKO ... | Original |
7 pages, |
TRANSISTORS BJT list ATF-58143 LL1005-FH2N2S ATF58143 transistor C633 transistor c815 ATF581433 c815 transistor C5001 transistor equivalent transistor C5001 SC-70 ATF-58143 abstract |
|
|||
| Abstract: as DC biasing, but unlike a depletion mode transistor, this enhancement mode device only requires , gate in order for this transistor to turn on. This application note walks through the RF and DC , therefore Ids and Vds are also kept stable. Transistor Q1 is configured with its base and collector tied , C4, C5=0.1 uF 0603 Chip Capacitor C6=1 uF 0805 Chip Capacitor C8=15 pF 0402 Chip , RFout C2 R7 Thus by forcing the emitter voltage (VE) of transistor Q1 equal to Vds, this ... | Original |
7 pages, |
RG200D MGA-53543 LL1005-FH4N7S LL1005-FH3N3S BCV62C BCV62B ATF-511P8 R747 ATF-511P8 abstract |
|
|||
| Abstract: stabilised, and therefore Ids and Vds are also kept stable. Transistor Q1 is configured with its base and , transistors is high. Thus by forcing the emitter voltage (VE) of transistor Q1 equal to Vds, this circuit , ) and output third order intercept point (OPI3). The non-linear transistor model used in the simulation , To properly model the exceptionally high linearity of the E-PHEMT transistor at high bias, a better , C7= 33pF 0402 Chip Capacitor C8=1.5 pF 0402 Chip Capacitor L1, L2=12 nH TOKO ... | Original |
6 pages, |
LL1005-FH2N2S fet curtice nonlinear model fet curtice ATF581433 ATF-58143 AN-1222 AV02-0913EN ATF-58143 abstract |
|
|||
| Abstract: , but unlike a depletion mode transistor, this enhancement mode device only requires a single positive , transistor to turn on. This application note walks through the RF and DC design employed in a single FET , Figure 5. Low Pass Circuit. Transistor Q1 is configured with its base and collector tied together. , the PNP transistors is high. Thus by forcing the emitter voltage (VE) of transistor Q1 equal to Vds , C8=15 pF L1=3.3 nH L2=3.9 nH L3=47 nH L4=4.7 nH R1=30.1 R2=402 R3=1.43 R4=51.1 R5=10 R6=1.2 ... | Original |
7 pages, |
transistor c815 RG200D MGA-53543 Medium Power Bipolar Transistors rohm LL1005-FH4N7S LL1005-FH3N3S BCV62C ATF-511P8 ATF-511P8 abstract |
|
|||
| Abstract: side which enables seeing. ยท Indication of transistor. C Q B E Note: The components identified , INDUCTOR 10uH < TRANSISTOR > Q201 Q202 Q218 Q219 8-729-900-63 8-729-900-36 8-729-119-76 8-729-900-36 TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR DTA124ES DTA124ES DTC124ES DTC124ES 2SA1175-HFE 2SA1175-HFE DTC124ES DTC124ES , 1uF 1uF 1000uF 470uF 0.001uF 20% 20% 20% 20% 50V 50V 25V 25V 50V C814 C815 C816 , Description Remark Q760 Q761 Q850 8-729-202-67 FET 2SK246-GR3 2SK246-GR3 8-729-141-30 TRANSISTOR 2SC3623A-LK 2SC3623A-LK ... | Original |
25 pages, |
2SC3623A-LK RM-U150 c330 TRANSISTOR 1SS119 Schematic LED panel display tv T902 transformer prologic II 5.1 circuit diagram M5F78M07L M5F79M07L sony led tv service manual 2SA1175-HFE M5218AP-22 11ES2-NTA2B TA-VE150 TA-VE150 abstract |
|
|||
| Abstract: section is similar to that of a bipolar transistor, and the self-based OTA can be viewed as a quasi-ideal transistor or as a voltage-controlled current source. Application circuits for the OTA look and operate much like transistor circuits-the bipolar transistor, also, is a voltage-controlled current source. Like a transistor, it has three terminals: a high-impedance input (base) optimized for a low input bias current of , inverting mode; 3) The OTA is far more linear than a bipolar transistor; 4) The transconductance can be ... | OCR Scan |
20 pages, |
SHC615AP SHC615 common emitter amplifier transistor c815 CMOS differential amplifier cascode c815 SHC615 abstract |
|
|||
| Abstract: TRANSISTOR D855 D856 FML22SLF610 FML22SLF610 RU4AMLF-M1 DIODE DIODE Q1105 Q1105 Q1106 Q1106 BC847B BC847B BC847B BC847B TRANSISTOR TRANSISTOR D857 D858 MTZJT-775 MTZJT-775.1C MA165TA5 MA165TA5 DIODE DIODE Q1107 Q1107 Q1108 Q1108 BC847B BC847B BC847B BC847B TRANSISTOR TRANSISTOR D859 D861 MA165TA5 MA165TA5 MA165TA5 MA165TA5 DIODE DIODE Q2101 Q2101 Q2102 Q2102 BC857B BC857B BC857B BC857B TRANSISTOR TRANSISTOR D862 D863 MTZJT-7736A MTZJT-7736A MA165TA5 MA165TA5 DIODE DIODE Q2103 Q2103 Q2301 Q2301 BC857B BC857B BC847B BC847B TRANSISTOR TRANSISTOR D865 D866 MA165TA5 MA165TA5 MA165TA5 MA165TA5 DIODE DIODE ... | Original |
35 pages, |
L3003 MTZJT-7736A POWER TRANSISTOR C3102 transistor C458 C2120 transistor ma29ta5 RU3LFA1 D852 transistor TRANSISTOR D2101 ETP35KAN619U TELEVISION EHT TRANSFORMERS d2102 transistor D2102 TX-28/25/21MD4 TX-28/25/21MD4 abstract |
|
|||
| Abstract: PROG MISO PWRCONTROLBUS Block diagram NOTE: EACH DCO TRANSISTOR MAY DISSIPATE IN WORST CASE 600mW , block diagram NOTE: EACH DCO TRANSISTOR MAY DISSIPATE IN WORST CASE 600mW 2 T151 DN3545N8 DN3545N8 2 3 , VCCBUS PWRCONTROLBUS HOST GND Block diagram NOTE: EACH DCO TRANSISTOR MAY DISSIPATE IN WORST CASE , C815 22N/25V 22N/25V C813 470P/25V 470P/25V 1 2 R821 10K/1 10K/1% 1 2 2 1 R839 1K R829 220K R853 ... | Original |
11 pages, |
advantages of 1N4007 NEC c151 R840 BC558B PC-817 optocoupler optocoupler pc 817 LED801 NEC FA 5v 0.047f t201 transformer data c803 c815 transistor transistor c815 TR303 MLX32001 MLX32001 abstract |
|
|||
| Abstract: PROG MISO PWRCONTROLBUS Block diagram NOTE: EACH DCO TRANSISTOR MAY DISSIPATE IN WORST CASE 600mW , block diagram NOTE: EACH DCO TRANSISTOR MAY DISSIPATE IN WORST CASE 600mW 2 T151 DN3545N8 DN3545N8 2 3 , VCCBUS PWRCONTROLBUS HOST GND Block diagram NOTE: EACH DCO TRANSISTOR MAY DISSIPATE IN WORST CASE , C815 22N/25V 22N/25V C813 470P/25V 470P/25V 1 2 R821 10K/1 10K/1% 1 2 2 1 R839 1K R829 220K R853 ... | Original |
12 pages, |
MLX32001EE-SO16WTUBE MLX32001EE-SO16WREEL MLX32001 c815 transistor c815 C807 nec c815 R840 optocoupler pc 817 PC-817 TRANSISTOR c104 r815 smd advantages of 1N4007 TNR*G MLX32001 abstract |
|
|||